Relevant bibliographies by topics / Technology / Electronics / Optoelectronics

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Technology / Electronics / Optoelectronics'

Author: Grafiati
Published: 4 June 2021
Last updated: 27 July 2025

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Journal articles on the topic "Technology / Electronics / Optoelectronics"

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Kausar, Ayesha, Ishaq Ahmad, Malik Maaza, M. H. Eisa, and Patrizia Bocchetta. "Polymer/Fullerene Nanocomposite for Optoelectronics—Moving toward Green Technology." Journal of Composites Science 6, no. 12 (2022): 393. http://dx.doi.org/10.3390/jcs6120393.

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Optoelectronic devices have been developed using the polymer/fullerene nanocomposite, as focused in this review. The polymer/fullerene nanocomposite shows significant structural, electronics, optical, and useful physical properties in optoelectronics. Non-conducting and conducting polymeric nanocomposites have been applied in optoelectronics, such as light-emitting diodes, solar cells, and sensors. Inclusion of fullerene has further broadened the methodological application of the polymer/fullerene nanocomposite. The polymeric matrices and fullerene may have covalent or physical interactions fo
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Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this
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Coffa, Salvatore, and Leonid Tsybeskov. "Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 16–19. http://dx.doi.org/10.1557/s0883769400030219.

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The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the deve
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Avouris, Phaedon. "Carbon Nanotube Electronics and Optoelectronics." MRS Bulletin 29, no. 6 (2004): 403–10. http://dx.doi.org/10.1557/mrs2004.123.

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AbstractCarbon nanotubes (CNTs) are one-dimensional nanostructures with unique properties. This article discusses why CNTs provide an ideal basis for a future carbonbased nanoelectronic technology, focusing specifically on single-carbon-nanotube fieldeffect transistors (CNT-FETs). Results of transport experiments and theoretical modeling will be used to address such issues as the nature of the switching mechanism, the role of the metal contacts, the role of the environment, the FET scaling properties, and the use of these findings to produce high-performance p-type, n-type, and ambipolar CNT-F
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Xie, Ling-Hai, Su-Hui Yang, Jin-Yi Lin, Ming-Dong Yi, and Wei Huang. "Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 2000 (2013): 20120337. http://dx.doi.org/10.1098/rsta.2012.0337.

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Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical wa
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Torres-Costa, Vicente. "Nanostructures for Photonics and Optoelectronics." Nanomaterials 12, no. 11 (2022): 1820. http://dx.doi.org/10.3390/nano12111820.

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As microelectronic technology approaches the limit of what can be achieved in terms of speed and integration level, there is an increasing interest in moving from electronics to photonics, where photons and light beams replace electrons and electrical currents, which will result in higher processing speeds and lower power consumption [...]
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Kuo, Yue. "(Invited) Plasma-Based Thin Film Technology in Fabrication of Nano- to Giga-Sized Electronics." ECS Meeting Abstracts MA2022-02, no. 30 (2022): 1106. http://dx.doi.org/10.1149/ma2022-02301106mtgabs.

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This talk is presented to honor Professor Noel Buckley who has made many important contributions in compound semiconductors, copper thin film deposition, batteries, and other topics critical to the manufacture of modern optoelectronics. He is also a good friend, colleague, and collaborator for 3 decades. Plasma technology has been broadly used in the mass production of modern electronics varying from nano-sized devices in ICs to giga-dimension flat panel displays. It is especially critical to the preparation of thin films with well-controlled properties, geometry, and reliability. In this talk
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Ho, Johnny C. "(Invited) Flexible Electronic Devices Based on Low-Dimensional Nanomaterials and Their Integration Technologies." ECS Meeting Abstracts MA2024-02, no. 35 (2024): 2473. https://doi.org/10.1149/ma2024-02352473mtgabs.

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Flexible electronic technology has broken through the inherent limitations of traditional silicon-based optoelectronics, possessing characteristics such as lightweight, transparency, flexibility, portability, and functional reconfigurability, providing innovative leadership for technological changes in the post-Moore era, such as the Internet of Things, artificial intelligence, and healthcare. Among numerous material systems, single crystal or highly crystalline inorganic materials are more easily compatible with semiconductor processes, possessing superior electrical properties, stability, an
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Sotor, Jarosław, Krzysztof Abramski, Arkadiusz Antończak, et al. "Laser and Fiber Electronics Group." Photonics Letters of Poland 11, no. 2 (2019): 38. http://dx.doi.org/10.4302/plp.v11i2.901.

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The Laser & Fiber Electronics Group (LFEG) constitutes a team of young, skilled and ambitious researchers, doctoral candidates and students. The Group possesses great experience in applied optoelectronics and laser technology. Currently, it conducts research in several areas,mostly focusing on: ultrashort laser pulse generation using novel materials, development of pulsed fiber laser sources ranging from visible to mid-infrared, development of compact mid-infrared optical frequency combs, laser spectroscopy techniques, laser vibrometry, solid-state lasers, advanced analog and digital elect
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Jagadish, Chennupati. "(Dielectric Science &Technology Thomas D. Callinan Award) Semiconductor Nanostructures for Optoelectronics and Energy Applications." ECS Meeting Abstracts MA2023-01, no. 20 (2023): 1503. http://dx.doi.org/10.1149/ma2023-01201503mtgabs.

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Semiconductors have played an important role in the development of information and communications technology, solar cells, solid state lighting. Nanowires are considered as building blocks for the next generation electronics and optoelectronics. In this talk, I will present the results on growth of nanowires, nanomembranes and microrings and their optical properties. Then I will discuss theoretical design and experimental results on optoelectronic devices. In particular I will discuss nanowire and micro-ring lasers and integration of nanowires and microrings. I will also present the results on
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Dissertations / Theses on the topic "Technology / Electronics / Optoelectronics"

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Otto, Ernst. "Development of superconducting bolometer device technology for millimeter-wave cosmology instruments." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:30a1103a-ea7a-4b08-ba92-665cbd9740e0.

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The Cold-Electron Bolometer (CEB) is a sensitive detector of millimeter-wave radiation, in which tunnel junctions are used as temperature sensors of a nanoscale normal metal strip absorber. The absorber is fed by an antenna via two Superconductor-Insulator-Normal metal (SIN) tunnel junctions, fabricated at both ends of the absorber. Incoming photons excite electrons, heating the whole electron system. The incoming RF power is determined by measuring the tunneling current through the SIN junctions. Since electrons at highest energy levels escape the absorber through the tunnel junctions, it cau
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Bandyopadhyay, Avra Sankar. "Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic Devices." Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752376/.

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In this work, we explored one material from the broad family of 2D semiconductors, namely WSe2 to serve as an enabler for advanced, low-power, high-performance nanoelectronics and optoelectronic devices. A 2D WSe2 based field-effect-transistor (FET) was designed and fabricated using electron-beam lithography, that revealed an ultra-high mobility of ~ 625 cm2/V-s, with tunable charge transport behavior in the WSe2 channel, making it a promising candidate for high speed Si-based complimentary-metal-oxide-semiconductor (CMOS) technology. Furthermore, optoelectronic properties in 2D WSe2 based pho
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Wen, Xiaonan. "Piezotronics as an electromechanical interfacing technology for electronic and optoelectronic applications." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53844.

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Innovation on human-machine interfacing technologies is critical for the development of smart, multifunctional and efficient electronic/optoelectronic systems. The effect of piezotronics is a newly started field of study, which utilizes piezoelectric polarization that is mechanically induced inside a piezoelectric semiconductor to regulate electron transport across electronic contact interfaces. With the concept coined in 2006, many efforts have been contributed to studying the underlying physical mechanism of this effect as well as demonstrating various applications based on single nanowire p
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Huang, Chih-Jung. "Opto-electronic class AB microwave power amplifier using photoconductive switch technology." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4458.

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Thesis (Ph.D.)--University of Missouri-Columbia, 2006.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (April 26, 2007) Vita. Includes bibliographical references.
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Jin, Michael Sungchun. "Heterogeneous integration technology for hybrid optoelectronic and electronic device and module fabrication /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1998. http://wwwlib.umi.com/cr/ucsd/fullcit?p9912846.

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Crawford, D. L. "An inversion channel material system - toward an integrated technology : Characterisation of both optoelectronic and electronic devices fabricated from an identical inversion channel material structure and with applications in monolithic OEIC technologies." Thesis, University of Bradford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233672.

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Witte, Christian. "Micromanipulation in microfluidics using optoelectronic and acoustic tweezing." Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6391/.

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The thesis introduces a concept for a unified platform that enables the use of acoustic and electric fields for particle manipulations in microfluidic environments. In particular, optoelectronic tweezing (OET), also known as light induced dielectrophoresis is fused with acoustic tweezing, also known as acoustophoresis, on a versatile system. The system can be divided into two individual physical units. The first one represents the OET unit which integrates light induced electric fields into a robust microfluidic chip. The OET chip not only operates as a device for electric field generation but
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Thacker, Hiren Dilipkumar. "Probe Modules for Wafer-Level Testing of Gigascale Chips with Electrical and Optical I/O Interconnects." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/11597.

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The use of optical input/output (I/O) interconnects, in addition to electrical I/Os, is a promising approach for achieving high-bandwidth, chip-to-board communications required for future high-performance gigascale chip-based systems. While numerous efforts are underway to investigate the integration of optoelectronics and silicon microelectronics, virtually no work has been reported relating to testing of such chips. The objective of this research is to explore methods that enable wafer-level testing of gigascale chips having electrical and optical I/O interconnects. A major challenge in achi
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Hemaprabha, E. "Cryomilled Group IV elements (Silicon & Germanium) for optoelectronic applications." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5473.

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Group IV elements such as silicon and germanium are elemental semiconductors and lead to the evolution of modern electronic applications. Synthesis of contamination-free nanoparticles of these materials in bulk quantity becomes an important aspect because the contaminations could substantially change the electrical properties. With this in motivation, the thesis is focused on synthesis of nanoparticles of Si and Ge by cryomilling. Following this we have explored the optoelectronic applications. Thesis is organized in eight chapters and a brief description of each chapter is given here. Chapter
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Murali, Krishna. "Engineering van der Waals Heterojunctions for Electronic and Optoelectronic Device Applications." Thesis, 2020. https://etd.iisc.ac.in/handle/2005/4778.

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Efficient preparation and characterization of layered materials and their van der Waals heterojunctions lay the foundation for various opportunities in both fundamental studies and device applications. The vast library of 2D materials displays a range of electronic properties, including conductors, semiconductors, insulators, semimetal, and superconductors, and shows strong light-matter interaction. The fact that each layer in the layered material is bonded via van der Waals interaction opens up the possibility of assembling different layers arbitrarily without any consideration over the
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Books on the topic "Technology / Electronics / Optoelectronics"

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service), SpringerLink (Online, ed. Integrated silicon optoelectronics. 2nd ed. Springer, 2010.

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Li, Quan. Liquid crystals beyond displays: Chemistry, physics, and applications. John Wiley & Sons, Inc., 2012.

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Division, Electronics and Electrical Engineering Laboratory (National Institute of Standards and Technology) Optoelectronics. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1998.

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J, Smith Annie, ed. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 2000.

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J, Smith Annie, ed. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1999.

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Electronics and Electrical Engineering Laboratory (National Institute of Standards and Technology). Optoelectronics Division. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1999.

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J, Smith Annie, ed. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1999.

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J, Smith Annie, ed. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1998.

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J, Smith Annie, ed. Bibliography of the NIST Optoelectronics Division. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1998.

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Kasunic, Keith. Optical systems engineering. McGraw-Hill Professional, 2011.

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Book chapters on the topic "Technology / Electronics / Optoelectronics"

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Avouris, Ph, M. Radosavljević, and S. J. Wind. "Carbon Nanotube Electronics and Optoelectronics." In NanoScience and Technology. Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-28075-8_9.

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Asbeck, P. M. "Heterojunction Bipolar Transistor Technology for High-Speed Integrated Circuits." In Picosecond Electronics and Optoelectronics. Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_5.

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Castagne, R., and G. Nuzillat. "GaAs Integrated Circuit Technology for High Speed Analog and Digital Electronics." In Picosecond Electronics and Optoelectronics. Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_4.

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Abe, M., T. Mimura, K. Kondo, and M. Kobayashi. "Progress and Challenges in HEMT LSI Technology." In Picosecond Electronics and Optoelectronics II. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72970-6_36.

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Etemad, S., W.-S. Fann, P. D. Townsend, G. L. Baker, and J. Jackel. "NLO of Conjugated Polymers: Progress in Science and Prospects for Technology." In Conjugated Polymeric Materials: Opportunities in Electronics, Optoelectronics, and Molecular Electronics. Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2041-5_25.

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Li, Er-Ping, and Zhong Lin Wang. "Maxwell’s Equations for Advanced Electronic/Optoelectronic Devices." In NanoScience and Technology. Springer Nature Switzerland, 2024. https://doi.org/10.1007/978-3-031-75786-0_4.

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Lambrechts, Wynand, and Saurabh Sinha. "Electronic Warfare Optoelectronic Receiver Fundamentals: Applications and Research Opportunities." In Signals and Communication Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47403-8_4.

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Lambrechts, Wynand, and Saurabh Sinha. "Electronic Countermeasures and Directed Energy Weapons: Innovative Optoelectronics Versus Brute Force." In Signals and Communication Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47403-8_5.

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Rossi, Fausto. "New Frontiers of Electronic and Optoelectronic Device Physics and Technology." In Theory of Semiconductor Quantum Devices. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10556-2_11.

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Tiwari, Udit, and Sahab Dass. "Moisture Stable Soot Coated Methylammonium Lead Iodide Perovskite Photoelectrodes for Hydrogen Production in Water." In Springer Proceedings in Energy. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63916-7_18.

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AbstractMetal halide perovskites have triggered a quantum leap in the photovoltaic technology marked by a humongous improvement in the device performance in a matter of just a few years. Despite their promising optoelectronic properties, their use in the photovoltaic sector remains restricted due to their inherent instability towards moisture. Here, we report a simple, cost-effective and highly efficient protection strategy that enables their use as photoelectrodes for photoelectrochemical hydrogen production while being immersed in water. A uniform coating of candle soot and silica is develop
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Conference papers on the topic "Technology / Electronics / Optoelectronics"

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Zha, Jiajia, Haoxin Huang, and Chaoliang Tan. "Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040863.

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Siah, Kok Siong, Robin Basu, Andreas Distler, et al. "Aerosol Jet Printed Encapsulation for Optoelectronics: A Study of Line Morphology." In 2024 IEEE 26th Electronics Packaging Technology Conference (EPTC). IEEE, 2024. https://doi.org/10.1109/eptc62800.2024.10909866.

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Asai, Kazuyoshi, and Tadao Ishibashi. "GaAs MESFET and HBT Technology in Picosecond Electronics." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.tt139.

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Ultra-high-speed signal processing with a bit rate of over 10 Gbit/s will soon be available in GaAs MES-FET and HBT integrated circuits. Such remarkable progress in the device performances is based on the scaling down for MESFET and near ballistic transportation for HBT. Propagation delay times of inverters have been reduced to 6.7 ps/gate and 1.9 ps/gate, and maximum toggle frequencies of flip-flop circuits have reached 31.4 GHz and 22.15 GHz, respectively. Wide-band amplifiers with a band width of about 10 GHz have also been obtained. This paper reviews recent progress in the speed performan
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Tang, D. D., and T. H. Ning. "Advances in Bipolar IC Technology." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1987. http://dx.doi.org/10.1364/peo.1987.thd1.

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Si bipolar transistors and integrated circuits are widely used for high-performance gate arrays and high-speed cache, memories, and have since become the backbone of the high speed computers. In recent years, steady improvements in the understanding of the design and scaling of the small dimension bipolar transistors together with the advances in the process technology have led to the realization of ever faster bipolar transistors and circuits.
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Hall, K. L., K. A. Rauschenbach, S. G. Finn, R. A. Barry, N. S. Patel, and J. D. Moores. "100 Gb/s Optical Network Technology." In Ultrafast Electronics and Optoelectronics. OSA, 1997. http://dx.doi.org/10.1364/ueo.1997.ub3.

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Nuzillat, Gerard, and Rene Castagne. "GaAs Integrated Circuit Technology for High Speed Analog and Digital Electronics." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.wb1.

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Some guidelines for the understanding of the technological trends in GaAs IC'S can be found in a brief recall of device and interconnect behaviour under scaling down. Let us recall that the device control parameters are the internal charge Qt carried by the electrons in the control region end the electron transit time tt. When N identical devices are driven by N interconnexions, each having the same length and carrying the same charge QL, the switching time is aproximately given by tpd = N tt (1+QL/Qt). The local speed will then be improved by reducing both tt and ql/qt. as long as QL/Qt is gr
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Taylor, J. "Ultrashort pulse technology based on optical fibers." In Ultrafast Electronics and Optoelectronics. OSA, 2003. http://dx.doi.org/10.1364/ueo.2003.tha2.

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Abe, Masayuki, Takashi Mimura, Kazuo Kondo, and Masaaki Kobayashi. "Progress and Challenges in HEMT LSI Technology." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1987. http://dx.doi.org/10.1364/peo.1987.wd2.

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Six years have now passed since the announcement in 1980 of the High Electron Mobility Transistor (HEMT)1), and HEMT technology has certainly opened the door to new possibilities for ultra-high-speed LSI/VLSI applications2). Due to the supermobility GaAs/AlGaAs heterojunction structure, the HEMT is especially attractive for low-temperature operations at liquid nitrogen temperature. For LSI level complexity, HEMT technology has made it possible to develop a 1.5 kgate gate array with an 8 x 8 bit parallel multiplier3) for logic circuits, and 4 kbit static RAM for memory circuits.4)
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Sun, Jack Y. C. "Opportunities of Si ULSI Technology for GHz Applications." In Ultrafast Electronics and Optoelectronics. OSA, 1995. http://dx.doi.org/10.1364/ueo.1995.utuc2.

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Asbeck, P. M. "Heterojunction Bipolar Transistor Technology for High Speed Integrated Circuits." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.fb1.

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A bipolar structure provides many potential benefits for picosecond electronic circuits: (a) current flow is vertical, through epitaxial layers whose total thickness is only a few tenths of a micron, decreasing carrier transit times; (b) large amounts of current can be carried by modest size transistors, enabling rapid charging of interconnect capacitances; and (c) threshold voltages are tied to built-in potentials of p-n junctions, which are easy to reproduce device-to-device, enabling accurate logic voltages to be established. Added advantages result from using III-V heterojunctions rather t
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Reports on the topic "Technology / Electronics / Optoelectronics"

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Pasupuleti, Murali Krishna. 2D Quantum Materials for Next-Gen Semiconductor Innovation. National Education Services, 2025. https://doi.org/10.62311/nesx/rrvi425.

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Abstract The emergence of two-dimensional (2D) quantum materials is revolutionizing next-generation semiconductor technology, offering superior electronic, optical, and quantum properties compared to traditional silicon-based materials. 2D materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and black phosphorus, exhibit high carrier mobility, tunable bandgaps, exceptional mechanical flexibility, and strong light-matter interactions, making them ideal candidates for ultra-fast transistors, spintronics, optoelectronic devices, and quantum computin
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Spahn, Olga B., Andrew A. Allerman, Kent D. Choquette, et al. Selective Oxidation Technology and its Applications Toward Electronic and Optoelectronic Devices. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/9462.

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