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Journal articles on the topic 'Switch pin'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Hou, Wang, Tang, and Zhang. "Design of a RF Switch Used in Redundant Atomic Clock Configurations." Sensors 19, no. 10 (May 20, 2019): 2331. http://dx.doi.org/10.3390/s19102331.

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Atomic clocks provide frequency reference signals for communication, aerospace, satellite navigation and other systems. The redundant configuration of atomic clocks is necessary for ensuring the continuity and stability of the system. A radio frequency (RF) switch is usually used as a switching device in the switching system of the host atomic clock and the backup atomic clock. When the atomic clock fails, the switching between the host and the backup clock can be carried out quickly. Aiming at the fast switching requirements of atomic clock RF signals, this paper proposes a new series-shunt Positive Intrinsic Negative (PIN) switch design. In this paper, the evaluation of the RF switches is conducted by using the metrics of switching speed, insertion loss, isolation, return loss at on state and return loss at off state. Experimental result shows that the new PIN switch has better and more comprehensive performance metrics than the electromechanical switch, FET switch and conventional PIN switch. In particular, the switching speed is 53 ns faster than the conventional series-shunt PIN switch.

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2

Usanov, D. A., A. V. Skripal, and M. Yu Kulikov. "Microstrip PIN diode microwave switch." Radioelectronics and Communications Systems 54, no. 4 (April 2011): 216–18. http://dx.doi.org/10.3103/s0735272711040078.

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3

Thomas, L., A. Hing, E. Hughes, J. Beckerson, and K. Wilson. "GaAs MMIC broadband SPDT PIN switch." Electronics Letters 22, no. 22 (1986): 1183. http://dx.doi.org/10.1049/el:19860811.

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4

NURMANTRIS, DWI ANDI, HEROE WIJANTO, and BAMBANG SETIA NUGROHO. "Pattern Reconfigurable Patch Antenna menggunakan Edge Shorting Pin dan Symmetrical Control Pin." ELKOMIKA: Jurnal Teknik Energi Elektrik, Teknik Telekomunikasi, & Teknik Elektronika 3, no. 2 (July 1, 2015): 177. http://dx.doi.org/10.26760/elkomika.v3i2.177.

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ABSTRAKMetode baru dalam mendesain suatu pattern reconfigurable antenna telah diteliti. Penelitian ini fokus pada optimasi antena patch lingkaran single layer pencatuan probe koaksial dengan mengintegrasikan 24 switch/shorting pin pada sisi patch yang disebut edge shorting pin dan 8 shorting pin membentuk lingkaran dengan radius tertentu dan selanjutnya disebut symmetrical control pin yang fungsinya sebagai metode penyepadan impedansi. Algoritma Genetika yang dikombinasikan dengan Finite Element Software digunakan untuk mengoptimasi kombinasi switch, radius lingkaran symmetrical control pin, dan radius patch untuk mendapatkan kemampuan pattern reconfigurability. Antena ini menghasilkan 8 kemungkinan arah radiasi azzimuth dengan resolusi 45o dan arah elevasi 30o pada frekuensi 2,4 Ghz. Optimasi, simulasi, fabrikasi, dan pengukuran dilakukan untuk memverifikasi hasil penelitian.Kata kunci: Patch Lingkaran, Edge Shorting Pin, Symmetrical Control Pin, Algoritma Genetika, Pattern Reconfigurable ABSTRACTNew method for desaining pattern reconfigurable antenna was studied. This study focuses on the optimization of a single layer circular patch antenna with probe feed by integrating the 24 switch / shorting pin on the side of the patch that called Edge Shorting Pins and 8 shorting pins form circular line in such radius that called Symmetrical Control Pins as a impedance matching method. Genetic algorithm combined with the Finite Element Software is used to optimize the switch combination, the radius of circular line of symmetrical control pins, and the patch radius to obtain a pattern reconfigurability capabilities. This antenna produces 8 possible directions of azimuth radiation with a resolution of 45o and 30o elevation direction at a frequency of 2.4 GHz. Optimization, simulation, fabrication, and measurement was done to verify the results.Keywords: Circular Patch, Edge Shorting Pin, Symmetrical Control Pin, Genetic Algorithm, Pattern Reconfigurable

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5

Jiang, Yun, Yuan Ye, Daotong Li, Zhaoyu Huang, Chao Wang, Jingjian Huang, and Naichang Yuan. "Design of W-band PIN Diode SPDT Switch with Low Loss." Applied Computational Electromagnetics Society 36, no. 7 (August 19, 2021): 901–7. http://dx.doi.org/10.47037/2021.aces.j.360712.

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A W-band PIN diode single pole double throw (SPDT) switch with low insertion loss (IL) was successfully developed using a hybrid integration circuit (HIC) of microstrip and coplanar waveguide (CPW) in this paper. In order to achieve low loss of the SPDT switch, the beam-lead PIN diode 3D simulation model was accurately established in Ansys High Frequency Structure Simulator (HFSS) and the W-band H-plane waveguide-microstrip transition was realized based on the principle of the magnetic field coupling. The key of the proposed method is to design the H-plane waveguide-microstrip transition, it not only realizes the low IL of the SPDT switch, but also the direct current (DC) bias of the PIN diode can be better grounded. In order to validate the proposed design method, a W-band PIN diode SPDT switch is fabricated and measured. The measurement results show that the IL of the SPDT switch is less than 2 dB in the frequency range of 85 to 95 GHz, while the isolation of the SPDT switch is greater than 15 dB in the frequency range of 89.5 to 94 GHz. In the frequency range of 92 to 93 GHz, the IL of the SPDT switch is less than 1.65 dB, and its isolation is higher than 22 dB. Switch rise time and switch fall time of the SPDT switch are smaller than 29ns and 19ns, respectively. Good agreement between the simulations and measurements validates the design method.

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6

Edward, N., N. A. Shairi, A. Othman, Z. Zakaria, and I. D. Saiful Bahri. "Reconfigurable modified wilkinson power divider using PIN diode switch." Bulletin of Electrical Engineering and Informatics 9, no. 3 (June 1, 2020): 1067–73. http://dx.doi.org/10.11591/eei.v9i3.2174.

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In this paper, a reconfigurable modified Wilkinson Power Divider (WPD) was proposed. The operating frequencies of the proposed design were either at 2.5 GHz or 3.5 GHz for Worldwide Interoperability for Microwave Access (WiMAX) applications. This proposed design is reconfigurable in terms of its operating frequency by using PIN diode switches. PIN diode switch was used in this design to reconfigure the microstrip line length. By varying the bias voltage of the PIN diode to +5 V or -5 V, the proposed modified WPD can either operate at 2.5 GHz or 3.5 GHz. Rogers RO4350 (er=3.48, h=0.508 mm) was chosen as the substrate material and copper (thickness=0.035 mm) related to patch of design. Based on simulation results obtained from the Advanced Design System (ADS) software, the modified WPD shows good S-parameter performances at 2.5 GHz and 3.5 GHz. However, the measurement results exhibit frequency shifted. Even though there is a correlation between measurement results and simulation results, the resonant frequency was shifted due to parasitic reactance of the PIN diode.

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7

T R, Nischith, Namita Palecha, and John Alwyn. "Novel Approach to Measure Internal Power Domain PG Route Weakness." Journal of University of Shanghai for Science and Technology 23, no. 05 (June 17, 2021): 704–8. http://dx.doi.org/10.51201/jusst/21/05339.

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Grid weakness measurement is an extremely important process in the modern-day VLSI design flow. In designs that contain power gating switches, there are additional challenges. It is desirable to find the PG grid weakness of only the gated domain. The tools used in the industry typically measure the total voltage drops from the bump location to the transistor pin. This voltage drop is the summation of the voltage drops in the external domain, switch pin network, and internal domain. This paper explores the ways to measure the internal pin domain voltage exclusively. Ansys Totem tool is used for simulation. Finally, the simulation results are presented to propose the effectiveness and accuracy of the given solution.

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8

Wu, Wei, Yun-Bo Li, Rui-Yuan Wu, Chuan-Bo Shi, and Tie-Jun Cui. "Band-Notched UWB Antenna with Switchable and Tunable Performance." International Journal of Antennas and Propagation 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/9612987.

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A band-notched UWB antenna is presented, which can switch between two notch bands and tune the central frequency simultaneously. It is the first time that the switchable and tunable behaviours are combined together in band-notched UWB antennas. In the band-notched structure, PIN diodes are used to switch the lower and upper frequency bands, while varactors could vary the central frequency of each notch band continuously. Measurement results show that the notch bands could switch between 4.2 GHz and 5.8 GHz when the state of varactors is fixed, and the ranges of tuning are 4.2–4.8 GHz and 5.8–6.5 GHz when the state of PIN diodes is ON and OFF, respectively.

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9

Wu, Zhaoyang, Wei Lu, Xiangyang Bao, Fanbao Meng, Zhoubing Yang, Qian Sun, Fangzhou Zhao, and Yutian Wang. "Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch." International Journal of Modern Physics B 35, no. 07 (March 20, 2021): 2150107. http://dx.doi.org/10.1142/s0217979221501071.

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In this paper, a simulation model of [Formula: see text] type PiN high voltage pulse open switch is established. The switch operates in “punch through” mode, with a 4 kA/cm2 cut-off current density and sub-nanosecond cut-off speed. The cut-off process of switch can be divided into three stages, that is, non-equilibrium carriers extraction stage, majority carriers drift stage and charging stage of junction capacitance by change of internal electric field and carrier concentration. Keeping injection current and cut-off current as 20 A and 40 A, the switch cut-off speed and “pedestal” voltage are reciprocally determined. Thus, optimizing the doping concentration and thickness of [Formula: see text] layer is a valid solution for the actual system design.

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10

Sun, P., and D. Heo. "Analysis of parasitic effects for pin diode SPDT switch." Electronics Letters 45, no. 10 (2009): 503. http://dx.doi.org/10.1049/el.2009.0691.

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11

Gong, Liang, Rodica Ramer, and King Yuk “Eric” Chan. "Beam steering spiral antenna reconfigured by PIN diodes." International Journal of Microwave and Wireless Technologies 6, no. 6 (March 11, 2014): 619–27. http://dx.doi.org/10.1017/s1759078714000130.

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The paper proposes a new design for a single-arm, rectangular, spiral antenna (SARSA) with a wide azimuth space coverage. The antenna, operating at around 3.3 GHz, is capable of steering the beam in four separate directions in the azimuth plane. Only three DC signals are required to control the seven PIN diodes attached along the spiral arm. The antenna has a 200-MHz-bandwidth around 3.3 GHz with stable maximum beam directions that are defined by setting of the switches. Considerations required in selecting switch positions when designing such antennas for other frequencies, are presented. The measured return loss, radiation pattern and gain, all have close correlation with the simulation results. A detailed comparison of our design with those already proposed in the literature is given.

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12

Kim, Dong-Wook, Kyeong-Hak Kim, and Bo-Bae Kim. "Implementation of High-Power PM Diode Switch Modules and High-Speed Switch Driver Circuits for Wibro Base Stations." Journal of Korean Institute of Electromagnetic Engineering and Science 18, no. 4 (April 30, 2007): 364–71. http://dx.doi.org/10.5515/kjkiees.2007.18.4.364.

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13

Huang, Chyouh Wu. "The Effect of Electrical Switch Structure to the Contact Voltage-Drop and Temperature Variations." Applied Mechanics and Materials 284-287 (January 2013): 1109–15. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.1109.

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Due to the continuing renovation of the modern technology and the demand for the better consumer products, electricity has become one of the important factors that affect people’s life. The electrical switch is an important element of the electrical device and has been used intensively in industry and transportation devices, such as electrical bicycle, electrical motorcycle, winch etc. As the increasing usage of the electrical switch, the switch quality requirement increases as well. The important factors are contact point mass transferring loss, electric arc energy and contact point resistance and loss. Once the contact point fails to function, the whole electrical device ceases to function. However, regarding the electrical efficiency, in addition to the effect of the contact point materials, the structure is an important factor. In this study the structure of the electrical switch is studied and the effects of spring stiffness, guiding pin and ring to the switch lifespan are discussed. Taguchi method was used to design the experiment. L9(34) Orthogonal Array table was used to perform and discuss the effect of four factors to the desired characteristics; that is to minimize both the contact voltage-drop and the contact temperature increase. Four factors chosen are guiding pin material, compression spring, contact spring and buckle. Test results show that contact spring has the most effectiveness to the contact voltage-drop and temperature increase and is followed by compression spring. Guiding pin and ring type have minimum influence.

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14

Premalatha, J., D. Sheela, and M. Abinaya. "Reconfiguration of Circular Microstrip Patch Antenna for Wireless Applications." International Journal of Engineering & Technology 7, no. 3.6 (July 4, 2018): 348. http://dx.doi.org/10.14419/ijet.v7i3.6.15130.

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Reconfigurable antennas provide a possible solution to solve the related problems using the ability to switch frequency, patterns and polarization. This paper represents a possible application in wireless communication using reconfigurable Microstrip patch antenna. The dielectric substrate of proposed circular Microstrip patch antenna is fabricated with FR 4 epoxy and patch design 40x40x1.6mm. This work provides a methodology to design reconfigurable antennas with PIN diode switch. The frequency reconfiguration achieved by PIN diodes At the range of 3 GHZ to 6.9 GHZ the frequency reconfigurability is realized. To resonate the antenna at various frequencies PIN diode is used. Simulation of Ansoft HFSS software is used to compute the gain, axial ratio, radiation pattern, and return loss of proposed antenna. The structure of circular patch antenna achieves an enhanced wide bandwidth. The results show a better frequency reconfiguration.

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15

Mittal, Ashok, and Umesh Bahuguna. "Wide-band PIN diode SPST switch in unilateral asymmetric finline." International Journal of Electronics 88, no. 4 (April 2001): 499–505. http://dx.doi.org/10.1080/00207210019331.

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16

Inagaki, Shuichiro, Tsuneo Kanai, and Shigefumi Hosokawa. "High-density pin-board matrix switch and its crosstalk characteristics." Electronics and Communications in Japan (Part I: Communications) 78, no. 7 (July 1995): 42–52. http://dx.doi.org/10.1002/ecja.4410780704.

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17

Sun, C. K., R. Nguyen, D. J. Albares, and C. T. Chang. "Photo-injection back-to-back PIN switch for RF control." Electronics Letters 33, no. 18 (1997): 1579. http://dx.doi.org/10.1049/el:19971044.

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18

Shairi, Noor Azwan, Nursyahirah Mohd Sanusi, Adib Othman, Zahriladha Zakaria, and Imran Mohd Ibrahim. "Performance analysis of Ultra-wideband RF switch using discrete PIN diode in SC-79 package for medical application of microwave imaging." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (December 1, 2019): 4668. http://dx.doi.org/10.11591/ijece.v9i6.pp4668-4674.

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<span>Microwave imaging is an emerging technology in the medical application which have similar functions as X-ray, Magnetic Resonance Imaging (MRI), and Computed Tomography scan (CT scan). In designing a microwave imaging system for medical application, it can use a monostatic radar approach by transmitting a Gaussian pulse (with an ultra-wideband (UWB) frequency). In this system, eight antennas are required with the support of RF switches. Thus, it is important to get the best performance of UWB RF switch in this application. Therefore, this paper presents the performance analysis of four different RF switch topologies (Design 1, 2, 3 and 4) using discrete PIN diode in SC-79 package. The design was based on single pole double throw (SPDT) switch. As result, Design 2 is the best topology after considering the tradeoff between isolation and return loss performances. Based on the three cascaded SPDT switches of Design 2, the insertion loss was less than -2 dB and return loss was more than -10 dB. Meanwhile, the isolation bandwidth (at the minimum isolation of -20 dB) was from 0.5 to 3.7 GHz (with 3.2 GHz bandwidth), hence, it could be used in the UWB frequency for medical application of microwave imaging.</span>

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19

Pasternak, Yu, E. Ishchenko, V. Pendyurin, and S. Fedorov. "Use of Active Metamaterial as a Phase Shifter Integrated into the Waveguide." Proceedings of Telecommunication Universities 7, no. 1 (March 31, 2021): 54–62. http://dx.doi.org/10.31854/1813-324x-2021-7-1-54-62.

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Active metamaterials usage is one of the most promising ways to control the characteristics of antennas, waveguides, and other microwave devices. This article proposes the controlled metamaterial design in the form of an electromagnetic crystal with switches located at the nodes of the crystal lattice. This metamaterial application for changing the fundamental mode phase of the WR-137 waveguide is investigated. Controlling the characteristics of the metamaterial is performed by switching pin diodes at the nodes of the lattice, so this control method allows you to achieve a high speed system, as well as to switch only certain pin diodes. Electrodynamic modeling was carried out, on the basis of which the characteristics of the waveguide were obtained for different metamaterial closed nodes combination, which changes the the electromagnetic wave phase.

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20

Hassan Nejdi, Ibrahime,. "Frequency-Reconfigurable Multiband Antenna Based on Pin Switch for Wireless Applications." International Journal of Advanced Trends in Computer Science and Engineering 9, no. 1.5 (September 15, 2020): 138–46. http://dx.doi.org/10.30534/ijatcse/2020/2091.52020.

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21

Yamada, Takuma, Akira Ejiri, Syun'ichi Shiraiwa, and Yuichi Takase. "Two-Chord Interferometry Using a Pin Switch for Plasma Density Measurement." Japanese Journal of Applied Physics 40, Part 1, No. 12 (December 15, 2001): 7083–84. http://dx.doi.org/10.1143/jjap.40.7083.

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22

Okada, Masakazu, Teruaki Kumazawa, Yusuke Kobayashi, Masakazu Baba, and Shinsuke Harada. "Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS." Materials Science Forum 1004 (July 2020): 795–800. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.795.

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A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.

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23

Mohsen, Mowafak khadom, M. S. M. Isa, Z. Zakaria, A. A. M. Isa, M. K. Abdulhameed, and Mothana L. Attiah. "Control Radiation Pattern for Half Width Microstrip Leaky Wave Antenna by Using PIN Diodes." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (October 1, 2018): 2959. http://dx.doi.org/10.11591/ijece.v8i5.pp2959-2966.

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<p class="Default">In this paper, a novel design for single-layer half width microstrip leakywave antenna (HW-MLWA) is demonstrated. This model can be digitally control its radiation pattern at operation frequency and uses only two values of the bias voltage, with better impedance matching and insignificant gain variation. The scanning and controlling the radiation pattern of leaky-wave antennas (LWA) in steps at an operation frequency, by using switches PIN diodes, is investigated and a novel HW-MLWA is introduced. A control cell reconfigurable, that can be switched between two states, is the basic element of the antenna. The periodic LWA is molded by identical control cells where as a control radiation pattern is developed by combining numerous reconfigurable control cells. A gap capacitor is independently connected or disconnected in every unit cell by using a PIN diode switch to achieve fixedfrequency control radiation pattern scanning. The profile reactance at the free edge of (HW-MLWA) and thus the main lobe direction is altered by changing the states of the control cell. The antenna presented in this paper, can scan main beam between 18o to 44o at fixed frequency of 4.2 GHz with measured peak gain of 12.29 dBi.</p>

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24

Choi, Yoon-Seon, Ji-Hun Hong, and Jong-Myung Woo. "Electrically and Frequency-Tunable Printed Inverted-F Antenna with a Perturbed Parasitic Element." Journal of Electromagnetic Engineering and Science 20, no. 3 (July 31, 2020): 164–68. http://dx.doi.org/10.26866/jees.2020.20.3.164.

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This study designed an electrically and frequency-tunable printed inverted-F antenna (PIFA) with a perturbed parasitic element between the antenna and the ground plane. The resonant frequency of the proposed antenna can be changed via the short- and open-circuit operation of the parasitic element. This operation is activated using an electrical switch, which in this case is a PIN diode with an inductor and a resistor. The antenna was designed on the basis of the principles of the perturbation method, which enables control over resonant frequencies through modifications to the volume of a metal cavity. Meandered gaps were incorporated into the parasitic element for the independent operation of each PIN diode switch. The size of the PIFA’s radiator is 4.8 × 10 mm<sup>2</sup>, and the tunable resonant frequency at the –10 dB bandwidth is 340 MHz (17.3%).

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25

Yang, Jung Gil, and Kyounghoon Yang. "High-Linearity K-Band Absorptive-Type MMIC Switch Using GaN PIN-Diodes." IEEE Microwave and Wireless Components Letters 23, no. 1 (January 2013): 37–39. http://dx.doi.org/10.1109/lmwc.2012.2234732.

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26

Sun, Pinping, Parag Upadhyaya, Dong-Ho Jeong, Deukhyoun Heo, and George S. La Rue. "A Novel SiGe PIN Diode SPST Switch for Broadband T/R Module." IEEE Microwave and Wireless Components Letters 17, no. 5 (May 2007): 352–54. http://dx.doi.org/10.1109/lmwc.2007.895706.

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27

Liu, Donghua, Wensheng Qian, Wenting Duan, Jun Hu, Fan Chen, Xiongbin Chen, Jing Shi, et al. "A Novel PIN Switch Diode Integrating with 0.18um SiGe HBT BiCMOS Process." ECS Transactions 44, no. 1 (December 15, 2019): 105–14. http://dx.doi.org/10.1149/1.3694303.

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28

Keppke, K. D., W. J. Perold, and P. W. van der Walt. "A high performance four port PIN diode switch for television broadcasting applications." IEEE Transactions on Broadcasting 34, no. 3 (1988): 331–35. http://dx.doi.org/10.1109/11.7305.

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29

Liu, Q. Z., and R. I. MacDonald. "Modeling of optoelectronic switch with PIN photodiode and GaAs MESFET transmission gate." IEEE Transactions on Electron Devices 43, no. 11 (1996): 1833–37. http://dx.doi.org/10.1109/16.543015.

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Hunt, G. W., and T. J. Dodwell. "Complexity in phase transforming pin-jointed auxetic lattices." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 475, no. 2224 (April 2019): 20180720. http://dx.doi.org/10.1098/rspa.2018.0720.

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We demonstrate the complexity that can exist in the modelling of auxetic lattices. By introducing pin-jointed members and large deformations to the analysis of a re-entrant structure, we create a material which has both auxetic and non-auxetic phases. Such lattices exhibit complex equilibrium behaviour during the highly nonlinear transition between these two states. The local response is seen to switch many times between stable and unstable states, exhibiting both positive and negative stiffnesses. However, there is shown to exist an underlying emergent modulus over the transitional phase, to describe the average axial stiffness of a system comprising a large number of cells.

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Mahlaoui, Zakaria, Eva Antonino-Daviu, and Miguel Ferrando-Bataller. "Radiation Pattern Reconfigurable Antenna for IoT Devices." International Journal of Antennas and Propagation 2021 (August 17, 2021): 1–13. http://dx.doi.org/10.1155/2021/5534063.

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Based on the characteristic mode theory, a versatile radiation pattern reconfigurable antenna is proposed. The analysis starts from two parallel metallic plates with the same and different dimensions. By means of two PIN diodes, the size of one of the parallel metallic plates can be modified and consequently the behavior of the radiation pattern can be switched between bidirectional and unidirectional radiation patterns. Moreover, a SPDT switch is used to adjust the frequency and match the input impedance. The reconfigurable antenna prototype has been assembled and tested, and a good agreement between simulated and measured results is obtained at 2.5 GHz band which fits the IoT applications.

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NURMANTRIS, DWI ANDI, HEROE WIJANTO, and BAMBANG SETIA NUGROHO. "Optimasi Pattern Reconfigurable Antenna Bercelah Melingkar menggunakan Algoritma Genetika." ELKOMIKA: Jurnal Teknik Energi Elektrik, Teknik Telekomunikasi, & Teknik Elektronika 8, no. 1 (January 31, 2020): 111. http://dx.doi.org/10.26760/elkomika.v8i1.111.

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ABSTRAK Penelitian ini bertujuan untuk mendapatkan suatu desain pattern reconfigurable antenna dengan menitikberatkan pada optimasi antena planar berbentuk lingkaran dengan 24 switch berupa shorting pin pada tepi patch dan menambahkan celah melingkar pada patchnya sebagai metode penyepadan impedansi. Algoritma Genetika digunakan sebagai metode optimasi antena sedangkan Finite Element method digunakan sebagai metode komputasi untuk mendapatkan nilai parameter antena ketika proses evaluasi fungsi fitness. Keduanya dikolaborasikan untuk mendapatkan suatu desain antena yang mempunyai kemampuan pattern reconfigurable. Hasilnya diperoleh suatu desain antena pada frekuensi 2,4 Ghz dengan 24 pola pancar yang bisa di switch ke seluruh bidang azzimuth dimana semua pola pancar didesain pada arah elevasi 45o. Kata kunci: optimasi, celah melingkar, algoritma genetika, pattern reconfigurable antenna ABSTRACT This research aims to obtain a reconfigurable antenna pattern design with emphasize on the optimization of a planar circular antenna with 24 switchs on the edge of the patch and add a slit ring in the patch as a impedance matching method. Genetic Algorithm is used as an antenna optimization method while the The Finite Element method is used as a computational method to obtain the antenna parameters value when evaluating the fitness function. Both collaborated to obtain an antenna design that has the pattern reconfigurable ability. The result is 2,4 Ghz antenna design with 24 radiation patterns that can be switched to all azzimuth plane where all are designed in 45o of elevation plane. Keywords: optimization, slit ring, genetic algorithm, pattern reconfigurable antenna

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33

Huang, Ying, Qi Pan, Qi Liu, Xin Peng He, Yun Feng Liu, and Yong Quan Yu. "Application of Improved Canny Algorithm on the IC Chip pin Inspection." Advanced Materials Research 317-319 (August 2011): 854–58. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.854.

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Machine vision is widely used in chip pin automation detection of defects, the accuracy of image edge extraction for detection result has very big effect. Canny edge detection algorithm is a kind of edge detection algorithm which have good comprehensive evaluation, but the Gaussian filter algorithm it used may cause image too smooth and fuzzy of the edge, and it is very sensitive for impulse noise. This paper discusses the improved methods of Canny, proposes an improved switch median filter algorithm, which is applied into Canny algorithm, makes the edge of IC Chip pin more complete and remove noise better.

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Kobayashi, K. W., L. T. Tran, S. Bui, J. R. Velebir, A. K. Oki, and D. C. Streit. "Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switch." IEEE Microwave and Guided Wave Letters 3, no. 10 (October 1993): 384–86. http://dx.doi.org/10.1109/75.242270.

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Takasu, H. "Estimation of equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch." IEE Proceedings - Circuits, Devices and Systems 150, no. 2 (2003): 92. http://dx.doi.org/10.1049/ip-cds:20030335.

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Zheng, Jiajiu, Zhuoran Fang, Changming Wu, Shifeng Zhu, Peipeng Xu, Jonathan K. Doylend, Sanchit Deshmukh, et al. "Nonvolatile Electrically Reconfigurable Integrated Photonic Switch Enabled by a Silicon PIN Diode Heater." Advanced Materials 32, no. 31 (June 26, 2020): 2001218. http://dx.doi.org/10.1002/adma.202001218.

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Vijayan, Arun, and Karl Marx LR. "Internet of Things Controlled Reconfigurable Antenna for RF Harvesting." Defence Science Journal 68, no. 6 (October 31, 2018): 566. http://dx.doi.org/10.14429/dsj.68.12669.

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<p>Internet of Things (IoT) controlled a reconfigurable antenna with PIN diode switch for modern wireless communication is designed and implemented. Direct contact of biasing network with the antenna is eliminated and the switching unit is manipulated through IoT method. The proposed antenna has ring structures, in which the outer ring connects the inner ring structure through a PIN diode switch. The dimension of the proposed antenna is reported as 50 mm × 50 mm and its prototype has been made-up on epoxy-Fr4 substrate with 1.6 mm thickness. This antenna setup is made to reconfigurable in four bands (4.5 GHz, 3.5 GHz, 2.4 GHz, and 1.8 GHz) through switching provided by IoT device (NodeMCU). The antenna has a good return loss greater than -10dB.In switching state 2 the antenna has a return loss of -30 dB peak is attained at 3.4 GHz of operating frequency. Similarly the gain response of antenna is good in its operating bands of all switching states and obtained a maximum gain of 2.7 dB in 3.5 GHz. Bidirectional radiation pattern is obtained in all switching states of the antenna.</p>

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Tao, Meng Ling, Xiao Chuan Deng, Hao Wu, and Yi Wen. "Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier." Materials Science Forum 1014 (November 2020): 115–19. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.115.

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A 10kV/100A SiC PiN rectifier with MRM-JTE (multiple-ring modulated junction termination extension) is designed, fabricated and characterized. The optimized MRM-JTE achieves high breakdown capability and extends the optimal JTE dose window. A 100μm thick epitaxial SiC PiN rectifier with a doping concentration of 5×1014cm−3 has been fabricated using a standard TZ-JTE process. A 5.4V forward voltage drop is obtained at 100A forward current. Moreover, a measured breakdown voltage is up to 13.5kV corresponding to about 96% of the ideal parallel plane junction. The fabricated device exhibits a low RON,SP of 3.76mΩ·cm2 at 200A/cm2 , and a high BFOM of 48.5GW/cm2. In addition, the C-V characteristic and reverse recovery switch characteristic are also analyzed. In this paper, the successfully fabrication of high-voltage SiC PiN rectifier provides a further development for high-voltage high-power SiC power modules.

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Ramli, Nurulazlina, Mohd Tarmizi Ali, Azita Laily Yusof, Suzilawati Muhamud-Kayat, and Hafiza Alias. "APERTURE-COUPLED FREQUENCY-RECONFIGURABLE STACKED PATCH MICROSTRIP ANTENNA (FRSPMA) INTEGRATED WITH PIN DIODE SWITCH." Progress In Electromagnetics Research C 39 (2013): 237–54. http://dx.doi.org/10.2528/pierc13022502.

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Takasu, Hideki. "Ka-band single-pole double-throw MMIC switch using low-loss GaAs PIN diode." Electronics and Communications in Japan (Part II: Electronics) 83, no. 8 (2000): 27–32. http://dx.doi.org/10.1002/1520-6432(200008)83:8<27::aid-ecjb4>3.0.co;2-t.

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Friml, J. "A PINOID-Dependent Binary Switch in Apical-Basal PIN Polar Targeting Directs Auxin Efflux." Science 306, no. 5697 (October 29, 2004): 862–65. http://dx.doi.org/10.1126/science.1100618.

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Subramaniam, D., M. Jusoh, T. Sabapathy, M. N. Osman, M. R. Kamarudin, R. R. Othman, and M. R. Awal. "A compact high-gain parasitic patch antenna with electronic beam-switching." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 2 (February 1, 2019): 551. http://dx.doi.org/10.11591/ijeecs.v13.i2.pp551-555.

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<span>A high beam steering antenna using HPND PIN Diode is proposed with a capability of steering its beam into three different directions -40 º, 0º and 40 º with respective switching condition. The reconfigurable parasitic antenna consists of a driven element and two reconfigurable parasitic elements, is designed with operating range of 9.5GHz. The parasitic elements act as reflectors or director depending on the switching conditions. Both parasitic elements are connected to ground plane via shorting pins. The reconfiguration is controlled by the two HPND PIN Diode switch that embeds to the parasitic element. An average gain value of 8dBi is achieved at all reconfiguration scenarios. All the simulated design has been carried out using CST software.</span>

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Bui, Cong, Thanh Dang, Minh Doan, and Truong Nguyen. "A Frequency and Polarization Reconfigurable Dual-Patch Microstrip A Frequency and Polarization Reconfigurable Dual-Patch Microstrip." Applied Computational Electromagnetics Society 36, no. 2 (March 16, 2021): 152–58. http://dx.doi.org/10.47037/2020.aces.j.360206.

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This paper proposes a reconfigurable microstrip patch antenna design for wireless ISM band applications. The antenna simultaneously uses PIN Diodes to switch between linear and circular polarization at 2.45 GHz and uses Varactor Diode to continuously tune the operating frequency from 1.73 GHz to 2.45 GHz. The antenna performance is characterized as a combination of ON/OFF state of PIN Diode and a bias voltage of Varactor Diode varying from 0.8V to 10V. A good agreement between simulation and measurement is obtained which validates the proposed method. The proposed frequency/polarization reconfigurable antenna is promising for various applications in wireless ISM band such as DCS (1710 – 1880 MHz), PCS (1850 – 1990 MHz), GSM 1800, GSM 1900, UMTS (1920 – 2170 MHz) and WiFi/Bluetooth (2.4 – 2.5 GHz).

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44

Pratap, Prabal, Ravinder Singh Bhatia, and Binod Kumar. "Switchable dual band equilateral triangular microstrip patch antenna using pin diode." International Journal of Pervasive Computing and Communications 11, no. 1 (April 7, 2015): 69–76. http://dx.doi.org/10.1108/ijpcc-09-2014-0046.

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Purpose – The purpose of this paper is to study and calculate the electrical characteristic of an equilateral triangular microstrip patch antenna that is proposed for dual frequency operation using the pin diode. The electrical characteristic of an equilateral triangular microstrip patch antenna is proposed for dual-frequency operation. Spur lines and ON/OFF condition of the pin diode are utilized to switch the resonant frequency of the patch. The presence of spur lines excites the surface current of the patch which is dependent on the resonant frequency of an equilateral triangular microstrip patch. Insertion of the diode in the spur lines gives a better result and compactness in patch design, which improves the miniaturization in size of patch. Design/methodology/approach – Antenna Design Aspects: A basic structure of an equilateral triangular microstrip antenna (ETMA) having two spur lines and one pin diode positioned in between the spur line is considered in this paper. The design parameters are chosen on the basis of substrate materials having relative permittivity less than three. Specification of the antenna is given in Table I. Substrate material used is RT Duroid 5,880; relative permittivity of the substrate er is 2.2; thickness of dielectric substrate h is 1.5 mm; sides of equilateral triangular patch a are 10 mm, spur width s is 0.5 mm; and spur length b is 2.0 mm. Findings – This paper gives an account of achieving polarization swiftness with coplanar waveguide (CPW) feed. The miniaturized size of the antenna is 35 × 30 mm2. Switchable microstrip equilateral triangular antenna has been demonstrated for dual-frequency operations. The resonant frequency of an ETMA can be adjusted by setting the diode in an ON and OFF state. The design improves the miniaturization in size with a discussion of radiation density. The excited patch surface current is limited to flow around just the mid of the patch in simple ETMA with a single slit cut. It is observed that for an ETMA, when the diode is in the ON state at 9.16 GHz, the excited patch surface current is highly distributed in the patch compared to when the diode is in the ON state at 11 GHz. Similarly, it is observed that the excited surface patch current is highly distributed when the diode is in the OFF state in both frequencies (9 and 11.96 GHz). The mode is changed by the use of a switch at time and it is suitable for wireless communication applications. Originality/value – Spur lines and the ON/OFF condition of the pin diode are utilized to switch the resonant frequency of the patch. The presence of spur lines excites the surface current of the patch which is dependent on the resonant frequency of an equilateral triangular microstrip patch. Insertion of the diode in spur lines gives a better result and compactness in patch design, which improves the miniaturization in size of the patch.

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Sedghara, Ailar, and Zahra Atlasbaf. "A novel single-feed reconfigurable antenna for polarization and frequency diversity." International Journal of Microwave and Wireless Technologies 9, no. 5 (December 5, 2016): 1155–61. http://dx.doi.org/10.1017/s1759078716001240.

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A novel dual-band single-feed reconfigurable annular-ring slot antenna with polarization diversity is proposed. This antenna has the ability to switch frequency bands and polarization at the same time whereas applying a simple structure. It consists of two concentric circular slots and two tuning stubs on one side of the substrate and a 50 Ω microstrip feed line and two stubs on the other side. The proposed antenna can be switched between two resonant frequencies, 2.4 GHz (WLAN) and 3.5 GHz (Wimax). Furthermore, it can be switched between linear polarization (LP), left-hand circular polarization (LHCP), and right-hand circular polarization (RHCP) at the first frequency band, LHCP and RHCP at the second band. All these capabilities are achieved by applying only five PIN diodes on both sides of the substrate. Simulation and experimental results indicate that the proposed antenna demonstrates a good impedance bandwidth at the two frequency bands and satisfactory radiation pattern in five different states.

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46

Kim, Dong-Wook. "Small-Sized High-Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet." ETRI Journal 28, no. 1 (February 8, 2006): 84–86. http://dx.doi.org/10.4218/etrij.06.0205.0080.

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47

Jung Gil Yang and Kyounghoon Yang. "Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure." IEEE Microwave and Wireless Components Letters 19, no. 10 (October 2009): 647–49. http://dx.doi.org/10.1109/lmwc.2009.2029745.

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48

Shin, Dong-Ryul, JeongPyo Kim, ChangHyun Park, and Wonmo Seong. "A dual-band RF switch using composite right/left-handed transmission lines and PIN diodes." Microwave and Optical Technology Letters 50, no. 8 (2008): 2074–77. http://dx.doi.org/10.1002/mop.23591.

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49

Persson, L., and A. Jonsson. "Ultrasonic inspection of line pin post insulators and solid core insulators in switch gear stations." NDT & E International 26, no. 3 (June 1993): 115–17. http://dx.doi.org/10.1016/0963-8695(93)90596-m.

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50

Elsheakh, Dalia M., and Esmat A. Abdallah. "Ultrawideband Vivaldi Antenna for DVB-T, WLAN, and WiMAX Applications." International Journal of Antennas and Propagation 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/761634.

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Compact Vivaldi patch antenna with a parasitic meander line is presented in this paper. A PIN diode switch is used to connect and disconnect ultrahigh frequency band (UHF) with ultrawide bandwidth (UWB). The operating frequencies can be switched among different services, depending on the switching states (ON/OFF) to add the lower band when required. This antenna is suitable for portable DVB-T which extended from 450 MHz to 850 MHz receiver applications and the WLAN (Wireless Local Area Network) IEEE 802.11b,g (5.1–5.8) GHz frequency bands and WiMAX band (3.3–3.8) GHz. The measured reflection coefficient of the proposed antenna is compared with the simulated one; good agreement is observed. Also, simulated radiation pattern of the antenna is presented. All simulations are carried out using the EM commercial simulator, high frequency structure simulator (HFSS) ver.13.

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