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Relevant bibliographies by topics / Thermionic diodes

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Academic literature on the topic 'Thermionic diodes'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Thermionic diodes"

1

Klyuev, Alexey V., Arkady V. Yakimov, and Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 03 (June 29, 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.

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We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

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2

Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

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4

Pan, J., A. Gaibrois, M. Marripelly, J. Leung, S. Suko, M. Lee, and T. Knight. "Effects of Very High Workfunction Metals or Metal Alloys (NiCr) on High Switching Speed, HV Schottky Diodes for Mixed Signal or RF ASIC." MRS Advances 5, no. 37-38 (2020): 1937–46. http://dx.doi.org/10.1557/adv.2020.336.

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AbstractFor high switching speed HV Schottky diodes, with very high work function metal and extremely lightly doped epi, the built-in potential may be too high for thermionic emission to occur, when the applied external voltage is quite low (near VF = 0.07V). If the epi is lightly doped p type, the built-in potential (VBuilt-in: potential difference between the metal and silicon Fermi levels) is 1.0V (measured with CV). If the external bias is 0.1V, near the measured VF, it is not enough to overcome the built-in potential for thermionic emission as illustrated. It is likely that in addition to thermionic emission, tunnelling and diffusion currents also contribute to the total HV Schottky diode forward current. TCAD simulation of HV Schottky diodes with N+ guard bands suggests the potential barrier and electric fields at the Schottky junction are relatively high for thermionic emission to occur, when external bias V ≈ VF. In this paper we report HV Schottky diodes fabricated with various metals, metal alloys and epitaxial films. Metal work functions and epi doping profiles are extracted with high frequency Capacitance-Voltage (CV) technique. 150V of breakdown voltage and very low forward voltage (VF = 0.07V) are demonstrated. The measured data indicate very high work function metal or metal alloy is needed to achieve high switching speed and low forward voltage.

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Shen, Zhihua, Qiaoning Li, Xiao Wang, Jinshou Tian, and Shengli Wu. "Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation." Micromachines 12, no. 7 (June 22, 2021): 729. http://dx.doi.org/10.3390/mi12070729.

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Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results indicate that this device can operate at a stable level in a wide range of temperatures, at around 600 degrees Kelvin above 260 K at 0.2 V voltage bias. Moreover, unlike the conventional vacuum diodes working in field emission regime where the emission current is extremely sensitive to the gap-width between the cathode and the anode, the emission current of the proposed diode shows a weak correlation to the gap-width. These features make this diode a promising alternative to vacuum electronics for large-scale production and harsh environmental applications.

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6

Ilican, Saliha, Mujdat Caglar, Seval Aksoy, and Yasemin Caglar. "XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions." Journal of Nanomaterials 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/6729032.

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The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. Thep-Si/n-ZnOandp-Si/n-FZNheterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (ϕB), and series resistance (Rs) which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde’s function, and Cheung’s method. There is a good agreement between the diode parameters obtained from different methods.

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Kumar, Niraj, Anjana Kumari, Manisha Samarth, Rajiv Kumar, and Tarun Dey. "Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes." Material Science Research India 11, no. 2 (November 3, 2014): 121–27. http://dx.doi.org/10.13005/msri/110205.

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The current –voltage data of the metal –insulator semiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the inter facial layer parameters.The computed current – voltage data are fitted into ideal thermionic emission diffusion equation to see the apparent effect of interfacial parameters on current transport.In presence of interfacial layer the Schottky contact behave as an ideal diode of apparently high barrier height. The behavior of apparent height and ideality factor with the presence of inter facial layer is discussed.

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8

Lee, Moonsang, Chang Wan Ahn, Thi Kim Oanh Vu, Hyun Uk Lee, Yesul Jeong, Myung Gwan Hahm, Eun Kyu Kim, and Sungsoo Park. "Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN." Nanomaterials 10, no. 2 (February 10, 2020): 297. http://dx.doi.org/10.3390/nano10020297.

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In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.

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Ivanov, Pavel A., Igor V. Grekhov, Alexander S. Potapov, Natalya D. Il'inskaya, Oleg I. Kon'kov, and Tatyana P. Samsonova. "Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes." Materials Science Forum 740-742 (January 2013): 877–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.877.

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High-voltage 4H-SiC Schottky Barrier Diodes (SBDs) and Junction Barrier Schottky (JBS) diodes have been fabricated and evaluated. Current-voltage (I-V) characteristics were measured in a wide temperature range. All diodes fabricated showed nearly ideal forward behavior. For SBDs with Schottky Barrier Height (SBH) of 1.12 eV, the reverse I–V characteristics are described well by the thermionic emission model (at voltages varying from several mV to 2 kV and temperatures ranging from 361 to 470 K) if barrier lowering with increasing band bending is taken into account. For SBDs with SBH of 1.53 eV, no thermionic current was detected in reverse direction at temperatures below ~500 K. The leakage currents appeared only at high reverse voltages and elevated temperatures. The analysis of reverse I-V characteristics allowed to propose dislocation related mechanism of current flow due to the local injection of electrons from metal to semiconductor. It is shown that defect related leakage currents can be significantly reduced by JBS-structure.

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Marshall, Albert C. "A reformulation of thermionic theory for vacuum diodes." Surface Science 517, no. 1-3 (October 2002): 186–206. http://dx.doi.org/10.1016/s0039-6028(02)02063-0.

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Dissertations / Theses on the topic "Thermionic diodes"

1

Kummari, Rani S. "Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides." Connect to resource online, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1266422079.

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2

Ho, Kang Jin. "Studies on Amorphous Silicon Thin Films Doped with Aluminium." Thesis, Indian Institute of Science, 1995. http://hdl.handle.net/2005/157.

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Amorphous Silicon(a-Si) films have attracted the attention of several investigators as it is an economical material for devices. One of the problems that is addressed is the doping of these films after they are prepared. In this thesis, we investigated the effects of doping amorphous Silicon films(prepared by r.f. sputtering) with Aluminium(Al) by thermal diffusion. Amorphous Silicon films have been prepared on glass substrates at optimal process parameters. Then, the a-Si films are coated with Al by vacuum evaporation and subjected to heating in N2 atmosphere in the temperature range 300°C to 600°C for different durations. After etching Al layer, it has been found that some of the films which are heated around 550°C contain filament like polycrystalline regions surrounding islands of a-Si. This structure has been confirmed through Scanning Electron Mi-croscope(SEM) photographs and electrical conductivity measurements. SEM photographs indicate that, bright regions of amorphous material are surrounded by dark regions of relatively higher conducting boundaries. The electrical conductivity study shows that there is sharp increase in conductivity of Al doped films, which is attributed to the conducting polycrystalUne filament. A simple model has been proposed to explain the variation of conductivity of these transformed films, with process parameters and with temperature. Schottky barrier diodes have been fabricated using these transformed materials and their characteristics explained.

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Books on the topic "Thermionic diodes"

1

United States. National Aeronautics and Space Administration., ed. Design of a power management and distribution system for a thermionic-diode powered spacecraft. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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Book chapters on the topic "Thermionic diodes"

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Stephani, Dietrich, Reinhold Schoerner, Dethard Peters, and Peter Friedrichs. "Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes." In Silicon Carbide and Related Materials 2005, 1147–50. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1147.

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Conference papers on the topic "Thermionic diodes"

1

Marshall, Albert C. "Application of revised thermionic theory to MTC diodes." In Space technology and applications international forum - 2001. AIP, 2001. http://dx.doi.org/10.1063/1.1358066.

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2

Hatch, G. L., M. Korringa, and T. P. Sahines. "Thermionic Characteristics of Planar and Cylindrical Oxygen Additive Tungsten-Niobium Diodes." In 22nd Intersociety Energy Conversion Engineering Conference. Reston, Virginia: American Institute of Aeronautics and Astronautics, 1987. http://dx.doi.org/10.2514/6.1987-9125.

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3

Peters, Ralph R., and Todd B. Jekel. "Thermionic diode subsystem model." In Proceedings of the ninth symposium on space nuclear power systems. AIP, 1992. http://dx.doi.org/10.1063/1.41768.

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4

Desplat, J. L. "Tests of a Zirconium Dioxide Electrolytic Cell in a Thermionic Diode." In 27th Intersociety Energy Conversion Engineering Conference (1992). 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1992. http://dx.doi.org/10.4271/929358.

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5

Jelic, Nikola, Janez Krek, and Jozef Duhovnik. "Theory and simulations of a thermionic emissions in a plain diode." In 2013 IEEE 40th International Conference on Plasma Sciences (ICOPS). IEEE, 2013. http://dx.doi.org/10.1109/plasma.2013.6634920.

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6

Deuk Yong Lee and Dean L. Jacobson. "Plasma instability between polycrystalline rhenium electrodes in a cesiated thermionic diode." In Proceedings of the ninth symposium on space nuclear power systems. AIP, 1992. http://dx.doi.org/10.1063/1.41892.

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7

Pascual, Elena, Raul Rengel, and Maria J. Martin. "Monte Carlo analysis of tunneling and thermionic transport in a reverse biased Schottky diode." In 2007 Spanish Conference on Electron Devices. IEEE, 2007. http://dx.doi.org/10.1109/sced.2007.384005.

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8

Onufriyev, Valery V. "Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor." In Space technology and applications international forum - 2001. AIP, 2001. http://dx.doi.org/10.1063/1.1358063.

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9

Onufryev, V. "The results of investigations of high temperature high voltage thermion diode." In 35th Intersociety Energy Conversion Engineering Conference and Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2000. http://dx.doi.org/10.2514/6.2000-2847.

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