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Dissertations / Theses on the topic 'Thin film transistors Organic thin films'

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Published: 4 June 2021
Last updated: 8 February 2022

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1

Zhu, Wen Wei. "Organic thin film transistors." Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19597.

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Organic thin film transistors (OTFTs) have been fabricated using four different semiconducting polymers: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), polyhedral oligomeric silsesquioxanes (POSS) poly (2-methoxy-5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene) (MEH-PPV-POSS), poly[N-(3-methylphenyl)-N,N-diphenylamine-4,4'-diyl] (poly-TPD), and polyhedral oligomeric silsesquioxanes (POSS) poly (N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD-POSS). These OTFTs were fabricated on heavily doped «-type silicon wafers with thermally grown silicon dioxide layer was
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2

Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced th
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3

Stott, J. E. "Organic thin film transistors : integration challenges." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1393282/.

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This thesis considers some of the requirements and challenges in the eld of organic thin lm transistors (OTFTs), from the standpoint of large scale integration using low temperature plastic compatible processes. A combination of processes and materials for use in the fabrication of OTFTs is developed, yielding device performance comparable with the state of the art for bottom-contact, bottom-gate, organic small molecule thin lm transistors. High quality silicon nitride (SiNx) gate dielectric material is developed using plasma enhanced chemical vapour deposition (PECVD) at a low temperature (15
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4

Herlogsson, Lars. "Electrolyte-Gated Organic Thin-Film Transistors." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-69636.

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There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at lo
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5

Zocco, Adam T. "Pentacene-based Organic Thin-film Transistors on Paper." University of Cincinnati / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1382950881.

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6

Roberson, Luke Bennett. "Understanding organic thin film properties for microelectronic organic field-effect transistors and solar cells." Diss., Available online, Georgia Institute of Technology, 2005, 2005. http://etd.gatech.edu/theses/available/etd-11072005-111532/.

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Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2006.<br>Mohan Srinivasarao, Committee Member ; David Collard, Committee Member ; Uwe Bunz, Committee Member ; Art Janata, Committee Member ; Marcus Weck, Committee Member ; Laren Tolbert, Committee Chair.
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7

Chen, Yi. "Organic thin film transistors with mono-crystalline rubrene films by horizontal hot wall deposition." Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=66699.

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As promising candidates for future low-cost and flexible display applications, organic thin film transistors (OTFTs) have attracted considerable research interests for the past two decades. Recent advances in organic semiconductor theory and organic film growth/deposition techniques have resulted in OTFTs based on single crystalline organic films with performance approaching or even exceeding the present day's dominant amorphous silicon TFT technology. In this work, efforts have been made to explore suitable methods for the fabrication of thin film transistors based on high m
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8

Deng, Linfeng, and 邓林峰. "A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47244513.

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Compared with its inorganic counterpart, organic thin-film transistor (OTFT) has advantages such as low-temperature fabrication, adaptability to large-area flexible substrate, and low cost. However, they usually need high operating voltage and thus are not suitable for portable applications. Although reducing their gate–dielectric thickness can lower the operating voltage, it increases their gate leakage. A better way is making use of high-κ gate dielectric, which is the main theme of this research. Firstly, pentacene OTFTs with HfO2 gate dielectric nitrided in N2O or NH3 at 200 oC were stu
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9

Kim, Jungbae. "Organic-inorganic hybrid thin film transistors and electronic circuits." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34683.

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Thin-film transistors (TFTs) capable of low-voltage and high-frequency operation will be required to reduce the power consumption of next generation electronic devices driven by microelectronic components such as inverters, ring oscillators, and backplane circuits for mobile displays. To produce high performance TFTs, transparent oxide-semiconductors are becoming an attractive alternative to hydrogenated amorphous silicon (a-Si:H)- and organic-based materials because of their high electron mobility vlaues and low processing temperatures, making them compatible with flexible substrates and open
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10

Chen, Yi 1974. "Organic thin film transistors based on conjugated polymers." Thesis, McGill University, 2004. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=81533.

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Thin film transistors with different polymers (PTFTs) as active channel layers have been fabricated and studied in this work. Three different fabrication procedures were used to fabricate long and short channel PTFTs on silicon substrates and long channel PTFTs on glass substrates. It has been shown that the success rate of fabrication of PTFTs on glass substrates with anodic Al 2O3 gate dielectrics is higher than that on silicon substrates with thermally grown SiO2 gate dielectrics.<br>The characteristics of PTFTs fabricated using several polymers were studied. Among them, the ones bas
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11

Hong, Y. "Characterization and modelling of organic thin film transistors." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604202.

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This dissertation addresses, through experiments and modelling, three important aspects of organic thin-film transistor (OTFT) device physics, namely: mechanisms of gate dielectric bias stress instabilities; correlation of transfer characteristics and pseudogap density of states of the organic semiconductor; mechanisms of source and drain contact resistance. Bias stress effects were investigated for two organic insulators (OI), PVP and PMMA, by employing a Si-SiO<sub>2</sub>-OI-metal capacitor structures. In the cross-linked poly(-vinylphenol) (PVP), it is found that the bias stress effect res
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12

Xu, Wenwei. "Carrier transport characterization and thin film transistor applications of amorphous organic electronic materials." HKBU Institutional Repository, 2013. http://repository.hkbu.edu.hk/etd_ra/1542.

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13

Jiang, Chen. "All-inkjet-printed low-voltage organic thin-film transistors." Thesis, University of Cambridge, 2019. https://www.repository.cam.ac.uk/handle/1810/285012.

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This thesis presents the development of all-inkjet-printed low-voltage organic thin-film transistors. Organic thin-film transistors (OTFTs), taking advantage of low-temperature printability, mechanical flexibility, and multi-functionality, are promising for a wide range of emerging applications such as wearable electronics. Printed OTFTs provide great benefits in fabrication cost reduction, but they need a very high operating voltage and exhibit severe instability during storage and operation in ambient environment. In this study, all-inkjet-printed OTFTs with a low operating voltage of less t
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14

Ding, Ziqian. "Large area vacuum fabrication of organic thin-film transistors." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:e7decca4-14e3-47e7-85ca-0bb14755f282.

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A process has been developed to make the dielectric layer for organic thin-film transistors (OTFTs) in a roll-to-roll vacuum web coater environment. This dielectric layer combined with an organic semiconductor layer and metal layer deposited in vacuum allows a solvent-free process to make organic/inorganic multilayer structures for thin-film electronic devices on a flexible substrate at, potentially, high speed. The polymeric gate dielectric layers were fabricated by flash evaporation of acrylic monomers onto a polymer film with pre-patterned metal gates followed by radiation curing by electro
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15

Kwan, Man-chi. "Mobility enhancement for organic thin-film transistors using nitridation method." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37181580.

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16

Kwan, Man-chi, and 關敏志. "Mobility enhancement for organic thin-film transistors using nitridation method." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37181580.

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17

Ryu, Kyungbum. "The bias-stress effect in pentacene organic thin-film transistors." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/58176.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>Organic thin-film transistors (OTFTs) are promising for flexible large-area electronics. However, the bias-stress effect (BSE) in OTFTs causes operational instability that limits the usefulness of the OTFT technology in a wide range of circuit applications. Currently, most existing studies on OTFT BSE are inadequate because of one or more of the following reasons. First, they study the BSE on OTFT
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18

Sit, Jon Wai Yu. "Growth and characterization of organic/inorganic thin films for photonic device applications." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/179.

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Thin film transistors (TFTs) can be used to determine the bulk-like mobilities of amorphous semiconductors. Different organic hole transporters (HTs) are under investigation including spiro-TPD, 2TNATA, NPB and TPD which are commonly used in organic light-emitting diodes (OLEDs). In addition, we also measure the TFT hole mobilities of two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These materials were grown on two different gate dielectric surfaces which were SiO2 and polystyrene (PS). On SiO2, the TFT mobilities are found to be 1-2 orders smaller than the bulk hole mobilities as evaluated inde
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19

Chow, Chi Mei. "Effects of surface modification on metal-phthalocyanines based organic thin film transistors." HKBU Institutional Repository, 2010. http://repository.hkbu.edu.hk/etd_ra/1152.

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20

Park, Jeongwon. "Electronic properties of organic thin film transistors with nanoscale tapered electrodes." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2008. http://wwwlib.umi.com/cr/ucsd/fullcit?p3316420.

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Thesis (Ph. D.)--University of California, San Diego, 2008.<br>Title from first page of PDF file (viewed September 4, 2008). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 77-82).
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21

Hsieh, Chien-Wen. "Formation of composite organic thin film transistors with one-dimensional nanomaterials." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609276.

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22

Natsume, Yutaka. "Studies on Structures and Electronic Properties of Organic Thin Film Transistors." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/85402.

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23

Reig, Canyelles Marta. "Carbazole-Based Materials for Organic Thin-Film Transistors and Organic Light-Emitting Diodes." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/404560.

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This thesis deals with the preparation and characterization of novel organic semiconductors based on the carbazole heterocycle for electronic and optoelectronic applications, specifically to be studied as active layers in OTFTs and as emitting layers in OLEDs. Carbazole-based materials are recognised for their high thermal stability, high emission efficiencies and excellent hole-transporting properties associated to its electron-donating ability, which make of them promising candidates for OTFTs and OLEDs applications. OLEDs have been studied extensively due to their promising applications i
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24

Cheung, Chi Hang. "Charge injection, transport and thin film transistor applications of phenylamine-based organic semiconductors." HKBU Institutional Repository, 2009. http://repository.hkbu.edu.hk/etd_ra/1085.

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25

CHIU, YI-HSUN, and 邱奕勳. "Application of High Dielectric Hybrid Thin Films in Organic Thin Film Transistors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/76348811197882023705.

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碩士<br>明志科技大學<br>材料工程系碩士班<br>105<br>Organic thin film transistors (OTFTs) based on pentacene and hydroxyl-containing polyimide(PI)-SiO2-TiO2 hybrid films were fabricated on silicon substrate as the semiconductor and the gate dielectrics, respectively.The precursor was used to synthesize nano-sized SiO2-TiO2 colloid through the hydrolysis and condensation reaction in a sol-gel process. Then, PI-SiO2-TiO2 hybrid solution was synthesized from a condensation reaction between hydroxyl-containing SiO2-TiO2 and polyimide, followed by a spin coating to form the PI- SiO2-TiO2 dielectric composites. Cycl
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26

Cobb, Brian Hardy 1982. "Dynamic response of polycrystalline organic thin film transistors." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-794.

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In this dissertation, charge transport through organic field effect transistors is explored. In particular, small molecule-based devices consisting of Pentacene semiconducting thin films are investigated. The relationship between electric field and carrier velocity is explored over a wide range of electric fields. These velocities are then compared to directly measured velocities measured from transient measurements. New device structures are fabricated in order to provide low voltage operation, along with a method to stabilize the output response and reduce bias stress effects. A novel method
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27

Tsai, Li-Shiuan, and 蔡立軒. "Nitrogen incorporated Hafnium Dioxide dielectric thin film For Organic Thin Film Transistors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/05427454364168925544.

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碩士<br>國立清華大學<br>材料科學工程學系<br>97<br>Hafnium oxide is a high-k dielectric material which have dielectric constant of 25,high-k dielectric material use to be a gate oxide can decrease the threshold voltage and device scale for low voltage and microelectronics. Organic thin film transistors has been used to fabricate soft electronics devices. The active layers for OTFTs is numerous, pentacene for our research is one of most used OTFTs active layers. In this thesis, we fabricate the HfO2 and HfON thin film by RF Reactive Magnetron Sputter System. The target is Hf metal for 99.99%, and we use Mass
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28

Dickey, Kimberly Christine. "Developing non-invasive processing methodologies and understanding the materials properties of solution-processable organic semiconductors for organic electronics." Thesis, 2007. http://hdl.handle.net/2152/3108.

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29

Dickey, Kimberly Christine 1977. "Developing non-invasive processing methodologies and understanding the materials properties of solution-processable organic semiconductors for organic electronics." 2007. http://hdl.handle.net/2152/13293.

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30

Tsai, Ming-Ying, and 蔡明穎. "Thermal oxidation preparation of SiO2 films for fabrication of organic thin film transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/23528130466583707854.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>99<br>A SiO2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer of pentacene thin film transistor. By fixing thermal oxidation time at 3hr and changing oxygen flow at 0.10 SCCM (sample A), 0.20 SCCM (sample B), and 0.35 SCCM (sample C) as well as fixing oxygen flow rate at 0.35 SCCM and changing thermal oxidation time at 3 hr (sample C), 6hr (sample D), and 9 hr (sample E) as experimental parameters. It is shown the relationship between the flow of oxygen, thermal oxidation time, the thickness of silicon oxide a
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31

Huang, Yu-Jen, and 黃昱仁. "Air-stable Ambipolar Organic Thin-Film Transistors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/99446356586263355691.

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碩士<br>國立交通大學<br>顯示科技研究所<br>96<br>Air-stable ambipolar organic thin-film transistors (OTFT) based on the double active layer of pentacene / PTCDI-C8 have been made. Because the n-channel performance is easily affected by water and oxygen, the device on SiO2 can only exhibited ambipolar OTFT properties in inert conditions. However, after modification of the surface of the SiO2 by polymers, the device exhibited ambipolar characteristics under ambient conditions. The ambipolar OTFT still work after 40 days in the air. According to the experiments, we infer that hydroxyl groups on dielectric have a
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32

Chuang, Yen-yu, and 莊儼郁. "Room-Temperature Processed Organic Thin Film Transistors." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/75228396293886924094.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>90<br>OTFTs based on conjugated polymer, oligomers, or fused aromatics have been envisioned as a viable alternative to the traditional thin-film transistors (TFTs) based on inorganic materials. The unique processing characteristics and demonstrated performance of OTFTs suggest that they may be competitive candidates for existing or novel TFT applications requiring large area coverage, structural flexibility, low temperature processing, and low cost. In this thesis, room-temperature processed pentacene organic thin film transistors have been successfully
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33

chuan, Yu chih, and 游智全. "Process Investigation of Organic Thin Film Transistors." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/52536539662136785614.

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碩士<br>長庚大學<br>光電工程研究所<br>92<br>Organic thin film transistors competitive for applications requiring fabricated on large area coverage and flexible electronic , such as commercial flexible poster、recognizing 、system、sensor、E- Paper. We report on the searches of organic thin film transistors fabrication in our thesis. we will excepted useful for developing of organic transistors. Our investigation has two key point mainly: (1)The paper hopes to use the high electric coefficient materials : Al 2O3 and HfO2 increase accumulated the electric charge to reduce the voltage of operating by m
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34

Yeh, Chia-Ming, and 葉佳明. "Synthesis of Soluble Organic Thin film transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/40109234357727157180.

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碩士<br>國立中央大學<br>化學研究所<br>99<br>Asymmetric fused thiophene compound (11) was synthesized by “one-pot” reaction. Based on compound (11), derivatives (1) and (2) have been developed. Both compounds exhibit p-type field-effect performances with mobility of 0.026 and 9x10-4 cm2/Vs via vacuum evaporation, respectively. Compounds (3) ~ (9) have been successfully developed based on bithiophene compound (18). Preparation of soluble compound (18) has been improved with better yield. Compounds (6), (7), and (8) exhibit good field-effect performances with high mobility of 0.15, 0.38, and 0.24 cm2/Vs via s
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35

Lin, Yung-Sheng, and 林永昇. "High Efficiency Transparent Organic Thin Film Transistors." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/53959590162272131414.

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碩士<br>國立交通大學<br>光電工程系所<br>94<br>One novel electrode-architecture has been adapted to fabricate transparent organic thin-film transistors (OTFTs). Due to the high injection barrier of the indium-tin-oxide (ITO)/pentacene interface, the device exhibited a non-ideal behavior. After the modification of the contact by inserting a thin-layer of one metal oxide (MoO2 or V2O5), the device performance was improved dramatically. By using the novel electrode architecture, an OTFT with more than 60 % transmittance in the visible region has been demonstrated. In addition, the transmittance was further impr
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36

YANG, CHENG-HUAI, and 楊承淮. "Study on Organic/Inorganic Hybrid Films for Organic Thin Film Transistor/Memory Applications." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/bppy4f.

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碩士<br>明志科技大學<br>材料工程系碩士班<br>106<br>In this study, a stretchable organic/inorganic hybrid film was successfully developed for transistor/memory.PEDOT:PSS was used as a gate and synthesize soluble polyimide by sol-gel method. Polyimide is mixed with silicon-titanium dioxide to form an organic/inorganic hybrid film, and the weight percentage of the inorganic substance is changed to find an optimum condition. In addition, Jeffamine D2000 and Polyurethane are added to the organic/inorganic hybrid film to increase the tensile properties of the component and improve the tensile resistance of the comp
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37

Kuo, Chung-Chen. "High performance small-molecule organic thin film transistors." 2005. http://www.etda.libraries.psu.edu/theses/approved/WorldWideIndex/ETD-1108/index.html.

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38

Park, Sung Kyu. "High mobility solution processed organic thin film transistors." 2007. http://etda.libraries.psu.edu/theses/approved/WorldWideIndex/ETD-2145/index.html.

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39

Chen, Ying-Guo, and 陳英國. "Lithium Fluoride in Organic Thin Film Transistors applications." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/16987698375958915620.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>95<br>The effects of thin lithium fluoride (LiF) insulating layer in pentacene-based organic thin film transistors (OTFT) are studied. The LiF thin film has been used improve the efficiency of the carrier injection. The pentacene-based OTFT with inserted LiF thin layer on different positions was fabricated. The performance of drain current is obviously enhanced while LiF is inserted between gate electrode and dielectric layer in OTFTs. Here, we carry out the structure on the plastic substrate, and the maximum saturation current increases from 7.5µA to 22µA. Furth
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40

Hsieh, Yaosheng, and 謝曜聲. "The Study Of Ambipolar Organic Thin-Film Transistors." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/18087998016532888060.

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碩士<br>義守大學<br>電子工程學系<br>100<br>The top contact ambipolar organic thin-film transistors (OTFTs) and inverter based on the active layer of pentacene/C60 have been fabricated. The device’s structure is glass/indium-tin oxide ITO)/poly(methyl methacrylate) (PMMA)/pentacene/C60/Ag(source/drain). We studied the effect of active layer (pentacene, C60) thickness on the performance of OTFTs, and found their optimum thickness is 12 nm of pentacene and 40 nm of C60, respectively. The transistor shows ambipolar transporting characteristics with the output current (IDS) of -8.45 μA、16.65 μA, electron and h
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41

Hein, Moritz. "Organic Thin-Film Transistors: Characterization, Simulation and Stability." Doctoral thesis, 2013. https://tud.qucosa.de/id/qucosa%3A28703.

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Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced th
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42

Chen, Yo-Hsien, and 陳宥先. "Improved Organic Thin Film Transistors with N2 treatment." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/43598566628941552377.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>Organic thin-film transistors are novel electronic devices. They have the advantages of low cost and low process temperature, and can be fabricated on various substrates deemed possible. However, the carrier mobility of organic material is still relatively poor when it is used as semiconductor. 　This thesis will focus on the additional process called N2 treatment. This treatment is similar to general doping process. With the treatment, the OTFTs can get better performance in electrical characteristics. 　The first part is concerned with the difference in
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43

Lin, Zong-Rong, and 林宗嶸. "Graphene Nanostructures for Organic P3HT Thin Film Transistors." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/86872776600847513736.

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碩士<br>國立交通大學<br>照明與能源光電研究所<br>105<br>Technology has always come from human nature. In recent years, information terminal devices have become more convenient and easily portable to meet customers’ needs. This desire and request gradually stimulates the development of flexible electronics. Conventional electronic components use silicon wafers or glass as the substrate material and are fabricated using expensive lithography processes, while flexible electronics use either Spin-Coating or Ink- -jet Printing) and other process technology. Microelectronic components are manufactured on flexible subs
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44

Yu, Shih-po, and 余適伯. "Organic Thin Film Transistors With Nanogroove Gate Dielectrics." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/24009547317803318913.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>97<br>Pentacene is a very popular material to be the semiconductor layer on organic-thin-film-transistors (OTFT) because of its high operating performance in recently decades. In this experiment, we constructed a periodic nanogroove dielectric layer by hot embossing nanoimprint lithography in organic thin film transistors to achieve high field-effect mobility and ultrahigh anisotropic ratio of the mobility (> 200) defined as the mobility ratio of parallel nanogroove to perpendicular nanogroove. There were four periods, including 800, 1200, 1600, and 2400 nm, of na
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45

Lee, Kwang Seok 1973. "Water-dispersible, conductive polyaniline for organic thin-film electronics." Thesis, 2007. http://hdl.handle.net/2152/3733.

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Sun, Bin. "High-Performance Polymer Semiconductors for Organic Thin-Film Transistors." Thesis, 2012. http://hdl.handle.net/10012/6960.

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A novel polymer semiconductor with side chains thermally cleavable at a low temperature of 200 °C was synthesized. The complete cleavage and removal of the insulating 2-octyldodecanoyl side chains were verified with TGA, FT-IR, and NMR data. The N-H groups on the native polymer backbone are expected to form intermolecular hydrogen bonds with the C=O groups on the neighboring polymer chains to establish 3-D charge transport networks. The resulting side chain-free conjugated polymer is proven to be an active p-type semiconductor material for organic thin film transistors (OTFTs), exhibiting hole
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47

Chu, Yi-Hsing, and 朱益興. "High Performance Amorphous InGaZnO4/Organic Ambipolar Thin Film Transistors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/04405325877017617834.

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碩士<br>國立交通大學<br>光電工程系所<br>97<br>Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In2O3-Ga2O3-ZnO) have been examined on SiO2 /p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus measuring ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed
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48

Yu, Wei-Kuan, and 余威寬. "Suppression of Hysteressis in Ambipolar Organic Thin-Film Transistors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/28850135879387812794.

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碩士<br>國立交通大學<br>顯示科技研究所<br>97<br>Suppression of hysteresis in ambipolar organic thin-film transistors (OTFTs) made of pentacene / N,N'-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) heterojunction structure have been demonstrated. Under ambient conditions, the n-channel performance is easily affected by water and oxygen, the devices made on SiO2 surface only exhibited ambipolar properties in inert condition. However, using the hydroxyl-free polymers as the insulators, the devices could exhibit ambipolar characteristics under ambient condition. More importantly, we also observed that the hys
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施尹婷. "The Post-Annealing Effect on Organic Thin-Film Transistors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/29242020515486580319.

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碩士<br>國立交通大學<br>顯示科技研究所<br>95<br>Charge transport in organic semiconductor is typically described by hopping of charges between localized states. For this type of transport, the charge carriers are easily trapped at the grain boundary or by the disorder and impurities around the grains, resulting in the limitation of organic thin-film transistors (OTFTs) device mobility. Therefore, how to improve organic thin film quality becomes a very important issue. Based on the principle of controlling the growth of pentacene film, the effect of post-annealing treatment on pentacene-based TFTs is investig
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Li, Jeng-Ting, and 李政廷. "Polyaniline nanofibers thin film-based organic field-effect transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/15175350295886008875.

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碩士<br>中原大學<br>奈米科技碩士學位學程<br>99<br>We investigate the electronic transport characteristics of HCl-doped polyaniline(PANI) nanofibers thin film-based transistor. The HCl-doped PANI nanofiber thin film is prepared by electrochemical synthesis and the thickness is controlled within 50nm. The current-voltage characteristic (ID-VD) and the resistivity of PANI channel layer is observed at a variety of temperature from 300 to 24K. We have found that the temperature dependence of the conductivity increases with reducing temperature on PANI channel layer by Efros–Shklovskii hopping conduction. The charg
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