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Journal articles on the topic 'ThicK substrate'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Uršič, Hana, Janez Holc, Marina Santo Zarnik, Marko Hrovat, and Marija Kosec. "Large Strain Actuation of 0.65PMN–0.35PT/Pt Thick-Film Bimorphs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (2012): 000597–602. http://dx.doi.org/10.4071/cicmt-2012-tha23.

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The effect of clamping a piezoelectric layer to a relatively stiff substrate results in smaller displacements in comparison to substrate-free structures. To ensure a sufficient amount of the bending of actuators, it is important to reduce the thickness of the substrate. For this reason an approach to preparing “substrate-free”, large-displacement actuators using the screen-printing method was developed. The “substrate-free” 0.65PMN–0.35PT/Pt actuators were prepared by screen-printing the 0.65PMN–0.35PT and Pt pastes on alumina substrates. After the screen printing and the subsequent firing the

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2

Kokkomäki, T., A. Uusimäki, R. Rautioaho, J. Levoska, T. Murtoniemi, and S. Leppävuori. "Screen-Printed Superconducting Y-Ba-Cu-O Thick Films on Various Substrates." Active and Passive Electronic Components 13, no. 3 (1989): 197–209. http://dx.doi.org/10.1155/1989/82586.

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Superconducting thick films of the Y-Ba-Cu-O system prepared by screen-printing and sintering on different substrates were investigated to study the effect of the substrate material on the superconducting properties of the films. These properties were determined by carrying out structural studies using SEM, EPMA and XRD and by determining the electrical resistivity. The effect of diffusion barrier layers between the film and the substrate on the superconducting properties of the film was also studied. The onset temperature of superconductivity inYBa2Cu3O7−δ(123) superconducting thick film was

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3

Andreev V.G., Vdovin V. A., Glazunov P. S., Pyataikin I. I, and Pinaev Yu. V. "Effect of Thickness of the Dielectric Substrate on Absorbing and Antireflective Properties of Ultrathin Copper Films." Optics and Spectroscopy 130, no. 9 (2022): 1134. http://dx.doi.org/10.21883/eos.2022.09.54834.3539-22.

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The dependence of optical coefficients of ultrathin copper films 2-30 nm thick on the substrate thickness has been studied. Films were fabricated on quartz substrates 4 mm thick, and the thickness of the substrates (6 and 8 mm) was varied by tightly pressing clean substrates with thicknesses of 2 and 4 mm to a 4 mm substrate with a film. The measurements were carried out in a waveguide in the frequency range 8.5-12.5 GHz in the TE10 mode for two film orientations with respect to direction of the incident wave. The dependences of the optical coefficients measured when the wave was incident from

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4

Андреев, В. Г., В. А. Вдовин, П. С. Глазунов, И. И. Пятайкин та Ю. В. Пинаев. "Влияние толщины диэлектрической подложки на поглощающие и просветляющие свойства ультратонких пленок меди". Оптика и спектроскопия 130, № 9 (2022): 1410. http://dx.doi.org/10.21883/os.2022.09.53304.3539-22.

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The dependence of optical coefficients of ultrathin copper films 2 – 30 nm thick on the substrate thickness has been studied. Films were fabricated on quartz substrates 4 mm thick, and the thickness of the substrates (6 and 8 mm) was varied by tightly pressing clean substrates with thicknesses of 2 and 4 mm to a 4 mm substrate with a film. The measurements were carried out in a waveguide in the frequency range 8.5 – 12.5 GHz on the TE10 mode for two film orientations with respect to direction of the incident wave. The dependences of the optical coefficients measured when the wave was incident

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5

Kumar, Arun, and Anandh Subramaniam. "Finite Substrate Effects on Critical Thickness in Epitaxial Systems." Advanced Materials Research 585 (November 2012): 39–43. http://dx.doi.org/10.4028/www.scientific.net/amr.585.39.

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During the growth of an epitaxial overlayer on a thick substrate (GeSi on Si), an interfacial misfit dislocation becomes energetically favourable on exceeding the critical thickness. In substrates of finite thickness, the value of critical thickness is altered with respect to thick substrates. Thin substrates can bend and partially relax the coherency stresses, thus contributing to the altered value of the critical thickness. The current work aims at simulating the stress state of a growing finite epitaxial overlayer on a substrate of finite thickness, using finite element method. The numerica

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6

Li, Xin Mei, Xiao Feng Dong, Tu Erxun Si Dike, Kai Jie Li, and Dong Yu. "Characterization of Pure Titanium and Ti6Al4V Alloy Modified by Plasma Electrolytic Carbonitriding Process." Key Engineering Materials 522 (August 2012): 152–55. http://dx.doi.org/10.4028/www.scientific.net/kem.522.152.

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Porous nanocrystalline thick Ti (CxN1-x) films which bond firmly to the substrate are obtained on commercially pure titanium and Ti6Al4V alloy by plasma electrolytic carbonitriding (PECN) treatment. The microstructures and compositions of the modified layer on different substrates were compared. The results showed that the modified layer is composed of the outer Ti (CxN1-x) film and the diffusion layer. When discharge-treated for 150 min, the thickness of the Ti (CxN1-x) film is ~15μm, irrespective of the different substrate. The TiH2 riched diffusion layer which is 40-45μm thick is located be

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7

Maeder, Thomas, Caroline Jacq, Stefane Caseiro, and Peter Ryser. "Fabrication, response and stability of miniature piezoresistive force-sensing thick-film cantilevers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (2016): 000024–31. http://dx.doi.org/10.4071/2016cicmt-tp1a3.

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Abstract Miniature ceramic cantilevers have been successfully applied to the fabrication of simple and low-cost piezoresistive thick-film force-sensing cells, using different thick-film and LTCC (low-temperature co-fired ceramic) substrates. The availability of thin substrates for some materials allows much improved sensitivity compared to classical thick-film technology, with LTCC also featuring rather low substrate elastic modulus and fine structurability. However, practical applicability may be hindered by processing difficulties, such as printing and handling very thin fired substrates, or

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8

Matsumae, Takashi, Hitoshi Umezawa, Yuichi Kurashima, and Hideki Takagi. "(Invited, Digital Presentation) Low-Temperature Direct Bonding of Wide-Bandgap Semiconductor Substrates." ECS Transactions 111, no. 2 (2023): 53–60. http://dx.doi.org/10.1149/11102.0053ecst.

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For the next-generation semiconductor devices, our research group has developed direct bonding techniques of wide-bandgap materials, including SiC, Ga2O3, and diamond. It is known that the semiconductor substrates activated by oxygen plasma can form atomic bonds at low temperatures. In this case, a thick oxide layer, which may become a thermal and electrical barrier, is formed at the bonding interface. Meanwhile, our research group demonstrated that the OH-terminated Ga2O3 and diamond substrates were directly bonded without an oxide intermediate layer. In addition, the SiC substrate dipped int

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Immovilli, Simona, Bruno Morten, Maria Prudenziati, Alessandro Gualtieri, and Massimo Bersani. "Interactions between bismuth oxide and ceramic substrates for thick film technology." Journal of Materials Research 13, no. 7 (1998): 1865–74. http://dx.doi.org/10.1557/jmr.1998.0265.

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We investigated the interactions between screen printed and fired layers of Bi2O3 and ceramic substrates of alumina and beryllia. It was found that the reaction products are invariably crystalline in nature. Several transitions of Bi2O3 in its polymorphic phases were found to occur on BeO substrates, while newly formed compounds have been observed to grow on alumina substrates, i.e., Al4Bi2O9 on 99.9% Al2O3 and Bi12SiO20 on 96% Al2O3. Bismuth deeply penetrates in the ceramic interstices in all the cases. Until Bi2O3 is not completely reacted, this penetration is diffusion limited (penetration

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10

Syväjärvi, Mikael, Rositza Yakimova, Gholam Reza Yazdi, Arul Arjunan, Eugene Toupitsyn, and Tangali S. Sudarshan. "Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC." Materials Science Forum 527-529 (October 2006): 227–30. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.227.

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Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180 #m/h. Even in such thick layers the surfaces are smooth and only disturbed by polishing scratches. The surfaces contain steps which facilitate reproduction of the substrate polytype.

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11

MADHAVRAO, L. RAO, and RAJ RAJAGOPALAN. "THICK FILMS OF YBaCuO FROM PRECALCINED POWDERS." International Journal of Modern Physics B 03, no. 05 (1989): 751–61. http://dx.doi.org/10.1142/s0217979289000567.

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Preparation and some of the chemical and microstructural aspects of thick films of the YBa 2 Cu 3 O 7−x superconductors (herein designated as YBaCuO) using precalcined YBaCuO powders and a colloidal method are described. Films on alumina substrates were made from calcined YBaCuO powders dispersed in hexane using a commerical dispersant which acts as a steric stabilizer and binder. The additive decomposes without residues at relatively low temperatures, and structurally stable and uniform films are obtained for proper dosage of the dispersant. Scanning electron microscopy has been used to exami

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12

Batson, W., L. J. Cummings, D. Shirokoff, and L. Kondic. "Oscillatory thermocapillary instability of a film heated by a thick substrate." Journal of Fluid Mechanics 872 (June 14, 2019): 928–62. http://dx.doi.org/10.1017/jfm.2019.417.

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In this work we consider a new class of oscillatory instabilities that pertain to thermocapillary destabilization of a liquid film heated by a solid substrate. We assume the substrate thickness and substrate–film thermal conductivity ratio are large so that the effect of substrate thermal diffusion is retained at leading order in the long-wave approximation. As a result, the system dynamics is described by a nonlinear partial differential equation for the film thickness that is non-locally coupled to the full substrate heat equation. Perturbing about a steady quiescent state, we find that its

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13

Ginley, D. S., M. A. Mitchell, J. F. Kwak, E. L. Venturini, R. J. Baughman, and W. Fu. "Freestanding thick films of YBa2Cu3O6.9 by screenprinting techniques." Journal of Materials Research 4, no. 3 (1989): 501–3. http://dx.doi.org/10.1557/jmr.1989.0501.

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Thick (20–300 μm) freestanding polycrystalline films of ceramic YBa2Cu3O6.9 have been obtained by resintering YBa2Cu3O6.9 powder in air after screen printing onto fused silica substrates. An interfacial reaction occurs between the powder and the silica substrate which efficiently detaches the resintered film upon cooling. The magnetization and transport properties of these films are comparable to those for high quality bulk ceramic samples.

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14

Bickmann, K., and J. Hauck. "Lattice distortion of thick epitaxial layers." Journal of Materials Research 11, no. 1 (1996): 50–54. http://dx.doi.org/10.1557/jmr.1996.0007.

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Precise x-ray diffraction measurements between room temperature and ∼400 °C (Bond method) exhibit some details in the variations of strain in ∼ 1 μm thick epitaxial layers of GaAs, InP, CdTe, EuS, or SrS on Si or GaAs substrates. The lattice parameters of the cubic layers, which are deposited at high temperatures, deviate from the lattice parameters, a0, of small unconstrained single crystals by Δa/a0 = ∈0 ≲ 10−3. The layers adhere to the substrates below Tc and adopt different strains, ∈‖ and ∈⊥, parallel and perpendicular to the substrate. Frequently the Tc and ∈0 values vary on annealing at

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15

Hsieh, Chi-Hsiang, Chiao-Yang Cheng, Yi-Kai Hsiao, et al. "Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers." Micromachines 16, no. 6 (2025): 710. https://doi.org/10.3390/mi16060710.

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The integration of thick homoepitaxial layers on silicon carbide (SiC) substrates is critical for enabling high-voltage power devices, yet it remains challenged by substrate surface quality and wafer geometry evolution. This study investigates the relationship between substrate preparation—particularly chemical mechanical planarization (CMP)—and the impact on wafer bow, total thickness variation (TTV), local thickness variation (LTV), and defect propagation during epitaxial growth. Seven 150 mm, 4° off-axis, prime-grade 4H-SiC substrates from a single ingot were processed under high-volume man

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16

Bersani, Massimo, Bruno Morten, Maria Prudenziati, and Alessandro Gualtieri. "Interactions between lead oxide and ceramic substrates for thick film technology." Journal of Materials Research 12, no. 2 (1997): 501–8. http://dx.doi.org/10.1557/jmr.1997.0072.

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This paper deals with the mechanisms and kinetics of interactions between screen printed and fired PbO layers and ceramic substrates: alumina and beryllia. The interaction with alumina occurs via two main processes: (i) a reaction between PbO and Al2O3 grains, which induces the formation of a crystalline phase, Pb2Al2O5; and (ii) an interdiffusion process involving Pb and the intergranular amorphous phase in the ceramic substrate. This latter process results in a compositional change of the intergranular phase at considerable depths inside the ceramic substrate, as well as in the formation of

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17

Li, Wenbing, Xin Tong, Zhuo Yang, Jiali Zhang, Bo Liu, and Chao Ping Chen. "Improved Sensitivity of Surface-Enhanced Raman Scattering with Gold Nanoparticles-Insulator-Metal Sandwich Layers on Flat Sapphire Substrate." Nanomaterials 11, no. 9 (2021): 2416. http://dx.doi.org/10.3390/nano11092416.

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Surface-enhanced Raman scattering (SERS) as a high sensitivity analytical method for molecule detection has attracted much attention in recent research. In this work, we demonstrated an improved SERS substrate, which has the gold nanoparticles randomly distributed on a SiO2 interception layer over a gold thin film layer on the flat sapphire substrate (AuNP/SiO2/Au/Sapphire), over the dispersed gold nanoparticles on a silicon substrate (AuNP/Si), for detection of R6G (1 × 10−6 M) in a Raman microscope. The fabrication of sandwich layers on top of the sapphire substrate involves evaporation of a

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18

Hlina, Jiri, Jan Reboun, Martin Janda, and Ales Hamacek. "Study of Internal Stress in Conductive and Dielectric Thick Films." Materials 15, no. 23 (2022): 8686. http://dx.doi.org/10.3390/ma15238686.

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This paper is focused on the study of internal stress in thick films used in hybrid microelectronics. Internal stress in thick films arises after firing and during cooling due to the differing coefficients of thermal expansion in fired film and ceramic substrates. Different thermal expansions cause deflection of the substrate and in extreme cases, the deflection can lead to damage of the substrate. Two silver pastes and two dielectric pastes, as well as their combinations, were used for the experiments, and the internal stress in the thick films was investigated using the cantilever method. Fu

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19

Riches, S. T., J. Whitmarsh, and D. Hamilton. "Silver Thick Film Based Insulated Metal Substrates for High Temperature Power Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000214–18. http://dx.doi.org/10.4071/hiten-session6-paper6_4.

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Thick film technology is normally applied to ceramic substrates such as Al2O3 and AlN, where conductor thicknesses for Au and Ag-Pd based thick film materials are &lt;20μm for signal processing. For power devices applications, thicker deposits are required to increase the current carrying capacity and thick print Cu and Ag materials have been developed for ceramic substrates. For power applications, this technology still requires attachment of the ceramic substrate to a heat sink, that may be made of aluminium or copper, which needs a thermal interface material. In printed circuit board te

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20

Hong, Sung-Jei, Yong-Hoon Kim, Seung-Jae Cha, and Yong-Sung Kim. "Enhancement of Characteristics of Transparent Conductive Electrode on Flexible Substrate by Combination of Solution-Based Oxide and Metallic Layers." Journal of Nanoscience and Nanotechnology 15, no. 10 (2015): 7997–8003. http://dx.doi.org/10.1166/jnn.2015.11271.

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This study investigates solution-processed transparent conductors with hybrid structure consisting of silver nanowires (AgNWs) and indium-tin-oxide nanoparticles (ITO-NPs) layers fabricated on polymeric flexible polyethylene terephthalate (PET) substrate. The transparent conductors had stacked structures of AgNWs/ITO-NPs on 125-μm-thick PET and ITO-NPs/AgNWs/ITO-NPs on 125-μm-thick PET, 188-μm-thick PET, or 700-μm-thick glass substrate, respectively. Successful integrations were possible on the substrates without any deformation or distortion. Sheet resistance of the triplelayered transparent

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21

Rendale, Maruti, Shrihar Mathad, and Vijaya Puri. "Resonance shifting by ferrite thick film superstrate." Serbian Journal of Electrical Engineering 15, no. 3 (2018): 275–84. http://dx.doi.org/10.2298/sjee1803275r.

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Fritless thick films of Ni-Co-Zn ferrites were fabricated by screen printing technique on alumina substrates. Structural analysis was undertaken using X-ray diffraction and Scanning electron microscopy techniques. A new approach for the determination of complex permittivity (?' and ?'' ) using microwave property perturbation is unveiled. Ag thick film microstrip ring resonator (MSRR) with and without the thick film substrate was used for the microwave transmission studies in the frequency region of 8-12 GHz. The microwave conductivity of the thick films lies in the range of 1.779 S/cm to 2.296

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22

Lau, J. H. "Thermoelastic Solutions for a Finite Substrate With an Electronic Device." Journal of Electronic Packaging 113, no. 1 (1991): 84–88. http://dx.doi.org/10.1115/1.2905372.

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Sneddon and Lockett obtained a fairly general solution to the steady-state thermoelastic problem for the thick plate (Sneddon and Lockett, 1960). In particular, they have obtained the exact solutions for axially symmetrical temperature distributions on the upper surface of the thick plate. In this note, their exact solution will be applied to an electronic problem, namely, a chip on a substrate with finite thickness. Emphasis is placed on the generation of dimensionless charts for the temperature, displacement, and stress distributions in the substrates. These charts are not only useful for de

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23

Kim, Young Ha, Tae Hyun Sung, Sang Chul Han, et al. "Effect of Substrate Texture on Superconducting Properties of YBCO Thick Films." Solid State Phenomena 124-126 (June 2007): 283–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.283.

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On nontextured substrates, YBCO superconducting thick films were fabricated using a simple screen-printing method, from Cu-free powders (Y2O3 and BaCO3). However, the films have poor superconducting properties, such as the critical current density, Jc value due to the random orientation of the films. In this work, we investigate the influence of substrate texture on superconducting properties of the film. The films screen-printed on the nontextured and textured Cu substrates were heat-treated by 2-step procedure in air (980 °C 10 sec + 930 °C 90 sec) followed by oxygen annealing at 450 °C for

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24

Yoshikawa, Masanobu, Hirohumi Seki, Keiko Inoue, Takuma Kobayashi, and Tsunenobu Kimoto. "Characterization of Inhomogeneity in SiO₂ Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy." Materials Science Forum 821-823 (June 2015): 460–63. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.460.

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We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with various thicknesses, grown on 4H-SiC substrates. The appearance of broad phonon modes at ~1150–1250 cm-1 in p-polarized light and their disappearance in s-polarized light confirmed that the phonon modes at ~1150–1250 cm-1originated from surface polaritons (SPPs). For the thin SiO2 film (8-nm thick), the peak frequency of the transverse optical (TO) phonon in the SiO2 film on the 4H-SiC substrate was observed at ~1080 cm-1and was higher than that in SiO2 films on the Si substrate (1074 cm-1).

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25

Phippard, C. "Large Substrate Thick Film Printing and Handling." Microelectronics International 2, no. 3 (1985): 9–11. http://dx.doi.org/10.1108/eb044179.

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26

Storbeck, I., H. Balke, and M. Wolf. "Substrate Bowing of Multilayer Thick Film Circuits." Microelectronics International 3, no. 3 (1986): 21–23. http://dx.doi.org/10.1108/eb044243.

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Pullman, R. T., P. F. Van Kuyk, and C. A. Jenness. "A Single Substrate Thick Film Temperature Datalogger." Microelectronics International 6, no. 3 (1989): 39–42. http://dx.doi.org/10.1108/eb044388.

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Pietsch, Ullrich, Tobias Panzner, Franz Pfeiffer, and Ian K. Robinson. "Substrate morphology repetition in “thick” polymer films." Physica B: Condensed Matter 357, no. 1-2 (2005): 136–40. http://dx.doi.org/10.1016/j.physb.2004.11.042.

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29

Wang, Jiayu, Hongyu Chen, Yizhen Bai, Xianyi Lu, and Zengsun Jin. "Pattern metallization on diamond thick film substrate." Diamond and Related Materials 9, no. 9-10 (2000): 1632–35. http://dx.doi.org/10.1016/s0925-9635(00)00320-4.

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Yamaguchi, Takashi, Shinya Takeoka, Toshihiro Iizuka, and Takashi Nakano. "Glass-substrate interaction in thick film technology." Scripta Metallurgica et Materialia 31, no. 8 (1994): 1013–18. http://dx.doi.org/10.1016/0956-716x(94)90519-3.

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31

Brulon, Cyprien, Baptiste Fix, Arthur Salmon, and Patrick Bouchon. "Optimization of plotter printing for sub-terahertz metallic metasurfaces fabrication on ultra-thin substrate." Journal of Micromechanics and Microengineering 32, no. 5 (2022): 055002. http://dx.doi.org/10.1088/1361-6439/ac5b97.

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Abstract Additive manufacturing processes have emerged as a promising way to conceive terahertz and millimetric components. In this work, we discuss a printing process for sub-terahertz metallic metasurfaces fabrication on ultra-thin substrates. We demonstrate the use of a plastic substrate with a micrometric thickness which makes this printing method a promising and low cost alternative to conventional optical lithography for the fabrication of flexible terahertz 2D metasurfaces. After detailing the key parameters and limitations, we applied the optimized process to fabricate samples composed

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32

Brezis, M., S. Rosen, K. Spokes, P. Silva, and F. H. Epstein. "Substrates induce hypoxic injury to medullary thick limbs of isolated rat kidneys." American Journal of Physiology-Renal Physiology 251, no. 4 (1986): F710—F717. http://dx.doi.org/10.1152/ajprenal.1986.251.4.f710.

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Under certain conditions, excess of substrates may be detrimental to the kidney. In isolated rat kidneys perfused with cell-free medium, oxidative metabolism to support reabsorptive transport in the presence of a limited oxygen supply results in hypoxic injury to medullary thick ascending limbs (mTAL). Since inhibitors of mitochondrial respiration markedly reduced this injury, we evaluated the effects of altering the availability of substrate for oxidative metabolism in the mTAL. Inhibition of glucose utilization with 2-deoxyglucose (50 mM) and simultaneous inhibition of long-chain fatty acid

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Zhao, Hu, Lei, Wan, Gong, and Zhou. "Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes." Nanomaterials 9, no. 11 (2019): 1634. http://dx.doi.org/10.3390/nano9111634.

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High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates.

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Shen, Zhenzhen, and Aleksey Reiderman. "High-Temperature Reliability of Wire Bonds on Thick Film." International Symposium on Microelectronics 2017, no. 1 (2017): 000531–35. http://dx.doi.org/10.4071/isom-2017-tha23_086.

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Abstract In a harsh environment, wire-bonded interconnects are critical for overall reliability of microelectronic assemblies. Aluminum is the dominating metallization of the die wire bonding pads and aluminum wires are used to achieve monometallic bonding system on die side. On the substrate side, a monometallic connection is not readily available and typically involves expensive aluminum thin-film deposition or labor-intensive bonding tabs. Nickel-palladium-gold galvanic or electro-less plating stacks are also used to improve bondability and reliability of non-monometallic Al wire bonds on t

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GAO, JIE, HONGJUN HEI, KE ZHENG, et al. "ON THE USE OF Mo/Mo2C GRADIENT INTERLAYERS IN DIAMOND DEPOSITION ONTO CEMENTED CARBIDE SUBSTRATES." Surface Review and Letters 23, no. 02 (2016): 1550109. http://dx.doi.org/10.1142/s0218625x15501097.

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Molybdenum/molybdenum carbide (Mo/Mo2C) gradient interlayers were prepared via double glow plasma surface alloying (DGPSA) technique onto cemented carbide (WC–Co) substrates for diamond deposition. The morphologies, phase composition and adhesion of the interlayers were investigated, as well as their effect on the subsequent diamond deposition. The results indicated that the Mo/Mo2C gradient interlayer deposited on WC–Co substrate was composed of 4.0-[Formula: see text]m-thick diffusion layer and 2.7-[Formula: see text]m-thick deposition layer. The Mo concentration decreased gradually with the

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Belorusov, D. A., E. I. Goldman, M. S. Afanasyev, and G. V. Chucheva. "High-frequency C–V-characteristics of membrane structures based on Ba1-xSrxTiO3." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 27, no. 3 (2024): 278–82. https://doi.org/10.17073/1609-3577j.met202405.586.

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The production of ferroelectric membrane-type structures was carried out in several sequential operations. First, wells were etched on a silicon (100) n-type plate with a thickness of 250 µm with a natural oxide on the surfaces in a hydrofluoric acid solution of 70 wt.% HF+30 wt.% H2O and a membrane blank was obtained. The diameter of the recesses in the silicon wafer at the base was 1.2 mm. Then, a 300 nm Ba0.8Sr0.2TiO3 layer and contact electrodes were deposited on the flat surface of the membrane blank. The minimum thickness of the n-Si substrate was 20 µm. Comparative measurements of high-

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Feldmann, D. M., D. C. Larbalestier, T. Holesinger, R. Feenstra, A. A. Gapud, and E. D. Specht. "Evidence for Extensive Grain Boundary Meander and Overgrowth of Substrate Grain Boundaries in High Critical Current Density ex Situ YBa2Cu3O7−x Coated Conductors." Journal of Materials Research 20, no. 8 (2005): 2012–20. http://dx.doi.org/10.1557/jmr.2005.0262.

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It has been generally accepted that YBa2Cu3O7−x (YBCO) films deposited on deformation textured polycrystalline metal tapes result in YBCO grain boundary (GB) networks that essentially replicate the GBs of the underlying substrate. Here we report that for thicker YBCO films produced by a BaF2 ex situ process, this is not true. Using electron backscatter diffraction combined with ion milling, we have been able to map the evolution of the YBCO grain structure and compare it to the underlying template in several coated conductors. For thin (≤0.5 μm) YBCO films deposited on rolling-assisted biaxial

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Кукушкин, С. А., А. В. Осипов, А. В. Редьков та Ш. Ш. Шарофидинов. "Рост объемных эпитаксиальных пленок AlN полуполярной ориентации на подложках Si (001) и гибридных подложках SiC/Si (001)". Письма в журнал технической физики 46, № 11 (2020): 22. http://dx.doi.org/10.21883/pjtf.2020.11.49494.18272.

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Abstract The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is compressed. The limiting (critical) thickness of the semipolar AlN layer on the Si(001) substrate is determined to be ~7.5 μm. When the film thickness exceeds this value, an ensemble of cracks is formed in the film, leading to its total cracking and exfoliation from the substrate. The semipol

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Kallinger, Birgit, Bernd Thomas, Sebastian Polster, Patrick Berwian, and Jochen Friedrich. "Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC." Materials Science Forum 645-648 (April 2010): 299–302. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.299.

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Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the formation and expansion of stacking faults during device operation. Hence, low N doped, thick epitaxial layers without BPDs are urgently needed for the realization of long-term stable SiC bipolar diodes. Such epilayers can be achieved if the conversion of the BPD into another harmless dislocation type is supported by proper epitaxial growth parameters and use of vicinal (off-cut) substrates. In this work, the influence of the substrate’s off-cut angle and

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Liu, Zongrong, and D. D. L. Chung. "Development of Glass-Free Metal Electrically Conductive Thick Films." Journal of Electronic Packaging 123, no. 1 (2000): 64–69. http://dx.doi.org/10.1115/1.1329131.

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Air-firable glass-free metal electrically conductive thick film pastes of different compositions were developed by using a titanium alloy component, and tin and zinc metal substitutes for glass frit used in traditional thick film pastes. The effect of different components on the electrical resistivity and bonding between the thick film and the alumina substrate was investigated. Thick films with low electrical resistivity and good bonding to the alumina substrate were obtained by using silver, zinc, tin, and TiCu alloy powders in the pastes. The addition of zinc at a small proportion (<0.5

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Borrero-López, Oscar, Mark Hoffman, Avi Bendavid, and Phil J. Martin. "Contact damage of tetrahedral amorphous carbon thin films on silicon substrates." Journal of Materials Research 24, no. 11 (2009): 3286–93. http://dx.doi.org/10.1557/jmr.2009.0405.

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We have investigated the fracture behavior of tetrahedral amorphous carbon films, with thicknesses 0.15 (ultrathin), 0.5 (thin), and 1.2 (thick) microns on silicon substrates. To that end, the systems were progressively loaded into a nanoindenter using a spherical tip, and surface and cross sections were subsequently examined using a focused ion beam miller at different loads. A transition was found as a function of film thickness: for ultrathin and thin films, cracking (radial and lateral) initiated in the silicon substrate and followed a similar path in the films. Thicker films, on the other

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Celentano, G., V. Boffa, L. Ciontea, et al. "Fabrication and Properties of Epitaxial Buffer Layers on Nonmagnetic Textured Ni Based Alloy Substrates." International Journal of Modern Physics B 13, no. 09n10 (1999): 1029–34. http://dx.doi.org/10.1142/s0217979299000904.

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Biaxially aligned YBCO thick films on oxide buffered metallic substrates is a promising route toward the fabrication of superconducting tapes operating at liquid nitrogen temperature. The role of buffer layer is to reduce the lattice mismatch between the substrate and the YBCO film, to adapt the thermal expansion coefficient, to hamper the diffusion of Ni in YBCO film and to prevent the oxidation of the metallic substrate surface. This paper presents a study regarding CeO 2 buffer layer deposition on a new nonmagnetic (001)[100] textured Ni-V alloy substrates. The deposition of CeO 2 was perfo

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Kakuda, Tatsunori, Tomoaki Futakuchi, Tsutomu Obata, Yuichi Sakai, and Masatoshi Adachi. "Preparation of CaBi₄Ti₄O₁₅ Based Thick Films on Si Substrates by Screen Printing." Key Engineering Materials 421-422 (December 2009): 50–53. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.50.

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CaBi4Ti4O15 based thick films were prepared by screen-printing method on Si substrates. Screen-printable pastes were prepared by kneading the CaBi4Ti4O15 powder in a three-roll mill with an organic vehicle. The remanent polarization of 6.3 C/cm2 and coercive field of 130kV/cm were obtained for the CaBi4Ti4O15 with Nb2O5 1wt% thick film fired at 1130°C. The cavity structure was prepared by etching of Si substrate. The displacement-electric field butterfly curves were obtained.

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Zhang, Z. M. "Far-Infrared Radiation Modulators Using High-Tc Superconductors." Journal of Heat Transfer 120, no. 1 (1998): 24–29. http://dx.doi.org/10.1115/1.2830049.

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The potential of using high-Tc superconductors as intensity modulators for far-infrared radiation is investigated in this work. Reflectance and transmittance for several design structures are computed using the published optical constants of the superconductor YBa2Cu3O7 and substrate materials. Notable differences in the reflectance and transmittance between the superconducting state and the normal state are illustrated. The best results are obtained based on the reflectance of thin films (10 nm–50 nm thick) on thin substrates (less than 100 μm thick) and for radiation incident on the substrat

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Li, Ying Ge, and Dong Xing Du. "Electronic Transport Properties of Hydrogenated Amorphous Silicon Thin Films Deposited on Plastic Substrates." Advanced Materials Research 221 (March 2011): 189–93. http://dx.doi.org/10.4028/www.scientific.net/amr.221.189.

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Aiming for potential application in flexible solar cells, electronic transport properties are studied for hydrogenated amorphous silicon thin films on plastic substrates. Intrinsic hydrogenated amorphous silicon layers are deposited on Kapton and Upilex-s polyimide substrates at temperatures of 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. Layers on 75μm and 125 thick Kapton and on 125 Upilex-s substrates are characterized by dark conductivity and activation energy measurements. It can be concluded that the intrinsic layer on 125μm thick Kapton and Upilex-s plast

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Xu, Fang Chao, and Kazuhiro Kusukawa. "Adhesion Strength of BNT Films Hydrothermally Deposited on Titanium Substrates." Advanced Materials Research 123-125 (August 2010): 399–402. http://dx.doi.org/10.4028/www.scientific.net/amr.123-125.399.

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Lead-free piezoelectric (Bi1/2Na1/2)TiO3 (BNT) films were deposited on 1 mm thick pure titanium(Ti) substrates by a hydrothermal method. Tensile tests were performed to quantitatively assess the adhesion strength between BNT films and Ti substrates. Ti substrates were pretreated by chemical polish and mechanical polish respectively prior to BNT film deposition. In the tensile test, the behavior of BNT film exfoliation was investigated by the replica method. The critical Ti substrate strain inducing BNT film exfoliation was determined by the aid of finite element analysis (FEM). In this study,

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Tsuruta, Akihiro, Miki Tanaka, Masashi Mikami, et al. "Development of Na0.5CoO2 Thick Film Prepared by Screen-Printing Process." Materials 13, no. 12 (2020): 2805. http://dx.doi.org/10.3390/ma13122805.

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The Na0.5Co0.9Cu0.1O2 thick film with the same thermoelectric performance as a Na0.5CoO2 bulk was formed on an alumina substrate by the screen-printing process. The power factor exceeded 0.3 mW/K2m, with the resistivity of 3.8 mΩcm and the thermopower of 108 μV/K. The thick film without any cracks strongly adhered to the substrate. The high-quality thick film had been realized through the carefully designed and improved process, mixing NaCl to promote the anisotropic sintering of Na0.5Co0.9Cu0.1O2, inserting a CuO interlayer to adhere the film and substrate, and Co–Cu substituting Cu for Co to

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Chhowalla, M., and G. A. J. Amaratunga. "Strongly adhering and thick highly tetrahedral amorphous carbon (ta–C) thin films via surface modification by implantation." Journal of Materials Research 16, no. 1 (2001): 5–8. http://dx.doi.org/10.1557/jmr.2001.0002.

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Highly tetrahedral amorphous carbon thin films have exceptional mechanical properties that make them ideal for many challenging wear applications such as protective overcoats for orthopaedic prostheses and aerospace components. However, the use of ta–C in many wear applications is limited due to the poor adhesion and the inability to grow thick films because of the large compressive stress. Here we report on a simple modification of the substrate growth surface by 1-keV ion bombardment using a cathodic vacuum arc (CVA) plasma prior to deposition of ta–C films at 100 eV. The 1-keV C+ ion bombar

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Wu, Lijun, Yimei Zhu, M. Suenaga, V. F. Solovyov, H. J. Wiesmann, and R. L. Sabatini. "Interfacial Microstructure and Crystallographic Orientations of Thick YBa2Cu3O7 Films Deposited on CeO2/LaAlO3 Substrate." Microscopy and Microanalysis 6, S2 (2000): 434–35. http://dx.doi.org/10.1017/s1431927600034668.

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The development of YBa2Cu3O7 (YBCO) thick films on a flexible, textured, metallic substrate has recently attracted considerable scientific and technical interest. It is well known that the interfacial microstructure plays an important role on the formation and alignment of the YBCO films. Thus, understanding the evolution of the phases near the substrate interface will help us to improve the quality of the films. In this study, BaF2, Cu, and Y were deposited on the (001) CeO2/LaAlO3 substrates without external heating in vacuum. Subsequently, a series of these films were annealed at 735°C for

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XU, FANGCHAO, and KAZUHIRO KUSUKAWA. "ADHESION ASSESSMENT OF BNT FILMS ON TITANIUM SUBSTRATES USING A TENSILE TEST." International Journal of Modern Physics: Conference Series 06 (January 2012): 473–78. http://dx.doi.org/10.1142/s2010194512003637.

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Lead-free piezoelectric ( Bi 1/2 Na 1/2) TiO 3 (abbreviated as BNT) films were deposited on 1 mm thick pure titanium( Ti ) substrates by a hydrothermal method. Tensile tests were performed to quantitatively assess the adhesion strength between BNT films and Ti substrates. Ti substrates were pretreated by chemical polish and mechanical polish respectively prior to BNT film deposition. In the tensile test, the behavior of BNT film exfoliation was investigated by the replica method. The critical Ti substrate strain inducing BNT film exfoliation was determined by the aid of finite element analysis

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