Relevant bibliographies by topics / Strain and interfaces engenieering

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  2. Dissertations / Theses
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Academic literature on the topic 'Strain and interfaces engenieering'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Strain and interfaces engenieering"

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Dandrea, R. G., and C. B. Duke. "Strain-induced interdiffusion at semiconductor interfaces." Physical Review B 45, no. 24 (June 15, 1992): 14065–68. http://dx.doi.org/10.1103/physrevb.45.14065.

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Rösner, Harald, Christoph T. Koch, and Gerhard Wilde. "Strain mapping along Al–Pb interfaces." Acta Materialia 58, no. 1 (January 2010): 162–72. http://dx.doi.org/10.1016/j.actamat.2009.08.065.

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Johnson, William C. "Superficial stress and strain at coherent interfaces." Acta Materialia 48, no. 2 (January 24, 2000): 433–44. http://dx.doi.org/10.1016/s1359-6454(99)00359-6.

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Nordlund, K., J. Nord, J. Frantz, and J. Keinonen. "Strain-induced Kirkendall mixing at semiconductor interfaces." Computational Materials Science 18, no. 3-4 (September 2000): 283–94. http://dx.doi.org/10.1016/s0927-0256(00)00107-5.

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Brune, Harald, Holger Röder, Corrado Boragno, and Klaus Kern. "Strain relief at hexagonal-close-packed interfaces." Physical Review B 49, no. 4 (January 15, 1994): 2997–3000. http://dx.doi.org/10.1103/physrevb.49.2997.

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Mohammed, Ahmed Sameer Khan, and Huseyin Sehitoglu. "Strain-sensitive topological evolution of twin interfaces." Acta Materialia 208 (April 2021): 116716. http://dx.doi.org/10.1016/j.actamat.2021.116716.

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Stepanyuk, V. S., D. V. Tsivlin, D. Sander, W. Hergert, and J. Kirschner. "Mesoscopic scenario of strain-relief at metal interfaces." Thin Solid Films 428, no. 1-2 (March 2003): 1–5. http://dx.doi.org/10.1016/s0040-6090(02)01180-x.

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Hrkac, Stjepan Bozidar, Christian Thorsten Koops, Madjid Abes, Christina Krywka, Martin Müller, Manfred Burghammer, Michael Sztucki, et al. "Tunable Strain in Magnetoelectric ZnO Microrod Composite Interfaces." ACS Applied Materials & Interfaces 9, no. 30 (July 19, 2017): 25571–77. http://dx.doi.org/10.1021/acsami.6b15598.

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Gilbert, R. B., and R. J. Byrne. "Strain-Softening Behavior of Waste Containment System Interfaces." Geosynthetics International 3, no. 2 (January 1996): 181–203. http://dx.doi.org/10.1680/gein.3.0059.

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Yamaji, Tokiya, Hiroyuki Nakamoto, Hideo Ootaka, Ichiro Hirata, and Futoshi Kobayashi. "Rapid Prototyping Human Interfaces Using Stretchable Strain Sensor." Journal of Sensors 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/9893758.

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In the modern society with a variety of information electronic devices, human interfaces increase their importance in a boundary of a human and a device. In general, the human is required to get used to the device. Even if the device is designed as a universal device or a high-usability device, the device is not suitable for all users. The usability of the device depends on the individual user. Therefore, personalized and customized human interfaces are effective for the user. To create customized interfaces, we propose rapid prototyping human interfaces using stretchable strain sensors. The human interfaces comprise parts formed by a three-dimensional printer and the four strain sensors. The three-dimensional printer easily makes customized human interfaces. The outputs of the interface are calculated based on the sensor’s lengths. Experiments evaluate three human interfaces: a sheet-shaped interface, a sliding lever interface, and a tilting lever interface. We confirm that the three human interfaces obtain input operations with a high accuracy.
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Dissertations / Theses on the topic "Strain and interfaces engenieering"

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Haspot, Victor. "Exploitation d’hétérostructures d’oxydes intégrant La₂⁄₃Sr₁⁄₃MnO₃ pour des applications spin-orbitroniques et magnoniques." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP079.

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Les dispositifs spintroniques classiques utilisent l'interaction d'échange entre les spins des électrons de conduction et les moments magnétiques locaux dans les matériaux magnétiques pour créer des courants polarisés en spin, ou pour manipuler l’aimantation par transfert de spin à partir de courants polarisés en spin. Une nouvelle direction de la spintronique - appelée aussi spin-orbitronique - exploite le couplage spin-orbite dans les matériaux non magnétiques au lieu de l'interaction d'échange dans les matériaux magnétiques dans le but de générer, détecter ou exploiter des courants polarisés en spin. Une autre voie - la magnonique - explore quant à elle le potentiel des ondes de spin pour transporter et traiter des informations dans des nanostructures magnétiques. Pour une large gamme d'applications dans ces deux domaines, des matériaux avec des très faibles valeurs d'amortissement magnétique sont nécessaires. Dans cette thèse, nous avons d'abord exploré le potentiel du matériau demi-métallique La₂⁄₃Sr₁⁄₃MnO₃ (LSMO) pour obtenir de très faible valeur d’amortissement magnétique. Nous avons étudié notamment l'effet de la contrainte et de la température sur les processus de relaxations magnétiques des couches minces LSMO. Par la suite, les films LSMO ont été utilisés comme injecteurs de spin dans des hétérostructures d’oxydes dans une perspective spin-orbitronique. Aussi, nous avons étudié l'opportunité de contrôler l'interconversion spin-charge en ajoutant un matériau ferroélectrique, BiFeO₃ (BFO) en exploitant les effets d'interfaces. Enfin, nous avons exploré le potentiel des bicouches LSMO / BFO dans le but de réaliser des cristaux magnoniques reprogrammables
Classical spintronic devices use the exchange interaction between conduction electron spins and local spins in magnetic materials to create spin-polarized currents, or to manipulate nanomagnets by spin transfer from spin-polarized currents. A novel direction of spintronics –called spin-orbitronics - exploits the spin-orbit coupling in nonmagnetic materials instead of the exchange interaction in magnetic materials to generate, detect or exploit spin-polarized currents. Another one –magnonics- explores the potential of spin waves to carry and process information in magnetic nanostructures. For a broad range of applications in both fields, materials with ultralow magnetic damping values are required. In this thesis we first explored the potential of the half metallic material La₂⁄₃Sr₁⁄₃MnO₃ (LSMO) to obtain very low damping. We studied the effect of strain and temperature on the damping of LSMO thin films. Subsequently, LSMO films were used as spin-current injectors in spin-orbitronic heterostructures. In those we also studied the opportunity to control the spin-charge interconversion by adding a ferroelectric material, BiFeO₃ (BFO) by exploiting the interface effects. Finally, we explored the potential of LSMO/BFO bilayers for reprogrammable magnonic crystals
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Dahlberg, Carl F. O. "Modeling of the mechanical behavior of interfaces by using strain gradient plasticity." Licentiate thesis, Stockholm : Skolan för teknikvetenskap, Kungliga Tekniska högskolan, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-11506.

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Calkins, Thomas B. "Nanocomposite High Displacement Strain Gauges for use in Human-Machine Interfaces: Applications in Hand Pose Determination." BYU ScholarsArchive, 2011. https://scholarsarchive.byu.edu/etd/2627.

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Conductive nanocomposites are finding many uses as multi-functional materials. One recent development involves the creation of high displacement strain gauges, which have potential applications in a variety of engineering roles. The piezoresistive nature of the gauges makes possible their strain sensing capability. The intent of this research is to show that specific High Displacement Strain Gauges can successfully be used in one human-machine interface application that will demonstrate their potential for a range of other human-machine interface applications. This will be shown in the development of these sensors to accomplish hand pose determination. The flexible and inexpensive gauges are attached to several locations on a glove. It is then shown that by linking this glove with software, the position of the hand can be interpreted into the letters of the American Sign Language alphabet. This use of this nanocomposite sensor establishes the potential for future applications. Issues such as accuracy of response, cyclability, recalibration and reliability are discussed. A design of experiments is accomplished in order to evaluate the effects of modification of the gauges in order to overcome these issues. This work develops the potential of these sensors for use in human-machine interface applications such as computer games, remote controls, robotics, prosthetics and virtual reality applications.
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Attia, Thomas. "Interfaces between pavement layers in bituminous mixtures." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSET001.

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Afin que les structures de chaussée présentent une bonne résistance mécanique, les couches qui les composent sont liées entre elles à l’aide de « couches d’accrochage ». Un nouvel appareil, nommé 2T3C (Torsion-Traction‑Compression sur Cylindre Creux), a été conçu dans cette thèse pour caractériser le comportement thermomécanique des interfaces entre couches de chaussées en enrobé bitumineux. La Corrélation d’Images Numériques en trois dimensions (CIN 3D) a notamment été utilisée pour trouver les sauts de déplacement au niveau de l’interface. Le comportement de différentes configurations d’interfaces a été étudié dans le domaine des petites déformations, pour lequel un nouveau modèle a été introduit pour les décrire, et dans le domaine des grandes déformations à l’aide d’essais de rupture monotone en cisaillement
To ensure that road structures present a good mechanical strength, the layers that compose them are bonded together with tack coats. A new device, named 2T3C Hollow Cylinder Apparatus (2T3C HCA), has been designed in this thesis to characterise the thermomechanical behaviour of interfaces between pavement layers in bituminous mixtures. 3D Digital Image Correlation (3D DIC) has been used to find the displacement gaps at the interface. The behaviour of different interface configurations has been studied in the small strain domain, for which a new model was introduced to describe them, and in the large strain domain thanks to monotonic shear failure tests
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Heaton-Adegbile, Philip. "In-vitro assessment of load transfer and strain distribution across the cement-bone and bone-implant interfaces in artificially replaced acetabulum." Thesis, University of Portsmouth, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.424079.

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Abad, Muñoz Libertad. "Efectos Estructurales y de Interfase en Capas Finas de La(2/3)Ca(1/3)MnO(3)." Doctoral thesis, Universitat Autònoma de Barcelona, 2007. http://hdl.handle.net/10803/3403.

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En el desarrollo de esta tesis hemos analizado distintos aspectos preliminares relacionados con la utilización de óxidos complejos, tales como las perovskitas de manganeso, en la implementación de dispositivos con potenciales aplicaciones en magnetoelectrónica. En concreto, hemos abordado a fondo distintos aspectos relacionados con la fabricación de uniones túnel magnéticas basadas en el sistema La2/3Ca1/3MnO3 (LCMO)/SrTiO3 (STO).
Nuestro trabajo ha puesto de manifiesto que la técnica de pulverización catódica de RF es adecuada para el crecimiento de capas epitaxiales de LCMO de alta calidad sobre sustratos monocristalinos diversos (STO, LaAlO3 (LAO)). Las heteroestructuras LCMO/STO y LCMO/LAO han sido objeto de un detallado análisis poniendo de manifiesto que el desacoplo de parámetros de red juega un papel muy importante tanto sobre el tipo de crecimiento de las heteroestructuras como sobre las propiedades físicas. El sistema LCMO/STO (δ=1.2%) crece tensionado en el plano y permite crecer capas de hasta unos 100 nm sin que haya relajación parcial de la tensión estructural. En cambio, el sistema LCMO/LAO (δ=-1.8%) crece comprimido en el plano y muestra señales de relajación parcial de la tensión estructural incluso para espesores en torno a los 10 nm.
El análisis de las propiedades magnéticas y de transporte muestran que ambos sistemas LCMO/STO y LCMO/LAO adolecen de una notable disminución tanto de su temperatura de transición magnética, TC, como de su magnetización de saturación, MS, al disminuir el espesor de las capas, siendo éste más acusado en el caso del LCMO/STO. Tratamientos térmicos al aire a alta temperatura permiten una mejora sustancial de las propiedades magnéticas y de transporte en ambos sistemas. La mejora es mucho más rápida en el sistema LCMO/LAO. Así mismo, el aumento del espesor de las capas también promueve una mejora de las propiedades, que se aproximan a las del material en forma masiva conforme el grosor aumenta. Esta evolución se ha relacionado con la aparición de una capa no magnética en la superficie de las capas de LCMO que se pone de manifiesto, predominantemente para las capas de LCMO/LAO ultra delgadas. Por otro lado, hemos visto como esta capa inerte puede ser reducida hasta un orden de magnitud mediante tratamientos térmicos de las muestras a alta temperatura.
Nuestro trabajo ha puesto de manifiesto que la tensión estructural juega un papel fundamental y que las mejoras de TC y MS con los tratamientos térmicos están fundamentalmente ligadas a una relajación parcial de la tensión estructural. Otras posibilidades, tales como la incorporación de oxigeno o la variación de la microestructura de las muestras han sido descartadas en base a medidas de efecto Hall y análisis de microscopía electrónica de alta resolución.
Para el estudio de las propiedades de transporte en las interfases hemos desarrollado un procedimiento experimental basado en la utilización de un microscopio de fuerzas atómicas trabajando en modo corriente permitiendo la caracterización de barreras aislantes e interfases entre un metal noble y un óxido complejo. Este método permite la caracterización de barreras y superficies soslayando los problemas derivados del desconocimiento preciso del contacto entre la punta de AFM y la superficie de la capa. Se realizaron medidas mediante la definición de nanocontactos de diferente geometría y tamaño realizados por distintas técnicas de nanofabricación. Mediante el estudio de las curvas I(V) en nanocontactos de LCMO/metal noble (Au, Pt) constatamos la existencia de una barrera superficial aislante (túnel) para capas finas vírgenes de LCMO/LAO. Mediante el ajuste de las curvas I(V) utilizando el modelo de Simmons hemos derivado valores para la capa aislante que concuerdan muy bien con otros datos reportados, además esta capa aislante puede ser reducida drásticamente mediante tratamientos térmicos en atmósfera ambiente.
In this Thesis we have analyzed different preliminary aspects related to the use of complex oxides, such as manganes perovskites, for implementation of functional devices with potential application on magnetoelectronics. To be precise, we have faced in deep the different aspects related with the fabrication of magnetic tunnel junctions based on the La2/3Ca1/3MnO3 (LCMO)/SrTiO3 (STO) system.
Our work makes evident the suitability of RF sputtering technique for growing high quality epitaxial layers of LCMO onto several single-crystalline substrates (STO, LaAlO3 (LAO)). The heterostructures LCMO/STO and LCMO/LAO have been object of a detailed analysis showing up that structural misfit plays a significant role both on the heterostructures growth process and on the physical properties. The system LCMO/STO (δ=1.2%) is under in-plane tensile strain but, thin films up to 100 nm thick can be grown without any partial relieve of the structural strain. In contrast, the system LCMO/LAO (δ=-1.8%) grows under in-plane compressive strain and shows clear traces of partial relaxation of structural strain even for thicknesses around 10nm.
The analysis of the magnetic and transport properties indicates that both systems have an outstanding depression on both the temperature transition, TC, and the saturation magnetization, MS, when decreasing the thin film thickness, being this phenomenon more pronounced in the case of LCMO/STO. High temperature annealing processes in air promote a remarkable improvement of the magnetic and transport properties in both systems. This improvement is faster and more evident in the LCMO/LAO system.
In addition, we have verified that the increment of the film thicknesses also promotes an improvement of the physical properties, approaching that of bulk samples. This evolution has been correlated with the existence of a non magnetic layer at the topmost layers of the LCMO thin films, whose effect becomes more relevant as the film thickness decreases and being dominant for ultra-thin films in the LCMO/LAO system. It has been observed that this dead layer can be reduced up to one order of magnitude by high temperature annealing processes.
Our work has demonstrated that structural strain plays a fundamental role on the magnetic and transport properties of these systems and the improvements of TC and MS with annealing processes is strongly linked to a partial relaxation of the structural strain. Other possibilities, such as oxygen uptake or modifications of the microstructure of the samples have been ruled out in base of Hall Effect measurements and high resolution transmission electron microscopy analysis.
To study transport properties at the interfaces we have developed an experimental procedure based on the use of an atomic forces microscope (AFM) working in current sensing mode, permiting the electrical characterization of insulating barriers and the interfaces between the precious metal and the complex oxide. This method allows characterizing transport properties of barriers and interfaces avoiding the problems related to the uncertainty of the exact nature of the contact between the AFM tip an the analyzed surface. Measurements were realized by defining nanocontacts, with different geometries and sizes, using different nanofabrication techinques.
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Li, Quantong. "Strain relaxation in InGaN/GaN herostructures." Thesis, Normandie, 2018. http://www.theses.fr/2018NORMC204/document.

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Dans ce travail, nous avons étudié la relaxation de couches d’hétérostructures InGaN/GaN obtenue par épitaxie en phase vapeur aux organométalliques (EPVOM) et épitaxie aux jets moléculaires (EJM) principalement par microscopie électronique en transmission (MET). Pour ce faire, nous avons fait varier la composition de l'indium de 4.1% au nitrure d'indium pur, ce qui correspond lors de la croissance sur GaN à un décalage paramétrique allant de 1% à 11.3%. Le travail a porté sur des couches dont l’épaisseur allait de 7 nm à 500 nm. A partir d’une composition en indium voisine de 10%, nous mettons en évidence la formation d’un réseau de dislocations vis dont la ligne se promène dans l’interface, avec de très longues sections droites le long des directions <11-20>. Ces dislocations coexistent avec un réseau de dislocations coins qui commence à se former vers 13%, il disparait complétement autour d’une composition en indium de 18%. Le réseau de dislocation vis se densifie de plus en plus au-delà. Outre ces dislocations de décalage paramétrique, d'autres mécanismes qui contribuent à la relaxation de la contrainte dans ces hétérostructures InGaN/GaN ont été mis en évidence. Ainsi, au-dessus d'une composition d'indium supérieure à 25%, de nombreux phénomènes se produisent simultanément. (1) Formation des dislocations de décalage paramétrique à l'hétérointerface; (2) une composition de la couche qui s’enrichit en indium vers la surface; (3) des fortes perturbations de la séquence hexagonale conduisant à un empilement aléatoire; (4) croissance à trois dimensions (3D) pouvant même conduire à des couches poreuses lorsque la composition en indium est comprise entre 40% et 85%. Cependant, on met en évidence qu’il est possible de faire croître de l’InN pur de bonne qualité cristalline s'améliore grâce à la formation systématique d'une couche 3D
In this work, we have investigated the strain relaxation of InGaN layers grown on GaN templates by MOVPE and PAMBE using TEM. To this end we varied the indium composition from 4.1% to pure indium nitride and the corresponding mismatch was changing from less than 1% to 11.3%, the thickness of the InGaN layers was from 7 nm to 500 nm. When the indium composition is around 10%, one would expect mostly elastically strained layers with no misfit dislocations. However, we found that screw dislocations form systematically at the InGaN/GaN interface. Moreover, below 18% indium composition, screw and edge dislocations coexist, whereas starting at 18%, only edge dislocations were observed in these interfaces. Apart from the edge dislocations (misfit dislocations), other mechanisms have been pointed out for the strain relaxation. It is found that above an indium composition beyond 25%, many phenomena take place simultaneously. (1) Formation of the misfit dislocations at the heterointerface; (2) composition pulling with the surface layer being richer in indium in comparison to the interfacial layer; (3) disruption of the growth sequence through the formation of a random stacking sequence; (4) three dimentional (3D) growth which can even lead to porous layers when the indium composition is between 40% and 85%. However, pure InN is grown, the crystalline quality improves through a systematic formation of a 3D layer
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Muehlemann, Anton. "Variational models in martensitic phase transformations with applications to steels." Thesis, University of Oxford, 2016. https://ora.ox.ac.uk/objects/uuid:bb7f4ff4-0911-4dad-bb23-ada904839d73.

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This thesis concerns the mathematical modelling of phase transformations with a special emphasis on martensitic phase transformations and their application to the modelling of steels. In Chapter 1, we develop a framework that determines the optimal transformation strain between any two Bravais lattices and use it to give a rigorous proof of a conjecture by E.C. Bain in 1924 on the optimality of the so-called Bain strain. In Chapter 2, we review the Ball-James model and related concepts. We present some simplification of existing results. In Chapter 3, we pose a conjecture for the explicit form of the quasiconvex hull of the three tetragonal wells, known as the three-well problem. We present a new approach to finding inner and outer bounds. In Chapter 4, we focus on highly compatible, so called self-accommodating, martensitic structures and present new results on their fine properties such as estimates on their minimum complexity and bounds on the relative proportion of each martensitic variant in them. In Chapter 5, we investigate the contrary situation when self-accommodating microstructures do not exist. We determine, whether in this situation, it is still energetically favourable to nucleate martensite within austenite. By constructing different types of inclusions, we find that the optimal shape of an inclusion is flat and thin which is in agreement with experimental observation. In Chapter 6, we introduce a mechanism that identifies transformation strains with orientation relationships. This mechanism allows us to develop a simpler, strain-based approach to phase transformation models in steels. One novelty of this approach is the derivation of an explicit dependence of the orientation relationships on the ratio of tetragonality of the product phase. In Chapter 7, we establish a correspondence between common phenomenological models for steels and the Ball-James model. This correspondence is then used to develop a new theory for the (5 5 7) lath transformation in low-carbon steels. Compared to existing theories, this new approach requires a significantly smaller number of input parameters. Furthermore, it predicts a microstructure morphology which differs from what is conventionally believed.
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Monti, Mark Charles. "The effect of epitaxial strain and R³+ magnetism on the interfaces between polar perovskites and SrTiO₃." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-3231.

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We have embarked on a systematic study of novel charge states at oxide interfaces. We have performed pulsed laser deposition (PLD) growth of epitaxial oxide thin films on single crystal oxide substrates. We studied the effects of epitaxial strain and rare-earth composition of the metal oxide thin films. We have successfully created TiO₂ terminated SrTiO₃ (STO) substrates and have grown epitaxial thin films of LaAlO₃ (LAO), LaGaO₃ (LGO), and RAlO₃ on STO using a KrF pulsed excimer laser. Current work emphasizes the importance of understanding the effect of both epitaxial strain and R³+ magnetism on the interface between RAlO₃ and STO. We have demonstrated that the interfaces between LAO/STO and LGO/STO are metallic with carrier concentrations of 1.1 x 10¹⁴ cm[superscript -2] and 4.5 x 10¹⁴ cm[superscript −2], respectively. Rare-earth aluminate films, RAlO₃, with R = Ce, Pr, Nd, Sm, Eu, Gd, and Tb, were also grown on STO. Conducting interfaces were found for R = Pr, Nd and Gd, and the results indicate that for R [does not equal] La the magnetic nature of the R³+ ion causes increased scattering with decreasing temperature that is modeled by the Kondo effect. Epitaxial strain between the polar RAlO₃ films and STO appears to play a crucial role in the transport properties of the metallic interface, where a decrease in the R³+ ion size causes an increase in sheet resistance and an increase in the onset temperatures for increased scattering.
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Foss, Cameron. "Phonon Transport at Boundaries and Interfaces in Two-Dimensional Materials." 2018. https://scholarworks.umass.edu/masters_theses_2/686.

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A typical electronic or photonic device may consist of several materials each one potentially meeting at an interface or terminating with a free-surface boundary. As modern device dimensions reach deeper into the nanoscale regime, interfaces and boundaries become increasingly influential to both electrical and thermal energy transport. While a large majority of the device community focuses on the former, we focus here on the latter issue of thermal transport which is of great importance in implementing nanoscale devices as well as developing solutions for on-chip heat removal and waste heat scavenging. In this document we will discuss how modern performance enhancing techniques (strain, nanostructuring, alloying, etc.) affect thermal transport at boundaries and across interfaces through the avenue of three case studies. We use first-principles Density Functional Perturbation Theory to obtain the phonon spectrum of the materials of interest and then use the dispersion data as input to a phonon Boltzmann Transport model. First, we investigate the combined effects of strain and boundary scattering on the in-plane and cross-plane thermal conductivity of thin-film silicon and germanium. Second, we review a recently developed model for cross-dimensional (2D-3D) phonon transport and apply it to 3D-2D-3D stacked interfaces involving graphene and molybdenum disulfide 2D-layers. Third, we combine relevant models from earlier Chapters to study extrinsic effects, such as line edge roughness and substrate effects, on in-plane and through-plane thermal transport in 1H-phase transition metal dichalcogenide (TMD) alloys. Through these investigations we show that: (1) biaxial strain in Si and Ge thin-films can modulate cross-plane conductivity due to strong boundary scattering, (2) the thermal boundary conductance between 2D-3D materials can be enhanced in the presence of an encapsulating layer, and (3) the thermal conductivity of 1H-phase TMDs can be reduced by an order of magnitude through the combination of nanostructuring, alloying, and substrate effects.
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Books on the topic "Strain and interfaces engenieering"

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Failure analysis of 2-D and 3-D woven composites: Final report, NASA grant NAG-1-1324, September 1, 1991-December 31, 1994. [Washington, DC: National Aeronautics and Space Administration, 1994.

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United States. National Aeronautics and Space Administration., ed. Failure analysis of 2-D and 3-D woven composites: Final report, NASA grant NAG-1-1324, September 1, 1991-December 31, 1994. [Washington, DC: National Aeronautics and Space Administration, 1994.

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United States. National Aeronautics and Space Administration., ed. Failure analysis of 2-D and 3-D woven composites: Final report, NASA grant NAG-1-1324, September 1, 1991-December 31, 1994. [Washington, DC: National Aeronautics and Space Administration, 1994.

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Tiwari, Sandip. Semiconductor Physics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.001.0001.

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A graduate-level text, Semiconductor physics: Principles, theory and nanoscale covers the central topics of the field, together with advanced topics related to the nanoscale and to quantum confinement, and integrates the understanding of important attributes that go beyond the conventional solid-state and statistical expositions. Topics include the behavior of electrons, phonons and photons; the energy and entropic foundations; bandstructures and their calculation; the behavior at surfaces and interfaces, including those of heterostructures and their heterojunctions; deep and shallow point perturbations; scattering and transport, including mesoscale behavior, using the evolution and dynamics of classical and quantum ensembles from a probabilistic viewpoint; energy transformations; light-matter interactions; the role of causality; the connections between the quantum and the macroscale that lead to linear responses and Onsager relationships; fluctuations and their connections to dissipation, noise and other attributes; stress and strain effects in semiconductors; properties of high permittivity dielectrics; and remote interaction processes. The final chapter discusses the special consequences of the principles to the variety of properties (consequences of selection rules, for example) under quantum-confined conditions and in monolayer semiconductor systems. The text also bring together short appendices discussing transform theorems integral to this study, the nature of random processes, oscillator strength, A and B coefficients and other topics important for understanding semiconductor behavior. The text brings the study of semiconductor physics to the same level as that of the advanced texts of solid state by focusing exclusively on the equilibrium and off-equilibrium behaviors important in semiconductors.
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Book chapters on the topic "Strain and interfaces engenieering"

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Lookman, Turab, Marcel Porta, and Avadh Saxena. "Strain Heterogeneity and Ferroelastic Interfaces in Materials." In ICOMAT, 376–81. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118803592.ch55.

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Prakash, Chandra, Devendra Verma, Matthias Exner, Emre Gunduz, and Vikas Tomar. "Strain Rate Dependent Failure of Interfaces Examined via Nanoimpact Experiments." In Challenges in Mechanics of Time Dependent Materials, Volume 2, 93–102. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41543-7_12.

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Viceconti, M., A. Toni, A. Sudanese, D. Dallari, and A. Giunti. "Local Strain Deviation (L.S.D.) and Bone Remodeling: A Comparative Study on Cementless Total Hip Arthroplasty." In Interfaces in Medicine and Mechanics—2, 345–51. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3852-9_36.

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Skerry, T. M. "Skeletal strain and the maintenance of bone mass." In Proceedings of the First International Conference on Interfaces in Medicine and Mechanics, 167–72. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-011-7477-0_17.

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Backhaus-Ricoult, Monika, and Stéphane Laurent. "Role of Interfacial and Strain Energy for the Formation of Native Metal-Oxide Interfaces." In Interfacial Science in Ceramic Joining, 169–81. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-017-1917-9_15.

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Abeyaratne, Rohan, and James K. Knowles. "On the Driving Traction Acting on a Surface of Strain Discontinuity in a Continuum." In Fundamental Contributions to the Continuum Theory of Evolving Phase Interfaces in Solids, 265–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-59938-5_10.

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HENDERSON, T. M., J. C. GREER, G. BERSUKER, A. KORKIN, and R. J. BARTLETT. "EFFECT OF CHEMICAL ENVIRONMENT AND STRAIN ON OXYGEN VACANCY FORMATION ENERGIES AT SILICONSILICON OXIDE INTERFACES." In Defects in High-k Gate Dielectric Stacks, 373–83. Dordrecht: Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4367-8_30.

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Koops, C. T., S. B. Hrkac, M. Abes, P. Jordt, J. Stettner, A. Petraru, H. Kohlstedt, et al. "Elastic Coupling at Epitaxial Multiferroic Interfaces: In Situ X-Ray Studies of Electric Field Induced Strain." In IFMBE Proceedings, 187–91. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_38.

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Balokhonov, Ruslan R., and Varvara A. Romanova. "Microstructure-Based Computational Analysis of Deformation and Fracture in Composite and Coated Materials Across Multiple Spatial Scales." In Springer Tracts in Mechanical Engineering, 377–419. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-60124-9_17.

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AbstractA multiscale analysis is performed to investigate deformation and fracture in the aluminum-alumina composite and steel with a boride coating as an example. Model microstructure of the composite materials with irregular geometry of the matrix-particle and substrate-coating interfaces correspondent to the experimentally observed microstructure is taken into account explicitly as initial conditions of the boundary value problem that allows introducing multiple spatial scales. The problem in a plane strain formulation is solved numerically by the finite-difference method. Physically-based constitutive models are developed to describe isotropic strain hardening, strain rate and temperature effects, Luders band propagation and jerky flow, and fracture. Local regions experiencing bulk tension are found to occur during compression that control cracking of composites. Interrelated plastic strain localization in the steel substrate and aluminum matrix and crack origination and growth in the ceramic coating and particles are shown to depend on the strain rate, particle size and arrangement, as well as on the loading direction: tension or compression.
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Lyamina, Elena, and Sergei Alexandrov. "Application of the Strain Rate Intensity Factor to Modeling Material Behavior in the Vicinity of Frictional Interfaces." In Trends in Computational Contact Mechanics, 291–320. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22167-5_16.

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Conference papers on the topic "Strain and interfaces engenieering"

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Kuklja, M. M., Sergey N. Rashkeev, Mark Elert, Michael D. Furnish, William W. Anderson, William G. Proud, and William T. Butler. "AUTOCATALYTIC DECOMPOSITION AT SHEAR-STRAIN INTERFACES." In SHOCK COMPRESSION OF CONDENSED MATTER 2009: Proceedings of the American Physical Society Topical Group on Shock Compression of Condensed Matter. AIP, 2009. http://dx.doi.org/10.1063/1.3295145.

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Choules, Brian, Monty Moshier, and Ronald Hinrichsen. "High Strain Rate Failure of Composite Interfaces." In 46th AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics and Materials Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2005. http://dx.doi.org/10.2514/6.2005-2358.

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Schaefer, A., and M. F. X. Wagner. "Strain mapping at propagating interfaces in pseudoelastic NiTi." In ESOMAT 2009 - 8th European Symposium on Martensitic Transformations. Les Ulis, France: EDP Sciences, 2009. http://dx.doi.org/10.1051/esomat/200906031.

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Malakooti, Mohammad H., Zhi Zhou, John H. Spears, Timothy J. Shankwitz, and Henry A. Sodano. "Strain analysis of nanowire interfaces in multiscale composites." In SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, edited by Nakhiah C. Goulbourne. SPIE, 2016. http://dx.doi.org/10.1117/12.2222051.

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De Rossi, Danilo, Federico Lorussi, Alberto Mazzoldi, Walter Rocchia, and Enzo Pasquale Scilingo. "Strain-amplified electroactive polymer actuator for haptic interfaces." In SPIE's 8th Annual International Symposium on Smart Structures and Materials, edited by Yoseph Bar-Cohen. SPIE, 2001. http://dx.doi.org/10.1117/12.432685.

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Ratchford, Daniel C., Vanessa M. Breslin, Elizabeth S. Ryland, Junghoon Yeom, Robert B. Balow, Blake S. Simpkins, Paul A. Brown, Jeffrey C. Owrutsky, and Adam D. Dunkelberger. "Impact of strain on 2D perovskite carrier dynamics." In Physical Chemistry of Semiconductor Materials and Interfaces XX, edited by Daniel Congreve, Christian Nielsen, Andrew J. Musser, and Derya Baran. SPIE, 2021. http://dx.doi.org/10.1117/12.2594271.

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Ishioka, Kunie, Avinash Rustagi, Andreas Beyer, Kerstin Volz, Wolfgang Stolz, Ulrich Hoefer, Hrvoje Petek, and Christopher Stanton. "Ultrashort Strain Pulses Generated at Buried GaP/Si Interfaces." In International Conference on Ultrafast Phenomena. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/up.2016.uw4a.4.

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Huang, Kunpeng, Md Tahmidul Islam Molla, Kat Roberts, Pin-Sung Ku, Aditi Galada, and Cindy Hsin-Liu Kao. "Delocalizing Strain in Interconnected Joints of On-Skin Interfaces." In UbiComp '21: The 2021 ACM International Joint Conference on Pervasive and Ubiquitous Computing. New York, NY, USA: ACM, 2021. http://dx.doi.org/10.1145/3460421.3478812.

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Amano, Sho, Makoto Iida, Takeshi Naemura, and Hiroyuki Ota. "Tech-note: Strain-based User Interface Using a Wooden Balance Beam." In 2008 IEEE Symposium on 3D User Interfaces. IEEE, 2008. http://dx.doi.org/10.1109/3dui.2008.4476589.

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Dadoenkova, N. N., I. L. Lyubehanskii, M. I. Lyubehanskii, Th Rasing, and Sung-Chul Shin. "Misfit strain induced reflection of light from magnetic-nonmagnetic interfaces." In IEEE International Magnetics Conference. IEEE, 1999. http://dx.doi.org/10.1109/intmag.1999.837957.

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Reports on the topic "Strain and interfaces engenieering"

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Sodano, Henry A. STIR: Tailored Interfaces for High Strength Composites Across Strain Rates. Fort Belvoir, VA: Defense Technical Information Center, September 2013. http://dx.doi.org/10.21236/ada602036.

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Duscher, G., S. J. Pennycook, H. J. Gao, N. D. Browning, and R. Singh. Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), March 1998. http://dx.doi.org/10.2172/672106.

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