Academic literature on the topic 'Superlattices'

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Journal articles on the topic "Superlattices"

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Nasiri, Milad, and Yan Wang. "Evolution of Phonon Spectral Energy Density in Superlattice Structures." Crystals 15, no. 5 (2025): 446. https://doi.org/10.3390/cryst15050446.

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Superlattices are a distinctive class of artificial nanostructures formed by the periodic stacking of two or more materials. The high density of interfaces in these structures often gives rise to exotic physical properties. In the context of thermal transport, it is well established that such interfaces can significantly scatter particle-like phonons while also inducing constructive or destructive interference in wave-like phonons, depending on the relationship between the phonons’ coherence lengths and the superlattice’s period thickness. In this work, we systematically investigate the effect
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Fullerton, Eric E., Ivan K. Schuller, and Y. Bruynseraede. "Quantitative X-Ray Diffraction From Superlattices." MRS Bulletin 17, no. 12 (1992): 33–38. http://dx.doi.org/10.1557/s0883769400046935.

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The physical properties of superlattices have been the subject of considerable interest because a wide range of phenomena associated with very thin films, interfaces, and coupling effects can be studied. Recent areas of activity in metallic superlattices include antiferromagnetic coupling of ferromagnetic layers across nonmagnetic spacer layers, giant magnetoresistance, magnetic surface anisotropy, low-dimensional superconductivity, and anomalous mechanical properties. All of these phenomena are strongly affected by the chemical and physical properties of the individual layers and by the super
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Hansen, Monica, Amber C. Abare, Peter Kozodoy, et al. "Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 14–19. http://dx.doi.org/10.1557/s1092578300004026.

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AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer super
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Weng, Hsu Kai, Akira Nagakubo, Hideyuki Watanabe, and Hirotsugu Ogi. "Lattice thermal conductivity in isotope diamond asymmetric superlattices." Japanese Journal of Applied Physics 61, SG (2022): SG1004. http://dx.doi.org/10.35848/1347-4065/ac4304.

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Abstract We study the lattice thermal conductivity of isotope diamond superlattices consisting of 12C and 13C diamond layers at various superlattice periods. It is found that the thermal conductivity of a superlattice is significantly deduced from that of pure diamond because of the reduction of the phonon group velocity near the folded Brillouin zone. The results show that asymmetric superlattices with a different number of layers of 12C and 13C diamonds exhibit higher thermal conductivity than symmetric superlattices even with the same superlattice period, and we find that this can be explai
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Antropov, N. О., and Е. А. Kravtsov. "Neutron Reflectometry in Superlattices with Strongly Absorbing Rare-Earth Metals (Gd, Dy)." Поверхность. Рентгеновские, синхротронные и нейтронные исследования, no. 8 (August 1, 2023): 11–15. http://dx.doi.org/10.31857/s1028096023070038.

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Polarized neutron reflectometry was used to study Dy/Gd superlattices with different ratios of Dy and Gd layer thicknesses: 1 : 1, 2 : 1, 3 : 1. It has been experimentally shown that the formation of helical magnetic ordering in Dy layers with a period incommensurate with the period of the superlattice appears as a magnetic superlattice reflection, which is forbidden for structural reasons at a ratio of the thicknesses of the Dy and Gd layers 1 : 1. Otherwise, the formation of helical magnetic ordering has little effect on the shape of the neutron reflectometry curves. Thus, the optimization o
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Liu, Yang, Xue Yang, Xiaowei Zhou, et al. "Design and Growth of P-Type AlGaN Graded Composition Superlattice." Micromachines 15, no. 12 (2024): 1420. http://dx.doi.org/10.3390/mi15121420.

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A graded composition superlattice structure is proposed by combining simulation with experimentation. The structural factors affecting graded symmetric superlattices and graded asymmetric superlattices and their action modes are simulated and analyzed. A Mg-doped graded symmetric superlattice structure with high Al content, excellent structural quality, good surface morphology and excellent electrical properties was grown by MOCVD equipment. The AlxGa1−xN superlattice with Al composition of 0.7 in the barrier exhibits a hole concentration of approximately 5 × 1015 cm−3 and a resistivity of 66
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Yu, Yixuan, Avni Jain, Adrien Guillaussier, et al. "Nanocrystal superlattices that exhibit improved order on heating: an example of inverse melting?" Faraday Discussions 181 (2015): 181–92. http://dx.doi.org/10.1039/c5fd00006h.

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Grazing incidence small angle X-ray scattering (GISAXS) measurements reveal that superlattices of 1.7 nm diameter, gold (Au) nanocrystals capped with octadecanethiol become significantly more ordered when heated to moderate temperatures (50–60 °C). This enhancement in order is reversible and the superlattice returns to its initially disordered structure when cooled back to room temperature. Disorder–order transition temperatures were estimated from the GISAXS data using the Hansen–Verlet criterion. Differential scanning calorimetry (DSC) measurements of the superlattices exhibited exotherms (a
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Kabalan, Amal A., and Pritpal Singh. "CdTe/PbTe Superlattice Modeling and Fabrication for Solar Cells Applications." Journal of Nano Research 48 (July 2017): 125–37. http://dx.doi.org/10.4028/www.scientific.net/jnanor.48.125.

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Tuning the bandgap of superlattice structures creates devices with unique optical, electronic and mechanical properties. Designing solar cells with superlattice structures increases the range of light energy absorbed from the solar spectrum in the device. A superlattice is a nanostructure composed of alternating thin layers of two materials. The thickness of the constituent materials alters the optical bandgap of the superlattice. This paper discusses a mathematical model which computes the effective bandgap of a CdTe/PbTe superlattice based on a given thickness of the CdTe and PbTe films. The
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Islam, Md Tanvirul, Xinkang Chen, Tedi Kujofsa, and John E. Ayers. "Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices." International Journal of High Speed Electronics and Systems 27, no. 01n02 (2018): 1840009. http://dx.doi.org/10.1142/s0129156418400098.

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Chirped superlattices are of interest as buffer layers in metamorphic semiconductor device structures, because they can combine the mismatch accommodating properties of compositionally-graded layers with the dislocation filtering properties of superlattices. Important practical aspects of the chirped superlattice as a buffer layer are the surface strain and surface in-plane lattice constant. In this work two basic types of InGaAs/GaAs chirped superlattice buffers have been studied. In design I (composition modulated), the average composition is varied by modulating the composition of one of th
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Zhao, Lu, Lijuan Zhang, Houfu Song, et al. "Incoherent phonon transport dominates heat conduction across van der Waals superlattices." Applied Physics Letters 121, no. 2 (2022): 022201. http://dx.doi.org/10.1063/5.0096861.

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Heat conduction mechanisms in superlattices could be different across different types of interfaces. Van der Waals superlattices are structures physically assembled through weak van der Waals interactions by design and may host properties beyond the traditional superlattices limited by lattice matching and processing compatibility, offering a different type of interface. In this work, natural van der Waals (SnS)1.17(NbS2)n superlattices are synthesized, and their thermal conductivities are measured by time-domain thermoreflectance as a function of interface density. Our results show that heat
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Dissertations / Theses on the topic "Superlattices"

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Deans, Mark Edward. "Phonons in superlattices." Thesis, University of Cambridge, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.254406.

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Hadizad, M. Reza. "Lattice dynamics of superlattices." Thesis, University of Essex, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292758.

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Rajakarunanayake, Yasantha Nirmal McGill T. C. McGill T. C. "Optical properties of Si-Ge superlattices and wide band gap II-VI superlattices /." Diss., Pasadena, Calif. : California Institute of Technology, 1991. http://resolver.caltech.edu/CaltechETD:etd-07122007-074702.

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Müggenburg, Jan. "Ion beam analysis of metallic vanadium superlattices : Ion beam analysis of metallic vanadium superlattices." Thesis, Uppsala universitet, Tillämpad kärnfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-328067.

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Evans, S. D. "Langmuir-Blodgett superlattices incorporating porphyrins." Thesis, Lancaster University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235169.

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Pulsford, Nicolas J. "Optical studies of semicondutor superlattices." Thesis, University of Oxford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.257905.

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Chen, Peixuan. "Thermal transport through SiGe superlattices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-159170.

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Understanding thermal transport in nanoscale is important for developing nanostructured thermolelectric materials and for heat management in nanoelectronic devices. This dissertation is devoted to understand thermal transport through SiGe based superlattices. First, we systematically studied the cross-plane thermal conductivity of SiGe superlattices by varying the thickness of Si(Ge) spacers thickness. The observed additive character of thermal resistance of the SiGe nanodot/planar layers allows us to engineer the thermal conductivity by varying the interface distance down to ~1.5 nm. Si-Ge in
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Chen, Peixuan. "Thermal transport through SiGe superlattices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20177.

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Understanding thermal transport in nanoscale is important for developing nanostructured thermolelectric materials and for heat management in nanoelectronic devices. This dissertation is devoted to understand thermal transport through SiGe based superlattices. First, we systematically studied the cross-plane thermal conductivity of SiGe superlattices by varying the thickness of Si(Ge) spacers thickness. The observed additive character of thermal resistance of the SiGe nanodot/planar layers allows us to engineer the thermal conductivity by varying the interface distance down to ~1.5 nm. Si-Ge in
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BELL, JOHN A. "BRILLOUIN SCATTERING FROM METAL SUPERLATTICES." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184045.

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Acoustic modes guided by thin-film metal superlattices have been investigated using Brillouin spectroscopy. Samples were grown on both single-crystal sapphire and fused silica substrates by alternately sputtering two different metals to yield a total thickness in the range 0.3 - 0.5 μm. Structural and chemical characterization of the polycrystalline films was performed using x-ray diffraction. Rutherford backscattering and optical interferometry. Thermally excited acoustic waves in the metal film create a surface ripple which weakly interacts with light incident from a single mode argon laser.
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Boufelfel, Ahmed. "Iron-based magnetic metallic superlattices." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184340.

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For the first time we prepared and investigated the structural, magnetic, and electrical transport properties of Fe/W, Fe/Mo, and Fe/Pd metallic superlattices. We made a theoretical attempt to explain the induced increase or decrease of the magnetization at the magnetic superlattice interfaces. We used several x-ray diffraction techniques to determine the structural properties of our superlattices. Mossbauer spectroscopy and neutron scattering were used to determine the induced microscopic magnetic effects due to the superlattice structure. Brillouin scattering spectroscopy was used to determi
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Books on the topic "Superlattices"

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Allan, Guy, Michel Lannoo, Gérald Bastard, Michel Voos, and Nino Boccara, eds. Heterojunctions and Semiconductor Superlattices. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71010-0.

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Ivchenko, Eougenious L., and Grigory Pikus. Superlattices and Other Heterostructures. Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-97589-9.

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Ivchenko, Eougenious L., and Grigory E. Pikus. Superlattices and Other Heterostructures. Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60650-2.

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NATO, Advanced Study Institute on Interfaces Quantum Wells and Superlattices (1987 Banff Alta ). Interfaces, quantum wells, and superlattices. Plenum Press, 1988.

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Leavens, C. Richard, and Roger Taylor, eds. Interfaces, Quantum Wells, and Superlattices. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1045-7.

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M, Biefeld Robert, ed. Compound semiconductor strained-layer superlattices. Trans Tech Publications, 1989.

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1938-, Shinjo Teruya, and Takada Toshio 1922-, eds. Metallic superlattices: Artificially structured materials. Elsevier, 1987.

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Roger, Taylor, ed. Interfaces, Quantum Wells, and Superlattices. Springer US, 1988.

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Summers, Christopher J. Infrared power cells for satellite power conversion: Final report. National Aeronautics and Space Administration, Lewis Research Center, 1991.

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Leo, Karl. High-Field Transport in Semiconductor Superlattices. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/b13579.

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Book chapters on the topic "Superlattices"

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Fewster, Paul F. "Superlattices." In X-Ray and Neutron Dynamical Diffraction. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4615-5879-8_20.

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Hess, Karl. "Superlattices." In The Physics of Submicron Semiconductor Devices. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-2382-0_10.

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Ploog, Klaus. "Doping Superlattices." In Molecular Beam Epitaxy and Heterostructures. Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5073-3_15.

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Esaki, Leo. "Compositional Superlattices." In The Technology and Physics of Molecular Beam Epitaxy. Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_6.

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Döhler, Gottfried H. "Doping Superlattices." In The Technology and Physics of Molecular Beam Epitaxy. Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_8.

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Kerkmann, D., and D. Pescia. "Metallic Superlattices." In Physics of Low-Dimensional Semiconductor Structures. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-2415-5_11.

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Leo, Karl. "Semiconductor Superlattices." In Springer Tracts in Modern Physics. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-36471-9_2.

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Maan, J. C. "Doping Superlattices." In Heterojunctions and Semiconductor Superlattices. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71010-0_11.

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Marzin, J. Y. "Strained Superlattices." In Heterojunctions and Semiconductor Superlattices. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71010-0_13.

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Sasaki, Akio. "Disordered Superlattices." In Frontiers in Nanoscale Science of Micron/Submicron Devices. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_36.

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Conference papers on the topic "Superlattices"

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Bon-Mardion, Charles, Edouard Deschaseaux, Thierry Farjot, et al. "Superconducting Superlattices for Cryogenic Systems." In 2024 IEEE 10th Electronics System-Integration Technology Conference (ESTC). IEEE, 2024. http://dx.doi.org/10.1109/estc60143.2024.10712114.

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Zavada, J. M., H. A. Jenkinson, and G. K. Hubler. "Optical index of gallium arsenide-aluminum arsenide superlattices in the near infrared." In OSA Annual Meeting. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.ws2.

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The synthesis of high quality gallium arsenide–aluminum arsenide (GaAs–AlAs) superlattices has initiated a new class of optical materials with important consequences in the area of optoelectronics. For many applications it will be necessary to accurately characterize the optical properties of these materials in frequency regions of interest. In the present investigation, infrared reflectance spectroscopy is used to determine the optical indices of several GaAs–AlAs superlattice films in the near-infrared region (4000–10,000 cm−1). Each of the superlattices under study had an average aluminum m
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Simpson, T. B., R. P. Leavitt, G. J. Simonis, J. J. Winter, J. E. Anthony, and T. R. AuCoin. "Laser-modulated transmission in GaAs doping superlattices." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr1.

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The doping superlattice1 consists of thin alternating layers of n- and p-doped semiconducting material. The electric field induced by carrier migration leads to band bending and to an indirect band gap in real space. The energy of this indirect band gap can be tuned by creating electron–hole pairs by means of laser excitation, thus changing the transmission, reflection, and photoluminescent properties of the superlattice. GaAs doping superlattices having various layer thicknesses and dopant levels were grown by means of molecular beam epitaxy. Optical properties of the samples were measured at
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Choquette, Kent D., and Leon Mccaughan. "Nonresonant optical nonlinearity in short-period GaAs doping superlattices." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.tuy2.

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In a semiconductor doping or n-i-p-i superlattice, the periodic variation of impurities introduces a space-charge-induced superlattice potential which modifies the bulk electronic band structure and allows tailoring of the optical properties. We propose that short-period doping superlattices are suitable for the enhancement of a third- order optical susceptibility arising from electrons in nonparabolic conduction subbands. The advantages of doping superlattices are the ability to simply engineer the superlattice potential profile, thus giving control of miniband dispersion, and to provide free
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Borca-Tasciuc, Theodorian, Jianlin Liu, Taofang Zeng, et al. "Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices." In ASME 1999 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1999. http://dx.doi.org/10.1115/imece1999-1069.

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Abstract Experimental evidence for a significant thermal conductivity reduction has been reported in recent years for GaAs/AlAs, Si/Ge, and Bi2Te3/Sb2Te3 superlattices. Previously reported experimental studies on Si/Ge superlattices are based on samples grown by metal oxide chemical vapor deposition (MOCVD) on GaAs substrates with Ge buffers. In this work, we present experimental results on the temperature dependent thermal conductivity of symmetrically strained Si/Ge superlattices grown by molecular beam epitaxy (MBE) as a function of the superlattice period and the growth temperature. Therma
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Choquette, Kent D., Leon McCaughan, J. E. Potts, D. K. Misemer, G. Haugen, and G. D. Vernstrom. "Tunable photoluminescence of uniformly doped short-period GaAs doping superlattices." In Integrated Photonics Research. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/ipr.1990.mb4.

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Doping or n-i-p-i superlattices are promising materials for tunable light sources. Long-period GaAs doping superlattices have exhibited wide tunability in the photoluminescence (PL) peak energy versus excitation intensity,1 but photopumped lasing has been observed only at high excitation, where excess carriers completely screen the superlattice space-charge potential.2 By contrast, short-period superlattices possess a smaller degree of luminescence tunability yet exhibit larger oscillator strengths because of the greater overlap between electron and hole wave functions in the n- and p-type lay
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McGill, T. C. "HgTe-CdTe superlattice infrared detectors." In OSA Annual Meeting. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.tub1.

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A great deal of interest has developed in the use of superlattices as infrared materials. The infrared superlattice to be discussed is the one formed by laying down repeatedly a layer of Hg x 1Cd1- x 1 Te followed by a layer of Hg x 2Cd1- x 2 Te with x1 ≠ x2. To date, most of the research has been for the case when x1 = 1 and x2 = 0. The theoretical studies have indicated that superlattices could provide an interesting solution to a number of problems that exist with the alloy materials. For example, the band gap of the superlattice is adjusted by adjusting the thickness of the HgTe and CdTe l
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Huxtable, Scott T., Alexis R. Abramson, Arun Majumdar, et al. "Thermal Conductivity of Si/SiGe Superlattices." In ASME 2001 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/imece2001/htd-24397.

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Abstract The cross-plane and in-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattice structures with periods from 45 Å to 300 Å are experimentally investigated using the 3-ω measurement technique. The experiment is conducted over a temperature range from 70 to 340 K. Results indicate that the cross-plane thermal conductivity decreases with decreasing period thickness (i.e. increasing number of interfaces per unit length). The superlattice with the shortest period exhibits a cross-plane thermal conductivity similar to that of a SiGe alloy. The in-plane thermal conductivity follows a si
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Wu, Shih-Kuo, and Ya-Wen Chou. "Modeling of Heat Transfer in Nanoscale Multilayer Solid-State Structures." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52224.

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Modeling of heat transfer in nanoscale multilayer solid-state structures is presented in this article to seek a potential design of thermoelectric materials. The phonon radiative heat conduction equation is used to describe the heat transport behavior in nanoscale multilayer solid-state structures and the diffuse mismatch model is utilized to simulate the interface condition between two dissimilar materials. In this paper, the thermal conductivity of thin film superlattices, nano wire superlattices and nano tube superlattices were calculated. Then, size effects on the performance of thermoelec
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Song, J. J., P. S. Jung, Y. S. Yoon, C. W. Tu, T. Vreeland, and S. Nieh. "Excitons in GaAs/(Al,Ga)As superlattices with coupled wells." In OSA Annual Meeting. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.fr4.

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Various new electrooptic device concepts have recently been proposed which utilize the electronic energy band structures in semiconductor superlattices. The energy bands and excitons in superlattices have not received as much attention as those in quantum wells. A series of high-quality GaAs/(Al, Ga)As superlattice samples have been fabricated to have varying barrier widths using MBE. These samples have been analyzed by transmission electron microscopy to determine the layer thicknesses. Excitation spectroscopy at 5 K was employed to study the energy subband and exciton structures in superlatt
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Reports on the topic "Superlattices"

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Camley, R. E. Magnetic Superlattices. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada191450.

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Tsui, D. C. Electron Transport in Heterojunction Superlattices. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada212366.

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Thomas, John E. Fermi Gases in Bichromatic Superlattices. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1573239.

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Li, S., J. A. Eastman, J. Vetrone, R. E. Newnham, and L. E. Cross. Coherent coupling in ferroelectric superlattices. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/286271.

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Schuller, I. K. Preparation and characterization of superlattices. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/5430644.

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Rochansky, A. Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/826800.

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te Velthuis, S. G. E., A. Hoffmann, and J. Santamaria. Magnetic profiles in ferromagnetic/superconducting superlattices. Office of Scientific and Technical Information (OSTI), 2007. http://dx.doi.org/10.2172/947081.

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Razeghi, Manijeh. GaAs-GaInP Superlattices for Intersubband Photodetection. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada353981.

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Fullerton, E. E., J. E. Matson, C. H. Sowers, and S. D. Bader. Antiferromagnetic interlayer coupling of Ni/Mo superlattices. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10194947.

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CA Wand, CJ Vineis, and DR Calawa. Self-Organized Vertical Superlattices in Epitaxial GaInAsSb. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/824866.

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