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Journal articles on the topic 'Thin film depositions'

Author: Grafiati

Published: 9 March 2023

Last updated: 31 July 2025

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1

Gadkar, Dr Gajendra Prasad. "Chemical Vapour Deposited CdO thin film for ethanol sensing." International Journal of Advanced Engineering, Management and Science 9, no. 4 (2023): 20–23. http://dx.doi.org/10.22161/ijaems.94.3.

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Herein we report the formation of cubic-phased Cadmium Oxide thin films using the aerosol-assisted chemical vapor deposition (AACVD) technique which gives high-quality, uniform thin film. The structural, morphological, and optical characterization of the deposited films was done using X-ray diffraction, SEM, TEM, UV-Vis spectroscopy, etc.The XRD analysis reports that crystallite size increases with film thickness. TEM shows particle size ~ 30 nm. SEM studies reveal an increase in surface roughness and porosity with the increase in thickness. Optical data shows band gap decreases with an increa

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Mustata, Ion, Cristian Lungu, Ionut Jepu, and Corneliu Porosnicu. "Thermionic Vacuum Discharges for Thin Film Depositions." Coatings 13, no. 9 (2023): 1500. http://dx.doi.org/10.3390/coatings13091500.

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The thermionic vacuum discharge method is very effective in that the films obtained using this technology are characterised by a very high degree of adhesion, density and purity because the deposition technique is carried out in high, very high or, if possible, in ultra-very high vacuum conditions with no gas present. When the substrate is placed in vacuum, no heat transfer particles are present, the substrate being heated only by the ion incident on the surface. This advantage recommends the TVD method for deposits on plastics or other thermally sensitive materials. Additionally, this slow he

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ILIESCU, Ciprian. "A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS." Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, no. 1-2 (2021): 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.

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The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition

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Kuchakova, Iryna, Maria Daniela Ionita, Eusebiu-Rosini Ionita, et al. "Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-frequency Plasma Jets." Materials 13, no. 6 (2020): 1296. http://dx.doi.org/10.3390/ma13061296.

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Thin film deposition with atmospheric pressure plasmas is highly interesting for industrial demands and scientific interests in the field of biomaterials. However, the engineering of high-quality films by high-pressure plasmas with precise control over morphology and surface chemistry still poses a challenge. The two types of atmospheric-pressure plasma depositions of organosilicon films by the direct and indirect injection of hexamethyldisiloxane (HMDSO) precursor into a plasma region were chosen and compared in terms of the films chemical composition and morphology to address this. Although

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Gutwirth, Jan, Magdaléna Kotrla, Tomáš Halenkovič, Virginie Nazabal, and Petr Němec. "Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin Films." Nanomaterials 12, no. 11 (2022): 1830. http://dx.doi.org/10.3390/nano12111830.

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The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga–Sb–Te system (tie-lines GaSb–GaTe and GaSb–Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets. Prepared thin films are characterized by means of energy dispersive X-ray analysis coupled with a scanning electron microscope to determine the chemical compositi

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Hsieh, Chi Hua, Li Te Tsou, Sheng Hao Chen, et al. "Comparison of Characteristics of Rapid Thermal and Microwave Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition." Advanced Materials Research 663 (February 2013): 372–76. http://dx.doi.org/10.4028/www.scientific.net/amr.663.372.

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In this study we use chemical and physical vapor depositions to fabricate amorphous silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave annealing (MWA) to activate or crystallize a-Si films and then observe their sheet resistances and crystallization. We discovered, although the cost of films fabricated by electron beam (e-beam) evaporation is relatively lower than by chemical vapor deposition (CVD), the effects of the former method are poorer whether in sheet resistance or film crystallization. In addition, only at the doping layer prepared by CV

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Singh, R., S. Kimothi, M. V. Singh, U. Rani, and A. S. Verma. "Structural and device fabrication of 2D-MoS2 thin film." Chalcogenide Letters 20, no. 8 (2023): 573–78. http://dx.doi.org/10.15251/cl.2023.208.573.

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In this research paper, we have prepared thin film of MoS2 by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 o C for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS2 based FET device has been fabricated by depositing thin film of MoS2 on p

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Tuttle, B. A., and R. W. Schwartz. "Solution Deposition of Ferroelectric Thin Films." MRS Bulletin 21, no. 6 (1996): 49–54. http://dx.doi.org/10.1557/s088376940004608x.

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Solution deposition has been used by almost every electroceramic research-and-development organization throughout the world to evaluate thin films. Ferrite, high-temperature-superconductor, dielectric, and antireflection coatings are among the electroceramics for which solution deposition has had a significant impact. Lithium niobate, lithium tantalate, potassium niobate, lead scandium tantalate, lead magnesium niobate, and bismuth strontium tantalate are among the ferroelectric thin films processed by solution deposition. However, lead zir-conate titanate (PZT) thin films have received the mo

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Usha Rajalakshmi, P., and Rachel Oommen. "Structural and Optical Characterization of Chemically Deposited Cuprous Oxide (Cu₂O) Thin Film." Advanced Materials Research 678 (March 2013): 118–22. http://dx.doi.org/10.4028/www.scientific.net/amr.678.118.

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Thin films of cuprous oxide are grown on microscope glass slides by chemical bath deposition technique. Molar solutions of copper nitrate, hydrazine and TEA constituted the chemical bath. The depositions are made by optimizing the concentration of precursor solution. X-ray diffraction measurements revealed the phase formation in the oxide films. The optical characteristics of Cu2O films are analyzed by means of UV-Vis-NIR spectrophotometer. The effect of annealing on the structural and optical properties of the film is investigated. The calculated direct optical band gap of the films is in the

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Nadzari, Khairul Aizat, Muhammad Firdaus Omar, Nor Shahira Md Rudin, and Abd Khamim Ismail. "Structural Analysis of DLC Thin Film Using X-Ray Reflectivity and Raman Spectroscopy Techniques." Key Engineering Materials 908 (January 28, 2022): 543–48. http://dx.doi.org/10.4028/p-x8wahl.

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The characteristics of sputtered amorphous diamond-like carbon-containing copper (DLC: Cu films) films deposited on Si (100) substrates and Si (111) in argon gas-filled chamber using carbon target under different substrates deposition time, and RF power. The samples were deposited by RF magnetron sputtering and analyzed using Raman spectroscopy and X-ray reflectivity (XRR) methods. Different parameters of depositions were used to study the structure, thickness, roughness, and density of the samples. The Cu preliminary layer act as a catalyst to growth the DLC thin-film analyzed using XRR analy

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Soonmin, Ho. "Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films." Applied Sciences 12, no. 16 (2022): 8184. http://dx.doi.org/10.3390/app12168184.

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Many researchers have reported on the preparation and characterization of thin films. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells, infrared windows, ultraviolet light emitting diodes, sensors, supercapacitors, biologic applications, and optoelectronic applications. The properties of these thin films strongly depend on the deposition techniques. Throughout the years, many investigations into the production of various types of thin films (by using the successive ionic layer adsorption and reaction (SILAR) method) were conducted. This method attracts interest

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Wei, Qiumei, Bo Lin, Hui Hua, Dexing Qi, Shuai Wang, and Yanzhao Li. "76‐2: Transparent PZT thin film with high piezoelectricity on glass substrates." SID Symposium Digest of Technical Papers 56, S1 (2025): 662–65. https://doi.org/10.1002/sdtp.18896.

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To realize high transparency and piezoelectric micro devices, Pb(Zr,Ti)O3 (PZT) thin film depositions, which were conducted by Sol‐Gel and Pulsed Laser Deposition(PLD) methods. This study presents the design and fabrication of multilayer thin films consisting of indium tin oxide (ITO) on glass substrates. In this study, an outstanding transmittance (85.1%) was achieved, which was fabricated by the Sol‐Gel route. The Sol‐Gel and PLD PZT piezoelectric devices had high inverse piezoelectric characteristics of |e31, f|, 11 C/m 2 and 13 C/m 2 under 20 VPeak‐to‐Peak (Vpp) voltage, respectively. It o

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Ali, N., M. A. Iqbal, S. T. Hussain, M. Waris, and S. A. Munair. "Optoelectronic Properties of Cadmium Sulfide Thin Films Deposited by Thermal Evaporation Technique." Key Engineering Materials 510-511 (May 2012): 177–85. http://dx.doi.org/10.4028/www.scientific.net/kem.510-511.177.

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The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150°C-300°C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300nm to 1100nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm2V-1S-1 respectively. The thermoelectric properties of the film were measured by

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Gent, Enno, Dereje H. Taffa, and Michael Wark. "Multi-Layered Mesoporous TiO2 Thin Films: Photoelectrodes with Improved Activity and Stability." Coatings 9, no. 10 (2019): 625. http://dx.doi.org/10.3390/coatings9100625.

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This work aims at the identification of porous titanium dioxide thin film (photo)electrodes that represent suitable host structures for a subsequent electrodeposition of plasmonic nanoparticles. Sufficient UV absorption and electrical conductivity were assured by adjusting film thickness and TiO 2 crystallinity. Films with up to 10 layers were prepared by an evaporation-induced self-assembly (EISA) method and layer-by-layer deposition. Activities were tested towards the photoelectrochemical oxidation of water under UV illumination. Enhanced activities with each additional layer were observed a

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Tu, Rong, Jin Huang, Song Zhang, and Lian Meng Zhang. "Epitaxial Growth of Copper Film by MOCVD." Key Engineering Materials 680 (February 2016): 507–10. http://dx.doi.org/10.4028/www.scientific.net/kem.680.507.

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Copper thin films were deposited on single crystal sapphire substrate via metal-organic MOCVD using Cu (acac)2 as precursor. X-ray diffraction (XRD) and Scanning Electronic Microscope (SEM) were employed for studying preferred orientation and microstructure. Atomic Force Microscope was utilized in order to characterize roughness of copper thin layer. By calculation of the Gibbs free energy, the reactions have been deeply understood. Depositions were carried out at various substrate temperatures in the rage 473K to 673K. It has been revealed that temperature determined the orientation and micro

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Mallamaci, Michael P., James Bentley та C. Barry Carter. "Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition". Proceedings, annual meeting, Electron Microscopy Society of America 51 (1 серпня 1993): 438–39. http://dx.doi.org/10.1017/s0424820100148022.

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Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of

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Sujarwata, Fiant, Handayani Langlang, Purwinarko Aji, and Susilo. "OFET Preparation by Lithography and Thin Film Depositions Process." TELKOMNIKA Telecommunication, Computing, Electronics and Control 16, no. 1 (2018): 77–83. https://doi.org/10.12928/TELKOMNIKA.v16i1.6544.

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The length of the channel OFET based thin film is determined during preparation takes place using the technique of lithography and mask during the metal deposition process. The lithography technique is the basic process steps in the manufacture of semiconductor devices. Lithography is the process of moving geometric shapes mask pattern to a thin film of material that is sensitive to light. The pattern of geometric shapes on a mask has specifications, as follows: long-distance source and drain channels varied, i.e. 100 μm, the width of the source and drain are made permanent. Bottom contact

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Fan, Zenghui, Ao Shen, Yong Xia, and Chengyuan Dong. "Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection." Micromachines 13, no. 12 (2022): 2099. http://dx.doi.org/10.3390/mi13122099.

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Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (PO) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in PO values for the DSCL depositions, the sensing parameters, including photogenerated current (Iphoto), sensitivity (S),

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Tugui, Catalin Andrei, Petrică Vizureanu, Carmen Nejneru, Manuela Cristina Perju, Dragoş Cristian Achitei, and Mihai Axinte. "Study of Various Thin Films Obtained by Several Deposition Methods ." Advanced Materials Research 1036 (October 2014): 201–6. http://dx.doi.org/10.4028/www.scientific.net/amr.1036.201.

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Properties of metallic materials can be improved with special materials depositions. Materials deposited on base materials are qualitatively better than the base materials, with a better hydroabrasive wear and corrosion resistance, also with a chemical attack or mechanical stress improved resistance.The thin layer deposition represents depositions (coatings) with hardening, lubricating, or decorative function, having a thickness of less than 10 micrometers.Such special materials are used in cutting-edge technology, such as nuclear turbines and turbine airplanes, space crafts or submarines, whi

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Dulmaa, Altangerel, and Diederik Depla. "Influence of Impurities on the Front Velocity of Sputter Deposited Al/CuO Thermite Multilayers." Materials 14, no. 23 (2021): 7224. http://dx.doi.org/10.3390/ma14237224.

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CuO and Al thin films were successively deposited using direct current (reactive) magnetron sputter deposition. A multilayer of five bilayers was deposited on glass, which can be ignited by heating a Ti resistive thin film. The velocity of the reaction front which propagates along the multilayer was optically determined using a high-speed camera. During the deposition of the aluminum layers, air was intentionally leaked into the vacuum chamber to introduce impurities in the film. Depositions at different impurity/metal flux ratios were performed. The front velocity reaches a value of approxima

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Pessoa, R. S., F. P. Pereira, G. E. Testoni, W. Chiappim, H. S. Maciel, and L. V. Santos. "Effect of substrate type on structure of TiO2 thin film deposited by atomic layer deposition technique." Journal of Integrated Circuits and Systems 10, no. 1 (2015): 38–42. http://dx.doi.org/10.29292/jics.v10i1.403.

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This paper discusses about the effect of substrate type on structure of titanium dioxide thin film deposited by atomic layer deposition technique using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100), cover glass and titanium, and the depositions were performed at temperatures ranging from 300ºC to 450 ºC. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase could be obtained in almost pure phase at temp

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Chirumamilla, Manohar, Tobias Krekeler, Deyong Wang, et al. "Magnetron Sputter Deposition of Nanostructured AlN Thin Films." Applied Nano 4, no. 4 (2023): 280–92. http://dx.doi.org/10.3390/applnano4040016.

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Aluminum nitride (AlN) is a material of growing interest for power electronics, fabrication of sensors, micro-electromechanical systems, and piezoelectric generators. For the latter, the formation of nanowire arrays or nanostructured films is one of the emerging research directions. In the current work, nanostructured AlN films manufactured with normal and glancing angle magnetron sputter depositions have been investigated with scanning and transmission electron microscopy, X-ray diffraction, atomic force microscopy, and optical spectroscopy. Growth of the nanostructures was realized utilizing

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Kim, Kwang Pyo, Wan Soo Song, Min Kyu Park, and Sang Jeen Hong. "Surface Analysis of Amorphous Carbon Thin Film for Etch Hard Mask." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 2032–38. http://dx.doi.org/10.1166/jnn.2021.18919.

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When the aspect ratio of a high aspect ratio (HAR) etching process is greatly increased, an amorphous carbon layer (ACL) hard mask is required for dynamic random-access memory (DRAM). To improve the durability of an etch hard mask, an understanding of the plasma deposition mechanisms and the deposited film properties associated with the plasma conditions and atomic structure, respectively, is required. We performed a series of plasma depositions, material characterizations and dry-etching to investigate the effect of the deposition process condition on the surface characteristics of an ACL fil

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Laszlo, Edwin Alexandru, Doina Crăciun, Gabriela Dorcioman, et al. "Characteristics of Thin High Entropy Alloy Films Grown by Pulsed Laser Deposition." Coatings 12, no. 8 (2022): 1211. http://dx.doi.org/10.3390/coatings12081211.

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Starting from solid-solutions (SS) of AlCoCrFeNix high-entropy alloys (HEAs) that have been produced with high purity constituent elements by vacuum arc remelting (VAR) method varying the nickel molar ratio x from 0.2 to 2.0, we investigated the synthesis of protective thin films of HEAs and high-entropy nitrides (HENs) with the aid of the pulsed laser deposition (PLD) system. The structure of all ten available bulk targets have been examined by means of X-Ray Diffraction (XRD), as well as their elemental composition by means of energy dispersion X-ray spectroscopy (EDS). Three targets with ni

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Sujarwata, Sujarwata, Fianti Fianti, Langlang Handayani, Aji Purwinarko, and Susilo Susilo. "OFET Preparation by Lithography and Thin Film Depositions Process." TELKOMNIKA (Telecommunication Computing Electronics and Control) 16, no. 1 (2018): 77. http://dx.doi.org/10.12928/telkomnika.v16i1.6544.

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Jones, J. G., R. R. Biggers, J. D. Busbee, D. V. Dempsey, and G. Kozlowski. "Image processing plume fluence for superconducting thin-film depositions." Engineering Applications of Artificial Intelligence 13, no. 5 (2000): 597–601. http://dx.doi.org/10.1016/s0952-1976(00)00039-7.

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Schurink, Bart, Wesley T. E. van den Beld, Roald M. Tiggelaar, Robbert W. E. van de Kruijs, and Fred Bijkerk. "Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions." Coatings 12, no. 5 (2022): 685. http://dx.doi.org/10.3390/coatings12050685.

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Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron thin films are realized by a number of physical and chemical deposition methods, including magnetron sputtering, electron-beam evaporation, plasma enhanced chemical vapor deposition (CVD), thermal/non-plasma CVD, remote plasma CVD and atmospheric pressure CVD. Various physical, mechanical and chemical characteristics of these boron thin films are investigated, i.e., deposition rate, uniformity, roughness, stress, composition, defectivity and chemical resistance. Boron fi

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Wani, Waseem Ahmad, Nilofar Naaz, B. Harihara Venkataraman, Souvik Kundu, and Kannan Ramaswamy. "Significantly reduced leakage current density in Mn-doped BiFeO₃ thin films deposited using spin coating technique." Journal of Physics: Conference Series 2070, no. 1 (2021): 012088. http://dx.doi.org/10.1088/1742-6596/2070/1/012088.

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Abstract BiFeO3 (BFO) and Mn-doped BFO thin films are prepared on indium tin oxide/glass substrates using wet chemical deposition technique. The role of Mn defects (3% to 10%) on the leakage current density and other physical properties of BFO thin film devices is investigated. The X-ray diffraction patterns confirm the single-phase formation of rhombohedrally distorted BFO thin films. The scanning electron microscopy images approve uniform and crack-free film depositions, which is of great importance to the practical device applications of such materials. The oxidation states are determined b

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Zhou, Zhen, Chaoyue Ji, Dongyang Hou, et al. "Molecular Dynamics Analysis of Multi-Factor Influences on Structural Defects in Deposited Mg-Matrix Zn Atom Films." Materials 17, no. 19 (2024): 4700. http://dx.doi.org/10.3390/ma17194700.

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Mg metal vascular stents not only have good mechanical support properties but also can be entirely absorbed by the human body as a trace element beneficial to the human body, but because Mg metal is quickly dissolved and absorbed in the human body, magnesium metal alone cannot be ideally used as a vascular stent. Since the dense oxide Zn film formed by Zn contact with oxygen in the air has good anti-corrosion performance, the Zn nanolayer film deposited on the Mg matrix vascular scaffold by magnetron sputtering can effectively inhibit the rapid dissolution of Mg metal. However, there are few s

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Rou, Shang Hsien. "Microstructure of polycrystalline near epitaxial (100) and (111) pyrochlore on A (100) MgO Substrate." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 1062–63. http://dx.doi.org/10.1017/s0424820100178446.

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New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electro

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Paosawatyanyong, Boonchoat, K. Honglertsakul, and D. K. Reinhard. "DLC-Film Schottky Barrier Diodes." Solid State Phenomena 107 (October 2005): 75–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.75.

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A microwave plasma reactor (MPR) is constructed as a facility for the plasma assisted chemical vapor deposition (PACVD) process. The reactor is a mode-adjustable resonance cavity of cylindrical shape. A 2.45 GHz microwave generator is used to ignite the plasma inside the lengthadjustable cavity. The diamond-like carbon (DLC) thin film depositions onto the silicon substrates are carried out using H2–CH4 discharge. The Schottky barrier diodes (SBD) are then formed on to the DLC films. The responses of DLC-SBD to DC and time varying signals have been studied as a function of frequency. The freque

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da Cunha, Tairan, Noureddine Adjeroud, Jérôme Guillot, Benoit Duez, Damien Lenoble, and Didier Arl. "On the interplay between a novel iron and iron-carbide atomic layer deposition process, the carbon nanotube growth, and the metal–carbon nanotube coating properties on silica substrates." Journal of Vacuum Science & Technology A 40, no. 3 (2022): 033415. http://dx.doi.org/10.1116/6.0001806.

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The fabrication of iron and iron carbide nanoparticles (NPs) for catalytic reactions such as the growth of carbon nanotubes (CNTs) compete with the challenge of covering a wide range of substrates with perfect control of the NP reactivity. We present in this work a novel atomic layer deposition (ALD) process to grow Fe/Fe3C thin films over silica flat substrates. The depositions were carried out exposing the surface through various number of ALD cycles, resulting in Fe-based films with thicknesses ranging from 4 nm to almost 40 nm. After a thermal treatment, the film dewetts into nanoparticles

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Ramesh, P. Bala, P. Venkatesh, and A. Abdul Jabbar. "Influence of Dithiocarbamate On Metal Complex and Thin Film Depositions." International Journal of Innovative Research in Science, Engineering and Technology 03, no. 08 (2014): 15301–9. http://dx.doi.org/10.15680/ijirset.2014.0308033.

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Kim, Jung H., Jeon Kim, Nuri Oh, et al. "Monolayer CoPt magnetic nanoparticle array using multiple thin film depositions." Applied Physics Letters 90, no. 2 (2007): 023117. http://dx.doi.org/10.1063/1.2428409.

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Usui, H., I. Yamada, and T. Takagi. "Anthracene and polyethylene thin film depositions by ionized cluster beam." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 1 (1986): 52–60. http://dx.doi.org/10.1116/1.573497.

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Wang, Siwei, Jie Jian, Cong Xu та ін. "A Review of ε-Ga2O3 Films: Fabrications and Photoelectric Properties". Materials 18, № 11 (2025): 2630. https://doi.org/10.3390/ma18112630.

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Gallium oxide (Ga2O3), as an ultra-wide bandgap semiconducting material, has attracted extensive research interest in recent years. Owing to its outstanding electrical and optical properties, as well as its high reliability, Ga2O3 shows great potential in power electronics, optoelectronics, memory devices, and so on. Among all the different polymorphs, ε-Ga2O3 is the second most thermally stable phase. It has a hexagonal crystal structure, which contributes to its isotropic physical properties and its suitable growth on low-cost commercial substrates, such as Al2O3, Si (111). However, there ar

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Ozen, Istem, and Mehmet Ali Gülgün. "Residual Stress Relaxation and Microstructure in ZnO Thin Films." Advances in Science and Technology 45 (October 2006): 1316–21. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1316.

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Stability under normal environmental conditions over a long period of time is crucial for sustainable thin-film device performance. Pure ZnO films with thicknesses in the 140 - 450 nm range were deposited on amorphous glass microscope slides and (100)-oriented single crystal silicon wafers by radio frequency magnetron sputtering. The depositions were performed at a starting temperature of 200 oC. ZnO films had a columnar microstructure strongly textured along the <0002> direction. XRD peak-shift analysis revealed that the films were under residual, compressive, in-plane stress of -5.46 G

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Abdelal, Aysegul, and Peter Mascher. "(Invited) Comparison of Compositional, Optical and Mechanical Properties of Sicn Thin Films Prepared By Ecr-PECVD with Different Hydrocarbon Precursors." ECS Meeting Abstracts MA2022-02, no. 18 (2022): 874. http://dx.doi.org/10.1149/ma2022-0218874mtgabs.

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Silicon carbon nitride (SiCN) ternary compounds present remarkable mechanical strength, bandgap tunability, optical responsivity in the UV region, and dielectric performance in microelectronics due to the combined features of silicon nitride (SiN), silicon carbide (SiC), and carbonitride (CN) [1]. The SiCN compounds can be formed using fabrication methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and chemical synthesis. Successful SiCN thin films fabricated with different techniques and their characteristics have been reported extensively in the literature; howe

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Mardare, Cezarina C., Pedro B. Tavares, Andréi I. Mardare, and Raluca Savu. "Synthesis of BiFeO₃ Ceramic Targets and Thin Film Deposition by Laser Ablation." Materials Science Forum 514-516 (May 2006): 328–32. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.328.

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A dense ceramic target of BiFeO3 was synthesized by the urea combustion method. X-ray diffraction indicates that this target is composed of a mixture of phases, the main one is BiFeO3, but Bi46Fe2O72 and Bi2Fe4O9 are also present in small amounts. The BiFeO3 target was used for depositing thin films on Pt/Ti/SiO2/Si substrates by the laser ablation technique. The depositions were made in oxygen atmosphere at pressures in the range between 5x10-3 and 2x10-2mbar, using a KrF laser. The substrate temperatures were 450 or 500°C and the laser energy, the frequency and the distance between the targe

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Koybasi, Ozhan, Ørnulf Nordseth, Trinh Tran, et al. "High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx." Sensors 21, no. 23 (2021): 7807. http://dx.doi.org/10.3390/s21237807.

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We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fi

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Mandić, Vilko, Arijeta Bafti, Luka Pavić, et al. "Humidity Sensing Ceria Thin-Films." Nanomaterials 12, no. 3 (2022): 521. http://dx.doi.org/10.3390/nano12030521.

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Lowering the constitutive domains of semiconducting oxides to the nano-range has recently opened up the possibility of added benefit in the research area of sensing materials, in terms both of greater specific surface area and pore volume. Among such nanomaterials, ceria has attracted much attention; therefore, we chemically derived homogeneous ceria nanoparticle slurries. One set of samples was tape-casted onto a conducting glass substrate to form thin-films of various thicknesses, thereby avoiding demanding reaction conditions typical of physical depositions, while the other was pressed into

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Reyes-Verdugo, Laura A., C. D. Gutiérrez-Lazos, J. Santos-Cruz, A. Chávez-Chávez, and J. G. Quiñones-Galván. "Bi2Te3 Thin Films Deposited by the Combination of Bi and Te Plasmas in a PLD Process." Micromachines 14, no. 3 (2023): 590. http://dx.doi.org/10.3390/mi14030590.

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Bismuth telluride thin films were grown by pulsed laser deposition by implementing a novel method that combines both Te and Bi plasmas resulting from the laser ablation of individual Bi and Te targets. Furthermore, the mean kinetic ion energy and density of the plasmas, as estimated by TOF curves obtained from Langmuir probe measurements, were used as control parameters for the deposition process. The obtained thin films exhibit a metallic mirror-like appearance and present good adhesion to the substrate. Morphology of the thin films was observed by SEM, yielding smooth surfaces where particul

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UCHIYAMA, K., A. KASAMATSU, Y. OTANI, and T. SHIOSAKI. "DEVELOPMENT OF PLZT THIN FILM DEPOSITIONS FOR OPTO-NANO ELECTRIC APPLICATIONS." Integrated Ferroelectrics 84, no. 1 (2006): 129–35. http://dx.doi.org/10.1080/10584580601085453.

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Takeda, Yasuhiko, Tomoyoshi Motohiro, Tatsumi Hioki, Hiroshi Niikura, and Shunsuke Niisaka. "Thin Film Retardation Plates of Silica Glass Fabricated by Oblique Depositions." Japanese Journal of Applied Physics 37, S1 (1998): 84. http://dx.doi.org/10.7567/jjaps.37s1.84.

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Toyoda, N., and I. Yamada. "Optical thin film formation by oxygen cluster ion beam assisted depositions." Applied Surface Science 226, no. 1-3 (2004): 231–36. http://dx.doi.org/10.1016/j.apsusc.2003.11.025.

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Kvashnin, Gennady, Boris Sorokin, Nikita Asafiev, Viacheslav Prokhorov, and Andrei Sotnikov. "Peculiarities of the Acoustic Wave Propagation in Diamond-Based Multilayer Piezoelectric Structures as “Me1/(Al,Sc)N/Me2/(100) Diamond/Me3” and “Me1/AlN/Me2/(100) Diamond/Me3” under Metal Thin-Film Deposition." Electronics 11, no. 2 (2022): 176. http://dx.doi.org/10.3390/electronics11020176.

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New theoretical and experimental results of microwave acoustic wave propagation in diamond-based multilayer piezoelectric structures (MPS) as “Me1/(Al,Sc)N/Me2/(100) diamond/Me3” and “Me1/AlN/Me2/(100) diamond/Me3” under three metal film depositions, including the change in the quality factor Q as a result of Me3 impact, were obtained. Further development of our earlier studies was motivated by the necessity of creating a sensor model based on the above fifth layered MPS and its in-depth study using the finite element method (FEM). Experimental results on the change in operational checkpoint f

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Capek, Jiri, Kalyani Shaji, Stanislav Haviar, and Petr Zeman. "Deposition of Composite Nanoparticle-Based Thin Films for Gas Sensing." ECS Meeting Abstracts MA2023-02, no. 62 (2023): 2923. http://dx.doi.org/10.1149/ma2023-02622923mtgabs.

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Working principle of conductometric gas sensors is based on modulation in electrical conductivity of the sensing material due to adsorption-desorption reactions between the target gas and the sensor surface. Nano-structuring the sensing material increases the effective surface area for interaction between the target gas and the sensing material thereby enhancing the sensorial response. Metal oxide semiconductors (MOS) have shown remarkable sensing performance to oxidizing and reducing gases. The combination of different MOS has often demonstrated to synergistically improve the gas sensing perf

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Zaera, Francisco. "The surface chemistry of the atomic layer deposition of metal thin films." Nanotechnology 35, no. 36 (2024): 362001. http://dx.doi.org/10.1088/1361-6528/ad54cb.

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Abstract In this perspective we discuss the progress made in the mechanistic studies of the surface chemistry associated with the atomic layer deposition (ALD) of metal films and the usefulness of that knowledge for the optimization of existing film growth processes and for the design of new ones. Our focus is on the deposition of late transition metals. We start by introducing some of the main surface-sensitive techniques and approaches used in this research. We comment on the general nature of the metallorganic complexes used as precursors for these depositions, and the uniqueness that solid

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Kinnunen, Sami, Manu Lahtinen, Kai Arstila, and Timo Sajavaara. "Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition." Coatings 11, no. 5 (2021): 542. http://dx.doi.org/10.3390/coatings11050542.

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Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and the hydrogen incorporation at different deposition temperatures from 30 to 200 ∘C. The total hydrogen concentration in the films was found to increase as the deposition temperature decreased. When the deposition temperature decreased close to room temperature, the main source of impurity in hydrogen changed from 1H to 2H. A sufficiently long purging time changed the main hydro

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Bardin, T. T., J. G. Pronko, and D. K. Kinell. "Thin Metal Film Adhesion Studies on GaAs." MRS Proceedings 77 (1986). http://dx.doi.org/10.1557/proc-77-731.

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ABSTRACTComparative thin film adhesion studies were performed on GaAs substrates using Au or Au-Ni-Ge, metallization materials. The influence of parameters such as crystal orientation, substrate surface preparation, deposition vacuum conditions, thickness and composition of films, and post-evaporative treatment such as ion-beam mixing and thermal annealing, on film adhesion was considered. The quality of the adhesion bond was measured using Scotch tape tests and a Sebastian adhesion tester. Film interfaces were characterized using AES, XPS, and RBS techniques. The results indicate that the mos

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