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1
Szász, Cs. "Reconfigurable electronics application in intelligent space developments." International Review of Applied Sciences and Engineering 8, no. 2 (December 2017): 107–11. http://dx.doi.org/10.1556/1848.2017.8.2.1.
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Reconfigurable electronics technology represents a challenging implementation paradigm of actual stage microelectronics. This paper presents the advantages of using hardware reconfigurable microelectronics technology in intelligent spaces development and implementation. An original approach is unfolded which emphasize the versatility of reconfigurable electronic circuit’s topology based configurations in a wide range of intelligent environment applications. The introduced theoretical approaches have been validated then by a real-time intelligent space implementation example. There have been exploited the huge re-routing abilities of reconfigurable electronics associated with its fine-grained operating behaviours. The final result of the theoretical and experimental research efforts is a well-fitted and practical solution for a wide range of intelligent space applications development and implementation.
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Yudin, E. B., and V. P. Korolev. "ELECTRICAL, ELECTRONICS AND INFORMATION TECHNOLOGY SCIENCE MAP." DYNAMICS OF SYSTEMS, MECHANISMS AND MACHINES 10, no. 2 (2022): 78–87. http://dx.doi.org/10.25206/2310-9793-2022-10-2-78-87.
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The map of science for the Omsk State Technical University in the field of microelectronics and information technology is presented in the work. The map was built on the basis of data from the SciVal scientometric system based on university publications in Scopus. Also, the results of registration of intellectual activity, registered in the Unified State Information System of Accounting. research, development and technological work for civil purposes are used.
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Buriak, Jillian M. "High surface area silicon materials: fundamentals and new technology." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 364, no. 1838 (November 29, 2005): 217–25. http://dx.doi.org/10.1098/rsta.2005.1681.
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Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.
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Martin, D. John. "The Electronics and Control Technology Domain of the Microelectronics Education Programme." British Journal of Educational Technology 18, no. 3 (October 1987): 232–46. http://dx.doi.org/10.1111/j.1467-8535.1987.tb00653.x.
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IMANAKA, Yoshihiko. "Future Perspective of Materials and Processes of LTCC Technology Beyond Microelectronics Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, CICMT (September 1, 2015): 000002–13. http://dx.doi.org/10.4071/cicmt-keynote2_fujitsu.
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As semiconductor technology advances and computers become smaller with higher functionality, the technology has extended into a variety of areas, such as IT-enabled household electronics, ICT devices, electronic automobiles and ITS transport networks, to enrich people's lives. Packaging technology serves as a vital bridge between semiconductor chips and computer systems. Its considerable value is recognized in the constant contributions it makes in bringing about a prosperous life. This paper addresses the two mainstream areas of high-end computers and consumer products, with a special focus on the ceramic materials and process technology of the packaging technologies field at the primary packaging level. Drawing on the past and present developments in these areas as well as future prospects, the paper elucidates the significance of ceramics in packaging.
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Lv, Gen Lai. "Mechanical and Electrical Integration in the Application of the Excavator." Applied Mechanics and Materials 651-653 (September 2014): 772–75. http://dx.doi.org/10.4028/www.scientific.net/amm.651-653.772.
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Mechanical and electrical integration, also known as mechanical, electronics is an interdisciplinary comprehensive high technology, is made up of microelectronics technology, computer technology, information technology, automatic control technology, mechanical technology, hydraulic technology and other technology cross mutual fusion and become an independent discipline. This article mainly discusses the mechanical and electrical integration in the application of all kinds of excavator.
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Polushkin, E. A., S. V. Nefed’ev, A. V. Koval’chuk, O. A. Soltanovich, and S. Yu Shapoval. "Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology." Микроэлектроника 52, no. 3 (May 1, 2023): 236–39. http://dx.doi.org/10.31857/s0544126923700321.
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This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.
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Chason, Marc, Daniel R. Gamota, Paul W. Brazis, Krishna Kalyanasundaram, Jie Zhang, Keryn K. Lian, and Robert Croswell. "Toward Manufacturing Low-Cost, Large-Area Electronics." MRS Bulletin 31, no. 6 (June 2006): 471–75. http://dx.doi.org/10.1557/mrs2006.121.
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AbstractDevelopments originally targeted toward economical manufacturing of telecommunications products have planted the seeds for new opportunities such as low-cost, large-area electronics based on printing technologies. Organic-based materials systems for printed wiring board (PWB) construction have opened up unique opportunities for materials research in the fabrication of modular electronic systems.The realization of successful consumer products has been driven by materials developments that expand PWB functionality through embedded passive components, novel MEMS structures (e.g., meso-MEMS, in which the PWB-based structures are at the milliscale instead of the microscale), and microfluidics within the PWB. Furthermore, materials research is opening up a new world of printed electronics technology, where active devices are being realized through the convergence of printing technologies and microelectronics.
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Greenwood, Jonathon. "Strategy and Ecosystem for Microelectronics Assembly in the United States." International Symposium on Microelectronics 2016, S1 (October 1, 2016): S1—S22. http://dx.doi.org/10.4071/isom-2016-slide-2.
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In the 1980's the US based electronics manufacturing and ecosystem witnessed a significant shift from manual operations to automated assembly to enable high volume, lower cost products. The maturation of surface mount technology and the introduction of organic semiconductor packaging were key drivers and enablers during this era. The 1990's brought about the shift from the OEM microelectronics innovation & assembly ecosystem to the outsourced model as OEM's tried to stay ahead of the cost reduction curve during this dotcom era. The end result was a short lived US based model for outsourced volume microelectronics assembly that crashed with many of the other startups in the early 2000's. The severity of the downturn not only affected the volume assembly service model but, more importantly the innovation and development opportunities for microelectronics as well. With the recent renewed emphasis on innovation, security, reshoring and manufacturing job creation the opportunity to create a new model for microelectronics assembly in the US has successfully emerged.
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DiBattista, Michael. "The Electronics Resurgence Initiative 2.0 for U.S. Semiconductor Manufacturing." EDFA Technical Articles 26, no. 1 (February 1, 2024): 2–50. http://dx.doi.org/10.31399/asm.edfa.2024-1.p002.
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Abstract The second Electronics Resurgence Initiative (ERI 2.0), sponsored by the U.S. Defense Advanced Research Project Agency (DARPA) Microsystems Technology Office (MTO), is focused on driving next generation dual use microelectronics for national security and domestic needs. The initiative focuses on creating U.S. capability for three-dimensional heterogeneous integration (3DHI) manufacturing and pursuing focused research for the manufacture of complex 3D microsystems. This guest editorial describes the outcomes from a three-day summit (Seattle, Washington, August 2023) where the initiative was launched.
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Grimmeiss, Hermann G., and Erich Kasper. "Today’s Mainstream Microelectronics - A Result of Technological, Market and Human Enterprise." Materials Science Forum 608 (December 2008): 1–16. http://dx.doi.org/10.4028/www.scientific.net/msf.608.1.
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Microelectronics is a central area within information technology, which is still one of the most important global technologies. It will be shown that the development of integrated circuits is based on a long and fascinating history, which is unique in modern time. Yet, the fantastic growth in semiconductor electronics is due to a unique combination of basic conceptional advances, the perfection of new materials and the development of new device principles. A brief survey of the development of microelectronics is given by not only focusing on the history of microelectronics but also taking into account materials and market aspects. Since microelectronics is an extremely complex area, a few criteria and reference points for integrated circuits are given. Thereafter, some examples are presented indicating the rapidly changing state-of-the-art. It will be shown that the development of material science within the area of microelectronics is not always driven by scientific curiosity but often by arbitrary and not always obvious preferences. After a short discussion of the performance advantages and disadvantages of germanium, silicon and III-V compound semiconductors, the SiGe heterojunction bipolar transistor is taken as an example for demonstrating a few important differences in the performance of all-silicon devices with regard to silicon-based heterojunction devices in general. In conclusion, the impact of human enterprise and research policy on the development of microelectronics is briefly discussed.
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Pandey, R. K., H. Stern, W. J. Geerts, P. Padmini, P. Kale, Jian Dou, and R. Schad. "Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices." Advances in Science and Technology 54 (September 2008): 216–22. http://dx.doi.org/10.4028/www.scientific.net/ast.54.216.
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The phenomenal growths of information technology and related fields have warranted the development of new class of materials. Multifunctional oxides, magnetic-semiconductors, multiferroics and smart materials are just a few examples of such materials. They are needed for the development of novel technologies such as spintronics, magneto-electronics, radhard electronics, and advanced microelectronics. For these technologies, of particular interest are some solid solutions of ilmenite-hematite (IH) represented by (1-x) FeTiO3.xFe2O3 where x varies from 0 to 1; Mn-doped ilmenite (Mn+3-FeTiO3) and Mn-doped pseudobrookite, Mn+3-Fe2TiO5 (PsB). These multifunctional oxides are ferromagnetic with the magnetic Curie points well above the room temperature as well as wide bandgap semiconductors with band gap Eg > 2.5 eV. This paper outlines: (a) processing of device quality samples for structural, electrical and magnetic characterization, (b) fabrication and evaluation of an integrated structure for controlled magnetic switching, and (c) the response of the two terminal non-linear current-voltage (I-V) characteristics when biased by a dc voltage. Subsequently, we will identify a few microelectronic applications based on this class of oxides.
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Djakov, Tatjana, Ivanka Popovic, and Ljubinka Rajakovic. "Micro-electro-mechanical systems (MEMS): Technology for the 21st century." Chemical Industry 68, no. 5 (2014): 629–41. http://dx.doi.org/10.2298/hemind131008091d.
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Micro-electro-mechanical systems (MEMS) are miniturized devices that can sense the environment, process and analyze information, and respond with a variety of mechanical and electrical actuators. MEMS consists of mechanical elements, sensors, actuators, electrical and electronics devices on a common silicon substrate. Micro-electro-mechanical systems are becoming a vital technology for modern society. Some of the advantages of MEMS devices are: very small size, very low power consumption, low cost, easy to integrate into systems or modify, small thermal constant, high resistance to vibration, shock and radiation, batch fabricated in large arrays, improved thermal expansion tolerance. MEMS technology is increasingly penetrating into our lives and improving quality of life, similar to what we experienced in the microelectronics revolution. Commercial opportunities for MEMS are rapidly growing in broad application areas, including biomedical, telecommunication, security, entertainment, aerospace, and more in both the consumer and industrial sectors on a global scale. As a breakthrough technology, MEMS is building synergy between previously unrelated fields such as biology and microelectronics. Many new MEMS and nanotechnology applications will emerge, expanding beyond that which is currently identified or known. MEMS are definitely technology for 21st century.
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Buzynin, Alexander N., Yury N. Buzynin, and Vitaly A. Panov. "Applications of Fianite in Electronics." Advances in OptoElectronics 2012 (December 19, 2012): 1–23. http://dx.doi.org/10.1155/2012/907560.
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Fianite or yttrium stabilized zirconia (YSZ) solid solutions single crystals were known worldwide as jewelry material. The review is devoted to novel applications of the material in the field of microelectronics. A number of modern aspects of the application of fianite in micro-, opto- and SHF-electronics were analyzed in this paper. It was demonstrated that fianite is an extremely promising multipurpose material for new electronic technologies due to unique combination of physical and chemical properties. As a substrate and buffer layer for the epitaxy of Si, Ge, GeSi and AIIIBV compounds (GaAs, InGaAs, GaSb, InAs, GaN, AlN), fianite has a number of advantages over the other dielectric materials. The use of fianite (as well as ZrO2 and HfO2 oxides) instead of SiO2 as gate dielectrics in CMOC technology seems to be of peculiar interest. The unique properties of fianite as protecting, stabilizing and antireflecting coatings in electronics and optoelectronic devices have been outlined. A comparative study of the performance characteristics of fianite and conventional materials has been carried out.
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Starodubov, Dmitrii, Sebelan Danishvar, Abd Al Rahman M. Abu Ebayyeh, and Alireza Mousavi. "Advancements in PCB Components Recognition Using WaferCaps: A Data Fusion and Deep Learning Approach." Electronics 13, no. 10 (May 10, 2024): 1863. http://dx.doi.org/10.3390/electronics13101863.
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Microelectronics and electronic products are integral to our increasingly connected world, facing constant challenges in terms of quality, security, and provenance. As technology advances and becomes more complex, the demand for automated solutions to verify the quality and origin of components assembled on printed circuit boards (PCBs) is skyrocketing. This paper proposes an innovative approach to detecting and classifying microelectronic components with impressive accuracy and reliability, paving the way for a more efficient and safer electronics industry. Our approach introduces significant advancements by integrating optical and X-ray imaging, overcoming the limitations of traditional methods that rely on a single imaging modality. This method uses a novel data fusion technique that enhances feature visibility and detectability across various component types, crucial for densely packed PCBs. By leveraging the WaferCaps capsule network, our system improves spatial hierarchy and dynamic routing capabilities, leading to robust and accurate classifications. We employ decision-level fusion across multiple classifiers trained on different representations—optical, X-ray, and fused images—enhancing accuracy by synergistically combining their predictive strengths. This comprehensive method directly addresses challenges surrounding concurrency, reliability, availability, and resolution in component identification. Through extensive experiments, we demonstrate that our approach not only significantly improves classification metrics but also enhances the learning and identification processes of PCB components, achieving a remarkable total accuracy of 95.2%. Our findings offer a substantial contribution to the ongoing development of reliable and accurate automatic inspection solutions in the electronics manufacturing sector.
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Palmer, David W. "Test Structures as a Way to Evaluate Packaging Reliability." MRS Bulletin 18, no. 12 (December 1993): 55–58. http://dx.doi.org/10.1557/s0883769400039105.
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Electronics packaging has always accounted for about 50% of reliability shortcomings in electronics systems. Materials, processes, and geometries used in microelectronics packaging are quickly evolving to meet the commercial challenge for more reliable, lighter, smaller, cheaper devices, and lower power consumption. Amid the rapid evolution, methodology and metrology to measure package reliability and materials aging properties must be standardized to allow quantitative technology comparisons.What Is Packaging?For most purposes packaging can be thought of as everything involved in making an electronics system except the wafer fabrication. For example, all the design, fabrication, assembly, and finishing that goes into interconnecting the integrated circuits, discrete devices, resistors, and capacitors and then interfacing the system to the user is traditionally called “packaging.”
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Li, Shuxia, N. Garry Tarr, and Winnie N. Ye. "JFET Integration Using a Foundry SOI Photonics Platform." Applied Sciences 9, no. 19 (September 21, 2019): 3964. http://dx.doi.org/10.3390/app9193964.
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We explore the monolithic integration of conventional electronics with SOI photonics using the commercial silicon photonics foundry technology offered by A*STAR’s Institute of Microelectronics (IME). This process offers optical waveguide modulators and photodetectors, but was not intended to support transistors. We present the implementation of junction field effect transistors (JFETs) integrated with optical waveguides and photodetectors. A simple SPICE model is developed for the JFETs based on the available ion implant parameters, and the geometry feature size allowed by the technology’s layout rules. We have demonstrated the monolithic integration of photonics and electronics circuits. This work could be useful for application in waveguide sensors and optical telecommunications.
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Đoàn Thị Hồng, Vân, and Uyen Bui Nhat Le. "Factors affecting innovation capacity in Vietnamese Southern high technology industries." Journal of Asian Business and Economic Studies 24, no. 03 (July 1, 2017): 66–93. http://dx.doi.org/10.24311/jabes/2017.24.3.04.
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Numerous studies have demonstrated that the success of businesses in the era of knowledge-based economy depends on their innovation capacity (Azevedo et al., 2007). Therefore, the main goal of this study is to explore the factors that impact the innovation capacity of enterprises in the Vietnam Southern high tech industry. Besides the qualitative method, the study carries out a survey of 380 enterprises in the fields of electronics, microelectronics, information technology, telecommunications, precision engineering, automation, biotechnology, and nanotechnology. The results reveal that total quality management, internal human resources, absorptive capacity, government support, and collaboration networks impact positively on the innovation capacity. In addition, the research proposes solutions for high tech enterprises to boost their innovation capacity in the future.
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Lora-Tamayo, E., and M. D. Alvarez. "Up Close: Centra Nacional de Microelectrónica." MRS Bulletin 17, no. 3 (March 1992): 60–61. http://dx.doi.org/10.1557/s0883769400040914.
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The Spanish National Microelectronics Center (Centra Nacional de Microelectrónica or CNM), a nonprofit R&D institute, was established in 1985 through the joint efforts of the General Directorate of Science (Ministry of Education) and the General Directorate of Electronics and Computer Science (Ministry of Industry and Energy).As a scientific research center, the CNM belongs to the Spanish Science Research Council (Consejo Superior de Investigaciones Cientifícas, CSIC), but differs from other CSIC centers in two ways. CNM is a direct spinoff of a nationwide scientific and technological research program (Programa Nacional de Microelectrónica), and it has its own board of trustees with representatives from different ministries (Education, Industry and Energy, Defense, and Communications); from the local governments of Catalonia, Andalusia, and Madrid; and from microelectronics-related industries.CNM's activities are channeled toward promoting microelectronics in Spain through scientific and technological research on the design and fabrication of integrated circuits, electronic devices, and related materials, while providing technological support for industry and university research groups. The global objectives are as follows:∎ Establishment of stable quasi-industrial technologies in technological niches that permit good interaction between CNM and industry. Among those niches, fixed by Spain's national industrial policy, are application-specific integrated circuits (ASICs), power devices, semiconductor sensors, and molecular beam epitaxy (MBE) technologies and associated devices.∎ Startup of precise technological processes or new IC design techniques through cooperative research projects with industry and/or university groups that involve carrying out research and technology development tasks, renewing established technologies, and the continuing training of researchers.
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Ivanov, Alexandre A., Vasily I. Tuev, and Anatoly A. Vilisov. "Ceramic Materials for the Low-Temperature Synthesis of Dielectric Coatings Used in Electronics, Led Devices and Spacecraft Control Systems." Key Engineering Materials 712 (September 2016): 188–92. http://dx.doi.org/10.4028/www.scientific.net/kem.712.188.
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The sol-gel synthesis of filled aluminosilicates (FAS) has been developed. Such FAS consist of dendrimer morphology macromolecules capable to accommodate as a filler up to 70 % wt of high-refractory nitrides and oxides of high-melting compounds. The study of the obtained ceramic coatings on the developed metal surfaces has showed their use prospects to develop an ion beam control electrode in the ion plasma machine, microelectronics, and LED technology.
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Das, Rabindra, Steven Rosser, and Frank Egitto. "Advanced Microelectronics Packaging Solutions for Miniaturized Medical Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001963–76. http://dx.doi.org/10.4071/2013dpc-tha24.
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The wide range of applications for medical electronics drives unique requirements that can differ significantly from commercial & military electronics. To accomplish this, new packaging structures need to be able to integrate more dies with greater function, higher I/O counts, smaller die pad pitches, and high reliability, while being pushed into smaller and smaller footprints. As a result, the microelectronics industry is moving toward alternative, innovative approaches as solutions for squeezing more function into smaller packages. In the present report, key enablers for achieving reduction in size, weight, and power (SWaP) in electronic packaging for a variety of medical applications are discussed. Advanced microelectronics packaging solutions with embedded passives are enabling SWaP reductions. Implementation of these solutions has realized up to 27X reduction in physical size for existing PWB assemblies, with significant reductions in weight. Shorter interconnects can also reduce or eliminate the need for termination resistors for some net topologies. Successful miniaturized products integrate the following design techniques and technologies: component footprint reduction, thin high density interconnects substrate technologies, I/O miniaturization and IC assembly capabilities. This paper presents fabrication and electrical characterization of embedded actives and passives on organic multilayered substrates. We have designed and fabricated several printed wiring board (PWB) and flip-chip package test vehicles focusing on embedded chips, resistors, and capacitors. Embedded passive technology further enhances miniaturization by enabling components to be moved from the surface of the substrate to its internal layers. The use of thin film resistor material allows creating individual miniaturized buried resistors. These resistors provide additional length and width reduction with negligible increases to the overall substrate and module (SiP) height. Resistor values can vary from 5 ohm to 50 Kohm with tolerances from 5 to 20% and areas as small as 0.2 mm2. The embedded resistors can be laser trimmed to a tolerance of <5% for applications that require tighter tolerance. The electrical properties of embedded capacitors fabricated from polymer-ceramic nanocomposites showed a stable capacitance and low loss over a wide frequency and temperature range. A few test vehicles were assembled to do system level analysis. Manufacturing methods and materials for producing advanced organic substrates and flex along with ultra fine pitch assemblies are discussed. A case study detailing the fabrication of a flexible substrate for use in an intravascular ultrasound (IVUS) catheter demonstrates how the challenges of miniaturization are met. These challenges include use of ultra-thin polymer films, extreme fine-feature circuitization, and assembly processes to accommodate die having reduced die pad pitch. In addition, new technologies for embedding a variety of active chips are being developed. A variety of active chips, including a chip having dimensions of one millimeter square, have been embedded and electrically connected to develop high performance packages.
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Kumar, M., V. Kumar, K. Singh, S. Dubey, P. K. Tiwari, K. S. Seong, and S. H. Park. "A review on teratronics: from present state to future." Digest Journal of Nanomaterials and Biostructures 16, no. 4 (December 2021): 1365–78. http://dx.doi.org/10.15251/djnb.2021.164.1365.
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Teratronics is an interdisciplinary field of Opto-and Microelectronics embracing the important features of high-speed digital signal processing, high-frequency electronics, and optics and photonics. This is one of the significant challenging fields of solid state physics and technology with the new domains of electronics industry and research. This review outlines the different field of application of terahertz wave in security, medical imaging, chemical and biological sensing and highly emerging field of wide-band telecommunications along with the development of active and passive devices. Discussion encompasses from the founding concept of THz electronics to the development and future scopes. Content of this article will also include the new aspects of terahertz technology with their present contenders in the field of security and telecommunication. Dialogue for the newly evolved devices such as nano-ring and disk transistor along with stacked quantum dots systems also included to provide a novel glimpse for deep and underlying fundamental physical mechanism. All these topics will provide a critical supervision for further innovative stages in this field.
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Das, Rabindra N., Frank D. Egitto, and How Lin. "Anti-Counterfeit, Advanced Microelectronics Packaging Solutions for Miniaturized Medical Devices." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000158–65. http://dx.doi.org/10.4071/isom-2013-ta54.
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The medical industry is clearly and urgently in need of development of advanced packaging that can meet the growing demand for miniaturization, high-speed performance, and flexibility for handheld, portable, in vivo, and implantable devices. To accomplish this, new packaging structures need to be able to integrate more dies with greater function, higher I/O counts, smaller die pad pitches, and high reliability, while being pushed into smaller and smaller footprints. As a result, the microelectronics industry is moving toward alternative, innovative approaches as solutions for squeezing more function into smaller packages. This paper discusses the development of advanced packaging that can meet the growing demand for miniaturization, high-speed performance, and flexibility for miniaturized electronic devices. In particular, recent developments in high density interconnect (HDI) substrate technology are highlighted. System-in-Package (SiP), embedded passives, stacked packages, and flex substrates are utilized to achieve significant reduction in size, weight, and power (SWaP) consumption in electronic devices. The paper also describes a novel approach for the fabrication of silicone-coated flexible substrates to provide biocompatibility for implantable devices. In particular, we highlight recent developments on silicone coatings on high density, miniaturized polyimide-based flexible electronics. A variety of high density circuits ranging from 11 microns lines/space to 25 microns lines/spaces were processed on polyimide flex substrates and subsequently coated with biocompatible silicone coatings. The electrical performance of silicone coated batteries was characterized by voltage measurements. The final structure enhances the stretching capability. Fabrication of advanced medical substrates incorporating technologies for parts authentication (anticounterfeit measures) such as embedded signature circuits and use of nano or micro materials as signatures are discussed. In some instances, these measures do not add cost to package fabrication.
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Dmitriev, Alex A., Alex S. Dmitriev, and Inna Mikhailova. "New Nanocompoite Thermal Interface Materials Based on Graphene Flakes, Mesoscopic Microspheres and Polymers." MATEC Web of Conferences 207 (2018): 04002. http://dx.doi.org/10.1051/matecconf/201820704002.
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In recent years, there has been a great interest in the development and creation of new functional energy materials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.
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Leonardi, Antonio Alessio, Maria José Lo Faro, and Alessia Irrera. "Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review." Nanomaterials 11, no. 2 (February 3, 2021): 383. http://dx.doi.org/10.3390/nano11020383.
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Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.
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Anuradha, B., and C. Sanjeeviraja. "Review on Magnesium Indium Oxide Thin Films: Material Properties and Preparation Techniques." Materials Science Forum 699 (September 2011): 39–66. http://dx.doi.org/10.4028/www.scientific.net/msf.699.39.
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Thin films of pure metals, alloys, semiconductors and organic compounds are indispensable tools in industry, which anticipate and recognize novel functional materials for the development of microelectronics. Thin film technology makes it possible to deposit ultra-thin functional material layers on a base substrate to form many active and passive micro-miniaturized components and devices such as solar cells, radiation sources, sensors, magnetic devices, bolometers, switching devices, photodiodes, digital versatile disk (DVD), flat panel display etc. Thus thin films play a dominant role in modern technology like opto-electronics, microelectronics etc. The study of surfaces and thin films overlaying them has been carried out for many years. But recently, it has become increasingly important in several fields of study. Thin film properties such as optical, electrical and magnetic properties are very much interested in research areas. Thin film properties are strong dependent on the method of deposition, the substrate materials, the substrate temperature, the rate of deposition, the background pressure etc. Specific application in modern technology demand tailor made film properties, for example, high optical reflection / transmission, hardness. adhesion, nonporosity, high mobility of charge carriers / insulating properties and chemical inertness, which are possible with a selection of suitable functional materials and deposition techniques. Various techniques used to deposit thin films and the material properties of MIO and its crystal structure are summarized with our results.
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Borghosh, Randa Moussa. "The Seven Sources of Information Technology and Its Role in the Development of Scientific Research." Al-Kitab Journal for Pure Sciences 7, no. 1 (July 20, 2023): 11–26. http://dx.doi.org/10.32441/kjps.07.01.p2.
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With the rapid technological development in various walks of life, Information Technology (IT) resources play an exceptional and key role in the advancement of the field of scientific research, as data sources and electronic content E-Data & E-Content transfer scientific and research resources in a digital (electronic) format to achieve communication and understanding. Among the researchers, the sources of the containers of storing electronic content in its various capacities and forms are indispensable for any researcher to save the research material in the short or long term, while the sources of software from operating systems, software and various applications play an essential role to help the researcher to collect the research material and see the continuous updates in the field of his research and facilitate his work whether before or during the writing of the research or even after writing the research and publishing and tracking its impact and impact, and these facilities provided to the researcher are more evident in the resources of electronics Microelectronics, which are represented by the size of the memory RAM & ROM and also CPU, and the researcher can only do the above through the sources of computers Computer HW of various sizes and types, network sources and communication technology (CT) systems, and all of the above sources of information technology are transmitted between users of End Users Information systems specialists, which represent the seventh source of information technology, namely the sources of specialized human resources for the system.
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Andreta, André, Luiz Fernando Lavado Villa, Yves Lembeye, and Jean Christophe Crebier. "A Novel Automated Design Methodology for Power Electronics Converters." Electronics 10, no. 3 (January 23, 2021): 271. http://dx.doi.org/10.3390/electronics10030271.
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This work proposes a methodology for designing power electronic converters called “Automatic Design for Manufacturing” (ADFM). This methodology proposes creating Power Converter Arrays (PCAs) using standardized converter cells. The approach is greatly inspired by the microelectronics integrated circuit design flow, power electronics building blocks, and multicell converters. To achieve the desired voltage/current specifications, the PCA conversion stage is made from the assembly of several Conversion-Standard Cells (CSCs) in series and/or parallel. The ADFM uses data-based models to simulate the behavior of a PCA with very little computational effort. These models require a special characterization approach to maximize the amount of knowledge while minimizing the amount of data. This approach consists of establishing an experiment plan to select the relevant measurements that contain the most information about the PCA technology, building an experimental setup that is capable of acquiring data automatically and using statistical learning to train models that can yield precise predictions. This work performed over 210 h of tests in nine different PCAs in order to gather data to the statistical models. The models predict the efficiency and converter temperature of several PCAs, and the accuracy is compared with real measurements. Finally, the models are employed to compare the performance of PCAs in a specific battery charging application.
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Novikov, Alexander S., Evgeniy A. Sudarev, and Andrei V. Mostovshchikov. "Copper ferrite obtaining from microelectronics waste." Bulletin of the Tomsk Polytechnic University Geo Assets Engineering 334, no. 12 (December 27, 2023): 134–42. http://dx.doi.org/10.18799/24131830/2023/12/4155.
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Relevance. The need to develop new methods for metal waste disposal. This direction, with the participation of various intensifying influences, refers to resource-saving, technological, minimizing the volume of capital costs for raw materials, production and subsequent sale. Aim. To obtain copper ferrite from iron and copper waste of microelectronics. Copper ferrite is a useful and highly demanded product in this branch of domestic industry, especially now, when many sanctions have been imposed on our country, including in terms of microelectronics. To study its magnetic properties and draw a conclusion about the possibility of its application. Objects. Samples of iron and copper waste in the form of plates, wire and shavings. Methods. Volumetric analysis, electron microscopy, X-ray phase analysis, study of magnetic susceptibility. Results. The authors have produced finely dispersed iron (III) oxide from iron-containing microelectronics waste. This oxide is used in electrical engineering as part of high-voltage resistors for grounding the neutral of networks, lithium-ion batteries, as a carrier of analog and digital information. In the radio engineering industry it is used as part of low-voltage resistors, high-frequency chokes, small-sized pulse transformers. The authors produced finely dispersed copper (II) oxide from copper-containing waste. This oxide is used in production of phosphors and dry batteries – in batteries with liquid cells as a cathode, with lithium as an anode and dioxalane mixed with lithium perchlorate as an electrolyte. In addition, it finds application as a p-type semiconductor, since it has a narrow bandgap of 1.2 eV, and manufacturing photovoltaic cells in solar panels. Copper ferrite was synthesized from the obtained oxides by sintering. Rings made of such alloy serve as a core in transformers. The part increases the magnetic field strength by several thousand times, making the devices transmit more power than they could with a non-ferrite core. Ferrite ring cores are found not only in transformers, but also in other electronics (e.g. magnetic memory).
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Lelit, Marcin, Mateusz Słowikowski, Maciej Filipiak, Marcin Juchniewicz, Bartłomiej Stonio, Bartosz Michalak, Krystian Pavłov, et al. "Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform." Materials 15, no. 4 (February 14, 2022): 1398. http://dx.doi.org/10.3390/ma15041398.
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The fabrication processes for silicon nitride photonic integrated circuits evolved from microelectronics components technology—basic processes have common roots and can be executed using the same type of equipment. In comparison to that of electronics components, passive photonic structures require fewer manufacturing steps and fabricated elements have larger critical dimensions. In this work, we present and discuss our first results on design and development of fundamental building blocks for silicon nitride integrated photonic platform. The scope of the work covers the full design and manufacturing chain, from numerical simulations of optical elements, design, and fabrication of the test structures to optical characterization and analysis the results. In particular, technological processes were developed and evaluated for fabrication of the waveguides (WGs), multimode interferometers (MMIs), and arrayed waveguide gratings (AWGs), which confirmed the potential of the technology and correctness of the proposed approach.
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Keller, William W., and Louis W. Pauly. "Innovation in the Indian Semiconductor Industry: The Challenge of Sectoral Deepening." Business and Politics 11, no. 2 (August 2009): 1–21. http://dx.doi.org/10.2202/1469-3569.1270.
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Seeking to build on related successes in other information technology sectors, the government of India has signaled its intent to transform the country's performance in microelectronics. Facing a young and expanding population, India needs to create manufacturing jobs in promising industries, and it needs to build out from its limited high-technology base. Semiconductors are foundational in this regard. Today, there is much discussion within India about the link between semiconductors and innovation in bio-electronics, alternative energy production and storage, and various micro- and nano-devices. The government's contemporary attempt to promote the building of infrastructure for manufacturing and applied research in semiconductors highlights reasons for hope. So too does the remarkable talent now available in the Indian diaspora. But significant impediments, especially in postsecondary and graduate-level education, must still be overcome if the necessary human capital is to be developed, equipped, and deployed effectively.
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Kowsalyadevi and N.V. Balaji. "INCEPTION TO SENSOR AND IoT TECHNOLOGY." International Journal of Information Technology, Research and Applications 2, no. 4 (December 12, 2023): 17–23. http://dx.doi.org/10.59461/ijitra.v2i4.61.
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The Internet of Things (IoT) is the recent research topic. The term “Internet of Things" (IoT) is a term that was conceived in 1999 by Kevin Ashton. The Internet of Things (IoT) is a network of physical objects or "things" that are embedded with devices, software, sensors, and networking in order to provide more value. By sharing data with the manufacturer, and by providing service operator or other devices that are linked, every single element is different. It is distinguishable due to its embedded computing system, but able to work together in the current internet. The IoT is being implemented in every hook and corner of industry and personal life of people. Governments are taking note and examining IoT from different perspectives. One aspect is how IoT system can help with performance, analytics and other tasks. Intelligence and decision making are the most important aspects. It combines various sensors and objects to interact directly with one another without human interference. This research paper focuses on the state of the art of IoT architecture. It has four significant layers, the Perception Layer, Network Layer, Middle Layer and Application Layer. The sensors can provide information on emerging health-care issues. Sensors have recently been considered as one of the most rapidly developing fields in physics, electronics, and biotechnology, and it is the one that has benefited the most from advances in individual microelectronics, optical, and computer sciences technologies.
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Borgarino, Mattia. "Circuit-Based Compact Model of Electron Spin Qubit." Electronics 11, no. 4 (February 10, 2022): 526. http://dx.doi.org/10.3390/electronics11040526.
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Today, an electron spin qubit on silicon appears to be a very promising physical platform for the fabrication of future quantum microprocessors. Thousands of these qubits should be packed together into one single silicon die in order to break the quantum supremacy barrier. Microelectronics engineers are currently leveraging on the current CMOS technology to design the manipulation and read-out electronics as cryogenic integrated circuits. Several of these circuits are RFICs, as VCO, LNA, and mixers. Therefore, the availability of a qubit CAD model plays a central role in the proper design of these cryogenic RFICs. The present paper reports on a circuit-based compact model of an electron spin qubit for CAD applications. The proposed model is described and tested, and the limitations faced are highlighted and discussed.
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HAN, Y. D., H. Y. JING, S. M. L. NAI, L. Y. XU, C. M. TAN, and J. WEI. "NANOMECHANICAL PROPERTIES OF A Sn–Ag–Cu SOLDER REINFORCED WITH Ni-COATED CARBON NANOTUBES." International Journal of Nanoscience 09, no. 04 (August 2010): 283–87. http://dx.doi.org/10.1142/s0219581x10006818.
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In the present study, 0.05 wt.% of Ni -coated multi-walled carbon nanotubes ( Ni -CNTs) were successfully incorporated into the 95.8Sn–3.5Ag–0.7Cu solder using the powder metallurgy technique, to synthesize a new lead-free composite solder. Its mechanical property (in terms of hardness) was investigated at room temperature using the nanoindentation method. The results revealed that the nanoindentation hardness increased by 14.3% with the incorporation of 0.05 wt.% of Ni -coated CNTs. This observation is in good agreement with the microhardness test results. Moreover, the addition of Ni -CNTs improved the creep resistance of the composite solder. The test results established that nanotechnology coupled with composite technology in electronics solders can result in the enhancement of mechanical properties. These advanced interconnect materials will thus benefit the microelectronics assembly and packaging industry.
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Sanzaro, Mirko, Fabio Signorelli, Paolo Gattari, Alberto Tosi, and Franco Zappa. "0.16 µm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise." Sensors 18, no. 11 (November 3, 2018): 3763. http://dx.doi.org/10.3390/s18113763.
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Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 µm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs.
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Shant, Valesyan. "Effect of the ageing on the dissipative properties of getinacks subjected to repeated static loading." World Journal of Engineering 11, no. 6 (December 1, 2014): 589–96. http://dx.doi.org/10.1260/1708-5284.11.6.589.
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The effect of ageing on the dissipative properties of getinacks subjected to repeated static loading has been investigated. Specimens were tested at the age of 1, 4, and 8 years. The approximation of experimental data is done, and the energy of dissipation is calculated. Based on the investigation of getinacks manufactured by the technology of regulated thermo-pressing, this technology can be recommended for the manufacturing of appropriate products.The results of experimental investigation of the effect of temperature field on the dissipative properties of layered getinacks widely applicable in electrical manufacturing, electronics and microelectronics are considered in this paper. The approximation of the experimentally obtained dependences between σ and ε for the loading (→) and unloading (←) parts of the hysteresis loop are calculated and plotted. The factor of energy dissipation is defined. Estimated that the temperature field affects the dissipative properties of the layered getinacks and that effect is depending on the value of applied load cyclically acting on the material.
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Magonski, Zbigniew. "Combustion Heat Meter." Journal of Microelectronics and Electronic Packaging 14, no. 3 (July 1, 2017): 100–107. http://dx.doi.org/10.4071/imaps.0531.
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Abstract In Memoriam—In memory of Dr. Zbigniew Magonski, a talented electronic engineer and inventor, was born in Glubczyce, Poland in 1950 and passed away in Cracow, Poland in 2017. He received M.Sc. degree in Solid State Technology from the Technical University of Wrocław, Poland in 1973, and PhD degree from the AGH University of Science and Technology, Cracow, Poland in 2000. For 15 years, he was with the R&D Center for Hybrid Microelectronics, Cracow Poland. At that time, his interest was focused on hybrid A/D, D/A converters also on DC HV power converters. Later, for 28 years, he was with the Department of Electronics, AGH University of Science and Technology, Cracow, Poland. His research interests covered ceramic microfluidic systems, hydrocarbon combustors, and high-temperature solid oxide fuel cells. In 1994–1995, he was with Summit Technology, Massachusetts, involved in a project relating to HV supplying of excimer lasers. He was a member of IMAPS US Chapter, the author of 13 patents and almost 50 technical papers connected with electronic technology. He was a caring husband and father and a good friend of many of us. We will miss you, Zbyszek. This article presents a proposal of a thermal instrument intended for the evaluation of heat energy of fluid fuels. Two thermal devices the flow meter and the combustor are the basic components of the instrument. The meter maintains a constant temperature in the vicinity of the combustion zone. The amount of heat energy in the fuel is calculated as the ratio of the electric power change expressed in Watts to the change of fuel supply delivered to the combustor within a time period of 1 s. The method enables a direct evaluation of fuel energy expressed in Joules per unit of mass or volume. For some applications, the meter may be a good alternative for a bulky bomb calorimeter.
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Zhang, Ruolei. "Application and Development Trend of 5G Communication Technology in Microelectronics." International Journal of Computer Science and Information Technology 2, no. 1 (March 25, 2024): 397–402. http://dx.doi.org/10.62051/ijcsit.v2n1.42.
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This study delves into the synergistic relationship between 5G communication technology and microelectronics, and how it shapes the future of the scientific and technological landscape. Through a comprehensive blend of theoretical analysis and empirical research, we examine how 5G technology propels the advancement of microelectronics, and vice versa. Our findings reveal a symbiotic relationship between the two, driving the overall progress of the electronic information industry. The distinctive features of 5G technology—high speed, minimal delay, and extensive connectivity—demand that microelectronic chips exhibit superior processing capabilities and energy efficiency. This, in turn, fuels the relentless innovation in microelectronics. Simultaneously, advancements in microelectronics bolster the performance and cost-effectiveness of 5G equipment, facilitating its widespread adoption. Furthermore, this paper explores the convergent trends in 5G communication and microelectronics, along with the challenges and strategies for their integrated growth. It offers insights into potential avenues for innovation and development in these intertwined domains.
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Pandiev, Ivailo M., and Mariya P. Aleksandrova. "Dynamic FPAA-based Mixed-Signal Processing Circuit for Thin-Film CdTe/Lead-Free Perovskite Photodetectors." Elektronika ir Elektrotechnika 27, no. 2 (April 29, 2021): 22–30. http://dx.doi.org/10.5755/j02.eie.28751.
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New photodetector structure combining thinned CdTe film with lead-free perovskite photoelectric film was produced and investigated. This setting of the CdTe thickness results in photodetector parameters’ competitiveness to the state-of-the-art in the field of advanced photoelectric materials. The device shows a promising sensitivity of ~40 μA/W, maximum responsivity of 10.6 mA/W at 460 nm, equal rise and fall times of 30 ms, and high linearity (maximum linearization error is less than 0.6 %). However, the optoelectronic performance of CdTe/lead-free perovskite structures integrated with signal processing circuit remains unexplored. For this purpose, Field Programmable Analogue Array (FPAA)-based mixed-signal processing circuit is developed for pulse width modulated electrical signal with duty cycle controlled by the illumination degree of the detecting photoelement. This novel approach guarantees a smooth change of the electrical output at a smooth change of the input illumination between the light and dark switching states and can be practically applied as a precise position detector of moving objects. The paper represents a synergistic connection between microelectronics, electronics, and signal technology.
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Djordjevic, Ivana, Marija Radmilovic-Radjenovic, and Zoran Petrovic. "Modeling of a breakdown voltage in microdischarges." Chemical Industry 63, no. 4 (2009): 293–99. http://dx.doi.org/10.2298/hemind0904293d.
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Non-equilibrium plasmas have been used as one of the principal technologies for development of microelectronics and they are the basis for the development of new generations of nano-electronics devices required for 65 and 40 nm technologies. Microdischarges recently have become more common in everyday life. Technology of plasma etching has enabled us to develop such discharges and the field of microdischarges has grown into the most interesting field of the physics of collisional non-equilibrium plasmas. Recently, an effort to fabricate microplasma sources that can be integrated with other MEMS devices to form larger Microsystems has been made. Plasma-based microsystems can find application in bio-microelectro- mechanical system (bio-MEMS) sterilization, small-scale materials processing and microchemical analysis systems. However, integrability requires not only a size reduction, but also an understanding of the physics governing the new small-scale discharges. In this paper, we have performed modeling of a breakdown voltage by using Particle-in-Cell/Monte Carlo collision (PIC/MCC) code taking into account the secondary electron emission due to a high field.
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Bhandari, Pratap, Basanta Pancha, Yam Krishna Poudel, Ajay Kumar Lal, Madan Raj Chapagain, Narayan Achary, and Dayasagar Niraula. "Application of Particle Swarm Optimization (PSO) Algorithm for PID Parameter Tuning in Speed Control of Brushless DC (BLDC) Motor." Journal of Physics: Conference Series 2570, no. 1 (August 1, 2023): 012018. http://dx.doi.org/10.1088/1742-6596/2570/1/012018.
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Abstract With the advancement in the technology of power electronics and microelectronics, the use of brushless DC motor has been increasingly expanded. The numerous benefits of brushless DC motor are one of the prime factors that has helped in the rapid expansion in the use of BLDC motor. Simple operation and maintenance, compact volume, light weight, energy conservation, high efficiency, easy regulation of speed and high reliability are some the merits that promotes the increasing use of BLDC motor. Its current application is observed in almost all the sectors of industrial control. BLDC motor drivers are most widely used in motion control applications. With the increasing necessity of designing effective control strategy, the use of electronically commuted brushless DC motors is increasing rapidly in various industrial applications. For this purpose, cheap and efficient speed regulator is needed for the motor. Proper tuning of PID can also be one of the ways of controlling BLDCM. This paper adopts intelligent controlling technique for the reduction of torque ripple, settling time and overshoot through the use of MATLAB and SIMULINK.
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Hampden-Smith, Mark J., and Toivo T. Kodas. "Copper Etching: New Chemical Approaches." MRS Bulletin 18, no. 6 (June 1993): 39–45. http://dx.doi.org/10.1557/s088376940004731x.
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There is a tremendous demand for improved performance and speed in consumer electronics that is likely to continue as new applications and developments occur. This demand necessitates a reduction in the critical dimensions and an increase in the density of devices in microelectronic circuits. As a result, new materials must be considered for integration into microelectronics technology. In particular, the metal wiring or interconnects that connect different components in silicon-based semiconductor devices is a subject of great interest. As the dimensions of transistors shrink below the 0.5 μm level, their speed will become limited by the delays in the existing interconnect material, Al-Si-Cu alloy (p ~ 3 μΩ cm). Therefore, to avoid problems associated with RC (“resistance/capacitance”) time delays and voltage drops, it will be necessary to construct interconnections of materials that possess lower resistivities, resistance to electromigration and hillock formation, and resistance to diffusion into other materials (see Table I).A number of materials are possible candidates to replace the Al-Si-Cu alloy, including W, Ag, Au, and Cu. Tungsten has excellent resistance to electromigration and hillock formation, but has higher resistivity compared with the Al-Si-Cu alloy. Thus, applications of W are likely to be found where short interconnection distances are necessary. Silver has the lowest resistivity of all metals, but is easily corroded and diffuses rapidly into many materials used in semiconductor devices. However, some specific applications for silver are viable, such as the formation of contacts on ceramic superconductors. Gold has a lower resistivity than the Al-Si-Cu alloy and is inert to chemical corrosion. As a result Au is used where device reliability is the primary concern-for example, for wiring in GaAs-based semiconductors and electrical contacts in packaging.
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Khan, Asif. "(Invited) Ferroelectric Field-Effect Transistors as High-Density, Ultra-fast, Embedded Non-Volatile Memories." ECS Meeting Abstracts MA2022-02, no. 15 (October 9, 2022): 805. http://dx.doi.org/10.1149/ma2022-0215805mtgabs.
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Ferroelectric field-effect transistors (FEFETs) are receiving significant attention from the microelectronics community for next-generation memory technologies, especially as embedded non-volatile elements for data-centric applications. The main attractive features of FEFETs are that write energy and speed of FEFETs are within an order of magnitude of respective metrics for SRAMs (FEFET ~1 fJ and 1-10 ns vs. SRAM: <1 fJ and <1 ns), all the while requiring a significantly smaller cell size (FEFET 50-60F2 vs. SRAM 120-150F2) and close-to-zero standby leakage power – provided that FEFETs are integrated at the same advanced technology nodes as SRAMs [1]. In this talk, we will discuss the potential path for FEFET toward fulfilling this vision, by addressing the outstanding technological challenges: ultra-fast read-after write, reliability, voltage scaling and variation. To that end, our recent exposition on the trap and reliability physics of FEFETs will highlighted. We will highlight, based on newly developed experimental schemes, how the simultaneous capture and emission of electrons and holes in write cycles occur at the interface and the grain boundaries in the time domain, where in the band-diagram, these traps (acceptors and donors) are located and how exactly they result in the degradation of the read speed and reliability with continued write cycling. Based on these insights, we move on show how engineering the interfacial layer and the ferroelectric grain structure can enable ultra-fast read-after write and write voltage and dramatic improvements in reliability and variation, towards achieving a high-density, ultra-high speed memory technology. This research is supported by the National Science Foundation, the Defense Advanced Research Program Agency (DARPA), the Semiconductor Research Corporation (SRC) - Global Research Collaboration (GRC) program, the Applications and Systems-Driven Center for Energy-Efficient Integrated Nano Technologies (ASCENT), one of six centers in the Joint University Microelectronics Program (JUMP), a SRC program sponsored by the DARPA, and an Intel Rising Star award. [1] Mikolajick, T., Schroeder, U. & Slesazeck, S. The past, the present, and the future of ferroelectric memories. IEEE Trans. Electron Devices 67, 1434–1443 (2020). [2] Asif Islam Khan, Ali Keshavarzi, and Suman Datta. “The future of ferroelectric field-effect transistor technology." Nature Electronics 3.10 (2020): 588-597.
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Zhu, Bo. "Microelectronics innovation and implementation in intelligent transportation systems." Theoretical and Natural Science 9, no. 1 (November 13, 2023): 208–13. http://dx.doi.org/10.54254/2753-8818/9/20240751.
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Under the background of urbanization and rapid development of transportation, the innovation of intelligent transportation system has become the key to improving traffic efficiency, relieving traffic pressure, and solving traffic problems. With the continuous progress of microelectronics technology, its application in the field of intelligent transportation is becoming more and more eye-catching. This paper focuses on the innovation and realization of micro-electronic technology in intelligent transportation system, and discusses the application of micro-electronic technology in intelligent navigation, intelligent parking, traffic flow optimization, etc. Through a literature review approach, this study demonstrates how microelectronics technology can drive the development of intelligent transportation systems to improve the efficiency and sustainability of urban transportation. The research results show that microelectronics technology not only brings revolutionary changes to the field of intelligent transportation, but also provides accurate positioning and navigation functions in intelligent navigation systems, realizes more efficient parking process management in intelligent parking systems, and plays a key role in traffic flow optimization. Microelectronic technology has wide application prospects and a positive social influence in the field of intelligent transportation.
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Bisht, Devyani, and Dr Homdutt Sharma. "Lasers in Defence." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (May 31, 2023): 4177–88. http://dx.doi.org/10.22214/ijraset.2023.52464.
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Abstract: The development and usage of laser technology in fields such as defence, law enforcement, communication, and defence have had a major impact on the law enforcement sector. The idea of Light Amplification by Stimulated Emission of Radiation (LASER) was conceived in 1957, but it wasn't until 1960 that Theodore H. Maiman built the first practical application of the technology. In addition to its high coherence and intensity, laser illumination is also distinguished by its spatial coherence, enabling light pulses on the femtosecond timescale. It finds use in various disciplines, including holography, the space sciences, spectroscopy, medicine, microelectronics, power electronics, industrial engineering, and even directed energy weaponry. Laser target markers and beam riders are the most common methods for accurately controlling LGW towards ground objects. Recent advances in laser technology are intensively investigated for their potential use in target indicators and range finders. There has been an increase in the usage of lasers in recent years, with several new services in fields as diverse as commerce, industry, medicine, science, technology, and even the military. Applications like range finders, target designators, power beamers, LIDARs, and long-range, high-speed, secure communication systems have the potential to completely alter the face of combat. India's laser R&D centres are working on various laser systems and their supporting components and materials for use in directed energy applications. Laser crosslinks are a technology that can maintain data speeds in the tens of gigabits, and they give higher bit rates with decreased bit error rates owing to their small wavelengths.
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Das, Rabindra, J. M. Lauffer, and F. D. Egitto. "Versatile Z-Axis Interconnection for High Performance Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001033–50. http://dx.doi.org/10.4071/2013dpc-wa13.
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The demand for high-performance, lightweight, portable computing power for next generation packaging is driving the industry toward miniaturization at a rate not seen before. Electronic packaging is evolving to meet the demands of higher functionality in ever smaller packages. To accomplish this, new packaging needs to be able to integrate more dies with greater function, higher I/O counts, smaller die pad pitches, and greater heat densities, while being pushed into smaller and smaller footprints. New packaging designs are emerging that require joining (stacking) of multiple packages, joining of different size packages, and flexibility and/or rigidity to accommodate requirements related to size, weight, and complexity. This paper presents a novel Z-axis interconnect approach for extending performance beyond the limits imposed by traditional approaches. Specifically, metal-to-metal z-axis electrical interconnection among substrates (sub-composites) of the same or varying size, or among flexible and rigid elements (rigid-flex), to form a single structure is described. The structure employs an electrically conductive medium to interconnect thin coreless substrates. The substrates are built in parallel, aligned, and laminated to form a variety of multilayer, high density structures including rigid, rigid-rigid, rigid-flex, stacked packages, or RF substrates. The Z-interconnect based structures offer many advantages over more conventional build-up technologies, for example, an increase in metal layer counts without the cumulative yield loss of sequential (build up) processing, placement of flex elements into any layer of the substrate, the opportunity for multiple flex layers within a rigid-flex substrate, the ability to connect multiple multilayer substrates of varying size, and the ability to connect between any two arbitrary metal layers within the rigid region without the use of plated through holes (PTHs), allowing for increased wiring density, and reduction or elimination of via stubs that cause signal attenuation, In addition, multilayer rigid-flex packages for a variety of applications are being developed. Several classes of flexible materials that can be used to form high-performance flexible packaging are discussed. Materials, including polyimides, PTFE, liquid crystal polymer (LCP), have been used to develop multilayer rigid-flex packages. The process allows fabrication of Z-interconnect conductive joints having diameters in the range of 55–500 microns. Via or component pitches down to 150 microns have been demonstrated. The processes and materials used to achieve smaller feature dimensions, satisfy stringent registration requirements, and achieve robust electrical interconnections are discussed. A number of RF structures have been designed and built with Z-interconnect technology, affording the flexibility to place wide signals, narrow signals and grounds and clearances only where needed. Electrically, S-parameter measurements revealed low loss at multi-gigahertz frequencies and the insertion loss for narrow, short lines and wide, long lines are similar. The electrically conductive adhesive used to form Z-interconnect shows good signal transmission to 25GHz. Z-interconnect substrates provide unique solutions for next generation complex packaging. Collectively, the results suggest that Z-interconnect technology may be attractive for a range of applications, not only where miniaturization is required, such as consumer products, but also in high performance large-area microelectronics such as supercomputers, radio frequency structures, etc.
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Wu, Nengtao, Zhiheng Xing, Shanjie Li, Ling Luo, Fanyi Zeng, and Guoqiang Li. "GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices." Semiconductor Science and Technology 38, no. 6 (April 25, 2023): 063002. http://dx.doi.org/10.1088/1361-6641/acca9d.
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Abstract Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.
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Lu, Y. C., and J. L. Lu. "Work and stress among supervisors in selected manufacturing industries." European Psychiatry 26, S2 (March 2011): 1591. http://dx.doi.org/10.1016/s0924-9338(11)73295-3.
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ObjectiveThis study looked at sources of work stress among supervisor. s in manufacturing industriesAimThis research aims to elucidate data on occupational stress among supervisors in manufacturing industries and associated risk factors at work.MethodThe sample consisted of 23 establishments and from this, 47 supervisors were taken, and interviewed using survey questionnaires and focus group discussions.ResultsAmong the 47 supervisors, 51% were from garments industry while 49% from electronics industry, and 66% were women. Work among supervisors was reported to be challenging and stimulating but regular upgrading of skills was needed. Based on the FGDs conducted among the supervisors, the issues in the workplace included information overload, keeping abreast with developments in their fields of expertise, the need to be multiskilled, stress brought about by information technology, the new pedagogy in the workplace affecting occupational stress, stringent and the need for new organizational strategies. On logistic regression, occupational stress among supervisors was found to be significantly associated with heavy load stress, mental requirements of work, massive technical/ office work, and the use of microelectronics equipment needing concentration and literacy in IT, and regular upgrading of skills.ConclusionBased on these findings, we can conclude that occupational factors play a significant role in influencing the stress among supervisors.
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Peca, Ludmila. "The power of eLearning from promises to practices applied in engineering." Journal of Social Sciences 6, no. 1 (April 2023): 69–80. http://dx.doi.org/10.52326/jss.utm.2023.06(1).07.
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Significant strides are being made in the development of Information and Communication Technology (ICT) by infusing ICT as a tool for learning and education. Expansive and visionary programs are initiated meant to transform university education. The latter have jointly contributed to the considerable progress of the renewed curricula development and implementation, including the hybrid learning model for a number of key courses such as mathematics, science, computer networks, programming and ICT. Sectoral digitalization is implemented due to the digitalization strategies and initiatives. Computer and science labs support e-learning and of course the training and retraining of the teaching staff for new curricula (study-programmes), new pedagogical methodologies and assessment strategies. In general terms, the study-programmes have been renewed/redesigned to become more relevant fulfilling students’ needs, while the specific outcomes are based less on knowledge and content and more on learning skills and competences, i.e. real-world applicable tasks/activities. The paper describes the study case of the presentation format for the Computer Networks course, which can be found in the study plan/syllabus of several study-programmes at the Faculty of Computers, Informatics and Microelectronics (FCIM) and the Faculty of Electronics and Telecommunications (FET) of the Technical University of Moldova (TUM).
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Abdelkrim, Bouanane, Nerziou Madani, Yahiaoui Merzoug, and Raouti Driss. "Universal phase shifter regulator system modeling with robust GPC using neural networks for compensation power in transmission line." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 3 (September 1, 2022): 1448. http://dx.doi.org/10.11591/ijpeds.v13.i3.pp1448-1458.
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Electricity consumption is increasing gradually and this trend will continue in the future. In addition, rapid network control systems using the resources offered by power electronics and control microelectronics have been recently studied and developed, and are currently in normal application for some, for others, in pilot applications or as prototypes. This paper attempts to show that these systems are referred to by the general acronym flexible alternative current transmission systems (FACTS) similarly dethroned the traditional systems while offering better solutions and solving the energy quality problem such as the hybrid system (unified power flow controller (UPFC), or universal phase shifter regulator (UPSR)) which opens up new perspectives for more efficient operation of networks by continuous and rapid action on the various parameters of the network (voltage, phase shift, and impedance); thus, the power transits will be better controlled and the voltages better held, which will make it possible to increase the stability margins or tend towards the thermal limits of the lines. In this work, we used a classic control (PI-decoupled) and others while offering more flexibility of control thanks to the development of strategies identification/control based on generalized predictive control (GPC) with neural network to ensure robust control with advanced algorithms.