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1

Ferraro, Antonio, Dimitrios C. Zografopoulos, Roberto Caputo, and Romeo Beccherelli. "Terahertz polarizing component on cyclo-olefin polymer." Photonics Letters of Poland 9, no. 1 (March 31, 2017): 2. http://dx.doi.org/10.4302/plp.v9i1.699.

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Wire-grid polarizers constitute a traditional component for the control of polarization in free-space devices that operate in a broad part of the electromagnetic spectrum. Here, we present an aluminium-based THz wire grid polarizer, fabricated on a sub-wavelength thin flexible and conformal foil of Zeonor polymer having a thickness of 40um. The fabricated device,characterized by means of THz time-domain spectroscopy, exhibitsa high extinction ratio between 30 and 45dB in the 0.3-2.1THz range. The insertion losses oscillate between 0 and 1.1dB andthey stemalmost exclusively from moderate Fabry-Perót reflections and it is engineered forvanishing at 2THz for operation with quantum cascade lasers. Full Text: PDF ReferencesI. F. Akyildiz, J. M. Jornet, C. Han, "Terahertz band: Next frontier for wireless communications", Phys. Commun. 12, 16 (2014). CrossRef M.C. Kemp, P.F. Taday, B.E. Cole, J.A. Cluff, A.J. Fitzgerald, W.R. Tribe, "Security applications of terahertz technology", Proc. SPIE 5070, 44 (2003). CrossRef M. Schirmer, M. Fujio, M. Minami, J. Miura, T. Araki, T. Yasui, "Biomedical applications of a real-time terahertz color scanner", Biomed. Opt. Express 1, 354 (2010). CrossRef R.P. Cogdill, R.N. Forcht, Y. Shen, P.F. Taday, J.R. Creekmore, C.A. Anderson, J.K. Drennen, "Comparison of Terahertz Pulse Imaging and Near-Infrared Spectroscopy for Rapid, Non-Destructive Analysis of Tablet Coating Thickness and Uniformity", J. Pharm. Innov. 2, 29 (2007). CrossRef Y.-C. Shen, "Terahertz pulsed spectroscopy and imaging for pharmaceutical applications: A review", Int. J. Pharm. 417, 48(2011). CrossRef A.G. Davies, A.D. Burnett, W. Fan, E.H. Linfield, J.E. Cunningham, "Terahertz spectroscopy of explosives and drugs", Mater. Today 11, 18 (2008). CrossRef J.F. Federici, B. Schulkin, F. Huang, D. Gary, R. Barat, F. Oliveira, D. Zimdars, "THz imaging and sensing for security applications?explosives, weapons and drugs", Semicond. Sci. Technol. 20, S266 (2005). CrossRef D. Saeedkia, Handbook of Terahertz Technology for Imaging, Sensing and Communications (Elsevier, 2013).N. Born, M. Reuter, M. Koch, M. Scheller, "High-Q terahertz bandpass filters based on coherently interfering metasurface reflections", Opt. Lett. 38, 908 (2013). CrossRef A. Ferraro, D.C. Zografopoulos, R. Caputo, R. Beccherelli, "Periodical Elements as Low-Cost Building Blocks for Tunable Terahertz Filters", IEEE Photonics Technol. Lett. 28, 2459 (2016). CrossRef A. Ferraro, D.C. Zografopoulos, R. Caputo, R. Beccherelli, "Broad- and Narrow-Line Terahertz Filtering in Frequency-Selective Surfaces Patterned on Thin Low-Loss Polymer Substrates", IEEE J. Sel. Top. Quantum Electron. 23 (2017). CrossRef B. S.-Y. Ung, B. Weng, R. Shepherd, D. Abbott, C. Fumeaux, "Inkjet printed conductive polymer-based beam-splitters for terahertz applications", Opt. Mater. Express 3, 1242 (2013). CrossRef J.-S. Li, D. Xu, J. Yao, "Compact terahertz wave polarizing beam splitter", Appl. Opt. 49, 4494 (2010). CrossRef K. Altmann, M. Reuter, K. Garbat, M. Koch, R. Dabrowski, I. Dierking, "Polymer stabilized liquid crystal phase shifter for terahertz waves", Opt. Express 21, 12395 (2013). CrossRef D.C. Zografopoulos, R. Beccherelli, "Tunable terahertz fishnet metamaterials based on thin nematic liquid crystal layers for fast switching", Sci. Rep. 5, 13137 (2015). CrossRef G. Isić, B. Vasić, D. C. Zografopoulos, R. Beccherelli, R. Gajić, "Electrically Tunable Critically Coupled Terahertz Metamaterial Absorber Based on Nematic Liquid Crystals", Phys. Rev. Appl. 3, 064007 (2015). CrossRef K. Iwaszczuk, A.C. Strikwerda, K. Fan, X. Zhang, R.D. Averitt, P.U. Jepsen, "Flexible metamaterial absorbers for stealth applications at terahertz frequencies", Opt. Express 20, 635 (2012). CrossRef F. Yan, C. Yu, H. Park, E.P.J. Parrott, E. Pickwell-MacPherson, "Advances in Polarizer Technology for Terahertz Frequency Applications", J. Infrared Millim. Terahertz Waves 34, 489 (2013). CrossRef http://www.tydexoptics.com DirectLink K. Imakita, T. Kamada, M. Fujii, K. Aoki, M. Mizuhata, S. Hayashi, "Terahertz wire grid polarizer fabricated by imprinting porous silicon", Opt. Lett. 38, 5067 (2013). CrossRef A. Isozaki, et al., "Double-layer wire grid polarizer for improving extinction ratio", Solid-State Sens. Actuators Microsyst. Transducers Eurosensors XXVII 2013 Transducers Eurosensors XXVII 17th Int. Conf. On, IEEE, pp. 530?533 (2013). DirectLink A. Ferraro, D. C. Zografopoulos, M. Missori, M. Peccianti, R. Caputo, R. Beccherelli, "Flexible terahertz wire grid polarizer with high extinction ratio and low loss", Opt. Lett. 41, 2009(2016). CrossRef M.S. Vitiello, G. Scalari, B. Williams, P.D. Natale, "Quantum cascade lasers: 20 years of challenges", Opt. Express 23, 5167(2015). CrossRef A. Podzorov, G. Gallot, "Low-loss polymers for terahertz applications", Appl. Opt. 47, 3254(2008). CrossRef
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2

Withayachumnankul, Withawat, Masayuki Fujita, and Tadao Nagatsuma. "Integrated Silicon Photonic Crystals Toward Terahertz Communications." Advanced Optical Materials 6, no. 16 (June 25, 2018): 1800401. http://dx.doi.org/10.1002/adom.201800401.

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3

Li, Jiusheng, Jinlong He, and Zhi Hong. "Terahertz wave switch based on silicon photonic crystals." Applied Optics 46, no. 22 (July 6, 2007): 5034. http://dx.doi.org/10.1364/ao.46.005034.

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4

Fan, Fei, Sheng-Jiang Chang, Chao Niu, Yu Hou, and Xiang-Hui Wang. "Magnetically tunable silicon-ferrite photonic crystals for terahertz circulator." Optics Communications 285, no. 18 (August 2012): 3763–69. http://dx.doi.org/10.1016/j.optcom.2012.05.044.

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5

Kim, Jung-Il, Seok-Gy Jeon, Geun-Ju Kim, Jaehong Kim, Huyn-Haeng Lee, and Si-Hyun Park. "Two-Dimensional Terahertz Photonic Crystals Fabricated by Wet Chemical Etching of Silicon." Journal of Infrared, Millimeter, and Terahertz Waves 33, no. 2 (January 8, 2012): 206–11. http://dx.doi.org/10.1007/s10762-011-9867-5.

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6

Lin, Chunchen, Caihua Chen, Ahmed Sharkawy, Garrett J. Schneider, Sriram Venkataraman, and Dennis W. Prather. "Efficient terahertz coupling lens based on planar photonic crystals on silicon on insulator." Optics Letters 30, no. 11 (June 1, 2005): 1330. http://dx.doi.org/10.1364/ol.30.001330.

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7

Wang, Rong, Weiyi Yang, Shuang Gao, Xiaojing Ju, Pengfei Zhu, Bo Li, and Qi Li. "Direct-writing of vanadium dioxide/polydimethylsiloxane three-dimensional photonic crystals with thermally tunable terahertz properties." Journal of Materials Chemistry C 7, no. 27 (2019): 8185–91. http://dx.doi.org/10.1039/c8tc05759a.

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8

Ghoshal, S. K., and H. S. Tewari. "Photonic applications of Silicon nanostructures." Material Science Research India 7, no. 2 (February 8, 2010): 381–88. http://dx.doi.org/10.13005/msri/070207.

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This presentation highlights of some scientific insights on the possibilities of photonic applications of silicon nanostructures (NSs) one of the most fertile research field in nano-crystallite physics that has innumerable possibilities of device applications. Nanostructured silicon is generic name used for porous Si (p-Si) as well as Si nanocrystals (NC-Si) having length scale of the order of few nanometer. The emission of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) from low-dimensional silicon has opened up new avenue in recent years. It is important from a fundamental physics viewpoint because of the potential application of Si wires and dots in opto-electronics devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such NSs. Future nano-technology would replace electrical with optical interconnects that has appealing potentialities for higher-speed performance and immunity to signal cross talk. A varieties of applications includes LD, LED, solar cells, sensors, photonic band gap devices and Fibonacci quasi-crystals, to cite a few.
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9

Fujita, Masayuki, Safumi Suzuki, and Jaeyoung Kim. "Development of terahertz integrated technology platform through fusion of resonant tunneling diodes and photonic crystals." Impact 2018, no. 5 (August 20, 2018): 33–35. http://dx.doi.org/10.21820/23987073.2018.5.33.

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10

Lin, Shawn-Yu, J. G. Fleming, and E. Chow. "Two- and Three-Dimensional Photonic Crystals Built with VLSI Tools." MRS Bulletin 26, no. 8 (August 2001): 627–31. http://dx.doi.org/10.1557/mrs2001.157.

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The drive toward miniature photonic devices has been hindered by our inability to tightly control and manipulate light. Moreover, photonics technologies are typically not based on silicon and, until recently, only indirectly benefited from the rapid advances being made in silicon processing technology. In the first part of this article, the successful fabrication of three-dimensional (3D) photonic crystals using silicon processing will be discussed. This advance has been made possible through the use of integrated-circuit (IC) fabrication technologies (e.g., very largescale integration, VLSI) and may enable the penetration of Si processing into photonics. In the second part, we describe the creation of 2D photonic-crystal slabs operating at the λ = 1.55 μm communications wavelength. This class of 2D photonic crystals is particularly promising for planar on-chip guiding, trapping, and switching of light.
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11

Khoroshko, L. S., A. V. Baglov, and A. A. Hnitsko. "MODELING OF MULTILAYER ULTRATHIN-FILM PHOTONIC CRYSTALS FOR SELECTIVE FILTERS." Doklady BGUIR, no. 7 (125) (December 7, 2019): 88–94. http://dx.doi.org/10.35596/1729-7648-2019-125-7-88-94.

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The aim of the work was to study the optical properties of the one-dimensional photonic crystals from ultrathin alternating layers of titanium and silicon oxides with different order of alternating layers to form defective half-wave layers in the bulk of the photonic crystal. The layer thicknesses were optimized by the dispersion of the refractive index and it was shown that for the formation of 16-layer photonic crystal structure without a half-wave layer with a photonic band gap in the UV region, it is necessary to use layers of titanium dioxide and silicon oxide with a thickness of 28.3 and 53.2 nm, respectively. The structure of the 26-layer photonic crystal with a thickness of 2130 nm with two non-equidistant half-wave layers forming resonant transmission bands in the photonic band gap with peaks at 550 and 601 nm is proposed. Due to the dispersion of the refractive index, the ratio of the thicknesses of TiO2:SiO2 layers varies from 1:1.88 in the case of a 16-layer structure with a photonic band gap in the UV region to 1:1.5 in the case of a 26-layer structure with a photonic band gap in the visible range . The effect of a photonic crystal structure without half-wave layers on the emission spectrum of a liquid crystal display manufactured using IPS technology has been demonstrated in order to reduce the intensity of the blue component to increase the safety of the user's vision. The using of the photonic crystals with two half-wave defective layers allows to achieve complete separation of the spectrum components, which can be used to modify the spectra of large liquid crystal panels, their manufacture using AMOLED technology is a very difficult technological task even for leaders in this field.
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12

Shir, Daniel J., Erik C. Nelson, Debashis Chanda, Andrew Brzezinski, Paul V. Braun, John A. Rogers, and Pierre Wiltzius. "Dual exposure, two-photon, conformal phase mask lithography for three dimensional silicon inverse woodpile photonic crystals." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 4 (July 2010): 783–88. http://dx.doi.org/10.1116/1.3456181.

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13

Wellenzohn, Markus, Eva Melnik, Paul Muellner, Liam O’Faolain, and Rainer Hainberger. "Design of a Photonic Crystal Defect Waveguide Biosensor Operating in Aqueous Solutions at 1.34 µm." Proceedings 2, no. 13 (November 14, 2018): 1026. http://dx.doi.org/10.3390/proceedings2131026.

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A two-dimensional photonic crystal defect waveguide sensor based on CMOS-compatible silicon-on-insulator technology was designed for operation in aqueous solutions at a wavelength of 1.34 µm, by the use of the 3D Plane Wave Expansion and the Finite Difference Time Domain simulation method. An operation under water in this wavelength regime allows for a significantly smaller propagation loss in contrast to the state-of-the-art operation wavelength of photonic crystals at 1.55 µm. The sensor working principle is label-free and based on evanescent wave sensing exploiting the local refractive index change induced by the specific binding of target molecules to a capture molecules immobilized on the surface of the phontonic crystal structure. We experimentally proved the theoretical predications of our simulations and demonstrated the sensing functionality of the photonic crystal defect waveguide using the biotin-straptavidin binding system.
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14

Umenyi, Amarachukwu Valentine, Shinya Kawashiri, Kenta Miura, and Osamu Hanaizumi. "Theoretical Analysis of Photonic Band Gaps and Defect Modes of Novel Photonic Crystal Waveguides Consisting of Si-Ion Implanted SiO2 Using the Finite-Difference Time-Domain Method." Key Engineering Materials 459 (December 2010): 162–67. http://dx.doi.org/10.4028/www.scientific.net/kem.459.162.

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In this paper, photonic crystals (PC) based on 2-D periodic arrays of air holes were investigated on Si-ion implanted SiO2using finite-difference time-domain (FDTD) simulations. The PC design parameters based on the telecommunication wavelength (λ=1.55 µm) were obtained by varying the radius to lattice constant ratio (r/a) from 0.2 to 0.45. We analyzed both transverse electric (TE) and transverse magnetic (TM) mode propagation in triangular-lattice PCs. The result obtained shows that a PC bandgap (PBG) exists for TE-mode propagation in the Si-ion implanted SiO2patterned 2-D triangular lattice of air holes. We have also calculated the dispersion relations for the TE mode of a line defect in the structure and shown a fabricated sample. These analyses are obviously important for fabricating novel PC waveguides, which can easily be integrated into the existing silicon technology for directing light from one part of a chip to the other.
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15

d’Alessandro, Antonio, and Rita Asquini. "Light Propagation in Confined Nematic Liquid Crystals and Device Applications." Applied Sciences 11, no. 18 (September 18, 2021): 8713. http://dx.doi.org/10.3390/app11188713.

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Liquid crystals are interesting linear and nonlinear optical materials used to make a wide variety of devices beyond flat panel displays. Liquid crystalline materials can be used either as core or as cladding of switchable/reconfigurable waveguides with either an electrical or an optical control or both. In this paper, materials and main device structures of liquid crystals confined in different waveguide geometries are presented using different substrate materials, such as silicon, soda lime or borosilicate glass and polydimethylsiloxane. Modelling of the behaviour of liquid crystal nanometric molecular reorientation and related refractive index distribution under both low-frequency electric and intense optical fields is reported considering optical anisotropy of liquid crystals. A few examples of integrated optic devices based on waveguides using liquid crystalline materials as core for optical switching and filtering are reviewed. Reported results indicate that low-power control signals represent a significant feature of photonic devices based on light propagation in liquid crystals, with performance, which are competitive with analogous integrated optic devices based on other materials for optical communications and optical sensing systems.
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16

Li, Jin, Thomas M. Horgan, Andrew J. Gatesman, Robert H. Giles, Aram S. Karakashian, and William D. Goodhue. "Jet-based Photonic Crystals for Terahertz Technology – A Need for Higher Resolution." MRS Proceedings 860 (2004). http://dx.doi.org/10.1557/proc-860-ll4.3.

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ABSTRACTTwo-dimensional hexagonal photonic crystals of air columns in a wax substrate were fabricated by jet-based methods. By modifying the structure of the photonic crystals (PC), electromagnetic waves can be controlled, enabling the design of novel devices for waveguides, filters, and couplers. The jet-based processing is a solid freeforming method that can fabricate complex 2D or 3D photonic structures quickly and easily as compared to micro-machining and lithographic methods. The resolution of our 3D Systems ThermoJet® solider object printer is 300 × 400 × 600 dpi (XYZ) with the layer thickness of 0.042 mm. The wax used is a thermopolymer build material, similar to production investment casting wax material. The periodicity of the lattice of our 2D PC structures was designed to form bandstop filters in the 0.1–0.3 THz range. Transmission spectra of the structures were measured with a Bruker IFS 66v FT-IR interferometer. Photonic band gaps were observed at 0.17 THz and 0.23 THz along the Γ-M direction for both the TM and TE polarized incident beam for the PC structures with lattice constant of 0.787 mm and 0.586 mm, respectively. The location and width of the bandgaps agree with theoretical calculation based on a block-iterative frequency-domain method for Maxwell's equations in a planewave basis. To the best of our knowledge, this is the first time a jet-based process has been used successfully to fabricate PC structures at these high frequencies. However, the ThermoJet® printer as well as other current available solid freeforming technologies lack the resolution to PC structures operating in the terahertz regime. To extend this technology to terahertz applications, such as terahertz lasers, waveguides, and imaging system, a 10-fold increase in machine resolution is required to produce finer structures. Engineering materials with lower electromagnetic absorption and higher dielectric constants at terahertz frequencies are also critical to developing THz photonic bandgap technology.
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17

Hata, N., and C. M. Fortmann. "The Emergence of an Amorphous-Silicon Based Photonic Technology; Optical Memories to 3-D Photonic Crystals." MRS Proceedings 609 (2000). http://dx.doi.org/10.1557/proc-609-a12.11.

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ABSTRACTAmorphous silicon is an ideal system for optical engineering since its optical properties can drastically be changed through its ability to absorb such impurities as hydrogen whose contents range from zero to beyond twenty percent. In this work we report light-induced changes in its optical properties which may add potential in active optical engineering. Considerable changes in the phases in reflected polarized lights from transparent-substrate side of amorphous silicon films are observed both after prolonged illumination of intense light at the light-soaking temperature range from 40 to 250 °C. Most of the changes are localized to amorphous silicon region near substrate-film interfaces. Illumination time dependencies and annealing characteristics are examined, and physics behind these observed changes are discussed.
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18

Venkataraman, Sriram, Garrett Schneider, Janusz Murakowski, Shouyan Shi, and Dennis W. Prather. "Dispersion Engineering of Three-Dimensional Silicon Photonic Crystals: Fabrication and Applications." MRS Proceedings 829 (2004). http://dx.doi.org/10.1557/proc-829-b5.9.

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ABSTRACTIn this paper, we propose the design and fabrication of buried silicon optical interconnect technology, the sub-surface silicon optical bus (S3B). The proposed approach relies on engineering the dispersion properties of embedded silicon three-dimensional photonic crystals to create sub-micron routing channels and control light propagation. Further, we present a method for the fabrication of buried three-dimensional (3D) photonic-crystal structures using conventional planar silicon micromachining. The method utilizes a single planar etch mask coupled with time-multiplexed, sidewall-passivating, deep anisotropic reactive-ion etching, to create an array of spherical voids with three-dimensional symmetry. Preliminary results are presented that demonstrate the feasibility of realizing chip-scale optical interconnects using our proposed approach.
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19

Bayat, Khadijeh, Mahdi Farrokh Baroughi, Sujeet K. Chaudhuri, and Safieddin Safavi-Naeini. "A Low Temperature Photonic Crystal Technology for Integration with Modern CMOS Technologies." MRS Proceedings 990 (2007). http://dx.doi.org/10.1557/proc-0990-b04-08.

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ABSTRACTIn this paper, low temperature amorphous silicon oxynitride (a-SixOyNz:H) thin film technology is proposed for implementation of CMOS compatible photonic crystal (PC) based optical integrated circuits (OICs). The a-SixOyNz films of different refractive indices were developed by plasma enhanced chemical vapor deposition (PECVD) technique using silane, nitrous oxide, and ammonia as gas phase precursors at 300°C. The films with refractive index between 1.43 − 1.75 were obtained by changing gas flow ratios. Such thin films can be used as cladding and core layers in photonic crystal structure.The bandgap and guiding properties of the a-SixOyNz based PCs were simulated and was shown that the a-SixOyNz:H based PC technology offers larger feature sizes than a conventional silicon based photonic crystals.
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20

Gillet, Jean-Numa, Yann Chalopin, and Sebastian Volz. "Atomic-Scale Three-Dimensional Phononic Crystals With a Very Low Thermal Conductivity to Design Crystalline Thermoelectric Devices." Journal of Heat Transfer 131, no. 4 (February 20, 2009). http://dx.doi.org/10.1115/1.3072927.

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Superlattices with thermal-insulating behaviors have been studied to design thermoelectric materials but affect heat transfer in only one main direction and often show many cracks and dislocations near their layer interfaces. Quantum-dot (QD) self-assembly is an emerging epitaxial technology to design ultradense arrays of germanium QDs in silicon for many promising electronic and photonic applications such as quantum computing, where accurate QD positioning is required. We theoretically demonstrate that high-density three-dimensional (3D) arrays of molecular-size self-assembled Ge QDs in Si can also show very low thermal conductivity in the three spatial directions. This physical property can be considered in designing new silicon-based crystalline thermoelectric devices, which are compatible with the complementary metal-oxide-semiconductor (CMOS) technologies. To obtain a computationally manageable model of these nanomaterials, we investigate their thermal-insulating behavior with atomic-scale 3D phononic crystals: A phononic-crystal period or supercell consists of diamond-cubic (DC) Si cells. At each supercell center, we substitute Si atoms by Ge atoms in a given number of DC unit cells to form a boxlike nanoparticle (i.e., QD). The nanomaterial thermal conductivity can be reduced by several orders of magnitude compared with bulk Si. A part of this reduction is due to the significant decrease in the phonon group velocities derived from the flat dispersion curves, which are computed with classical lattice dynamics. Moreover, according to the wave-particle duality at small scales, another reduction is obtained from multiple scattering of the particlelike phonons in nanoparticle clusters, which breaks their mean free paths (MFPs) in the 3D nanoparticle array. However, we use an incoherent analytical model of this particlelike scattering. This model leads to overestimations of the MFPs and thermal conductivity, which is nevertheless lower than the minimal Einstein limit of bulk Si and is reduced by a factor of at least 165 compared with bulk Si in an example nanomaterial. We expect an even larger decrease in the thermal conductivity than that predicted in this paper owing to multiple scattering, which can lead to a ZT much larger than unity.
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21

Lipscomb, G. F., J. Lam, M. Stiller, and P. Schroeter. "Applications of Organic and Inorganic Optical Thin Films in Telecommunications." MRS Proceedings 598 (1999). http://dx.doi.org/10.1557/proc-598-bb8.3.

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The demands of exponentially growing Internet traffic, coupled with the advent of Dense Wavelength Division Multiplexing (DWDM) fiber optic systems to meet those demands, have triggered a revolution in the telecommunications industry. In the three short years of deployment, DWDM performance has accelerated dramatically. Channel counts have grown from 4 to 80, with 170 announced, and channel spacings have shrunk from 400 GHz to 50 GHz. Practical systems that put 1 TeraBit/sec. of information on a fiber are now on the horizon. This dramatic increase has been built upon, and has driven, improvements in fiber optic component technology, which has in turn driven improvements in photonic materials. The next generation of systems for the “all optical network” will require higher performance components coupled with dramatically lower costs. One approach to achieve significantly lower costs per function is to employ Planar Lightwave Circuits (PLC) to integrate multiple optical functions on a single substrate leading to a single package. In this way multiple components can be fabricated and interconnected at once, significantly reducing both the manufacturing and the packaging/assembly costs. The manufacture of PLCs, however, places demanding requirements on materials, design and fabrication processes. Parameters such as index of refraction, absorption and birefringence must be tightly controlled. PLCs have been made using inorganic crystals, such as Lithium Niobate, oxide glasses or polymers on silicon substrates and semi-conductor materials, such as Indium Phosphide (InP). All except InP are commercially available. In this paper we give an overview of the applications of PLCs in DWDM fiber optic transmission systems and discuss how material's requirements flow down from end-use requirements. The specific example of the use of polymer based thermo-optic switches for reconfigurable Optical Add/Drop Multiplexer (OADM) applications is discussed.
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