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Journal articles on the topic 'Thermal coefficient of resistivity'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Shao-ping Zhu. "A unified derivation of the laser energy deposition coefficient, electron thermal conduction coefficient and resistivity in the plasma." Acta Physica Sinica 74, no. 11 (2025): 0. https://doi.org/10.7498/aps.74.20250340.

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The laser energy deposition coefficient, the electron thermal conduction coefficient, and the resistivity are three important physical quantities in plasma physics. For a multi-ion-component plasma, considering only the collisional interaction between electrons and ions, starting from the kinetic equation under the Fokker-Planck approximation and using multi-timescale method, a unified derivation of the laser energy deposition coefficient, electron thermal conduction coefficient and resistivity in the plasma is presented.

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2

Lisjak, Darja, Miha Drofenik, and Drago Kolar. "Composite ceramics with a positive temperature coefficient of electrical resistivity effect." Journal of Materials Research 15, no. 2 (2000): 417–28. http://dx.doi.org/10.1557/jmr.2000.0065.

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Composite ceramics with compositions within the ZnO–NiO–TiO2, ZnO–MgO, and ZnO–Ln2O3 (Ln = Nd, Sm) systems were found to exhibit an anomalous positive temperature coefficient of electrical resistivity (PTCR) effect. The investigations revealed, that in all cases when the PTCR effect was identified, the composite ceramics were found to be composed of phases with different electrical resistivities and linear thermal expansion coefficients. Thermal mismatch between the phases in the composites leads to a disconnection of the grains of the low resistivity constituent phase on account of the high t

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Bahrami, Amin, Niloofar Soltani, Martin I. Pech-Canul, et al. "Bilayer graded Al/B4C/rice husk ash composite: Wettability behavior, thermo-mechanical, and electrical properties." Journal of Composite Materials 52, no. 27 (2018): 3745–58. http://dx.doi.org/10.1177/0021998318769993.

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In this study, wettability behavior of B4C substrate as well as B4C/crystalline rice husk ash and B4C/amorphous rice husk ash substrates with two aluminum alloys were studied. The electrical resistivity, thermal expansion coefficients, and thermal diffusivity of bilayer Al/B4C/rice husk ash composite fabricated by one-step pressureless infiltration were measured and the obtained data were systemically analyzed using the Taguchi method and analysis of variance. Boron carbide substrates after addition of amorphous or crystalline rice husk ash display good wettability with molten aluminum alloys.

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4

Hamilton, B., J. L. Adams, and J. G. Brisson. "High Accuracy Resisitivity and Temperature Coefficient Measurements of Invar Wire from 5K to 300K." IOP Conference Series: Materials Science and Engineering 1301, no. 1 (2024): 012170. http://dx.doi.org/10.1088/1757-899x/1301/1/012170.

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Abstract The temperature coefficient of resistivity is a critical element of many AC-based hot-wire measurements of thermal properties. At cryogenic temperatures, most metallic materials suitable for wire and film-based forms have either a temperature coefficient or absolute resistivity that is too small to enable practical, accurate measurements. Invar (36Ni 64Fe) controlled thermal expansion alloy has a significant temperature coefficient of resistance while also maintaining significant absolute resistivity at cryogenic temperatures, and so has seen some use in low temperature 3-omega measur

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Khudhair, Nawal H., and Kareem A. Jasim. "A Study of the Effectiveness of Tin on the Thermal Conductivity Coefficient and Electrical Resistance of Se60Te40-xSnx Chalcogenide Glass." Ibn AL-Haitham Journal For Pure and Applied Sciences 36, no. 1 (2023): 149–57. http://dx.doi.org/10.30526/36.1.2892.

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This research calculated the effect of partial replacement of Trillium with tin by weight ratios x=0, 5, 10, 15, and 20 of the weight of manufactured samples on the thermal conductivity coefficient of Se60Te40-xSnx chalcogenide glasses. The thermal conductivity coefficient of the samples was calculated using a disk- Lee. The results showed that increasing the concentration of tin improves the thermal insulation ability by decreasing the thermal conductivity value and then determining the optimal weight ratios at which a large thermal insulation is obtained. The electrical resistivity as a func

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6

Phewphong, Sunti, and Tosawat Seetawan. "Thermoelectric Properties of PbTe." Advanced Materials Research 802 (September 2013): 223–26. http://dx.doi.org/10.4028/www.scientific.net/amr.802.223.

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The PbTe has been prepared by pressing and annealing method in argon atmosphere. The PbTe sample was obtained single phase and cubic structure. The Seebeck coefficient, the electrical resistivity, thermal conductivity measured by steady state method and evaluated dimensionless figure merit at room temperature. The values of Seebeck coefficient, the electrical resistivity, thermal conductivity and dimensionless figure merit are about -260 µV/K, 3 mΩcm, 0.5 W/m K and ~ 0.35 respectively at 420 K.

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7

Русанов, Б. А., В. Е. Сидоров, А. И. Мороз, P. Svec, Sr. та D. Janickovic. "Плотность и электросопротивление сплавов Al-Ni-Co-Sm(Tb)". Письма в журнал технической физики 47, № 15 (2021): 39. http://dx.doi.org/10.21883/pjtf.2021.15.51233.18839.

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Density and electrical resistivity of Al-Ni-Co-Sm(Tb) glass-forming alloys were studied in wide temperature range include liquid state. It was found the sharp increase of density and decrease of resistivity at liquidus temperature. It was discovered that heating of the melts above a certain temperature leads to the appearance of a hysteresis of properties. Thermal expansion coefficient and temperature coefficient of resistivity were calculated from experimental data.

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8

Xu, Yidong, Yixuan Wu, Zhiwei Chen, et al. "Thermoelectric properties of Ni-doped BaSi2." Functional Materials Letters 09, no. 01 (2016): 1650017. http://dx.doi.org/10.1142/s179360471650017x.

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BaSi2 has been known as a wide gap semiconductor with an intrinsic low lattice thermal conductivity, therefore may be a promising environmental friendly thermoelectric (TE) material with abundant constituent elements. In this work, NixBa[Formula: see text]Si2 compounds with 0[Formula: see text] are synthesized by arc melting. The resistivity, thermal conductivity and Seebeck coefficient are measured in the temperature range of 300–850[Formula: see text]K. The resistivity of the undoped BaSi2 is as high as 480[Formula: see text]mOhm[Formula: see text]cm at room temperature. Through Ni-doping, b

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9

Gotoh, Tamihiro, Kosuke Yazawa, and Kento Imai. "Electrical Properties of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder." Key Engineering Materials 596 (December 2013): 21–25. http://dx.doi.org/10.4028/www.scientific.net/kem.596.21.

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Electrical properties of SnS films deposited by a thermal evaporation method have been investigated using the resistivity and thermopower measurements. The SnS films show p-type conduction at room temperature, and electrical activation energy of ~0.3 eV. Resistivity and Seebeck coefficient at room temperature were ~4×101 Ωm and +0.2 mV/K for as-deposited sample. The resistivity decreased ~1×100 Ω·m and the Seebeck coefficient increased +0.27 mV/K when the sample was annealed at 400 °C. Crystallization and structural change cause the improvement of electronic transport with annealing treatment.

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10

AVILÉS, F., O. CEH, and A. I. OLIVA. "PHYSICAL PROPERTIES OF AU AND AL THIN FILMS MEASURED BY RESISTIVE HEATING." Surface Review and Letters 12, no. 01 (2005): 101–6. http://dx.doi.org/10.1142/s0218625x05006834.

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The electrical resistivity (ρ), resistive thermal coefficient (αr), thermal expansion coefficient (αt) and stress (σ) of Al and Au thin films deposited by thermal evaporation were measured while films were heated by Joule effect. Electrical resistivity measured by the four-probe technique was simultaneously measured with surface film temperature in real time. Au films show important variations in the αr and ρ properties when thickness ranged from 0.1μm to 1μm; contrarily, Al films show insignificant variations in the 0.1μm to 2γm thickness range. The role of the surface aluminum oxide on these

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11

Martini, Mickey, Helena Reichlova, Yejin Lee, et al. "Magneto-thermal transport indicating enhanced Nernst response in FeCo/IrMn exchange coupled stacks." Applied Physics Letters 121, no. 21 (2022): 212405. http://dx.doi.org/10.1063/5.0113485.

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We present an analysis of magneto-thermal transport data in IrMn/FeCo bilayers based on the Mott relation and report an enhancement of the Nernst response in the vicinity of the blocking temperature. We measure all four transport coefficients of the longitudinal resistivity, anomalous Hall resistivity, Seebeck effect, and anomalous Nernst effect, and we show a deviation arising around the blocking temperature between the measured Nernst coefficient and the one calculated using the Mott rule. We attribute this discrepancy to spin fluctuations at the antiferromagnet/ferromagnet interface near th

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12

Liu, Xiao Yan, Ai Hua Liu, Feng Wei, and Wu Yao. "Study on the Temperature-Sensitive Properties of Carbon Fiber-Reinforced Mortar." Materials Science Forum 675-677 (February 2011): 1167–70. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.1167.

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Carbon fiber (~5mm long)-reinforced mortar is found to be an effective thermal sensor. In this paper, relations between temperature change and resistivity of carbon fiber- reinforced mortar (CFRM for short) with different carbon fiber contents (0.4%~1.2% by mass of cement) are studied. The results show that during the initial period, the resistivity decreases when the temperature increases (Negative Temperature Coefficient effect). After the temperature reaches a certain value, the resistivity increases when the temperature increases (Positive Temperature Coefficient effect). Besides, with the

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13

Sagara, Katsuhiro, Yun Lu, and Dao Cheng Luan. "FEM Analysis on Thermoelectric Properties of Metal/TiO_2–x Composites with Random Distribution of Metal Powder." Materials Science Forum 750 (March 2013): 130–33. http://dx.doi.org/10.4028/www.scientific.net/msf.750.130.

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Analysis model of finite element method with a random distribution for thermoelectric composites was built. Thermoelectric properties including electrical resistivity, Seebeck coefficient and thermal conductivity of M/TiO2–x (M = Cu, Ni, 304 stainless steel (304SS)) thermoelectric composites were investigated by the proposed model. Cu/TiO2–x composite showed a large decrease in electrical resistivity while 304SS/TiO2–x composite thermal conductivity was slightly increased. Calculated dimensionless figure-of-merit, ZT of Ni/TiO2–x composite was higher than those of TiO2–x and the other composit

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14

Qu, Yingying, Ping Xu, Hu Liu, et al. "Tunable temperature-resistivity behaviors of carbon black/polyamide 6 /high-density polyethylene composites with conductive electrospun PA6 fibrous network." Journal of Composite Materials 53, no. 14 (2018): 1897–906. http://dx.doi.org/10.1177/0021998318815731.

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Temperature-resistivity behaviors of carbon black/polyamide 6/high-density polyethylene conductive polymer composites containing electrospun polyamide 6 fibrous network were studied systematically. The positive temperature coefficient intensity of the conductive polymer composites increased firstly and then reduced gradually with increasing heating rate, showing a heating rate-dependent positive temperature coefficient intensity. The fascinating phenomenon was ascribed to the microstructure change of conductive network induced by the volume expansion and the thermal residual stress generated i

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15

Cho, Dong Choul, Cheol Ho Lim, Ki Tae Kim, et al. "Synthesis and Thermoelectric Properties of N-Type Bi₂Te_2.7Se_0.3 Compounds by Spark Plasma Sintering." Materials Science Forum 486-487 (June 2005): 654–57. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.654.

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Thermoelectric properties of the spark plasma sintered n-type Bi2Te2.7Se0.3 compounds were characterized with the sintering temperature, time and hydrogen reduction process. The Seebeck coefficient, electrical resistivity and thermal conductivity were dependent on hydrogen reduction process as well as sintering temperature. The Seebeck coefficient and electrical resistivity decreased and thermal conductivity increased with reduction treatment and sintering temperature. The results suggest that the carrier density varies with the dissolved oxygen and Te vacancies generated during the pulverizat

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16

Wang, Fu, Yi Zhou, Shi-Xin Gao, et al. "Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide." Acta Physica Sinica 71, no. 3 (2022): 036501. http://dx.doi.org/10.7498/aps.71.20211434.

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Silicon carbide (SiC) has been widely used in nuclear technology due to its excellent properties. In the irradiation environment, the energetic incident particles can cause the atoms in the material to deviate from the position of the crystal lattice, thereby producing the vacancies, interstitial atoms, anti-site atoms and other point defects. These defects will change the thermal properties of the material and degrade the service performance of the material. Therefore, in this work the equilibrium molecular dynamics method (Green-Kubo method) is used to study the effect of point defects on th

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17

Xu, Wanlu, Wenwu Wang, Xiaoshan Zhang, and Ping Yu. "(Ba0.55Sr0.45)1−xLaxTi1.01O3-Bi0.5Na0.5TiO3 Positive Temperature Coefficient Resistivity Ceramics with Low Curie Temperature (~−15 °C)." Materials 17, no. 8 (2024): 1812. http://dx.doi.org/10.3390/ma17081812.

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Positive temperature coefficient of electrical resistivity (PTCR) materials with low Curie temperature have been paid increasing attention lately. In this study, PTCR materials with a Curie temperature of approximately −15 °C were investigated by La3+ doping Ba0.55Sr0.45TiO3 ceramics. It could be expected to meet the requirements of thermal management systems for low-temperature control. In addition, a trace amount of Bi0.5Na0.5TiO3 (BNT) was employed to improve the resistivity and the PTCR performance. A significant PTCR effect was achieved with a high resistivity jump of nearly four orders o

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18

Wang, Yifei, and Xiaoyang Chen. "Investigation of the Positive Temperature Coefficient Resistivity of Nb-Doped Ba0.55Sr0.45TiO3 Ceramics." Crystals 14, no. 5 (2024): 419. http://dx.doi.org/10.3390/cryst14050419.

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The demands of low-Curie-temperature (~−10 °C) positive temperature coefficient (PTC) thermistors are increasing in advanced precision integrated circuits and other industries. In this paper, the Nb-doped Ba0.55Sr0.45TiO3(BST)-based PTC resistivity materials are reported. The effects of the sintering process, especially the cooling rate on the PTC properties of the material, are investigated. The results indicate that the Ba0.55Sr0.45Ti0.9985Nb0.0015O3 composition of the prepared PTC ceramics demonstrates promising PTC characteristics. These include a Curie temperature as low as −13 °C, a high

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19

Shi, Lei, Na Zhou, Jintao Wu, et al. "An All-in-One Testing Chip for the Simultaneous Measurement of Multiple Thermoelectric Parameters in Doped Polysilicon." Micromachines 16, no. 2 (2025): 116. https://doi.org/10.3390/mi16020116.

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Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters—such as the Seebeck coefficient, thermal conductivity, and electrical resistivity—of polysilicon with various doping conditions is essential for designing and fabricating high-performance thermopile sensors. This work presents an all-in-one testing chip that incorporates double-layer thermoelectric structures on a suspended membrane-based supporting layer, with polysilicon constituting at least one of these thermoelectric

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20

Liaqat, Khurram, Srosh Fazil, Saba Mumtaz, and Syed Asim Hussain Shah. "Influence of Graphene Oxide and Multiwalled Carbon Nanotubes on Electrical, Tribological, Mechanical and Thermal Properties of Poly (methyl methacrylate) Nanocomposites." Journal of Physical Science 36, no. 1 (2025): 37–54. https://doi.org/10.21315/jps2025.36.1.4.

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A series of nanocomposites were synthesised by combining polymethyl methacrylate (PMMA) with low-loading percentages of multi-walled carbon nanotubes (MWCNTs) and graphene oxide (GO), while keeping the total weight fraction of MWCNTs/GO constant at 0.01wt%. The coexistence of MWCNTs and GO resulted in the formation of a bridging network within the PMMA matrix, greatly reinforcing the properties of the nanocomposites. These nanocomposites were then analysed for surface and volume resistivity, friction coefficient and mechanical properties. The results showed a significant decrease in friction c

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21

Alzamil, Teysir. "Comparing some physical properties of Sn93Sb5Zn2, Sn93Sb5Bi2 rapidly solidified alloys." International Journal for Scientific Research 4, no. 2 (2025): 311–25. https://doi.org/10.59992/ijsr.2025.v4n2p15.

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We prepared two of metallic alloys Sn93Sb5Zn2 and Sn93Sb5Bi2 by rapid solidification method. Then, we studied some of their physical properties, including density and unit cell volume. We measured their electrical resistance, from which we determined their electrical resistivity and the temperature coefficient of resistivity. Additionally, we calculated the Fermi parameters. Thermal properties were studied using differential thermal analysis, and mechanical properties were evaluated using the resonance frequency method. We measured the hardness using a Vickers microhardness tester. The results

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22

Kohri, Hitoshi, and Takayoshi Yagasaki. "Thermoelectric Generating Properties of Aurivillius Compounds." Advances in Science and Technology 77 (September 2012): 285–90. http://dx.doi.org/10.4028/www.scientific.net/ast.77.285.

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Thermoelectric generator is expected as an independent source, an energy converter for co-generation with Refuse Derived Fuel (RDF) and so on. Thermoelectric materials were required high Seebeck coefficient, low electrical resistivity and low thermal conductivity. Thermoelectric oxides are suitable at the high temperature range because of chemical stability. Authors focus attention on Aurivillius compounds. The Aurivillius compounds consist of Perovskite layers and Bi-O layers. It is expected that nano-layered structure shows high Seebeck coefficient due to the quantum confinement of electron

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Япрынцев, М. Н., А. Е. Васильев та О. Н. Иванов. "Влияние температуры спекания на термоэлектрические свойства соединения Bi-=SUB=-1.9-=/SUB=-Gd-=SUB=-0.1-=/SUB=-Te-=SUB=-3-=/SUB=-". Физика и техника полупроводников 53, № 5 (2019): 620. http://dx.doi.org/10.21883/ftp.2019.05.47550.08.

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AbstractThe regularities of the influence of the sintering temperature (750, 780, 810, and 840 K) on the elemental composition, crystal-lattice parameters, electrical resistivity, Seebeck coefficient, total thermal conductivity, and thermoelectric figure of merit of the Bi_1.9Gd_0.1Te_3 compound are investigated. It is established that the elemental composition of the samples during high-temperature sintering varies due to intense tellurium evaporation, which can lead to the formation of various point defects (vacancies and antisite defects) affecting the majority carrier (electron) concentrat

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Huan, Zhengli, Ning Chang, Yunyun Feng, Xuan Fei, Xiang Xu, and Huiming Ji. "Simultaneously Achieved High Piezoelectricity and High Resistivity in Na0.5Bi4.5Ti4O15-Based Ceramics with High Curie Temperature." Materials 17, no. 23 (2024): 5857. http://dx.doi.org/10.3390/ma17235857.

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Good piezoelectricity and high resistivity are prerequisites for high-temperature acceleration sensors to function correctly in high-temperature environments. Bismuth layered structure ferroelectrics (BLSFs) are promising candidates for piezoelectric ceramics with excellent piezoelectric performance at high temperatures, high electrical resistivity, and high Curie temperatures (Tc). In this study, (LiMn)5+ is substituted for Bi at the A-site, and Ce-doping is performed to replace Ti ions in Na0.5Bi4.5Ti4O15, which achieves the desired combination of high piezoelectric coefficients and high res

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Kaiser, AB, and C. Uher. "High-Tc Superconductors: Evidence on the Electron?Phonon Interaction from Transport Measurements." Australian Journal of Physics 41, no. 4 (1988): 597. http://dx.doi.org/10.1071/ph880597.

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We discuss the interpretation of measurements of thermal conductivity, thermopower, Hall coefficient, resistivity and mapetorcsistance in hiJh-temperaturc superconductors. The thermal conductivity of YBa2 Cu3 07 shows an increase below the transition temperature 7;:, demonstrating the importance of the electron-phonon interaction in reducing the phonon current in the normal state. Many features of resistivity and thermopower can be interpreted in terms of conventional metallic models, although morc exotic interpretations have been proposed. We show how measurements on morc disordered samples s

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Sanchela, Anup V., Varun Kushwaha, Ajay D. Thakur, and C. V. Tomy. "Enhancement of Thermopower due to Deficiency of Sb in FeSb₂." Advanced Materials Research 665 (February 2013): 179–81. http://dx.doi.org/10.4028/www.scientific.net/amr.665.179.

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FeSb2 was recently found to be a narrow-gap semiconductor with strong electronelectron correlation and a large thermopower at low temperatures. We report measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity between 5 K to 300 K on polycrystalline samples of FeSb2 and FeSb1.9. We found that the deficiency of Sb in the parent compound leads to a giant anomalous peak in thermopower (S) at low temperatures, reaching ~ 426 μV/K at 20 K, resulting in a high thermoelectric power factor at low temperatures, achieving 10 μW/K2m at 27 K.. Consequently, a significantly

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Sapińska-Sliwa, Aneta, Marc Rosen, Andrzej Gonet, Joanna Kowalczyk, and Tomasz Sliwa. "A New Method Based on Thermal Response Tests for Determining Effective Thermal Conductivity and Borehole Resistivity for Borehole Heat Exchangers." Energies 12, no. 6 (2019): 1072. http://dx.doi.org/10.3390/en12061072.

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Research on borehole heat exchangers is described on the development of a method for the determination, based on thermal response tests, of the effective thermal conductivity and the thermal resistivity for borehole heat exchangers. This advance is important, because underground thermal energy storage increasingly consists of systems with a large number of borehole heat exchangers, and their effective thermal conductivities and thermal resistivities are significant parameters in the performance of the system (whether it contains a single borehole or a field of boreholes). Borehole thermal ener

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Lacsný, Boris, Petra Králiková, Simona Dudáková, Ivana Škorecová, and Aba Teleki. "Measurement of the thermal coefficient of electrical resistivity of a nonmagnetic metal." European Journal of Physics 38, no. 3 (2017): 035201. http://dx.doi.org/10.1088/1361-6404/aa5e0b.

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Szymiczek, Małgorzata, and Dawid Buła. "Polyester and Epoxy Resins with Increased Thermal Conductivity and Reduced Surface Resistivity for Applications in Explosion-Proof Enclosures of Electrical Devices." Materials 15, no. 6 (2022): 2171. http://dx.doi.org/10.3390/ma15062171.

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Composite materials are still finding new applications that require the modification of various properties and are characterized by the summary impact on selected operational features. Due to the operating conditions of electrical equipment enclosures in potentially explosive atmospheres, the surface resistivity ensuring anti-electrostatic properties, i.e., below 109 Ω and resistance to the flame while maintaining appropriate operational enclosure properties is very important. It is also crucial to dissipate heat while reducing weight. Currently metal or cast-iron enclosures are used for vario

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Cho, Won Seung, Dong Choul Cho, Cheol Ho Lim, C. H. Lee, Woon Suk Hwang, and Yeon Chul Yoo. "Microstructure and Thermoelectric Properties of P-Type Bi_0.5Sb_1.5Te₃ Compounds Prepared by Spark Plasma Sintering." Materials Science Forum 510-511 (March 2006): 1122–25. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.1122.

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The microstructure and thermoelectrical properties of the 4wt% Te doped p-type Bi0.5Sb1.5Te3 compounds, fabricated by using spark plasma sintering in the temperature ranging from 250°C to 350°C, were characterized. The density of the sintered compounds was increased to 99.2% of theoretical density by carrying out the consolidation at 350oC for 2 min. The Seebeck coefficient, thermal conductivity and electrical resistivity were dependent on hydrogen reduction process and sintering temperature. The Seebeck coefficient increased with reduction process while the electrical resisitivity significant

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Papikyan A. K, Harutyunyan S. R., Aghamalyan N. R., et al. "Thermoelectric and memristive features of the Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- and Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag structures." Semiconductors 56, no. 3 (2022): 264. http://dx.doi.org/10.21883/sc.2022.03.53071.9770.

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Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5-350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The current--voltage characteristics of the Sb2Te3 fil

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Huang, Xiang Yang, Li Dong Chen, X. Shi, Min Zhou, and Z. Xu. "Thermoelectric Performances of ZrNiSn/C₆₀ Composite." Key Engineering Materials 280-283 (February 2007): 385–88. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.385.

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The ZrNiSn/C60 thermoelectric composite was prepared by a spark plasma sintering (SPS)technique. The obtained sample was fully dense and homogeneous. Slices of the sample were characterized by electrical resistivity, Seebeck coefficient and thermal conductivity up to 850K. It was shown that the composite has a higher electrical conductivity, a lower Seebeck coefficient and a higher thermal conductivity than the ZrNiSn matrix alloy. XRD pattern and EPMA analysis of the composite revealed that the C60 nano particles reacted with ZrNiSn matrix to form ZrC inclusions.

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Rogl, Gerda, and Peter Franz Rogl. "Filled Sb-Based Skutterudites from 1996–2022." Crystals 12, no. 12 (2022): 1843. http://dx.doi.org/10.3390/cryst12121843.

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In the present review the focus is set on filled antimony-based skutterudites as they are among the most promising TE materials. Thermoelectric properties (at 300 K and 800 K) of more than 1200 compositions from more than 250 publications from 1996 to 2022 were collected and evaluated. In various figures the dependence of the peak ZT for single-filled, double-filled and multi-filled compounds of p- and n-type skutterudites on the publishing year, the peak temperature, electrical resistivity, thermal and lattice thermal conductivity, the power factor and the fillers are displayed. Together with

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Jung, Jae Yong, Kwan Ho Park, Soon Chul Ur, and Il Ho Kim. "Thermoelectric and Transport Properties of In-Filled CoSb₃ Skutterudites." Materials Science Forum 658 (July 2010): 17–20. http://dx.doi.org/10.4028/www.scientific.net/msf.658.17.

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In-filled CoSb3 skutterudites (InzCo4Sb12) were prepared and the filling effects on the thermoelectric and transport properties were examined. Seebeck coefficient and Hall coefficient confirmed that all the samples showed n-type conductivity. Temperature dependence of the electrical resistivity suggested that InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was considerably reduced by In filling and the lattice contribution was dominant.

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Zhang, Yang, Yun Wang, Yong Sun, Jin Sheng Jia, and Bing Qiang Zhang. "Effect of Bi₂O₃Content on Properties of Lead Silicate Glass for Microchannel Plate." Key Engineering Materials 753 (August 2017): 123–28. http://dx.doi.org/10.4028/www.scientific.net/kem.753.123.

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As a key material for microchannel plate, the lead silicate glasses doped with different content of Bi2O3 was prepared by melt-quenching method. The effect of Bi2O3 content on thermal properties, chemical stability, and resistivity before and after hydrogen reduction of the prepared glasses were studied. The results show that the coefficient of thermal expansion increases with the increasing of Bi2O3 content, while the transition temperature and softening temperature, the acid and alkali resistance, the volume and surface resistivity decrease gradually. Glass with 10% Bi2O3 and without PbO was

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36

Fathy, Adel, Omayma Elkady, and Ahmed Abu-Oqail. "Production and properties of Cu-ZrO2 nanocomposites." Journal of Composite Materials 52, no. 11 (2017): 1519–29. http://dx.doi.org/10.1177/0021998317726148.

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In the present study, Cu–3, 6, and 9 wt.% of ZrO2 nanocomposites were prepared by an in situ reactive synthesis of copper nitrate Cu(NO3)2 and zirconium oxychloride ZrOCl2. The structure and characteristics were examined by X-ray diffraction, field emission scanning electron microscopy and transmission electron microscopy. The results showed that the nanosized ZrO2 particles with about 45 nm was successfully formed and dispersed within the copper matrix. The effect of ZrO2 nanoparticles content on relative density, Vickers hardness, specific electrical resistivity, and coefficient of thermal e

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37

Milošević, Nenad, Ivana Nikolić, Marc Grelard, and Bruno Hay. "Thermophysical properties of the molybdenum alloy TZM (Mo-0.5Ti-0.08Zr-0.02C) over a wide temperature range." High Temperatures-High Pressures 52, no. 5 (2023): 353–64. http://dx.doi.org/10.32908/hthp.v52.1425.

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This paper presents experimental results on five thermophysical properties of the TZM alloy over a wide temperature range. Specific heat and specific electrical resistivity were measured from room temperature to 2200 °C and 2450 °C, respectively, normal spectral emissivity at 900 nm from 1150 °C to 2300 °C, hemispherical total emissivity from 1100 °C to 2450 °C and the coefficient of the linear thermal expansion from room temperature to 2000 °C. The specific heat, specific electrical resistivity and both emissivities were obtained by the direct pulse heating technique or pulse calorimetry, whi

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Liang, Liu Qing, Ling Min Zeng, Shu Hui Liu, De Gui Li, and Ming Qin. "Thermal Expansion, Magnetic and Electrical Properties of Ternary Compound DyCo_0.67Ga_1.33." Materials Science Forum 848 (March 2016): 703–8. http://dx.doi.org/10.4028/www.scientific.net/msf.848.703.

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The ternary compound DyCo0.67Ga1.33 was synthesized and the thermal expansion of DyCo0.67Ga1.33 was studied in the temperature range of 309–608 K by high temperature powder X-ray diffraction technique. The volumetric coefficient of thermal expansion, , can be represented by . Its magnetic properties were measured between 30 and 300 K, and the magnetic susceptibility of DyCo0.67Ga1.33 was found to follow the Curie–Weiss law in the temperature range of 40–300 K. The effective magnetic moment and paramagnetic Curie temperature were estimated to be 9.86 μB and 40.4 K, respectively. Electrical resi

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Kisil’, O. I., A. B. Kruglov, A. V. Kuznetsov, E. A. Protasov, and V. P. Sobolev. "Anomalies in thermal expansion of YBa2Cu3O7–x superconducting ceramic." Soviet Journal of Low Temperature Physics 15, no. 9 (1989): 543–44. https://doi.org/10.1063/10.0032253.

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The resistivity and the linear thermal expansion coefficient of YBa2Cu3O7−x ceramic are measured in the temperature intervals 80–100 and 180–210 K. The experimental results suggest a structural transformation in YBa2Cu3O7–x ceramic not only in the region of superconducting transition, but also at 180–210 K.

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Harizanova, Sonya, Vassil Vulchev, and Radostina Stoyanova. "Graphene-Based Composites for Thermoelectric Applications at Room Temperature." Materials 16, no. 23 (2023): 7262. http://dx.doi.org/10.3390/ma16237262.

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The thermoelectric materials that operate at room temperature represent a scientific challenge in finding chemical compositions with three optimized, independent parameters, namely electrical and thermal conductivity and the Seebeck coefficient. Here, we explore the concept of the formation of hybrid composites between carbon-based materials and oxides, with the aim of modifying their thermoelectric performance at room temperature. Two types of commercially available graphene-based materials are selected: N-containing reduced graphene oxide (NrGO) and expanded graphite (ExGr). Although the NrG

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Папикян, А., С. Арутюнян, Н. Агамалян та ін. "Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag". Физика и техника полупроводников 56, № 3 (2022): 370. http://dx.doi.org/10.21883/ftp.2022.03.52126.9770.

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Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb

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Isotta, E., N. M. Pugno, and P. Scardi. "Nanostructured kesterite (Cu2ZnSnS4) for applications in thermoelectric devices." Powder Diffraction 34, S1 (2019): S42—S47. http://dx.doi.org/10.1017/s0885715619000277.

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Kesterite (Cu2ZnSnS4, CZTS) powders were produced by reactive high-energy milling, starting from stoichiometric mixtures of the elemental components. CZTS forms fine crystals with a cubic structure, which evolves to the stable tetragonal form after thermal treatment. Tablets were produced by cold pressing of the ball milled powder, and sintered up to 660 °C. Seebeck coefficient, electrical resistivity, and thermal diffusivity were measured on the sintered tablets, pointing out the positive effect of CZTS nanostructure and of the rather large fraction of porosity: thermal conductivity is rather

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Poliakov, Maksim, Dmitry Kovalev, Sergei Vadchenko, et al. "Amorphous/Nanocrystalline High-Entropy CoCrFeNiTix Thin Films with Low Thermal Coefficient of Resistivity Obtained via Magnetron Deposition." Nanomaterials 13, no. 13 (2023): 2004. http://dx.doi.org/10.3390/nano13132004.

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High-entropy alloys are promising materials for novel thin-film resistors since they have high resistivity and a low-temperature coefficient of resistivity (TCR). In this work, a new high-entropy thin-film CoCrFeNiTix was deposited on a Si/SiO2 substrate by means of magnetron sputtering of the multi-component target produced by hot pressing of the powder mixture. The samples possessed a thickness of 130–230 nm and an amorphous atomic structure with nanocrystallite traces. This structure persisted after being annealed up to 400 °C, which was confirmed using X-ray and electron diffraction. The f

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Lin, Guo Min, and Yan Hua Li. "Research on Performance Features of Shape Memory Alloys." Advanced Materials Research 989-994 (July 2014): 652–55. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.652.

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The shape memory effect,the classification and the principle of shape memory alloys are introduced.The performance features such as melting point,density, resistivity,thermal conductivity, thermal expansion coefficient, phase change heattensile strength fatigue limit, grain size, transition temperature,lag size,one-way shape memory, two-way shape memory of Fe-based,Cu-based and Ti-Ni based shape memory alloys are researched in detail.

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Nolas, G. S., J. L. Cohn, J. S. Dyck, C. Uher, G. A. Lamberton, and T. M. Tritt. "Low-temperature transport properties of polycrystalline Ba8Ga16Sn30." Journal of Materials Research 19, no. 12 (2004): 3556–59. http://dx.doi.org/10.1557/jmr.2004.0467.

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Low-temperature resistivity, Seebeck coefficient, thermal conductivity, and heat-capacity measurements were performed on Ba8Ga16Sn30. This compound crystallizes in a cubic type-VIII clathrate phase, space group I¯43m, with the Baatoms residing inside voids created by a tetrahedrally bonded network of Ga andSn atoms. Ba8Ga16Sn30 exhibits semiconducting behavior above 150 K with a low thermal conductivity and thus may hold potential for thermoelectric applications.

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46

Kim, Il Ho. "Phase Transformation and Thermoelectric Properties of Sn-Filled/Fe-Doped CoSb₃ Skutterudites." Defect and Diffusion Forum 312-315 (April 2011): 223–28. http://dx.doi.org/10.4028/www.scientific.net/ddf.312-315.223.

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Sn-filled and Fe-doped CoSb3 skutterudites were synthesized by encapsulated induction melting. A single δ-phase was obtained by subsequent annealing, as confirmed by X-ray diffraction. The as-solidified ingot consisted of mixed phases of -CoSb, -CoSb2, δ-CoSb3 and elemental Sb. The phases could be transformed by annealing, and the phases of the as-solidified ingot annealed at 773 K for 24 h transformed to δ-CoSb3. The temperature dependence of the Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed

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47

Liu, Jing, and Jing Feng Li. "Bi₂Te₃ and Bi₂Te₃/Nano-SiC Prepared by Mechanical Alloying and Spark Plasma Sintering." Key Engineering Materials 280-283 (February 2007): 397–400. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.397.

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Bi2Te3-based alloys are currently best-known, technological thermoelectric materials near room temperature. In this paper, Bi2Te3 and nano-SiC dispersed Bi2Te3 were prepared by mechanical alloying followed by spark plasma sintering (SPS). Raw powders of Bi, Te and SiC were mixed and mechanically alloyed in an argon atmosphere using a planetary ball mill. The SPS temperature was 623K, and the holding time was 5 minutes. The samples were characterized by X-ray Diffraction (XRD) and Scanning electron Microscope (SEM). The thermoelectric properties: i.e. Seebeck coefficient, electrical resistivity

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Yuri, S., S. Ohta, S. Anzai, M. Aikawa, and K. Hatakeyama. "Magnetic susceptibility, electrical resistivity and thermal expansion coefficient of NiAs-type V1−xCrxSe." Journal of Magnetism and Magnetic Materials 70, no. 1-3 (1987): 215–17. http://dx.doi.org/10.1016/0304-8853(87)90413-6.

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ALIEV, F. G., V. V. PRYADUN, R. VILLAR, et al. "ANOMALOUS LATTICE PROPERTIES OF ZrNiSn CAUSED BY ELECTRON LOCALIZATION." International Journal of Modern Physics B 07, no. 01n03 (1993): 383–86. http://dx.doi.org/10.1142/s0217979293000810.

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Thermal transport (resistivity, Seebeck coefficient, thermal conductivity), thermal expansion and Raman spectra of the intermetallic ordered vacancy compound ZrNiSn was studied. Below T = 100 K an isostructural phase transition was observed. Analyzing ZrNiSn properties, we conclude that this transition is related to freezing of Ni atoms in some of equivalent positions. Conduction electrons, delocalized by increasing order at T < 100 K , show a new localization below 20K. In this range, an anomalous negative thermal expansion, possibly caused by electron-electron interaction was seen.

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50

Gao, Nai Kui, Yi Li Wang, Wen Xi Zhang, Zhao Liu, Chi Chen, and Hai Yun Jin. "Study on Electrical and Thermal Properties of Epoxy Resin/Inorganic Filler Composites for the Fully Enclosed Casting Bus Bar and its Calculation of the Temperature Field." Materials Science Forum 804 (October 2014): 191–94. http://dx.doi.org/10.4028/www.scientific.net/msf.804.191.

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This paper focused on the epoxy resin/inorganic filler composites. The electrical and thermal properties of the composites were tested and analyzed at room temperature. The influence of temperature on the thermal conductivity and thermal expansion coefficient was studied. Based on the electrical and thermal properties of the composites, the simulation model of the fully enclosed epoxy resin casting bus bar (FEERCB) was built, and the temperature field distribution of the FEERCB was calculated. T The study results showed that the volume resistivity, dielectric constant, dielectric loss factor a

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