Academic literature on the topic 'Tensoresistive effect'

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Journal articles on the topic "Tensoresistive effect"

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Zimin, S. P., and A. N. Bragin. "Tensoresistive effect in porous silicon layers with different morphology." Semiconductors 38, no. 5 (2004): 594–97. http://dx.doi.org/10.1134/1.1755898.

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Umarov, Salim Khallokovich, Zhasur Dzhuraevich Ashurov, and Zilola Mukhitdinovna Narzullaeva. "STUDY OF PESO - PHO Y OF PESO - PHOTORESISTIVE CH ORESISTIVE CHARACTERISTICS OF TERISTICS OF TlInSe2 SINGLE CRYSTALS." Scientific Reports of Bukhara State University 4, no. 6 (2020): 3–10. http://dx.doi.org/10.52297/2181-1466/2020/4/6/2.

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Objective. The aim of the study is to establish the patterns and mechanisms of the effect of various impurities on the tensoresistive characteristics of TlInSe2 single crystals, as well as in solid solutions based on it. When studying the piezophotoresistive characteristics of TlInSe2 single crystals, it will determine the nature of the effect of uniaxial elastic deformation on the electrical, photoelectric and tensoresistive properties of TlInSe2 crystals. Methods. Crystals synthesized by fusing the components in accordance with stoichiometry in evacuated (~ 10-4 mm Hg) and sealed quartz ampo
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Druzhinin, A. O., I. I. Maryamova, and O. P. Kutrakov. "High temperature strain sensors based on gallium phosphide whiskers." Технология и конструирование в электронной аппаратуре, no. 3-4 (2019): 26–30. http://dx.doi.org/10.15222/tkea2019.3-4.26.

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The paper presents a study of tensoresistive characteristics of p-type GaP whiskers with [111] crystallographic orientation coinciding with the direction of the maximal piezoresistive effect for this material. The authors present a newly-developed technology of creating the ohmic contacts to GaP crystals that allows using these crystals at high temperatures (400—600°C). Tensoresistive characteristics of p-type GaP whiskers were studied in the strain range of ±1,2•10–3 rel. un. These studies show that the gauge factor for these crystals at 20°C is rather large. Thus, for p-type GaP crystals wit
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Antonets, E. V., G. E. Bragin, and T. S. Fadeeva. "Minimizing the temperature effect on the characteristics of a tensoresistive pressure gauge." Measurement Techniques 35, no. 1 (1992): 83–88. http://dx.doi.org/10.1007/bf00977886.

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Zakharenko, N. I., and M. P. Semen’ko. "Influence of magnetic field on the tensoresistive effect in iron-based amorphous alloys." Physics of Metals and Metallography 104, no. 2 (2007): 142–45. http://dx.doi.org/10.1134/s0031918x07080054.

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Zakharenko, N. I., and M. P. Semen’ko. "On the temperature behavior of a tensoresistive effect in the amorphous Fe80B14 alloy." Physics of Metals and Metallography 107, no. 2 (2009): 169–72. http://dx.doi.org/10.1134/s0031918x09020082.

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Buryk, I. P., D. V. Velykodnyi, L. V. Odnodvorets, I. E. Protsenko, and E. P. Tkach. "Tensoresistive effect in thin metal films in the range of elastic and plastic strain." Technical Physics 56, no. 2 (2011): 232–37. http://dx.doi.org/10.1134/s1063784211020083.

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Mamatkarimov, O. O., and R. Kh Khamidov. "Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions." Technical Physics Letters 29, no. 2 (2003): 95–96. http://dx.doi.org/10.1134/1.1558735.

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Dzundza, B. S., Y. S. Yavorsky, V. V. Fedoryuk, M. M. Rozhko, U. M. Pisklynets, and O. I. Bulbuk. "Hardware and software for automated examination of defects of hard tissues of teeth after endodontic intervention for fatigue and destruction." Physics and Chemistry of Solid State 24, no. 4 (2023): 722–28. http://dx.doi.org/10.15330/pcss.24.4.722-728.

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The work developed circuit engineering, design and software of the loading machine for automated examination of dental hard tissue defects after endodontics intervention for fatigue and destruction. The advantage of this development is the combination as cyclic loading methods simulating chewing movements and force effects on compression in a compact small-sized case, with low power consumption and small noise level. Thanks to the use of a screw transmission and a stepper motor in combination with a sensitive tensoresistive force sensor, it was possible to achieve high accuracy and resolution
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Dissertations / Theses on the topic "Tensoresistive effect"

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Кулак, А. С. "Трансформація уявлень про тензорезистивний ефект у плівкових матеріалах". Thesis, Сумський державний університет, 2018. http://essuir.sumdu.edu.ua/handle/123456789/66900.

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Ефект тензочутливості був відкритий англійським фізиком Томсоном (Лорд Кельвін) у 1856 р. при дослідженні електропровідності тонких металевих дротів. Суть явища полягає у тому, що при деформації тонкої дротини, пластини чи плівки відбувається зміна електричного опору.
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