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Journal articles on the topic 'Thin Film Transistors (TFT)'

Author: Grafiati

Published: 6 September 2023

Last updated: 31 July 2025

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1

Kavindra, Kandpal, and Gupta Navneet. "Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends." Bulletin of Electrical Engineering and Informatics 5, no. 2 (2016): 205–12. https://doi.org/10.11591/eei.v5i2.530.

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This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters. Effect of high – dielectrics, grain boundaries, trap densities, and threshold voltage

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2

Piyush, Eklavya, Debnath Nirmalya, Vaishnav Shrey, and N. Ramavenkateswaran. "Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics." International Journal of Engineering and Advanced Technology (IJEAT) 9, no. 5 (2020): 270–73. https://doi.org/10.35940/ijeat.E9477.069520.

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The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not suppor

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3

Park, Hyun-Woo, Sera Kwon, Aeran Song, Dukhyun Choi, and Kwun-Bum Chung. "Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor." Journal of Materials Chemistry C 7, no. 4 (2019): 1006–13. http://dx.doi.org/10.1039/c8tc03585g.

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The key to full understanding of the degradation mechanism of oxide thin film transistors (Ox-TFTs) by gate bias stress is to investigate dynamical changes of the electron trap site at the channel region while a real-time gate bias is applied to the actual thin film transistor (TFT) structure.

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4

Manoli, Kyriaki, Preethi Seshadri, Mandeep Singh, et al. "Solvent-gated thin-film-transistors." Physical Chemistry Chemical Physics 19, no. 31 (2017): 20573–81. http://dx.doi.org/10.1039/c7cp03262e.

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TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.

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5

Pokharel, Peshal, and Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics." Himalayan Journal of Science and Technology 6, no. 1 (2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.

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A thin-film transistor (TFT) is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) made by coating an insulating substrate with layers of an active semiconductor layer, metallic contacts, and the dielectric layer. FET transistors consist of three main components: source, gate, and drain. The main objective of the work is to fabricate the channel component by growing the ZnO nanostructure on the glass substrate using spin coating and spray pyrolysis methods. Thin films of zinc oxide (ZnO) were deposited on glass substrates by spin coating techniques from a precursor so

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6

Lu, You-zheng, An-Thung Cho, Lu Mao, et al. "P‐5.26: Stress Model Simulation of TFT Reliability for G8.6 Large‐size TFT‐LCDs." SID Symposium Digest of Technical Papers 56, S1 (2025): 1128–31. https://doi.org/10.1002/sdtp.19015.

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In this work, Time‐sampling Simulation and lifetime calculation are both used to predict TFT reliability. The thin‐film transistor can be used to simulate with the electrical properties of TFT devices according to the parameters measured. Different insulating layer design of TFT device has been investigated by stress model simulation and the TFT device lifetime reliability. We propose a device model for a‐Si thin‐film transistors under positive bias temperature stress (PBTS). This model is a function of the channel interface electric field, and device simulations using this model reproduce mea

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7

Kuo, Yue. "(Invited) Oxide TFT Applications: Principles and Challenges." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1285. http://dx.doi.org/10.1149/ma2022-02351285mtgabs.

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The main advantage of the thin film transistor (TFT) is that it can be fabricated on non-wafer substrate independent of the size, flexibility, and morphology. All composing films of the TFT are deposited at the low temperature. Therefore, TFTs can be applied to a broad range of consumer, biological, chemical, and optical products that are difficult to fabricate with the wafer based MOSFETs. There are many reports on a-Si:H and poly-Si TFT applications in displays, imagers, sensors, drivers, flexible electronics, and circuits (1,2). In principle, oxide TFTs can be applied to similar products. H

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8

Mądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores, and Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes." MRS Advances 1, no. 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.

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ABSTRACTThin-film transistors (TFT) were fabricated at a room-temperature (RT) with zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. To isolate the gate oxide and gate electrode influence on the device performance, common gate configuration on a commercial substrate with thermal SiO2 (100 nm) was selected. A threshold voltage (VTh) of 10 V and ION/IOFF ratio of 1 × 10-5 were obtained. Once the reference data was taken transistors were exposed to glycerol. Temporary changes in device characteristics were observed due to the influence of glycerol, a low conductivity medium.

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9

Lee, Sungsik. "Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors." Scientific Reports 6, no. 22567 (2016): 1–9. https://doi.org/10.1038/srep22567.

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The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the surface potential is approximately twice the bulk potential. In contrast, the conduction threshold in accumulation mode transistors, such as the oxide thin film transistor (TFT), has remained ambiguous in view of the complex density of states distribution in the mobility gap. This paper quantitatively describes the conduction threshold of accumulation-mode InGaZnO TFTs as the transition of the Fermi level from deep to tail states, which can be defined as the juxtaposition of linear and

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10

Gu, Guiru, Yunfeng Ling, Runyu Liu, et al. "All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response." Journal of Nanotechnology 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/823680.

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We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band stru

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11

Chen, Yuting, Xinlv Duan, Xueli Ma, et al. "Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel." Journal of Semiconductors 45, no. 7 (2024): 072301. http://dx.doi.org/10.1088/1674-4926/24010032.

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Abstract In–Ga–Zn–O (IGZO) channel based thin-film transistors (TFT), which exhibit high on–off current ratio and relatively high mobility, has been widely researched due to its back end of line (BEOL)-compatible potential for the next generation dynamic random access memory (DRAM) application. In this work, thermal atomic layer deposition (TALD) indium gallium zinc oxide (IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition (ALD) process. In additi

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12

Yan, Xingzhen, Kai Shi, Xuefeng Chu, Fan Yang, Yaodan Chi, and Xiaotian Yang. "Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors." Coatings 9, no. 10 (2019): 619. http://dx.doi.org/10.3390/coatings9100619.

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The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annea

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13

Nagamatsu, Shuichi, Masataka Ishida, Shougo Miyajima, and Shyam S. Pandey. "P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension." Materials 12, no. 21 (2019): 3643. http://dx.doi.org/10.3390/ma12213643.

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A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT

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14

Furuta, Mamoru, and Yusaku Magari. "(Invited, Digital Presentation) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1266. http://dx.doi.org/10.1149/ma2022-02351266mtgabs.

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Transparent metal oxide semiconductors (OSs) have been extensively investigated for use as the active channel layer of thin film transistors (TFTs) for next-generation flat-panel displays, nonvolatile memories, image sensors, and pH sensors, to name a few. Among OSs, the amorphous In–Ga–Zn–O (IGZO) has attracted particular attention for TFT applications owing to its high field effect mobility (μFE) of more than 10 cm2V−1s−1, steep subthreshold swing (S.S.), extremely low off-state current, large-area uniformity, and good bias stress stability. Although the μFE of an IGZO TFT is approximately o

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15

Pons Flores, Cesar Adrian, Israel Mejía, Manuel Quevedo-Lopez, Clemente Alvarado Beltran, and Luis Martín Reséndiz. "Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors." Superficies y Vacío 30, no. 3 (2017): 46–50. http://dx.doi.org/10.47566/2017_syv30_1-030046.

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We analyze the influence of three combined effects on the contact resistance in organic- based thin film transistors: a) the active layer thickness, b) device architecture and c) semiconductor degradation. Transfer characteristics and parasitic series resistance were analyzed in devices with three different active layer thicknesses (50, 100 and 150 nm) using top contact (TC) and bottom contact (BC) thin film transistor (TFT) configurations. In both configurations, the lowest contact resistance (2.49 × 106 ?) and the highest field-effect mobility (4.8 × 10-2 cm2/V·s) was presented in devices wi

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16

Kang, Tsung-Kuei, Yu-Yu Lin, Han-Wen Liu, et al. "Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor." Membranes 11, no. 10 (2021): 758. http://dx.doi.org/10.3390/membranes11100758.

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By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indica

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17

Xu, Wangying, Chuyu Xu, Zhibo Zhang, et al. "Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors." Nanomaterials 12, no. 16 (2022): 2880. http://dx.doi.org/10.3390/nano12162880.

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We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-ar

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18

Shin, Seung Won, Jae Eun Cho, Hyun-Mo Lee, Jin-Seong Park, and Seong Jun Kang. "Photoresponses of InSnGaO and InGaZnO thin-film transistors." RSC Advances 6, no. 87 (2016): 83529–33. http://dx.doi.org/10.1039/c6ra17896k.

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ITGO TFT were fabricated to study the photoresponses of indium-based oxide semiconductors. We found that the increased amount and low electron binding energy of indium can improve the recovery time of ITGO TFTs.

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19

Shashi, Kant Dargar, Padampat Singhania University Sir, Bharti Santosh, and Nyati Abha. "Performance Evaluation of GaN Based Thin Film Transistor using TCAD Simulation." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 1 (2017): 144–51. https://doi.org/10.11591/ijece.v7i1.pp144-151.

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As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10 7 ~ 8.3×10

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20

Yang, X., C. Wang, C. Zhao, et al. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass." Key Engineering Materials 428-429 (January 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.

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In our paper, we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully, the Ion/off ratio is ~104.

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21

Liu, Xianzhe, Ao Chen, Weigang Zhu, et al. "20.1: Invited Paper: Research on Oxide Thin Film Transistors for Wearable Sensors." SID Symposium Digest of Technical Papers 54, S1 (2023): 151–52. http://dx.doi.org/10.1002/sdtp.16249.

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With the rapid development of the Internet of Things, sensors as an important foundation in the era of smart interconnection, have a significant potential in the emerging fields of smart home, wearable devices, and smart mobile terminals. Flexible sensor has been attracting a great attention due to its portability, miniaturization and long endurance. The high consumption and signal crosstalk are urgent issues for the high‐integration sensing array. These issues could be effectively addressed by active‐matrix thin film transistors (TFT) backplane. In this work, the feasibility of oxide TFT for

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22

Ning, Honglong, Xuan Zeng, Hongke Zhang, et al. "Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature." Membranes 12, no. 1 (2021): 29. http://dx.doi.org/10.3390/membranes12010029.

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Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

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23

Kandpal, Kavindra, and Navneet Gupta. "Perspective of zinc oxide based thin film transistors: a comprehensive review." Microelectronics International 35, no. 1 (2018): 52–63. http://dx.doi.org/10.1108/mi-10-2016-0066.

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Purpose The purpose of this paper is to present a comprehensive review on development and future trends in zinc oxide thin film transistors (ZnO TFTs). This paper presents the development of TFT technology starting from amorphous silicon, poly-Si to ZnO TFTs. This paper also discusses about transport and device modeling of ZnO TFT and provides a comparative analysis with other TFTs on the basis of performance parameters. Design/methodology/approach It highlights the need of high–k dielectrics for low leakage and low threshold voltage in ZnO TFTs. This paper also explains the effect of grain bo

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24

Wang, Xiao, and Ananth Dodabalapur. "Modeling of thin-film transistor device characteristics based on fundamental charge transport physics." Journal of Applied Physics 132, no. 4 (2022): 044501. http://dx.doi.org/10.1063/5.0083876.

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A model is described that enables the calculation of thin-film transistor (TFT) characteristics starting from fundamental considerations of charge transport. Starting from scattering mechanisms and trap distribution in a semiconductor, electric field and charge density distributions are calculated along the channel length direction. Output and transfer characteristics of a TFT can be calculated at any temperature. The model is quasi-two-dimensional and is based on multiple trap and release transport in the semiconductor active layer. Importantly, the charge transport models that constitute the

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25

Hu, Shiben, Kuankuan Lu, Honglong Ning, et al. "Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance." Nanomaterials 11, no. 2 (2021): 522. http://dx.doi.org/10.3390/nano11020522.

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In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film depositi

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26

Wang, Jieyang, Liang Guo, Xuefeng Chu, et al. "Electrical Performance of ZTO Thin-Film Transistors and Inverters." Micromachines 16, no. 7 (2025): 751. https://doi.org/10.3390/mi16070751.

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In this study, zinc–tin oxide (ZTO) thin films were prepared via radio-frequency magnetron sputtering to examine the influence of annealing temperature on the performance of thin-film transistors (TFTs) and their resistive-load inverters. The findings reveal that annealing modulates the concentration and spatial distribution of oxygen vacancies (VO), which directly affect carrier density and interface trap density, ultimately determining the electrical behavior of inverters. At the optimal annealing temperature of 600 °C, the VO concentration was effectively moderated, resulting in a TFT with

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27

Bu, Qianqian, Dan Wang, Sha Liu, et al. "P‐1.34: Recent Developments in Vertial Amorphous Oxide Semiconductor (AOS) Thin‐Film Transistor (TFT) Devices." SID Symposium Digest of Technical Papers 56, S1 (2025): 815–19. https://doi.org/10.1002/sdtp.18939.

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With the rapid development of display technologies, the demand for high‐performance thin‐film transistors (TFTs) is increasing day by day. This paper focuses on the latest progress of vertical amorphous oxide semiconductor (AOS) thin‐film transistor (TFT) devices, with an emphasis on key research directions such as device structure, active layer processes, and spacer layer materials. Looking ahead, AOS TFTs are expected to achieve broader applications in the fields of flexible displays, transparent electronics, and large‐area integration. Meanwhile, as the fabrication processes are continuousl

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Zhang, Xiaohui, Yaping Li, Yanwei Li, Xinwang Xie, and Longhai Yin. "Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing." Micromachines 15, no. 2 (2024): 225. http://dx.doi.org/10.3390/mi15020225.

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We applied excimer laser annealing (ELA) on indium-zinc oxide (IZO) and IZO/indium-gallium-zinc oxide (IGZO) heterojunction thin-film transistors (TFTs) to improve their electrical characteristics. The IZO and IZO/IGZO heterojunction thin films were prepared by the physical vapor deposition method without any other annealing process. The crystalline state and composition of the as-deposited film and the excimer-laser-annealed films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. In order to further enhance the electrical performance of TFT, we constructed a dual-hetero

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29

Lin, Pujian, Yecheng Yang, Yujia Gong, et al. "9‐2: Compact Model for Thin‐Film Transistors with Capacitance Frequency Dispersion." SID Symposium Digest of Technical Papers 55, S1 (2024): 84–87. http://dx.doi.org/10.1002/sdtp.17003.

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In thin‐film transistors (TFTs), issues such as interface states may lead to unstable device performance and complex physical phenomena, such as frequency dispersion effects. This paper establishes a three‐terminal TFT compact model capable of replicating capacitance dispersion phenomena and directly applying to SPICE circuit simulations. The model decomposes the transistor's capacitance frequency response into the superposition of responses from different electronic states. The different electronic states are emulated by parallel branches, each composed of voltage‐dependent capacitance and re

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30

Tayoub, Hadjira, Baya Zebentouta, and Zineb Benamara. "TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor." Pakistan Journal of Scientific & Industrial Research Series A: Physical Sciences 63, no. 2 (2020): 89–93. http://dx.doi.org/10.52763/pjsir.phys.sci.63.2.2020.89.93.

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 Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD's) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer's thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like the threshold voltage, the mobility and to evaluate the device performance. The device was

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31

Jialong, Wen. "A review of RFID Tag based on TFT." Applied and Computational Engineering 25, no. 1 (2023): 292–96. http://dx.doi.org/10.54254/2755-2721/25/20230781.

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Radiofrequency identification is a non-contact wireless identification technology that uses wireless radio frequency signals for specific target identification or data transmission and has broad application prospects in the period of the Internet of Things. A thin film transistor is a kind of field-effect transistor which is widely applied in the field of flat panel display, but it can also be applied to RFID technology. This paper first introduces the development history of RFID technology and explains the working principle, then briefly describes the structure and characteristics of TFT. Aft

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32

Wager, John F. "(Invited) Thin-Film Transistor Accumulation-Mode Modeling." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1257. http://dx.doi.org/10.1149/ma2022-02351257mtgabs.

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Analytical equations are developed for electrostatic assessment of accumulation-mode thin-film transistors (TFTs) so that potential, electric field, and accumulation layer free electron concentration profiles may be generated. Additionally, equations are derived for plotting TFT trap density versus surface potential, based on accurate extraction of the channel mobility as a function of gate voltage. A key factor in formulating these device physics equations is distinguishing between a ‘long-base’ or ‘short-base’ channel thickness. A ‘long-base’ (‘short-base’) channel thickness is defined to oc

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33

Al-Jawhari, H. A., J. A. Caraveo-Frescas, and M. N. Hedhili. "Tunable Performance of P-Type Cu₂O/SnO Bilayer Thin Film Transistors." Advances in Science and Technology 93 (October 2014): 260–63. http://dx.doi.org/10.4028/www.scientific.net/ast.93.260.

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Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a cert

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34

Matsukawa, Kimihiro, Mitsuru Watanabe, Takashi Hamada, Takashi Nagase, and Hiroyoshi Naito. "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors." International Journal of Polymer Science 2012 (2012): 1–10. http://dx.doi.org/10.1155/2012/852063.

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Printable organic thin-film transistor (O-TFT) is one of the most recognized technical issues nowadays. Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ), and its applications for the gate-insulating layer of O-TFTs are introduced in this paper. PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed. The PMSQ film contains no mobile ionic impurit

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35

Singh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.

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Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and

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Su, Jinbao, Hui Yang, Weiguang Yang, and Xiqing Zhang. "Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering." Journal of Vacuum Science & Technology B 40, no. 3 (2022): 032201. http://dx.doi.org/10.1116/6.0001702.

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A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is transparent with an average optical transmittance over 80% in the visible range. The TFT shows excellent performances with a saturation mobility ( μSAT) of 41.0 cm2/V s, a threshold voltage ( VTH) of 2.4 V, a subthreshold swing of 0.5 V/decade, and a current on/off ratio ( ION /IOFF) of 6.8 × 108. T

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Yen, Te Jui, Albert Chin, and Vladimir Gritsenko. "Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer." Nanomaterials 11, no. 1 (2021): 92. http://dx.doi.org/10.3390/nano11010092.

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Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor’s turn-on subthreshold slopes (SS) of 526

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Jung, Seyeon, Taehoon Sung, Sein Lee, and J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.

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Recently, amorphous metal-oxide semiconductors (AOSs) such as indium gallium zinc oxide (IGZO) have attracted great attention with their lower power consumption and higher mobility than amorphous silicon in the display field. However, the threshold voltage (Vth) shift of IGZO thin film transistor (TFT) caused by their poor reliability leads to the drop panel luminance. Therefore, improvement of IGZO TFT reliability is necessary, which is largely influenced by oxygen vacancy and hydrogen. In particular, hydrogen has shown different roles inside the IGZO active layer by hydrogen concentration. A

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Shuib, Umar Faruk, Khairul Anuar Mohamad, Afishah Alias, Tamer A. Tabet, Bablu K. Gosh, and Ismail Saad. "Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation." Advanced Materials Research 1107 (June 2015): 514–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.514.

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As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel

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Yang, Huan, Bo Wang, Wenting Dong, et al. "P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors." SID Symposium Digest of Technical Papers 54, S1 (2023): 461–63. http://dx.doi.org/10.1002/sdtp.16332.

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The energy band dependent mobility in heterojunction amorphous oxide semiconductor thin‐film transistors (TFTs) is investigated. Results indicate that both of the energy band configurations with potential well (PW) and barrier (PB) formation could allow TFT with high‐mobility operation. Specifically, TFT with PW only exhibits high mobility when the gate electric field direction is consistent with that of build‐in electric field in PW, whereas TFT with PB could exhibit high mobility no matter what the electric field direction configuration is.

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Shur, Michael, Xueqing Liu, and Trond Ytterdal. "(Invited) Improved Thin Film Transistor Model Predicts TFT Operation in the THz Range." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1256. http://dx.doi.org/10.1149/ma2022-02351256mtgabs.

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Novel Thin-film-transistor (TFT) TFT materials such as ZnO, InGaZnO, AMO-CNT, and organic materials dramatically improved the achieved and projected TFT performance. The low field mobility of oxide materials has reached values comparable to those for short-channel Si CMOS. The effects related to electron inertia and electron density oscillations in field effect transistors channels (FETs) diminish the role of the low field mobility as a figure of merit in short channel devices making the performance gap between TFTs and Si CMOS smaller enabling high frequency TFT applications even reaching sub

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Md Sin, N. D., Mohamad Hafiz Mamat, and Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application." Advanced Materials Research 667 (March 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.

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The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR sp

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Muthusamy, Sasikala, Sudhakar Bharatan, Sinthamani Sivaprakasam, and Ranjithkumar Mohanam. "Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors." Materials 17, no. 21 (2024): 5153. http://dx.doi.org/10.3390/ma17215153.

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ZnO thin films were deposited using RF sputtering by varying the argon:oxygen gas flow rates and substrate temperatures. Structural, optical and electrical characterization of ZnO thin films were systematically carried out using X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Hall measurements. Film deposited at room temperature and annealed at 300 °C exhibited low O2 incorporation with localized defects and a high percentage of Zn interstitials. A large crystalline size and fewer grain boundaries resulted in a hi

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Borchert, James W., Ute Zschieschang, Florian Letzkus, et al. "Flexible low-voltage high-frequency organic thin-film transistors." Science Advances 6, no. 21 (2020): eaaz5156. http://dx.doi.org/10.1126/sciadv.aaz5156.

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The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flex

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Lin, Jium-Ming, Po-Kuang Chang, and Zhong-Qing Hou. "INTEGRATING MICROARRAY PROBES AND AMPLIFIER ON AN ACTIVE RFID TAG FOR BIOSENSING AND MONITOR SYSTEM DESIGN." Biomedical Engineering: Applications, Basis and Communications 21, no. 06 (2009): 421–25. http://dx.doi.org/10.4015/s1016237209001556.

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This research provides a microarray bio-probe device, integrated with Thin-Film-Transistor (TFT) amplifier formed of top-gate MOS (Metal-Oxide Semiconductor) transistors on an active RFID tag, to improve the signal-to-noise (S/N) ratio and impedance matching problems. The bio-probe device can be disposed to conform to the profile of a living body's portion so as to improve the electrical contact property.

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Chen, Wei-De, Sheng-Po Chang, and Wei-Lun Huang. "Characteristics of MgIn2O4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer." Coatings 10, no. 12 (2020): 1261. http://dx.doi.org/10.3390/coatings10121261.

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In this work, an MgIn2O4 (MIO) thin film transistor (TFT) with a bottom gate structure was fabricated. The MIO channel layer was deposited by RF sputtering using a single MgIn2O4 target. The performance of MIO TFT was highly related to oxygen vacancies. As-deposited MIO TFT showed a low field-effect mobility due to doping of Mg. An MgO buffer layer was introduced to enhance the mobility of MIO TFT due to improvement of the interface with the channel layer. In addition, oxygen vacancies in the MIO channel were suppressed because of oxygen diffusion from the buffer layer. MIO TFT with a 5 nm MgO

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Lee, Won-Yong, Hyunjae Lee, Seunghyun Ha, et al. "Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor." Electronics 9, no. 3 (2020): 523. http://dx.doi.org/10.3390/electronics9030523.

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Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO2 TFT was characterized by a field effect mobility, a subthreshold swing, and Ion/Ioff

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Wang, Chong, Liang Guo, Mingzhou Lei, et al. "Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors." Nanomaterials 12, no. 14 (2022): 2397. http://dx.doi.org/10.3390/nano12142397.

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A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on t

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Kuo, Yue. "Thin Film Transistors with Layered a-Si:H Structure." MRS Proceedings 377 (1995). http://dx.doi.org/10.1557/proc-377-701.

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ABSTRACTThin film transistors TFTs with the layered a-Si:H structure are presented and discussed. Compared with the conventional single layer a-Si:H TFT, transistor characteristics of this new structure can be superior or inferior, depending on the deposition condition and number of the bulk (non-interface) a-Si:H layers. The mechanism influencing transistor characteristics is discussed. Changes of these TFTs' characteristics are not significant, e.g., the mobility varies within 20%. More data are being collected to verify the statistical significance of this kind of TFT.

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"Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics." International Journal of Engineering and Advanced Technology 9, no. 5 (2020): 270–73. http://dx.doi.org/10.35940/ijeat.e9477.069520.

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The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not suppor

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