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Journal articles on the topic 'Thin-film system'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Durisch, Wilhelm, and Bernd Bitnar. "Novel thin film thermophotovoltaic system." Solar Energy Materials and Solar Cells 94, no. 6 (2010): 960–65. http://dx.doi.org/10.1016/j.solmat.2010.01.024.

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2

Mohaisen, Hatem Kareem. "Thin Film Preparation of Silver Nanoparticle by Homemade Spray Pyrolysis System." Journal of Advanced Research in Dynamical and Control Systems 24, no. 4 (2020): 228–36. http://dx.doi.org/10.5373/jardcs/v12i4/20201437.

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3

Omiya, Masaki, and Ituo Nishiyama. "OS13-1-4 Evaluation of Thin Film Adhesion by Microcutting System." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2011.10 (2011): _OS13–1–4—. http://dx.doi.org/10.1299/jsmeatem.2011.10._os13-1-4-.

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4

Shang, Xiao Yan, Jun Han, and Ying Xiu Kun. "Compensation Research of the Thin Film Absorption in Thin-Film Thickness Wideband Monitoring System." Advanced Materials Research 268-270 (July 2011): 955–59. http://dx.doi.org/10.4028/www.scientific.net/amr.268-270.955.

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During the course of thin film deposition,the thin-film thickness wideband monitoring system is utilized,the correction of thickness monitoring depends on overlapping stage of the theoretical transmittance curve and the measured one. The absorption of thin-film material results in the measured spectrum curve deviation from the theoretical spectrum curve. A method in software brings forward, namely before the next layer will be deposited, its theoretical transmittance curve is corrected so that the absorption of layers which have been deposited has no effect on this layer, as such, the theoreti

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5

Shih-Chang Shei, Shih-Chang Shei, та Yichu Wang Shih-Chang Shei. "以三氧化二鋁為閘極絕緣層之銦鎵鋅氧薄膜電晶體之研究". 理工研究國際期刊 13, № 1 (2023): 1–10. http://dx.doi.org/10.53106/222344892023041301001.

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In this study focuses on the dielectric layer materials of thin film transistors (TFTs). Gate oxide was deposited using a RF Magnetron Sputtering control system. The first studied the aluminium oxide (Al2O3) dielectric layer material deposited with different oxygen flow and annealed by the furnace tube. The study found that the properties of aluminium oxide (Al2O3) thin film transistors (TFTs) after furnace tube annealing reduced the interface trap density and the roughness of the thin film after annealing. The above dielectric layer is used to make thin film transistors (TFTs) with a bottom g

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6

Raposo, Maria, and Paulo A. Ribeiro. "Thin Film-Based Sensors." Chemosensors 7, no. 3 (2019): 37. http://dx.doi.org/10.3390/chemosensors7030037.

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An increasing number of fields in everyday life require the development and application of ever more modern and efficient chemical sensors and biosensors, namely to be integrated in intelligent control system networks [...]

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7

Yang, Ban Quan, Xue Jun Chen, Wei Hai Sun, Hong Qian Chen, Jing Wen Pan, and Ying Chen. "Fracture Behavior of a Brittle Thin Film on an Elastic Substrate under Residual Stress and Uniaxial Tensile Loading." Applied Mechanics and Materials 190-191 (July 2012): 487–90. http://dx.doi.org/10.4028/www.scientific.net/amm.190-191.487.

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The fracture behavior of a brittle thin film on an elastic substrate under residual stress and uniaxial tensile loading is investigated. It is assumed that the residual stress in the thin film is not large enough to cause the thin film to fracture. Using a mechanical model presented in this work, the analytical solutions for the distribution laws of the tensile stress developed in the thin film, the shear stress developed along the interface and the relationship between the crack density of the thin film and the applied strain of the substrate can be obtained. The results presented in this wor

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8

Lin, Yu-Ming, Hung-Wei Wu, Cheng-Yuan Hung, Shoou-Jinn Chang, and Ran Liu. "Dual-Polarized Transparent Antenna and Its Application for Capsule Endoscopy System." Electronics 12, no. 14 (2023): 3124. http://dx.doi.org/10.3390/electronics12143124.

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In this paper, we proposed a small transparent thin film antenna for a wireless capsule endoscopy system. The transparent thin film antenna is needed to provide a clear 360° broad-sight view of the wireless capsule system in the future. Furthermore, the transparent thin film is critical for performing the dual-polarized antenna operating at 2.45 GHz. The proposed transparent thin film uses the nano-alignment process to further achieve low resistivity from 3.78 × 10−4 Ω-cm to 9.14 × 10−5 Ω-cm and improves the transparency by over 70%. The nano-alignment process includes periodic electrodes with

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9

Feng, X., Y. Huang, and A. J. Rosakis. "On the Stoney Formula for a Thin Film/Substrate System With Nonuniform Substrate Thickness." Journal of Applied Mechanics 74, no. 6 (2007): 1276–81. http://dx.doi.org/10.1115/1.2745392.

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Current methodologies used for the inference of thin film stress through system curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. Recently Huang, Rosakis, and co-workers [Acta Mech. Sinica, 21, pp. 362–370 (2005); J. Mech. Phys. Solids, 53, 2483–2500 (2005); Thin Solid Films, 515, pp. 2220–2229 (2006); J. Appl. Mech., in press; J. Mech. Mater. Struct., in press] established methods for the film/substrate system subject to nonuniform misfit strain and temperature changes. The film stresses wer

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10

Wang, H. L., M. J. Chiang, and M. H. Hon. "Determination of thin film hardness for a film/substrate system." Ceramics International 27, no. 4 (2001): 385–89. http://dx.doi.org/10.1016/s0272-8842(00)00092-4.

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11

Murakami, Hiroshi, Shunsuke Hosokawa, Isao Kudo, et al. "Microgravity annealing system for thin‐film superconductors." Review of Scientific Instruments 64, no. 6 (1993): 1536–40. http://dx.doi.org/10.1063/1.1144023.

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12

Miller, Arne, Peter Hargittai, and Andras Kovacs. "A PC based thin film dosimeter system." Radiation Physics and Chemistry 57, no. 3-6 (2000): 679–85. http://dx.doi.org/10.1016/s0969-806x(99)00507-1.

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13

Miller, A., W. Batsberg, and W. Karman. "A new radiochromic thin-film dosimeter system." International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry 31, no. 4-6 (1988): 491–96. http://dx.doi.org/10.1016/1359-0197(88)90216-0.

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14

Yang, Ban Quan, Jun Du, Xue Jun Chen, et al. "Effect of the Mechanical Properties and Geometric Parameters on the Crack Density of the Thin Film/Substrate System under Residual Stress and Uniaxial Tensile Loading." Applied Mechanics and Materials 470 (December 2013): 521–24. http://dx.doi.org/10.4028/www.scientific.net/amm.470.521.

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The effect of the mechanical properties and geometric parameters on the crack density of the thin film/substrate system under residual stress and uniaxial tensile loading is investigated in this work. The numerical results show that the crack density of the thin film increases with the increase of the Youngs modulus of the thin film and (or) the shear modules of the interface layer, and it decreases with the increase of the thickness of the thin film and (or) the fracture strength of the thin film. These results can help us more deeply understand the fracture behavior of the brittle thin film

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15

KAVAK, H., N. H. ERDOGAN, K. KARA, H. YANIS, Z. BAZ, and R. ESEN. "CHARACTERIZATION OF n AND p TYPE ZNO THIN FILMS DEPOSITED BY CATHODIC PULSED FILTERED VACUUM ARC SYSTEM." International Journal of Modern Physics B 23, no. 06n07 (2009): 1719–24. http://dx.doi.org/10.1142/s0217979209061524.

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The transparent, conductive n and p -type semiconducting ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. The structural, optical and electrical properties of n and p -type ZnO thin films are investigated after annealing at 450°C. 197 nm thick n -type ZnO thin film was deposited with oxygen pressure of 8.5 × 10-4 Torr . XRD pattern of annealed ZnO thin film exhibits hexagonal structure with (100), (101) and (110) orientations. The crystallite size of semiconductor ZnO thin film is 18 nm, interplanar distance 0.16 nm and lattice constant c is 0.52

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16

Todorović, D. M., M. D. Rabasović, D. D. Markushev, and M. Sarajlić. "Photoacoustic elastic bending in thin film–substrate system: Experimental determination of the thin film parameters." Journal of Applied Physics 116, no. 5 (2014): 053506. http://dx.doi.org/10.1063/1.4890346.

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17

Wang, Jianfeng. "Electronic structure of gadolinium-doped ceria system: A DFT study." Modern Physics Letters B 33, no. 08 (2019): 1950095. http://dx.doi.org/10.1142/s0217984919500957.

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We have performed a density functional theory (DFT) study of the electronic structure in ceria [Formula: see text] and gadolinium-doped ceria (GDC) system using VASP code in the generalized gradient approximation (GGA) with DFT[Formula: see text]+[Formula: see text]U. The band structures in GDC and thin film GDC are calculated and compared to that of bulk ceria. Doping of gadolinium significantly decreases the band gap of ceria, while the thin film structure of GDC raises the band gap greatly. The results help explain the electronic conductivity behavior of GDC and suggest that thin film-struc

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18

MOON, SEUNG-HYUN, HAN-KI YOON, RI-ICHI MURAKAMI, TAE-GYU KIM, SEUNG-YON CHO, and IN-KYUN YU. "THE EFFECTS ON HEAT TREATMENT OF SIC COATED / GRAPHITE PLATE BY RF SPUTTERING SYSTEM." International Journal of Modern Physics: Conference Series 06 (January 2012): 757–61. http://dx.doi.org/10.1142/s2010194512004102.

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Silicon carbide film was coated by RF sputtering system onto graphite plate substrate. Surface roughness of substrate was polished by wet polishing with sand paper, number of 3000. RF power was 200 W in 0.4 Pa of argon gas. Deposition holding time was 3hours in 600 °C temperature. Specimens were heat treated by 1200, 1400 and 1500 °C for 1 hour to research the effect of heat treatment on SiC coating layer. Atomic Force Microscope (AFM) was used to characterize the surface morphology and the Sq surface roughness. AFM was used to investigate the grain size and roughness of the surface of thin co

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19

Md Sin, Nor Diyana, Mohamed Zahidi Musa, Mohamad Hafiz Mamat, S. Ahmad, A. Abdul Aziz, and Mohamad Rusop Mahmood. "Zinc Oxide Buffer Layer Insertion for Sensitivity Improvement in Aluminium-Doped Zinc Oxide-Based Humidity Sensors." Advanced Materials Research 667 (March 2013): 287–93. http://dx.doi.org/10.4028/www.scientific.net/amr.667.287.

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The improvement of sensitivity toward humidity by insertion of buffer layer has been investigated. The insertion of hetero- or homo-buffer layer of zinc oxide (ZnO) thin film before deposition of high quality ZnO had been reported for the growth on highly mismatched substrate. Three samples are characterized with different properties which are as deposited ZnO thin film without buffer layer (as deposited ZnO thin film) , anneal ZnO thin film without buffer layer (ZnO thin film) and anneal ZnO thin film with buffer layer (ZnO/ AZO thin film). The structural properties of ZnO thin film has been

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20

TSUKIOKA, MASAYUKI, TASUKU MASHIO, MASAJI SHIMAZU, and TAKESHI NAKAMURA. "PREFERABLE ORIENTATION OF CRYSTALLINE THIN-FILM OF MODIFIED BNN SYSTEM." Modern Physics Letters B 03, no. 06 (1989): 465–70. http://dx.doi.org/10.1142/s021798498900073x.

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Using rf-sputtering method, modified BNN ( Ba 2 NaNb 5 O 15) thin-films, which are highly aligned, were prepared on a polished surface of a stainless steel plate and on a polished silicon wafer. It was found that preferably aligned thin-films were successfully obtained only when modified Nb-rich BNN target was used. Preferable orientation of these thin-films was confirmed by X-ray diffraction measurement. In order to find the correlation between preferable orientation and separation from plasma center, X-ray measurement was carried out at several points on the thin-film sputtered on a long sta

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21

Kadhim, Murad M., and Qusay A. Abbas. "Bohm Diffusion in Magnetron Sputtering System: A Review Article." Iraqi Journal of Industrial Research 11, no. 3 (2024): 55–68. https://doi.org/10.53523/ijoirvol11i3id462.

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This review provides a comprehensive analysis of recent advances in understanding Bohm diffusion in magnetron sputtering systems, a process critical for optimizing thin-film deposition. Bohm diffusion significantly influences the spatial distribution and energy of sputtered particles near the substrate, impacting the overall film quality and performance. The review delves into theoretical models, experimental findings, and computational simulations to uncover the mechanisms driving Bohm diffusion within the plasma sheath. Key factors, such as magnetic field strength, gas pressure, target-to-su

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22

Meyer-Kornblum, Eike, Saskia Biehl, Nancy Paetsch, and Günter Bräuer. "Investigation of Application-Specific Thin Film Sensor Systems with Wireless Data Transmission System." Proceedings 2, no. 13 (2018): 919. http://dx.doi.org/10.3390/proceedings2130919.

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23

Biehl, Saskia, Christian Rumposch, Nancy Paetsch, et al. "Multifunctional thin film sensor system as monitoring system in production." Microsystem Technologies 22, no. 7 (2016): 1757–65. http://dx.doi.org/10.1007/s00542-016-2831-5.

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24

Liu, Weidong, Liangchi Zhang та Alireza Moridi. "Finite Element Analysis of the 3ω Method for Characterising High Thermal Conductivity Ultra-Thin Film/Substrate System". Coatings 9, № 2 (2019): 87. http://dx.doi.org/10.3390/coatings9020087.

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The 3ω method is an attractive technique for measuring the thermal conductivity of materials; but it cannot characterise high thermal conductivity ultra-thin film/substrate systems because of the deep heat penetration depth. Recently, a modified 3ω method with a nano-strip was specifically developed for high thermal conductivity thin film systems. This paper aims to evaluate the applicability of this method with the aid of the finite element analysis. To this end, a numerical platform of the modified 3ω method was established and applied to a bulk silicon and an AlN thin-film/Si substrate syst

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25

TSUKIOKA, MASAYUKI, TASUKU MASHIO, MASAJI SHIMAZU, and TAKESHI NAKAMURA. "FILM FABRICATION AND OPTICAL PROPERTIES OF AMORPHOUS THIN-FILM OF MODIFIED BNN (Ba2NaNb5O15) SYSTEM." Modern Physics Letters B 03, no. 05 (1989): 387–92. http://dx.doi.org/10.1142/s0217984989000625.

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For the first step of making highly aligned BNN thin-film, transparent and colorless amorphous thin-films of modified BNN system were successfully prepared either on silicon oxide layer formed on (111) plane of a polished silicon wafer of 500×0.3 mm or on polished glass ceramic plate of 50×50 mm by rf-sputtering technique. Sputtering targets, whose chemical composition was proposed by K.G. Barraclough as the congruently melting one, were used. Refractive indices and thickness of the films at several positions on these thin-films were measured by prism-coupling technique, and they were about 2.

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26

R., K. Pathak, Sharma P., Sankwa Sandhya, and Yadav J. "Electrosynthesis and characterisation of CdSeHgTI thin films." Journal of Indian Chemical Society Vol. 84, May 2007 (2007): 407–10. https://doi.org/10.5281/zenodo.5819433.

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Department of Chemistry, Govt. Holkar Science College, Indore-452 001, Madhya Pradesh, India Jawaharlal Institute of Technology, Bora wan, Khargone, Madhya Pradesh, India <em>Manuscript received 3 July 2006, revised 6 March 2007, accepted 14 March 2007</em> Thallium containing CdSeHg films have been electrosynthesised at -0.600 V vs SCE on titanium substrate from the aqueous solution. Electrochemical properties of the films were investigated in 1<sub>2</sub>/I-redox solution. Films were found to be <em>p</em>-type conductor with charge carrier level 10<sup>25</sup>• The carrier concentrat

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27

Kyu An, Tae, So-Min Park, Sooji Nam, et al. "Thin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistors." Science of Advanced Materials 5, no. 9 (2013): 1323–27. http://dx.doi.org/10.1166/sam.2013.1566.

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28

Jia, Dan Ping, Yang Wang, Song Lin, and Quan Kang Wei. "Research of DC Current Measurement Technology Based on Optical Fiber Thermometry." Applied Mechanics and Materials 128-129 (October 2011): 686–89. http://dx.doi.org/10.4028/www.scientific.net/amm.128-129.686.

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Thin film sensor has the advantages of small size and low cost, which has become a research hotspot in recent years. A measurement system of passive optical fiber DC current sensor based on the thin film sensors is designed in this article. Designs of electric-heating converter, heating-light converter and low-voltage measurement display system are introduced in detail. Experimental results indicate that the general linear correlation between the time constant of fluorescent lifetime and the voltage across the thin film resistor. The feasibility of measurement system is verified via the result

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29

Zhang, Zhenxue, Mikdat Gurtaran, Xiaoying Li, and Hanshan Dong. "P-Type BiSb₂Te₃ thin film thermoelectric module fabricated on a flexible substrate through magnetron sputtering." MATEC Web of Conferences 401 (2024): 09004. http://dx.doi.org/10.1051/matecconf/202440109004.

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In this work, we deposited P-type BiSb2Te3-based thin films utilizing magnetron sputtering. After characterisations of their morphology and microstructure, a special in-plane advanced test system was used to simultaneously measure the thermal conductivity, electrical conductivity, and Seebeck coefficient of the thin film. The figure of merit of the thin film can then be calculated. We produced a prototype of a thin-film module based on P-type BiSb2Te3 on Kapton HN polyimide foil Kapton substrate with two different designs. The open-circuit voltage, electric current and electrical resistance of

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30

ASAI, Shigemi, Yoshiyuki YOKOMACHI, Hiroshi KYOTANI, and Takeshi NAITOH. "Precision grinding system of thin film magnetic head." Journal of the Japan Society for Precision Engineering 52, no. 3 (1986): 560–65. http://dx.doi.org/10.2493/jjspe.52.560.

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31

Diana, T. "Interfacial Mixing In Te/Bi Thin Film System." Advanced Materials Letters 5, no. 4 (2014): 223–28. http://dx.doi.org/10.5185/amlett.2013.7510.

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32

Todorović, D. M., M. D. Rabasović, and D. D. Markushev. "Photoacoustic elastic bending in thin film—Substrate system." Journal of Applied Physics 114, no. 21 (2013): 213510. http://dx.doi.org/10.1063/1.4839835.

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33

Kim, Kyung Hwan, In Hwan Son, Ki Bong Song, et al. "Thin film properties by facing targets sputtering system." Applied Surface Science 169-170 (January 2001): 410–14. http://dx.doi.org/10.1016/s0169-4332(00)00694-2.

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34

Sukumar, Vinesh, Mahmoud Alahmad, Kevin Buck, et al. "Switch array system for thin film lithium microbatteries." Journal of Power Sources 136, no. 2 (2004): 401–7. http://dx.doi.org/10.1016/j.jpowsour.2004.03.033.

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35

Jongill Hong, E. Kay, and S. X. Wang. "Granular magnetic cobalt metal/polymer thin film system." IEEE Transactions on Magnetics 32, no. 5 (1996): 4475–77. http://dx.doi.org/10.1109/20.538902.

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36

Saitoh, S., E. Kita, M. Takao, and A. Tasaki. "Magnetic Properties of Insoluble Binary System Thin Film." IEEE Translation Journal on Magnetics in Japan 1, no. 9 (1985): 1095–96. http://dx.doi.org/10.1109/tjmj.1985.4549081.

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37

Porada, Z., E. Schabowska-Osiowska, and T. Kenig. "PC-EL Type Thin Film Optoelectronic Memory System." Active and Passive Electronic Components 14, no. 4 (1992): 181–90. http://dx.doi.org/10.1155/1992/97872.

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38

Miller, Chris, Nathaniel Wright, and Otto J. Gregory. "Extension wire system for thin film ceramic thermocouples." Sensors and Actuators A: Physical 386 (May 2025): 116343. https://doi.org/10.1016/j.sna.2025.116343.

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39

Okamoto, Yoichi, Masami Aono, Hisashi Miyazaki, Yudai Ogata, Makoto Tokuda, and Tamotsu Mashimo. "Crystallization and Reconstructive Layer Transformation of a-Si/Au Multilayer Thin Films under a Strong Gravitational Field." Defect and Diffusion Forum 363 (May 2015): 156–63. http://dx.doi.org/10.4028/www.scientific.net/ddf.363.156.

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There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/

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40

Adelberg, Jeffrey, and Joe Toler. "Comparison of Agar and an Agitated, Thin-film, Liquid System for Micropropagation of Ornamental Elephant Ears." HortScience 39, no. 5 (2004): 1088–92. http://dx.doi.org/10.21273/hortsci.39.5.1088.

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Micropropagation of black-stemmed elephant ear (C. esculenta (L.) Schott `Fontanesii')' and upright elephant ear (A. macrorrhizos G. Don) were compared in semi-solid agar media and agitated, liquid thin-film bioreactor vessels at four explant densities (33, 100, 165, and 330 explants/L of media) using two growth regulator combinations: 1) 1 μm benzylaminopurine (BA)—growth medium, and 2) 3 μm BA plus 3 μm ancymidol—multiplication medium. The thin-film liquid system outperformed agar culture for most measured responses. Some exceptions were relative dry weights at higher explant densities and m

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41

Dong, Suotao, Xiuhua Fu, and Cheng Li. "Noble Infrared Optical Thickness Monitoring System Based on the Algorithm of Phase-Locked Output Current–Reflectivity Coefficient." Coatings 12, no. 6 (2022): 782. http://dx.doi.org/10.3390/coatings12060782.

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With the rapid development of modern science and technology, the application of infrared (IR) optical thin films is increasingly widespread, including in aerospace, autonomous driving, military development, and the fight against Coronavirus Disease 2019 (COVID-19), in which thin film devices play an important role. Similarly, with the improvement of user requirements, the precision requirements for the preparation of optical films are also developing and improving. In this paper, the IR optical thickness monitoring system is studied with the noble algorithm introducing the phase-locked amplifi

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42

Makogon, Yu N., O. P. Pavlova, Sergey I. Sidorenko, G. Beddies, and A. V. Mogilatenko. "Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems." Defect and Diffusion Forum 264 (April 2007): 159–62. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.159.

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-

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43

Mohammed, Wlla M. "Study of the electrical properties of the thin film (SnO2 )1-X(Bi2O3)X Preparation by Vacuum evaporation system." Tikrit Journal of Pure Science 24, no. 2 (2019): 84. http://dx.doi.org/10.25130/j.v24i2.806.

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In this study, bismuth element was added to the weight ratio of (0,1,3,5)% to tin element using powdered technology method. The thin film of (SnO2)1-X(Bi2O3)X have been prepared with a vacuum evaporation system and oxidized him in oven with temperature at 350° C for 30 min. Results (I-V) Characters with temperature showed that the thin film had a negative thermal resistance factor, while the results showed that the resistance value of the thin film increased from 1KΩ at (0%) to 7.5 KΩ at (5%). The thin film 's sensitivity to heat has also improved significantly. The energy activation decreased

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44

Wlla M. Mohammed. "Study of the electrical properties of the thin film (SnO2 )1-X(Bi2O3)X Preparation by Vacuum evaporation system." Tikrit Journal of Pure Science 24, no. 2 (2019): 84–87. http://dx.doi.org/10.25130/tjps.v24i2.357.

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In this study, bismuth element was added to the weight ratio of (0,1,3,5)% to tin element using powdered technology method. The thin film of (SnO2)1-X(Bi2O3)X have been prepared with a vacuum evaporation system and oxidized him in oven with temperature at 350° C for 30 min. Results (I-V) Characters with temperature showed that the thin film had a negative thermal resistance factor, while the results showed that the resistance value of the thin film increased from 1KΩ at (0%) to 7.5 KΩ at (5%). The thin film 's sensitivity to heat has also improved significantly. The energy activation decreased

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45

Liu, Deliang, Shuhua Cao, and Jiujun Xu. "Experimental research and numerical analysis in thin film lubrication of point contact." Industrial Lubrication and Tribology 67, no. 3 (2015): 197–201. http://dx.doi.org/10.1108/ilt-01-2013-0006.

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Purpose – The purpose of this paper is to establish a rapid and effective numerical model of thin film lubrication with clear physical conception, in which viscosity variation along the direction of film thickness was used instead of average viscosity, and continuous Reynolds equation was used in the calculation of thin film lubrication. Design/methodology/approach – Based on rheology and thin film lubrication with point contact and considering features of shear thinning and like-solidification of lubricant oil in the thin film lubrication state, a modified formula with overall average equival

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Domanowski, Piotr, Sławomir Bujnowski, Tomasz Marciniak, and Zbigniew Lutowski. "Prototype System for Plasma Film Surface Modification." Solid State Phenomena 223 (November 2014): 146–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.223.146.

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The paper presents a prototype system for modifying surface of a film that can be used in various industries. System allows for two-sided modification of the surface of the film under reduced pressure with a low temperature plasma use. During the surface treatment process, it is possible to dispense chemicals into vacuum chamber in gaseous form, which can create a thin coating on the surface of the film. The system enables the film modification process parameterization while monitoring its key parameters.

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Sánchez-Arriaga, Néstor Eduardo, Divya Tiwari, Windo Hutabarat, Adrian Leyland, and Ashutosh Tiwari. "A Spectroscopic Reflectance-Based Low-Cost Thickness Measurement System for Thin Films: Development and Testing." Sensors 23, no. 11 (2023): 5326. http://dx.doi.org/10.3390/s23115326.

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The requirement for alternatives in roll-to-roll (R2R) processing to expand thin film inspection in wider substrates at lower costs and reduced dimensions, and the need to enable newer control feedback options for these types of processes, represents an opportunity to explore the applicability of newer reduced-size spectrometers sensors. This paper presents the hardware and software development of a novel low-cost spectroscopic reflectance system using two state-of-the-art sensors for thin film thickness measurements. The parameters to enable the thin film measurements using the proposed syste

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Chen, Ruei-Tang, and Fong-Long Wu. "Facial Recognition Method Based on Thin-Film Solar Cells." Applied Sciences 12, no. 3 (2022): 1157. http://dx.doi.org/10.3390/app12031157.

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In this study, we developed a new facial recognition system using thin-film solar cells as sensors. When the face of a user is illuminated by LED lights on the left and right sides of the system and the reflected light enters the cells at the corresponding positions, differences in facial skin colors and 3D contours lead to different output voltages and currents of the thin-film solar cells. This is the basis of facial feature identification. We found that the accuracy of thin-film-solar-cell-based facial recognition can be improved by precisely controlling changes in LED light intensity. The

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Susila, Anggara Budi, Erfan Handoko, Esmar Budi, and Agus Setyo Budi. "Influence of thickness on heat treatment from 300 to 1100 K of aluminum thin film." Journal of Physics: Conference Series 2193, no. 1 (2022): 012028. http://dx.doi.org/10.1088/1742-6596/2193/1/012028.

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Abstract We investigated the influence of Aluminum thin film thickness during heat treatment. The films with thickness of 5 nm, 10 nm and 15 nm were heated from room temperature up to above melting point with same heating rate. Molecular Dynamics (MD) simulation is employed to study the behaviour of the thin film where the atoms were followed based on its trajectories. Thin film thickness gives significance contribution to the mechanism of the melting. Smaller thickness suffered strong pressure oscillation while the thin film temperature is increases. Local crystal structure confirmed the tran

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Pang, M., and D. F. Bahr. "Thin-film fracture during nanoindentation of a titanium oxide film–titanium system." Journal of Materials Research 16, no. 9 (2001): 2634–43. http://dx.doi.org/10.1557/jmr.2001.0362.

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Nanoindentation testing of the titanium oxide/titanium system with electrochemically grown oxide films exhibits permanent deformation prior to a yield excusion, indicating that the occurrence of this suddent discontinuity is predominantly controlled by oxide film cracking rather than dislocaton nucleation and multiplication. Observations of circumferential cracking also lend support to this explanation. A model has been developed to predict the mechanical response prior to oxide fracture for the case of a hard coating on a soft substrate. During loading contact, the hard coating undergoes elas

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