Log in

Relevant bibliographies by topics / Time-Dependent dielectric breakdown (TDDB)

Contents

Journal articles

Academic literature on the topic 'Time-Dependent dielectric breakdown (TDDB)'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Time-Dependent dielectric breakdown (TDDB).'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Time-Dependent dielectric breakdown (TDDB)"

1

McPHERSON, J. W. "PHYSICS AND CHEMISTRY OF INTRINSIC TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SiO2 DIELECTRICS." International Journal of High Speed Electronics and Systems 11, no. 03 (2001): 751–87. http://dx.doi.org/10.1142/s0129156401000964.

Full text

Abstract:

A molecular physics-based complementary model, which includes both field-induced and current-induced degradation mechanisms, is used to help resolve the E versus 1/E time-dependent dielectric breakdown (TDDB) model controversy that has existed for many years. The Complementary Model indicates either the E or 1/E–TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths <3 eV, the bond breakage rate is generally dominated by field-enhanced thermal processes at lower fields and elevated temperatures where the E-model is valid. At

APA, Harvard, Vancouver, ISO, and other styles

2

Lu, Feng Ming, Jiang Shao, Xiao Yu Liu, and Xing Hao Wang. "Research on TDDB Effect in High-k Materials." Advanced Materials Research 548 (July 2012): 203–8. http://dx.doi.org/10.4028/www.scientific.net/amr.548.203.

Full text

Abstract:

With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relatio

APA, Harvard, Vancouver, ISO, and other styles

3

Wahab, Mohd Zahrin A., Azman Jalar, Shahrum Abdullah, and Hazian Mamat. "Characterization of 0.5 µm BiCMOS Gate Oxide Using Time Dependent Dielectric Breakdown Test." Advanced Materials Research 97-101 (March 2010): 40–44. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.40.

Full text

Abstract:

This paper presents Time Dependent Dielectric Breakdown (TDDB) testing of gate oxide on 0.5µm BiCMOS Technology. The gate oxide quality for the technology has been investigated and furthermore to qualify the whole set up of the foundry from the process, equipment, cleanroom control and raw material used to produce high quality gate oxide and hence good quality of BiCMOS devices. TDDB test is the most widely used testing to check the quality of gate oxide and in this paper the TDDB test done on MOS capacitors fabricated using 0.5 µm BiCMOS Technology. Seven consecutive qualification lots have b

APA, Harvard, Vancouver, ISO, and other styles

4

Kozono, Kohei, Takuji Hosoi, Yusuke Kagei, et al. "Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy." Materials Science Forum 645-648 (April 2010): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.821.

Full text

Abstract:

The dielectric breakdown mechanism in 4H-SiC metal-oxide-semiconductor (MOS) devices was studied using conductive atomic force microscopy (C-AFM). We performed time-dependent dielectric breakdown (TDDB) measurements using a line scan mode of C-AFM, which can characterize nanoscale degradation of dielectrics. It was found that the Weibull slope () of time-to-breakdown (tBD) statistics in 7-nm-thick thermal oxides on SiC substrates was much larger for the C-AFM line scan than for the common constant voltage stress TDDB tests on MOS capacitors, suggesting the presence of some weak spots in the o

APA, Harvard, Vancouver, ISO, and other styles

5

Tan, T. L., C. L. Gan, A. Y. Du, Y. C. Tan, and C. M. Ng. "Delamination-induced dielectric breakdown in Cu/low-k interconnects." Journal of Materials Research 23, no. 6 (2008): 1802–8. http://dx.doi.org/10.1557/jmr.2008.0222.

Full text

Abstract:

Delamination at an interface with the weakest adhesion strength, which is found to be between the SiC(N) capping layer and the SiOCH low-k dielectric, is a potential failure mechanism contributing to time-dependent dielectric breakdown (TDDB) reliability. Bond breaking at that interface is believed to be driven by a field-enhanced thermal process and catalyzed by leakage current through the capping layer based on physical analyses and TDDB measurements. Delamination is found to be easier in terminated tips and corners than in parallel comb lines due to the layout orientation of the Cu lines. M

APA, Harvard, Vancouver, ISO, and other styles

6

Chbili, Zakariae, Kin P. Cheung, Jason P. Campbell, et al. "Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors." Materials Science Forum 858 (May 2016): 615–18. http://dx.doi.org/10.4028/www.scientific.net/msf.858.615.

Full text

Abstract:

In this paper we report TDDB results on SiO2/SiC MOS capacitors fabricated in a matured production environment. A key feature is the absence of early failure out of over 600 capacitors tested. The observed field accelerations and activation energies are higher than what is reported on SiO2/Si of similar oxide thickness. The great improvement in oxide reliability and the deviation from typical SiO2/SiC observations are explained by the quality of the oxide in this study.

APA, Harvard, Vancouver, ISO, and other styles

7

Bandoh, Akira, Kenji Suzuki, Yoshihiko Miyasaka, Hiroshi Osawa, and Takayuki Sato. "Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers." Materials Science Forum 778-780 (February 2014): 611–14. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.611.

Full text

Abstract:

The step-bunching dependence of the lifetime of metal–oxide–semiconductor capacitors on 4° off-axis 4H-SiC epitaxial wafers was investigated. The effects of the C/Si ratios in epitaxial growth and the substrate properties were examined. Step-bunching was observed at the base of triangle or trapezoid defects. Step-bunching decreased as the C/Si ratio was reduced. Time-dependent dielectric breakdown (TDDB) measurements showed that the locations of short lifetime breakdowns closely matched step-bunching positions. TDDB measurements of four different commercial substrates showed clear differences

APA, Harvard, Vancouver, ISO, and other styles

8

Park, Kiron, Keonho Park, Sujin Im, SeungEui Hong, Kwonjoo Son, and Jongwook Jeon. "Development of an Advanced TDDB Analysis Model for Temperature Dependency." Electronics 8, no. 9 (2019): 942. http://dx.doi.org/10.3390/electronics8090942.

Full text

Abstract:

This paper proposes a hybrid model to describe the temperature dependence of the time-dependent dielectric breakdown (TDDB) phenomenon. TDDB can be expressed in terms of two well-known representative degradation mechanisms: The thermo-chemical (TC) mechanism and the anode hole injection (AHI) mechanism. A single model does not account for the measured lifetime, due to TDDB under different temperature conditions. Hence, in the proposed model, two different degradation mechanisms are considered simultaneously in an appropriate manner to describe the trap generation in the dielectric layer. The p

APA, Harvard, Vancouver, ISO, and other styles

9

Lichtenwalner, Daniel J., Shadi Sabri, Edward van Brunt, et al. "Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers." Materials Science Forum 963 (July 2019): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.963.745.

Full text

Abstract:

Gate oxide reliability on silicon carbide MOSFETs and large-area SiC N-type capacitors was studied for devices fabricated on 150mm SiC substrates. Oxide lifetime was measured under accelerated stress conditions using constant-voltage time-dependent dielectric breakdown (TDDB) testing, or ramped-voltage breakdown (RBD) testing. TDDB results from 1200V Gen3 MOSFETs reveal a field acceleration parameter of about 35 nm/V, similar to values reported for SiO2 on silicon. Temperature-dependent RBD tests of large capacitors from 25°C to 200°C reveal an apparent activation energy of 0.24eV, indicating

APA, Harvard, Vancouver, ISO, and other styles

10

Shen, Jingyu, Can Tan, Rui Jiang, et al. "The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection." Advances in Condensed Matter Physics 2018 (May 20, 2018): 1–6. http://dx.doi.org/10.1155/2018/5483756.

Full text

Abstract:

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of

APA, Harvard, Vancouver, ISO, and other styles

More sources

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!