Relevant bibliographies by topics / Thin Film Transistors (TFT)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Thin Film Transistors (TFT)'

Author: Grafiati
Published: 6 September 2023
Last updated: 31 July 2025

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Journal articles on the topic "Thin Film Transistors (TFT)"

1

Kavindra, Kandpal, and Gupta Navneet. "Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends." Bulletin of Electrical Engineering and Informatics 5, no. 2 (2016): 205–12. https://doi.org/10.11591/eei.v5i2.530.

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This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters. Effect of high – dielectrics, grain boundaries, trap densities, and threshold voltage
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Piyush, Eklavya, Debnath Nirmalya, Vaishnav Shrey, and N. Ramavenkateswaran. "Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics." International Journal of Engineering and Advanced Technology (IJEAT) 9, no. 5 (2020): 270–73. https://doi.org/10.35940/ijeat.E9477.069520.

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The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not suppor
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Park, Hyun-Woo, Sera Kwon, Aeran Song, Dukhyun Choi, and Kwun-Bum Chung. "Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor." Journal of Materials Chemistry C 7, no. 4 (2019): 1006–13. http://dx.doi.org/10.1039/c8tc03585g.

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The key to full understanding of the degradation mechanism of oxide thin film transistors (Ox-TFTs) by gate bias stress is to investigate dynamical changes of the electron trap site at the channel region while a real-time gate bias is applied to the actual thin film transistor (TFT) structure.
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Manoli, Kyriaki, Preethi Seshadri, Mandeep Singh, et al. "Solvent-gated thin-film-transistors." Physical Chemistry Chemical Physics 19, no. 31 (2017): 20573–81. http://dx.doi.org/10.1039/c7cp03262e.

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TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.
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Pokharel, Peshal, and Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics." Himalayan Journal of Science and Technology 6, no. 1 (2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.

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A thin-film transistor (TFT) is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) made by coating an insulating substrate with layers of an active semiconductor layer, metallic contacts, and the dielectric layer. FET transistors consist of three main components: source, gate, and drain. The main objective of the work is to fabricate the channel component by growing the ZnO nanostructure on the glass substrate using spin coating and spray pyrolysis methods. Thin films of zinc oxide (ZnO) were deposited on glass substrates by spin coating techniques from a precursor so
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Lu, You-zheng, An-Thung Cho, Lu Mao, et al. "P‐5.26: Stress Model Simulation of TFT Reliability for G8.6 Large‐size TFT‐LCDs." SID Symposium Digest of Technical Papers 56, S1 (2025): 1128–31. https://doi.org/10.1002/sdtp.19015.

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In this work, Time‐sampling Simulation and lifetime calculation are both used to predict TFT reliability. The thin‐film transistor can be used to simulate with the electrical properties of TFT devices according to the parameters measured. Different insulating layer design of TFT device has been investigated by stress model simulation and the TFT device lifetime reliability. We propose a device model for a‐Si thin‐film transistors under positive bias temperature stress (PBTS). This model is a function of the channel interface electric field, and device simulations using this model reproduce mea
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Kuo, Yue. "(Invited) Oxide TFT Applications: Principles and Challenges." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1285. http://dx.doi.org/10.1149/ma2022-02351285mtgabs.

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The main advantage of the thin film transistor (TFT) is that it can be fabricated on non-wafer substrate independent of the size, flexibility, and morphology. All composing films of the TFT are deposited at the low temperature. Therefore, TFTs can be applied to a broad range of consumer, biological, chemical, and optical products that are difficult to fabricate with the wafer based MOSFETs. There are many reports on a-Si:H and poly-Si TFT applications in displays, imagers, sensors, drivers, flexible electronics, and circuits (1,2). In principle, oxide TFTs can be applied to similar products. H
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Mądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores, and Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes." MRS Advances 1, no. 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.

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ABSTRACTThin-film transistors (TFT) were fabricated at a room-temperature (RT) with zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. To isolate the gate oxide and gate electrode influence on the device performance, common gate configuration on a commercial substrate with thermal SiO2 (100 nm) was selected. A threshold voltage (VTh) of 10 V and ION/IOFF ratio of 1 × 10-5 were obtained. Once the reference data was taken transistors were exposed to glycerol. Temporary changes in device characteristics were observed due to the influence of glycerol, a low conductivity medium.
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Lee, Sungsik. "Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors." Scientific Reports 6, no. 22567 (2016): 1–9. https://doi.org/10.1038/srep22567.

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The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the surface potential is approximately twice the bulk potential. In contrast, the conduction threshold in accumulation mode transistors, such as the oxide thin film transistor (TFT), has remained ambiguous in view of the complex density of states distribution in the mobility gap. This paper quantitatively describes the conduction threshold of accumulation-mode InGaZnO TFTs as the transition of the Fermi level from deep to tail states, which can be defined as the juxtaposition of linear and
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Gu, Guiru, Yunfeng Ling, Runyu Liu, et al. "All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response." Journal of Nanotechnology 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/823680.

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We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band stru
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Dissertations / Theses on the topic "Thin Film Transistors (TFT)"

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Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced th
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Dong, Hanpeng. "Microcrystalline silicon based thin film transistors fabricated on flexible substrate." Thesis, Rennes 1, 2015. http://www.theses.fr/2015REN1S173/document.

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Le travail de cette thèse porte sur le développement de transistors en couche mince (Thin Film Transistors, TFTs) à base de silicium microcristallin fabriqués sur un substrat flexible à très basse température (T< 180 °C). La première partie de ce travail a consisté à étudier la stabilité électrique de ces TFTs. L'étude de la stabilité électrique des TFTs de type N fabriqués sur verre a montré que ces TFTs sont assez stables, la tension de seuil VTH ne se décale que de 1.2 V au bout de 4 heures de stress sous une tension de grille VGSstress= +50V et à une température T=50 °C. L'instabilité é
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Ho, Tsz Kin. "Design of TFT circuit and touchscreen electronics /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20HO.

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Nominanda, Helinda. "Amorphous silicon thin film transistor as nonvolatile device." Texas A&M University, 2008. http://hdl.handle.net/1969.1/86004.

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n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray irradiation damaged bulk f
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Rossi, Leonardo. "Flexible oxide thin film transistors: fabrication and photoresponse." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14542/.

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Gli ossidi amorfi semiconduttori (AOS) sono nuovi candidati per l’elettronica flessibile e su grandi aree: grazie ai loro legami prevalentemente ionici hanno una mobilità relativamente alta (µ > 10cm^2/Vs) anche nella fase amorfa. Transistor a film sottile (TFT) basati sugli AOS saranno quindi più performanti di tecnologie a base di a-Si e più economici di quelle a base di silicio policristallino. Essendo amorfi, possono essere depositati a basse temperature e su substrati polimerici, caratteristica chiave per l’elettronica flessibile e su grandi aree. Per questa tesi, diversi TFT sono stati
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Fratelli, Ilaria. "Flexible oxide thin film transistors: device fabrication and kelvin probe force microscopy analysis." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/13538/.

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I transistor a film sottile basati su ossidi amorfi semiconduttori sono ottimi candidati nell'ambito dell'elettronica su larga scala. Al contrario delle tecnologie basate su a-Si:H a poly-Si, gli AOS presentano un'elevata mobilità elettrica (m > 10 cm^2/ Vs) nonostante la struttura amorfa. Inoltre, la possibilità di depositare AOS a basse temperature e su substrati polimerici, permette il loro impiego nel campo dell'elettronica flessibile. Al fine di migliorare questa tecnologia, numerosi TFT basati su AOS sono stati fabbricati durante 4 mesi di attività all'Università Nova di Lisbona. Tutt
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Jakob, Markus Prüfer. "Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors." Doctoral thesis, Universitat Rovira i Virgili, 2022. http://hdl.handle.net/10803/673905.

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Els transistors orgànics de capa fina (TFT) són dispositius prometedors per a les pantalles flexibles de matriu activa i els conjunts de sensors, ja que poden fabricar-se a temperatures de procés relativament baixes i, per tant, no sols en vidre, sinó també en substrats polimèrics. Per a millorar el rendiment dinàmic dels dispositius i circuits TFT , una reducció agressiva de la longitud de canal provoca efectes extrínsecs en els dispositius que han de ser capturats per models compactes. Aquesta tesi presenta models analítics, basats en la física, de la degradació de la pendent subumbral,
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Dosev, Dosi Konstantinov. "Fabrication, characterisation and modelling of nanocrystalline silicon thin-film transistors obtained by hot-wire chemical vapour deposition." Doctoral thesis, Universitat Politècnica de Catalunya, 2003. http://hdl.handle.net/10803/6324.

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Hot-wire chemical vapour deposition (HWCVD) is a promising technique that permits polycrystalline silicon films with grain size of nanometers to be obtained at high deposition rates and low substrate temperatures. This material is expected to have better electronic properties than the commonly used amorphous hydrogenated silicon (a-Si:H).<br/><br/>In this work, thin-film transistors (TFTs) were fabricated using nanocrystalline hydrogenated silicon film (nc-Si:H), deposited by HWCVD over thermally oxidized silicon wafer. The employed substrate temperature during the deposition process permits i
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Noring, Martin. "To automatically estimate the surface area coverage of carbon nanotubes on thin film transistors with image analysis : Bachelor’s degree project report." Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-157168.

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This report discuss the developement of a MATLAB-based tool for the analysis ofsurface area coverage of carbon nanotube networks from atomic force microscopyimages. The tool was compared with a manual method and the conclusion was that ithas, at least, the same accuracy as the manual mehtod, and it needs much less time forthe analysis. The tool couldn’t analyze images of carbon nanotube networks if theimages were to noisy or the networks to dense. The tool can help in the research ofthin-film transistors with carbon nanotube networks as the semiconducting channelmaterial.
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Zhu, Lei. "Modeling of a-Si:H TFT I-V Characteristics in the Forward Subthreshold Operation." Thesis, University of Waterloo, 2005. http://hdl.handle.net/10012/868.

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The hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used as switching elements in LCD displays and large area matrix addressed senor arrays. In recent years, a-Si:H TFTs have been used as analog active components in OLED displays. However, a-Si:H TFTs exhibit a bias induced metastability. This problem causes both threshold voltage and subthreshold slope to shift with time when a gate bias is applied. These instabilities jeopardize the long-term performance of a-Si:H TFT circuits. Nevertheless a-Si:H TFTs show an exponential transfer characteristic
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Books on the topic "Thin Film Transistors (TFT)"

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Tsukada, Toshihisa. TFT/LCD: Liquid-crystal displays addressed by thin-film transistors. Gordon and Breach, 1996.

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Aoki, Hitoshi. Dynamic characterization of a-Si TFT-LCD pixels. Hewlett-Packard Laboratories, Technical Publications Department, 1996.

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Tsukada, Toshihisa. TFT/LCD: Liquid-crystal displays addressed by thin-film transistors. Gordon and Breach, 1996.

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Maeda, Shigenobu. Teishōhi denryoku kōsoku MOSFET gijutsu: Takesshō shirikon TFT fukagata SRAM to SOI debaisu. Sipec, 2002.

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International Workshop on Active Matrix Liquid Crystal Displays (2001 Tokyo, Japan). AM-LCD 01: Digest of technical papers : 2001 International Workshop on Active Matrix Liquid Crystal Displays, TFT technologies and related materials, July 11-13, 2001, Kogakuin University, Tokyo, Japan. Japan Society of Applied Physics, 2001.

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International Workshop on Active Matrix Liquid Crystal Displays (1999 Tokyo, Japan). AM-LCD 99: Digest of technical papers :1999 International Workshop on Active Matrix Liquid Crystal Displays, TFT technologies and related materials, July 14-16, 1999, Kogakuin University, Tokyo, Japan. Japan Society of Applied Physics, 1999.

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Brotherton, S. D. Introduction to Thin Film Transistors: Physics and Technology of TFTs. Springer International Publishing, 2013.

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Kuo, Yue, ed. Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2.

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Brotherton, S. D. Introduction to Thin Film Transistors. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2.

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Hafdi, Zoubeida. Amorphous Silicon Thin-Film Transistors. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-24793-4.

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Book chapters on the topic "Thin Film Transistors (TFT)"

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Ishihara, Ryoichi. "Poly-Si TFT Structures." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_15.

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Choi, Byong-Deok, Inhwan Lee, and Oh-Kyong Kwon. "Poly-Si TFT Drivers." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_22.

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Kuo, Yue. "a-Si:H TFT Structures." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_4.

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Kuo, Yue. "Poly-Si TFT for non-LCD Applications." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_24.

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Flewitt, Andrew J., and William I. Milne. "a-Si:H TFT Thin Film and Substrate Materials." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_2.

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Higashi, Seiichiro. "Process Integration Issues for Poly-Si TFT Fabrication." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_21.

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Kuo, Yue. "Plasma Etching in a-Si:H TFT Array Fabrication." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_7.

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Matsumura, Hideki, Akira Izumi, and Atsushi Masuda. "Catalytic Chemical Vapor Deposition of a-Si:H TFT." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_9.

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Kuo, Yue. "Deposition of Dielectric Thin Films for a-Si:H TFT." In Thin Film Transistors. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_6.

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Brotherton, S. D. "Poly-Si TFT Performance." In Introduction to Thin Film Transistors. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_8.

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Conference papers on the topic "Thin Film Transistors (TFT)"

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Colli, A. "Thin film transistors on nanostructured layers prepared by nanowire lithography." In 2009 Compact Thin-Film Transistor Modeling for Circuit Simulation (TFT/CTFT). IEEE, 2009. http://dx.doi.org/10.1109/ctft.2009.5379875.

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Adl, Ahmad Hossein, Samira Farsinezhad, Alex Ma, Douglas W. Barlage, and Karthik Shankar. "High Performance Zinc Oxide Thin Film Transistors Through Improved Material Processing and Device Design." In ASME 2014 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/imece2014-36941.

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Solution processing (SP) is a cheap, simple and high-throughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carrie
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Tang, Wei, Jiaqing Zhao, Qiaofeng Li, and Xiaojun Guo. "Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608054.

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Chen, Yonghua, Zhinong Yu, Xuyang Li, and Jin Cheng. "Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608055.

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Lv, Nannan, Zening Wang, Lei Lu, and Mingxiang Wang. "Structure Optimization on Elevated-Metal a-InGaZnO Thin Film Transistors." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608105.

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Zhou, Yongkai, Shik Lin Lee, Chao Fu, Younan Hua, and Xiaomin Li. "Fault Isolation and TEM Study in State-of-Art Thin-Film Transistors." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0374.

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Abstract In this work, we discussed the fault isolation method for the Thin-Film Transistor (TFT). Many defects in the TFT can be directly observed by optical microscope; however, some defects are not visible in either optical microscope or SEM making the fault isolation effort very challenging. We demonstrated that OBIRCH can be used to find defect locations in TFT failures for leakage and shorts. The TFT is so fragile that the laser power and biasing voltage have to be very carefully controlled to avoid damaging the TFT. After identifying the defect location by OBIRCH hot spot detection, the
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Wu, Yue, Weina Yong, Chia-Yu Lee, and Hang Zhou. "An Asymmetric Metal Electrode for TFT-LCDs." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608114.

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He, Yongli, Ya Gao, Zehua Liu, Jie Luo, Chenxi Zhang, and Qing Wan. "Indium-Zinc-Oxide Electric-Double-Layer Thin-Film Transistors for Humidity Sensing." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608110.

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Zhong, Wei, Guoyuan Li, and Rongsheng Chen. "Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608102.

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Deng, Xuan, Yuqing Zhang, Haishi Fu, and Shengdong Zhang. "High mobility metal-oxide thin film transistors with IGZO/In2O3 dual-channel structure." In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT). IEEE, 2018. http://dx.doi.org/10.1109/cad-tft.2018.8608103.

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Reports on the topic "Thin Film Transistors (TFT)"

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Ray, Asim K. Design of Novel Organic Thin Film Transistors for Wearable Electronics. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada565909.

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Hatalis, Miliadis K. Low Temperature Polysilicon Thin Film Transistors in Advanced Display Technologies. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada388339.

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Park, Chan E. Nanocomposite Gate Dielectrics With Nanoparticles for Organic Thin Film Transistors. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada473096.

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