Relevant bibliographies by topics / Substrate bias

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Substrate bias'

Author: Grafiati
Published: 4 June 2021
Last updated: 30 May 2022

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Journal articles on the topic "Substrate bias"

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Pang, Xiaolu, Huisheng Yang, Shijian Shi, Kewei Gao, Yanbin Wang, and Alex A. Volinsky. "Microstructure and mechanical properties of Ti/AlTiN/Ti-diamondlike carbon composite coatings on steel." Journal of Materials Research 25, no. 11 (2010): 2159–65. http://dx.doi.org/10.1557/jmr.2010.0281.

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Ti/AlTiN/Ti-diamondlike carbon (DLC) composite coatings were deposited by mid-frequency magnetron sputtering and Hall ion source-assisted deposition on high-speed steel W18Cr4V substrates. The coating microstructure and mechanical properties, including hardness, elastic modulus, coefficient of friction, and wear properties were investigated by scanning electron microscopy, Raman spectroscopy, scratch and ball-on-disk friction tests, respectively. Fairly smooth composite coating with strong interfacial adhesion and good mechanical properties was produced. The substrate bias increases sp3 bonds
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WU, XIANCHENG, BO WANG, GUANGHUA CHEN, and HULIN LI. "INFLUENCES OF PREPARATION CONDITIONS ON CNx THIN FILM STRUCTURE AND CHARACTERISTICS." International Journal of Modern Physics B 16, no. 06n07 (2002): 1105–9. http://dx.doi.org/10.1142/s0217979202010944.

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Carbon nitride (CNx) thin films have been synthesized by hot filament assisted r.f. plasma-enhanced chemical vapor deposition with negative bias methods on Si (100) substrates. The influences on the thin film structure and hardness characteristics of r.f. power and substrate negative bias have been emphatically investigated. The optimal preparation parameters have been summarized as follows: r.f. power of 200W, substrate negative bias of -200V, substrate temperature of about 600°C, total reactive gas pressure of about 110Pa, flow ratio of CH4 to N2 of 1 : 5.5.
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Gui, X., Y. Y. Su, S. Y. Li, et al. "Tribological Properties of Hydrogenated Amorphous Carbon (a-C:H) Films on Aluminium Alloy Substrate under Different Substrate Bias Voltages." Materials Science Forum 687 (June 2011): 784–90. http://dx.doi.org/10.4028/www.scientific.net/msf.687.784.

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Hydrogenated amorphous carbon (a-C:H) films were deposited on aluminium alloy substrates by microwave electron cyclotron resonance chemical vapor deposition(ECR-PECVD) at different substrate pulse bias voltage. In order to enhance the interface bonding strength between the film and Al alloy substrate, a 50nm silicon film was firstly fabricated on aluminium alloy substrate by unbalanced magnetron sputtering. The fiction and wear properties of the a-C:H films were evaluated using a ball-on-disk tribometer in air at room temperature. The results showed that the tribological properties of the a-C:
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Do, Ngoc-Tu, Van-Hai Dinh, Le Van Lich, Hong-Hue Dang-Thi, and Trong-Giang Nguyen. "Effects of Substrate Bias Voltage on Structure of Diamond-Like Carbon Films on AISI 316L Stainless Steel: A Molecular Dynamics Simulation Study." Materials 14, no. 17 (2021): 4925. http://dx.doi.org/10.3390/ma14174925.

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With the recent significant advances in micro- and nanoscale fabrication techniques, deposition of diamond-like carbon films on stainless steel substrates has been experimentally achieved. However, the underlying mechanism for the formation of film microstructures has remained elusive. In this study, the growth processes of diamond-like carbon films on AISI 316L substrate are studied via the molecular dynamics method. Effects of substrate bias voltage on the structure properties and sp3 hybridization ratio are investigated. A diamond-like carbon film with a compact structure and smooth surface
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Cui, Jin Feng, Li Qiang, Bin Zhang, Xiao Ling, and Jun Yan Zhang. "Effect of Substrate Bias Voltage on the Mechanical and Tribological Properties of Low Concentration Ti-Containing Diamond Like Carbon Films." Applied Mechanics and Materials 182-183 (June 2012): 232–36. http://dx.doi.org/10.4028/www.scientific.net/amm.182-183.232.

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Ti containing hydrogenated diamond like carbon films (Ti-DLC) was deposited on Si substrates at room temperature by magnetron sputtering Ti-twin target in methane and argon mixture atmosphere via changing the substrate bias voltage. The Ti atomic concentration in the film is less than 0.57% and exists mainly in the form of metallic titanium rather than TiC, confirmed by XPS analysis. The internal compressive stress of the film decreases monotonically with the substrate bias voltage increase. However, the hardness values of the film keep at level (12 GPa) without almost any obvious change with
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Xu, Feng, Dun Wen Zuo, Wen Zhuang Lu, Xiang Feng Li, Bing Kun Xiang, and Min Wang. "Preparation of Nanocrystalline Diamond Films on Molybdenum Substrate by Double Bias Method." Key Engineering Materials 315-316 (July 2006): 646–50. http://dx.doi.org/10.4028/www.scientific.net/kem.315-316.646.

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The synthesis of nanocrystalline diamond film on polycrystalline molybdenum substrates was carried out by using of self-made hot filament chemical vapor deposited (HFCVD) system. Positive bias voltage on the grid electrode on top of hot filaments and negative bias voltage on the substrate were applied. High purity and extremely smooth nanocrystalline diamond films were successfully prepared by using the double bias method. Raman, SEM, XRD and AFM results show that the diamond films obtained have grain sizes less than 20nm, nucleation density higher than 1011cm-1. The mechanism of double bias i
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Panitchakan, H., and Pichet Limsuwan. "The Properties of Al2O3 Films Deposited onto Al2O3-TiC and Si Substrates by RF Diode Sputtering." Applied Mechanics and Materials 313-314 (March 2013): 126–30. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.126.

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The Al2O3 films were deposited onto Al2O3-TiC and Si (100) substrates by RF sputtering technique by varying powers sputter target, substrate bias voltages and fixed process pressure 25 mTorr which aim to achieve high deposition rate and investigated film properties onto different types. Result showed significant power sputter target to deposition rate both substrates and film properties depend on type of substrate. The power sputter target at 8kW and substrate bias voltage at -150 V is optimum deposition condition to provide deposition rate is 53.97nm/min for Al2O3-TiC substrate and 51.50nm/mi
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Yang, Ru Yuan, Cheng Tang Pan, and Chien Wei Huang. "Effect of the Bias Voltage on the Structure, Mechanical, Electronic and Optical Properties of the Low Temperature ZnO Thin Films Deposited by Using Cathodic Vacuum Arc Deposition System on Plastic Substrates." Materials Science Forum 773-774 (November 2013): 287–92. http://dx.doi.org/10.4028/www.scientific.net/msf.773-774.287.

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The un-doped zinc oxide (ZnO) films on the polyethylene terephthalate (PET) substrate at a low temperature (<75°C) by using cathode vacuum arc deposition (CVAD) system with different negative substrate bias voltage applied between 0 and -100 V. The material, mechanical, optical and electrical properties were investigated and discussed. The results show that all ZnO thin films have (002) preferred orientation, an average transmittance was over than 70 % in the visible region. Calculated band gap values are all around 3.2 eV with the different substrate bias voltages. The ZnO thin films with r
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Hu, Zhiyuan, Zhangli Liu, Hua Shao, et al. "Radiation Hardening by Applying Substrate Bias." IEEE Transactions on Nuclear Science 58, no. 3 (2011): 1355–60. http://dx.doi.org/10.1109/tns.2011.2138160.

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Gai, Pratibha L., Rahul Mitra, and Julia R. Weertman. "Structural variations in nanocrystalline nickel films." Pure and Applied Chemistry 74, no. 9 (2002): 1519–26. http://dx.doi.org/10.1351/pac200274091519.

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Nanocrystalline nickel films of technological importance have been grown on various liquid nitrogen-cooled substrates by magnetron sputtering with and without a substrate bias. The atomic structural and chemical studies have unveiled variations in inter- and intragranular structures under the different process conditions. The origin and the development of the crystallization process with and without the substrate bias voltage have been inferred from the results.
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Dissertations / Theses on the topic "Substrate bias"

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Oberste, Berghaus Jürg. "Substrate bias assisted RF thermal plasma diamond deposition." Thesis, McGill University, 2000. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=37803.

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Polycrystalline diamond films are produced by chemical vapor deposition (CVD) in a r.f.-induction thermal plasma system. A dc bias voltage between -400 V and +500 V is applied to the deposition substrate. This is made possible by maintaining the reactor environment at ground potential and introducing a high-impedance, high-power filter network, eliminating the r.f. voltage drop across the plasma-probe junction. The Ar, H2, CH4 plasma (8.45% H2, 0.21% CH4) impinges on a molybdenum substrate probe (5 mm in diameter) in stagnation point flow. The resulting diamond films are analyzed by Scanning E
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Yoon, Hyungjin. "Effect of substrate bias and temperature on the structure of ion-plated titanium." Diss., Georgia Institute of Technology, 1987. http://hdl.handle.net/1853/19167.

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Vasyliev, V. V., A. A. Luchaninov, E. N. Reshetnyak, and V. E. Strelnitskij. "Comparative Characteristics of Stress and Structure of TiN and Ti0.5-xAl0.5YxN Coatings Prepared by Filtered Vacuum-Arc PIIID Method." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34913.

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A comparative study of the structure and stress state of Ti0.5-xAl0.5YxN and TiN coatings deposited under identical conditions from the filtered vacuum-arc plasma under high voltage pulsed bias potential on the substrate was carried out. It was found that for Ti0.5Al0.5N coatings the dependence of the residual stress on the amplitude of the pulsed voltage potential is non-monotonic with a minimum when the amplitude is of 1 kV. As for TiN films, a monotonic decrease in the level of residual stresses takes place when the amplitude of the potential is increased in the range 0-2.5 kV. Non-mon
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Baby, Aji. "Ion Energy Distribution Measurement at the Bias Substrate Electrode in Noble and Acetylene Gas Plasmas for Diamond - Like Carbon Deposition." Thesis, University of Ulster, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490034.

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This thesis describes the characterisation of acetylene-argon plasmas by mass and energy spectrometry as well as infra-red absorption and electrical techniques under conditions favourable to diamond-like carbon deposition. The neutral, positive ionic species and energy distributions measured in an ICP at the rf biased electrode are the first such measurements reported with this mixture under various bias and pressure conditions suited to DLC growth. These are compared to measurements taken in a CCP reactor at a remote location with respect to the driven electrctrode.
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Akkaya, S. S., V. V. Vasyliev, K. Kazmanl, et al. "Mechanical and Tribological Properties of TiN Coatings Produced by PIII&D Technique." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35187.

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The structure, mechanical and tribological properties TiN coatings рroduced with PIII&D by using rectilinear filtered vacuum arc plasma system are present. The results of scratch testing and wear reciprocating testing clearly revealed the positive effect of pulse bias (0.5÷2.5 kV) application on tribological behavior of the TiN coatings in comparison the coatings deposited with DC bias (150 V). Application of pulsed bias potential leads to a significant reduction in the friction coefficient and increasing of coatings wear resistance due to a change in their structure. The orientation of c
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Beresnev, V. M., O. V. Sobol’, Олександр Дмитрович Погребняк, et al. "About Peculiarities of the Influence of the Negative Bias Potential Applied to the Substrate During the Deposition Process on the Structural State and Properties of the Multilayer system MoN-CrN." Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42799.

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Applying transition metal nitrides of Mo and Cr, which are characterized by a relatively low heat of formation, as the components of the multilayer coating, the possibilities of elemental and structural engineering of vacuum-arc coatings under the influence of the bias potential Us and the reaction gas pressure PN are revealed. It was found that at a relatively small thickness of the layers of nanometer range, which provides superhard state of the coatings, the supply of Us with the value of above the critical leads to a drop in hardness, which can be explained by mixing of layers at the inter
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von, Haartman Martin. "Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors." Doctoral thesis, KTH, Mikroelektronik och Informationsteknik, IMIT, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3888.

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A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. The low-frequency noise was comprehensively characterized for different types of ope
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Silva, Andr? Stuwart Wayland Torres. "Propriedades magn?ticas de nanopart?culas de ferro em substratos antiferromagn?ticos." Universidade Federal do Rio Grande do Norte, 2007. http://repositorio.ufrn.br:8080/jspui/handle/123456789/16529.

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Made available in DSpace on 2014-12-17T15:14:43Z (GMT). No. of bitstreams: 1 AndreSWTS_capa_ate_secao2.pdf: 3305591 bytes, checksum: 5f27842b5915ba4ade82c5d3c89c759b (MD5) Previous issue date: 2007-12-07<br>Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior<br>The e?ect of ?nite size on the magnetic properties of ferromagnetic particles systems is a recurrent subject. One of the aspects wide investigated is the superparamagnetic limit where the temperature destroys the magnetic order of ferromagnetic small particles. Above the block temperature the thermal value of the magnetic mo
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Åberg, Emma. "Investigating the Neural Substrates and Neural Markers of Optimism and Optimism Bias : A Systematic Review." Thesis, Högskolan i Skövde, Institutionen för biovetenskap, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:his:diva-20609.

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Optimism refers to peoples’ general tendency to anticipate good outcomes in areas that are important to them. Numerous studies have shown that optimism is significantly correlated with improved physical and mental health. Optimism can come to an overly optimistic degree, called optimism bias. People generally expect better outcomes and fewer negative events to happen for themselves in the future compared to the average person. There are two sides to this: being optimistically biased might lead to risky behavior, but it might also ease people's worries about the future. To have a consistently n
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Кравченко, Ярослав Олегович, Ярослав Олегович Кравченко та Yaroslav Olehovych Kravchenko. "Структура та властивості багатошарових та багатоелементних покриттів нанометрового масштабу на основі (TiAlSiY)N/MeN (Me=Mo, Cr, Zr)". Thesis, Сумський державний університет, 2020. https://essuir.sumdu.edu.ua/handle/123456789/77077.

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Дисертаційна робота присвячена виявленню особливостей процесів синтезу, елементного і фазового складу, субструктури та властивостей багатоелементних та багатошарових покриттів нанометрового масштабу (TiAlSiY)N/MeN (Me=Mo, Cr, Zr), що синтезуються методом вакуумно-дугового осадження. Здійснено визначення зв'язків між структурою та механічними і трибологічними властивостями покриттів. Встановлено, що склад і кристалічна структура багатоелементних нітридних шарів в одношарових і багатошарових покриттях подібні: формуються тверді розчини на основі кубічного TiN з кристалічною граткою типу NaCl
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Books on the topic "Substrate bias"

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Zhang, Jing. Generation of substrate bias and current sources in CMOS technology. 1995.

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Stokes, Mark, and John Duncan. Dynamic Brain States for Preparatory Attention and Working Memory. Edited by Anna C. (Kia) Nobre and Sabine Kastner. Oxford University Press, 2014. http://dx.doi.org/10.1093/oxfordhb/9780199675111.013.032.

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This chapter considers how dynamic brain states continuously fine-tune processing to accommodate changes in behavioural context and task goals. First, the authors review the extant literature suggesting that content-specific patterns of preparatory activity bias competitive processing in visual cortex to favour behaviourally relevant input. Next, they consider how higher-level brain areas might provide a top-down attentional signal for modulating baseline visual activity. Extensive evidence suggests that working memory representations in prefrontal cortex are especially important for generatin
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Book chapters on the topic "Substrate bias"

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Barnat, Edward V., and Toh-Ming Lu. "Applications of a Pulsed Waveform to a Substrate: Pulsed Bias Sputtering." In Pulsed and Pulsed Bias Sputtering. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0411-5_8.

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Li, Quan, Y. Lifshitz, L. D. Marks, I. Bello, and S. T. Lee. "Nucleation and Growth of Cubic Boron Nitride Under Different Substrate Bias." In Surface Engineering. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118788325.ch18.

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Sreedhar, A., M. Hari Prasad Reddy, and S. Uthanna. "Substrate Bias Influenced Physical Characteristics of Nanocrystalline Silver Copper Oxide Films." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34216-5_46.

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Xu, Feng, Dun Wen Zuo, W. Z. Lu, Xiang Feng Li, Bing Kun Xiang, and Min Wang. "Preparation of Nanocrystalline Diamond Films on Molybdenum Substrate by Double Bias Method." In Advances in Machining & Manufacturing Technology VIII. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-999-7.646.

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Niu, Guo-fu, Gang Ruan, and Ting-ao Tang. "Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs." In Simulation of Semiconductor Devices and Processes. Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_45.

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Kuroda, Tadahiro, and Takayasu Sakurai. "Threshold-Voltage Control Schemes through Substrate-Bias for Low-Power High-Speed CMOS LSI Design." In Technologies for Wireless Computing. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1453-0_7.

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Nakakubo, Y., A. Matsuda, M. Kamei, H. Ohta, K. Eriguchi, and K. Ono. "Analysis of SI Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies." In Lecture Notes in Electrical Engineering. Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9379-0_8.

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Teixeira, V., and M. Andritschky. "Influence of Sputter Gas Pressure and Substrate Bias on Intrinsic Stress and Crystallinity of Coatings Produced by Magnetron Sputtering." In Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1727-2_7.

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Chun, S. Y., and Sang Jin Lee. "Substrate Bias Effects on the Structure of the Film by a Hybrid PVD and Plasma-Based Ion Implantation Process." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-966-0.452.

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Tam, P. L., P. W. Shum, Z. F. Zhou, and K. Y. Li. "Substrate Bias Effects on Mechanical and Tribological Properties of Nanoscale Multilayer CrTiAlN Coatings Prepared by Closed Field Unbalanced Magnetron Sputtering Ion Plating Method." In Advances in Composite Materials and Structures. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-427-8.885.

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Conference papers on the topic "Substrate bias"

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Gopalaswamy, A. D., and Utpal Das. "Microstrip and suspended substrate GaAs bias-T." In Photonics 2000: International Conference on Fiber Optics and Photonics, edited by S. K. Lahiri, Ranjan Gangopadhyay, Asit K. Datta, Samit K. Ray, B. K. Mathur, and S. Das. SPIE, 2001. http://dx.doi.org/10.1117/12.441316.

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Feng Xu, Xiaoma Jiang, and Ke Wu. "FDFD modeling of substrate integrated waveguide without phase-bias." In 2005 European Microwave Conference. IEEE, 2005. http://dx.doi.org/10.1109/eumc.2005.1610060.

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Inokawa, Hiroshi, Yuto Goi, Toshiaki Yorigami, et al. "Substrate Bias Effect on SOI-based Thermoelectric Power Generator." In 2021 17th International Conference on Quality in Research (QIR): International Symposium on Electrical and Computer Engineering. IEEE, 2021. http://dx.doi.org/10.1109/qir54354.2021.9716172.

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Matsuda, Asahiko, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, and Kouichi Ono. "Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency." In 2013 International Conference on IC Design & Technology (ICICDT). IEEE, 2013. http://dx.doi.org/10.1109/icicdt.2013.6563334.

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Trevisoli, Renan D., Rodrigo T. Doria, Michelly de Souza, and Marcelo A. Pavanello. "The influence of the substrate bias in Junctionless nanowire transistors." In 2013 Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2013. http://dx.doi.org/10.1109/sbmicro.2013.6676170.

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Simoen, E., E. Voroshazi, J. Mitard, et al. "Substrate bias effect on Ge pMOSFETs with and without halo." In 9th International Conference on Ultimate Integration on Silicon. IEEE, 2008. http://dx.doi.org/10.1109/ulis.2008.4527130.

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Liang, Haifeng, Hengping Liu, and Yang Zhou. "Effect of substrate bias and arc current on AlN films." In 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, edited by Li Yang, John M. Schoen, Yoshiharu Namba, and Shengyi Li. SPIE, 2009. http://dx.doi.org/10.1117/12.830872.

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Inukai, Takashi, Hyunsik Im, and Toshiro Hiramoto. "Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.d-2-5.

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Li, De-Jun, Murat U. Guruz, and Yip-Wah Chung. "Ultrathin CNx Overcoats for 1 Tb/in2 Hard Disk Drive Systems." In STLE/ASME 2001 International Joint Tribology Conference. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/trib-nano2001-108.

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Abstract Carbon nitride films were grown on silicon and hard disk substrates using pulsed dc magnetron sputtering in a single cathode deposition system. Substrates were mounted on a specially designed rotating holder that allowed 45° tilt angle and substrate rotation about the surface normal up to 20 rpm. AFM scans over 10×10 μm2 showed that 50 nm thick CNx films prepared under optimum substrate bias conditions have r.m.s. surface roughness almost four times lower than those prepared without substrate tilt and rotation. We observed a two-fold reduction in corrosion damage for hard disk substra
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Zanolla, Nicola, Domagoj Siprak, Marc Tiebout, Peter Baumgartner, Enrico Sangiorgi, and Claudio Fiegna. "The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734476.

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