Relevant bibliographies by topics / Thin film field effect transistor

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Thin film field effect transistor'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Thin film field effect transistor"

1

Bof Bufon, C. C., and T. Heinzel. "Polypyrrole thin-film field-effect transistor." Applied Physics Letters 89, no. 1 (2006): 012104. http://dx.doi.org/10.1063/1.2219375.

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Clarisse, C., M. T. Riou, M. Gauneau, and M. le Contellec. "Field-effect transistor with diphthalocyanine thin film." Electronics Letters 24, no. 11 (1988): 674–75. http://dx.doi.org/10.1049/el:19880456.

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Aguilhon, L., J.-P. Bourgoin, A. Barraud, and P. Hesto. "Thin film organic channel field effect transistor." Synthetic Metals 71, no. 1-3 (1995): 1971–74. http://dx.doi.org/10.1016/0379-6779(94)03130-x.

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Koezuka, H., A. Tsumura, and T. Ando. "Field-effect transistor with polythiophene thin film." Synthetic Metals 18, no. 1-3 (1987): 699–704. http://dx.doi.org/10.1016/0379-6779(87)90964-7.

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Firek, Piotr, Jakub Szarafiński, Grzegorz Głuszko, and Jan Szmidt. "Field effect transistor with thin AlOxNy film as gate dielectric." Microelectronics International 37, no. 2 (2020): 103–7. http://dx.doi.org/10.1108/mi-11-2019-0074.

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Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the properties of these layers depending on their stoichiometry, which can be easily controlled by the parameters of the magnetron sputtering process. Therefore, a continuous spectrum of properties can be achieved from the specific values for oxide to the specific ones for nitride, thus opening a wide range of applications in high power, high temperature and high frequency electronics, optics and sensors and even acoustic devices. Design/methodology/approach The basic subject of this study is n-channel transistors manufactured using silicon with 50-nm-thick AlOxNy films deposited on a silicon dioxide buffer layer via magnetron sputtering in which the gate dielectric was etched with wet solutions and/or dry plasma mixtures. Furthermore, the output, transfer and charge pumping (CP) characteristics were measured and compared for all modifications of the etching process. Findings An electrical measurement of MISFETs with AlOxNy gate dielectrics was conducted to plot the current-voltage and CP characteristics and examine the influence of the etching method on MISFET parameters. Originality/value In this report, a flat band and threshold voltage and the density of interface traps were determined to evaluate and improve an AlOxNy-based MISFET performance toward highly sensitive field effect transistors for hydrogen detection by applying a Pd-based nanocrystalline layer. The sensitivity of the detectors was highly correlated with the quality of the etching process of the gate dielectrics.
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Pang, Lisa Y. S., Simon S. M. Chan, Richard B. Jackman, Colin Johnston, and Paul R. Chalker. "A thin film diamondp-channel field-effect transistor." Applied Physics Letters 70, no. 3 (1997): 339–41. http://dx.doi.org/10.1063/1.118408.

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QIU, Yong. "Preparation of organic thin-film field effect transistor." Chinese Science Bulletin 47, no. 18 (2002): 1529. http://dx.doi.org/10.1360/02tb9336.

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Inokawa, Hiroshi, Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, and Keiichi Torimitsu. "Field-Effect Transistor with Deposited Graphite Thin Film." Japanese Journal of Applied Physics 46, no. 4B (2007): 2615–17. http://dx.doi.org/10.1143/jjap.46.2615.

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Daniel, T. O., U. E. Uno, K. U. Isah та U. Ahmadu. "Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application". Revista Mexicana de Física 67, № 2 Mar-Apr (2021): 263–68. http://dx.doi.org/10.31349/revmexfis.67.263.

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This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film. SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.
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Wei, Wang, Shi Jia-Wei, Liang Chang, et al. "Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene." Chinese Physics Letters 22, no. 2 (2005): 496–98. http://dx.doi.org/10.1088/0256-307x/22/2/064.

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Dissertations / Theses on the topic "Thin film field effect transistor"

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Whyte, Alex. "Thin film studies of planar transition metal complexes." Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/7966.

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At present the field of molecular electronics - also known as molecular semiconductors, organic semiconductors, plastic electronics or organic electronics - is dominated by organic materials, both polymeric and molecular, with much less attention being focused on transition metal based complexes despite the advantages they can offer. Such advantages include tuneable frontier orbitals through the ligand/metal interaction and the ability to generate stable paramagnetic species. Devices containing radical materials are particularly interesting in order to examine the interplay between conduction and spin - an effect which is not yet properly understood but can give rise to exotic behaviour. A series of homoleptic, bis-ligand Ni(II) and Cu(II) complexes were prepared using three structurally related phenolic oxime ligands, 2-hydroxy-5-t-octylacetophenone oxime (t-OctsaoH), 2-hydroxy-5-n-propylacetophenone oxime (n-PrsaoH) and 2- hydroxyacetophenone oxime (HsaoH). The complexes were characterised by single-crystal X-ray diffraction, cyclic voltammetry, UV/Vis spectroscopy, field-effect-transistor measurements, DFT/TD-DFT calculations and in the case of the paramagnetic species, EPR and magnetic susceptibility. Variation of the substituent on the ligand from t-octyl to n-propyl to H enabled electronic isolation of the complexes in the crystal structures of M(t-OctsaoH)2, which contrasted with π-stacking interactions observed in the crystal packing of M(n-PrsaoH)2 and of M(HsaoH) (M = Ni, Cu). This was further evidenced by comparing the antiferromagnetic interactions observed in samples of Cu(n-PrsaoH)2 and Cu(HsaoH)2 with the ideal paramagnetic behaviour for Cu(t-OctsaoH)2 down to 1.8 K. Despite isostructural single crystal structures for M(n-PrsaoH)2, thin-film X-ray diffraction and SEM revealed different morphologies depending on the metal and the deposition method employed. However, the complexes of M(n-PrsaoH)2 and M(HsaoH) failed to demonstrate significant charge transport in an FET device despite displaying the ability to form π- stacking structures. A series of planar Ni(II), Cu(II) and Co(II) dibenzotetraaza[14]annulenes (dbtaa) and dinapthotetraaza[14]annulenes (dntaa) were synthesised and studied crystallographically, optically, electrochemically and magnetically. Thin films of each of these complexes have been prepared by vacuum deposition to evaluate the field-effect transistor (FET) performance as well as the morphology and crystallinity of the film formed. Single crystal data revealed that Ni(dbtaa) and Cu(dbtaa) are isomorphous to each other, with Co(dbtaa) displaying a different crystallographic packing. The electrochemistry and UV/Vis absorption studies indicate the materials are redox active and highly coloured, with molar extinction coefficients as large as 80,000 M-1cm-1 in the visible region. The paramagnetic Cu(II) and Co(II) complexes display weak 1-dimensional antiferromagnetic interactions and were fit to the Bonner-Fisher chain model. The data revealed that the Co(II) species possesses much stronger magnetic exchange interactions compared with the Cu(II) complex. Each of the materials formed polycrystalline films when vacuum deposited and all showed ptype field-effect transistor behaviour, with modest charge carrier mobilities in the range of 10-5 to 10-9 cm2 V-1 s-1 . SEM imaging of the substrates indicates that the central metal ion, and its sublimation temperature, has a crucial role in defining the morphology of the resulting film. Structurally related Cu(II) and Ni(II) dithiadiazoletetraaza[14]annulene (dttaa) macrocycles were synthesised and studied in the context of their thin film electrochemical, conducting and morphological properties. Both the Ni(II) and Cu(II) complexes were found to be volatile under reduced pressure, which allowed crystals of both materials to be grown and the single crystal structures solved. Interestingly, the crystal packing of these heterocyclic macrocycles varies depending on whether the central metal ion is Cu(II) or Ni(II), which is in contrast to the analogous dibenzotetrazaannulenes complexes. Soluble Ni(II) analogues containing benzoyl groups on the meso- positions of the macrocycle (dttaaBzOR) were also prepared and contrasted with the insoluble Ni(dttaa) complexes in terms of their solution optical and electrochemical properties. Thin film electrochemical studies of Cu(dttaa) and Ni(dttaa) showed chemically reversible oxidative processes but on scanning to reductive potentials the films disintegrated almost immediately as the bulky counter tetrabutylammonium cation entered the thin film. FET studies undertaken on polycrystalline films of both complexes, using various device configurations and surface treatments, failed to realise any gate effect. Thin film XRD measurements indicate that films of both complexes formed by vacuum deposition are crystalline and contain a mixture of molecular alignments, with molecules aligning “edge on” and “face down” to the substrate. SEM imaging failed to effectively resolve the morphology of the films implying the sizes of the crystallites are small, which may help to explain the lack of FET effect. A series of bis-ligand diimine Ni, Cu and Pd complexes have been synthesised from the ligand 4,5-bis(dodecyloxy)benzene-1,2-diamine (dbdaH2). The same ligand was also used to prepare a series of soluble Cu(II) and Ni(II) tetraaza[14]annulene macrocycles. All the bis-ligand diimine complexes were found to suffer from instability in air due to the ease at which the complexes are oxidised. The Ni complex, Ni(dbda)2, was found to display a NIR transition in the region of 971 to 1024 nm depending on the polarity of the solvent that the molecule is dissolved in. Solution electrochemistry studies of Ni(dbda)2 reaffirmed the facile nature of the first oxidative process, with the HOMO energy calculated at -4 eV by hybrid-DFT. This compound failed to yield semiconducting behaviour in an FET device despite the use of surface treatments aimed at promoting suitable molecular alignment across the conducting channel.
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Roberson, Luke Bennett. "Ultrapurification and deposition of polyaromatic hydrocarbons for field effect transistors." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/30950.

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Roberson, Luke Bennett. "Understanding organic thin film properties for microelectronic organic field-effect transistors and solar cells." Diss., Available online, Georgia Institute of Technology, 2005, 2005. http://etd.gatech.edu/theses/available/etd-11072005-111532/.

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Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2006.<br>Mohan Srinivasarao, Committee Member ; David Collard, Committee Member ; Uwe Bunz, Committee Member ; Art Janata, Committee Member ; Marcus Weck, Committee Member ; Laren Tolbert, Committee Chair.
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Tamjidi, Mohammad R. "Characteristics of N-channel accumulation mode thin film polysilicon mosfets. /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,132.

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Kwan, Man-chi. "Mobility enhancement for organic thin-film transistors using nitridation method." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37181580.

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Kwan, Man-chi, and 關敏志. "Mobility enhancement for organic thin-film transistors using nitridation method." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37181580.

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Larsson, Oscar. "Polarization characteristics in polyelectrolyte thin film capacitors : Targeting field-effect transistors and sensors." Licentiate thesis, Norrköping : Department of Science and technology, Linköping University, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-51547.

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Yurchuk, Ekaterina. "Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172000.

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Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
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Lee, Jiho. "Impact of process parameter modification on poly(3-hexylthiophene) film morphology and charge transport." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50409.

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Organic electronics based on π-conjugated semi-conductor raises new technology, such as organic film transistors, e-paper, and organic photovoltaic cells that can be implemented cost-effectively on large-area applications. Currently, the device performance is limited by low charge carrier mobility. Poly(3-hexylthiophene) (P3HT) and organic field effect transistors (OFET) is used as a model to investigate morphology of the organic film and corresponding electronic properties. In this thesis, processing parameters such as boiling points and solubility are controlled to impact the micro- and macro-morphology of the film to enhance the charge transport of the device. Alternative approach to improve ordering of polymer chains and increase in charge transport without post-treatment of P3HT solution is studied. The addition of high boiling good solvent to the relatively low boiling main solvent forms ordered packing of π-conjugated polymers during the deposition process. We show that addition of 1% of dichlorobenzene (DCB) to the chloroform based P3HT solution was sufficient to improve wetting and molecular structures of the film to increase carrier mobility. Systematic study of solvent-assisted re-annealing technique, which has potential application in OFET encapsulation and fabrication of top-contact OFET, is conducted to improve mobility of OFET, and, to suggest a cost-effective processing condition suitable for industrial application. Three process parameters: boiling point, polarity, and solubility are investigated to further understand the trend of film response to the solvent-assisted technique. We report the high boiling non-polar solvents with relatively high RED values promote highest improvement in molecular packing and formulate crystalline structure of the thin film, which increases the device performance.
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Ternullo, Luigi. "Investigations on thin film polysilicon MOSFETs with Si-Ge ion implanted channels /." Online version of thesis, 1992. http://hdl.handle.net/1850/11166.

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Books on the topic "Thin film field effect transistor"

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Bao, Zhenan. Organic field-effect transistors VII and organic semiconductors in sensors and bioelectronics: 10-12 August 2008, San Diego, California, USA. Edited by SPIE (Society) and Air Products and Chemicals, inc. SPIE, 2008.

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Bao, Zhenan. Organic field-effect transistors VI: 26-28 August 2007, San Diego, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. SPIE, 2007.

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Bao, Zhenan. Organic field-effect transistors VI: 26-28 August 2007, San Diego, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. SPIE, 2007.

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(Society), SPIE, and Merck Chemicals Ltd, eds. Organic field-effect transistors X: 22-23 August 2011, San Diego, California, United States. SPIE, 2011.

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Bao, Zhenan, and Iain McCulloch. Organic field-effect transistors VIII: 3-5 August 2009, San Diego, California, United States. Edited by SPIE (Society), Aldrich Chemical Company, Corning Incorporated, and Solvay S. A. (Firm). SPIE, 2009.

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Bao, Zhenan, and Iain McCulloch. Organic field-effect transistors IX: 2-4 August 2010, San Diego, California, United States. Edited by SPIE (Society). SPIE, 2010.

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Calif.) Organic Field-Effect Transistors (Conference) (12th 2013 San Diego. Organic Field-Effect Transistors XII, and Organic Semiconductors in Sensors and Bioelectronics VI: 26-29 August 2013, San Diego, California, United States. Edited by Bao Zhenan, McCulloch Iain 1964-, Shinar Ruth, et al. SPIE, 2013.

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Maeda, Shigenobu. Teishōhi denryoku kōsoku MOSFET gijutsu: Takesshō shirikon TFT fukagata SRAM to SOI debaisu. Sipec, 2002.

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Shields, James Alexander. Thin film field effect devices. The author], 1986.

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Bao, Zhenan. Organic Field-Effect Transistors 5. Society of Photo Optical, 2006.

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Book chapters on the topic "Thin film field effect transistor"

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Brotherton, S. D. "Insulated Gate Field Effect Transistors, IGFETs." In Introduction to Thin Film Transistors. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_3.

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Bao, Zhenan. "Organic and Polymeric Materials for the Fabrication of Thin Film Field-Effect Transistors." In ACS Symposium Series. American Chemical Society, 1999. http://dx.doi.org/10.1021/bk-1999-0735.ch015.

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Fujimura, Norifumi, and Takeshi Yoshimura. "Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs." In Topics in Applied Physics. Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-024-0841-6_6.

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Foglietti, P., G. Fortunato, L. Mariucci, and C. Reita. "Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin Pecvd a-SiO2 Gate Dielectric." In Crucial Issues in Semiconductor Materials and Processing Technologies. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_2.

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Wöllenstein, J., M. Jägle, and H. Böttner. "A Gas Sensitive Tin Oxide Thin-Film Transistor." In Advanced Gas Sensing - The Electroadsorptive Effect and Related Techniques. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4419-8612-2_4.

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Ma, Hong, Orb Acton, Guy Ting, Jae Won Ka, Hin-Lap Yip, and Alex K. Y. Jen. "Ultrathin Self-Assembled Organophosphonic Acid Monolayers/Metal Oxides Hybrid Dielectrics for Low-Voltage Field-Effect Transistors." In Organic Thin Films for Photonic Applications. American Chemical Society, 2010. http://dx.doi.org/10.1021/bk-2010-1039.ch016.

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Mandal, Suman, and Dipak K. Goswami. "Flexible Organic Field-Effect Transistors Using Barium Titanate as Temperature-Sensitive Dielectric Layer." In Surfaces and Interfaces of Metal Oxide Thin Films, Multilayers, Nanoparticles and Nano-composites. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-74073-3_5.

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Aanchal Verma and Poornima Mittal. "Contact Thickness Variation Effect on Performance of Novel Organic Thin Film Transistor." In Proceeding of International Conference on Intelligent Communication, Control and Devices. Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-1708-7_98.

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Gupta, Partha Sarathi, Sayan Kanungo, Hafizur Rahaman, and Partha Sarathi Dasgupta. "Simulation Study of an Ultra Thin Body Silicon On Insulator Tunnel Field Effect Transistor." In Progress in VLSI Design and Test. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-31494-0_51.

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Ahlers, Simon, Thomas Becker, Wolfgang Hellmich*, Christine Bosch-v. Braunmühl, and Gerhard Müller. "Temperature- and Field-Effect-Modulation Techniques for Thin-Film Metal Oxide Gas Sensors." In Advanced Gas Sensing - The Electroadsorptive Effect and Related Techniques. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4419-8612-2_6.

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Conference papers on the topic "Thin film field effect transistor"

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Diemer, Peter J., Angela F. Harper, Muhammad Rizwan Khan Niazi, John E. Anthony, Aram Amassian, and Oana D. Jurchescu. "Organic thin-film transistor fabrication using a laser printer (Conference Presentation)." In Organic Field-Effect Transistors XVI, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2017. http://dx.doi.org/10.1117/12.2275249.

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Labram, John G. "Thin film retinomorphic sensors." In Organic and Hybrid Field-Effect Transistors XX, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2021. http://dx.doi.org/10.1117/12.2593517.

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Amit, Moran, Hyunwoong Kim, Zhenghui Wu, Jason D. Azoulay, and Tse Nga Ng. "Printed contacts in thin film transistors (Conference Presentation)." In Organic Field-Effect Transistors XVI, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2017. http://dx.doi.org/10.1117/12.2271390.

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Aguilhon, L., J. P. Bourgoin, A. Barraud, and P. Hesto. "Thin film, organic channel field effect transistor." In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.835603.

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Rolin, Cedric, Robby Janneck, Khalid Muhieddine, et al. "Contact resistance characterization in organic thin film transistors (Conference Presentation)." In Organic Field-Effect Transistors XVII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2018. http://dx.doi.org/10.1117/12.2320949.

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Dodabalapur, Ananth, Kelly Liang, and Oleksiy Kratko. "New designs for high-performance polymer thin-film transistors (Conference Presentation)." In Organic Field-Effect Transistors XVII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2018. http://dx.doi.org/10.1117/12.2322180.

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Shi, Lingyun, Ke Tang, Jian Huang, Qinkai Zeng, and Linjun Wang. "Preparation of an optically activated field effect transistor based on diamond film." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888360.

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Minari, Takeo, Xuying Liu, Qingqing Sun, Wanli Li, and Masayuki Kanehara. "High-performance organic thin-film transistors by printing (Conference Presentation)." In Organic and Hybrid Field-Effect Transistors XVIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2019. http://dx.doi.org/10.1117/12.2530441.

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Labram, John. "Evaluating carrier mobility in hybrid perovskites for thin film transistors." In Organic and Hybrid Field-Effect Transistors XIX, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2020. http://dx.doi.org/10.1117/12.2568610.

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Aghamalyan, Natella R., Ruben K. Hovsepyan, Evgenia A. Kafadaryan, Silva I. Petrosyan, Armen R. Poghosyan, and Eduard S. Vardanyan. "Memory elements based on thin film field-effect transistor." In International Conference on Laser Physics 2010, edited by Aram V. Papoyan. SPIE, 2010. http://dx.doi.org/10.1117/12.891259.

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