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Relevant bibliographies by topics / Thermally assisted switching

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Journal articles

Academic literature on the topic 'Thermally assisted switching'

Author: Grafiati

Published: 4 May 2024

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Journal articles on the topic "Thermally assisted switching"

1

Strukov, Dmitri B., and R. Stanley Williams. "Intrinsic constrains on thermally-assisted memristive switching." Applied Physics A 102, no. 4 (2011): 851–55. http://dx.doi.org/10.1007/s00339-011-6269-4.

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2

Taniguchi, Tomohiro, and Hiroshi Imamura. "Spin torque assisted magnetization switching in thermally activated region." Journal of the Korean Physical Society 62, no. 12 (2013): 1773–77. http://dx.doi.org/10.3938/jkps.62.1773.

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3

Iskandarova, I. M., A. V. Ivanov, A. A. Knizhnik, et al. "Simulation of switching maps for thermally assisted MRAM nanodevices." Nanotechnologies in Russia 11, no. 3-4 (2016): 208–14. http://dx.doi.org/10.1134/s1995078016020063.

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4

Guillemenet, Y., L. Torres, G. Sassatelli, and N. Bruchon. "On the Use of Magnetic RAMs in Field-Programmable Gate Arrays." International Journal of Reconfigurable Computing 2008 (2008): 1–9. http://dx.doi.org/10.1155/2008/723950.

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This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to the writing scheme in the FIMS-MTJ device. Moreover, the nonvolatility of such a design based on either an FIMS or a TAS writing scheme should reduce both power consumption and configuration time required

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5

Prejbeanu, Ioan Lucian, Sebastien Bandiera, Ricardo Sousa, and Bernard Dieny. "MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability." Advances in Science and Technology 95 (October 2014): 126–35. http://dx.doi.org/10.4028/www.scientific.net/ast.95.126.

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This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than 500ps can be achieved in these structures with corresponding write energy less than 100fJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concep

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6

El Baraji, M., V. Javerliac, W. Guo, G. Prenat, and B. Dieny. "Dynamic compact model of thermally assisted switching magnetic tunnel junctions." Journal of Applied Physics 106, no. 12 (2009): 123906. http://dx.doi.org/10.1063/1.3259373.

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7

Akagi, F., T. Matsumoto, and K. Nakamura. "Effect of switching field gradient for thermally assisted magnetic recording." Journal of Applied Physics 101, no. 9 (2007): 09H501. http://dx.doi.org/10.1063/1.2710546.

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8

Khalili Amiri, P., P. Upadhyaya, J. G. Alzate, and K. L. Wang. "Electric-field-induced thermally assisted switching of monodomain magnetic bits." Journal of Applied Physics 113, no. 1 (2013): 013912. http://dx.doi.org/10.1063/1.4773342.

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9

Prejbeanu, I. L., W. Kula, K. Ounadjela, et al. "Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 40, no. 4 (2004): 2625–27. http://dx.doi.org/10.1109/tmag.2004.830395.

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10

Azevedo, Joao, Arnaud Virazel, Alberto Bosio, et al. "A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, no. 11 (2014): 2326–35. http://dx.doi.org/10.1109/tvlsi.2013.2294080.

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