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Journal articles on the topic 'Technology / Electronics / Optoelectronics'

Author: Grafiati

Published: 4 June 2021

Last updated: 27 July 2025

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1

Kausar, Ayesha, Ishaq Ahmad, Malik Maaza, M. H. Eisa, and Patrizia Bocchetta. "Polymer/Fullerene Nanocomposite for Optoelectronics—Moving toward Green Technology." Journal of Composites Science 6, no. 12 (2022): 393. http://dx.doi.org/10.3390/jcs6120393.

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Optoelectronic devices have been developed using the polymer/fullerene nanocomposite, as focused in this review. The polymer/fullerene nanocomposite shows significant structural, electronics, optical, and useful physical properties in optoelectronics. Non-conducting and conducting polymeric nanocomposites have been applied in optoelectronics, such as light-emitting diodes, solar cells, and sensors. Inclusion of fullerene has further broadened the methodological application of the polymer/fullerene nanocomposite. The polymeric matrices and fullerene may have covalent or physical interactions fo

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Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this

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3

Coffa, Salvatore, and Leonid Tsybeskov. "Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 16–19. http://dx.doi.org/10.1557/s0883769400030219.

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The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the deve

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Avouris, Phaedon. "Carbon Nanotube Electronics and Optoelectronics." MRS Bulletin 29, no. 6 (2004): 403–10. http://dx.doi.org/10.1557/mrs2004.123.

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AbstractCarbon nanotubes (CNTs) are one-dimensional nanostructures with unique properties. This article discusses why CNTs provide an ideal basis for a future carbonbased nanoelectronic technology, focusing specifically on single-carbon-nanotube fieldeffect transistors (CNT-FETs). Results of transport experiments and theoretical modeling will be used to address such issues as the nature of the switching mechanism, the role of the metal contacts, the role of the environment, the FET scaling properties, and the use of these findings to produce high-performance p-type, n-type, and ambipolar CNT-F

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Xie, Ling-Hai, Su-Hui Yang, Jin-Yi Lin, Ming-Dong Yi, and Wei Huang. "Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 2000 (2013): 20120337. http://dx.doi.org/10.1098/rsta.2012.0337.

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Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical wa

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6

Torres-Costa, Vicente. "Nanostructures for Photonics and Optoelectronics." Nanomaterials 12, no. 11 (2022): 1820. http://dx.doi.org/10.3390/nano12111820.

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As microelectronic technology approaches the limit of what can be achieved in terms of speed and integration level, there is an increasing interest in moving from electronics to photonics, where photons and light beams replace electrons and electrical currents, which will result in higher processing speeds and lower power consumption [...]

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Kuo, Yue. "(Invited) Plasma-Based Thin Film Technology in Fabrication of Nano- to Giga-Sized Electronics." ECS Meeting Abstracts MA2022-02, no. 30 (2022): 1106. http://dx.doi.org/10.1149/ma2022-02301106mtgabs.

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This talk is presented to honor Professor Noel Buckley who has made many important contributions in compound semiconductors, copper thin film deposition, batteries, and other topics critical to the manufacture of modern optoelectronics. He is also a good friend, colleague, and collaborator for 3 decades. Plasma technology has been broadly used in the mass production of modern electronics varying from nano-sized devices in ICs to giga-dimension flat panel displays. It is especially critical to the preparation of thin films with well-controlled properties, geometry, and reliability. In this talk

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Ho, Johnny C. "(Invited) Flexible Electronic Devices Based on Low-Dimensional Nanomaterials and Their Integration Technologies." ECS Meeting Abstracts MA2024-02, no. 35 (2024): 2473. https://doi.org/10.1149/ma2024-02352473mtgabs.

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Flexible electronic technology has broken through the inherent limitations of traditional silicon-based optoelectronics, possessing characteristics such as lightweight, transparency, flexibility, portability, and functional reconfigurability, providing innovative leadership for technological changes in the post-Moore era, such as the Internet of Things, artificial intelligence, and healthcare. Among numerous material systems, single crystal or highly crystalline inorganic materials are more easily compatible with semiconductor processes, possessing superior electrical properties, stability, an

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Sotor, Jarosław, Krzysztof Abramski, Arkadiusz Antończak, et al. "Laser and Fiber Electronics Group." Photonics Letters of Poland 11, no. 2 (2019): 38. http://dx.doi.org/10.4302/plp.v11i2.901.

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The Laser & Fiber Electronics Group (LFEG) constitutes a team of young, skilled and ambitious researchers, doctoral candidates and students. The Group possesses great experience in applied optoelectronics and laser technology. Currently, it conducts research in several areas,mostly focusing on: ultrashort laser pulse generation using novel materials, development of pulsed fiber laser sources ranging from visible to mid-infrared, development of compact mid-infrared optical frequency combs, laser spectroscopy techniques, laser vibrometry, solid-state lasers, advanced analog and digital elect

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10

Jagadish, Chennupati. "(Dielectric Science &Technology Thomas D. Callinan Award) Semiconductor Nanostructures for Optoelectronics and Energy Applications." ECS Meeting Abstracts MA2023-01, no. 20 (2023): 1503. http://dx.doi.org/10.1149/ma2023-01201503mtgabs.

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Semiconductors have played an important role in the development of information and communications technology, solar cells, solid state lighting. Nanowires are considered as building blocks for the next generation electronics and optoelectronics. In this talk, I will present the results on growth of nanowires, nanomembranes and microrings and their optical properties. Then I will discuss theoretical design and experimental results on optoelectronic devices. In particular I will discuss nanowire and micro-ring lasers and integration of nanowires and microrings. I will also present the results on

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11

Dmitriev, Alex A., Alex S. Dmitriev, and Inna Mikhailova. "New Nanocompoite Thermal Interface Materials Based on Graphene Flakes, Mesoscopic Microspheres and Polymers." MATEC Web of Conferences 207 (2018): 04002. http://dx.doi.org/10.1051/matecconf/201820704002.

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In recent years, there has been a great interest in the development and creation of new functional energy materials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of differen

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12

Chen, Jifan. "Two-Dimensional Semiconductor Materials." Transactions on Computer Science and Intelligent Systems Research 7 (November 25, 2024): 185–94. https://doi.org/10.62051/4mqtv311.

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Compared to traditional three-dimensional semiconductors, two-dimensional semiconductors exhibit a multitude of distinctive electronic transport and optical properties at the nanoscale. These exceptional properties, such as enhanced electron mobility, direct bandgap, and quantum confinement effects, offer groundbreaking possibilities for the development of novel nanoelectronics and optoelectronics devices. The unique characteristics of 2D materials enable the creation of ultra-thin, flexible, and highly efficient devices that can perform tasks previously unattainable with conventional material

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13

Lieber, Charles M., and Zhong Lin Wang. "Functional Nanowires." MRS Bulletin 32, no. 2 (2007): 99–108. http://dx.doi.org/10.1557/mrs2007.41.

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AbstractNanotechnology offers the promise of enabling revolutionary advances in diverse areas ranging from electronics, optoelectronics, and energy to healthcare. Underpinning the realization of such advances are the nanoscale ma te rials and corresponding nanodevices central to these application areas. Semiconductor nanowires and nanobelts are emerging as one of the most powerful and diverse classes of functional nanoma terials that are having an impact on science and technology. In this issue of MRS Bulletin, several leaders in this vibrant field of research present brief reviews that highli

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Xiong, Weixiang. "Advanced Electronics: The Emergence, Evolution, and Future of Gallium Nitride Technology." Transactions on Computer Science and Intelligent Systems Research 5 (August 12, 2024): 693–97. http://dx.doi.org/10.62051/akz0c726.

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Gallium nitride (GaN) is a desirable substance for electronics that require high frequencies and high power. The research and development of vertical GaN devices on GaN substrates has made significant progress in recent years, thanks to the availability of high-quality free-standing bulk GaN substrates. Despite some inherent difficulties associated with substrate fabrication and the intricate process of metal doping for sensor applications, the prospects for the future of GaN appear quite encouraging. As a result, various transistors and diodes with excellent characteristics have been reported

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15

Kim, Sunjae, Minje Kim, Jihyun Kim та Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, № 7 (2023): 1199. http://dx.doi.org/10.3390/nano13071199.

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The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN tre

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Grigorenko, M. F., E. P. Chernigovtsev, and V. V. Poluyanska. "Gallium oxide  a prospective multifunctional material of the fourth generation (review)." Uspihi materialoznavstva 2024, no. 8-9 (2024): 66–81. https://doi.org/10.15407/materials2024.08-09.007.

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This work is devoted to the analysis and systematization of the main information on the properties of gallium oxide and materials based on it and their practical application, as well as the prospects for further research of the specified actual oxide material. A review of literature data concerns general properties and structure of gallium oxide Ga2O3, various methods to produce Ga2O3 thin films, nanostructures, bulk crystals, powders, the application of gallium oxide in various fields of science and technology, including semiconductor field, electronic engineering, optoelectronics, the creati

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17

Xu, Jikai, Yu Du, Yanhong Tian, and Chenxi Wang. "Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics." International Journal of Optomechatronics 14, no. 1 (2020): 94–118. http://dx.doi.org/10.1080/15599612.2020.1857890.

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18

Huang, Yu, and C. M. Lieber. "Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires." Pure and Applied Chemistry 76, no. 12 (2004): 2051–68. http://dx.doi.org/10.1351/pac200476122051.

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Semiconductor nanowires (NWs)represent an ideal system for investigating low-dimensional physics and are expected to play an important role as both interconnects and functional device elements in nanoscale electronic and optoelectronic devices. Here we review a series of key advances defining a new paradigm of bottom-up assembling integrated nanosystems using semiconductor NW building blocks. We first introduce a general approach for the synthesis of a broad range of semiconductor NWs with precisely controlled chemical composition, physical dimension, and electronic, optical properties using a

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19

Romaniuk, Ryszard S. "Wilga 2019 – Photonics Applications." Photonics Letters of Poland 11, no. 2 (2019): 35. http://dx.doi.org/10.4302/plp.v11i2.900.

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Wilga Symposium on Photonics Applications [1] has been serving the national and international communities of young researchers since nearly a quarter of the century. Ph.D. students, active in photonics research and technology, optoelectronics, optical engineering, and associated fields like electronics, materials engineering, mechatronics, and ITC present successive developments of their work. The subjects embrace optical fiber technology, optical communications, sensors, light sources and lighting, research and industrial applications. Since its beginning Wilga has gathered more than 5000 pre

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Mafra, D. L., T. Ming, and J. Kong. "Facile graphene transfer directly to target substrates with a reusable metal catalyst." Nanoscale 7, no. 36 (2015): 14807–12. http://dx.doi.org/10.1039/c5nr03892h.

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We explore a CVD transfer technique that abandons both the intermediate membrane and chemical etching of the metal catalyst. This method is fast, simple and is a necessary route towards roll-to-roll production of large-area CVD graphene sheets at high quality and low cost. Such integration is a step forward to the economical and industrial scale production of graphene and enables technology for flexible electronics and optoelectronics.

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21

Heydari Gharahcheshmeh, Meysam, and Karen K. Gleason. "Recent Progress in Conjugated Conducting and Semiconducting Polymers for Energy Devices." Energies 15, no. 10 (2022): 3661. http://dx.doi.org/10.3390/en15103661.

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Advanced conductors (such as conducting and semiconducting polymers) are vital building blocks for modern technologies and biocompatible devices as faster computing and smaller device sizes are demanded. Conjugated conducting and semiconducting polymers (including poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), polythiophene (PTh), and polypyrrole (PPy)) provide the mechanical flexibility required for the next generation of energy and electronic devices. Electrical conductivity, ionic conductivity, and optoelectronic characteristics of advanced conductors are governed by their te

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22

Cao, Zhifang. "Pulsed Optoelectronic Rangefinder and Its Measurement Applications in Architectural Design Rationality Assessment." Journal of Nanoelectronics and Optoelectronics 18, no. 10 (2023): 1211–20. http://dx.doi.org/10.1166/jno.2023.3498.

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The laser rangefinder is a device that combines various technologies such as optoelectronics, electronics, microcontroller control technology, signal control, processing technology, and precision mechanical technology. This device has wide application value in aerospace, automatic control, industry, military, geodesy, and construction surveying, among other fields. The pulse laser rangefinder designed uses the SPLLL90_3 laser emitting diode for the laser emission circuit and employs the AD500_9 laser receiving diode for the laser reception circuit. The design of the laser emission circuit incl

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Singh, Yadvendra, and Harish Subbaraman. "Recent Advances in Graphene-Enabled Silicon-Based High-Speed Optoelectronic Devices—A Review." Photonics 10, no. 12 (2023): 1292. http://dx.doi.org/10.3390/photonics10121292.

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Silicon (Si) photonics has emerged as a prominent technology for meeting the escalating requirements of high-speed data transmission in optical communication systems. These systems need to be compact, energy-efficient, and capable of handling large amounts of data, driven by the advent of next-generation communication devices. Recently, there have been significant activities in exploring graphene within silicon-based components to enhance the overall performance metrics of optoelectronic subsystems. Graphene’s high mobility of charge carriers makes it appealing for the next generation of high-

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Gurunathan, K., A. Vadivel Murugan, R. Marimuthu, U. P. Mulik, and D. P. Amalnerkar. "Electrochemically synthesised conducting polymeric materials for applications towards technology in electronics, optoelectronics and energy storage devices." Materials Chemistry and Physics 61, no. 3 (1999): 173–91. http://dx.doi.org/10.1016/s0254-0584(99)00081-4.

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Fuhrer, Michael S., Chun Ning Lau, and Allan H. MacDonald. "Graphene: Materially Better Carbon." MRS Bulletin 35, no. 4 (2010): 289–95. http://dx.doi.org/10.1557/mrs2010.551.

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AbstractGraphene, a single atom–thick plane of carbon atoms arranged in a honeycomb lattice, has captivated the attention of physicists, materials scientists, and engineers alike over the five years following its experimental isolation. Graphene is a fundamentally new type of electronic material whose electrons are strictly confined to a two-dimensional plane and exhibit properties akin to those of ultrarelativistic particles. Graphene's two-dimensional form suggests compatibility with conventional wafer processing technology. Extraordinary physical properties, including exceedingly high charg

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Zika, F., M. Albagul, W. Zhang, S. A. Chodavarapu, R. Quaglia, and A. Albagul. "Gallium Oxide and Its Applications in Electronics: An Overview." WSEAS TRANSACTIONS ON ELECTRONICS 15 (December 6, 2024): 118–27. https://doi.org/10.37394/232017.2024.15.14.

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Gallium oxide (Ga₂ O₃ ), a semiconductor, has recently attracted the attention of many researchers and specialists due to its large band gap and thermal stability, which has made it widely used in several fields, including modern electronics and optoelectronics. In this paper, the many forms and properties of gallium oxide materials will be highlighted, as well as a complete analysis of their distinctive properties. The synthesis and fabrication procedures will also be discussed, which may shed light on the problems and progress made in this field. Some of the most common applications of galli

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Murzin, Serguei P., and Christian Stiglbrunner. "Fabrication of Smart Materials Using Laser Processing: Analysis and Prospects." Applied Sciences 14, no. 1 (2023): 85. http://dx.doi.org/10.3390/app14010085.

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Laser processing is a versatile tool that enhances smart materials for diverse industries, allowing precise changes in material properties and customization of surface characteristics. It drives the development of smart materials with adaptive properties through laser modification, utilizing photothermal reactions and functional additives for meticulous control. These laser-processed smart materials form the foundation of 4D printing that enables dynamic shape changes depending on external influences, with significant potential in the aerospace, robotics, health care, electronics, and automoti

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Михайлова, М. П., К. Д. Моисеев та Ю. П. Яковлев. "Открытие полупроводников A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=-: физические свойства и применение (О б з о р)". Физика и техника полупроводников 53, № 3 (2019): 291. http://dx.doi.org/10.21883/ftp.2019.03.47278.8998.

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AbstractThis overview is devoted to the discovery, development of the technology, and investigation of III–V semiconductors performed at the Ioffe Institute, where the first steps in fabricating III–V semiconductors were taken in 1950 and investigations into their fundamental properties were begun under the leadership of two outstanding scientists—Nina Aleksandrovna Goryunova and Dmitry Nikolayevich Nasledov. Further development of these investigations is reflected in the works of followers and pupils of D.N. Nasledov, who have worked and continue to work at subsidiaries of the Ioffe Institute

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Chen, Huamin, Yun Xu, Jiushuang Zhang, Weitong Wu, and Guofeng Song. "Self-Powered Flexible Blood Oxygen Monitoring System Based on a Triboelectric Nanogenerator." Nanomaterials 9, no. 5 (2019): 778. http://dx.doi.org/10.3390/nano9050778.

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Flexible optoelectronics based on inorganic functional components have attracted worldwide attention due to their inherent advantages. However, the power supply problem presents a significant obstacle to the commercialization of wearable optoelectronics. Triboelectric nanogenerator (TENG) technology has the potential to realize self-powered applications compared to the conventional charging technologies. Herein, a flexible self-powered blood oxygen monitoring system based on TENG was first demonstrated. The flexibility of the TENG is mainly due to the inherent properties of polydimethylsiloxan

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Kumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.

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Abstract: Extremely wide-bandgap β-Ga2O3 is a new way semiconducting has wide range of application such as electronics devices operated at high temperature and short-wavelength optoelectronics. It has a wide bandgap of 4.5eV -4.9 electron volt (ev) and great thermal stabilization up to 14000C, opening new possibilities for various device applications. The development of βGa2O3 thin film growth, characteristics, and device demonstrations is reviewed in this study. The methods used to demonstrate great-quality β-Ga2O3 thin film growth with controlled doping are discussed. Monoclinic β-Ga2O3 appl

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Kumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.

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Abstract: Extremely wide-bandgap β-Ga2O3 is a new way semiconducting has wide range of application such as electronics devices operated at high temperature and short-wavelength optoelectronics. It has a wide bandgap of 4.5eV -4.9 electron volt (ev) and great thermal stabilization up to 14000C, opening new possibilities for various device applications. The development of βGa2O3 thin film growth, characteristics, and device demonstrations is reviewed in this study. The methods used to demonstrate great-quality β-Ga2O3 thin film growth with controlled doping are discussed. Monoclinic β-Ga2O3 appl

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Torres-Moya, Iván. "The New Era of Organic Field-Effect Transistors: Hybrid OECTs, OLEFETs and OFEWs." Applied Sciences 14, no. 18 (2024): 8454. http://dx.doi.org/10.3390/app14188454.

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Advancements in electronic device technology have led to an exponential growth in demand for more efficient and versatile transistors. In this context, organic field-effect transistors (OFETs) have emerged as a promising alternative due to their unique properties and potential for flexible and low-cost applications. However, to overcome some of the inherent limitations of OFETs, the integration of organic materials with other materials and technologies has been proposed, giving rise to a new generation of hybrid devices. In this article, we explore the development and advances of organic field

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Maruyama, Shigeo, Michael S. Arnold, Ralph Krupke, and Lian-Mao Peng. "Physics and applications of nanotubes." Journal of Applied Physics 131, no. 8 (2022): 080401. http://dx.doi.org/10.1063/5.0087075.

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Nanotubes have been pursued aggressively over the last three decades. Significant progress has been made in the selective growth and post-synthetic sorting of highly monodisperse carbon nanotubes, in understanding their physics, and in assembling and integrating them into high-performance devices. These discoveries have led to promising applications in areas such as high-performance CMOS, high-speed RF, thin-film transistors, flexible electronics, thermoelectrics, sensors, and optoelectronics. The rapid development of modern information technology depends on the exploitation of new and novel m

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Ren, Fang, Bingyao Liu, Zhaolong Chen, et al. "Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer." Science Advances 7, no. 31 (2021): eabf5011. http://dx.doi.org/10.1126/sciadv.abf5011.

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Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline sub

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Sun, Yuewei. "Overview of Diamond Semiconductor Development and Research Directions." Applied and Computational Engineering 147, no. 1 (2025): 121–26. https://doi.org/10.54254/2755-2721/2025.22582.

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With the advancement of science and technology, traditional semiconductor materials can no longer meet the high frequency and high power demand. Diamond semiconductor has gradually become a research hotspot because of its excellent physical properties, such as high hardness and wide forbidden band. Through the literature review method, this paper discusses the crystal structure and physical properties of diamond semiconductor, such as high hardness, high thermal conductivity, wide bandwidth and other advantages. This paper also describes its preparation methods, including high temperature and

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Suber, Lorenza, and Gaetano Campi. "Hierarchic self-assembling of silver nanoparticles in solution." Nanotechnology Reviews 1, no. 1 (2012): 57–78. http://dx.doi.org/10.1515/ntrev-2011-0004.

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AbstractFacile chemical synthesis and understanding of the formation mechanism of silver nanoparticles, ordered on the microscale on one-dimensional (1D), 2D or in 3D structures of complex forms is challenging for advanced applications, in electronics, optoelectronics, and medicine, to mention a few. Significant results obtained in the comprehension of assembling mechanisms in solutions of silver nanoparticles in 1D, 2D, and 3D organic-inorganic mesostructures are surveyed together with details on their preparation and characterization. Emphasis will be placed on very recent results obtained i

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S, Anil Subash, Shubha MB, Yash N. Athreya, Ajit Khosla, and Manjunatha C. "Advances in Printable, Flexible and Transparent Graphene Photodetectors for Optoelectronics Applications." ECS Transactions 107, no. 1 (2022): 18681–95. http://dx.doi.org/10.1149/10701.18681ecst.

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Photodetectors, often known as photosensors, are light or electromagnetic radiation sensors. Graphene is a carbon allotrope made up of a single layer of carbon atoms that are linked together in a hexagonal configuration. Carbon nanotubes, another emerging material, are made from rolled graphene. The high carrier mobility, linear dispersion, and 0 bandgap of graphene contribute to the ultra-fast, wide-spectrum response of graphene photodetectors from visible to infrared. The high responsivity of graphene photodetectors is 500 A/W for light of 450 nm and 4 A/W for light of 1064 nm. The strong co

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Ravindra, Nuggehalli M., Samiha Hossain, and Airefetalo Sadoh. "Principles, properties and preparation of thermochromic materials." Material Science & Engineering International Journal 7, no. 3 (2023): 146–56. http://dx.doi.org/10.15406/mseij.2023.07.00218.

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The unique temperature-induced color changing properties of thermochromic materials make them of significant interest for applications in aerospace, anti-counterfeiting technology, construction, defense, drugs & pharmaceuticals, electronics, energy, food & agriculture, maintenance of infrastructure, materials processing & storage, military technology, optoelectronics, packaging, sensors, smart displays, textiles, thermal storage and transportation. Thermochromism occurs due to the following characteristics: (a) phase transitions in a compound (e.g. leuco dyes); (b) changes in ligan

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Hoang, Tu, Jisk Holleman, and Jurriaan Schmitz. "SOI-LEDs with Carrier Confinement." Materials Science Forum 590 (August 2008): 101–16. http://dx.doi.org/10.4028/www.scientific.net/msf.590.101.

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Silicon-On-Insulator (SOI) technology exhibits significant performance advantages over conventional bulk silicon technology in both electronics and optoelectronics. In this chapter we present an overview of recent applications on light emission from SOI materials. Particularly, in our work we used SOI technology to fabricate light emitting diodes (LEDs), which emit around 1130 nm wavelength with an external quantum efficiency of 1.4 × 10−4 at room temperature (corresponding to an internal quantum efficiency close to 1 %). This is almost two orders of magnitude higher than reported earlier for

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Murzin, Serguei P., and Nikolay L. Kazanskiy. "Creation of One- and Two-Dimensional Copper and Zinc Oxides Semiconductor Structures." Applied Sciences 13, no. 20 (2023): 11459. http://dx.doi.org/10.3390/app132011459.

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The most effective methods for the synthesis of nanostructured copper and zinc oxides, which have unique properties and potential applications in a variety of fields including electronics, photonics, sensorics, and energy conversion, are analyzed. Special attention is paid to laser-based methods for synthesizing oxide nanostructures, with an emphasis on the importance of controlling power density distribution to influence the quality and properties of the nanomaterials. The great significance of wavefront shaping techniques for controlling laser-initiated processes is highlighted, which enable

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Guo, Yizhe, Yancong Qiao, Tianrui Cui, et al. "Electrospun Nanofibers for Integrated Sensing, Storage, and Computing Applications." Applied Sciences 12, no. 9 (2022): 4370. http://dx.doi.org/10.3390/app12094370.

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Electrospun nanofibers have become the most promising building blocks for future high-performance electronic devices because of the advantages of larger specific surface area, higher porosity, more flexibility, and stronger mechanical strength over conventional film-based materials. Moreover, along with the properties of ease of fabrication and cost-effectiveness, a broad range of applications based on nanomaterials by electrospinning have sprung up. In this review, we aim to summarize basic principles, influence factors, and advanced methods of electrospinning to produce hundreds of nanofiber

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Guo, Yizhe, Yancong Qiao, Tianrui Cui, et al. "Electrospun Nanofibers for Integrated Sensing, Storage, and Computing Applications." Applied Sciences 12, no. 9 (2022): 4370. http://dx.doi.org/10.3390/app12094370.

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Electrospun nanofibers have become the most promising building blocks for future high-performance electronic devices because of the advantages of larger specific surface area, higher porosity, more flexibility, and stronger mechanical strength over conventional film-based materials. Moreover, along with the properties of ease of fabrication and cost-effectiveness, a broad range of applications based on nanomaterials by electrospinning have sprung up. In this review, we aim to summarize basic principles, influence factors, and advanced methods of electrospinning to produce hundreds of nanofiber

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Olyaee, Saeed. "Ultra-fast and compact all-optical encoder based on photonic crystal nano-resonator without using nonlinear materials." Photonics Letters of Poland 11, no. 1 (2019): 10. http://dx.doi.org/10.4302/plp.v11i1.890.

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In this paper an ultra-compact all-optical encoder is presented by using a two-dimensional photonic crystal. The designed logic gate is based on the interference effect. The proposed structure consists of several photonic crystal waveguides connected by 2 nano-resonators. The nano-resonators are designed to reduce the size of the radius of the dielectric rods. The contrast ratios and delay time for the proposed all-optical encoder are respectively 6 dB and 125 fs. The size of the structure is equal to 132 µm2. Equality of the output power in the logic states “one”, the small dimensions, the lo

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Cama, Eleonora Sofia, Mariacecilia Pasini, Francesco Galeotti, and Umberto Giovanella. "Transparent Electrodes Based on Crack-Templated Metallic Networks for Next-Generation Optoelectronics." Materials 18, no. 13 (2025): 3091. https://doi.org/10.3390/ma18133091.

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Transparent conductive electrodes (TCEs) are essential components in modern optoelectronic devices, including organic light-emitting diodes and solar cells, sensors, and flexible displays. Indium tin oxide has been the dominant material for TCEs due to its high transparency and conductivity. However, its brittleness, high cost, and increasingly limited availability pose significant challenges for electronics. Crack-template (CT)-assisted fabrication has emerged as a promising technique to develop metal mesh-based TCEs with superior mechanical flexibility, high conductivity, and excellent optic

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Guisinger, Nathan P., and Michael S. Arnold. "Beyond Silicon: Carbon-Based Nanotechnology." MRS Bulletin 35, no. 4 (2010): 273–79. http://dx.doi.org/10.1557/mrs2010.729.

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AbstractFor more than two decades, scientists and engineers have focused on impending limitations (from high-power densities and heat distribution to device patterning) that constrain the future miniaturization of conventional silicon technology. Thus far, academic and industrial efforts have risen to the challenge and continue to advance planar silicon processing, pushing traditional microtechnology to the nanometer scale. However, insurmountable limitations, both of physical nature and cost, still loom and motivate the research of new nanomaterials and technologies that have the potential to

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Vlasenko, O. I. "INDUCED RESTRUCTURING OF THE CRYSTAL STRUCTURE AND ACOUSTIC RESPONSE IN SEMICONDUCTORS BASED ON CADMIUM TELLURIDE FOR USE IN OPTOELECTRONICS AND TOPICAL AREAS OF SEMICONDUCTOR TECHNOLOGY (REVIEW)." Optoelektronìka ta napìvprovìdnikova tehnìka 57 (December 30, 2022): 43–70. http://dx.doi.org/10.15407/iopt.2022.57.043.

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The reliability and competitiveness of modern semiconductor electronic technology are determined by the level of existing technologies. These requirements set the task of increasing the efficiency of methods for obtaining and post-growth processing of semiconductor materials and structures, research and control of their properties at all stages of manufacturing and operation of products. The question of the quality and maximum reliability of a wide range of various structures and devices for multipurpose purposes, in particular, opto, photoelectronics, sensors, etc., and sometimes the need to

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Miluski, Piotr, Marcin Kochanowicz, Jacek Zmojda, and Dominik Dorosz. "Multicolor emission of Tb3+/Eu3+ co-doped poly(methyl methacrylate) for optical fibre technology." Photonics Letters of Poland 9, no. 4 (2017): 110. http://dx.doi.org/10.4302/plp.v9i4.788.

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The article presents multicolor emission observed in poly(methyl methacrylate) specimens co-doped by trivalent terbium and europium ions. The bright luminescence was obtained using organometallic complexes of lanthanides and energy transfer antenna effect. Spectroscopic characterization exhibit wide excitation spectrum according to chelating structure of used complexes and characteristic Tb3+ and Eu3+ emission peaks in luminescence spectra. The calculated CIE 1931 chromaticity coordinates confirm that colorful emission from green to red can be obtained using proposed materials. Full Text: PDF

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Han, Xinqing, Cong Liu, Meng Zhang, Qing Huang, Xuelin Wang, and Peng Liu. "Thermal Spike Responses and Structure Evolutions in Lithium Niobate on Insulator (LNOI) under Swift Ion Irradiation." Crystals 12, no. 7 (2022): 943. http://dx.doi.org/10.3390/cryst12070943.

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Irradiating solid materials with energetic ions are extensively used to explore the evolution of structural damage and specific properties in structural and functional materials under natural and artificial radiation environments. Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium niobate industry and has been widely applied in various fields of photonics, electronics, optoelectronics, etc. Based on 30 MeV 35Cl and 40Ar ion irradiation, thermal spike responses and microstructure evolution of LNOI under the action of extreme electronic energy loss are discussed in det

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Bajaj, Samiksha, and Jyh Ming Wu. "Phase Transition Engineering of Vanadium Dioxide Induced by Oxygen Vacancies." ECS Meeting Abstracts MA2023-02, no. 34 (2023): 1646. http://dx.doi.org/10.1149/ma2023-02341646mtgabs.

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A reconfigurable optical functional system is a pioneering and comprehensive approach for portable future flexible electronics, irrespective of traditional silicon-based technology. VO2 shows tremendous temperature-dependent structural and electrical phase transitions as a complex correlated metal oxide, presenting it as a potential candidate for bolometers, thermal camouflage, and optoelectronics applications. However, the structural stability and high transition temperature restrict room-temperature applications. The present study reports the oxygen vacancies-assisted phase transition engine

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Lischke, S., A. Peczek, J. S. Morgan, et al. "Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz." Nature Photonics 15, no. 12 (2021): 925–31. http://dx.doi.org/10.1038/s41566-021-00893-w.

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AbstractOn a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate wav

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