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Journal articles on the topic 'Thin film field effect transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Bof Bufon, C. C., and T. Heinzel. "Polypyrrole thin-film field-effect transistor." Applied Physics Letters 89, no. 1 (2006): 012104. http://dx.doi.org/10.1063/1.2219375.

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2

Clarisse, C., M. T. Riou, M. Gauneau, and M. le Contellec. "Field-effect transistor with diphthalocyanine thin film." Electronics Letters 24, no. 11 (1988): 674–75. http://dx.doi.org/10.1049/el:19880456.

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3

Aguilhon, L., J.-P. Bourgoin, A. Barraud, and P. Hesto. "Thin film organic channel field effect transistor." Synthetic Metals 71, no. 1-3 (1995): 1971–74. http://dx.doi.org/10.1016/0379-6779(94)03130-x.

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4

Koezuka, H., A. Tsumura, and T. Ando. "Field-effect transistor with polythiophene thin film." Synthetic Metals 18, no. 1-3 (1987): 699–704. http://dx.doi.org/10.1016/0379-6779(87)90964-7.

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5

Firek, Piotr, Jakub Szarafiński, Grzegorz Głuszko, and Jan Szmidt. "Field effect transistor with thin AlOxNy film as gate dielectric." Microelectronics International 37, no. 2 (2020): 103–7. http://dx.doi.org/10.1108/mi-11-2019-0074.

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Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the properties of these layers depending on their stoichiometry, which can be easily controlled by the parameters of the magnetron sputtering process. Therefore, a continuous spectrum of properties can be achieved from the specific values for oxide to the specific ones for nitride, thus opening a wide ra

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6

Pang, Lisa Y. S., Simon S. M. Chan, Richard B. Jackman, Colin Johnston, and Paul R. Chalker. "A thin film diamondp-channel field-effect transistor." Applied Physics Letters 70, no. 3 (1997): 339–41. http://dx.doi.org/10.1063/1.118408.

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7

QIU, Yong. "Preparation of organic thin-film field effect transistor." Chinese Science Bulletin 47, no. 18 (2002): 1529. http://dx.doi.org/10.1360/02tb9336.

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8

Inokawa, Hiroshi, Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, and Keiichi Torimitsu. "Field-Effect Transistor with Deposited Graphite Thin Film." Japanese Journal of Applied Physics 46, no. 4B (2007): 2615–17. http://dx.doi.org/10.1143/jjap.46.2615.

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9

Daniel, T. O., U. E. Uno, K. U. Isah та U. Ahmadu. "Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application". Revista Mexicana de Física 67, № 2 Mar-Apr (2021): 263–68. http://dx.doi.org/10.31349/revmexfis.67.263.

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This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-

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10

Wei, Wang, Shi Jia-Wei, Liang Chang, et al. "Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene." Chinese Physics Letters 22, no. 2 (2005): 496–98. http://dx.doi.org/10.1088/0256-307x/22/2/064.

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11

Kuo, Chin-Tsou, and Wen-Hong Chiou. "Field-effect transistor with polyaniline thin film as semiconductor." Synthetic Metals 88, no. 1 (1997): 23–30. http://dx.doi.org/10.1016/s0379-6779(97)80879-x.

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12

Li, Ling, Kwan-Soo Chung, and Jin Jang. "Field effect mobility model in organic thin film transistor." Applied Physics Letters 98, no. 2 (2011): 023305. http://dx.doi.org/10.1063/1.3543900.

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13

Komura, Noriko, Hidenori Goto, Xuexia He, et al. "Characteristics of [6]phenacene thin film field-effect transistor." Applied Physics Letters 101, no. 8 (2012): 083301. http://dx.doi.org/10.1063/1.4747201.

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14

Lee, Hosang, Kyoungah Cho, and Sangsig Kim. "Effect of Electrode Materials on the Electrical Characteristics of Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors." Journal of Nanoscience and Nanotechnology 21, no. 8 (2021): 4325–29. http://dx.doi.org/10.1166/jnn.2021.19397.

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In this study, we investigated the effect of electrode materials on the electrical characteristics of coplanar top-gate a-ITGZO thin-film transistors, in which the gate, source, and drain electrodes were made of the same metal, Ti or Al. The field-effect mobilities of the a-ITGZO thin-film transistors with Ti and Al electrodes were 35.2 and 20.1 cm2/V·s, respectively, and the threshold voltage of the a-ITGZO thin-film transistor with Ti electrodes was −0.4 V, whereas that of the transistor with Al electrodes was −1.8; this shift is attributed to the fact that Ti has a higher work function than

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15

Won, Do Young, Manh-Cuong Nguyen, Hyun Min Kim, et al. "Residual Image Reduction Using Electric Field Shield Metal in Plastic Organic Light-Emitting Diode Display." Journal of Nanoscience and Nanotechnology 20, no. 11 (2020): 6884–89. http://dx.doi.org/10.1166/jnn.2020.18806.

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A plastic organic light-emitting diode display is a device that emits light in an organic layer in proportion to the amount of current applied from a thin film transistor, which constitutes a pixel. However, it was confirmed that the residual image was shown by the operation of the thin film transistor. To suppress residual image, the effect of electric field was studied in operation of a-IGZO thin film transistor. The a-IGZO thin film transistor, in which a polyimide film was used as a substrate, was applied as a driving thin film transistor for pixel circuits in a plastic organic light-emitt

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16

Kubozono, Yoshihiro, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, and Yasushi Nishihara. "Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes." Journal of Materials Chemistry C 3, no. 10 (2015): 2413–21. http://dx.doi.org/10.1039/c4tc02413c.

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Field-effect transistors have been fabricated that use thin films of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes (C<sub>n</sub>-PDTs), with the transistor based on a thin film of C<sub>12</sub>-PDT showing aμas high as ∼2 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, which is promising for future practical electronics.

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17

Pons Flores, Cesar Adrian, Israel Mejía, Manuel Quevedo-Lopez, Clemente Alvarado Beltran, and Luis Martín Reséndiz. "Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors." Superficies y Vacío 30, no. 3 (2017): 46–50. http://dx.doi.org/10.47566/2017_syv30_1-030046.

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We analyze the influence of three combined effects on the contact resistance in organic- based thin film transistors: a) the active layer thickness, b) device architecture and c) semiconductor degradation. Transfer characteristics and parasitic series resistance were analyzed in devices with three different active layer thicknesses (50, 100 and 150 nm) using top contact (TC) and bottom contact (BC) thin film transistor (TFT) configurations. In both configurations, the lowest contact resistance (2.49 × 106 ?) and the highest field-effect mobility (4.8 × 10-2 cm2/V·s) was presented in devices wi

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18

Juang, Miin-Horng, P. S. Hu, and S. L. Jang. "Formation of polycrystalline-Si thin-film transistors with tunneling field-effect-transistor structure." Thin Solid Films 518, no. 14 (2010): 3978–81. http://dx.doi.org/10.1016/j.tsf.2009.11.017.

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19

Juang, M. H., Y. S. Peng, J. L. Wang, D. C. Shye, C. C. Hwang, and S. L. Jang. "Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure." Solid-State Electronics 54, no. 12 (2010): 1686–89. http://dx.doi.org/10.1016/j.sse.2010.08.009.

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20

Aoki, N., K. Sudou, K. Matsusaki, K. Okamoto, and Y. Ochiai. "Scanning gate study of organic thin-film field-effect transistor." Journal of Physics: Conference Series 109 (March 1, 2008): 012007. http://dx.doi.org/10.1088/1742-6596/109/1/012007.

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21

Feldblyum, Jeremy I., Clara H. McCreery, Sean C. Andrews, et al. "Few-layer, large-area, 2D covalent organic framework semiconductor thin films." Chemical Communications 51, no. 73 (2015): 13894–97. http://dx.doi.org/10.1039/c5cc04679c.

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A method to form thin films of a semiconducting covalent organic framework is disclosed. Thin film formation allows facile transfer to device-relevant substrates, enabling the first demonstration of a COF-based field-effect transistor.

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22

Liu, Rui Chao, Hong Liang Zhang, and Run Yuan Li. "Low-Voltage InGaZnO Thin-Film Transistors Gated by SiO₂ Proton Conducting Films." Advanced Materials Research 1033-1034 (October 2014): 1176–81. http://dx.doi.org/10.4028/www.scientific.net/amr.1033-1034.1176.

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Low-voltage (1.5 V) InGaZnO (IGZO) thin-film transistors (TFTs) gated by the SiO2 proton conducting films were self-assembled by a gradient shadow mask in sputtered self-assembled IGZO channel process. The IGZO TFTs have a high-performance with a large current on/off ratio of ≥1.2×106, a low subthreshold swing of ≤120 mV/decade and a high field-effect mobility of 2.2 ~ 6.9 cm2/V·s. Threshold voltage is tuned by various thicknesses of IGZO channel. Both depletion mode and enhancement mode on the same chip is obtained, which will implement a direct-coupled field-effect transistor logic circuit.

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23

Ojonugwa Daniel, Thomas, Uno Essang Uno, Kasim Uthman Isah, and Umaru Ahmadu. "Structural and microstructural study of SnS thin film semiconductor of 0.2." International Journal of Physical Research 7, no. 1 (2019): 26. http://dx.doi.org/10.14419/ijpr.v7i1.27700.

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SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consis

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24

Oyama, Noboru, Fumihiro Yoshimura, Takeo Ohsaka, Hiroshi Koezuka, and Torahiko Ando. "Characteristics of a Field-Effect Transistor Fabricated with Electropolymerized Thin Film." Japanese Journal of Applied Physics 27, Part 2, No. 3 (1988): L448—L450. http://dx.doi.org/10.1143/jjap.27.l448.

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25

Tsumura, A., H. Koezuka, and T. Ando. "Macromolecular electronic device: Field‐effect transistor with a polythiophene thin film." Applied Physics Letters 49, no. 18 (1986): 1210–12. http://dx.doi.org/10.1063/1.97417.

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26

Faughnan, Brian. "Subthreshold model of a polycrystalline silicon thin‐film field‐effect transistor." Applied Physics Letters 50, no. 5 (1987): 290–92. http://dx.doi.org/10.1063/1.98228.

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27

Su-Mei, Zhang, Shi Jia-Wei, Liu Ming-Da, Li Jing, Guo Shu-Xu, and Wang Wei. "Pentacene Organic-Thin-Film Field-Effect Transistors." Chinese Physics Letters 21, no. 1 (2004): 164–65. http://dx.doi.org/10.1088/0256-307x/21/1/049.

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28

Cui, Nan, Hang Ren, Qingxin Tang, et al. "Fully transparent conformal organic thin-film transistor array and its application as LED front driving." Nanoscale 10, no. 8 (2018): 3613–20. http://dx.doi.org/10.1039/c7nr09134f.

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29

Lim, Eunhee, Byung-Jun Jung, Hong-Ku Shim, et al. "Nanoscale thin-film morphologies and field-effect transistor behavior of oligothiophene derivatives." Organic Electronics 7, no. 3 (2006): 121–31. http://dx.doi.org/10.1016/j.orgel.2005.12.001.

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30

Pang, Lisa Y. S., Simon S. M. Chan, Paul R. Chalker, Colin Johnston, and Richard B. Jackman. "Thin film diamond metal-insulator field effect transistor for high temperature applications." Materials Science and Engineering: B 46, no. 1-3 (1997): 124–28. http://dx.doi.org/10.1016/s0921-5107(96)01946-0.

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31

Ma, William Cheng-Yu, Jia-Yi Wang, Li-Wei Yu, Hsiao-Chun Wang, and Yan-Jia Huang. "Temperature dependence improvement of polycrystalline-silicon tunnel field-effect thin-film transistor." Solid-State Electronics 160 (October 2019): 107621. http://dx.doi.org/10.1016/j.sse.2019.107621.

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32

Said, Elias, Xavier Crispin, Lars Herlogsson, Sami Elhag, Nathaniel D. Robinson, and Magnus Berggren. "Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film." Applied Physics Letters 89, no. 14 (2006): 143507. http://dx.doi.org/10.1063/1.2358315.

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33

Rashmi, V. R. Balakrishnan, Ashok K. Kapoor, et al. "Effect of field dependent trap occupancy on organic thin film transistor characteristics." Journal of Applied Physics 94, no. 8 (2003): 5302. http://dx.doi.org/10.1063/1.1602949.

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34

Kawasaki, Naoko, Yoshihiro Kubozono, Hideki Okamoto, Akihiko Fujiwara, and Minoru Yamaji. "Trap states and transport characteristics in picene thin film field-effect transistor." Applied Physics Letters 94, no. 4 (2009): 043310. http://dx.doi.org/10.1063/1.3076124.

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35

QIU, Yong. "Preparation and characteristics of flexible all-organic thin-film field-effect transistor." Chinese Science Bulletin 48, no. 15 (2003): 1554. http://dx.doi.org/10.1360/02wb0188.

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36

Kang, H. S., H. S. Kang, J. K. Lee, et al. "Humidity-dependent characteristics of thin film poly(3,4-ethylenedioxythiophene) field-effect transistor." Synthetic Metals 155, no. 1 (2005): 176–79. http://dx.doi.org/10.1016/j.synthmet.2005.07.337.

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37

Qiu, Yong, Yuanchuan Hu, Guifang Dong, Liduo Wang, Junfeng Xie, and Yaning Ma. "Preparation and characteristics of flexible all-organic thin-film field-effect transistor." Chinese Science Bulletin 48, no. 15 (2003): 1554–57. http://dx.doi.org/10.1007/bf03183959.

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38

Kim, Do Won, Hyeon Joong Kim, Changmin Lee, et al. "Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance." Electronics 10, no. 2 (2021): 200. http://dx.doi.org/10.3390/electronics10020200.

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Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased

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39

Pearton, Stephen J., Wan Tae Lim, Yu Lin Wang, et al. "Transparent Thin Film Transistors Based on InZnO for Flexible Electronics." Key Engineering Materials 380 (March 2008): 99–109. http://dx.doi.org/10.4028/www.scientific.net/kem.380.99.

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There is strong interest in new forms of transparent, flexible or wearable electronics using non-Si materials deposited at low temperature on cheap substrates. While Si-based thin film transistors (TFTs) are widely used in displays, there are some drawbacks such as light sensitivity and light degradation and low field effect mobility (<1 cm2/Vs). For example, virtually all liquid crystal displays (LCDs) use TFTs imbedded in the panel itself. One of the promising alternatives to use of Si TFTs involves amorphous or nanocrystalline n-type oxide semiconductors. For example, there have been pro

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40

Liu, Xi, Jacob Y. L. Ho, Man Wong, Hoi Sing Kwok, and Zhaojun Liu. "Synthesis, characterization and fabrication of ultrathin iron pyrite (FeS2) thin films and field-effect transistors." RSC Advances 6, no. 10 (2016): 8290–96. http://dx.doi.org/10.1039/c5ra23344e.

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We report the synthesis of an ultrathin FeS<sub>2</sub>thin filmviathermal sulfurization of an iron thin film. The FeS<sub>2</sub>based transistor not only broadens the applications of pyrite, but also provides a platform for investigating FeS<sub>2</sub>materials.

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41

Leonov, A. V., V. N. Murashev, D. N. Ivanov, and V. D. Kirilov. "Charge-coupling effect in a Hall field element based on thin-film SOI-MOS transistor." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 24, no. 1 (2021): 57–62. http://dx.doi.org/10.17073/1609-3577-2021-1-57-62.

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The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field senso

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42

Huang, Wei Lun, Chen-Chuan Yang, Sheng-Po Chang, and Shoou-Jinn Chang. "Photoresponses of Zinc Tin Oxide Thin-Film Transistor." Journal of Nanoscience and Nanotechnology 20, no. 3 (2020): 1704–8. http://dx.doi.org/10.1166/jnn.2020.17159.

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In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/

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43

Razak, A. A., W. H. Khoo, and Suhana Mohamed Sultan. "ZnO Thin Film Transistor: Effect of Traps and Grain Boundaries." ELEKTRIKA- Journal of Electrical Engineering 17, no. 1 (2018): 41–43. http://dx.doi.org/10.11113/elektrika.v17n1.9.

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Recently ZnO has drawn a lot of attention in semiconductor industry due to its interesting features. High exciton binding energy, high resistivity against radiation, high breakdown voltage, low temperature deposition are some of the interesting features of this material. Zinc oxide TFT device gains an increasing interest for its potential in sensing applications due to its biocompability, chemical stability and simple fabrication process with various methods and high surface-to-volume ratio. However, ZnO TFT devices from previous work exhibited poor ION and field effect mobility. This work inv

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44

Xie, Junan, Zhennan Zhu, Hong Tao, et al. "Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application." Coatings 10, no. 7 (2020): 698. http://dx.doi.org/10.3390/coatings10070698.

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The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO2 as well as optimizat

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45

Kwon, Hyunah, Hocheon Yoo, Masahiro Nakano, Kazuo Takimiya, Jae-Joon Kim, and Jong Kyu Kim. "Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors." RSC Advances 10, no. 4 (2020): 1910–16. http://dx.doi.org/10.1039/c9ra09195e.

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46

Ma, Hong Yu, En Jie Ding, and Zeng Liang Shi. "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes." Key Engineering Materials 480-481 (June 2011): 605–8. http://dx.doi.org/10.4028/www.scientific.net/kem.480-481.605.

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The fabrication of zinc oxide （ZnO）based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and

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47

XU, HONGGUANG, FENG RAN, YUAN JI, JIMEI ZHANG, and WENQING ZHU. "STUDY OF ORGANIC THIN FILM TRANSISTOR WITH PHOTOPATTERNED GATE DIELECTRIC." Modern Physics Letters B 26, no. 31 (2012): 1250204. http://dx.doi.org/10.1142/s0217984912502041.

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In order to investigate the feasibility of gating organic field-effect transistors (OFETs) using a photosensitive photoresist material, pentacene-based OFETs were fabricated on indium tin oxide (ITO) glass. The gate dielectric was found to be easily patterned by spin coating and UV exposure, and has an excellent surface roughness of 0.22 nm and good insulating properties, resulting in a low leakage current (49 nA at 2 MV/cm) at a dielectric thickness of 290 nm. The OFET with photopatterned gate dielectric exhibited good electric characteristics, including a high field-effect mobility of 0.15 c

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48

Yang, Gwangseok, Donghwan Kim, and Jihyun Kim. "Photosensitive cadmium telluride thin-film field-effect transistors." Optics Express 24, no. 4 (2016): 3607. http://dx.doi.org/10.1364/oe.24.003607.

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49

Kumashiro, Ryotaro, Katsumi Tanigaki, Hirotaka Ohashi, et al. "Azafullerene (C59N)2 thin-film field-effect transistors." Applied Physics Letters 84, no. 12 (2004): 2154–56. http://dx.doi.org/10.1063/1.1667013.

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50

Mereu, B., G. Sarau, E. Pentia, et al. "Field-effect transistor based on nanometric thin CdS films." Materials Science and Engineering: B 109, no. 1-3 (2004): 260–63. http://dx.doi.org/10.1016/j.mseb.2003.10.077.

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