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Dissertations / Theses on the topic 'Thin Film Transistors (TFT)'

Author: Grafiati

Published: 6 September 2023

Last updated: 31 July 2025

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1

Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Organic thin ﬁlm transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These beneﬁts are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced th

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2

Dong, Hanpeng. "Microcrystalline silicon based thin film transistors fabricated on flexible substrate." Thesis, Rennes 1, 2015. http://www.theses.fr/2015REN1S173/document.

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Le travail de cette thèse porte sur le développement de transistors en couche mince (Thin Film Transistors, TFTs) à base de silicium microcristallin fabriqués sur un substrat flexible à très basse température (T< 180 °C). La première partie de ce travail a consisté à étudier la stabilité électrique de ces TFTs. L'étude de la stabilité électrique des TFTs de type N fabriqués sur verre a montré que ces TFTs sont assez stables, la tension de seuil VTH ne se décale que de 1.2 V au bout de 4 heures de stress sous une tension de grille VGSstress= +50V et à une température T=50 °C. L'instabilité é

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3

Ho, Tsz Kin. "Design of TFT circuit and touchscreen electronics /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20HO.

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4

Nominanda, Helinda. "Amorphous silicon thin film transistor as nonvolatile device." Texas A&M University, 2008. http://hdl.handle.net/1969.1/86004.

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n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray irradiation damaged bulk f

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5

Rossi, Leonardo. "Flexible oxide thin film transistors: fabrication and photoresponse." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14542/.

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Gli ossidi amorfi semiconduttori (AOS) sono nuovi candidati per l’elettronica flessibile e su grandi aree: grazie ai loro legami prevalentemente ionici hanno una mobilità relativamente alta (µ > 10cm^2/Vs) anche nella fase amorfa. Transistor a film sottile (TFT) basati sugli AOS saranno quindi più performanti di tecnologie a base di a-Si e più economici di quelle a base di silicio policristallino. Essendo amorfi, possono essere depositati a basse temperature e su substrati polimerici, caratteristica chiave per l’elettronica flessibile e su grandi aree. Per questa tesi, diversi TFT sono stati

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6

Fratelli, Ilaria. "Flexible oxide thin film transistors: device fabrication and kelvin probe force microscopy analysis." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/13538/.

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I transistor a film sottile basati su ossidi amorfi semiconduttori sono ottimi candidati nell'ambito dell'elettronica su larga scala. Al contrario delle tecnologie basate su a-Si:H a poly-Si, gli AOS presentano un'elevata mobilità elettrica (m > 10 cm^2/ Vs) nonostante la struttura amorfa. Inoltre, la possibilità di depositare AOS a basse temperature e su substrati polimerici, permette il loro impiego nel campo dell'elettronica flessibile. Al fine di migliorare questa tecnologia, numerosi TFT basati su AOS sono stati fabbricati durante 4 mesi di attività all'Università Nova di Lisbona. Tutt

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7

Jakob, Markus Prüfer. "Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors." Doctoral thesis, Universitat Rovira i Virgili, 2022. http://hdl.handle.net/10803/673905.

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Els transistors orgànics de capa fina (TFT) són dispositius prometedors per a les pantalles flexibles de matriu activa i els conjunts de sensors, ja que poden fabricar-se a temperatures de procés relativament baixes i, per tant, no sols en vidre, sinó també en substrats polimèrics. Per a millorar el rendiment dinàmic dels dispositius i circuits TFT , una reducció agressiva de la longitud de canal provoca efectes extrínsecs en els dispositius que han de ser capturats per models compactes. Aquesta tesi presenta models analítics, basats en la física, de la degradació de la pendent subumbral,

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8

Dosev, Dosi Konstantinov. "Fabrication, characterisation and modelling of nanocrystalline silicon thin-film transistors obtained by hot-wire chemical vapour deposition." Doctoral thesis, Universitat Politècnica de Catalunya, 2003. http://hdl.handle.net/10803/6324.

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Hot-wire chemical vapour deposition (HWCVD) is a promising technique that permits polycrystalline silicon films with grain size of nanometers to be obtained at high deposition rates and low substrate temperatures. This material is expected to have better electronic properties than the commonly used amorphous hydrogenated silicon (a-Si:H).<br/><br/>In this work, thin-film transistors (TFTs) were fabricated using nanocrystalline hydrogenated silicon film (nc-Si:H), deposited by HWCVD over thermally oxidized silicon wafer. The employed substrate temperature during the deposition process permits i

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9

Noring, Martin. "To automatically estimate the surface area coverage of carbon nanotubes on thin film transistors with image analysis : Bachelor’s degree project report." Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-157168.

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This report discuss the developement of a MATLAB-based tool for the analysis ofsurface area coverage of carbon nanotube networks from atomic force microscopyimages. The tool was compared with a manual method and the conclusion was that ithas, at least, the same accuracy as the manual mehtod, and it needs much less time forthe analysis. The tool couldn’t analyze images of carbon nanotube networks if theimages were to noisy or the networks to dense. The tool can help in the research ofthin-film transistors with carbon nanotube networks as the semiconducting channelmaterial.

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10

Zhu, Lei. "Modeling of a-Si:H TFT I-V Characteristics in the Forward Subthreshold Operation." Thesis, University of Waterloo, 2005. http://hdl.handle.net/10012/868.

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The hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used as switching elements in LCD displays and large area matrix addressed senor arrays. In recent years, a-Si:H TFTs have been used as analog active components in OLED displays. However, a-Si:H TFTs exhibit a bias induced metastability. This problem causes both threshold voltage and subthreshold slope to shift with time when a gate bias is applied. These instabilities jeopardize the long-term performance of a-Si:H TFT circuits. Nevertheless a-Si:H TFTs show an exponential transfer characteristic

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11

Elzwawi, Salim Ahmed Ali. "Cathodic Arc Zinc Oxide for Active Electronic Devices." Thesis, University of Canterbury. Electrical and Computer Engineering, 2015. http://hdl.handle.net/10092/10852.

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The filtered cathodic vacuum arc (FCVA) technique is a well established deposition method for wear resistant mechanical coatings. More recently, this method has attracted attention for growing ZnO based transparent conducting films. However, the potential of FCVA deposition to prepare ZnO layers for electronic devices is largely unexplored. This thesis addresses the use of FCVA deposition for the fabrication of active ZnO based electronic devices. The structural, electrical and optical characteristics of unintentionally doped ZnO films grown on different sapphire substrates were systematically

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12

Ullah, Syed Shihab. "Solution Processing Electronics Using Si6 H12 Inks: Poly-Si TFTs and Co-Si MOS Capacitors." Thesis, North Dakota State University, 2011. https://hdl.handle.net/10365/28902.

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The development of new materials and processes for electronic devices has been driven by the integrated circuit (IC) industry since the dawn of the computer era. After several decades of '"Moore's Law"-type innovation, future miniaturization may be slowed down by materials and processing limitations. By way of comparison, the nascent field of flexible electronics is not driven by the smallest possible circuit dimension, but instead by cost and form-factor where features typical of 1970s CMOS (i.e., channel length - IO ?m) will enable flexible electronic technologies such as RFID, e-paper, phot

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13

Grant, David James. "Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD." Thesis, University of Waterloo, 2004. http://hdl.handle.net/10012/805.

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Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Deposition (PECVD). Pulsed PECVD also reduces powder particle formation in the plasma and provides added degrees of freedom for process optimization. Unlike high frequency PECVD, pulsed PECVD can be scaled to deposit films over large areas with no reduction in performance. For this thesis, si

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14

Lindner, Thomas. "Organische Feldeffekt-Transistoren: Modellierung und Simulation." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2005. http://nbn-resolving.de/urn:nbn:de:swb:14-1116323078792-49660.

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Die vorliegende Arbeit befasst sich mit der Simulation und Modellierung organischer Feldeffekt-Transistoren (OFETs). Mittels numerischer Simulationen wurden detaillierte Untersuchungen zu mehreren Problemstellungen durchgeführt. So wurde der Einfluss einer exponentiellen Verteilung von Trapzuständen, entsprechend dem sogenannten a-Si- oder TFT-Modell, auf die Transistorkennlinien untersucht. Dieses Modell dient der Beschreibung von Dünnschicht-Transistoren mit amorphen Silizium als aktiver Schicht und wird teils auch für organische Transistoren als zutreffend angesehen. Dieser Sachverhalt wird

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15

Lindner, Thomas. "Organische Feldeffekt-Transistoren: Modellierung und Simulation." Doctoral thesis, Technische Universität Dresden, 2004. https://tud.qucosa.de/id/qucosa%3A24492.

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Die vorliegende Arbeit befasst sich mit der Simulation und Modellierung organischer Feldeffekt-Transistoren (OFETs). Mittels numerischer Simulationen wurden detaillierte Untersuchungen zu mehreren Problemstellungen durchgeführt. So wurde der Einfluss einer exponentiellen Verteilung von Trapzuständen, entsprechend dem sogenannten a-Si- oder TFT-Modell, auf die Transistorkennlinien untersucht. Dieses Modell dient der Beschreibung von Dünnschicht-Transistoren mit amorphen Silizium als aktiver Schicht und wird teils auch für organische Transistoren als zutreffend angesehen. Dieser Sachverhalt wird

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16

Abusabee, K. M. "Thin film engineering for transparent thin film transistors." Thesis, Nottingham Trent University, 2014. http://irep.ntu.ac.uk/id/eprint/127/.

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Zinc oxide (ZnO) and Indium Gallium Zinc Oxide (IGZO) thin films are of interest as oxide semiconductors in thin film transistor (TFT) applications, due to visible light transparency, and low deposition temperature. There is particular interest in ZnO and IGZO based transparent TFT devices fabricated at low temperature on low cost flexible substrates. However, thermal annealing processes are typically required to ensure a good performance, suitable long term stability, and to control the point defects which affect the electrical characteristics. Hence there is interest in post deposition proce

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17

Cheng, Xiang. "TFTs circuit simulation models and analogue building block designs." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/271853.

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Building functional thin-film-transistor (TFT) circuits is crucial for applications such as wearable, implantable and transparent electronics. Therefore, developing a compact model of an emerging semiconductor material for accurate circuit simulation is the most fundamental requirement for circuit design. Further, unique analogue building blocks are needed due to the specific properties and non-idealities of TFTs. This dissertation reviews the major developments in thin-film transistor (TFT) modelling for the computer-aided design (CAD) and simulation of circuits and systems. Following the pro

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18

Zhu, Wen Wei. "Organic thin film transistors." Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19597.

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Organic thin film transistors (OTFTs) have been fabricated using four different semiconducting polymers: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), polyhedral oligomeric silsesquioxanes (POSS) poly (2-methoxy-5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene) (MEH-PPV-POSS), poly[N-(3-methylphenyl)-N,N-diphenylamine-4,4'-diyl] (poly-TPD), and polyhedral oligomeric silsesquioxanes (POSS) poly (N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD-POSS). These OTFTs were fabricated on heavily doped «-type silicon wafers with thermally grown silicon dioxide layer was

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19

Panda, Durga Prasanna. "Nanocrystalline silicon thin film transistors." [Ames, Iowa : Iowa State University], 2006.

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20

Qian, Feng. "Thin film transistors in polysilicon /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,162.

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21

Bauza, M. "Nanocrystalline silicon thin film transistors." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1385744/.

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This thesis presents my work on the fabrication of nanocrystalline silicon (nc-Si) thin film transistors and characterization of their stability under different conditions. Nc-Si transistors are promising alternative to the current amorphous silicon (a-Si:H) devices, especially in areas where a-Si:H TFTs are reaching the performance ceiling, e.g. new large area applications such as active matrix organic light emitting diode displays (AMOLED). This is mostly due to the superior nc-Si properties – high carrier mobility and good electrical stability stemming from the crystalline Si grains embedde

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22

Lloyd, Giles Christian Rome. "Novel conjugated polymer thin film transistors." Thesis, University of Liverpool, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399071.

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23

Stott, J. E. "Organic thin film transistors : integration challenges." Thesis, University College London (University of London), 2013. http://discovery.ucl.ac.uk/1393282/.

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This thesis considers some of the requirements and challenges in the eld of organic thin lm transistors (OTFTs), from the standpoint of large scale integration using low temperature plastic compatible processes. A combination of processes and materials for use in the fabrication of OTFTs is developed, yielding device performance comparable with the state of the art for bottom-contact, bottom-gate, organic small molecule thin lm transistors. High quality silicon nitride (SiNx) gate dielectric material is developed using plasma enhanced chemical vapour deposition (PECVD) at a low temperature (15

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24

Herlogsson, Lars. "Electrolyte-Gated Organic Thin-Film Transistors." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-69636.

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There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at lo

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25

Breban, Mihaela. "Photocurrent spectroscopy of pentacene thin film transistors." College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/3973.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2006.<br>Thesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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26

Chen, Y. "Novel polysilicon high voltage thin film transistors." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597542.

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Research in High Voltage Thin Film Transistors (HVTFTs) has been driven by the need for devices with reduced on-state resistance and high blocking capability to improve the performance of large area electronic applications. Conventional HVTFTs give unsatisfactory performance because of the high on-state resistance, low breakdown voltage (Offset Drain HVTFT), high possibility of oxide failure and requirement for extra external bias line (Metal Field Plate HVTFT) etc. This thesis presents a novel high voltage thin film transistor structure - Semi-Insulating Field Plate HVTFT (SIFP HVTFT) which u

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27

Nausieda, Ivan Alexander. "Pentacene integrated thin-film transistors and circuits." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/55119.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.<br>Page 179 blank. Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>Organic semiconductors offer the potential of large-area, mechanically flexible electronics due to their low processing temperatures. We have developed a near-room-temperature (< 95°C) process flow to fabricate pentacene integrated organic thin-film transistors (OTFTs) compatible with plastic substrates such as polyethylene terephthalate (PET). Integration of inkjet printed organic

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28

Marinkovic, Marko [Verfasser]. "Contact resistance effects in thin film solar cells and thin film transistors / Marko Marinkovic." Bremen : IRC-Library, Information Resource Center der Jacobs University Bremen, 2013. http://d-nb.info/1037014243/34.

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29

Hein, Moritz. "Organic Thin-Film Transistors: Characterization, Simulation and Stability." Doctoral thesis, 2013. https://tud.qucosa.de/id/qucosa%3A28703.

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Organic thin ﬁlm transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These beneﬁts are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced th

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30

Sinha, Rajat. "Reliability Physics of Thin-Film Transistors." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5682.

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Thin-film transistor technology based on non-crystalline materials forms the workhorse of large area electronics applications including display systems, sensor systems and novel technologies including flexible electronics. A successful development and commercialisation of any technology requires a thorough understanding of the physics and reliability concerns revolving around that technology. Electrostatic discharge (ESD) is one of the major reliability concerns in microelectronics industry and can plague the device development at many stages. It is a high-field high-frequency phenomenon

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31

Nair, Aswathi R. "Textured Gate Thin Film Transistors and Circuits." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5415.

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Reliable, high performance integrated circuits based on thin film transistors (TFTs) on flexible substrates have a lot of advantages, especially in applications like flexible displays, spherical image sensors, wearable devices for health care and communication etc. However, the materials for flexible substrates are temperature sensitive, which limits the fabrication process temperature and hence TFTs have non-crystalline semiconductor films as their active layer. The low transconductance associated with these films and absence of complementary devices often makes circuit design a tedious proce

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32

Moradi, Maryam. "Vertical Thin Film Transistors for Large Area Electronics." Thesis, 2008. http://hdl.handle.net/10012/3937.

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The prospect of producing nanometer channel-length thin film transistors (TFTs) for active matrix addressed pixelated arrays opens up new high-performance applications in which the most amenable device topology is the vertical thin film transistor (VTFT) in view of its small area. The previous attempts at fabricating VTFTs have yielded devices with a high drain leakage current, a low ON/OFF current ratio, and no saturation behaviour in the output current at high drain voltages, all induced by short channel effects. To overcome these adversities, particularly dominant as the channel length appr

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33

"Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors." Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.37039.

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abstract: A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detector

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34

Chiu, Yi-Ming, and 邱義銘. "Study of Drain Engineering in Polycrystalline Silicon Thin-Film-Transistors (Poly-Si TFT)." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/73013755227128557554.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>93<br>Polycrystalline silicon (polysilicon) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays, allowing the integration of both active matrix and driving circuitry on the same substrate. However, conventional self-aligned polysilicon TFTs present several undesired effects in the electrical characteristics, including large off-state currents (leakage), kink effect and hot carrier instabilities. These effects are related to the presence of high electric fields at the drain junction and electric field near th

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Chun-DaTu and 塗俊達. "Design of a-Si:H Thin-Film Transistors Driving Circuit for TFT-LCD Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/10539326124633239785.

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36

"Design of NMOS and CMOS Thin Film Transistors and Application to Electronic Textiles." Doctoral diss., 2012. http://hdl.handle.net/2286/R.I.15126.

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abstract: The field of flexible displays and electronics gained a big momentum within the recent years due to their ruggedness, thinness, and flexibility as well as low cost large area manufacturability. Amorphous silicon has been the dominant material used in the thin film transistor industry which could only utilize it as N type thin film transistors (TFT). Amorphous silicon is an unstable material for low temperature manufacturing process and having only one kind of transistor means high power consumption for circuit operations. This thesis covers the three major researches done on flexible

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37

Trivedi, Kruti. "Design, Fabrication and Characterization of ZnO based Thin Film Schottky Diodes and Transistors." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5821.

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The thesis focuses on the development of thin film Schottky diodes and thin film transistors (TFTs) based on ZnO. ZnO has been recognized as a promising candidates for the next generation of transparent and flexible electronics for displays. Some of the interesting properties of ZnO include the variation from insulating to semiconducting nature by change of stoichiometry, the relative low toxicity enabling its use in edible materials, the presence of a reasonably high electron mobility and its high transmission to visible light. All of these properties have increased interest for the d

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38

Huang, San-Hao, and 黃三豪. "Optical Design of Novel Thin Film Transistor (TFT) Auto Laser Repair Equipment." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/43053139906065513961.

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碩士<br>國立中興大學<br>精密工程學系所<br>98<br>Taiwan plays one of the world''s leading OEM panel production roles. However, in the fast booming panel industry, the ability to handle the defects on panels is not so strong. Especially when panel size gets larger and larger and shows defective symbols, the fixing technique will be of much importance. In response to this demand, the domestic companies are using laser technology to develop “ TFT Auto Laser Repair Equipment ”, but the machine core parts “ laser repair system ” needs being imported from U.S. and Japan, and the price is high. In light

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39

Zhang, Jia-Wei, and 張家偉. "Structure Design of Polycrystalline Silicon Thin-Film-Transistors (Poly-Si TFTs)." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/43301490118093242811.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>97<br>Polycrystalline silicon thin-film-transistors (Poly-Si TFTs) have been widely used in various applications, such as static random memories (SRAMs), photodetector amplifier, scanner, and active matrix liquid crystal displays (AMLCDs). The electron field mobility of the ploy-Si TFT is larger than that of the amorphous-Si (a-Si) TFT, allowing the integration of both active matrix and driving circuitry on the same substrate. However, the conventional self-aligned poly-si TFT induces several undesired effects in the electrical characteristics, including large off-st

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40

Wu, Min-Lin, and 吳旻霖. "Study of buried-channel Polycrystalline Silicon Thin-Film-Transistors (Poly-Si TFTs)." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/82rtt3.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>94<br>Poly-Si TFTs play an important role for panel fabrications, enhancing the integration of both active matrix and peripheral driving circuitry on the same substrate. However, poly-Si TFTs lead to some poor effects, like large off-state currents, kink effect and hot carrier effect. These effects are mainly due to the high lateral electric field intensity near the drain, so it is necessary to alleviate the electric field intensity for improving those problems mentioned-above. We use TSUPREM-4 to simulate the TFT structures and operate MEDICI to simulate the electri

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41

Raghuraman, Mathangi. "Threshold Voltage Shift Compensating Circuits in Non-Crystalline Semiconductors for Large Area Sensor Actuator Interface." Thesis, 2014. http://etd.iisc.ac.in/handle/2005/3176.

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Thin Film Transistors (TFTs) are widely used in large area electronics because they offer the advantage of low cost fabrication and wide substrate choice. TFTs have been conventionally used for switching applications in large area display arrays. But when it comes to designing a sensor actuator system on a flexible substrate comprising entirely of organic and inorganic TFTs, there are two main challenges – i) Fabrication of complementary TFT devices is difficult ii) TFTs have a drift in their threshold voltage (VT) on application of gate bias. Also currently there are no circuit simulators in

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"Thin Film Transistor Control Circuitry for MEMS Acoustic Transducers." Master's thesis, 2012. http://hdl.handle.net/2286/R.I.15984.

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abstract: ABSTRACT This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10 - 100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexibl

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Chiou, Chi-Ming, and 邱啟明. "The method for checking alignment accuracy of a thin film transistor (TFT) by TEG test." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/44027398025017740963.

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碩士<br>中原大學<br>電子工程研究所<br>100<br>Today’s TFT LCD Panel Makers use optical measurement to measure the distance of patterns exposed by two different masks to present the alignment accuracy of two mask . But it is hard to do a lot of alignment accuracy check，because the optical measurement’s tact time is very long for each inspection . This article mainly introduced the method for checking alignment accuracy of a thin film transistor (TFT)，the switch is using the Mask Overlap relations to form a open or non-open circuit and combine the Array TEG(Test Element Group) for checking alignment accuracy.

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Lai, Erh-Kun, and 賴二琨. "Process Integration of 3D Thin Film Transistor (TFT) NAND Flash and Resistive Random Access Memory." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6jcdv2.

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Peng, Yu-Shen, та 彭昱燊. "Process and Structure Design of Microcrystalline Silicon Thin-Film-Transistors (μC-Si TFTs)". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57982851018671873312.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>98<br>Microcrystalline silicon thin-film-transistors (μC-Si TFTs) have been widely studied. Due to better device characteristic, and large area growth using a lower temperature process, compared to amorphous silicon thin-film-transistors, it has larger electron field mobility and lower energy band gap. Recently, it has been believed can substitute for the a-Si:H TFTs on large substrate area liquid crystal displays application status. However, μC-Si TFTs has some unavoidable problems, such as, large leakage current, non-uniform on fabrication, and worse device charact

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Chuang, Shu-Ya, and 莊淑雅. "A Study of Device Characteristics and Applications of Polysilicon Thin Film Transistors(TFTs)." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/90113193098412417917.

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碩士<br>國立交通大學<br>電子研究所<br>82<br>In this thesis, the poly-Si TFTs devices are fabricated by conventional standard CMOS and BiCMOS processes. The char- acteristics and electrical parameters of the devices have been obsreved and studied, including small dimension effect and off- current behavior. And the gate-controlled mobility is also characterized and explained. These CMOS/BiCMOS com- patible poly-Si TFTs can be used in the situation where chip area reduction of circuits is a very important

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Raghuraman, Mathangi. "Threshold Voltage Shift Compensating Circuits in Non-Crystalline Semiconductors for Large Area Sensor Actuator Interface." Thesis, 2014. http://hdl.handle.net/2005/3176.

Full text

Abstract:

Thin Film Transistors (TFTs) are widely used in large area electronics because they offer the advantage of low cost fabrication and wide substrate choice. TFTs have been conventionally used for switching applications in large area display arrays. But when it comes to designing a sensor actuator system on a flexible substrate comprising entirely of organic and inorganic TFTs, there are two main challenges – i) Fabrication of complementary TFT devices is difficult ii) TFTs have a drift in their threshold voltage (VT) on application of gate bias. Also currently there are no circuit simulators in

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Chen, Lei-Guang, and 陳雷光. "A LTPS (Low temperature polysilicon) TFT (Thin-film transistor) Chip for Dielectrophoretic Manipulation and Bio-detection." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/12593496600019510167.

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碩士<br>國立清華大學<br>電子工程研究所<br>98<br>This study has successfully used LTPS TFT process technology to design a bio chip that can perform dielectrophoretic (DEP) manipulation and optical detection. The LTPS process has the benefit of less post-processing steps required than the CMOS (complementary metal oxide semiconductor) process to realize the chip. In addition, the process can provide a large chip area at low cost. Reliability, however, is the main issue that the LTPS process has to improve. The basic principle of DEP force and its mathematical model will be presented. CFD-RC software is utilize

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Rajachidambaram, Jaana Saranya. "Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications." Thesis, 2011. http://hdl.handle.net/1957/26517.

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Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter deposition. In this study, the effect of both deposition and post annealing conditions have been evaluated in regards to film structure, composition, surface contamination, and device performance. Both the variation of oxygen p

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Chung, Lung-Sheng, and 鍾隆陞. "The Ten Thin Film Transistor-Liquid Crystal Display(TFT-LCD) Manufacturers of Operating Analysis and Performance Assessment." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/99099373048102261857.

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碩士<br>開南大學<br>專案管理研究所<br>98<br>With the trend of rapid development in the digital information of the world，the product demand of information industry on light、thin and less-electricity leads the accelerated development of global thin film transistor-Liquid Crystal Display(TFT-LCD) manufacturers. Moreover, the main production line concentrates in South Korea and Taiwan and the sales volume of the global total output value is 83% approximately in the existing big factory of the thin film transistor-Liquid Crystal Display (TFT-LCD). TFT-LCD display has already been a main product of the informati

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