Contents
Academic literature on the topic 'Subthreshold voltage-induced transferred charge'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Subthreshold voltage-induced transferred charge.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Journal articles on the topic "Subthreshold voltage-induced transferred charge"
1
Cleary, B. A., P. D. Keir, J. C. Hitt, T. K. Plant, J. F. Wager, B. Aitchison, R. T. Tuenge, and S. S. Sun. "Subthreshold voltage-induced transferred charge measurements of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices." Journal of the Society for Information Display 10, no. 3 (2002): 271. http://dx.doi.org/10.1889/1.1827879.
Full text
2
Nagaraj, Shashank, Vikram Singh, Halepoojar Siddalingappa Jayanna, Kagalagodu Manjunathiah Balakrishna, and Ramakrishna Damle. "60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs." Indian Journal of Materials Science 2013 (November 3, 2013): 1–5. http://dx.doi.org/10.1155/2013/465905.
Full textAbstract:
Total Dose Effect (TDE) on solid state devices is of serious concern as it changes the electrical properties leading to degradation of the devices and failure of the systems associated with them. Ionization caused due to TDE in commercial P-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) has been studied, where the failure mechanism is found to be mainly a result of the changes in the oxide properties and the surface effects at the channel beneath the gate oxide. The threshold voltage of the MOSFETs was found to shift from −0.69 V to −2.41 V for a total gamma dose of 1 Mrad. The net negative threshold shifts in the irradiated devices reveal the major contribution of oxide trapped charges to device degradation. The radiation induced oxide and interface charge densities were estimated through subthreshold measurements, and the trap densities were found to increase by one order in magnitude after a total gamma dose of 1 Mrad. Other parameters like transconductance, subthreshold swing, and drain saturation current are also investigated as a function of gamma dose.
3
Pejovic, Milic, Momcilo Pejovic, and Aleksandar Jaksic. "Radiation-sensitive field effect transistor response to gamma-ray irradiation." Nuclear Technology and Radiation Protection 26, no. 1 (2011): 25–31. http://dx.doi.org/10.2298/ntrp1101025p.
Full textAbstract:
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the gate bias during the irradiation of 5 V and 10 V the sensitivity of these transistors can be presented as the threshold voltage shift and the absorbed irradiation dose ratio. On the bases of the subthreshold characteristics and transfer characteristics in saturation using the midgap technique we have determined the densities of radiation induced oxide traps and interface traps responsible for the threshold voltage shift. In addition, the charge pumping technique was used to determine the energy density of true interface traps. It has been shown that radiation-induced oxide traps have dominant role on threshold voltage shift, especially for gate biases during the irradiation of 5 V and 10 V.
4
Yum, J. H., J. Oh, Todd W. Hudnall, C. W. Bielawski, G. Bersuker, and S. K. Banerjee. "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices." Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/359580.
Full textAbstract:
In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.
5
Li, Zheng, Y. G. Xiao, M. H. Tang, J. W. Chen, H. Ding, S. A. Yan, and Y. C. Zhou. "A Model of Ferroelectric Field-Effect Transistor after Ionizing Radiation." Materials Science Forum 787 (April 2014): 247–55. http://dx.doi.org/10.4028/www.scientific.net/msf.787.247.
Full textAbstract:
A theoretical model for radiation effect in a metal-ferroelectric-semiconductor (MFS) field-effect transistor was proposed by considering the fixed charges (Qfx) and interface charges (Qit) induced by ionizing radiation. In this model, the energy band-bending and surface charge in Si at a given gate bias were calculated systematically as a function of fixed charges (Qfx) and interface charges (Qit). The drain-source current (ID) was derived in an exact form without any approximation. All modeling done in this work was generalized to both n and p type Si substrates with an easy sign of the Fermi level potential in the formalism. The derived results demonstrate that the symmetry of polarization versus gate voltage curve of the MFS structure degrades when Qfx and Qit increase, which can explain the imprint behavior successfully. Additionally, the residual polarization in the ferroelectric field-effect transistor decreases with increasing Qfx and Qit, which can account for the polarization reduction. As expected, the calculated transfer characteristic of the ferroelectric FET shows that the subthreshold voltage is significantly affected by Qfx and Qit. This investigation may provide some useful insights for the space applications of ferroelectric FET’s.
6
Singh, Avtar, Chandan Kumar Pandey, Saurabh Chaudhury, and Chandan Kumar Sarkar. "Effect of strain in silicon nanotube FET devices for low power applications." European Physical Journal Applied Physics 85, no. 1 (January 2019): 10101. http://dx.doi.org/10.1051/epjap/2018180236.
Full textAbstract:
In this paper, we have presented an analysis on the performance of a strained silicon channel in silicon nanotube FET (Si-NTFET) device. Si-NTFET devices have tube-shaped channel region and because of this conduction in the channel can be controlled in two ways from outside the tube and from inside (from hollow side) the tube which results in better control over the short channel effects (SCEs). Bi-axial strain induced into the device by the inclusion of silicon-–germanium layer in between the channel. Three-dimensional simulations of the structure are carried out using ATLAS TCAD simulator and the model is calibrated with respect to previously published experimental data. The transfer characteristics, drain induced barrier lowering (DIBL), threshold voltage, Ion and Ioff, subthreshold swing of the Si-NTFET and strained Si-NTFET devices are investigated. It is seen that in strained Si-NTFET, the drive capability and inversion charge density is much higher compared to that of Si-NTFET. Evaluation of electrical performances confirms that the DIBL and other SCEs are either reduced or remains the same. However, the use of strained Si-NTFET is more suited for high speed and low power applications.
7
Kilchytska, Valeriya, Joaquin Alvarado, Otilia Militaru, Guy Berger, and Denis Flandre. "Effects of High–Energy Neutrons on Advanced SOI MOSFETs." Advanced Materials Research 276 (July 2011): 95–105. http://dx.doi.org/10.4028/www.scientific.net/amr.276.95.
Full textAbstract:
This work discusses the degradations caused by high-energy neutrons in advanced MOSFETs and compares them with damages created by γ-rays reviewing the original researches performed in our laboratory during last years [1-6]. Fully–depleted (FD) Silicon-on-Insulator (SOI) MOSFETs and Multiple-Gate (MuG) FETs with different geometries (notably gate lengths down to 50 nm) have been considered. The impact of radiation on device behavior has been addressed through the variation of threshold voltage (VT), subthreshold slope (S), transconductance maximum (Gmmax) and drain-induced barrier lowering (DIBL). First, it is shown that degradations caused by high-energy neutrons in FD SOI and MuG MOSFETs are largely similar to that caused by γ-rays with similar doses [1,3]. Second, it is revealed that, contrarily to their generally-believed immunity to irradiation [7, 8], very short-channel MuGFETs with thin gate oxide can become extremely sensitive to the total dose effect [2,3]. The possible reason is proposed. Third, a comparative investigation of high-energy neutrons effects on strained and non-strained devices demonstrates a clear difference in their response to high-energy neutrons exposure [6]. Finally, based on simulations and modeling of partially –depleted (PD) SOI CMOS D Flip-Flop, we show how radiation-induced oxide charge and interface states build-up can affect well-known tolerance of SOI devices to transient effects [4,5].
8
Medler, Kathryn, and Evanna L. Gleason. "Mitochondrial Ca2+ Buffering Regulates Synaptic Transmission Between Retinal Amacrine Cells." Journal of Neurophysiology 87, no. 3 (March 1, 2002): 1426–39. http://dx.doi.org/10.1152/jn.00627.2001.
Full textAbstract:
The diverse functions of retinal amacrine cells are reliant on the physiological properties of their synapses. Here we examine the role of mitochondria as Ca2+ buffering organelles in synaptic transmission between GABAergic amacrine cells. We used the protonophore p-trifluoromethoxy-phenylhydrazone (FCCP) to dissipate the membrane potential across the inner mitochondrial membrane that normally sustains the activity of the mitochondrial Ca2+ uniporter. Measurements of cytosolic Ca2+ levels reveal that prolonged depolarization-induced Ca2+ elevations measured at the cell body are altered by inhibition of mitochondrial Ca2+ uptake. Furthermore, an analysis of the ratio of Ca2+ efflux on the plasma membrane Na-Ca exchanger to influx through Ca2+ channels during voltage steps indicates that mitochondria can also buffer Ca2+ loads induced by relatively brief stimuli. Importantly, we also demonstrate that mitochondrial Ca2+ uptake operates at rest to help maintain low cytosolic Ca2+ levels. This aspect of mitochondrial Ca2+ buffering suggests that in amacrine cells, the normal function of Ca2+-dependent mechanisms would be contingent upon ongoing mitochondrial Ca2+ uptake. To test the role of mitochondrial Ca2+ buffering at amacrine cell synapses, we record from amacrine cells receiving GABAergic synaptic input. The Ca2+ elevations produced by inhibition of mitochondrial Ca2+uptake are localized and sufficient in magnitude to stimulate exocytosis, indicating that mitochondria help to maintain low levels of exocytosis at rest. However, we found that inhibition of mitochondrial Ca2+ uptake during evoked synaptic transmission results in a reduction in the charge transferred at the synapse. Recordings from isolated amacrine cells reveal that this is most likely due to the increase in the inactivation of presynaptic Ca2+ channels observed in the absence of mitochondrial Ca2+ buffering. These results demonstrate that mitochondrial Ca2+ buffering plays a critical role in the function of amacrine cell synapses.
9
Cross, R. B. M., and M. M. De Souza. "The Impact of Fermi Pinning on Thermal Properties of the Instabilities in ZnO TFTs." MRS Proceedings 957 (2006). http://dx.doi.org/10.1557/proc-0957-k10-44.
Full textAbstract:
ABSTRACTIn this paper we describe gate bias and temperature induced device instabilities of inverted-staggered ZnO-TFTs. It is shown that low positive and negative gate bias results in the transfer characteristics shifting in a positive and negative direction respectively. It is suggested that this is a consequence of temporary charge trapping at or close to the channel/insulator interface. The degradation of device parameters such as the threshold voltage, subthreshold slope and effective channel mobility is demonstrated at elevated measurement temperatures, suggesting the generation of defects and/or trap states in the interfacial region. In addition, it is postulated from the extracted activation energy of the drain current that the Fermi-level is pinned during the operation of the devices due to the high level of states close to the conduction band edge. These results highlight the relatively ease with which defects could be created at the interface, indicating a high concentration of weak or strained bonds. Both charge trapping and defect creation-induced instabilities appear to be reversible, as all devices regain their original characteristics after a period of relaxation at room temperature.
10
Tiwale, Nikhil, Ashwanth Subramanian, Zhongwei Dai, Sayantani Sikder, Jerzy T. Sadowski, and Chang-Yong Nam. "Large mobility modulation in ultrathin amorphous titanium oxide transistors." Communications Materials 1, no. 1 (December 2020). http://dx.doi.org/10.1038/s43246-020-00096-w.
Full textAbstract:
AbstractRecently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra-sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick TiOx-based ultrathin TFTs exhibiting on-off ratio of ~106, predominantly driven by ~6-decade gate-induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices.
Dissertations / Theses on the topic "Subthreshold voltage-induced transferred charge"
1
Ahmed, Mustafa M. Abdalla. "Alternating-Current Thin-Film Electroluminescent Device Characterization." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.
Full textAbstract:
Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.