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Journal articles on the topic 'STM - Scanning Tunneling Microscope'

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Published: 4 June 2021

Last updated: 13 February 2022

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1

Wells, Oliver C., and Mark E. Welland. "Experiments with a scanning tunneling microscope (STM) mounted in a scanning electron microscope (SEM)." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 636–39. http://dx.doi.org/10.1017/s0424820100144620.

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Scanning tunneling microscopes (STM) exist in two versions. In both of these, a pointed metal tip is scanned in close proximity to the specimen surface by means of three piezos. The distance of the tip from the sample is controlled by a feedback system to give a constant tunneling current between the tip and the sample. In the low-end STM, the system has a mechanical stability and a noise level to give a vertical resolution of between 0.1 nm and 1.0 nm. The atomic resolution STM can show individual atoms on the surface of the specimen.A low-end STM has been put into the specimen chamber of a scanning electron microscope (SEM). The first objective was to investigate technological problems such as surface profiling. The second objective was for exploratory studies. This second objective has already been achieved by showing that the STM can be used to study trapping sites in SiO2.

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2

TSUDA, Nobuhiro. "Scanning Tunneling Microscope." Journal of the Society of Mechanical Engineers 91, no. 832 (1988): 209–15. http://dx.doi.org/10.1299/jsmemag.91.832_209.

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3

Kubby, J. A. "“Stm” Scanning Tunneling Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 196–97. http://dx.doi.org/10.1017/s0424820100125889.

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Scanning Tunneling Microscopy is a recently developed technique within the area of Scanned Image Microscopy that is based on tunneling between two conducting electrodes. This method offers, for the first time, the possibility of direct, real space determination of surface atomic and electronic structure in three dimensions on an atomic length scale, including nonperiodic structures.In this technique a sharp metal tip, mounted on a piezoelectric tripod that forms an orthogonal coordinate system, is brought to within a few Angstroms of the sample surface without “touching” the region to be scanned. A tunneling current I, on the order of 0.1 to 1 nA, is established by applying a bias between the tip and sample. The tunneling current is given to first order by;

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4

Elings, Virgil. "Scanning probe microscopy: A new technology takes off." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 3 (1990): 959. http://dx.doi.org/10.1017/s0424820100162363.

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With the expanding use of the scanning tunneling microscope, the technology is developing into other scanning near field microscopes, microscopes whose resolution is determined by the size of the probe, not by some wavelength. The first available “son of STM” will be the atomic force microscope (AFM), a very low force profilometer which has atomic resolution and can profile non-conducting surfaces. The hope is that this microscope may find more applications in biology than the scanning tunneling microscope (STM), which requires a conducting or very thin sample.In the past five years, the STM has progressed from curiosity to everyday lab tool, imaging surfaces with scans from a few nanometers up to 100 microns. When compared to an SEM, the STM has the advantages of higher resolution, lower cost, operation in air or liquid, real three-dimensional output, and small size. The disadvantages are smaller scan size, slower scan speeds, fewer spectroscopic functions and, of course, not as many of the nice features of the more mature electron microscopes. The AFM has similar features to the STM except that the detector and profiling tips are more complicated and more difficult to operate—disadvantages that will decrease with time.

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5

Maaloum, M., D. Chretien, E. Karsenti, and J. K. Horber. "Approaching microtubule structure with the scanning tunneling microscope (STM)." Journal of Cell Science 107, no. 11 (1994): 3127–31. http://dx.doi.org/10.1242/jcs.107.11.3127.

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We demonstrate that the scanning tunneling microscope can be used to obtain information about arrangement of tubulin subunits in the microtubule wall. Long rows of subunits with a periodicity of 3.8 +/- 0.4 nm were clearly visible in the images of microtubules. The separation between the rows of subunits was 4.8 +/- 0.4 nm. Close inspection of two images revealed another periodicity of 7.8 +/- 0.4 nm in the contour levels of the protofilaments. This indicates that alpha and beta tubulin monomers can be resolved. In these areas the monomers were arranged according to a ‘B-type’ lattice. Scanning tunneling microscope images confirm that the lateral contacts between tubulin monomers in adjacent protofilaments are compatible with a three-start, left-handed helix model. This study demonstrates that scanning tunneling microscopy can give direct information on the structure and organization of macromolecular assemblies and can complement the classical methods of electron microscopy and X-ray scattering.

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6

XU, HAI, XIAN NING XIE, M. A. K. ZILANI, WEI CHEN, and ANDREW THYE SHEN WEE. "NANOSCALE CHARACTERIZATION BY SCANNING TUNNELING MICROSCOPY." COSMOS 03, no. 01 (2007): 23–50. http://dx.doi.org/10.1142/s0219607707000256.

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Nanoscale characterization is a key field in nanoscience and technology as it provides fundamental understanding of the properties and functionalities of materials down to the atomic and molecular scale. In this article, we review the development and application of scanning tunneling microscope (STM) techniques in nanoscale characterization. We will discuss the working principle, experimental setup, operational modes, and tip preparation methods of scanning tunneling microscope. Selected examples are provided to illustrate the application of STM in the nanocharacterization of semiconductors. In addition, new developments in STM techniques including spin-polarized STM (SP-STM) and multi-probe STM (MP-STM) are discussed in comparison with conventional non-magnetic and single tip STM methods.

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7

Stemmer, A., A. Engel, R. Häring, R. Reichelt, and U. Aebi. "Scanning tunneling microscopy of biomacromolecules." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 444–45. http://dx.doi.org/10.1017/s0424820100104285.

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Since its invention in the early 1980s the scanning tunneling microscope (STM) has rapidly evolved into a well established tool in solid state physics for surface structure analysis at atomic resolution. Recently a growing interest in the STM for investigating biological matter has been expressed, since surface ‘topographs’ of biomacromolecules can be recorded at ambient pressure or possibly in buffer solutions, thereby eliminating structural alterations induced by specimen dehydration such as required for electron microscopy (EM).As simple as a STM may look, it provides a wealth of information ranging from mere surface topography and local variations in the tunnel-barrier height to local spectroscopy of electronic states and elasticity. On the other hand the physics involved in imaging biological specimens such as protein or DNA, membranes, or fatty acid monolayers, which are generally known to be poor conductors, is not quite understood yet. To cope with insulators the atomic force microscope (AFM), a relative of the STM, provides a means to obtain topographs and elasticity data.

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8

Kim, Seog-Jun, and Darrell H. Reneker. "Scanning Tunneling Microscopy of Carbon Blacks." Rubber Chemistry and Technology 66, no. 4 (1993): 559–66. http://dx.doi.org/10.5254/1.3538328.

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Abstract Three kinds of carbon black, HAF (high abrasion furnace, N330), MT (medium thermal, N990), and graphitized MT were observed with the scanning tunneling microscope (STM), the transmission electron microscope (TEM), and the scanning electron microscope (SEM) All the STM images are formed from measurements of the x, t, and z position of points on the surface of the particle. The STM images of carbon blacks were compared to transmission electron microscope (TEM) photographs. Pitted and stepped bumps were observed on the surface of HAF carbon black. The surface of MT carbon black was more rough and disorganized At the atomic scale, ordered structure was found on the surface of HAF carbon-black particles Graphitized MT carbon-black particles were faceted polyhedra. Some facets were smooth while others had multiple terraces. The surface of graphitized MT carbon black was so well ordered that a lattice of carbon atoms similar to HOPG (highly ordered pyrolytic graphite) was observed on the smooth facets.

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9

Gómez-Rodríguez, J. M., and Baró A.M. "The use of Scanning Tunneling Microscopy in combination with Scanning Electron Microscopy in the fabrication and imaging of microstructures." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 752–53. http://dx.doi.org/10.1017/s0424820100176897.

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In the last few years, Scanning Tunneling Microscopy (STM), has proven to be a powerful and versatile technique to investigate the topographic and electronic structure of metals and semiconductors with an unprecedent vertical (0.01 nm) and lateral (0.2 nm) resolution. In this paper we are interested in the use of STM to study surfaces having microfabricated structures in the nanometer range, particularly those produced by the STM tip itself.In order to study these samples we have used an STM integrated into a commercial Scanning Electron Microscope (SEM). This allows to address two problems which limit the operation of STM: (i) the limited STM scanning range (1-10 μm) which makes difficult the localization of microstructures on the sample; (ii) the undetermined size and shape of the STM probing tip.Our STM/SEM combination has been described in detail earlier. In short, it consists of an STM placed on the sample stage of a commercial SEM allowing the simultaneous operation of both microscopes.

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10

Wilson, R. J., D. D. Chambliss, S. Chiang, and V. M. Hallmark. "Resolution in the scanning tunneling microscope." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 488–89. http://dx.doi.org/10.1017/s042482010008674x.

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Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.

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11

Morita, Seizo, Yasuhiro Sugawara, and Yoshinobu Fukano. "Atomic Force Microscope Combined with Scanning Tunneling Microscope [AFM/STM]." Japanese Journal of Applied Physics 32, Part 1, No. 6B (1993): 2983–88. http://dx.doi.org/10.1143/jjap.32.2983.

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12

Lagoute, Jerome, Tomaso Zambelli, Stephane Martin, and Sebastien Gauthier. "SPATIAL REPARTITION OF CURRENT FLUCTUATIONS IN A SCANNING TUNNELING MICROSCOPE." Image Analysis & Stereology 20, no. 3 (2011): 175. http://dx.doi.org/10.5566/ias.v20.p175-179.

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Scanning Tunneling Microscopy (STM) is a technique where the surface topography of a conducting sample is probed by a scanning metallic tip. The tip-to-surface distance is controlled by monitoring the electronic tunneling current between the two metals. The aim of this work is to extend the temporal range of this instrument by characterising the time fluctuations of this current on different surfaces. The current noise power spectral density is dominated by a characteristic 1/f component, the physical origin of which is not yet clearly identified, despite a number of investigations. A new I-V preamplifier was developed in order to characterise these fluctuations of the tunnelling current and to obtain images of their spatial repartition. It is observed that their intensity is correlated with some topographical features. This information can be used to get insights on the physical phenomena involved that are not accessible by the usual STM set-up, which is limited to low frequencies.

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13

Fisher, K. A., S. Whitfield, R. E. Thomson, K. Yanagimoto, M. Gustafsson, and J. Clarke. "Scanning tunneling microscopy of planar biomembranes." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 14–15. http://dx.doi.org/10.1017/s0424820100152045.

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The scanning tunneling microscope (STM) is capable of imaging conductive surfaces at atomic resolution. When STMs are used to image biological samples, however, STM resolution is limited to nanometer levels whether samples are hydrated, air-dried, or metal-coated. Lateral resolution is poor due to the nature of biological macromolecules (large Image aspect ratios) as well as to STM tip effects (shape, multiple tips, and tip/sample Interactions). If samples are adsorbed to highly-oriented pyrolytic graphite (HOPG) surfaces and scanned in the topographic (constant current) mode, vertical resolution is also uncertain due to contamination-mediated surface deformation artifacts. Nevertheless, because the STM is capable of detecting sub-Ångstrom displacements in z (e.g. to 0.02 Å in UHV), we have examined the feasibility of using the STM to determine the thickness of planar membranes attached to glass and mica surfaces. Planar membrane monolayers also uniquely provide the opportunity to correlate biochemical and TEM information with STM topographic images.

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14

Hamers, Robert J. "Atomic-Scale Imaging with the Scanning Tunneling Microscope." MRS Bulletin 16, no. 3 (1991): 22–26. http://dx.doi.org/10.1557/s0883769400057365.

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Atomic-resolution techniques for surface characterization are often limited in their ability to probe individual atoms or molecules. In the last few years, scanning tunneling microscopy (STM) has emerged as a powerful probe for studying the atomic-scale structure of surfaces. One of the greatest features of STM is that it is applicable to a wide variety of problems, restricted only by the condition that the material to be studied must be a conductor. Although STM has been applied to a wide variety of materials science problems, the greatest concentration of STM work has been in the study of semiconductor surfaces. This results not only because semiconductor surfaces exhibit complicated and interesting reconstructions of the atoms in the outermost surface layers, but also because many important properties of semiconductor surfaces and interfaces are dominated by defects and other surface imperfections with atomic dimensions.

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15

Bilger, R., H. J. Cantow, J. Heinze, and S. Magonov. "Scanning tunneling microscope images of doped polypyrrole on ITO glass." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 16–17. http://dx.doi.org/10.1017/s0424820100152057.

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Scanning tunneling microscopy (STM) becomes an excellent tool for surface structure studies in the case of conductive and semiconductive materials. The STM has advantage of extending the range of SEM and TEM studies to topography measurements in the angstrom scale. This method also does not require special sample preparations and can be used in air. The polymers with electronic conductivity are among compounds to be studied by STM. Recently the STM images of doped polypyrrole were obtained for polymer molecules deposited on graphite. The authors claimed the observation of single polypyrrole chains with helical structure and diameter approximately 1.2 nm. We had tried the electrochemical deposition of conductive polymers on ITO for preparing structured polypyrrole layers on a smooth conductive glass surface. These samples were studied by STM.The STM images of the surface of polypyrrole samples were obtained in air with the Nanoscope II).

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16

Spence, J. C. H., M. Kuwabara, and W. Lo. "A scanning tunneling microscope for use in the philips EM400 electron microscope in the reflection mode." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 446–47. http://dx.doi.org/10.1017/s0424820100104297.

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A scanning tunneling microscope (STM) has been built in the form of a side-entry specimen holder for the Philips EM400T (9mm pole piece gap). The instrument is intended to provide STM and Reflection Electron Microscope (REM) images of the same region, possibly simultaneously (STM operation with tunneling gaps of up to l.5nm is possible while REM resolution is about 0.9nm). The purpose is to study the basic physics of the STM. The great sensitivity of REM diffraction-contrast imaging to strain will be used to determine if strains, or other surface modifications, accompany tunneling on graphite and gold. Figure 1 shows a typical REM image of the GaP[110] surface obtained on the EM400.Figure 2 shows a schematic diagram of the STM while figure 3 shows the completed device, now undergoing trials. A single tube scanner is used5, as in certain stereo record- player cartridges.

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17

XIE, XIAN NING, HONG JING CHUNG, and ANDREW THYE SHEN WEE. "SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION." COSMOS 03, no. 01 (2007): 1–21. http://dx.doi.org/10.1142/s0219607707000207.

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Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

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18

HOSAKA, Sumio, Shigeyuki HOSOKI, Tsuyoshi HASEGAWA, and Keiji TAKATA. "Scanning tunneling microscope(STM) for an advanced device processes." SHINKU 32, no. 7 (1989): 608–15. http://dx.doi.org/10.3131/jvsj.32.608.

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19

NISHIKAWA, OSAMU. "Scanning Tunneling Microscopy(STM). Wishing Dream on Tunneling Microscopy." Nihon Kessho Gakkaishi 35, no. 2 (1993): 71–74. http://dx.doi.org/10.5940/jcrsj.35.71.

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20

Grigg, D. A., T. A. Dow, and P. E. Russell. "Design and application of a scanning tunneling microscope for the observation of large machined surfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 26–27. http://dx.doi.org/10.1017/s0424820100152100.

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The scanning tunneling microscope is an instrument which can be used to image conductive surfaces with angstrom resolution. This makes the STM an ideal instrument for microscopic studies on machined metals and semiconductors. Several papers have been published showing the effectiveness of the scanning tunneling microscope (STM) to image single point diamond turned metal surfaces such as gold and aluminum.A large sample STM has been constructed specifically to handle machined samples as large as 76 mm in diameter (Fig. 1). A tube scanner has been implimented which allows scan lengths of up to 10 μm. The STM has been designed for quick and easy sample/tip exchange.STM studies have been made on single point diamond turned metals and semiconductor materials. Two forms of copper were diamond turned and studied using the large sample STM;

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21

Stoehr, Meike. "ChemInform Abstract: Scanning Tunneling Microscopy (STM)." ChemInform 43, no. 28 (2012): no. http://dx.doi.org/10.1002/chin.201228279.

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22

Naaman, O., R. C. Dynes, and E. Bucher. "Josephson Effect in Pb/I/NbSe2 Scanning Tunneling Microscope Junctions." International Journal of Modern Physics B 17, no. 18n20 (2003): 3569–74. http://dx.doi.org/10.1142/s0217979203021423.

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We have developed a method for the reproducible fabrication of superconducting scanning tunneling microscope (STM) tips. We use these tips to form superconductor/insulator/superconductor tunnel junctions with the STM tip as one of the electrodes. We show that such junctions exhibit fluctuation dominated Josephson effects, and describe how the Josephson product IcRN can be inferred from the junctions' tunneling characteristics in this regime. This is first demonstrated for tunneling into Pb films, and then applied in studies of single crystals of NbSe 2. We find that in NbSe 2, IcRN is lower than expected, which could be attributed to the interplay between superconductivity and the coexisting charge density wave in this material.

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23

SHIGEKAWA, Hidemi, Shoji YOSHIDA, and Osamu TAKEUCHI. "Optical Pump-Probe Scanning Tunneling Microscopy." Hyomen Kagaku 35, no. 12 (2014): 656–61. http://dx.doi.org/10.1380/jsssj.35.656.

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24

Ichinokawa, Takeo. "Scanning Low-Energy Electron Diffraction Microscopy Combined with Scanning Tunnling Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (1990): 302–3. http://dx.doi.org/10.1017/s0424820100180264.

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A ultra-high vacuum scanning electron microscope (UHV-SEM) with a field emission gun (FEG) has been operated in an energy range of from 100 eV to 3 keV. A new technique of scanning low energy electron diffraction (LEED) microscopy has been added to the other techniques: scanning Auger microscopy (SAM), secondary electron microscopy, electron energy loss microscopy and the others available for the UHV-SEM. In addition to scanning LEED microscopy, a scanning tunneling microscope (STM) has been installed in the UHV-SEM-.The combination of STM with SEM covers a wide magnification range from 105 to 107 and is very effective for observation of surface structures with a high resolution of about 1 Å.A UHV-FEG-SEM is equipped in a chamber in which the vacuum is better than 2×10-10 Torr. A movable cylindrical mirror analyzer (CMA), a two dimensional detector of diffracted LEED beams, an ion gun and a deposition source are installed in this chamber. The concept of the scanning LEED microscope is comprised of two steps: (1) the formation of a selected area LEED pattern and (2) the generation of raster images with information contained in the diffraction pattern. In the present experiment, the LEED detector assembly shown in Fig.l has been used; it consists of two hemisherical grids, a two-stage channel-plate amplifier and a position-sensitive detector. The selection of one (or more) diffracted beam is performed electronically by a window using the two-dimensional analogue comparators. The intensity of a particular beam selected by the window modulates the brightness of the scanning image and a dark field image sensitive to the surface structure is formed. The experimental spatial resolutions of 150 Å and 500 Å have been attained at the primary electron energy 1 keV and 250 eV, respectively.

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25

Bracker, CE, and P. K. Hansma. "Scanning tunneling microscopy and atomic force microscopy: New tools for biology." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 778–79. http://dx.doi.org/10.1017/s0424820100155864.

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A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

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26

ICHIKAWA, M., S. MARUNO, S. FUJITA, H. WATANABE, and Y. KUSUMI. "MICROPROBE RHEED/STM COMBINED MICROSCOPY." Surface Review and Letters 04, no. 03 (1997): 535–42. http://dx.doi.org/10.1142/s0218625x97000511.

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We have developed microprobe reflection high energy electron diffraction combined with scanning tunneling microscope and molecular beam epitaxy equipment. This combination makes it possible to study and control surface processes in the magnification range from several hundred micrometers to the atomic scale. An electron biprism is also attached to the incident electron beam path, which produces a new kind of scanning electron microscopy called scanning interference electron microscopy. The two coherently divided electron beams created by the biprism produce electron interference fringes. The electron interference fringes are used to form ultrafine periodic structures by electron-stimulated surface reaction and to characterize electromagnetic properties of the surfaces. The formation of periodic carbon grid lines produced by the interference fringes on a GaAs surface and the study of Ge thin film growth on a partially Ga adsorbed Si (111) surface are described for application examples of the microscopy.

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27

HASEGAWA, YUKIO. "Scanning Tunneling Microscopy(STM). SXM. STM Studies on Interfaces." Nihon Kessho Gakkaishi 35, no. 2 (1993): 168–70. http://dx.doi.org/10.5940/jcrsj.35.168.

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UEHARA, YOICHI. "Scanning Tunneling Microscopy(STM). SXM. Light Emission from STM." Nihon Kessho Gakkaishi 35, no. 2 (1993): 177–79. http://dx.doi.org/10.5940/jcrsj.35.177.

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29

Wiedemeier, Jeremy, Greg Spencer, Mark J. Hagmann, and Marwan S. Mousa. "Simulation and Analysis of Methods for Scanning Tunneling Microscopy Feedback Control." Microscopy and Microanalysis 25, no. 2 (2019): 554–60. http://dx.doi.org/10.1017/s1431927619000278.

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AbstractA scanning tunneling microscope (STM) requires precise control of the tip–sample distance to maintain a constant set-point tunneling current. Typically, the tip–sample distance is controlled through the use of a control algorithm. The control algorithm takes in the measured tunneling current and returns a correction to the tip–sample distance in order to achieve and maintain the set-point value for tunneling current. We have developed an STM simulator to test the accuracy and performance of four control algorithms. The operation and effectiveness of these control algorithms are evaluated.

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30

Zhen-Xia, Wang, Tan Zhong-Yin, Zhu Chuan-Feng, Wang Nai-Xin, and Bai Chun-Li. "Scanning Tunneling Microscope (STM) Studies of Liquid Crystals of CPBOB." Acta Physico-Chimica Sinica 12, no. 10 (1996): 957–60. http://dx.doi.org/10.3866/pku.whxb19961022.

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31

HOSOKI, Shigeyuki, Sumio HOSAKA, Keiji TAKATA, Tsuyoshi HASEGAWA, and Setsuo NOMURA. "Observation of surface defects using a scanning tunneling microscope(STM)." Hyomen Kagaku 10, no. 3 (1989): 156–61. http://dx.doi.org/10.1380/jsssj.10.156.

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32

Yokoi, Naoki, Satoshi Ueda, Susumu Namba, and Mikio Takai. "Change in Scanning Tunneling Microscope (STM) Tip Shape during Nanofabrication." Japanese Journal of Applied Physics 32, Part 2, No.1A/B (1993): L129—L131. http://dx.doi.org/10.1143/jjap.32.l129.

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33

Ushioda, S. "Scanning tunneling microscope (STM) light emission spectroscopy of surface nanostructures." Journal of Electron Spectroscopy and Related Phenomena 109, no. 1-2 (2000): 169–81. http://dx.doi.org/10.1016/s0368-2048(00)00115-8.

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34

Liu, Zhanwei, Huimin Xie, Daining Fang, Haixia Shang, and Fulong Dai. "A novel nano-Moiré method with scanning tunneling microscope (STM)." Journal of Materials Processing Technology 148, no. 1 (2004): 77–82. http://dx.doi.org/10.1016/j.jmatprotec.2004.01.042.

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35

XIAO, BING, and SACHARIA ALBIN. "CARBON NANOTUBE PROBE FOR SCANNING TUNNELING MICROSCOPY." International Journal of Nanoscience 04, no. 04 (2005): 437–41. http://dx.doi.org/10.1142/s0219581x05003279.

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A simple technique was developed to fabricate carbon nanotube (CNT) probes for scanning tunneling microscope (STM). Multi-walled nanotubes were grown on the apex of the electro-chemically etched tungsten ( W ) tip using thermal chemical vapor deposition (CVD) at normal pressure with H 2 and C 2 H 2. Nickel ( Ni ) nanoparticles, which were used as the catalyst for CNT synthesis, were applied to the tip apex by dipping the W tip into the Ni nanopowder suspension in ethanol. The diameters of grown nanotubes were in the range of 20 nm to 100 nm. Their lengths were generally less than 1 μm and controlled by growth time. The technique can be readily applied to mass production of CNT STM probes without the use of any sophisticated and expensive equipments. The performance of the fabricated CNT tips was assessed by producing STM images of atomic-resolution.

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36

OSHIO, T., Y. SAKAI, and S. EHARA. "STM STUDY OF POLYCRYSTALLINE COPPER." Modern Physics Letters B 04, no. 22 (1990): 1411–14. http://dx.doi.org/10.1142/s021798499000177x.

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Grain boundaries and their electric potential were studied in connection with the electric conduction in polycrystalline copper using a scanning tunneling microscope (STM). It was found that the grain boundaries consist mainly of cuprous oxide ( Cu 2 O ) and electric potential barriers are formed at most grain boundaries.

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37

Yao, J. E., and G. Y. Shang. "A Simple Scanning Tunneling Microscope with Very Wide Scanning Range." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (1990): 314–15. http://dx.doi.org/10.1017/s042482010018032x.

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Scanning Tunneling Microscope (STM) has been a powerful tool for study of surfaces in the range of about 1 micrometer. The small field of view is enough for imaging homogeneous surfaces with atomic or near-atomic resolution. If, however, integrated circuits, gratings and other small “man-made” structures have to be observed, a STM with very wide scan range, for example, 10 to 100 micrometers is needed. In most of the STMs currently in use, three-dimensional scanner are fabricated from piezoceramic stacks, tubes and beams. The maximum scanning range is restricted to about a micrometer because of the maximum allowable control voltage and piezo element dimensions. Recently, Takashima Koshi has constructed a x/y scan stage for observation of grating(1). In a similar point of view, We have designed and built a simple scanner (Fig.1), which includes a base B, a mechanical amplifying device (consisting of a spring lever S and a metal tube M), x/y driving elements D, z control piezo tube P and tip T. The relation between the displacement dx(dy) and applied voltage V for the scanner is described by the equation:dx(dy)=KV(2L+l)/2d. Where, K is the voltage sensitivity in nm/v; L and l are the lengths of M and S respectively; d is the distance between the axis of S and that of D. When L=30mm, l =8mm, d=5mm, k=60nm/v, a scan range of 120μm will be obtained.

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Fink, H. W. "Mono-Atomic Tips and Scanning Tunneling Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 762–63. http://dx.doi.org/10.1017/s0424820100145169.

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The power of the Scanning Tunneling Microscope (STM) to resolve the detailed structure of solid surfaces is based on the strong distance dependence of the tunnel current, while the tip is scanned over the surface to be investigated.In the first part of the paper, the basic principles of operation of the STM are to be reviewed, and examples of the information that can be obtained today are presented. From this, it will be evident that knowledge of the atomic arrangement of the tip is important in order to separate tunnel-current changes related to the tip from those owing to the structure of interest, namely, the sample surface.

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Chen, R. T., and M. G. Jamieson. "Advances in microscopy of polymers: A FESEM and STM study." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 1042–43. http://dx.doi.org/10.1017/s0424820100089524.

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Microscopy has played a major role in establishing structure-process-property relationships in the research and development of polymeric materials. With advances in electron microscopy instrumentation (e.g., field emission SEM - FESEM) and the invention of new scanning probe microscopes (e.g., scanning tunneling microscope - STM), resolution of structures or morphologies down to the nanometer scale can be achieved with ease. This paper will focus on the application of FESEM and STM in order to understand the structure of commercial polymeric materials. Characterization of polymers using other microscopy techniques such as TEM, thermal optical microscopy and atomic force microscopy (AFM) will also be discussed.The polymeric materials evaluated in this study include membranes, liquid crystalline polymer (LCP) fibers, multiphase polymer blends and polymer films or coatings. In order to minimize beam damage and maximize contrast for surface detail in beam sensitive polymers, low voltage SEM (LVSEM) was performed on a JEOL 840F field emission SEM.

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WANG, YANG, CAN-LI SONG, LILI WANG, XU-CUN MA, and QI-KUN XUE. "SCANNING TUNNELING MICROSCOPIC STUDY OF THE INTERFACE SUPERCONDUCTIVITY." Surface Review and Letters 25, Supp01 (2018): 1841001. http://dx.doi.org/10.1142/s0218625x18410019.

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It has been 30 years since the Nobel Prize was awarded for scanning tunneling microscope (STM) in the year 1986, and there have been many instrumental developments and experimental achievements based on STM. In consideration of the strong capability and the extreme versatility in imaging, manipulating, and spectroscopy at the atomic level, STM has witnessed remarkable breakthroughs in many disciplines of condensed matter physics. In this paper, we will focus on recent STM studies on the interface superconductivity, which demonstrate a novel platform for exploring two dimensional superconductors and even high temperature superconductors by means of interface engineering.

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SHIGEKAWA, HIDEMI. "Scanning Tunneling Microscopy(STM). Application for Chemistry. Scanning Tunneling Microscopy on Organic Materials." Nihon Kessho Gakkaishi 35, no. 2 (1993): 126–34. http://dx.doi.org/10.5940/jcrsj.35.126.

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Kano, Shinya, Tsukasa Tada, and Yutaka Majima. "Nanoparticle characterization based on STM and STS." Chemical Society Reviews 44, no. 4 (2015): 970–87. http://dx.doi.org/10.1039/c4cs00204k.

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43

Seifert, Tom S., Stepan Kovarik, Dominik M. Juraschek, Nicola A. Spaldin, Pietro Gambardella, and Sebastian Stepanow. "Longitudinal and transverse electron paramagnetic resonance in a scanning tunneling microscope." Science Advances 6, no. 40 (2020): eabc5511. http://dx.doi.org/10.1126/sciadv.abc5511.

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Electron paramagnetic resonance (EPR) spectroscopy is widely used to characterize paramagnetic complexes. Recently, EPR combined with scanning tunneling microscopy (STM) achieved single-spin sensitivity with sub-angstrom spatial resolution. The excitation mechanism of EPR in STM, however, is broadly debated, raising concerns about widespread application of this technique. We present an extensive experimental study and modeling of EPR-STM of Fe and hydrogenated Ti atoms on a MgO surface. Our results support a piezoelectric coupling mechanism, in which the EPR species oscillate adiabatically in the inhomogeneous magnetic field of the STM tip. An analysis based on Bloch equations combined with atomic-multiplet calculations identifies different EPR driving forces. Specifically, transverse magnetic field gradients drive the spin-1/2 hydrogenated Ti, whereas longitudinal magnetic field gradients drive the spin-2 Fe. Also, our results highlight the potential of piezoelectric coupling to induce electric dipole moments, thereby broadening the scope of EPR-STM to nonpolar species and nonlinear excitation schemes.

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SAKURAI, Toshio, and Yukio HASEGAWA. "FI-STM (Field ion-scanning tunneling microscopy)." Hyomen Kagaku 11, no. 3 (1990): 167–72. http://dx.doi.org/10.1380/jsssj.11.167.

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Nishino, Tomoaki, and Yoshio Umezawa. "Chemically Modified Scanning Tunneling Microscopy (STM) Tips." Sensor Letters 3, no. 3 (2005): 231–36. http://dx.doi.org/10.1166/sl.2005.030.

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Aguilar, Miguel, and Manuel Pancorbo. "Noise characterization in scanning tunneling microscopy (STM)." Pattern Recognition Letters 15, no. 10 (1994): 985–92. http://dx.doi.org/10.1016/0167-8655(94)90030-2.

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Kondo, Y., K. Yagi, K. Kobayashi, H. Kobayashi, and Y. Yanaka. "Construction Of UHV-REM-PEEM for Surface Studies." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (1990): 350–51. http://dx.doi.org/10.1017/s0424820100180501.

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Recent development of ultra-high vacuum electron microscopy (UHV-EM) is very rapid. This is due to the fact that it can be applied to variety of surface science fields.There are various types of surface imaging in UHV condition; low energy electron microscopy (LEEM) [1], transmission (TEM) and reflection electron microscopy (REM) [2] using conventional transmission electron microscopes (CTEM) (including scanning TEM and REM)), scanning electron microscopy, photoemission electron microscopy (PEEM) [3] and scanning tunneling microscopy (STM including related techniques such as scanning tunneling spectroscopy (STS), atom force microscopy and magnetic force microscopy)[4]. These methods can be classified roughly into two; in one group image contrast is mainly determined by surface atomic structure and in the other it is determined by surface electronic structure. Information obtained by two groups of surface microscopy is complementary with each other. A combination of the two methods may give images of surface crystallography and surface electronic structure. STM-STS[4] and LEEM-PEEM [3] so far developed are typical examples.In the present work a combination of REM(TEM) and PEEM (Fig. 1) was planned with use of a UHV CTEM. Several new designs were made for the new microscope.

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Fisher, Knute A. "Scanned Probe Microscopy in Biology." Microscopy Today 3, no. 8 (1995): 16–17. http://dx.doi.org/10.1017/s1551929500062921.

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Numerous scanned probe microscopes (SPM) have been developed over the past decade. Most are based on the precise positioning of sample and probe using piezoelectric transducers, and some have the capability of imaging flat surfaces with atomic resolution. The first atomic resolution SPM applied to biological samples was the scanning tunneling microscope (STM). The atomic force microscope (AFM) was subsequently developed and over the past few years has become the instrument of choice for biological applications.

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Gómez, J., L. Vázquez, A. M. Baró, et al. "Scanning tunneling microscopy (STM) and scanning electron microscopy (SEM) of electrodispersed gold electrodes." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 240, no. 1-2 (1988): 77–87. http://dx.doi.org/10.1016/0022-0728(88)80314-0.

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Rogers, C. T., S. Gregory, and E. M. Clausen. "Scanning tunneling microscopy/electro-luminescence of III-V and II-VI semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 24–25. http://dx.doi.org/10.1017/s0424820100152094.

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Scanning tunneling microscopy has proven to be an enormously useful technique for probing the atomic scale electronic structure of clean semiconductor surfaces. In particular, application of STM current-voltage spectroscopy over the last several years has begun to yield detailed information about the energies and spatial locations of electronic bonds at surfaces. Recent work by Kaiser and Bell shows that STM can also be used to elucidate the nature of electronic transport across interfaces buried tens of nanometers beneth the surface. We are attempting to extend the STM current-voltage technique, which has been so successful at addressing near surface electronic properties, to allow the study of the more general class of opto-electronic properties near semiconductor surfaces: We have constructed a novel Scanning Tunneling Microscope/Electro-luminescence apparatus. Our instrument combines a high speed STM with a stationary tunnel tip/collection optics assembly and a standard spectrometer and photodetector. The system allows us to study the spectral composition and intensity of the light generated by various inelastic processes during electron tunneling.

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