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Journal articles on the topic 'Thermionic diodes'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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1

Klyuev, Alexey V., Arkady V. Yakimov, and Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 03 (June 29, 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.

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We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.
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2

Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
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3

Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
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4

Pan, J., A. Gaibrois, M. Marripelly, J. Leung, S. Suko, M. Lee, and T. Knight. "Effects of Very High Workfunction Metals or Metal Alloys (NiCr) on High Switching Speed, HV Schottky Diodes for Mixed Signal or RF ASIC." MRS Advances 5, no. 37-38 (2020): 1937–46. http://dx.doi.org/10.1557/adv.2020.336.

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AbstractFor high switching speed HV Schottky diodes, with very high work function metal and extremely lightly doped epi, the built-in potential may be too high for thermionic emission to occur, when the applied external voltage is quite low (near VF = 0.07V). If the epi is lightly doped p type, the built-in potential (VBuilt-in: potential difference between the metal and silicon Fermi levels) is 1.0V (measured with CV). If the external bias is 0.1V, near the measured VF, it is not enough to overcome the built-in potential for thermionic emission as illustrated. It is likely that in addition to thermionic emission, tunnelling and diffusion currents also contribute to the total HV Schottky diode forward current. TCAD simulation of HV Schottky diodes with N+ guard bands suggests the potential barrier and electric fields at the Schottky junction are relatively high for thermionic emission to occur, when external bias V ≈ VF. In this paper we report HV Schottky diodes fabricated with various metals, metal alloys and epitaxial films. Metal work functions and epi doping profiles are extracted with high frequency Capacitance-Voltage (CV) technique. 150V of breakdown voltage and very low forward voltage (VF = 0.07V) are demonstrated. The measured data indicate very high work function metal or metal alloy is needed to achieve high switching speed and low forward voltage.
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5

Shen, Zhihua, Qiaoning Li, Xiao Wang, Jinshou Tian, and Shengli Wu. "Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation." Micromachines 12, no. 7 (June 22, 2021): 729. http://dx.doi.org/10.3390/mi12070729.

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Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results indicate that this device can operate at a stable level in a wide range of temperatures, at around 600 degrees Kelvin above 260 K at 0.2 V voltage bias. Moreover, unlike the conventional vacuum diodes working in field emission regime where the emission current is extremely sensitive to the gap-width between the cathode and the anode, the emission current of the proposed diode shows a weak correlation to the gap-width. These features make this diode a promising alternative to vacuum electronics for large-scale production and harsh environmental applications.
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6

Ilican, Saliha, Mujdat Caglar, Seval Aksoy, and Yasemin Caglar. "XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions." Journal of Nanomaterials 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/6729032.

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The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. Thep-Si/n-ZnOandp-Si/n-FZNheterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (ϕB), and series resistance (Rs) which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde’s function, and Cheung’s method. There is a good agreement between the diode parameters obtained from different methods.
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7

Kumar, Niraj, Anjana Kumari, Manisha Samarth, Rajiv Kumar, and Tarun Dey. "Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes." Material Science Research India 11, no. 2 (November 3, 2014): 121–27. http://dx.doi.org/10.13005/msri/110205.

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The current –voltage data of the metal –insulator semiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the inter facial layer parameters.The computed current – voltage data are fitted into ideal thermionic emission diffusion equation to see the apparent effect of interfacial parameters on current transport.In presence of interfacial layer the Schottky contact behave as an ideal diode of apparently high barrier height. The behavior of apparent height and ideality factor with the presence of inter facial layer is discussed.
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8

Lee, Moonsang, Chang Wan Ahn, Thi Kim Oanh Vu, Hyun Uk Lee, Yesul Jeong, Myung Gwan Hahm, Eun Kyu Kim, and Sungsoo Park. "Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN." Nanomaterials 10, no. 2 (February 10, 2020): 297. http://dx.doi.org/10.3390/nano10020297.

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In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.
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9

Ivanov, Pavel A., Igor V. Grekhov, Alexander S. Potapov, Natalya D. Il'inskaya, Oleg I. Kon'kov, and Tatyana P. Samsonova. "Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes." Materials Science Forum 740-742 (January 2013): 877–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.877.

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High-voltage 4H-SiC Schottky Barrier Diodes (SBDs) and Junction Barrier Schottky (JBS) diodes have been fabricated and evaluated. Current-voltage (I-V) characteristics were measured in a wide temperature range. All diodes fabricated showed nearly ideal forward behavior. For SBDs with Schottky Barrier Height (SBH) of 1.12 eV, the reverse I–V characteristics are described well by the thermionic emission model (at voltages varying from several mV to 2 kV and temperatures ranging from 361 to 470 K) if barrier lowering with increasing band bending is taken into account. For SBDs with SBH of 1.53 eV, no thermionic current was detected in reverse direction at temperatures below ~500 K. The leakage currents appeared only at high reverse voltages and elevated temperatures. The analysis of reverse I-V characteristics allowed to propose dislocation related mechanism of current flow due to the local injection of electrons from metal to semiconductor. It is shown that defect related leakage currents can be significantly reduced by JBS-structure.
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10

Marshall, Albert C. "A reformulation of thermionic theory for vacuum diodes." Surface Science 517, no. 1-3 (October 2002): 186–206. http://dx.doi.org/10.1016/s0039-6028(02)02063-0.

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11

Lee, J. I., J. Brini, J. Boussey, and C. A. Dimitriadis. "Parameter extraction in non-ideal thermionic emission diodes." Applied Surface Science 142, no. 1-4 (April 1999): 481–84. http://dx.doi.org/10.1016/s0169-4332(98)00724-7.

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12

BRODIE, I. "Noise reduction in space charge limited thermionic diodes." International Journal of Electronics 62, no. 1 (January 1987): 1–7. http://dx.doi.org/10.1080/00207218708920945.

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13

Herrmann, P. P., N. Schlumpf, V. L. Telegdi, and A. Weis. "Design, performance, and theory of long thermionic diodes." Review of Scientific Instruments 62, no. 3 (March 1991): 609–23. http://dx.doi.org/10.1063/1.1142113.

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14

BIARAM, ALIREZA, and HOSEIN ESHGHI. "THE EFFECT OF ETCHING TIME ON RECTIFYING CHARACTERISTIC IN SnO2/p-Si AND SnO2/p-PoSi HETEROJUNCTION SCHOTTKY DIODES." Modern Physics Letters B 27, no. 08 (March 13, 2013): 1350051. http://dx.doi.org/10.1142/s0217984913500516.

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We have fabricated SnO 2/p- Si and SnO 2/p- PoSi heterojunction diodes by spray pyrolysis method. To prepare porous Si substrates, the etching time was varied from 10 to 20 and 30 mins. In these samples, the SEM micrographs showed a distributed pore areas surrounded by columnar walls with various height. The data analysis of the rectified I–V characteristic, using thermionic emission Schottky diode theory, showed that although the barrier height is about 0.5–0.6 eV in all samples other two important diode parameters, i.e. the ideality factor n and the series resistance rs, are strongly etching time-dependant and are increased with increasing the etching time.
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15

Ewing, D. J., Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X. Y. Ma, Tangali S. Sudarshan, and L. M. Porter. "A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC." Materials Science Forum 527-529 (October 2006): 911–14. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.911.

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In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an epilayer grown by chemical vapor deposition. A majority of the diodes displayed ideal thermionic emission when under forward bias, whereas some diodes showed ‘double-barrier’ characteristics with a ‘knee’ in the low-voltage log I vs. V plot. X-ray topography (XRT) and polarized light microscopy (PLM) revealed no correlations between screw dislocations and micropipes and the presence of double-barrier diodes. Depth resolved cathodoluminescence (DRCLS) indicated that certain deep-level states are associated with the observed electrical variations.
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16

Marshall, Albert C. "An equation for thermionic currents in vacuum energy conversion diodes." Applied Physics Letters 73, no. 20 (November 16, 1998): 2971–73. http://dx.doi.org/10.1063/1.122647.

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17

Obukhov, I. A. "Multicomponent Model of Charge Transport in Quantum Semiconductor Devices." Nano- i Mikrosistemnaya Tehnika 23, no. 1 (February 24, 2021): 24–31. http://dx.doi.org/10.17587/nmst.23.24-31.

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A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diodes, electronic, thermionic and optoelectronic devices based on nanowires. In a quasi-classical approximation it goes into a drift-diffusion model.
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18

Tan, Shih-Wei, and Shih-Wen Lai. "A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes." Advances in Materials Science and Engineering 2013 (2013): 1–4. http://dx.doi.org/10.1155/2013/531573.

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This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2(MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.
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19

Erkovan, M., E. Şentürk, Y. Şahin, and M. Okutan. "I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/579131.

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Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.
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20

GÜRSEL, ÜMİT, SONGÜL TARAN, MUHARREM GÖKÇEN, YURDAGÜL ARI, and ABDULKADİR ALLI. "ULTRAVIOLET ILLUMINATION RESPONSIVITY OF THE Au/n-Si DIODES WITH AND WITHOUT POLY (LINOLENIC ACID)-G-POLY (CAPROLACTONE)-G-POLY (T-BUTYL ACRYLATE) INTERFACIAL LAYER." Surface Review and Letters 27, no. 09 (February 19, 2020): 1950207. http://dx.doi.org/10.1142/s0218625x1950207x.

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Au/n-Si (MS) and Au/Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLilPCLPtBA)/n-Si (MPS) diodes were fabricated to investigate the electrical and responsivity effects of interfacial layer on the diodes under ultra violet (UV) illumination. Electrospinning method was used for coating of the PLilPCLPtBA polymer layer on n-Si single crystal as nanofibers. Surface formation and nanofiber characteristics of the polymer layer were investigated by an electron microscope. The current-voltage ([Formula: see text]) measurements of the MS and MPS diodes were carried out in dark and under UV (365 nm) illumination conditions at room temperature. Basic electrical parameters of the diodes; such as reverse bias saturation current ([Formula: see text]), zero bias barrier height [Formula: see text], ideality factor ([Formula: see text]), series resistance ([Formula: see text]) and interface state density ([Formula: see text]) were extracted from the experimental [Formula: see text] measurements by thermionic emission and Norde equations. Also, power law of the photocurrents ([Formula: see text]) and responsivity ([Formula: see text]) behavior were obtained and given comparatively.
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21

Latreche, A. "Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 1 (March 9, 2021): 16–21. http://dx.doi.org/10.15407/spqeo24.01.016.

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In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.
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22

YILDIRIM, N., H. DOGAN, H. KORKUT, and A. TURUT. "DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE." International Journal of Modern Physics B 23, no. 27 (October 30, 2009): 5237–49. http://dx.doi.org/10.1142/s0217979209053564.

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We have prepared the sputtered Ni /n- GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current–voltage (I–V) characteristics of the diodes has been experimentally investigated. Their I–V characteristics have been measured in the temperature range of 60–320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I–V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I–V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni /n- GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.
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23

Naretto, Marco, Denis Perrone, Sergio Ferrero, and Luciano Scaltrito. "Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC." Materials Science Forum 645-648 (April 2010): 227–30. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.227.

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In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power applications. A comparison between different Schottky Barrier Height (SBH) evaluation methods (capacitance-voltage and current-voltage measurements), together with the comparison with other authors’ works, indicates that thermionic current theory is the dominant transport mechanism across the barrier from room temperature (RT) to 450K, while at T < 300K some anomalies in J-V curves appear and SBH and ideality factor significantly change their values. These deviations from ideality are attributed to Schottky barrier inhomogeneities. In particular, a model based on two SBHs seems appropriate to properly describe the electrical behavior of our devices.
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24

Zhang, Teng, Christophe Raynaud, and Dominique Planson. "Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts." European Physical Journal Applied Physics 85, no. 1 (January 2019): 10102. http://dx.doi.org/10.1051/epjap/2018180282.

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Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.
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25

ERTURK, K., M. C. HACIISMAILOGLU, Y. BEKTORE, and M. AHMETOGLU. "TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES." International Journal of Modern Physics B 22, no. 14 (June 10, 2008): 2309–19. http://dx.doi.org/10.1142/s0217979208039496.

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The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.
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26

Stephani, Dietrich, Reinhold Schörner, Dethard Peters, and Peter Friedrichs. "Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes." Materials Science Forum 527-529 (October 2006): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1147.

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We have carefully investigated a number of more than 120 selected chips fabricated on one wafer, by I-V measurements at two different precisely controlled temperatures and precision CV measurements at room temperature. From these measurements the net-doping concentration, the C-V (flat-band) barrier ΦCV, the ideality n, the apparent Richardson constant Aapp and the apparent I-V barrier Φapp have been extracted for each chip. An extremely unique C-V barrier was determined showing a relative standard deviation (sigma over mean) of only 0.086%. Moreover, the average ideality n was found to be as low as 1.028 exhibiting a relative standard deviation of only 0.35%. A clear linear correlation (ρ2 = 0.968) between ideality n and apparent I-V barrier was observed. The effective Richardson constant A** of 4H-SiC in 〈0001〉 directions could therefore be extracted to be most likely in the interval 70 Acm-2K-2 < A** < 80 Acm-2K-2.
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27

Ueno, Kohei, Keita Shibahara, Atsushi Kobayashi, and Hiroshi Fujioka. "Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics." Applied Physics Letters 118, no. 2 (January 11, 2021): 022102. http://dx.doi.org/10.1063/5.0036093.

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28

Журавлев, С. Д., and В. И. Шестеркин. "Токоперехватывающие сетки из анизотропного пиролитического графита в электронных пушках с металлопористым катодом." Журнал технической физики 89, no. 9 (2019): 1464. http://dx.doi.org/10.21883/jtf.2019.09.48075.45-19.

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Presented the results of experimental researches of anisotropic pyrolitic graphite application as a grid structure in high-power devices with the dispenser cathode. The emission characteristics of molybdenum, hafnium and anisotropic pyrolitic graphite in diodes and electron guns versus high-power electron flow, dissipated on test specimen and cathode temperature are given in the article. Also the grid structures made of anisotropic pyrolitic graphite are able to dissipate power of the electron flow 20 times more than grids made of molybdenum and 9 times more than grids made of hafnium without occurrence of spurious thermionic emission are shown in the article.
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29

Méndez-Pinzón, Henry Alberto, Diana Rocío Pardo-Pardo, Juan Pablo Cuéllar-Alvarado, Juan Carlos Salcedo-Reyes, Ricardo Vera, and Beynor Antonio Páez-Sierra. "Análisis de la característica corriente-voltaje de diodos orgánicos emisores de luz (OLEDs) basados en polímeros depositados por spin coating." Universitas Scientiarum 15, no. 1 (January 1, 2010): 68. http://dx.doi.org/10.11144/javeriana.sc15-1.aotc.

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<p>Polymer-based organic light-emitting diodes (OLEDs) with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spin coating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the deposition parameters of the polymer electroluminescent layer MDMO-PPV. <strong>Objective.</strong> In this work the effect of i) the frequency of the spin coater (1000-8000 rpm), ii) the concentration of the MDMO-PPV: Toluene solution, and iii) the material used as cathode (Aluminium or Silver) on the electrical response of the devices, was evaluated through current-voltage (I-V) measurements. <strong>Materials and methods</strong>. PEDOT:PPS and MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodes of aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. <strong>Results.</strong> Diodes prepared with thinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater or by using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have two contributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel current through the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. <strong>Conclusions.</strong> The results fitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainly attributed to hole transport.</p> <p><strong>Key words:</strong> organic semiconductors, OLEDs, electroluminescent polymers, MDMO-PPV, PEDOT:PSS, Spin coating, HOMO, LUMO, carrier injection, thermionic emission.</p><br />
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Hong, Jeongsoo, Ki Hyun Kim, and Kyung Hwan Kim. "Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact." Coatings 9, no. 6 (June 15, 2019): 388. http://dx.doi.org/10.3390/coatings9060388.

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The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection.
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31

Lee, Chunghsin, and Peter E. Oettinger. "Current densities and closure rates in diodes containing laser‐driven, cesium‐coated thermionic cathodes." Journal of Applied Physics 58, no. 5 (September 1985): 1996–2000. http://dx.doi.org/10.1063/1.336009.

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32

Umemoto, Yasunari, William J. Schaff, Hyunchang Park, and Lester F. Eastman. "Effect of thermionic‐field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes." Applied Physics Letters 62, no. 16 (April 19, 1993): 1964–66. http://dx.doi.org/10.1063/1.109638.

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33

Umezawa, Hitoshi, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri, and Shin-ichi Shikata. "Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling." Diamond and Related Materials 15, no. 11-12 (November 2006): 1949–53. http://dx.doi.org/10.1016/j.diamond.2006.08.030.

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34

Kim, Hogyoung, Seok Choi, and Byung Joon Choi. "Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition." Coatings 10, no. 2 (February 24, 2020): 194. http://dx.doi.org/10.3390/coatings10020194.

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Atomic layer deposited AlGaN on GaN substrate with different thicknesses was prepared and the electron transport mechanism of AlGaN/GaN Schottky diodes was investigated. Above 348 K, both 5 and 10 nm thick AlGaN showed that the thermionic emission model with inhomogeneous Schottky barrier could explain the forward current transport. Analysis using a dislocation-related tunneling model showed that the current values for 10 nm thick AlGaN was matched well to the experimental data while those were not matched for 5 nm thick AlGaN. The higher density of surface (and interface) states was found for 5 nm thick AlGaN. In other words, a higher density of surface donors, as well as a thinner AlGaN layer for 5 nm thick AlGaN, enhanced the tunneling current.
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35

Faisal, M., M. Asghar, Khalid Mahmood, Magnus Willander, O. Nur, and Peter Klason. "Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces." Applied Mechanics and Materials 313-314 (March 2013): 270–74. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.270.

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Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.
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36

Rýger, Ivan, Gabriel Vanko, Tibor Lalinský, Jaroslav Dzuba, Martin Vallo, Pavol Kunzo, and Ivo Vávra. "Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor." Key Engineering Materials 605 (April 2014): 491–94. http://dx.doi.org/10.4028/www.scientific.net/kem.605.491.

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In this article we demonstrate the high sensitivity AlGaN/GaN circular HEMT (C-HEMT) hydrogen gas sensor with new gate interfacial Pt/NiO layer. The wide band-gap III-nitride semiconductor heterostructure allows the sensor operation at elevated temperatures. Likewise, the C-HEMT sensing device is easy to prepare because the MESA insulation step can be omitted. Moreover, the I-V characteristics of ring gate diodes with a dominant thermionic emission of electrons can be easly achieved by elimination of tunneling currents induced on the MESA-etched edges. The Pt/NiO stacked gate absorption layer has nanocrystalline structure, what increases the surface-to-volume ratio. Consequently, the hydrogen gas is more efficiently dissociated at low temperature. Comparing to reference Pt/AlGaN/GaN diode sensor, the optimum operation temperature decreases from 250 oC towards 50oC and the hydrogen detection efficiency is enhanced about 10 times. This is desirable for battery-powered sensors with low current consumption. On the other hand, the fabricated sensor shows longer reaction and regeneration time constants. This is due to longer diffusion path that hydrogen atoms must overcome to reach the AlGaN semiconductor surface.
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37

Lee, Kung Yen, Wen Zhou Chen, and Michael A. Capano. "The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes." Materials Science Forum 600-603 (September 2008): 827–30. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.827.

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In this article, the correlation of surface morphological defects and barrier-height inhomogeneities with the electrical characteristics of defective 4H-SiC Schottky barrier diodes (SBDs) before and after chemical-mechanical polishing (CMP) is investigated. The forward characteristics, an ideality factor and a single barrier height of a SBD, remain the same after CMP, so that CMP does not affect SBD characteristics. Most barrier-height inhomogeneities are eliminated or improved after CMP. Therefore, leakage current induced by barrier-height inhomogeneities are improved by CMP as well. In addition, about 40% of SBDs with carrots inside the active areas exhibits double barriers before CMP. This excludes that carrots are a cause of barrier-height inhomogeneities. In reverse-bias mode, CMP reduces reverse leakage current at low bias and increases breakdown voltage due to the reduction of thermionic field emission and elimination of local enhanced electric fields.
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38

Tang, Yi Dan, Xin Yu Liu, Cheng Zhan Li, Yun Bai, Hong Chen, and Cheng Yue Yang. "High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes." Materials Science Forum 1004 (July 2020): 1004–9. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1004.

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The high-temperature (up to 200 °C) reliability analysis of 1200V/100A 4H-SiC JBS under 168 hours of high-temperature storage stress (HTSS), high-temperature reverse bias (HTRB) and high-humidity HTRB (H3TRB) stress test are reported. Results show that, all the statistical distribution of the data consistency is more dispersed after HTSS, HTRB and H3TRB test, which suggests that there are more degradation in the forward voltage and leakage current characteristics of JBS device under high temperature (up to 423K) stress. The increased reverse leakage currents after HTSS and HTRB stresses at different test temperatures are mainly due to the thermionic emission with the image force barrier height lowering. However, it is not the same phenomenon after HTRB stress. And the stability of VR under HTRB test is better than the one under HTSS test, which may be due to the migration and accumulation of charge during exposure to HTRB.
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39

EFEOǦLU, HASAN, and ABDULMECIT TURUT. "THE CURRENT–VOLTAGE CHARACTERISTICS OF THE Au/MBEn-GaAs SCHOTTKY DIODES IN A WIDE TEMPERATURE RANGE." International Journal of Modern Physics B 27, no. 19 (July 15, 2013): 1350088. http://dx.doi.org/10.1142/s0217979213500884.

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The Au/MBE n- GaAs Schottky diodes have been fabricated by us. The slope of the conventional ln (I0/T2) versus (kT)-1 plotted in the temperature range of 120–350 K has given a Richardson constant (RC) of 7.69 A (cmK)-2 which is in close agreement with the value of 8.16 A/cm2 K 2 known for n-type GaAs . The barrier height (BH) value in 40–160 K range has decreased obeying to Gaussian distribution (GD) model of the BH based on thermionic emission current theory. The modified RC plot according to the GD model has given a RC value of 2.45 A (cmK)-2 or a value of 2.38 A (cmK)-2 by taking into account the temperature dependence of the standard deviation. Therefore, we have modified the Richardson's plot using the temperature dependent values of the effective area of the patches introduced by lateral inhomogeneity of the BHs and we have obtained a RC value of 8.10 A (cmK)-2.
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40

Zaman, Muhammad Yousuf, Denis Perrone, Sergio Ferrero, Luciano Scaltrito, and Marco Naretto. "Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures." Materials Science Forum 711 (January 2012): 174–78. http://dx.doi.org/10.4028/www.scientific.net/msf.711.174.

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Various attempts have been made to evaluate the correct value (A*=146 A/cm2.K2) ofRichardson's constant. In 2005 S. Ferrero et al. published their research in which they performedan analysis of electrical characterizations of twenty Ti/4H-SiC(titanium on silicon carbide) Schottkydiodes with the help of thermionic emission theory and evaluated the value of Richardson's constantto be 17±8 A/cm2.K2; which is very low as compared to the theoretical value of 146 A/cm2.K2.Wehave tried in this paper to evaluate the Richardson's constant's value by nearly same experimental tech-niques followed by S. Ferrero et al. and additionally, have applied Tung's theoretical approach whichdeals with the incorrect value of A* in the perspective of Schottky barrier inhomogeneities caused bythe presence of nanometer size low barrier patches present in the uniform high barrier of the Schottkydiode.We have fabricated two Ti/4H-SiC (titanium on silicon carbide) Schottky diodes with differentareas and oneMo/4H-SiC (molybdenumon silicon carbide) Schottky diode. In this paper we have pre-sented a comparative analysis of forward current-voltage characteristics of all three Schottky diodes.In all three cases we were successful in the evaluation of nearly correct value of Richardson's constant.This work emphasizes the effects of differentmetal-SiC combinations and laboratory environments onthe evaluation of Richardson's constant and the effective area involved in the current transport. As pre-dicted by Tung's model the effective area is seen to be substantially different from the geometric areaof the Schottky diode. Evaluated values of A*, with an error of ±2, come out to be 145.39, 148.33and 148.33 A/cm2.K2for Ti/4H-SiC(large area), Mo/4H-SiC and Ti/4H-SiC(small area) Schottkydiodes, respectively.
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41

Ben Nasrallah, T., D. Mahboub, M. Jemai, and S. Belgacem. "Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes." Engineering, Technology & Applied Science Research 9, no. 5 (October 9, 2019): 4695–701. http://dx.doi.org/10.48084/etasr.3072.

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In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial resistance, the parallel conductance, the Schottky barrier height (SBH), and the ideality factor of the SD were obtained by fitting the J-V-T data using the Lambert function. Data analysis was conducted with the use of MATLAB. Results showed that n is greater than 1, which could be explained by the existence of inhomogeneities due to the grain boundaries in CuInS2. Through this analysis, one can see a good agreement between experimental and modeled data. The study has shown that the main contribution in the current conduction in such heterostructures is the thermionic emission (TE) supported by the recombination of the carriers. The last phenomenon appears mainly in the grain boundaries, which contain both intrinsic and extrinsic defects (secondary phases, segregated oxygen). An investigation of the J-V-T characteristics according to TE theory has demonstrated that the current density and the SBH increase while serial resistance, parallel conductance decrease with an increase in temperature. After an SBH inhomogeneity correction, the modified Richardson constant and the mean barrier height were found to be 120AK-2cm-2 and 1.29eV respectively. This kind of behavior has been observed in many metal-semiconductor contacts.
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42

Luo, M. Y., G. Bosman, A. Van Der Ziel, and L. L. Hench. "Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode." IEEE Transactions on Electron Devices 35, no. 8 (1988): 1351–56. http://dx.doi.org/10.1109/16.2558.

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43

Jung, Sung Min, Kyoung Kook Kim, Sung Nam Lee, and Hyun Soo Kim. "Electrical Characteristics of Pt Schottky Contact to Semipolar (11-22) n-GaN Depending on Si Doping Concentration." Applied Mechanics and Materials 404 (September 2013): 146–51. http://dx.doi.org/10.4028/www.scientific.net/amm.404.146.

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Electrical characteristics of Pt Schottky contact formed on semipolar (11-22) n-type GaN planes with different Si doping concentration were investigated. Large Si doping to semipolar (11-22) n-GaN led to improved electrical and structural properties, e.g., the Hall mobility (μ) was increased by 35 % and the full width at half maximum (FWHM) of X-ray rocking curves with X-ray incident beam direction of [-1-12 was decreased by 34 %. Thermionic field emission (TFE) theory applied to the forward current-voltage (I-V) curves of fabricated Pt Schottky diodes yielded the Schottky barrier height (ΦB) of 1.64 and 1.84 eV, the tunneling parameter (E00) of 44 and 65 meV, and the ideality factor (n) of 1.83 and 2.57 for the lowly doped and highly doped samples, respectively, indicating that the Si doping affected the carrier transport properties substantially associated with the change of surface states density.
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44

Latreche, A. "Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes." Semiconductor Physics, Quantum Electronics & Optoelectronics 22, no. 1 (March 30, 2019): 19–25. http://dx.doi.org/10.15407/spqeo22.01.019.

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45

Ciechonski, R. R., Samuele Porro, Mikael Syväjärvi, and Rositza Yakimova. "Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC." Materials Science Forum 483-485 (May 2005): 425–28. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.425.

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Specific on-resistance Ron estimated from current density-voltage characteristics of Schottky diodes on thick layers exhibits variations from tens of mW.cm2 to tens of W.cm2 for different doping levels. In order to understand the occurrence of high on-state resistance, Schottky barrier heights were first estimated for both forward and reverse bias with the application of thermionic emission theory and were in agreement with a literature reported values. Decrease in mobility with the temperature was observed and its dependencies of T–1.3 and T–2.0 for moderately doped and low doped samples respectively were estimated. From deep level measurements by Minority Carrier Transient Spectroscopy, an influence of shallow boron related levels and D-center on dependence of on-state resistance was observed, being more pronounced in low doped samples. Similar tendency was observed in depth profiling of Ron. This suggests a major role of boron in a compensation mechanism thus resulting in high Ron.
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46

Abay, Bahattin. "Laterally Inhomogeneous Barrier Height Analysis for Thermally Annealed CuNiTi/p-InP Contacts." Materials Science Forum 890 (March 2017): 127–30. http://dx.doi.org/10.4028/www.scientific.net/msf.890.127.

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The fabrication of thermally stable Schottky contacts with high barrier height (BH) to InP is one of the main challenges for InP-based device technology. CuNiTi/p-InP Schottky barrier diodes (SBDs) (25 dots) on p-InP substrate were fabricated by conventional vacuum deposition. Characteristic parameters such as BH and ideality factor (n) of as-deposited and annealed CuNiTi/p-InP diodes have been computed by thermionic emission (TE) theory from the forward-bias current-voltage (I-V) data, at room temperature and in dark. The value of BH and n varies from 0.452 to 0.631 eV and 1.172 to 2.815, respectively for the as-deposited SBDs. The results showed that characteristic parameters of CuNiTi/p-InP structures differ from one device to another even though they were identically prepared. Hence, to overcome these problems post thermal annealing was implemented since the annealing process can improve the interfacial quality as well as can induce a recrystallization of the gate metals. BH values for CuNiTi/p-InP SBDs have also varied from 0.765 to 0.804 eV, and ideality factor n from 1.161 to 1.253 after annealing at 500 °C for two minutes. As a result of the thermal annealing, it has been seen that the BH values of the annealed SBDs are larger than those of the as-deposited ones. A statistical study on the diode parameters has been made. The experimental BH and ideality factor distributions were fitted by a Gaussian distribution (GD) function. Lateral homogeneous BH (φhom.) values of 0.628 eV and 0.886 eV for the as-deposited and annealed CuNiTi/p-InP SBDs has been obtained from the φeff.-n plots by using Tung’s lateral inhomogeneity approach. An increment of 0.258 eV in the BH for the 500 °C annealing devices with respect to that of the as-deposited ones has been ascribed to the formation of the positively charged interface defects that electrically actives in the metal-semiconductor (MS) interface.
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47

Dökme, İlbilge. "The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height." Microelectronics Reliability 51, no. 2 (February 2011): 360–64. http://dx.doi.org/10.1016/j.microrel.2010.08.017.

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48

Chatterjee, Abhijit, Shashidhara Acharya, and S. M. Shivaprasad. "Morphology-Related Functionality in Nanoarchitectured GaN." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 179–206. http://dx.doi.org/10.1146/annurev-matsci-081919-014810.

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Integrating silicon and III-nitride technologies for high-speed and large bandwidth communication demands optically interconnected active components that detect, process, and emit photons and electrons. It is imperative that multifunctional materials can enhance the performance and simplify fabrication of such devices. Spontaneously grown GaN in the nanowall network (NwN) architecture simultaneously displays unprecedented optical and electrical properties. A two-order increase in band-edge emission makes it suitable for high-brightness light-emitting diodes and laser applications. Decorating this NwN with silver nanoparticles further enhances emission through plasmonic interactions and renders it an excellent surface-enhanced Raman spectroscopy substrate for biomolecular detection. The observation of very high electron mobility (approximately 104 cm2/Vs) and large phase-coherence length (60 μm) is a consequence of two-dimensional (2D) electron gas formation applicable for high electron mobility transistors. Detecting ballistic transport in the nanowalls confirms proximity-induced superconductivity (<5 K and 8 T). Charge separation properties render it a device material for UV photodetectors, photoanodes for water splitting, and thermionic field emitters.
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49

Kumar, Santosh, Xiang Zhang, Vinay Kumar Mariswamy, Varra Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S. V. S. Nageswara Rao, Jue Tang, Seeram Ramakrishnna, and Krishnaveni Sannathammegowda. "Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes." Materials 13, no. 6 (March 13, 2020): 1299. http://dx.doi.org/10.3390/ma13061299.

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The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 × 1013 to 1 × 1015 ions cm−2. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 1013 ions cm−2 and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion.
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50

Asghar, M., Khalid Mahmood, Adnan Ali, and M. A. Hasan. "Comparative Study of Temperature Dependent Barrier Heights of Pd/ZnO Schottky Diodes Grown along Zn- and O-Faces." Key Engineering Materials 510-511 (May 2012): 265–70. http://dx.doi.org/10.4028/www.scientific.net/kem.510-511.265.

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In this study, the effect of polar face on Schottky barrier diodes has been investigated. Two samples of ZnO were grown hydrothermally under similar growth conditions. The Palladium (Pd) metal contacts of area 0.78 mm2were fabricated on both faces and were studied comprehensively using DLS-83 Deep Level Spectrometer over temperature range of 160K330K. The current-voltage (IV) measurements revealed that the ideality factor n and barrier height ϕBwere strongly temperature dependent for both faces (Zn and O-face) of ZnO, indicating that the thermionic emission is not the dominant process, which showed the inhomogenity in the barrier heights of grown samples. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear ϕapverses n plot to n = 1 has given a homogeneous barrier height of approximately 0.88±0.01 eV and 0.76±0.01 eV for Zn and O-faces respectively. ϕapversus 1/T plot was drawn to obtain the values of mean barrier height for Zn and O-face (0.88±0.01 eV, 0.76±0.01 eV) and standard deviation (δs) (0.015±0.001 V, 0.014±0.001 V) at zero bais respectively. The value of δsfor the Zn-face is larger than O-face, showing that inhomogenity in the barrier heights is more in the sample grown along Zn-face as compared to the sample grown along O-face.
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