Academic literature on the topic 'Stockbarger method'

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Journal articles on the topic "Stockbarger method"

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Jin Kim, Dong, Joon-Ho Oh, Han Soo Kim, et al. "Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications." Materials Science-Poland 34, no. 2 (2016): 297–301. http://dx.doi.org/10.1515/msp-2016-0034.

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AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.
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A., Chandrasekharan K., and Kunjomana A. G. "Growth of Antimony Selenide Crystals by Bridgman-Stockbarger Method." Mapana - Journal of Sciences 8, no. 2 (2009): 1–6. http://dx.doi.org/10.12723/mjs.15.1.

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Single crystals of antimony selenide were grown from melt by the Bridgman Stockbarger method. X-ray powder diffraction analysis was carried out to determine the lattice parameters of the grown samples.The morphology and chemical analysis of cleavage planes were investigated using SEM and EDAX. The microhardness studies were done by using a Vickers hardness tester. The correlation of energy gap and microhardness has also been investigated.
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Hu, Mingyuan, Yan Wang, Zhenyu You, et al. "Influence of codoped Gd3+ ions on the spectroscopic site symmetry of Dy3+ ions in LaF3 single crystals." Journal of Materials Chemistry C 7, no. 43 (2019): 13432–39. http://dx.doi.org/10.1039/c9tc02951f.

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Shi, Minli, and Jiayue Xu. "Large size LaF3:Eu:Ca crystal grown by Bridgman–Stockbarger method." Materials Letters 58, no. 29 (2004): 3823–25. http://dx.doi.org/10.1016/j.matlet.2004.07.037.

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Lee, Woo Gyo, Yong Kyun Kim, Jong Kyung Kim, Nicolai Starzhinskiy, Vladimir Ryzhikov, and Boris Grinyov. "Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method." Journal of Nuclear Science and Technology 45, sup5 (2008): 579–81. http://dx.doi.org/10.1080/00223131.2008.10875921.

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Distanov, V. E., B. G. Nenashev, A. G. Kirdyashkin, and M. G. Serboulenko. "Proustite single-crystal growth by the Bridgman–Stockbarger method using ACRT." Journal of Crystal Growth 235, no. 1-4 (2002): 457–64. http://dx.doi.org/10.1016/s0022-0248(01)01933-9.

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USHASREE, P. M., T. MIDORIKAWA, K. KOMATSU, and T. KAINO. "GROWTH OF 4-(4-DIMETHYLAMINOSTYRYL)-1-METHYLPYRIDINIUM TOSYLATE (DAST) MIXED SINGLE CRYSTAL BY BRIDGMAN–STOCKBARGER METHOD." Journal of Nonlinear Optical Physics & Materials 13, no. 03n04 (2004): 359–66. http://dx.doi.org/10.1142/s0218863504001980.

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4-(4-dimethylaminostyryl)-1-methylpyridinium tosylate (DAST) is a very promising organic nonlinear optical (NLO) material for future optoelectronic and nonlinear optical applications, though it cannot be grown from molten state. Hence, a derivative of DAST was synthesized and mixed with DAST. The melting point of the mixed crystal decreased drastically, making it possible to grow a single crystal from molten state. In the present investigation, a mixed single crystal of DAST has been grown from molten state by vertical Bridgman–Stockbarger method.
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Lamuta, Caterina, Anna Cupolillo, Antonio Politano, et al. "Nanoindentation of single-crystal Bi2Te3topological insulators grown with the Bridgman-Stockbarger method." physica status solidi (b) 253, no. 6 (2016): 1082–86. http://dx.doi.org/10.1002/pssb.201552760.

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Balint, A. M., M. Mihailovici, D. G. Bãltean, and St Balint. "Interface structure in the growth of semiconductor crystals using the Bridgman–Stockbarger method." Thin Solid Films 380, no. 1-2 (2000): 108–10. http://dx.doi.org/10.1016/s0040-6090(00)01480-2.

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Echizen, Y., H. Tanaka, S. Adachi, T. Ishigaki, and S. Kishida. "Bi2Sr2CaCu2Oy single crystal growth in Bridgman–Stockbarger method using different oxygen partial pressure." Physica C: Superconductivity and its Applications 445-448 (October 2006): 455–58. http://dx.doi.org/10.1016/j.physc.2006.04.066.

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Dissertations / Theses on the topic "Stockbarger method"

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Perrin, Daniel. "Élaboration de monocristaux de la solution solide Bi40Te54Se6 par les méthodes Bridgman et "travelling heater method" : influence de la méthode d'élaboration sur les propriétés thermoélectriques." Vandoeuvre-les-Nancy, INPL, 1995. http://www.theses.fr/1995INPL130N.

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Ce travail porte sur la croissance cristalline et la caractérisation de la solution solide Bi40Te54Se6 de type n, dopée au brome ou avec excès de tellure, afin de connaitre les paramètres essentiels qui influent sur les propriétés thermoélectriques. L’étude de lingots cristallisés par la méthode Bridgman-Stockbarger a mis en évidence une inhomogénéité en composition, mais a permis de définir les coefficients de distribution du brome et du tellure en excès. Dans le but d'améliorer l'homogénéité et la qualité cristalline des lingots, nous avons effectué à partir d'un germe, la croissance par la méthode Travelling Heater Method (THM) de monocristaux non dopés. Pour cela, nous avons complété le diagramme de phase ternaire, du coté riche en tellure, en déterminant la courbe d'isoconcentration correspondant à la composition de la solution solide étudiée. Des échantillons T. H. M. Sont amenés à la composition du solidus par des recuits de saturation en tellure entre 565 et 588°C. La ligne solidus est exprimée en terme de concentration de porteurs en fonction de la température de recuit. La caractérisation de ces échantillons, par mesure du coefficient de Seebeck, de la résistivité électrique et de la conductivité thermique nous a permis de déterminer le facteur de mérite maximal: 2,7. 10-3 K-1. Des lingots T. H. M. Homogènes, dopés au brome et de très bonne qualité cristalline ont également été élaborés. Le facteur de mérite est égal à 2,9. 10-3 K-1 pour 10^19 atome de brome par cm3. Cette étude a montré l'intérêt de la méthode T. H. M. Pour effectuer la croissance de solutions solides ternaires dont la composition est bien définie du point de vue thermodynamique
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Joshi, Madhura A. "Growth and Characterization of Magnesium Single Crystal for Biodegradable Implant Material Application." University of Cincinnati / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1448275234.

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Book chapters on the topic "Stockbarger method"

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Sobolev, B. P., Z. I. Zhmurova, V. V. Karelin, E. A. Krivandina, P. P. Fedorov, and T. M. Turkina. "Preparation of Single Crystals of the Nonstoicmometric Fluorite Phases M1-xRxF2+x (M = Ca, Sr, Ba; R = Rare Earth Elements) by the Bridgman-Stockbarger Method." In Growth of Crystals. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3662-8_5.

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Conference papers on the topic "Stockbarger method"

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Gürbulak, Bekir, Mehmet Şata, Afsoun Ashkhasi, Muhammet Yıldırım, and Songül Duman. "Electrical characterization of In/p-GaSe:Cd/Au–Ge single crystal grown by Bridgman/Stockbarger method." In TURKISH PHYSICAL SOCIETY 32ND INTERNATIONAL PHYSICS CONGRESS (TPS32). Author(s), 2017. http://dx.doi.org/10.1063/1.4976476.

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Srinivasan, M., and P. Ramasamy. "Study of the flow properties using simulation modeling for the melt growth by Bridgman-Stockbarger method." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791330.

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Ramachandran, K., A. Raja, Muthu Senthil Pandian, and P. Ramasamy. "Linear and nonlinear optical properties of organic 4-methyl-3-nitrobenzoic acid (4M3N) single crystal grown by bridgman – Stockbarger method." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113237.

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Chen, C. W., D. Y. Lin, H. P. Hsu, Y. F. Wu, K. Strzałkowski, and P. Sitarek. "Optical Sensors of Cd1-xZnxTe Bulk Semiconductors Grown by Vertical Bridgman-Stockbarger method." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-11-15.

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