Relevant bibliographies by topics / Stealth Laser Dicing Process

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Stealth Laser Dicing Process'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "Stealth Laser Dicing Process"

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Dohnke, Karl Otto, Korbinian Kaspar, and Dirk Lewke. "Comparison of Different Novel Chip Separation Methods for 4H-SiC." Materials Science Forum 821-823 (June 2015): 520–23. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.520.

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Mechanical blade dicing is a state-of-the-art technique for the chip separation of SiC devices. Due to the hardness of SiC this technique suffers from low feed rate and high wear of the diamond coated dicing blade, resulting in the risk of uncontrolled tool breakage during the dicing process. With the upcoming transition to 150 mm diameter of SiC wafers this technique will most probably reach its limit. For dicing SiC wafers of those diameters on a productive scale three alternative dicing technologies are considered in this paper: ablation laser dicing, Stealth Dicing and Thermal Laser Separa
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Furuno, Kenta, Shigeyuki Yamashita, Yoji Wakayama, Naoya Saiki, and Shinya Takyu. "A Novel Dicing tape for WLCSP Using Stealth Dicing Through Dicing tape and Back Side Protection-Film." International Symposium on Microelectronics 2019, no. 1 (2019): 000333–37. http://dx.doi.org/10.4071/2380-4505-2019.1.000333.

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Abstract Market demand of information terminals for Internet of Things (IoT) is increasing. So market situation requires various semiconductor packages. Wafer Level Chip Size Package (WLCSP) is one of the most important technology among them. We selected stealth dicing (SD) as a manufacturing method for WLCSP because the cutting speed is higher than blade dicing and the yield of semiconductor chip is higher than blade dicing. But, SD process still has some technical issues. In some cases, when the laser is irradiated from circuit side (from surface side of Si wafer), the metal pattern in circu
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Gaudiuso, Caterina, Annalisa Volpe, and Antonio Ancona. "One-Step Femtosecond Laser Stealth Dicing of Quartz." Micromachines 11, no. 3 (2020): 327. http://dx.doi.org/10.3390/mi11030327.

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We report on a one-step method for cutting 250-µm-thick quartz plates using highly focused ultrashort laser pulses with a duration of 200 fs and a wavelength of 1030 nm. We show that the repetition rate, the scan speed, the pulse overlap and the pulse energy directly influence the cutting process and quality. Therefore, a suitable choice of these parameters was necessary to get single-pass stealth dicing with neat and flat cut edges. The mechanism behind the stealth dicing process was ascribed to tensile stresses generated by the relaxation of the compressive stresses originated in the laser b
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Zhang, Zhe, Zhidong Wen, Haiyan Shi, et al. "Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer." Micromachines 12, no. 11 (2021): 1331. http://dx.doi.org/10.3390/mi12111331.

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SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating an
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Fan, Zhiqiang, Jiaxin Zhang, Zhuoqun Wang, Chong Shan, Chenguang Huang, and Fusheng Wang. "A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques." Processes 12, no. 12 (2024): 2696. http://dx.doi.org/10.3390/pr12122696.

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Silicon carbide (SiC) stands out for its remarkable hardness, thermal stability, and chemical resistance, making it a critical material in advanced engineering applications, particularly in power electronics, aerospace, and semiconductor industries. However, its inherent brittleness and relatively low fracture toughness pose significant challenges during precision manufacturing processes, particularly during the laser stealth dicing—a pivotal process for wafer separation. This review provides a comprehensive analysis of the fracture toughness of SiC, exploring its dependence on microstructural
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Tamadate, Yuka, Hideki Maruyama, Katsunori Aoki, Takashi Ozawa, and Haruo Sorimachi. "Novel Backside Grinding and Laser Dicing Process for Cu Pillar Generated Low-k Wafer." International Symposium on Microelectronics 2013, no. 1 (2013): 1–4. http://dx.doi.org/10.4071/isom-2013-wp54_shinko_late.

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One of the challenges in using very thin die, which is needed in thin package, is how to dice it cleanly without chipping, delamination of fragile low-k insulation material and contamination of bonding pads. A narrow scribe line is also highly preferable for high wafer area utilization. The authors developed a novel "grooving and stealth laser process" to satisfy all of these criteria. Grooves are formed on test pads in die sawing area by a grooving laser beam, and then a stealth laser beam is focused into the bulk silicon, causing defect regions in the bulk silicon. Dicing tape is expanded so
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van Borkulo, Jeroen, Richard van der Stam, and Guido Knippels. "Multi Beam Full Cut Dicing of Thin Si IC Wafers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 001446–74. http://dx.doi.org/10.4071/2015dpc-wp21.

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The ongoing trend to thinner wafers which are needed for continuous miniaturization, 3D packaging and IC performance, inevitably means that sole blade dicing evolution is coming to an end. Over the last years several technologies to handle the separation process of thin Si wafer dicing have been evaluated (DBG, Stealth, Plasma, etc). Although they are capable for certain applications to meet the process specifications, they achieve this at expense of flexibility, productivity and process costs. ALSI, the inventor of multi beam dicing for semiconductor materials, has developed a technology usin
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Ino, Takuichiro, Yohei Sonobe, Akihide Saimoto, and Tomokazu Hashiguchi. "Analysis of Residual Stress around Semi-Circular Surface Notches due to Excessive Pressure." Key Engineering Materials 754 (September 2017): 123–26. http://dx.doi.org/10.4028/www.scientific.net/kem.754.123.

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Residual stresses due to excessive internal pressure applied to an array of semi-circular surface notches is analyzed by body force method. The treated problem corresponds to a simple model of the Stealth Dicing (SD) which is expected as an alternative splitting technology applicable to brittle materials. In SD, laser beam of specific wave length is focused and scanned inside of the material to produce a SD-process zone which includes an array of microvoids. Each microvoid is thought to be received an excessive internal pressure due to thermal expansion and then material is split along a plane
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Liao, Kai, Wenjun Wang, Xuesong Mei, and Bin Liu. "High quality full ablation cutting and stealth dicing of silica glass using picosecond laser Bessel beam with burst mode." Ceramics International 48, no. 7 (2022): 9805–16. http://dx.doi.org/10.1016/j.ceramint.2021.12.182.

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Song, Qi, Zhe Zhang, Ziye Xu, et al. "Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer." ECS Journal of Solid State Science and Technology 12, no. 3 (2023): 033012. http://dx.doi.org/10.1149/2162-8777/acc135.

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Silicon carbide (SiC), due to its characteristic materials performance, gets more attention in Radio Frequecy (RC) and High-power device fabrication. However, SiC wafer dicing has been a tricky task because of the high hardness and brittleness. The blade dicing suffers from poor efficiency and debris contaminants. Furthermore, the laser ablation dicing and Thermal Laser Separation (TSL) can have thermal damage and irregular crack propagation. In this study, Stealth Dicing (SD) with nanosecond pulse laser method was applied to 4H-SiC wafer. A series of experiments were conducted to analyze the
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Dissertations / Theses on the topic "Stealth Laser Dicing Process"

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Meyer, Rémi. "Contrôle du dépôt d'énergie par laser femtoseconde dans les diélectriques par faisceaux de Bessel : profil spatio-temporel de densité plasma et applications au clivage du verre." Thesis, Bourgogne Franche-Comté, 2020. http://indexation.univ-fcomte.fr/nuxeo/site/esupversions/9cca4761-0970-4b3d-a6e9-01b766feff4d.

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L'utilisation d'impulsions ultrabrèves pour l'usinage laser permet une grande précision du dépôt d'énergie grâce à un fort confinement de l'interaction laser-matière. Les effets non-linéaires liés à ce confinement sont aussi usuellement responsables de distorsions et d'instabilités dans le profil d'intensité lors de la propagation. Les faisceaux de Bessel à hauts angles coniques ont démontré être très performants pour l'usinage des diélectriques grâce à leur robustesse aux effets non-linéaires. En régime femtoseconde, ils permettent alors de générer dans les milieux transparents des nanocanaux
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邱世杰. "Stealth Dicing parameters optimization for Semiconductor Packaging Process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/33332807588126635101.

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Huang, Jian-Siang, and 黃建翔. "An Investigation on Laser Stealth dicing cut on Sapphire Substrates." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/7ejzq2.

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碩士<br>義守大學<br>機械與自動化工程學系<br>103<br>In this research, an advanced picosecond Laser has been applied to machine sapphire substrate, such as sapphire wafer and sapphire glass, to investigate the fundamental theorem as well as industrial application on Laser technique. Parameters used on design of experiment (DOE) are power, pulse repetition rate, speed, defocus and index. The quality of machined surface, such as kerf width, depth, aspect ratio as well as heat effects has been carefully investigated by scanning electron microscope (SEM). Among those DOE parameters power and pulse repetition rat
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Chen, Pei-Ling, and 陳培領. "A Study on the Effect of Process Parameters on Chip Quality for Thin Wafer by Laser Dicing." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/46083251826364220827.

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碩士<br>國立中興大學<br>機械工程學系所<br>99<br>As the density requirement of integrated circuit (IC) and the progress of in semiconductor technology. A short term is using stack die then do the assembly process for 3DIC integrated circuit become the main trend. The 3DIC is using the DAF to stack chip, it will become the complex material, which has topside chipping, backside chipping and film burr such problems. This research study when using the Nd:YAG laser to saw the complex thin wafer, how the process parameter influence the process quality, to build the model about the process quality and process parame
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Ho, Chen-Chi, та 何振吉. "A Study on the Optimal Process Parameters of 75μm wafer cutting in Laser Dicing Machining (Accretech-ML300+) Using Taguchi Method". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/75452140656724349176.

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碩士<br>國立高雄應用科技大學<br>機械與精密工程研究所<br>101<br>The research aims to adjust four controllable factors, including laser focus deepness、laser cutting power、pulse duration and cutting speed. The research applies Taguchi optimization method to obtain the optimization process parameter of four controllable factors for kerf meandering after cutting. The experiment uses ML300 Plus wafer laser dicer by Accretech and this wafer laser dicer used MAHOH laser system of Japan (one of YAG laser system). In addition, the silicon wafer of semiconductor will be used as the experiment material in this research. The ar
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Conference papers on the topic "Stealth Laser Dicing Process"

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Shayeganrad, Gholamreza, Jongki Kim, Timothy Lee, et al. "Stealth dicing of silicon wafer using 1-µm femtosecond laser pulses." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.am3c.3.

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We demonstrate that counterintuitively, silicon wafer stealth dicing can be performed with femtosecond laser pulses at 1030-nm, where linear absorption predominates. A 1.3-NA oil-immersion objective mitigated plasma defocusing and delocalization before the focal point.
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Su, Te-Jen, Chien-Liang Chiu, Chun-Hsien Su, Mau-Yi Tian, Jui-Chuan Cheng, and Shih-Ming Wang. "Application of Fuzzy Theory to Parameter Design in Wafer Stealth Laser Dicing." In 2024 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS). IEEE, 2024. https://doi.org/10.1109/ispacs62486.2024.10868233.

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Lim, Dao Kun, Venkata Rama Satya Pradeep Vempaty, Ankur Harish Shah, Wen How Sim, Harjashan Veer Singh, and Yeow Kheng Lim. "Predictive Numerical Modeling of Stealth Dicing Process for Different Wafer Pre-Thin Thicknesses." In 2024 IEEE 26th Electronics Packaging Technology Conference (EPTC). IEEE, 2024. https://doi.org/10.1109/eptc62800.2024.10909815.

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Cognigni, Flavio, Giulio Lamedica, Domenico Mello, et al. "Integrating Multimodal Microscopy and Artificial Intelligence Solutions for Laser Dicing Process Induced Defect Identification." In ISTFA 2024. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0273.

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Abstract In semiconductor manufacturing, the process of laser dicing can result in a loss of yield due to defects associated to the laser interaction with the sample. These defects can be difficult to identify, especially before a proper tuning of the process. Traditional investigation methods, like infrared (IR) inspection and focused-ion beam scanning electron microscopy (FIB-SEM) analysis, are labor-intensive and lack comprehensive insights. Here, we propose a robust correlative microscopy (CM) workflow integrating IR, X-ray Microscopy (XRM), and FIB-SEM tomography analyses, leveraging arti
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Nara, Yasunaga, and Hiroki Kiyota. "Stealth Dicing technology with SWIR laser realizing high throughput Si wafer dicing." In Laser-based Micro- and Nanoprocessing XII, edited by Udo Klotzbach, Kunihiko Washio, and Rainer Kling. SPIE, 2018. http://dx.doi.org/10.1117/12.2289235.

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Yamashita, Shigeyuki, Naoya Saiki, and Shinya Takyu. "Development of stealth dicing tape for TSV process." In 2016 IEEE CPMT Symposium Japan (ICSJ). IEEE, 2016. http://dx.doi.org/10.1109/icsj.2016.7801301.

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Ohmura, Etsuji, Masayoshi Kumagai, and Hideki Morita. "Innovative laser technology for semiconductor manufacturing – Stealth dicing." In PICALO 2008: 3rd Pacific International Conference on Laser Materials Processing, Micro, Nano and Ultrafast Fabrication. Laser Institute of America, 2008. http://dx.doi.org/10.2351/1.5057103.

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Song, Hyun-Woo, and Jongdeog Kim. "Laser Irradiation System for n-GaAs Stealth Dicing." In Optoelectronic Devices and Integration. OSA, 2018. http://dx.doi.org/10.1364/oedi.2018.ot4a.50.

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Nara, Yasunaga, and Hiroki Kiyota. "Direct observation of internal void-formation in Stealth Dicing." In Laser-based Micro- and Nanoprocessing XII, edited by Udo Klotzbach, Kunihiko Washio, and Rainer Kling. SPIE, 2018. http://dx.doi.org/10.1117/12.2288238.

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Li, Shaowei, Pei Chen, Fei Qin, Senyu Tu, and Kunzhou Wu. "Stealth dicing of SiC using femtosecond laser Bessel beam." In 2023 24th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2023. http://dx.doi.org/10.1109/icept59018.2023.10492365.

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