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Journal articles on the topic 'Substrate interface'

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Published: 25 May 2024

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1

Abualigaledari, Sahar, Mehdi Salimi Jazi, and Fardad Azarmi. "Investigation on Fracture Toughness of Coating/Substrate Interface - Case Study: Thermally Sprayed Nickel Based Superalloy on Variety of Substrates." Materials Science Forum 900 (July 2017): 133–36. http://dx.doi.org/10.4028/www.scientific.net/msf.900.133.

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Nickel based superalloy materials have being extensively used in aerospace and other high tech industries. In the present work, the effect of different substrates on the mechanical properties of the coating-substrate interface has been studied. To this end, alloy 718, commercially known as Inconel 718, was deposited on alloy 718 and low carbon steel substrates using High Velocity Oxygen Fuel (HVOF) technique at the same condition. The bonding strength of the interfaces evaluated using Vickers indentation test on the coating-substrate interface. Hardness results were subjected to a valid empiri
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2

Pal, Sunil K., Youngsuk Son, Theodorian Borca-Tasciuc, et al. "Thermal and electrical transport along MWCNT arrays grown on Inconel substrates." Journal of Materials Research 23, no. 8 (2008): 2099–105. http://dx.doi.org/10.1557/jmr.2008.0256.

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This work reports on thermal and electrical conductivities and interface resistances for transport along aligned multiwalled carbon nanotubes (CNT) films grown on a nickel superalloy (Inconel) substrate. The measured specific thermal resistance of the combined Inconel–CNT and indium–CNT interfaces is of the same order as reported for CNT and silicon or SiO2 interfaces but much higher than theoretical predictions considering perfect contact between the tubes and substrate. Imperfect mechanical contact with the substrate and a large contribution caused by indium–CNT interface are thought to be m
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3

An, Bingbing. "Delamination of Stiff Films on Pressure Sensitive Ductile Substrates." International Journal of Applied Mechanics 11, no. 02 (2019): 1950014. http://dx.doi.org/10.1142/s1758825119500145.

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Stiff thin films supported by pressure sensitive ductile solids are an ubiquitous architecture appearing in a wide range of applications. The film rupture and delamination of films are important reliability issues of such an architecture. In this study, we investigate the synergistic effects of plastic deformation of substrates and fracture properties of film/substrate interface on the delamination of films. The focus of this study is on the interplay between the debonding of the interface and the plastic deformation of substrates. Finite deformation analyses are carried out for a stiff film d
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4

Wang, Yun, Shihao Wang, Zhongping Que, et al. "Manipulating Nucleation Potency of Substrates by Interfacial Segregation: An Overview." Metals 12, no. 10 (2022): 1636. http://dx.doi.org/10.3390/met12101636.

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During solidification of metallic materials, heterogeneous nucleation occurs on substrates, either endogenous or exogenous. The potency of the substrates for nucleation is mainly dependent upon the atomic arrangements on the substrate surface, which are affected by the lattice misfit between the substrate and the nucleated solid, the surface roughness at atomic scale, and the chemical interaction between the substrates and the melt. Extensive examinations on metal/substrate (M/S) interfaces at atomic scale by the state-of-the-art aberration (Cs) corrected STEM and associated EDS and EELS have
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Li, Hui Qing, Cheng Ming Li, Guang Chao Chen, Fan Xiu Lu, and Yu Mei Tong. "Analysis of Interface between Free-Standing Diamond Films and Mo Substrates." Materials Science Forum 475-479 (January 2005): 3615–18. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3615.

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Interfaces between Mo substrate and free-standing diamond films prepared by DC arc plasma jet operated at gas recycling mode were investigated, including for the first time used and multi-time used substrate. The morphology, phase composition and bonding state of elements in the interface between substrates and diamond films were examined by optical microscopy, XRD and XPS. The profiles of carbon concentration of Mo substrates were measured by GDOES. It showed that Mo2C and MoC were formed on the first time used Mo substrate, and MoC was found on diamond films nucleation side after detachment.
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6

Prasad, Beesabathina D., L. Salamanca-Riba, S. N. Mao, X. X. Xi, T. Venkatesan, and X. D. Wu. "Effect of substrate materials on laser deposited Nd1.85Ce0.15CuO4−y films." Journal of Materials Research 9, no. 6 (1994): 1376–83. http://dx.doi.org/10.1557/jmr.1994.1376.

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The growth morphology and interface structure of Nd1.85Ce0.15CuO4−y (NCCO) films grown by pulsed laser deposition on two different types of substrates, “perovskite” LaAlO3 (LAO) and SrTiO3 (STO) and “fluorite” Y2O3-stabilized ZrO2 (YSZ), were studied using cross-sectional electron microscopy. Structurally, the NCCO films are different when grown on the two types of substrates in three aspects: (i) epitaxy, (ii) substrate-film intermixing, and (iii) substrate-film interface roughness. In general, films deposited on “fluorite” substrates showed better superconducting properties than the films gr
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7

Kis-Varga, Miklos, G. A. Langer, A. Csik, Z. Erdélyi, and Dezső L. Beke. "Effect of Substrate Temperature on the Different Diffuseness of Subsequent Interfaces in Binary Multilayers." Defect and Diffusion Forum 277 (April 2008): 27–31. http://dx.doi.org/10.4028/www.scientific.net/ddf.277.27.

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Epitaxial, coherent Mo/V multilayers were deposited by magnetron sputtering on (001) oriented MgO substrates at 873K (sample MoV-T), 923K (sample MoV-U) and 973K (sample MoV-V), respectively. In order to estimate the concentration profiles in our multilayers, a superlattice refinement modelling procedure has been used on high-angle XRD symmetric scans. The Mo/V interfaces were always sharper than V/Mo ones (in this notation the order of element reflects the sequence of deposition: e.g. the Mo/V interface was formed by the deposition of the V on the Mo surface). Furthermore the interface diffus
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8

ZHAO, HONG-PING, YECHENG WANG, BING-WEI LI, and XI-QIAO FENG. "IMPROVEMENT OF THE PEELING STRENGTH OF THIN FILMS BY A BIOINSPIRED HIERARCHICAL INTERFACE." International Journal of Applied Mechanics 05, no. 02 (2013): 1350012. http://dx.doi.org/10.1142/s1758825113500129.

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The peeling behavior of a thin film bonded to a substrate is investigated by using the cohesive interface model. We compare the peeling processes of film/substrate interfaces with three different geometric shapes, including a flat interface, a curved interface of sinusoidal shape, and a wavy interface with two-level sinusoidal hierarchy. The effect of the peeling angle on the maximal peeling strength is also examined. It is demonstrated that the peeling strength can be significantly improved by introducing a hierarchical wavy morphology at the film/substrate interface. This study may be helpfu
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9

Song, Zhuguo, and Hui Li. "Plasma Spraying with Wire Feeding: A Facile Route to Enhance the Coating/Substrate Interfacial Metallurgical Bonding." Coatings 12, no. 5 (2022): 615. http://dx.doi.org/10.3390/coatings12050615.

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Thermal spray coatings are widely used in many applications, and the adhesion effect at the coating/substrate interface plays an important role during the service life. The thermal spraying coating and substrate is primarily combined by a mechanical seizure effect. In this work, a strategy to generate interfacial metallurgical bonding is proposed. Plasma spraying with wire feeding was adopted to increase the size of sprayed particles, and metallurgical bonding was clearly formed between deposited particles and the substrate (304 stainless-steel and 7075 aluminum alloy). Interface reaction can
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10

Yamagiwa, K., K. Matsumoto, and I. Hirabayashi. "Solid-phase epitaxial growth of oxide buffer materials for Rba2Cu3O7−y(R: rare earth and Y) superconductor." Journal of Materials Research 15, no. 11 (2000): 2547–57. http://dx.doi.org/10.1557/jmr.2000.0365.

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We prepared various oxide buffer films on single-crystalline oxide substrates using chemical solution deposition to investigate general interfacial problems of buffer layers for coated conductors, such as epitaxial relationships between buffer material and the substrate. We found that (i) interfaces between the films and the substrates having the same crystal structure were compatible, even in a range of misfit value up to 7%, showing in-plane alignment; however (ii) interfaces between the films and substrates of other combinations of interface structures, with and without occupying tetragonal
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11

LIANG, JIACHANG, LIPING ZHANG, ZHIPING WANG, et al. "PREPARATION OF GRADATED NANO-TRANSIENT LAYER AT INTERFACE BETWEEN DEPOSITED FILM AND SUBSTRATE BY HIGH-INTENSITY PULSED ION BEAM IRRADIATION." Surface Review and Letters 17, no. 05n06 (2010): 463–68. http://dx.doi.org/10.1142/s0218625x10014296.

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We prepared gradated nano-transient layers at different interfaces between deposited film and substrates by high-intensity pulsed ion beam (HIPIB) irradiation. The deposited film was ( Al–Si ) alloy and substrates were Ni and Ti , respectively. The gradated nano-transient layers at different interfaces were measured by Rutherford backscattering, its spectra were solved by SIMNRA code and then the microstructures of the gradated nano-transient layers at the interfaces of these two irradiated samples were obtained. The experimental results were analyzed by STEIPIB code. The formation of the grad
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12

Guo, Y. X., and Y. W. Zhao. "Effect of Interlayer on the Elastic-Plastic Deformation of Coating Systems." Journal of Mechanics 35, no. 3 (2019): 373–80. http://dx.doi.org/10.1017/jmech.2018.46.

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ABSTRACTThe finite element method (FEM) was used to study the elastic-plastic contact in the coating systems with interlayer. The results reveal that with the increase of interlayer thickness, the maximum shear stress of coating/interlayer and interlayer/substrate interfaces decreases. Moreover, the sharply changed shear stress between the interfaces of coating/interlayer and interlayer/substrate decreases too. There is no further decrease when interlayer thickness increase to 0.04 mm and above. With the increasing of interlayer elastic modulus, the shear stress of coating/interlayer interface
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13

Sasaki, Takashi, Masaaki Nakagiri, and Satoshi Irie. "Interfacial Effects on the Spherulitic Morphology of Isotactic Polystyrene Thin Films on Liquid Substrates." Advances in Materials Science and Engineering 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/4849798.

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The influence of interfaces on the morphology of flat spherulites of isotactic polystyrene (iPS) grown in thin films on liquid substrates was investigated. Amorphous iPS thin films spin-cast from a solution were annealed for cold crystallization on glycerol and silicone oil (nonsolvents for iPS). The number density of grown spherulites was revealed to be higher on the glycerol substrate than on the silicone oil substrate. This implies that the primary nucleation rate of crystallization is greater at the iPS/glycerol interface than at the iPS/silicone oil interface. The results may be consisten
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14

Goto, Toichiro, Nahoko Kasai, Rick Lu, Roxana Filip, and Koji Sumitomo. "Scanning Electron Microscopy Observation of Interface Between Single Neurons and Conductive Surfaces." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3383–87. http://dx.doi.org/10.1166/jnn.2016.12311.

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Interfaces between single neurons and conductive substrates were investigated using focused ion beam (FIB) milling and subsequent scanning electron microscopy (SEM) observation. The interfaces play an important role in controlling neuronal growth when we fabricate neuron-nanostructure integrated devices. Cross sectional images of cultivated neurons obtained with an FIB/SEM dual system show the clear affinity of the neurons for the substrates. Very few neurons attached themselves to indium tin oxide (ITO) and this repulsion yielded a wide interspace at the neuron-ITO interface. A neuron-gold in
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15

Chien, F. R., S. R. Nutt, J. M. Carulli, N. Buchan, C. P. Beetz та W. S. Yoo. "Heteroepitaxial growth of β'-SiC films on TiC substrates: Interface structures and defects". Journal of Materials Research 9, № 8 (1994): 2086–95. http://dx.doi.org/10.1557/jmr.1994.2086.

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Thin epitaxial films of β-SiC were grown by CVD on (100), (111), and (112) TiC substrates. TEM observations of the resulting interfaces revealed that island nucleation prevailed in the early stages of deposition for all three substrate orientations. Films grown on (111) and (112) TiC were monocrystalline, while SiC films deposited on (100) substrates were polycrystalline and not epitaxial, a phenomenon attributed to the poor match of atomic positions in SiC and TiC on their respective (100) planes. The (111) interface was abrupt and atomically flat, while the (112) interface exhibited {111} fa
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16

Okuno, Eiichi, Takeshi Endo, Toshio Sakakibara, Shoichi Onda, Makoto Itoh, and Tsuyoshi Uda. "Ab Initio Calculations of SiO2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face." Materials Science Forum 615-617 (March 2009): 793–96. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.793.

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Ab initio calculations were carried out to study the origin of the trap at the SiO2/SiC (MOS: Metal-Oxide-Semiconductor) interface with the three different faces of the substrate, (0001), (000-1), and (11-20). In a previous report we experimentally discovered that the (11-20) face is suitable for high channel mobility. The calculation in this report showed that the MOS interface achieved the intermediate states due to distortion and thus acted like an interface trap. The interface trap density of the MOS interface on the (11-20) face substrate was smaller than those on the other faces. The int
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17

Xu, J., M. J. Cox, and M. J. Kim. "Chemically Clean Planar Interface Synthesis: Substrate Surface and Interface Cross Section Microscopy." Microscopy and Microanalysis 3, S2 (1997): 635–36. http://dx.doi.org/10.1017/s1431927600010060.

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An ultra high vacuum (UHV) planar interface unit has been constructed to study the effect of interface/boundary structure and chemistry on properties. We report here initial observations of substrate morphology and chemistry prior to bonding and resulting interface morphology obtained using austenitic stainless steel.To synthesize chemically clean planar interfaces by diffusion bonding, the substrate must be macroscopically and microscopically flat and chemically clean. Macro-flatness, necessary for bonding to occur over large areas, was ensured by conventional mechanical polishing and lapping
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18

Jiang, Jiechao, J. He, Efstathios I. Meletis, Jian Liu, Z. Yuan, and Chong Lin Chen. "Two-Dimensional Modulated Interfacial Structures of Highly Epitaxial Ferromagnetic (La,Ca)MnO3 and Ferroelectric (Pb,Sr)TiO3 Thin Films on (001) MgO." Journal of Nano Research 3 (October 2008): 59–66. http://dx.doi.org/10.4028/www.scientific.net/jnanor.3.59.

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Two-dimensional in-plane interface structures of highly epitaxial perovskite (La,Ca)MnO3 (LCMO) and (Pb,Sr)TiO3 (PSTO) thin films on salt-rock type MgO substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LCMO and PSTO films are good single crystal quality and have atomic sharp interface with respect to the MgO substrate with -6.4% and -6.2% lattice mismatch, respectively. Electron Diffraction Patterns (EDPs) of plan-view LCMO/MgO and PSTO/MgO interfaces exhibit double diffraction spots. An analytical approach was employed using doub
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19

Josell, D., J. E. Bonevich, I. Shao, and R. C. Cammarata. "Measuring the interface stress: Silver/nickel interfaces." Journal of Materials Research 14, no. 11 (1999): 4358–65. http://dx.doi.org/10.1557/jmr.1999.0590.

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Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained usin
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20

Styler, S. A., M. E. Loiseaux, and D. J. Donaldson. "Substrate effects in the photoenhanced ozonation of pyrene." Atmospheric Chemistry and Physics Discussions 10, no. 11 (2010): 27825–52. http://dx.doi.org/10.5194/acpd-10-27825-2010.

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Abstract. We report the effects of actinic illumination on the heterogeneous ozonation kinetics of solid pyrene films and pyrene adsorbed at air-octanol and air-aqueous interfaces. Upon illumination, the ozonation of solid pyrene films and pyrene at the air-aqueous interface proceeds more quickly than in darkness; no such enhancement is observed for pyrene at the air-octanol interface. Under dark conditions, the reaction of pyrene at all three interfaces proceeds via a Langmuir-Hinshelwood-type surface mechanism. In the presence of light, Langmuir-Hinshelwood kinetics are observed for solid py
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Styler, S. A., M. E. Loiseaux, and D. J. Donaldson. "Substrate effects in the photoenhanced ozonation of pyrene." Atmospheric Chemistry and Physics 11, no. 3 (2011): 1243–53. http://dx.doi.org/10.5194/acp-11-1243-2011.

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Abstract. We report the effects of actinic illumination on the heterogeneous ozonation kinetics of solid pyrene films and pyrene adsorbed at air-octanol and air-aqueous interfaces. Upon illumination, the ozonation of solid pyrene films and pyrene at the air-aqueous interface proceeds more quickly than in darkness; no such enhancement is observed for pyrene at the air-octanol interface. Under dark conditions, the reaction of pyrene at all three interfaces proceeds via a Langmuir-Hinshelwood-type surface mechanism. In the presence of light, Langmuir-Hinshelwood kinetics are observed for solid py
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22

Mattogno, Giulia, Guido Righini, Giampiero Montesperelli, and Enrico Traversa. "X-ray photoelectron spectroscopy investigation of MgAl2O4 thin films for humidity sensors." Journal of Materials Research 9, no. 6 (1994): 1426–33. http://dx.doi.org/10.1557/jmr.1994.1426.

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MgAl2O4 thin films, to be studied as active elements for humidity sensors, were deposited on Si/SiO2 substrates by radio-frequency sputtering. This paper discusses the x-ray photoelectron spectroscopy (XPS) investigation of these films. XPS demonstrated that the thin films had a stoichiometry close to that of MgAl2O4. The evaluation of the modified Auger parameter α' for Al gave structural information about the order of the crystalline structure of the thin films. The combination of Ar+ ion etching and XPS analysis showed the simultaneous presence of Mg, Al, and Si at the film-substrate interf
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23

Goyal, D., and A. H. King. "TEM observations of the mechanism of delamination of chromium films from silicon substrates." Journal of Materials Research 7, no. 2 (1992): 359–66. http://dx.doi.org/10.1557/jmr.1992.0359.

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We have observed the complete delamination of polycrystalline chromium films from single crystal silicon substrates during deposition due to the formation of high internal stresses. These intrinsic stresses can give rise to interfacial defects which assist in the separation of the film from the substrate. Stresses in the film are balanced by stresses in the substrate, which cause mechanical failure in the substrate near the interface. Extensive arrays of dislocations and cracking of the substrate have been observed. We find that the delamination of the films from the substrate is initiated by
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24

He, Xiangjun, Si-Ze Yang, Kun Tao, and Yudian Fan. "Investigation of the interface reactions of Ti thin films with AlN substrate." Journal of Materials Research 12, no. 3 (1997): 846–51. http://dx.doi.org/10.1557/jmr.1997.0123.

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Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures
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25

Terabe, K., A. Gruverman, Y. Matsui, N. Iyi, and K. Kitamura. "Transmission electron microscopy observation and optical property of sol-gel derived LiNbO3 films." Journal of Materials Research 11, no. 12 (1996): 3152–57. http://dx.doi.org/10.1557/jmr.1996.0400.

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Crystallization behavior, defects, and interface structures of sol-gel derived LiNbO3 films on three kinds of substrates were examined. The nucleation was found to occur epitaxially at the interface between the film and the substrate. The continuous film is formed by coalescence of the island-like crystallites. When sapphire substrate is used, which has large lattice mismatch with the LiNbO3, the resulting film contains a large amount of micropores, twin structures, and misfit dislocations. On the other hand, while LiTaO3 and 5% MgO-doped LiNbO3 substrates with smaller mismatch are used as sub
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26

Hubmann, Andreas, Dominik Dietz, Joachim Brötz, and Andreas Klein. "Interface Behaviour and Work Function Modification of Self-Assembled Monolayers on Sn-Doped In2O3." Surfaces 2, no. 2 (2019): 241–56. http://dx.doi.org/10.3390/surfaces2020019.

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The modification of the work function of Sn-doped In2O3 (ITO) by vacuum adsorption of 4-(Dimethylamino)benzoic acid (4-DMABA) has been studied using in situ photoelectron spectroscopy. Adsorption of 4-DMABA is self-limited with an approximate thickness of a single monolayer. The lowest work function obtained is 2.82 ± 0.1 eV, enabling electron injection into many organic materials. In order to identify a potential influence of the ITO substrate surface on the final work function, different ITO surface orientations and treatments have been applied. Despite the expected differences in substrate
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27

Matsumae, Takashi, Hitoshi Umezawa, Yuichi Kurashima, and Hideki Takagi. "(Invited, Digital Presentation) Low-Temperature Direct Bonding of Wide-Bandgap Semiconductor Substrates." ECS Meeting Abstracts MA2023-01, no. 32 (2023): 1830. http://dx.doi.org/10.1149/ma2023-01321830mtgabs.

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Low-temperature direct bonding technique of semiconductor substrates has been developed to integrate dissimilar materials (e.g. Si, Ge, III-V) regardless of lattice and thermal expansion mismatches. Among the direct bonding techniques, a hydrophilic bonding method, which initiates a dehydration reaction between OH-terminated substrates, is commonly used because wafer-scale bonding can be fabricated under atmospheric conditions. Recently, our research group achieved direct bonding of wide-gap materials, including SiC, GaN, β-Ga2O3, and diamond substrates, by using this bonding method. The hydro
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Wang, Xi Shu, Xi Qiao Feng, and Xing Wu Guo. "Failure Behavior of Anodized Coating-Magnesium Alloy Substrate Structures." Key Engineering Materials 261-263 (April 2004): 363–68. http://dx.doi.org/10.4028/www.scientific.net/kem.261-263.363.

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This work focuses on the damage mechanisms and the resulting failure behavior of structures made of anodized coatings on magnesium alloy substrates. The failure of anodized coatings of about 30µm thickness on AZ91D substrates was investigated under three-points bending loading with online scanning electron microscope (SEM) observations. The obtained SEM images show that void nucleation and crack initiation occurs mainly at sites near the coating-substrate interface, and the evolutionary microcracking damage diffuses from the interface to the coating surface and also to the bulk substrate with
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Xie, Kuo Jun, Chang Shun Jiang, Lin Zhu, and Hai Feng Xu. "Thermal Stress Analysis of MCM Package Using Diamond Material." Key Engineering Materials 353-358 (September 2007): 2904–7. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.2904.

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With the increasing of packaging integration the power and the quantity of heat of integrate circuit will increase, it will bring more and more temperature distributions and problems about thermal stresses in package. In this paper a finite element thermal stress model of substrate-adhesive-chip is established, thermal stress distribution of substrate-chip interfaces and the affects of geometrical structure on thermal stresses are analyzed by finite element method, especially discuss interfacial thermal stresses distributions on chip-adhesive interface and adhesinve-substrate interface.
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30

Wu, X. S., and J. X. Xu. "Effect of pre-annealing of Mo foil substrate on CZTSSe thin films and Mo(S,Se)2 interface layer." Chalcogenide Letters 19, no. 9 (2022): 599–609. http://dx.doi.org/10.15251/cl.2022.199.599.

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Cu2ZnSn(S,Se)4 (CZTSSe) thin film deposited on flexible Mo foil substrate has advantage of high mass specific power and good ductility. However, a thick Mo(S,Se)2 interface layer is easily to be formed between CZTSSe and Mo foil substrate. The ohmic contact property of CZTSSe/Mo is deteriorated by the formation of Mo(S,Se)2. In this work, the Mo foil substrate was pre-annealed to inhibit the growth of Mo(S,Se)2 interface layer. CZTSSe thin films were prepared on the pre-annealed Mo foil substrate by sol-gel and selenization methods. The pre-annealing treatment of Mo foil substrate leads to the
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31

Long, Yangyang, Jens Twiefel, Joscha Roth, and Jörg Wallaschek. "Real-Time Observation of Interface Relative Motion during Ultrasonic Wedge-Wedge Bonding Process." International Symposium on Microelectronics 2015, no. 1 (2015): 000419–24. http://dx.doi.org/10.4071/isom-2015-wp35.

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As a predominant interconnection technique in microelectronic industry, ultrasonic wire bonding has been investigated for decades ever since its invention. Due to the extremely short process time, high operating frequency and ultrathin interfaces, many mechanisms are still unknown. One focus point of the research is the motion behaviors at the two interfaces – interface between wire & substrate (wire/substrate) and interface between wire & bonding tool (wire/tool). In this project, the motion behaviors at the two interfaces were observed by a high speed camera combined with an optical
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32

Liang, Lihong, Linfeng Chen, Luobing Wu, and Huifeng Tan. "Interface Strength, Damage and Fracture between Ceramic Films and Metallic Substrates." Materials 14, no. 2 (2021): 353. http://dx.doi.org/10.3390/ma14020353.

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Interface strength, damage and fracture properties between ceramic films and metallic substrates affect the service reliability of related parts. The films’ thickness, grain size and residual stress affect the interface properties and fracture behavior, thus related studies attract great attention. In this paper, the interface damage evolution and fracture behavior between ceramic films and metallic substrates were simulated by developing a three dimensional finite element model of alumina films on Ni substrates with cohesive elements in the interfaces. The interface fracture energy as a key p
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33

Wu, J. S., C. L. Jia, K. Urban, J. H. Hao, and X. X. Xi. "Misfit relaxation in SrTiO3/SrRuO3 bilayer films on LaA1O3(100) substrates." Microscopy and Microanalysis 7, S2 (2001): 1222–23. http://dx.doi.org/10.1017/s1431927600032189.

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Besides perfect dislocations, partial dislocations were proposed as effective means for misfit relaxation in the heretostructure system [1]. The microstructure of SrRuO3 films on SrTiO3 and LaA1O3 substrates have been studied. While misfit dislocations could be hardly found at the SrTiO3/SrRuO3 interface [2], high density of defects was observed in the SrRuO3/LaA1O3 interfaces [3]. in this paper, we report the high-resolution electron microscopy study of the SrTiO3/SrRuO3 bilayer films on (100) LaA1O3 substrates. The emphasis is focused on the means of misfit relaxation at the two interfaces.F
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34

Kim, M. J., R. W. Carpenter, M. J. Cox, and J. Xu. "Controlled Planar Interface Synthesis by Ultrahigh Vacuum Diffusion Bonding/deposition." Journal of Materials Research 15, no. 4 (2000): 1008–16. http://dx.doi.org/10.1557/jmr.2000.0144.

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An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 °C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a speci
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35

Bonera, Emiliano, and Alessandro Molle. "Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate." Nanomaterials 12, no. 9 (2022): 1410. http://dx.doi.org/10.3390/nano12091410.

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With black phosphorus being a promising two-dimensional layered semiconductor for application to electronics and optoelectronics, an issue remains as to how heat diffusion is managed when black phosphorus is interfaced with metals, namely in a typical device heterojunction. We use Raman spectroscopy to investigate how the laser-induced heat affects the phonon modes at the interface by comparing the experimental data with a finite element simulation based on a localized heat diffusion. The best convergence is found taking into account an effective interface thermal conductance, thus indicating
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36

Bai, Shengqiang, Fei Li, Ting Wu, Xianglin Yin, Xun Shi, and Lidong Chen. "Interface characterization of Cu–Mo coating deposited on Ti–Al alloys by arc spraying." Functional Materials Letters 08, no. 05 (2015): 1550048. http://dx.doi.org/10.1142/s1793604715500484.

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Cu – Mo pseudobinary alloys are promising candidates as electrode materials in CoSb 3-based skutterudite thermoelectric (TE) devices for TE power generation. In this study, Cu – Mo coatings were deposited onto Ti – Al substrates by applying a dual-wire electric arc spraying coating technique. The microstructure of the surfaces, cross sections and coating interfaces were analyzed by scanning electron microscopy (SEM) and energy dispersion spectrometry (EDS). Cu – Mo coatings showed a typical banded splat with compact microstructures, and have no coarse pores nor micro-cracks. The thermal shock
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37

Tauchmanová, Martina, Pavel Mokrý, Vít Kanclíř, Jan Václavík, Petra Veselá, and Karel Žídek. "Probing buried interfaces in SiOxNy thin films via ultrafast acoustics: The role transducing layer thickness." EPJ Web of Conferences 287 (2023): 05014. http://dx.doi.org/10.1051/epjconf/202328705014.

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Probing buried interfaces in thin films is a crucial task in many fields, including optical coating. Ultrafast acoustics provide a means to characterize the interfaces by using an acoustic wave localized on the nanometer scale. We provide a brief overview of our thorough study of the interface between SiOxNy thin films and Si substrate by using both single-color and broadband picosecond acoustics. The experiment allows us to track the effect of stoichiometry on the acoustics wave propagation and transition over the layer-substrate interface. To optimize the experiment, we also created simulati
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38

Ma, Kung Jeng, H. H. Chien, W. H. Chuan, Choung Lii Chao, and K. C. Hwang. "Design of Protective Coatings for Glass Lens Molding." Key Engineering Materials 364-366 (December 2007): 655–61. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.655.

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The glass molding process is considered to have a great potential for the mass production of aspherical glass lenses with high precision and low cost. However, glass molding has a serious problem of mold sticking with glass which needs to be resolved. This research investigates the interface reaction between glass and mold by high temperature wetting experiment, which provides the reference for the designing anti-stick coatings. The SUMITA K-PSK200 optical glass gobs with low Tg were used in this study. The influence of operation temperature, ambient gas, substrate materials, and thin film com
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39

Tietz, Lisa A., C. Barry Carter, Daniel K. Lathrop, Stephen E. Russek, Robert A. Buhrman, and Joseph R. Michael. "Crystallography of YBa2Cu3O6+x thin film-substrate interfaces." Journal of Materials Research 4, no. 5 (1989): 1072–81. http://dx.doi.org/10.1557/jmr.1989.1072.

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The epitactic nature of the growth of YBa2Cu3O6+x (YBCO) superconducting thin films on ceramic substrates has been studied using high-resolution electron microscopy (HREM) and selected-area diffraction (SAD) of cross-sectional specimens. The films were grown in situ on (001)-oriented MgO and (001)-oriented Y2O3-stabilized cubic ZrO2 (YSZ) single-crystal substrates by electron beam evaporation. Both of these materials have large lattice misfits with respect to YBCO. Different orientation relationships were observed for films grown on the two types of substrates. These orientation relationships
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40

Lin, Wen P., Chu-Hsuan Sha та Chin C. Lee. "40 μm Ag/Au Flip-Chip Joints by Solid-State Bonding at 200°C". Journal of Microelectronics and Electronic Packaging 10, № 3 (2013): 120–27. http://dx.doi.org/10.4071/imaps.379.

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In this research, 40 μm silver/gold (Ag/Au) composite flip-chip interconnect joints between silicon (Si) chips and copper (Cu) substrates were demonstrated. The bonding was achieved by a solid-state process at a low temperature of 200°C for 5 min with the pressure applied at 250–400 psi (1.7–2.7 MPa), corresponding to 0.22–0.35 g of force per joint. To begin with, an array of 50 × 50 30 μm Ag/10 μm Au columns with 40 μm in diameter and 100 μm in pitch was fabricated by photolitho-graphic and electroplating processes on silicon (Si) chips which were first coated with chromium (Cr) and Au films.
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41

Mao, Zhigang, Stuart McKernan, C. Barry Carte, Wei Yang, and Scott A. McPherson. "Horizontal Defects Parallel to the Interface in GaN Pyramids." Microscopy and Microanalysis 5, S2 (1999): 734–35. http://dx.doi.org/10.1017/s1431927600016998.

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The performance of III-V nitride-based microelectronic and optoelectronic devices relates directly to the micro structure of these materials. Selective lateral overgrowth has been exploited to produce GaN heteroepitaxial films with low defect density [1]. Si is a promising substrate due to its low cost, large size, and the potential for the intergration of GaN-based optoelectronic devices with Si-based electronics. It is also possible to produce high-quality GaN material for devices using lateral overgrowth on a Si substrate [2]. At present, only limited information on the defect structure in
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42

TIAN, W. J., H. Y. ZHANG, and J. C. SHEN. "SOME PROPERTIES OF INTERFACES BETWEEN METALS AND POLYMERS." Surface Review and Letters 04, no. 04 (1997): 703–8. http://dx.doi.org/10.1142/s0218625x97000705.

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We focus on the published results of the interfaces between depositing metals and insulating and semiconducting polymers, and the interfaces between polymer films and metals. They indicated that when metal was deposited on polymer films, diffusion action occurred at the polymer surface and new interfacial states were formed during the process of deposition. Chemical reactions led to good adhesion and good performance of charge transfer between metal and polymer. When polymers were deposited on metal substrates, adsorption to the substrate occurred at the interface.
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43

Guo, Hong-Li, Hai-Min Li, Xue-Dong Li, Ding-Quan Xiao, and Jian-Guo Zhu. "The Effect of Substrate Clamping on Laminated Magnetoelectric Composite." Zeitschrift für Naturforschung A 66, no. 8-9 (2011): 489–94. http://dx.doi.org/10.5560/zna.2011-0012.

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Abstract laminated composites on silicon or magnesium oxide substrates. The magnetoelectric voltage coefficient is calculated as function of interface coupling factor k, volume ratio of piezoelectrics to piezomagnetic, and volume ratio of substrates to composite. It was found that the magnetoelectric voltage coefficient decreases as the interface coupling factor k weakens, while the volume ratio of piezoelectrics to piezomagnetic vmax shifts to lead-rich compositions. The magnetoelectric voltage coefficient of laminated composites decreases sharply with increasing substrates thickness ratio, w
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44

Ramesh, R., A. Inam, D. M. Hwang, et al. "The atomic structure of growth interfaces in Y–Ba–Cu–O thin films." Journal of Materials Research 6, no. 11 (1991): 2264–71. http://dx.doi.org/10.1557/jmr.1991.2264.

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We have examined the atomic structure of growth interfaces in thin films of Y–Ba–Cu–O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTiO3, the first layer appears to be either a BaO or a CuO2 plane while on LaAlO3 the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in
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45

Isshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, and Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations." Materials Science Forum 600-603 (September 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic
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46

Bahadur, V., J. Xu, Y. Liu, and T. S. Fisher. "Thermal Resistance of Nanowire-Plane Interfaces." Journal of Heat Transfer 127, no. 6 (2005): 664–68. http://dx.doi.org/10.1115/1.1865217.

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This paper employs continuum principles combined with van der Waals theory to estimate the thermal contact resistance between nanowires and planar substrates. This resistance is modeled using elastic deformation theory and thermal resistance relations. The contact force between a nanowire and substrate is obtained through a calculation of the van der Waals interaction energy between the two. The model estimates numerical values of constriction and gap resistances for several nanowire-substrate combinations with water and air as the surrounding media. The total interface resistance is almost eq
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47

Vanfleet, R. R., M. Shverdin, Z. H. Zhu, Y. H. Lo, and J. Silcox. "Interface Voids and Precipitates in GaAs Wafer Bonding." Microscopy and Microanalysis 5, S2 (1999): 748–49. http://dx.doi.org/10.1017/s1431927600017062.

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Wafer bonding allows the production of Compliant Universal substrates that are made by bonding a thin (< 10 nm) layer twisted ∼45 degrees to the underlying substrate. Subsequent growth on this twisted layer results in defect free films even when the growth material has a significant lattice mismatch with the substrate. Defects on the bonding interface are a common observation when bonding GaAs to many substrates, but the exact nature of these defects has not been clear. We have studied this bonding layer in GaAs-GaAs twist bonded structures by Scanning Transmission Electron Microscopy and E
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48

Kawai, Kakisawa, Kubo, et al. "Crack Initiation Criteria in EBC under Thermal Stress." Coatings 9, no. 11 (2019): 697. http://dx.doi.org/10.3390/coatings9110697.

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For design of multi-layered environmental barrier coatings (EBCs), it is essential to assure mechanical reliability against interface crack initiation and propagation induced by thermal stress owing to a misfit of the coefficients of thermal expansion between the coating layers and SiC/SiC substrate. We conducted finite element method (FEM) analyses to evaluate energy release rate (ERR) for interface cracks and performed experiment to obtain interface fracture toughness to assess mechanical reliability of an EBC with a function of thermal barrier (T/EBC; SiC/SiAlON/mullite/Yb-silicate gradient
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49

Tietz, Lisa A., Scott R. Summerfelt, and C. Barry Carter. "Growth of hematite on (0001) and {1102} sapphire substrates." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 376–77. http://dx.doi.org/10.1017/s0424820100175016.

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Defects in thin films are often introduced at the substrate-film interface during the early stages of growth. The interface structures of semiconductor heterojunctions have been extensively studied because of the electrical activity of defects in these materials. Much less attention has been paid to the structure of oxide-oxide heterojunctions. In this study, the structures of the interfaces formed between hematite (α-Fe2O3) and two orientations of sapphire (α-Al2O3) are examined in relationship to the defects introduced into the hematite film. In such heterojunctions, the oxygen sublattice is
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50

Schloesser, Jana, Martin Bäker, Joachim Rösler, and Robert Pulz. "Oxidation Behavior of Thermal Barrier Coatings on Copper Substrates." Advances in Science and Technology 66 (October 2010): 74–79. http://dx.doi.org/10.4028/www.scientific.net/ast.66.74.

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In rocket engine combustion chambers, the cooling channels experience extremely high temperatures and environmental attack. Thermal protection can be provided by Thermal Barrier Coatings. Due to the need of good heat conduction, the inner combustion liner is made of copper. The performance of a standard coating system for nickel based substrates is investigated on copper substrates. Thermal cycling experiments are performed on the coated samples. Due to temperature limitations of the copper substrate material, no thermally grown oxide forms at the interface of the thermal barrier coating and t
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