Academic literature on the topic 'Thermal interdiffusion'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Thermal interdiffusion.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Journal articles on the topic "Thermal interdiffusion":
1
Lenoble, O., J. F. Bobo, H. Fischer, Ph Bauer, M. F. Ravet, and M. Piecuch. "Structural properties and thermal stability of Fe/Al2O3 multilayers." Journal of Materials Research 10, no. 12 (December 1995): 3062–67. http://dx.doi.org/10.1557/jmr.1995.3062.
Abstract:
Iron/alumina multilayers have been deposited on sapphire wafers using RF magnetron sputtering. To study the interdiffusion, the multilayers were annealed in a tubular furnace under a 10−7 mbar vacuum, and the samples examined by using a combination of classical diffractometry (θ/2θ) and Grazing Incidence Scattering (GIS) for the phase determination, and Small Angle X-ray Scattering (SAXS) for the superstructure of the multilayers. In all cases, in the as-deposited state the alumina is amorphous and the iron is crystalline in the bcc phase. Thermal anneals at temperatures between 573 and 873 K give evidence for segregation to the interfaces. At higher temperatures, interdiffusion occurs, leading to the formation of different phases. The Fe-Al2O3 interdiffusion coefficient has been evaluated in the temperature range from 873 to 1273 K.
2
Zhang, Chao, Jianjun Song, and Jie Zhang. "Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate." Science of Advanced Materials 13, no. 1 (January 1, 2021): 1–9. http://dx.doi.org/10.1166/sam.2021.3777.
Abstract:
Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mismatch between Si and Ge, it is difficult to directly obtain high quality Ge by epitaxy on Si substrate. Laser recrystallization technology provides a simple, efficient and low-cost way to improve the crystal quality of epitaxial Ge film grown on Si substrate. This technology is essentially a process of thermally induced phase transformation. By controlling the laser process parameters, epitaxial film of a certain thickness is melted, so that lattice rearrangement and recrystallization are achieved, and high-quality thin Ge/Si can be prepared. Laser recrystallization is a high temperature thermal process, and Si–Ge interdiffusion may detrimentally occur. In this paper, the mechanism of Si–Ge interdiffusion is discussed. Based on Fick's law of diffusion, a numerical model for Si–Ge interdiffusion of GOSS is established. On this basis, the process simulation of thermal annealing and laser recrystallization Si–Ge interdiffusion is carried out by Sentaurus Process simulation. The results show that compared with the traditional thermal annealing, the Si–Ge interdiffusion of Ge on Si almost does not occur in the process of laser recrystallization. By reasonably controlling the process parameters of laser recrystallization, the thin Ge film near the Si–Ge interface does not melt, which can not only improve the crystal quality of Ge epitaxial layer, but also effectively avoid the Si–Ge interdiffusion in the process of laser recrystallization. Through this research, we have aimed at predicting and control the Si–Ge interdiffusion, providing an important technical reference for the preparation of high quality GOSS by laser recrystallization technology.
3
Filipek, Robert, Marek Danielewski, E. Tyliszczak, M. Pawełkiewicz, and S. Datta. "Thermal Stability of NiAl-Base Coatings for High Temperature Application." Defect and Diffusion Forum 237-240 (April 2005): 709–14. http://dx.doi.org/10.4028/www.scientific.net/ddf.237-240.709.
Abstract:
Aluminide diffusion coatings act as a remedy against the aggressive environments in which modern aero-gas turbines operate. Platinum addition to basic aluminide coatings significantly improves the oxidation resistance of these coatings. The increase in operating temperatures of industrial energy systems and gas turbines, has led to the extensive use of coatings capable of providing improved service life. Interdiffusion plays a critical role in understanding the integrity of such coatings. The Danielewski-Holly model of interdiffusion which allows for the description of a wide range of processes (including processes stimulated by reactions at interfaces) is employed for studying of interdiffusion in the Pt-modified β-NiAl coatings. Using the inverse method the intrinsic diffusivities of Ni, Al and Pt were calculated. Such obtained diffusivities were subsequently used for modelling of thermal stability of Pt-modified aluminide coatings in air and in argon atmosphere.
4
Li, Wei Zhou, Yue Qiao Li, Dan Qing Yi, and Hui Qun Liu. "Microstructures and Interfacial Reaction of CrON Diffusion Barrier in the NiCrAlY-CrON Duplex Coating System during Thermal Treatment." Advanced Materials Research 239-242 (May 2011): 206–13. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.206.
Abstract:
To decrease the interdiffusion, CrON interlayer as a diffusion barrier was introduced into the interface of NiCrAlY overlayer and DSM11 substrate. The microstructure and effect of the diffusion barrier were investigated. It was found that the as-deposited CrON diffusion barrier was comprised of Cr2O3and CrN. During thermal treatment (including vacuum heat treatment and thermal exposure), the diffusion barrier was first transformed to Al2O3and Cr2N, then to Al2O3dominant interlayer, and porous mixed-oxides including TiO2and NiCr2O4spinels were detected in the interdiffusion zone between the diffusion barrier and the substrate. The presence of α- Al2O3in the diffusion barrier was the main reason for suppressing the interdiffusion. The interfacial reaction mechanism in the diffusion barrier was discussed by elemental diffusion and chemical reaction thermodynamics.
5
Martins, Ilson C., Guilherme Z. Soriano, Michelangelo Durazzo, Elita F. Urano de Carvalho, Léa Sarita Montagna, and Adonis M. Saliba-Silva. "Thermal Interdiffusion Products of U-10Mo in Al Matrix." Materials Science Forum 660-661 (October 2010): 69–75. http://dx.doi.org/10.4028/www.scientific.net/msf.660-661.69.
Abstract:
New nuclear fuel material with high density in uranium is envisaged for intense irradiation research reactors. The alloy U-Mo has been researched as a feasible candidate to be used in such reactors. This nuclear fuel is conceived to be used encapsulated in aluminum matrix. Nevertheless, there are interaction products of U-Mo/Al which form porosity during irradiation, leading to routine operation harms in research reactors. This interaction is due to solid solution interdiffusion of species, mainly of Al towards U-Mo region forming reaction products. This interaction could be studied by on-pile method, observing the occurrence of formed products during irradiation, but this method is costly and used only for long term experiments in very few reactors in the world. For this, several out-of-pile studies using heat treatments of diffusion pairs are carried out at adequate temperatures and times, just below the -phase eutectoid temperature to simulating the interdiffusion and formation U-Mo-Al phases. In the present study, it was employed a new developed assembling method to prepare interdiffusion pairs by immersing sliced U-10Mo sticks inside molten Al. These samples are made by induction furnace, in temperature range ~660-670 °C, under controlled argon atmosphere, in order to entrap molten Al around U-Mo sticks and so keeping this entangled structure after solidification. The interdiffusion pairs are then cut and prepared for treatments. This novel sample preparation guarantees full contact between the U-Mo and Al without oxidation contact, creating so, the ideal conditions for interdiffusion investigation of the interfaces of Al/U-Mo. Preliminary results to study interaction products where achieved by heat treatments during 5h at 550°C. Observations and calculations from SEM/EDS microstructures and XRD diffractograms revealed few microns interaction layer between the matrix and the fuel material, resembling phases reported in the literature for the interaction products between U-Mo-Al. This layer is mainly composed by Al and U, Mo phases, probably (U, Mo)Al3 and phases containing Si, as U3Si5 and a proposed one Al2Si3U3 that fits better to XRD spectrum of experimented diffusion pairs.
6
Brunel, M., S. Enzo, M. Jergel, S. Luby, E. Majkova, and I. Vavra. "Structural characterization and thermal stability of W/Si multilayers." Journal of Materials Research 8, no. 10 (October 1993): 2600–2607. http://dx.doi.org/10.1557/jmr.1993.2600.
Abstract:
Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.
7
Anderson, G. W., M. Pakala, and Y. Huai. "Spin-valve thermal stability: interdiffusion versus exchange biasing." IEEE Transactions on Magnetics 36, no. 5 (2000): 2605–7. http://dx.doi.org/10.1109/20.908530.
8
Tsvetkov, Dmitry, Nadezhda Tsvetkova, Ivan Ivanov, Dmitry Malyshkin, Vladimir Sereda, and Andrey Zuev. "PrBaCo2O6−δ-Ce0.8Sm0.2O1.9 Composite Cathodes for Intermediate-Temperature Solid Oxide Fuel Cells: Stability and Cation Interdiffusion." Energies 12, no. 3 (January 29, 2019): 417. http://dx.doi.org/10.3390/en12030417.
Abstract:
The single-phase oxide PrBaCo2O6−δ and composites (100 − y)PrBaCo2O6−δ-yCe0.8Sm0.2O1.9 (y = 10–30 wt.%) were investigated as cathode materials for intermediate-temperature solid oxide fuel cells. The chemical compatibility, cation interdiffusion, thermal expansion and dc conductivity were studied. As a result, strong interdiffusion of Pr and Sm was found between PrBaCo2O6−δ and Ce0.8Sm0.2O1.9. This leads to only insignificantly decreasing thermal expansion coefficient of composite with increasing fraction of Ce0.8Sm0.2O1.9 and, thus, mixing PrBaCo2O6−δ with Ce0.8Sm0.2O1.9 does not improve thermal expansion behavior of the cathode material. Moreover, formation of poorly-conducting BaCeO3, caused by chemical interaction between the double perovskite and doped ceria, was shown to lead to pronounced drop in the electrical conductivity of the composite cathode material with increasing Ce0.8Sm0.2O1.9 content.
9
Chen, Zun, Jinyan Zhong, Shanglin Yang, Songmei Li, Jianhua Liu, and Mei Yu. "The Interdiffusion Behavior of NiCoCrAlYHf Coating Deposited by Arc Ion Plating on Carburized Ni-Based Single Crystal Superalloy." Materials 14, no. 23 (December 2, 2021): 7401. http://dx.doi.org/10.3390/ma14237401.
Abstract:
In the present study, arc ion plating (AIP) was used to prepare a NiCoCrAlYHf coating (HY5 coating) on a carburized third-generation single-crystal superalloy DD10. The interdiffusion behavior of the carburized superalloy with an HY5 coating was investigated for a 1000 h oxidation time at 1100 °C. Carburization enhanced the interfacial bonding force and improved the microstructure of the NiCoCrAlYHf coating. An interdiffusion zone (IDZ) formed after a 300 h oxidation time, and the formation of a carburized layer effectively suppressed an inward diffusion of cobalt, aluminium, and chromium to the DD10 superalloy as well as an outward diffusion of nickel and refractory elements for instance rhenium and tungsten to the HY5 coating that occurred in static air at 1100 °C. The roles of the carburized layer in affecting thermal cyclic oxidation and element interdiffusion were studied. Subsequently, a modified form of the Boltzmann–Matano analysis was used to present the interdiffusion coefficients of aluminium.
10
Kim, Dasom, Kyungju Kim, and Hansang Kwon. "Interdiffusion and Intermetallic Compounds at Al/Cu Interfaces in Al-50vol.%Cu Composite Prepared by Solid-State Sintering." Materials 14, no. 15 (July 31, 2021): 4307. http://dx.doi.org/10.3390/ma14154307.
Abstract:
Al–Cu composites have attracted significant interest recently owing to their lightweight nature and remarkable thermal properties. Understanding the interdiffusion mechanism at the numerous Al/Cu interfaces is crucial to obtain Al–Cu composites with high thermal conductivities. The present study systematically investigates the interdiffusion mechanism at Al/Cu interfaces in relation to the process temperature. Al-50vol.%Cu composite powder, where Cu particles were encapsulated in a matrix of irregular Al particles, was prepared and then sintered at various temperatures from 340 to 500 °C. Intermetallic compounds (ICs) such as CuAl2 and Cu9Al4 were formed at the Al/Cu interfaces during sintering. Microstructural analysis showed that the thickness of the interdiffusion layer, which comprised the CuAl2 and Cu9Al4 ICs, drastically increased above 400 °C. The Vickers hardness of the Al-50vol.%Cu composite sintered at 380 °C was 79 HV, which was 1.5 times that of the value estimated by the rule of mixtures. A high thermal conductivity of 150 W∙m−1∙K−1 was simultaneously obtained. This result suggests that the Al-50vol.%Cu composite material with large number of Al/Cu interfaces, as well as good mechanical strength and heat conductance, can be prepared by solid-state sintering at a low temperature.
Dissertations / Theses on the topic "Thermal interdiffusion":
1
Yu, Xiaoxiao. "High Throughput Assessment of Multicomponent Alloy Materials." Research Showcase @ CMU, 2018. http://repository.cmu.edu/dissertations/1150.
Abstract:
Multicomponent metal alloys play an essential role in many technologies and their properties must be optimized by rational selection of the alloy’s components and its fractional composition of each. High-throughput materials synthesis allows us to prepare Composition Spread Alloy Films (CSAFs), sample libraries that contains all possible compositions of a binary or ternary alloy. In our lab, a Rotatable Shadow Mask (RSM) – CSAF deposition tool has been developed for the creation of CSAFs. Such CSAFs can be prepared with composition gradients and/or thickness gradients in arbitrarily controlled directions and on a variety of substrates. Once prepared, the CSAF libraries can be characterized thoroughly using a variety of highthroughput spectroscopic methods. Their bulk composition is mapped across the library using Energy Dispersive X-ray spectroscopy (EDX). The near-surface compositions are mapped across composition space using X-ray Photoemission Spectroscopy (XPS). Finally, the electronic structure can be mapped using UV photoemission spectroscopy (UPS) and valence band XPS. Once characterized, these CSAFs are being used for high-throughput studies of alloy catalysis and thermal properties of the alloys and of alloy-substrate interfaces. First of all, PdzCu1-z CSAF was prepared to show that alloy nanoparticles (aNPs) and thin films can adopt phases that differ from those of the corresponding bulk alloy. The mapping of XPS-derived core level binding energy shifts across PdzCu1-z SCSNaP library shows a promising result that the FCC phase can be dimensionally stabilized over the composition range where B2 phase exists in the bulk. This observation can potentially improve the performance of PdzCu1-z NP catalysts in H2 separation. Secondly, the relationship between catalyst activity-electronic structure-composition has been investigated. A high throughput characterization of electronic structure (valence band energy) of binary PdxAg1-x and ternary PdxCuyAu1-x-y CSAFs were performed by XPS. This XPS-derived valence band center is compared with UPS-derived data across PdxCuyAu1-x-y CSAFs. In addition, H2-D2 exchange reaction was studied on PdxAg1-x CASF. A higher HD formation rate is experimentally observed but cannot be predicted by the Langmuir-Hinshelwood model when the surface coverage is saturated. However, the proposed H2-D2 exchange mechanism (breakthrough model) involved with surface and subsurface hydrogen reaction is investigated to produce a same reaction order as Langmuir-Hinshelwood mechanism, which cannot explain the experimental observation. Furthermore, the thermal interface conductance (G) was studied as a function of metal alloy composition. A high-throughput approach to preparation, characterization, and measurement of G was also demonstrated to study the thermal property of alloyed materials. Our result in studying the G across the AuxY1-x (Y = Pd and Cu) CSAFs-dielectric interfaces has shown a linear relationship with alloy composition, which monotonically increases with decreasing Au (at. %). Lastly, the effect of interdiffusion in metal films on G at metal-dielectric interface was also examined. The XPS depth profiling was designed to experimentally determine the temperature effect on compositional profiles in the Au-Cu system, and how to further influence G. This study provides fundamental understanding of stability of adhesion layer of Cu and the effect of interdiffusion in Cu-Au alloy on the heat dissipation. All in all, the key value to these CSAF libraries is that they enable measurement of important alloy properties across entire binary or ternary alloy composition spaces, without the need to prepare and characterize numerous discrete composition samples.
2
Täck, Ulrike. "The Influence of Cobalt and Rhenium on the Behaviour of MCrAlY Coatings." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2009. http://nbn-resolving.de/urn:nbn:de:swb:105-3210357.
Abstract:
Superalloys are widely applied as materials for components in the hot section of gas turbines. As superalloys have a limited oxidation life, the application of a coating is vital. The most commonly applied coatings in stationary gas turbines are MCrAlY coatings. Since the turbine components are exposed to high cyclic thermal stresses, MCrAlY coatings must also show a high thermal fatigue resistance. In this thesis, the effect of Cobalt and Rhenium on microstructure, oxidation and thermal fatigue of NiCoCrAlY coatings is presented. Additionally the condition of the coatings after testing in an industrial gas turbine is shown. The influence of Cobalt and Rhenium on coating microstructure was investigated by thermodynamic modelling and by metallography. It could be shown that both elements reduce the γ`-phase fraction and increase the β-phase fraction owing to an expansion of the γ+β field in the phase diagram. Modelling showed that Rhenium promotes the formation of α-Cr, which could be explained by a shift of the α-Cr solvus to higher temperatures and lower Cr concentrations. In the real coatings Re causes the precipitation of TCP-phase. The oxide scale growth rate is increased by Cobalt and Rhenium and it appears that Yttrium plays a significant role for that effect. Coating consumption due to simultaneous oxidation and interdiffusion could be decreased by the application of Cobalt and Rhenium. In thermal fatigue testing Rhenium reduces the time to crack initiation and increases crack propagation rate, although it could be shown that Rhenium increases the creep resistance of the coating. The effect could be explained by the influence of Rhenium on the microstructure, which increases creep resistance, but also reduces the ductility of the coating.
3
Cavaletti, Eric. "Etude et développement de barrière de diffusion pour les sous-couches de système barrière thermique." Thesis, Toulouse, INPT, 2009. http://www.theses.fr/2009INPT037G/document.
Abstract:
A haute température, l’interdiffusion entre un superalliage et son revêtement protecteur (ß-NiAl ou ß- NiPtAl) dégrade à la fois la protection contre l’oxydation, par modification de la composition chimique du revêtement, et la microstructure du superalliage (3ième et 4ième générations) par formation de Zones de Réaction Secondaires (SRZ). Le but de cette étude a donc été (1) de développer des barrières de diffusion (BD) constituées d’une dense précipitation de phases a-W après traitement sous vide (BD simple) ou chromisation en phase vapeur (BD enrichie en chrome) (2) de mettre au point une méthode pour en étudier l’efficacité. Des mesures de concentration chimique (à partir de cartographies spectrales EDS), couplées à des ajustements des comportements en oxydation cyclique en utilisant le modèle « p-kp », et le développement d’un modèle « p-kp-ß » ont permis de montrer l’efficacité de la BD selon sa composition et la durée de vieillissement. Pour des longues durées de vieillissement, l’efficacité de la BD se réduit par la dissolution des précipités d’a-W dans les phases y’ et y formées à cause de la dégradation des propriétés protectrices du revêtement ß NiPtAl (augmentation de l’écaillage de l’oxyde formé et de la cinétique d’oxydation). Plusieurs causes probables de cette dégradation ont pu être déterminées, soit dues aux procédés (pollution au soufre) soit liées à la mise en place de la BD : augmentation de la transformation martensitique, enrichissement en tungstène et présence de précipités d’alpha chrome. Enfin, il a été montré que si l’initiation des SRZ est modifiée par l’ajout de la BD, leur cinétique de propagation ne l’est pas et est essentiellement dépendante de la composition de l’alliage. Un modèle de propagation des SRZ décrivant les évolutions chimiques locales de part et d’autres de l’interface « SRZ / superalliage » a été proposé. L’ajout de chrome à la BD permet d’inhiber la formation des SRZ, une couche riche en phases TCP remplace alors la SRZAt high temperature, interdiffusion between a superalloy and its protective coating (ß-NiAl or ß- NiPtAl) degrades the oxidation protection by modifying the chemical composition of the coating. It also degrades the 3rd et 4th generation superalloy microstructure due to the formation of Secondary Reaction Zones (SRZ). As a consequence, the aim of this study was (1) to develop diffusion barriers (DB) composed of a dense precipitation of a-W phases after a thermal treatment under vacuum (simple DB) or a vapour phase chromisation (Cr enriched DB), (2) to develop a method for quantifying the DB efficiency. Chemical concentration measurements (with EDS spectral maps) coupled with the « p-kp » modelling of the cyclic oxidation kinetics, and the development of the model « p-kp-ß » have permitted to study DB efficiency as a function of its composition and its high temperature ageing. For long ageing duration, the efficiency of the DB is reduced. Indeed, it is shown that the DB degrades the protection character of the ß-NiPtAl by increasing the oxide scale spallation and of its growth kinetic. This, in turns, accelerates the ß to y’ and y phases transformation and then increases the a-W precipitates dissolution. Some likely causes of this degradation have been determined, either due to the process (sulphur pollution) or intrinsic of the DB addition (increase of the martensitic transformation, enrichment in tungsten and a-Cr formation in the coating). Finally, it has been proved that DB addition modifies the SRZ initiation but not their propagation kinetic, which only depends on the superalloy local composition. A SRZ propagation model which describes local chemical evolutions on both sides of the « SRZ / superalloy » interface was proposed. The addition of chromium to the DB permits to inhibit the SRZ formation. In this case, a layer rich in TCP platelets replaces the SRZ
4
Tardot, Alain. "Diffraction de rayons X et interdiffusion dans les superréseaux CdTe/CdZnTe et CdTe/HgTe." Grenoble 1, 1993. http://www.theses.fr/1993GRE10090.
Abstract:
Ce travail concerne la caracterisation structurale et l'etude de l'interdiffusion dans les superreseaux contraints cdte/cdznte et cdte/hgte, elabores par epitaxie par jets moleculaires, au moyen de la double diffraction de rayons x. Les parametres structuraux (composition, epaisseur, etat de deformation) sont obtenus de facon precise en utilisant conjointement l'experience et la simulation en theorie cinematique. Les coefficients d'interdiffusion des couples cd/zn (400c) et cd/hg (200c) sont mesures par diffraction x. Ils permettent de calculer les profils de concentration des superreseaux en fonction de la temperature et du temps de recuit. Par extrapolation, nous precisons les conditions de croissance pour obtenir des interfaces raides, qui sont necessaires pour des dispositifs optoelectroniques performants
5
Saidi, Bilel. "Metal gate work function modulation mechanisms for 20-14 nm CMOS low thermal budget integration." Toulouse 3, 2014. http://www.theses.fr/2014TOU30300.
Abstract:
Afin de poursuivre la miniaturisation des dispositifs CMOS, l'empilement HfO2/Métal a remplacé l'empilement SiO2/polySi. Cependant, la diffusion incontrôlée des espèces chimiques dans ces nouveaux empilements fabriqués avec un fort budget thermique compromet l'obtention des travaux de sortie (EWF) et des épaisseurs d'oxyde équivalent (EOT) définis par l'ITRS. Une solution consiste à utiliser une intégration à plus bas budget thermique. Avec cette nouvelle approche, l'objectif de ce travail de thèse était de comprendre les paramètres physiques permettant d'obtenir une EOT<1nm et des EWF permettant une co-intégration nMOS et pMOS pour des nœuds futurs CMOS 20-14 nm. En nous appuyant sur différents méthodes d'analyse physico-chimique (STEM EDX, TOF-SIMS et XPS), la distribution spatiale des éléments et leurs liaisons chimiques au sein d'empilements de taille nanométrique ont été discutées et, sur la base de considérations thermodynamiques, corrélées aux valeurs mesurées de l'EOT et EWF. Nous avons démontré pour la première fois un écart de ~0. 8eV entre une électrode TiAlNx déficitaire et riche en azote, déposée sur HfO2. Ces résultats ont été obtenus après avoir identifié les mécanismes qui contrôlent l'EWF et l'EOT dans des empilements plus simples TiN/Ti, Al et TiAl. Les grilles HfO2/TiAlNx ne sont cependant pas stables thermiquement. Nous avons alors proposé deux systèmes métalliques plus simples et plus stables utilisant des alliages TaNix et NiTix obtenus par interdiffusion dans les empilements HfO2/Ta/Ni et de HfO2/Ni/Ti. Ces structures de grilles à base de Ni apparaissent prometteuses pour une co-intégration CMOS à bas budget thermiqueTo continue CMOS scaling, the HfO2/metal gate stack replaced the historical SiO2/PolySi gate stack. But the uncontrolled interdiffusion and reactivities of the new gate materials integrated with the classical high thermal budget approach appear to be a roadblock to reach the effective work function (EWF) and equivalent oxide thickness (EOT) ITRS targets. One solution consisted in implementing an approach with a lower thermal budget. Using this new approach, the aim of this thesis work was to understand the physical mechanisms, which enable to reach an EOT<1nm and an EWF relevant for nMOS and pMOS co-integration as required for the next 20-14nm CMOS nodes. Using spatially resolved TEM/EDX analyses and macroscopic TOF-SIMS and XPS techniques, elemental distributions and chemical bonds across nanometric-sized stacks were discussed and, based on thermodynamic considerations, correlated with the measured EWF and EOT. We showed for the first time that the modulation of nitrogen during TiAlN deposition on HfO2 results in a ~0. 8eV EWF shift between the N-poor and N-rich HfO2/TiAlNx electrodes. The TiAlN complex system was understood after the identification of the EWF and EOT modulation mechanisms in the simple gate stacks TiN/Ti, Al or TiAl. Although TiAlNx electrodes define the best compromise for a variable EWF with a sub-nm EOT, it exhibits a low thermal stability. Therefore, we investigated two simpler metallic and stable systems using TaNix and NiTix alloys resulting from thermally assisted Ni-Ta and Ni-Ti interdiffusion in HfO2/Ta/Ni and HfO2/Ni/Ti stacks, respectively. These Ni-based electrodes are shown to be promising for a low thermal budget CMOS co-integration
6
Audigié, Pauline. "Modélisation de l'interdiffusion et du comportement en oxydation cyclique de superalliages monocristallins à base de nickel revêtus d'une sous-couche γ-γ’ riche en platine. Extension aux systèmes barrière thermique." Phd thesis, Toulouse, INPT, 2015. http://oatao.univ-toulouse.fr/14280/1/Audigie.pdf.
Abstract:
Les systèmes barrière thermique actuels connaissent une importante dispersion de durées de vie liée principalement aux ondulations de surface du revêtement métallique β-(Ni,Pt)Al provoquant l’écaillage du dépôt céramique. Les revêtements γ-γ’ riches en platine sont étudiés en tant qu’alternative au système actuel. Ce travail de thèse s’est intéressé à l’élaboration des revêtements γ-γ’ riches en platine sur un superalliage à base de nickel, l’AM1 à partir de procédés conventionnels : dépôt électrolytique de platine et aluminisation courte. Les mécanismes de dégradation par oxydation cyclique à 1100°C ont été étudiés sur des systèmes revêtement/AM1 et sur des systèmes barrière thermique. Pour comparaison, trois types de revêtement ont été élaborés : γ-γ’ Pt seul, γ-γ’ Pt+Al et β-(Ni,Pt)Al. Ces essais ont mis en évidence une meilleure tenue à l’oxydation cyclique des systèmes revêtus γ-γ’ Pt+Al comparée aux deux autres systèmes revêtus. L’importance de l’ajout d’aluminium dès l’élaboration sur la tenue à l’oxydation cyclique a été soulignée. La modélisation p-kp a mis en avant une augmentation de la proportion d’écaillage au cours du temps du fait de la dégradation de l’interface métal/oxyde et une augmentation du kp du fait de la formation d’un oxyde à croissance plus rapide. Outre l’oxydation, les phénomènes d’interdiffusion lors des tous premiers instants à haute température ont été étudiés à partir de matériaux modèles (Ni13Al et Ni11Al10Cr) et de revêtements de Pt et/ou de Pt-Ir. Ces essais ont mis en avant la rapide formation de la phase α-NiPtAl, les transformations de phases et les chemins de diffusion à 1100°C dans les systèmes Ni-Al-Pt et Ni-Al-Cr-Pt. L’effet du chrome et de l’iridium sur les cinétiques de diffusion a été évalué. La modélisation de l’interdiffusion a mis en évidence les interactions chimiques entre les espèces et une sursaturation en lacunes dans la zone d’interdiffusion prouvant que l’effet Kirkendall est responsable de la formation des pores.
7
Kaur, Manpreet. "Dual Spin-Cast Thermally Interdiffused Polymeric Photovoltaic Devices." Diss., Virginia Tech, 2011. http://hdl.handle.net/10919/77159.
Abstract:
An in depth study of the performance of thermally interdiffused concentration gradient polymer photovoltaic devices is carried out with particular attention to the effect of the thickness and the thermal treatments on the power conversion efficiency, short circuit current, open circuit voltage and other key electrical properties. Bilayer films of sequentially spin-cast donor and acceptor materials are exposed to various heat treatments in order to induce the interdiffusion. The depth profiles show concentration gradients in the donor and acceptor as a result of interdiffusion and these devices show an order of magnitude increase in the device performance compared to the bilayer devices. Dual spin-cast poly (3-octylthiophene-2,5-diyl) (P3OT)- [6,6] phenyl C61 butyric acid methyl ester (PCBM) and poly (3-hexylthiophene-2,5-diyl) (P3HT)-PCBM interdiffused devices are studied in detail by varying the thickness of the donor and acceptor layers as well as the annealing conditions for initial polymer layer and the time and temperature of the interdiffusion process.
Auger spectroscopy and X-ray photoelectron spectroscopy along with ion beam milling are used to investigate the concentration gradient formed as a result of the interdiffusion. The sulfur signal present in the P3OT and P3HT backbone is detected to identify the concentration profiles in the P3OT-PCBM and P3HT-PCBM devices. The interdiffusion conditions and thickness of the active layers have been optimized to obtain the highest power conversion efficiency. The best device performance of the P3OT-PCBM interdiffused devices is achieved when the interdiffusion is carried out at 150°C for 20 minutes and the P3OT thickness is maintained at 70 nm and the PCBM thickness at 40-50 nm. The highest efficiency achieved for P3OT-PCBM interdiffused devices is 1.0% under AM1.5G solar simulated spectrum.
In order to further increase the efficiency, P3OT is replaced by (P3HT) which has higher hole mobility. P3HT- PCBM based concentration gradient devices show improved device performance over P3OT-PCBM devices. Power conversion efficiency of the order of ~3.0% is obtained for P3HT-PCBM interdiffused devices when the interdiffusion is carried out at 150°C for 20 minutes. For both P3OT:PCBM and P3HT:PCBM devices, the optimum performance occurs when the concentration gradient extends across the entire film and is correlated with an increase in the short circuit current density and fill factor as well as a decrease in the series resistance. The results demonstrate that an interdiffused bilayer fabrication approach is a novel and efficient approach for fabrication of polymer solar cell devices.
In addition, porphyrin derivative 5, 10, 15, 20-Tetraphenyl-21H, 23H-porphine zinc (ZnTPP) is studied as a new donor material for organic solar cells. ZnTPP: PCBM blend devices are investigated in detail by varying the weight ratio of the donor and acceptor materials in blend devices. The devices with ZnTPP: PCBM in 1:9 ratios showed the best device performance and the efficiency of the order of 0.2% is achieved under AM1.5G solar simulated conditions.
Trimetallic Nitride Tempelated (TNT) endohedral fullerenes are also examined in this thesis as the novel acceptor materials. Bulk heterojunction or blend devices are fabricated with P3HT as the donor material and several TNT endohedral fullerenes as the acceptor material. Y3N@C₈₀PCBH based devices which are annealed both before and after the electrode deposition show improvement in the device performance compared to devices that are only annealed before the electrode deposition. The highest power conversion efficiency achieved for TNT endohedral fullerene devices is only 0.06%, suggesting that substantial additional work must be done to optimize the compatibility of the donor and acceptor as well as the device fabrication parameters.Ph. D.
8
Drees, Martin. "Polymer/Fullerene Photovoltaic Devices - Nanoscale Control of the Interface by Thermally-controlled Interdiffusion." Diss., Virginia Tech, 2003. http://hdl.handle.net/10919/27823.
Abstract:
In this thesis, the interface between the electron donor polymer and the electron acceptor fullerene in organic photovoltaic devices is studied. Starting from a bilayer system of donor and acceptor materials, the proximity of polymer and fullerene throughout the bulk of the devices is improved by inducing an interdiffusion of the two materials by heating the devices in the vicinity of the glass transition temperature of the polymer. In this manner, a concentration gradient of polymer and fullerene throughout the bulk is created. The proximity of a fullerene within 10 nm of any photoexcitation in the polymer ensures that the efficient charge separation occurs. Measurements of the absorption, photoluminescence, and photocurrent spectra as well as I-V characteristics are used to study the interdiffusion and its influence on the efficiency of the photovoltaic devices. In addition, the film morphology is studied on a microscopic level with transmission electron microscopy and with Auger spectroscopy combined with ion beam milling to create a depth profile of the polymer concentration in the film.
Initial studies to induce an interdiffusion were done on poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as the electron donor polymer and the buckminsterfullerene C60 as the electron acceptor. Interdiffused devices show an order of magnitude photoluminescence quenching with concomitant increase in the photocurrents by an order of magnitude. Variation of the polymer layer thickness shows that the photocurrents increase with decreasing thickness down to 70 nm due to charge transport limitation. The choice of layer thickness in organic photovoltaic devices is critical for optimization of the efficiency. The interdiffusion process is also monitored in situ and a permanent increase in photocurrents is observed during the heat treatment. Transmission electron microscopy (TEM) studies on cross sections of the film reveal that C60 interdiffuses into the MEH-PPV bulk in the form of >10 nm clusters. This clustering of C60 is a result of its tendency to crystallize and the low miscibility of C60 in MEH-PPV, leading to strong phase separation.
To improve the interdiffusion process, the donor polymer is replaced by poly(3-octylthiophene-2,5-diyl) (P3OT), which has a better miscibility with C60. Again, the photocurrents of the interdiffused devices are improved significantly. A monochromatic power conversion efficiency of 1.5 % is obtained for illumination of 3.8 mW/cm2 at 470 nm. The polymer concentration in unheated and interdiffused films is studied with Auger spectroscopy in combination with ion beam milling. The concentration profile shows a distinct interface between P3OT and C60 in unheated films and a slow rise of the P3OT concentration throughout a large cross-section of the interdiffused film. TEM studies on P3OT/C60 films show that C60 still has some tendency to form clusters.
The results of this thesis demonstrate that thermally-controlled interdiffusion is a viable approach for fabrication of efficient photovoltaic devices through nanoscale control of composition and morphology. These results are also used to draw conclusions about the influence of film morphology on the photovoltaic device efficiency and to identify important issues related to materials choice for the interdiffusion process. Prospective variations in materials choice are suggested to achieve better film morphologies.Ph. D.
9
Gopal, Anamika. "Effects of Thickness, Morphology and Molecular Structure of Donor and Acceptor Layers in Thermally Interdiffused Polymer Photovoltaics." Diss., Virginia Tech, 2007. http://hdl.handle.net/10919/27279.
Abstract:
An in-depth study of concentration gradients in thermally-interdiffused polymer – fullerene photovoltaic devices, with a focus on thickness and heat treatments, is presented in this thesis. Device performance is improved from the bilayer by the creation of a concentration gradient of the donor and acceptor materials throughout the active layer of the device. Concentration gradients are expected to improve device performance by optimizing the charge transfer, transport and collection processes. This is achieved through heat-induced interdiffusion of the two materials at temperatures above the glass transition temperature of the polymer. Investigation of the poly(3-octylthiophene) (P3OT) – C₆₀ system show a three-fold improvement in the external quantum efficiencies (EQE) as compared with bilayer devices.
Auger spectroscopy, combined with argon-ion beam milling, serves to record the concentration depth profile and identify concentration gradients in the device through detection of the sulfur in the P3OT backbone. Concentration gradients are optimized to yield the best devices through a thickness variation study conducted on the P3OT – C₆₀ system for fixed thermal interdiffusion conditions at 118 °C for 5 minutes. An optimum thickness of 40 to 60 nm is obtained for the two materials that yields the ideal morphology of a concentration gradient as recorded by Auger spectroscopy. For such devices, the concentration gradient is seen to extend through the device, ending in a thin layer of pure material at each electrode. A monochromatic power conversion efficiency of 2.05% is obtained for 5.3 mW/cm²⁺ illumination at 470 nm.
A brief study is also presented to optimize the concentration gradient profile through variations of the thermal parameters. The dependence of the concentration gradient on the interdiffusion time and temperature is investigated. The merits of heat treatment on the crystallinity of P3OT and the overall device performance are also discussed. It is shown in some case that devices with annealed P3OT layers show almost twice the EQE as non-annealed P3OT layer devices.
Potential alternatives for C₆₀ in interdiffused devices with P3OT have been presented. [6,6]-phenyl C₆₁-butyric acid methyl ester (PCBM), a well-investigated acceptor for blend devices, is studied as an acceptor in concentration gradient devices. A method for spin-coating uniform bilayers of P3OT and PCBM, without solution damage to either layer, is presented. A thermal variation study of the interdiffusion conditions on this system indicated higher interdiffusion temperatures and times are preferred for P3OT – PCBM systems. For interdiffusion at 150 °C for ten minutes, EQE values approaching 35 % at 500 nm are obtained. Auger spectroscopy studies on this system yielded the same conclusions about the concentration gradient device morphology that gives optimum device output. 1:1 and 1:2 blends of P3OT – PCBM are also studied. The influence of various thermal treatments on these devices is described.
The endohedral fullerene Sc₃N@C₈₀ is introduced as a new acceptor material. The endohedral fullerene consists of Sc₃N cluster enclosed in a C₈₀ cage. An order of magnitude increase is seen in device performance upon sublimation of these molecules on a P3OT layer confirming its effectiveness as an acceptor. Preliminary studies done on this system indicated the need for greater thermal treatment to produce optimum concentration gradients. An in depth study for varying temperatures and times is presented. The best device performance was seen for interdiffusion at 160 °C for 25 minutes. The endohedral fullerene devices also show a long-term deterioration and so best result are presented from a set of devices fabricated within the same time period.
The study of these three donor-acceptor systems confirms that the conclusions on the thickness dependence and device performance study conducted for the P3OT – C₆₀ system extend to other acceptors.
A model of EQE for varying thicknesses based on absorption in the interdiffused concentration gradient regions is also presented. This model effectively highlights the influence of P3OT layer thickness on the trends observed in the EQE. It did not, however, reproduce the experimental thickness variation results for varying C₆₀ thicknesses. Incorporation of the effects of the electric field intensity distribution is expected to correct for this. Suggestions have been given on how this might be achieved.Ph. D.
10
Grummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.
Abstract:
Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively investigated and characterized to assess its viability for high-temperature power electronics applications. The reliability and durability of TLP die-attach was extensively investigated utilizing electrical resistivity measurement as an indicator of material diffusion in gold-indium TLP samples. Criteria of ensuring diffusive stability were also developed. Samples were fabricated by material deposition on glass substrates with variant Au–In compositions but identical barrier layers. They were stressed with thermal cycling to simulate their operating conditions then characterized and compared. Excess indium content in the die-attach was shown to have poor reliability due to material diffusion through barrier layers while samples containing suitable indium content proved reliable throughout the thermal cycling process. This was confirmed by electrical resistivity measurement, EDS, FIB, and SEM characterization. Thermal and mechanical characterization of TLP die-attached samples was also performed to gain a newfound understanding of the relationship between TLP design parameters and die-attach properties. Samples with a SiC diode chip TLP bonded to a copper metalized silicon nitride substrate were made using several different values of fabrication parameters such as gold and indium thickness, Au–In ratio, and bonding pressure. The TLP bonds were then characterized for die-attach voiding, shear strength, and thermal impedance. It was found that TLP die-attach offers high average shear force strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction to the substrate. The influence of various fabrication parameters on the bond characteristics were also compared, providing information necessary for implementing TLP die-attach into power electronic modules for high-temperature applications. The outcome of the investigation on TLP bonding techniques was incorporated into a new power module design utilizing TLP bonding. A full half-bridge inverter power module for low-power space applications has been designed and analyzed with extensive finite element thermo-mechanical modeling. In summary, TLP die-attach has investigated to confirm its reliability and to understand how to design effective TLP bonds, this information has been used to design a new high-temperature power electronic module.Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Book chapters on the topic "Thermal interdiffusion":
1
Tillmann, K., M. Luysberg, A. Fattah, P. Specht, and ER Weber. "Mechanisms of interdiffusion and thermal stability upon annealing of AlAs/GaAs:Be quantum wells grown under low temperature conditions." In Microscopy of Semiconducting Materials 2001, 101–8. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-22.
2
Drees, Martin, Richey M. Davis, and Randy Heflin. "Polymer-Fullerene Concentration Gradient Photovoltaic Devices by Thermally Controlled Interdiffusion." In Organic Photovoltaics, 559–78. CRC Press, 2017. http://dx.doi.org/10.1201/9781420026351-27.
3
Drees, Martin, Richey Davis, and Randy Heflina. "Polymer–Fullerene Concentration Gradient Photovoltaic Devices by Thermally Controlled Interdiffusion." In Optical Science and Engineering. CRC Press, 2005. http://dx.doi.org/10.1201/9781420026351.ch24.
Conference papers on the topic "Thermal interdiffusion":
1
Murawala, P. A., O. Tsuji, Sz Fujita, and Sg Fujita. "Thermal Stability and Interdiffusion at ZnSe/GaAs Interface." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.d-4-4.
2
Gareso, Paulus L., Lan Fu, Manuela Buda, Hark H. Tan, and Chennupati Jagadish. "Suppression of thermal atomic interdiffusion in InGaAs/AlGaAs QW laser structures." In Microelectronics, MEMS, and Nanotechnology, edited by Chennupati Jagadish, Kent D. Choquette, Benjamin J. Eggleton, Brett D. Nener, and Keith A. Nugent. SPIE, 2004. http://dx.doi.org/10.1117/12.523517.
3
Choi, ChangJin, W. Tanner Yorgason, and Nicholas A. Roberts. "Prediction of Thermal Boundary Conductance at the Interface With Phonon Wave-Packet Simulations: The Roles of Vibrational Spectra Differences, Interface Bond Strength, and Inelastic Scattering." In ASME 2016 Heat Transfer Summer Conference collocated with the ASME 2016 Fluids Engineering Division Summer Meeting and the ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/ht2016-7177.
Abstract:
The current study uses phonon wave-packet simulations and calculates the phonon transmission rate to explore the contributions of the mass and the bond energy differences on the thermal boundary conductance at the interface between two dissimilar materials. The impact of interdiffusion and interface bond strength on the thermal boundary conductance are also studied. Results show that the difference in mass and bond energy of materials results in a difference in phonon dispersion relations. Thus the frequency dependence of phonon transmission rate is observed at the interface. The interdiffusion allows high frequency phonons to contribute to phonon energy transport by inelastically scattering into multiple lower frequency phonons. Therefore the different energy distribution at the interface is observed for different wavevectors when there is interdiffusion between two materials which results in increased strain at the interface. It is also found that applying different bond strengths has little effect on thermal boundary conductance at the interface unless this interface bond strength deviates significantly from the commonly used mixing rules.
4
Hollis, K. J. "Plasma Sprayed Zirconium Thermal Diffusion Behavior." In ITSC2011, edited by B. R. Marple, A. Agarwal, M. M. Hyland, Y. C. Lau, C. J. Li, R. S. Lima, and A. McDonald. DVS Media GmbH, 2011. http://dx.doi.org/10.31399/asm.cp.itsc2011p0656.
Abstract:
Abstract Zirconium (Zr) metal is of interest for chemical corrosion protection and nuclear reactor core applications. Inert chamber plasma spraying has been used to produce thin Zr coatings on stainless steel (SS) substrates. The coatings were deposited while using transferred arc (TA) cleaning/heating at 5 different current levels. In order to better understand thermal diffusion governed processes, the coating porosity, grain size and interdiffusion with the substrate were measured as a function of TA current. Low porosity (3.5% to < 0.5%), recrystallization with fine equiaxed grain size (3-8 µm diameter) and varying elemental diffusion distance (0-50 µm) from the coating substrate interface were observed. In addition, the coatings were low in oxygen content compared to the wrought SS substrates. The Zr coatings sprayed under these conditions look promising for highly demanding applications.
5
Lu, Xiaoliang, Kang Yuan, Yueguang Yu, Deming Zhang, and Jianming Liu. "HVOF Spraying MCrAlY Coatings on Single Crystals with Various Sand Blasting Forces." In ITSC2019, edited by F. Azarmi, K. Balani, H. Koivuluoto, Y. Lau, H. Li, K. Shinoda, F. Toma, J. Veilleux, and C. Widener. ASM International, 2019. http://dx.doi.org/10.31399/asm.cp.itsc2019p0746.
Abstract:
Abstract Sand blasting and high-velocity thermal spray processes can produce residual stresses in superalloy substrates that can significantly influence microstructure development. To investigate this effect, single-crystal superalloy substrates were sand blasted using different levels of force (zero, light, and heavy) and then coated with a MCrAlY layer by HVOF spraying. Cross-sectional analysis of an as-sprayed sample revealed a subsurface depletion zone with a composition rich in Mo nano precipitates. Cross-sectional examinations after vacuum heat treating and at various points during oxidation testing showed that elemental interdiffusion occurred between the coating and substrate and that sand blasting intensity has a major influence on the depth of the interdiffusion zones.
6
Kim, Min-Su, and Hiroshi Nishikawa. "Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging." In 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). IEEE, 2014. http://dx.doi.org/10.1109/ltb-3d.2014.6886181.
7
Wu, M., J. Moulin, S. Lani, G. Hallais, C. Renard, and A. Bosseboeuf. "Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging." In 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). IEEE, 2014. http://dx.doi.org/10.1109/ltb-3d.2014.6886174.
8
Tawancy, H. M., and Luai M. Al-Hadhrami. "Role of Platinum in Thermal Barrier Coatings Used in Gas Turbine Blade Applications." In ASME Turbo Expo 2009: Power for Land, Sea, and Air. ASMEDC, 2009. http://dx.doi.org/10.1115/gt2009-59153.
Abstract:
Current technology of thermal barrier coating systems used in gas turbine blade applications relies upon the use of a metallic bond coat, which has a two-fold function: i) it develops a thin layer of aluminum oxide enhancing the adhesion of the ceramic top coat, and ii) it provides an additional resistance to oxidation. It was the objective of this study to develop an understanding of the role of platinum in bond coats of the diffusion-type deposited on a nickel-base superalloy. Two Pt-containing bond coats were included in the study: i) a platinum-aluminide and ii) a bond coat formed by interdiffusion between an electroplated layer of platinum and the superalloy substrate. In both cases, the top ceramic coat was yttria-stabilized zirconia. For reference purposes, a simple aluminide bond coat free of Pt was also included in the study. Thermal exposure tests at 1150 °C with a 24-hour cycling period to room temperature were used to compare the coating performance. Microstructural features were characterized by various electron-optical techniques. Experimental results indicated that Pt acts as a “cleanser” of the oxide-bond coat interface by decelerating the kinetics of interdiffusion between the bond coat and superalloy substrate. This was found to promote selective oxidation of Al resulting in a purer Al2O3 scale of a slower growth rate increasing its effectiveness as “glue” holding the ceramic top coat to the underlying metallic substrate. However, the exact effect of Pt was found to be a function of the state of its presence within the outermost coating layer. Of the two bond coats studied, a surface layer of Pt-rich gamma prime phase (L12 superlattice) was found to provide longer coating life in comparison with a mixture of PtAl2 and beta phase. This could be related to the effectiveness of gamma prime phase as a sink for titanium minimizing its detrimental effect on the adherence of aluminum oxide.
9
Asrar, Nausha. "Lead-Free Solder/Gold Metallization Interdiffusion in Electronic Interconnects – Challenges and their Control." In ISTFA 2008. ASM International, 2008. http://dx.doi.org/10.31399/asm.cp.istfa2008p0053.
Abstract:
Abstract While considerable amount of researches and investigations have been made on lead-free solder joint reliability, limited number of literatures are available on the effect of gold content on lead-free solder joint performance. The challenges of lead-free solder/gold metallization interdiffusion during high temperature application/test are: gold embrittlement, intermetallics growth, void formation, and tin-whisker formation. Tin whiskers causing system failures in earth and space-based applications have been reported. This paper illustrates a few case histories of such challenges. The results confirmed that the synergistic effects of void formation, intermetallic compounds formation due to the thick gold plating, and coefficient of thermal expansion mismatch between organic and ceramic substrates resulted in brittle fracture of the solder joint. The tin whisker formation was attributed to the compressive stress in the tin solder material, which was caused by diffusion of the end-cap metallization, formation of intermetallics, and thermal cycling of the soldered components.
10
Rodriguez, Rogie I., Dimeji Ibitayo, and Pedro O. Quintero. "High Temperature Die Attach by Low Temperature Solid-Liquid Interdiffusion." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52049.
Abstract:
There is a need for electromechanical devices capable of operating in high temperature environments (>200°C) for a wide variety of applications. Today’s wide-bandgap semiconductor based power electronics have demonstrated a potential of operating above 400°C, however they are still limited by packaging. Our group has been conducting research in novel interconnect technologies to develop reliable electronic packaging for high temperature environments. Among the most promising alternative is the Au-Sn eutectic solder (80 wt.% Au - 20 wt.% Sn), which have been widely used due to its excellent mechanical and thermal properties. However, the operating temperature of this metallurgical system is still limited to ∼250°C owing to its melting temperature of 280°C. Therefore, a higher temperature resistant system is much needed, but without affecting the current processing temperature of ∼325°C typically exhibited in most high temperature Pb-Free solders. This paper presents the development and characterization of a fluxless die attach soldering process based on gold enriched solid liquid inter-diffusion (SLID). A low melting point eutectic Au-Sn was deposited in the faces of two substrates, followed by the deposition of a subsequent layer of high melting point material, gold in this instance, in one of the substrates. Deposition of all materials was performed using Jet Vapor Deposition (JVD) equipment where thicknesses were controlled to achieve specific compositions in the mixture. Sandwiched coupons where isothermally processed in a vacuum reflow furnace. Scanning electron microscopy (SEM) was employed to reveal the microstructural evolution of the samples in order to study the interfacial reactions of this fluxless bonding process. EDS analysis was used to identify the intermetallic formation and to characterize the joint in an attempt to study the kinetics of this diffusion couple. Post-processed samples confirmed the inter-diffusion mechanism evidenced by the formation of sound joints between the two substrates. As expected, it was observed that the Au was dissolved into the eutectic Au-Sn as the reflow time and temperature were increased.