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Dissertations / Theses on the topic 'ThicK substrate'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Stephens, D. "Millimeter-wave substrate integrated waveguides and components in thick-film technology." Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/958/.

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2

Schulz, Noel Nunnally. "The Role of residual stresses in ceramic substrate materials for hybrid thick film applications." Thesis, This resource online, 1990. http://scholar.lib.vt.edu/theses/available/etd-05092009-040342/.

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3

Tick, T. (Timo). "Fabrication of advanced LTCC structures for microwave devices." Doctoral thesis, University of Oulu, 2009. http://urn.fi/urn:isbn:9789514292507.

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Abstract The main objective of this thesis was to research the integration of novel materials and fabrication processes into Low Temperature Co-fired Ceramic (LTCC) technology; enabling fabrication of Radio Frequency (RF) and microwave components with advanced performance. The research focuses on two specific integration cases, which divide the thesis into two sections: the integration of tunable dielectric structures and the integration of air filled waveguides. The first section of the thesis describes the development and characterization of low sintering temperature Barium Strontium Titan

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4

Lacika, Marek. "Tlustovrstvá topná deska s regulací výkonu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2020. http://www.nusl.cz/ntk/nusl-413223.

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This thesis deals with issues of used hot plates and thick-film technology. The theoretical part of diploma thesis contains a theoretical analysis and description of corresponding technology and usage of materials. The practical part of the thesis focuses on the design of the resulting device, which forms design of the test and optimized hot element, the initial design of the device and the design of models for temperature simulations. Then follows description of the practical realization of the motifs and testing of the created thick-film structure on a ceramic substrate. In the last part are

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5

Pettersson, Elin. "Vilken preferens har tjockskalig målarmussla (Unio crassus) för bottensubstrat och vattenhastighet i Storån, Östergötland?" Thesis, Linköpings universitet, Biologi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-78999.

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The thick shelled river mussel (Unio crassus) has a fragmented distribution in southern Sweden. It is a threatened and protected species. In both the Swedish red list and the IUCN Red List of Threatened Species Unio crassus is classified as Endangered (EN). Causes for this classification are for instance differentiated bottom substrate and deterioration in water quality. In this study, habitat preferences of Unio crassus were investigated to assist in future restoration work. The environmental parameters that were used to characterize the habitat in sites with or without Unio crassus were wate

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6

Norton, Murray Grant. "Characterisation and thick film metallisation of aluminium nitride substrates." Thesis, Imperial College London, 1989. http://hdl.handle.net/10044/1/47594.

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7

Cole, Robert Lawrence. "Precision Excimer Laser Lithography for Cylindrical Substrates With Thick Photoresists." University of Cincinnati / OhioLINK, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1093033859.

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8

Barlow, Fred D. III. "Thick film Y₁Ba₂Cu₃Ox on buffered ceramic substrates." Thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/46096.

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High Temperature Superconductors (HTS) materials are ideal for many electrical applications. These applications include high speed interconnects, microwave structures and transmission lines, as well as electronic devices that utilize the unique electrical and magnetic properties of these materials. To date, the use of high temperature superconductors has been limited to a narrow range of substrate materials, due to the reactive nature of these superconductors. Chemical reactions between the substrate and the superconductor cause decomposition of the superconductor into an insulator. The

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9

Barlow, Fred D. "Thick film Y₁Ba₂Cu₃Ox on buffered ceramic substrates /." This resource online, 1994. http://scholar.lib.vt.edu/theses/available/etd-12042009-020146/.

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10

Cole, Robert C. "Precision excimer laser lithography for cylincrical substrates with thick photoresists." Cincinnati, Ohio : University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1093033859.

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11

Lim, Teck-Guan. "Millimetre-wave tapered slot antennas on thick and high permittivity substrates." Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/844576/.

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A simple and novel solution is proposed to overcome the main beam splitting of the tapered slot antenna (TSA) fabricated on a thick substrate with high dielectric constant. It utilised arrays of metal strip gratings to reduce the undesirable surface waves. Measured result of a 10lambda0 long 35GHz linear taper slot antenna (LTSA), shows a dramatic improvement in the radiation pattern and a measured front-to-back ratio of 20dB for both the planes. Further analysis shows that the metal strip gratings help to improve the directivity and return loss of shorter LTSAs. Comparing with a basic LTSA wi

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12

Hickey, Michael A. "Reduced surface-wave twin arc-slot antennas on electrically thick dielectric substrates." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ58794.pdf.

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13

Wen, Xuejun. "DIRECT DEPOSITION OF C-AXIS TEXTURED HIGH-TC YBCO SUPERCONDUCTING THICK FILMS UNORIENTED METALLIC SUBSTRATES." University of Cincinnati / OhioLINK, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ucin971281869.

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14

Hoagland, Richard W. "Switchmode Power Supply Miniaturization with Emphasis on Integrated Passive Components on Prefired High Performance Ceramic Substrates." Diss., Virginia Tech, 1999. http://hdl.handle.net/10919/28732.

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This Dissertation is a study of Switched Mode Power Supply (SMPS) miniaturization and how to effectively use the available technologies to achieve the ultimate goal of a reduced size without loss of functionality while maintaining a cost effective design. This research investigates several methods used to obtain low loss, highly compact power supplies. Within these constraints, the Dissertation investigates the issues of design, materials, and cost in order to design and achieve these miniaturized power supplies. This research addresses high performance ceramic, passive component integrat

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15

Farzanehfard, Hosein. "Wideband characterization of aluminum nitride substrates and high power-high frequency thick film applications." Diss., Virginia Tech, 1992. http://hdl.handle.net/10919/39788.

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Ceramic substrates play an important role in thick film hybrid microelectronic circuits. Existing substrates such as alumina and beryllia do not meet satisfactorily the desired requirements. The newly developed aluminum nitride (<i>AIN</i>) substrate shows a great deal of promise and potentially embraces the best qualities of alumina and beryllia. The objective of this dissertation is to study the electrical properties, thick film interaction, and environmental effects on <i>AIN</i> substrates, and also to examine the performance of this material for high power - high frequency hybrid thick f

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16

Simcoe, Michael K. "The design of high-gain slot arrays on electrically thick substrates for millimeter-wave applications." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ63027.pdf.

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17

Moussa, Mohamed A. A. "Fabrication and characterisation of Nd-123 high-temperature superconducting thick films on yttria stabilized zirconia substrates." Thesis, University of Birmingham, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288886.

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18

Stryckmans, Olivier. "Conception of ceramic film deposition processes on alumina and steel substrates: LaAIO3, Y3Al5O12, MgO and ZrO2 diffusion barriers, YBaCuO superconductor thick film." Doctoral thesis, Universite Libre de Bruxelles, 1996. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/212406.

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19

Tsai, Chir-Jang, and 蔡奇璋. "Adhesion Behaviors of Thick Film Metallized AlN Substrate." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/28391973378611150919.

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碩士<br>義守大學<br>材料科學與工程學系<br>88<br>The interfacial pore distribution, microstructure, and adhesive properties of an aluminum nitride (AlN) substrate screen-printed with resistor pastes have been investigated over a wide temperature range (600 ~ 850 oC). Some of the resistors have been doped with varying concentrations (5 ~ 20%) of submicronmeter Al2O3 particles. Some of the AlN substrates have also been thermally pre-oxidized at elevated temperatures before the printing process. Sintering temperature for fully densification of the resistor film has been found to increase with the Al2

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20

Huang, Yu-Kai, and 黃譽凱. "Silver Thick Film Conductors on Soda-Lime Glass Substrate." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/65816188043430819179.

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21

Chen, Hong-Wen, and 陳鴻文. "Laser fracture milling and cutting techniques for thick ceramic substrate." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/03165303817848860415.

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碩士<br>華梵大學<br>機電工程研究所<br>89<br>A new laser machining technique for ceramic material based on the concept of fracture machining is proposed in this paper. The material removal is due to the crack propagation and the linkage of defects. The original concept of fracture machining comes from the laser cutting technique with controlled fracture for the brittle thin plate. The conventional laser machining requires high laser power and will result in many cracks during the grooving process. But the required laser power of the required laser power of the present method is much smaller than the traditi

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22

Chou, Yu-Chieh, and 周煜傑. "PH Biosensor with Arrayed Design by Thick-Film Printing Ceramic Substrate." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/fj9q46.

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23

Lee, Kun Yu, and 李昆育. "Prepared PNN-PZT thick film on silicon substrate by laser lift-off process." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/88035857568209360881.

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24

Lin, Ming-Yen, and 林明彥. "Development of Amperometric Homocysteine Biosensor with Arrayed Design by Thick-Film Printing Ceramic Substrate." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/4x674t.

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25

Wu, Ji-Pu, and 吳霽圃. "Thick GaN layers prepared on AlN/Patterned Sapphire Substrate by Hydride Vapor Phase epitaxy." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/67005552067824899359.

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碩士<br>國立交通大學<br>照明與能源光電研究所<br>102<br>In this thesis, we used a horizontal home-made hydride vapor phase epitaxy (HVPE) to grow thick GaN layers on a sputtered AlN/patterned sapphire substrate. We initially optimized surface morphology and crystal quality by changing the V-III ratio to acquire a smooth surface. Next, we attempted to induce the sputtered AlN into becoming a buffer layer to realize one-step growth in HVPE and then applied this technique to the patterned sapphire substrate. Results showed that the GaN films grown on the patterned sapphire substrate had a rough surface. Thus, we in

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26

Hsiao, Hui-En, and 蕭暉恩. "Development of Amperometric Glucose Biosensor with Arrayed Design by Thick-Film Printing Ceramic Substrate." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/48508277909120169200.

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27

Huang, Chun-Chi, and 黃君琦. "Study on the thick film dielectric materials on the low temperature co-fired ceramic substrate." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/76496344913215698350.

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碩士<br>義守大學<br>材料科學與工程學系<br>90<br>Abstract In order to develop the thick film dielectric materials on the low temperature co-fired ceramic substrate, the effects of BaO-B2O3-SiO2 (BBS), PbO-B2O3-SiO2 (PBS), ZnO-B2O3-SiO2-1 (ZBS1)and ZnO-B2O3-SiO2-2 (ZBS2) addition on the sintering behavior and the dielectric properties of BaTiO3 (BT) were investigated. And finding the best composition and sintering condition of the BT to make dielectric paste fabricates the thick film surface capacitor on the low temperature co-fired ceramic substrate. Four glasses, BBS、PBS、ZBS1 and ZBS2,

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28

Sun, Chen-Yuan, and 孫晟淵. "The Study of GaN Thick Film Grown on Sapphire Substrate with PVD AlN Buffer Layer by HVPE." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/05479728275633300637.

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碩士<br>國立交通大學<br>電子物理系所<br>104<br>In this paper, the fabrication of GaN thick film grown by HVPE with physical vapor deposition (PVD) formed aluminum nitride (AlN) buffer layer is presented. The thickness of PVD-AlN layer was 25~40 nm. The GaN thick films were grown by three-steps method using HVPE system. After laser lift-off (LLO), the thickness of free-standing GaN using PVD-AlN as buffer layer was 310µm. The diameter of sample was 1.5 inch with a smooth surface. The full width at half maximum (FWHM) of the XRD rocking curve of the (002) symmetric plane of the free-standing GaN grown on GaN

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29

吳俊宏. "The effect of additives on the microstructures and electrical properties of thick-film resistors on aluminum nitride substrate." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/18228936622793920615.

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碩士<br>義守大學<br>電子工程學系<br>90<br>Most of the commercial thick film pastes are formulated for alumina(Al2O3) substrate. When the commercial thick film pastes were applied on aluminum nitride (AlN) substrate, because of the reaction between AlN and the glass of the commercial thick film pastes, nitrogen was released and blisters were formed in the resistor layer or at the interface between the resistor layer and AlN substrate. They were incompatible with AlN. The blistering resulted in instability of the resistor’s characteristics. AlN is an appropriate substrate material for electronic parts becau

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30

Huang, Kun-Sung, and 黃坤松. "Growth of thick GaN film with low dislocation density on Si(111) substrate by inserting LT-AlGaN interlayer and HP-GaN nucleation layer." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/eg83gx.

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碩士<br>國立交通大學<br>光電系統研究所<br>105<br>GaN shows many superior physical properties such as wide bandgap, high carrier velocity, high breakdown field and good thermal conductivity. Therefore, normal AlGaN/GaN HEMTs show characteristics of high breakdown voltage and high current. Furthermore, normal AlGaN/GaN HEMTs can be grown on large-sized Si substrate, so the fabrication cost can be reduced significantly. Accordingly, GaN material is a candidate for replacing Si-based devices to become next-generation high-power electronics. However, it is necessary to have high breakdown voltage for high power d

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31

Kao, Sheng Jou, and 高勝洲. "A Study on the Fabrication of Bi-(Pb)-Sr-Ca-Cu-O Thick Films by using SrCaCu2O4、SrCaCu4O6 and Ag as a Substrate." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/85052452075631729779.

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碩士<br>中原大學<br>應用物理學系<br>82<br>The Bi-Sr-Ca-Cu-O superconducting thick films were grown by printing appropriate mixtures of Bi2O3+PbO and the BSCCO films with (Bi2O3+PbO)-doped on substrates of SrCaCu2O4 , SrCaCu4O6 and Ag separately, and then followed by a diffusion process at 700-900℃ according to the DTA data. The results from XRD reveal that the BSCCO films by using SrCaCu4O6 substrate are (2201) accompany with a little (2212) phase and for those by using SrCaCu2O4 substrate are (2212)

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32

Chang, Hung-Ming, and 張鴻銘. "Study of Thick-Film Capacitors on Flexible Substrates." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/91545258032881052599.

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碩士<br>義守大學<br>電子工程學系碩士班<br>98<br>The capacitors were fabricated on flexible substrates by using spin coating process various ratio of high dielectric constant ceramic materials were mixed with low dielectric constant resins by a triple roller. The effect of high permittivity materials on the dielectric properties were investigated. In addition, conductive materials were added in to the matrix to increase dielectric constant of composites. Dielectric properties of the composite depend on the amount of high permittivity ceramics and higher amount of ceramics result in higher dielectric constant.

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33

TSAI, SHENG DA, and 蔡昇達. "CO2 laser annealing of PZT thick films on different substrates." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/7qg4c8.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>95<br>In this study, lead zirconate titanate (PZT) ferroelectric thick films are prepared by a modified sol-gel method. The microstructure of the thick film is transformed from the amorphous phase to the perovskite structure by using CO2 laser low temperature annealing. PZT powder calcined at four different temperatures (500℃~650℃), and the average grain size about 150~350nm, and to spin-coat the precursor on Pt/Ti/SiO2/Si and SUS 430 substrate. The sandwich structures of PZT(5μm~15μm)/(Pt/Si) annealed by applying CO2 laser annealing technique. The remanent polar

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34

Peng, Chuan-Yun, and 彭川耘. "High Quality Thick GaN Films Grown on GaN Substrates by HVPE." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/74368232788885992694.

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碩士<br>國立交通大學<br>電子物理系所<br>99<br>In this work, the major purpose is growing high quality freestanding GaN substrate. In order to grow this substrate, we have to grow thicker GaN film to reduce its dislocation density. Because growing GaN thick films on sapphire substrates are crack easily by mismatch of thermal expansion. We use freestanding GaN substrate which is separate after laser lift off (LLO), and homoepitaxy to regrowth GaN thick films. In this experiment, we mainly to solve the surface oxide layer, the surface pits, and the bowing of thick films. We use wet etch to solve the problem of

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35

Lin, Jia-Fu, and 林佳福. "Synthesis of bioactive TiO2 thick films on titanium substrates by plasma electrolytic oxidation." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/18999187124359184501.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>99<br>Titanium, a kind of light metal material, is widely applicated in biomedical field, mainly because of good bio-compatibility and chemical stability. Generally various applications of titanium depend on the characteristic such as surface property, oxide structure, thickness of oxide layer and chemical composition. The oxide layer of the material surface or coated hydroxyapatite of titanium often was modifies for the purpose of usage in implantation. By this kind modification, not only the bonding process could be strength between the titanium materials and al

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36

Dunn, Kathleen A. "Microstructure of GaN thick films grown by CVD on conventional and LEO substrates." 2001. http://www.library.wisc.edu/databases/connect/dissertations.html.

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37

Yih-Ming, Liu, and 劉益銘. "Interfacial Reactions between In-Based Lead-Free Solders and Au Thick Films or Ag Substrates." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/03798043867587865934.

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博士<br>國立臺灣大學<br>材料科學與工程學研究所<br>88<br>Soldering has been widely used on electronics assemblies and PbSn alloys are very popular solder alloys due to their superior properties as good soldering properties, fatigue resistance, adequate thermal and mechanical properties and low cost. However, growing concerns about environmental pollution and lead toxicity have increased the regulations and legislation on lead usage. The development of lead-free solders has been prompted and intensified for the past years. In soldering, the reaction between solder and substrate will result in intermetallic comp

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38

Chiang, Chien-Te, and 江健德. "Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/y52w53.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>102<br>In this thesis, we use hydride vapor phase epitaxy (HVPE) system to grow thick gallium nitride (GaN) on sapphire (c-Al2O3) and Pattern sapphire substrate (PSS). The reaction of our experiment is using GaCl which react from HCl and Ga metal and NH3 as reactor under H2 and N2 atmosphere to obtain GaN. By control of reaction pressure, substrate location, carrier gas and V/III ratio of NH3/HCl to obtain high quality thick GaN film.The experiment can be divided into two parts: First part, we grew high quality thick GaN film on sapphire; Second part, grew high

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