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Journal articles on the topic 'Substrate bias'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 May 2022

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1

Pang, Xiaolu, Huisheng Yang, Shijian Shi, Kewei Gao, Yanbin Wang, and Alex A. Volinsky. "Microstructure and mechanical properties of Ti/AlTiN/Ti-diamondlike carbon composite coatings on steel." Journal of Materials Research 25, no. 11 (2010): 2159–65. http://dx.doi.org/10.1557/jmr.2010.0281.

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Ti/AlTiN/Ti-diamondlike carbon (DLC) composite coatings were deposited by mid-frequency magnetron sputtering and Hall ion source-assisted deposition on high-speed steel W18Cr4V substrates. The coating microstructure and mechanical properties, including hardness, elastic modulus, coefficient of friction, and wear properties were investigated by scanning electron microscopy, Raman spectroscopy, scratch and ball-on-disk friction tests, respectively. Fairly smooth composite coating with strong interfacial adhesion and good mechanical properties was produced. The substrate bias increases sp3 bonds

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2

WU, XIANCHENG, BO WANG, GUANGHUA CHEN, and HULIN LI. "INFLUENCES OF PREPARATION CONDITIONS ON CNx THIN FILM STRUCTURE AND CHARACTERISTICS." International Journal of Modern Physics B 16, no. 06n07 (2002): 1105–9. http://dx.doi.org/10.1142/s0217979202010944.

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Carbon nitride (CNx) thin films have been synthesized by hot filament assisted r.f. plasma-enhanced chemical vapor deposition with negative bias methods on Si (100) substrates. The influences on the thin film structure and hardness characteristics of r.f. power and substrate negative bias have been emphatically investigated. The optimal preparation parameters have been summarized as follows: r.f. power of 200W, substrate negative bias of -200V, substrate temperature of about 600°C, total reactive gas pressure of about 110Pa, flow ratio of CH4 to N2 of 1 : 5.5.

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3

Gui, X., Y. Y. Su, S. Y. Li, et al. "Tribological Properties of Hydrogenated Amorphous Carbon (a-C:H) Films on Aluminium Alloy Substrate under Different Substrate Bias Voltages." Materials Science Forum 687 (June 2011): 784–90. http://dx.doi.org/10.4028/www.scientific.net/msf.687.784.

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Hydrogenated amorphous carbon (a-C:H) films were deposited on aluminium alloy substrates by microwave electron cyclotron resonance chemical vapor deposition(ECR-PECVD) at different substrate pulse bias voltage. In order to enhance the interface bonding strength between the film and Al alloy substrate, a 50nm silicon film was firstly fabricated on aluminium alloy substrate by unbalanced magnetron sputtering. The fiction and wear properties of the a-C:H films were evaluated using a ball-on-disk tribometer in air at room temperature. The results showed that the tribological properties of the a-C:

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4

Do, Ngoc-Tu, Van-Hai Dinh, Le Van Lich, Hong-Hue Dang-Thi, and Trong-Giang Nguyen. "Effects of Substrate Bias Voltage on Structure of Diamond-Like Carbon Films on AISI 316L Stainless Steel: A Molecular Dynamics Simulation Study." Materials 14, no. 17 (2021): 4925. http://dx.doi.org/10.3390/ma14174925.

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With the recent significant advances in micro- and nanoscale fabrication techniques, deposition of diamond-like carbon films on stainless steel substrates has been experimentally achieved. However, the underlying mechanism for the formation of film microstructures has remained elusive. In this study, the growth processes of diamond-like carbon films on AISI 316L substrate are studied via the molecular dynamics method. Effects of substrate bias voltage on the structure properties and sp3 hybridization ratio are investigated. A diamond-like carbon film with a compact structure and smooth surface

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5

Cui, Jin Feng, Li Qiang, Bin Zhang, Xiao Ling, and Jun Yan Zhang. "Effect of Substrate Bias Voltage on the Mechanical and Tribological Properties of Low Concentration Ti-Containing Diamond Like Carbon Films." Applied Mechanics and Materials 182-183 (June 2012): 232–36. http://dx.doi.org/10.4028/www.scientific.net/amm.182-183.232.

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Ti containing hydrogenated diamond like carbon films (Ti-DLC) was deposited on Si substrates at room temperature by magnetron sputtering Ti-twin target in methane and argon mixture atmosphere via changing the substrate bias voltage. The Ti atomic concentration in the film is less than 0.57% and exists mainly in the form of metallic titanium rather than TiC, confirmed by XPS analysis. The internal compressive stress of the film decreases monotonically with the substrate bias voltage increase. However, the hardness values of the film keep at level (12 GPa) without almost any obvious change with

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6

Xu, Feng, Dun Wen Zuo, Wen Zhuang Lu, Xiang Feng Li, Bing Kun Xiang, and Min Wang. "Preparation of Nanocrystalline Diamond Films on Molybdenum Substrate by Double Bias Method." Key Engineering Materials 315-316 (July 2006): 646–50. http://dx.doi.org/10.4028/www.scientific.net/kem.315-316.646.

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The synthesis of nanocrystalline diamond film on polycrystalline molybdenum substrates was carried out by using of self-made hot filament chemical vapor deposited (HFCVD) system. Positive bias voltage on the grid electrode on top of hot filaments and negative bias voltage on the substrate were applied. High purity and extremely smooth nanocrystalline diamond films were successfully prepared by using the double bias method. Raman, SEM, XRD and AFM results show that the diamond films obtained have grain sizes less than 20nm, nucleation density higher than 1011cm-1. The mechanism of double bias i

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7

Panitchakan, H., and Pichet Limsuwan. "The Properties of Al₂O₃ Films Deposited onto Al₂O₃-TiC and Si Substrates by RF Diode Sputtering." Applied Mechanics and Materials 313-314 (March 2013): 126–30. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.126.

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The Al2O3 films were deposited onto Al2O3-TiC and Si (100) substrates by RF sputtering technique by varying powers sputter target, substrate bias voltages and fixed process pressure 25 mTorr which aim to achieve high deposition rate and investigated film properties onto different types. Result showed significant power sputter target to deposition rate both substrates and film properties depend on type of substrate. The power sputter target at 8kW and substrate bias voltage at -150 V is optimum deposition condition to provide deposition rate is 53.97nm/min for Al2O3-TiC substrate and 51.50nm/mi

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8

Yang, Ru Yuan, Cheng Tang Pan, and Chien Wei Huang. "Effect of the Bias Voltage on the Structure, Mechanical, Electronic and Optical Properties of the Low Temperature ZnO Thin Films Deposited by Using Cathodic Vacuum Arc Deposition System on Plastic Substrates." Materials Science Forum 773-774 (November 2013): 287–92. http://dx.doi.org/10.4028/www.scientific.net/msf.773-774.287.

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The un-doped zinc oxide (ZnO) ﬁlms on the polyethylene terephthalate (PET) substrate at a low temperature (<75°C) by using cathode vacuum arc deposition (CVAD) system with different negative substrate bias voltage applied between 0 and -100 V. The material, mechanical, optical and electrical properties were investigated and discussed. The results show that all ZnO thin films have (002) preferred orientation, an average transmittance was over than 70 % in the visible region. Calculated band gap values are all around 3.2 eV with the different substrate bias voltages. The ZnO thin films with r

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9

Hu, Zhiyuan, Zhangli Liu, Hua Shao, et al. "Radiation Hardening by Applying Substrate Bias." IEEE Transactions on Nuclear Science 58, no. 3 (2011): 1355–60. http://dx.doi.org/10.1109/tns.2011.2138160.

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10

Gai, Pratibha L., Rahul Mitra, and Julia R. Weertman. "Structural variations in nanocrystalline nickel films." Pure and Applied Chemistry 74, no. 9 (2002): 1519–26. http://dx.doi.org/10.1351/pac200274091519.

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Nanocrystalline nickel films of technological importance have been grown on various liquid nitrogen-cooled substrates by magnetron sputtering with and without a substrate bias. The atomic structural and chemical studies have unveiled variations in inter- and intragranular structures under the different process conditions. The origin and the development of the crystallization process with and without the substrate bias voltage have been inferred from the results.

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11

Lian, Yun Song, Jian Xin Deng, Shi Peng Li, Guang Yuan Yan, and Hong Wei Cheng. "Influence of Substrate Bias Voltage on Properties of Medium-Frequency Magnetron Sputtering WS₂ Soft Coatings." Applied Mechanics and Materials 229-231 (November 2012): 2427–31. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.2427.

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WS2 soft coatings were deposited by medium-frequency magnetron sputtering, multi-arc ion plating and ion beam assisted deposition technique on the YT15 cemented carbide substrates. The influence of the substrate bias voltage on the coating properties has been studied. The coatings exhibited a dense and fine grained structure. WS2 soft coatings with substrate bias voltage of -100 V revealed a better coating properties than other four samples, as the best crystallization of (002) preferred crystal orientation of Ⅱ texture, the most smooth and uniform microstructure of the coating, the largest cr

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12

Gilewicz, Adam, Roman Jędrzejewski, Piotr Myśliński, and Bogdan Warcholiński. "Structure, morphology and mechanical properties of AlCrN coatings obtained by the method of cathodic arc evaporation." Inżynieria Powierzchni 23, no. 2 (2018): 61–69. http://dx.doi.org/10.5604/01.3001.0012.2336.

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CrAlN coatings have been formed on steel substrates (HS6-5-2) using cathodic arc evaporation. The influence of nitrogen pres-sure and substrate bias voltage on the properties of CrAlN coatings formed from Al80Cr20 cathode, such as: chemical and phase composition of the coatings, their surface morphology, deposition rate, hardness and adhesion to the substrate have been investigated. It has been determined that the rate of the deposition of coatings in the nitrogen atmosphere with the pressure of 3 Pa is the highest and that with the increase of the negative bias voltage of the substrate the de

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13

Gatti, U., V. Liberali, F. M. Maloberti, and P. O'Leary. "Automatic switching of substrate bias or well bias in CMOS-ICs." Electronics Letters 26, no. 17 (1990): 1381. http://dx.doi.org/10.1049/el:19900888.

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14

Huang, Hao, Zhen Xi Li, Min Juan Wang, and Chuan Xie. "Microstructural and Mechanical Properties of TiAlN and Ti₃AlN Films Deposited by Reactive Magnetron Sputtering." Materials Science Forum 816 (April 2015): 283–88. http://dx.doi.org/10.4028/www.scientific.net/msf.816.283.

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Two series of TiAlN and Ti3AlN films have been deposited on Si (100) substrates by reactive magnetron sputtering TiAl and Ti3Al targets in Ar/N2 mixture. The effects of incoming ions energies controlled by Vb on the microstructure, morphologies, residual stress and hardness have been explored by XRD, SEM, AFM, surface profiler and nanoindentation. The results showed that single phase cubic Ti-Al-N solid solubility formed by Al atoms replacing some Ti atoms in the cubic TiN lattice occured in both TiAlN and Ti3AlN films. As substrate bias increased, the preferred orientation firstly changed fro

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15

Ma, G. H. M., Y. H. Lee, and J. T. Glass. "Electron microscopy of diamond films grown by bias-controlled chemical vapor deposition." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 1088–89. http://dx.doi.org/10.1017/s0424820100178574.

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The synthesis of diamond films by various low pressure methods has attracted much attention recently. The primary reasons for the great interest are diamond’s substantial potential as a high temperature semiconductor, heat sink, wear resistant coating, etc. Most recently reported research has been directed towards achieving better films quality and higher growth rates. In the present study, a biased hot filament chemical vapor deposition system (or Bias Controlled CVD, BCCVD) has been utilized to examine the role of charged species in the deposition of diamond. Utilizing this system, high qual

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16

Tzeng, S. S., Wei Min Wu, and J. S. Hsu. "Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition." Materials Science Forum 539-543 (March 2007): 3574–79. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.3574.

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Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~

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17

UTHANNA, S., M. HARI PRASAD REDDY, and J. F. PIERSON. "OXYGEN PARTIAL PRESSURE AND SUBSTRATE BIAS VOLTAGE INFLUENCED STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED Ag2Cu2O3 FILMS." International Journal of Nanoscience 10, no. 04n05 (2011): 653–57. http://dx.doi.org/10.1142/s0219581x11009209.

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Ag2Cu2O3 films were deposited on glass substrates held at 303 K by RF magnetron sputtering of Ag70 Cu30 target at different oxygen partial pressures and substrate bias voltages. Single phase Ag2Cu2O3 films were formed at an oxygen partial pressure of 2 × 10-2 Pa . The films deposited at oxygen partial pressure 2 × 10-2 Pa and substrate bias voltage of -60 V were nanocrystalline with crystallite size of 20 nm, low electrical resistivity of 3.9 Ωcm and optical band gap of 2.02 eV.

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18

HAMZAH, ESAH, MUBARAK ALI, and MOHD RADZI HJ MOHD TOFF. "EFFECT OF SUBSTRATE BIAS ON FRICTION COEFFICIENT, ADHESION STRENGTH AND HARDNESS OF TiN-COATED TOOL STEEL." Surface Review and Letters 13, no. 06 (2006): 763–71. http://dx.doi.org/10.1142/s0218625x06008827.

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In the present study, TiN coatings have been deposited on D2 tool steel substrates by using cathodic arc physical vapor deposition technique. The objective of this research work is to determine the usefulness of TiN coatings in order to improve the micro-Vickers hardness and friction coefficient of TiN coating deposited on D2 tool steel, which is widely used in tooling applications. A Pin-on-Disc test was carried out to study the coefficient of friction versus sliding distance of TiN coating deposited at various substrate biases. The standard deviation parameter during tribo-test result showed

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19

Vopat, Tomas, Martin Sahul, Marián Haršáni, Tomáš Zlámal, and Ondrej Vortel. "Observation of Coating-Substrate Adhesion of Nanocomposite Hard Coating with Respect to the Deposition Parameters and Surface Finishing of Cemented Carbide Substrate." Materials Science Forum 990 (May 2020): 231–38. http://dx.doi.org/10.4028/www.scientific.net/msf.990.231.

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The paper deals with the issue of coating and surface finishing with edge preparation prior to the coating. Nanocomposite AlCrSiN hard coatings were deposited on WC-Co substrates with a negative substrate bias voltage in range of-80 to-120 V using cathodic arc evaporation system. The effect of variation in the bias voltage on the coating-substrate adhesion and nanohardness was investigated. The maximum nanohardness of coating was 37.7 ± 1.5 GPa with the good coating-substrate adhesion. Static Mercedes indentation test was performed on a Rockwell-type hardness tester. The indents were studied b

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20

Bhandarkar, Swapneel, and Sangeeta Nakhate. "Asymmetric Inductive Substrate bias RF SPDT Switch." Materials Today: Proceedings 4, no. 9 (2017): 10351–55. http://dx.doi.org/10.1016/j.matpr.2017.06.379.

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21

Luijten, Maartje, Dick J. Veltman, Wim van den Brink, et al. "Neurobiological substrate of smoking-related attentional bias." NeuroImage 54, no. 3 (2011): 2374–81. http://dx.doi.org/10.1016/j.neuroimage.2010.09.064.

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22

Zhu, Mao Dong, Dong Ping Zhang, Yi Liu, et al. "Dependence of Negative Substrate Bias on the Optical and Electrical Properties of W-Doped Vanadium Dioxide Thin Films." Materials Science Forum 847 (March 2016): 184–89. http://dx.doi.org/10.4028/www.scientific.net/msf.847.184.

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W-doped VO2 films were prepared by DC reactive magnetron sputtering with various substrate bias. The microstructure, surface morphology, electrical and optical performances of the films were characterized by x-ray diffraction, scanning electron microscope, four-point probe method and spectrophotometer, respectively. The effect of substrate bias on microstructure, electrical and optical properties of sputtered W-doped VO2 films was studied. The XRD results reveal that all samples exhibit preferential VO2 (011) lattice orientation except the as-grown sample in our experiment. All the samples app

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23

Jiang, Hui, Hai Yang Dai, and Ning Kang Huang. "Effects of Bias on the Bonding Structure and Mechanical Property of a-C:H Films Deposited by MFPUMST." Advanced Materials Research 507 (April 2012): 38–43. http://dx.doi.org/10.4028/www.scientific.net/amr.507.38.

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Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the methane-argon mixed gases. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. Nano-hardness for these films prepared under different substrate bias voltage show that nano-hardness increase with increasing substrate bias voltage from 0 to 100 V, and then decrease from 100 up to 20

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Falkingham, P. L., K. T. Bates, L. Margetts, and P. L. Manning. "The ‘Goldilocks’ effect: preservation bias in vertebrate track assemblages." Journal of The Royal Society Interface 8, no. 61 (2011): 1142–54. http://dx.doi.org/10.1098/rsif.2010.0634.

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Finite-element analysis was used to investigate the extent of bias in the ichnological fossil record attributable to body mass. Virtual tracks were simulated for four dinosaur taxa of different sizes ( Struthiomimus, Tyrannosaurus, Brachiosaurus and Edmontosaurus ), in a range of substrate conditions. Outlines of autopodia were generated based upon osteology and published soft-tissue reconstructions. Loads were applied vertically to the feet equivalent to the weight of the animal, and distributed accordingly to fore- and hindlimbs where relevant. Ideal, semi-infinite elastic–plastic substrates

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25

Hu, Chang Ji, and Zhen Hui He. "Influence of Bias Voltage on the Structural Properties and Adhesive Performance of ZnO Thin Films Deposited by Cathodic Vacuum Arc Deposition on Polyimide Foil Substrates." Advanced Materials Research 160-162 (November 2010): 194–99. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.194.

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ZnO thin films were deposited on polyimide foil substrates using cathodic vacuum arc deposition technique. X-ray diffraction was used to investigate the influence of bias voltage on the structure of ZnO thin films. The results show that all the samples have (002) preferred orientation. The internal stress of the films is compressive stress which increases with the bias voltage. Fragmentation test shows that the intrinsic interfacial shear strength of ZnO thin film without bias voltage is slightly lower than the shear yield strength of polyimide substrate; the intrinsic interfacial shear streng

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26

Dai, Hai Yang, Feng Xiao Zhai, Xue Rui Cheng, Lei Su, and Zhen Ping Chen. "Effects of Substrate Bias on the Microstructure and Properties of a-C:H Films Deposited by MFPUMST." Advanced Materials Research 476-478 (February 2012): 2344–47. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.2344.

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Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the acetylene-argon mixed gases. These films were characterized with Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. AFM and nanoindentation results reveal that the surface roughness and nano-hardness of the fi

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27

Yau, Bao-Shun, Jow-Lay Huang, and Ming-Chi Kan. "Effects of substrate bias on nanocrystal-(Ti, Al)Nx/amorphous-SiNy composite films." Journal of Materials Research 18, no. 8 (2003): 1985–90. http://dx.doi.org/10.1557/jmr.2003.0275.

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Nanocrystal-(Ti, Al)Nx/amorphous-SiNy composite films were prepared in a codeposition process under different substrate bias voltages. The effects of substrate bias voltage on the deposition rate, composition, microstructure, and mechanical properties of nanocomposite films were investigated. Results indicated that the films with bias voltages caused resputtering due to the bombardment of high-energy ions on film surface. The resputtering effect had substantial influence on deposition rate, surface morphology, and composition of films. The films with (220) preferred orientation were also obser

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28

Hwang, Un Hak. "Upgrading the Ti/TiN Film Depositions on KP-1 Steel by Using the Anode Ring Bias Voltage." Advanced Materials Research 1145 (March 2018): 65–74. http://dx.doi.org/10.4028/www.scientific.net/amr.1145.65.

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By newly adopting of a two-step bias voltage-sustained nitrification of the plasma process the titanium nitride films which applied to the mold base steel KP-1 are manufactured. The two-step process of biased voltages was introduced in order to consider microscopic kinematics of Ti ion bombardments which lead to a deep study on the plasmas including surface temperature of substrates associated with nitrification the KP-1 surface. For supplying of the additional biased voltage to the conventional coater, an anode-biased ring was installed near the plasma source and it ultimately upgraded the ty

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29

Akhtar, Pervez, and Riaz Mahmud. "Compositional and Deposition Rate Dependence upon RF Substrate Bias of RF Sputtered Ni-Fe Films." Advanced Materials Research 488-489 (March 2012): 452–56. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.452.

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82% Ni-Fe films have been prepared using Radio frequency (R.F) sputtered, R.F induced substrate bias. The results presented are of study of sputter films deposition at various RF substrate bias conditions so that suitable sputtering rate with optimum (target) composition could be determined for magnetoresistive sensing applications. Films have been sputtered with substrate temperature of 200° C, sputter gas (argon) pressure of 10mTorr with film thicknesses near 1000 °A. Substrate bias potential in the range 0 V to -400 V is varied in order to determine its dependence upon film composition and

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Vopát, Tomáš, Martin Sahul, Marián Haršáni, Ondřej Vortel, and Tomáš Zlámal. "The Tool Life and Coating-Substrate Adhesion of AlCrSiN-Coated Carbide Cutting Tools Prepared by LARC with Respect to the Edge Preparation and Surface Finishing." Micromachines 11, no. 2 (2020): 166. http://dx.doi.org/10.3390/mi11020166.

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Nanocomposite AlCrSiN hard coatings were deposited on the cemented carbide substrates with a negative substrate bias voltage within the range of −80 to −120 V using the cathodic arc evaporation system. The effect of variation in the bias voltage on the coating-substrate adhesion and nanohardness was investigated. It was clear that if bias voltage increased, nanohardness increased in the range from −80 V to −120 V. The coating deposited at the bias voltage of −120 V had the highest nanohardness (37.7 ± 1.5 GPa). The samples were prepared by brushing and wet microblasting to finish a surface and

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Khánh, Nguyen Quoc, János Radó, Zsolt Endre Horváth, Saeedeh Soleimani, Binderiya Oyunbolor, and János Volk. "The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films." Journal of Materials Science: Materials in Electronics 31, no. 24 (2020): 22833–43. http://dx.doi.org/10.1007/s10854-020-04810-9.

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AbstractSubstrate bias was applied for AlN deposition on rolled Ni sheet during pulse DC reactive sputtering to overcome the difficulty caused by thermal expansion mismatch between Ni substrate and AlN upon substrate heating. It was shown by Piezoresponse Force Microscopy (PFM) that the quality of the deposited AlN layer depends strongly on the negative substrate bias, i.e., the energy transferred via the bombardment of the accelerated positive ions on the sample. As the negative substrate bias becomes larger, the so formed layer shows higher piezoresponse, and better homogeneity. A Z-cut LiNb

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32

Bai, X. Q., and J. Li. "Study on Interfacial Bonding Strength of TiN Films Prepared by Magnetron Sputtering at Low Temperature." Key Engineering Materials 373-374 (March 2008): 155–58. http://dx.doi.org/10.4028/www.scientific.net/kem.373-374.155.

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Reactive magnetron sputtering technique was used to gain titanium nitride (TiN) films on W18Cr4V high-speed steel and GCr15 bearing steel substrates at low temperature. The Surface chemical composition of the films was analyzed using energy dispersive X-ray spectroscopy (EDXS) and the surface morphology was examined using atomic force microscopy (AFM). Moreover, a series of experiments have been conducted to study the relationship between interfacial bonding strength and some major technological parameters, that is, substrate surface roughness, negative bias voltage, intermediate transition la

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Yamamoto, Syuji, and Hiroshi Ichimura. "Effect of substrate bias voltage on the properties of arc ion-plated TiN films onto high speed steels." Journal of Materials Research 11, no. 5 (1996): 1149–56. http://dx.doi.org/10.1557/jmr.1996.0148.

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The effect of substrate bias voltage on the properties of arc ion-plated TiN films onto high speed steels has been investigated. The high density structure with a large crystallite size grew at the high bias voltage. TiN films deposited by higher bias exhibited strong preferential (111) orientation from XRD. The internal stress of TiN films increased at first with increasing substrate bias voltage; however, it decreased as the bias voltage increased over 100 V. The coating adhesion measured by the scratch tester increased with increasing bias voltage, and this is coupled with a cohesion of fil

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Panitchakan, H., and Pichet Limsuwan. "Stress Induced in Al₂O₃ Films as Deposited onto Al₂O₃TiC Substrate by RF Diode Sputtering." Advanced Materials Research 622-623 (December 2012): 716–19. http://dx.doi.org/10.4028/www.scientific.net/amr.622-623.716.

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Al2O3films were deposited onto Al2O3-TiC substrates by RF diode sputtering. The Al2O3films were deposited at various substrate bias voltages from -80 to -180 V, sputtering powers from 4 to 8 kW and operating pressures from 20 to 30 mTorr. The stress induced in Al2O3 films was measured. The results show that the stress induced in all prepared Al2O3films is tensile stress. The stress slightly increased with increasing substrate bias voltage whereas it increased linearly with increasing operating pressure. However, the stress was almost constant as the sputtering was increased from 5 to 8 kW and

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35

Sahadevan, Ajeesh M., Jae S. Son, Hyunsoo Yang, Aaron J. Danner, and Charanjit S. Bhatia. "Substrate bias effect on AlOxbased magnetic tunnel junctions." Journal of Physics: Conference Series 266 (January 1, 2011): 012105. http://dx.doi.org/10.1088/1742-6596/266/1/012105.

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Das, Utpal, Ravi K. Joshi, Dilip Biswas, and Animesh Biswas. "Suspended substrate bias-T at 2.5-10 GHz." Microwave and Optical Technology Letters 27, no. 6 (2000): 444–47. http://dx.doi.org/10.1002/1098-2760(20001220)27:6<444::aid-mop21>3.0.co;2-q.

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HOU, Q. R., H. Y. ZHANG, and Y. B. CHEN. "DEPOSITION OF CHROMIUM-CARBON FILMS BY MAGNETRON SPUTTERING OF CHROMIUM AND CARBON TARGETS." Modern Physics Letters B 19, no. 21 (2005): 1039–50. http://dx.doi.org/10.1142/s0217984905009043.

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Chromium-carbon films have been deposited on silicon substrates by magnetron sputtering of chromium and carbon targets in pure argon atmosphere. The composition of the films was examined by Auger electron spectroscopy. Oxygen, nitrogen, and iron were the major impurities incorporated in the films. The mechanical and electrical properties of the films were investigated as a function of negative bias voltage applied to substrates. The hardness and elastic modulus were measured by a nano-indenter and the values are around 17.0±0.9 GPa and 245±11 GPa , respectively. The hardness and elastic modulu

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Hanizam, H., Md Nizam Abd Rahman, Noraiham Mohamad, and A. R. Soufhwee. "Surface Energy and Crystallite Size Comparisons by Applying Direct Current and Pulse Direct Current on Substrate Bias in PVD Process." Applied Mechanics and Materials 315 (April 2013): 98–102. http://dx.doi.org/10.4028/www.scientific.net/amm.315.98.

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Surface morphology homogeneity and energy modifications for in situ PVD process are two critical factors to prevent unexpected adhesion failure during machining or service. Unlike during film depositing, there is still much gap to be explored on applying pulsed biasing concepts to the substrate during in situ, to ensure the substrate surface readiness prior to film coating. The purpose of this paper is to study the effects of conventional direct current (DC) and pulse direct current (PDC) applied at substrate bias to the surface energy and crystallite size. Tungsten carbide (WC) cutting tool i

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Piascik, Jeffrey R., Qi Zhang, Christopher A. Bower, Jeffrey Y. Thompson, and Brian R. Stoner. "Evidence of stress-induced tetragonal-to-monoclinic phase transformation during sputter deposition of yttria-stabilized zirconia." Journal of Materials Research 22, no. 4 (2007): 1105–11. http://dx.doi.org/10.1557/jmr.2007.0128.

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Partially stabilized zirconia (PSZ) has been studied extensively, due to its high-temperature stability and stress-induced tetragonal (T)-to-monoclinic (M) martensitic phase transformation. This T ⇒ M phase transformation has been well-documented for bulk PSZ, but limited data exist for PSZ thin films. Data will be presented that support a stress-induced T ⇒ M transformation mechanism that occurs during sputter deposition in the presence of a substrate bias. Substrate bias (0–50 W) was originally applied to increase film density, modify microstructure, and vary film stress. The films were depo

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EFEOGLU, Ihsan. "Determining Optimum Parameters for Adhesion Properties of Ta-DLC Films Using Taguchi Experimental Design." Brilliant Engineering 1, no. 1 (2019): 1–6. http://dx.doi.org/10.36937/ben.2020.001.001.

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DLC films have high biocompatibility. But due to low adhesion, the element must be doped. Therefore, in this study, the high biocompatibility Ta element was doped into DLC film and optimum parameters for the adhesion of Ta-DLC films were determined. The Taguchi experimental system was used to determine the optimum parameters. Ta target current, substrate bias voltage and duty cycle were selected as variable parameters. The deposition was performed with HiPIMS-CFUBMS system. Ta-DLC films were grown on Ti6Al4V substrates using Taguchi L9 34 orthogonal experimental system. The optimum deposition

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ZHANG, GANG, ZHILIANG CAO, and BING-LIN GU. "TUNNELING TRANSPORT IN STM-TIP–NANOTUBE–SUBSTRATE SYSTEMS." Modern Physics Letters B 14, no. 19 (2000): 717–24. http://dx.doi.org/10.1142/s0217984900000884.

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In this paper, we considered a single-wall carbon nanotube deposited on a substrate and probed by a scanning probe. We calculated the current and differential conductance dI/dV versus the bias voltage V in this system. We found that currents through nanotubes become saturated in high voltages. This result shows the one-dimensional characteristic of carbon nanotubes. Our results are consistent with experiments which were carried out in low bias voltage regime and can be tested easily by experiments in higher bias voltage regime.

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Hwang, Un Hak. "The Effects of Deposition Time and Surface Temperature on the TiN Films for KP-4 Steel Mold." Applied Mechanics and Materials 864 (April 2017): 89–93. http://dx.doi.org/10.4028/www.scientific.net/amm.864.89.

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In order to improve surface smoothness and increase its surface hardness of the PK-4 steel mold the dependencies of the surface temperatures of substrate, deposition times, and bias voltages applied to the substrate on the TiN film made by the physical vapor deposition were studied. Six main steps of the synthesis process were introduced to improve the robustness. Double applications of the bias voltages increased the surface hardness. The rotating substrates increased the uniformity of the films. 1000 times-magnified pictures were taken to analyze the micro-grains of TiN. SEM pictures were ta

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AMORNKITBAMRUNG, VITTAYA, THANUSIT BURINPRAKHON, and WIRAT JARERNBOON. "NANOCRYSTALLINE DIAMOND FILMS ON HIGH SPEED STEEL BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION." International Journal of Nanoscience 04, no. 02 (2005): 213–27. http://dx.doi.org/10.1142/s0219581x05003085.

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Nanocrystalline diamond films were deposited on high speed steel substrates by microwave plasma chemical vapor deposition. The best hardness improvement was about 130% of the substrate hardness, using -150 V substrate bias deposition conditions. Raman peaks of nanocrystalline diamond at 1190 cm-1 and of graphite nanoclusters at 1522 cm-1 wereobserved in this sample. Scanning electron microscope images show crystallite grains of different sizes between 25–250 nm.

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Mo, Ji Liang, Min Hao Zhu, J. An, H. Sun, Yong Xiang Leng, and Nan Huang. "Deposition of CrN Coatings by Filtered Cathodic Vacuum Arc." Key Engineering Materials 373-374 (March 2008): 130–33. http://dx.doi.org/10.4028/www.scientific.net/kem.373-374.130.

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CrN coatings were deposited on cemented carbide substrates by filtered cathodic vacuum arc technique (FCVA). The effect of different deposition parameters: nitrogen partial pressure, substrate-bias voltage and preheating of the substrate, on the structural and mechanical properties of the coating was investigated. X-ray diffraction analysis was used to determine the structure and composition of the coatings. The tribological behaviour and wear properties of the coatings against Si3N4 ball at different normal loads were studied under reciprocating sliding condition. The results showed that a sm

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Lu, Long, and Guang Guang Feng. "The Effects of Substrate Negative Bias Voltage on Morphology and Properties Base on Multi-Arc Ion Plating." Applied Mechanics and Materials 217-219 (November 2012): 1235–38. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1235.

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40Cr steel substrate was coated with Ti0.33Al0.67N films by Multi-arc ion technology. Analyses of substrate negative bias voltage on morphology thickness of the film, bonding strength and micro hardness and other properties. The substrate negative bias parameter designs within the scope of the existence of an optimal value, in order to get the optimal performance of the film.

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Klein, J. D., S. L. Clauson, and S. F. Cogan. "The influence of substrate bias on the morphology and charge capacity of rf-sputtered iridium oxide films." Journal of Materials Research 4, no. 6 (1989): 1505–10. http://dx.doi.org/10.1557/jmr.1989.1505.

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Iridium oxide films deposited on Ti-alloy stimulation electrode wires by rf sputtering exhibit markedly different surface morphologies and redox capacities in response to variations in applied substrate bias potential. Films deposited with a −20 volt bias were relatively smooth and featureless whereas those sputtered with a +20 volt bias were comprised of closely packed 1 micron long platelets. Intermediate substrate biases revealed a gradual progression from the smooth surface to one sparsely populated with particles to a morphology comprised of tightly packed platelets. The electrochemical p

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Lin, Tiegui, Langping Wang, Xiaofeng Wang, and Yufen Zhang. "Low-temperature fabrication of VO2 thin film on ITO glass with a Mott transition." Functional Materials Letters 09, no. 05 (2016): 1650062. http://dx.doi.org/10.1142/s1793604716500624.

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Polycrystalline Vanadium dioxide (VO2) thin film can be fabricated on glass substrates by high power impulse magnetron sputtering at a relative high temperature. In order to apply an effective bias voltage on substrate and control the energy of the ions impinged to the substrate, conductive indium-tin oxide (ITO) glass was used as the substrate. UV-visible-near IR transmittance spectra and X-ray diffraction (XRD) patterns of the as-deposited films exhibited that M-VO2 thin film with a metal–insulator transition temperature of 37[Formula: see text]C was fabricated successfully at 300[Formula: s

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48

Xu, Jing. "Influential Factors on Microstructure of LaB₆ Films." Applied Mechanics and Materials 385-386 (August 2013): 3–6. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.3.

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LaB6 films are deposited by magnetron sputtering deposition. ZrO2 glass is used as substrate. Bias voltage and substrate temperature are adjusted. Morphology of films that deposited at different parameters is characterized by AFM. Results of AFM shows that grains diameter on surface of LaB6 films is nanoscale, and roughness of the surface is less than 20nm. LaB6 crystallites are seen to cover substrate surface entirely. Structure of films is smooth and compactness, and there is no obviously default is found. Bias-voltage influences morphologies of films more obviously than substrate. The best

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Zhang, Min, Guo Qiang Lin, Ai Min Wu, Sheng Zhi Hao, Chuang Dong, and Li Shi Wen. "Structural and Mechanical Properties of AlN Films by Pulsed Bias Arc Ion Plating." Materials Science Forum 561-565 (October 2007): 1157–60. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1157.

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AlN thin films have been deposited on p-(100) Si and glass substrates by pulsed bias arc ion plating at different negative substrate biases. The crystal orientation, deposition rate and mechanical property of the films were investigated by X-ray diffraction, nanoindenter and UV-VIS spectrophotometer. The results reveal that pulsed bias has a large influence on film preferred orientation, deposition rate and mechanical property. A preferred (110) orientation is observed in the film deposited at a bias of -50V. With the increase of the bias, film deposition rate decreases first sharply then wild

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Wang, Mu-Chun, Zhen-Ying Hsieh, Chia-Hao Tu, et al. "Extra-Inversion Charge Enhancing Substrate Current During Increased Substrate Bias in 90 nm Process." ECS Transactions 13, no. 14 (2019): 93–100. http://dx.doi.org/10.1149/1.2998534.

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