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Relevant bibliographies by topics / Tin-doped indium oxide (ITO)

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Academic literature on the topic 'Tin-doped indium oxide (ITO)'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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Journal articles on the topic "Tin-doped indium oxide (ITO)"

1

Prajuabwan, Pakorn, Sunit Rojanasuwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "Exciton Dissociation at Indium Tin Oxide/Indium Doped Zinc Phthalocyanine Interface." Applied Mechanics and Materials 313-314 (March 2013): 140–47. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.140.

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A new intercalation of Indium and zinc phthalocyanine(ZnPc) thin film is developed by using thermal co-evaporation technique. The exciton dissociation at the interface of Indium Tin Oxide(ITO) electrode and Indium doped ZnPc upon laser irradiation is observed through the transient photovoltage measurement technique in comparison with the interfacial exciton dissociation occurred at ITO/pristine ZnPc interface. The occurring transient photovoltage spike is regarded as the effect of exciton dissociation at ITO/In-doped ZnPc interface and depends on the amount of free carrier separation by built-in field or charge carrier concentration according to doping ratio. The experiments demonstrate the existence of exciton dissociation at ITO/In-doped ZnPc interface, the direction of charges transfer is that holes are injected to ITO, whereas electrons are left in bulk film. A thin insulating layer of 6 nm thick lithium fluoride(LiF) is inserted between ITO and In-doped ZnPc to prevent the exciton dissociation at ITO/In-doped ZnPc interface and insist on the phenomenon of interfacial exciton dissociation. Further photoelectron spectroscopy experiments prove that In-doped ZnPc is hole transport material.

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2

Hongsakul, Thunchanok, Supan Yodyingyong, Tshering Nidup, and Darapond Triampo. "Effect of Crystallinity on Near Infrared Reflectance of Indium TiN Oxide Nanorice-Particles." Key Engineering Materials 824 (October 2019): 168–75. http://dx.doi.org/10.4028/www.scientific.net/kem.824.168.

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Tin-doped indium oxide or indium tin oxide (ITO) has many promising uses in applications, such as, transparent conductive oxides, flat panel displays, and energy-saving windows. In this work, nanorice particles of tin-doped indium oxide (ITO) were obtained by a simple sol-gel method. Indium salts and stannous fluoride precursors were mixed ultrasonically in an aqueous medium. The crystallinity and chemical bonds were studied by X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FTIR). FTIR spectra before calcination showed the characteristic bonds of In–OH and Sn–OH at 1160 cm-1 and 1380 cm-1, respectively. After calcination at 400°C for 2 h, these characteristic bonds disappeared, confirming the formation of crystalline oxide. Moreover, scanning electron micrographs revealed well-defined structure, called nanorice, emerging from controlled crystal growth at 85°C for 90 min. The particle size of ITO was approximately 500 nm in length and diameter of 150 nm. The effect of crystallinity was studied by UV absorbance and NIR reflectance. These demonstrated promising results for use as energy-saving windows.

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Min, Kyungchan, Kyoung Soon Choi, Wook Jin Jeon, Dong Kyu Lee, Sein Oh, Jouhahn Lee, Jae-Young Choi, and Hak Ki Yu. "Hierarchical Ag nanostructures on Sn-doped indium oxide nano-branches: super-hydrophobic surface for surface-enhanced Raman scattering." RSC Advances 8, no. 23 (2018): 12927–32. http://dx.doi.org/10.1039/c8ra01510d.

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4

Quoc, Khuong Anh Nguyen, Hau Thi Hien Vo, Tuan Phan Dinh, Long Giang Bach, and Van Thi Thanh Ho. "Synthesis and Characterization of Advanced Nanomaterials: Tin-Doped Indium Oxide (ITO) and Platinium Deposited on Tin-Doped Indium Oxide (Pt/ITO)." Journal of Nanoscience and Nanotechnology 18, no. 10 (October 1, 2018): 7246–50. http://dx.doi.org/10.1166/jnn.2018.15722.

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5

Wen, Shijie, G. Campet, and J. Portier. "Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide." Active and Passive Electronic Components 14, no. 4 (1992): 191–98. http://dx.doi.org/10.1155/1992/56168.

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The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessary to achieve high electronic mobility in ITO (Indium Tin Oxide).

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6

Li, Luping, Shikai Chen, Jung Kim, Cheng Xu, Yang Zhao, and Kirk J. Ziegler. "Controlled synthesis of tin-doped indium oxide (ITO) nanowires." Journal of Crystal Growth 413 (March 2015): 31–36. http://dx.doi.org/10.1016/j.jcrysgro.2014.12.003.

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7

Guizzardi, Michele, Silvio Bonfadini, Liliana Moscardi, Ilka Kriegel, Francesco Scotognella, and Luigino Criante. "Large scale indium tin oxide (ITO) one dimensional gratings for ultrafast signal modulation in the visible spectral region." Physical Chemistry Chemical Physics 22, no. 13 (2020): 6881–87. http://dx.doi.org/10.1039/c9cp06839b.

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8

Zhang, Xiaojia, Xingqiang Liu, Yupeng Zhang, Rongrong Bao, Dengfeng Peng, Tianfeng Li, Guoyun Gao, Wenxi Guo, and Caofeng Pan. "Rational design of an ITO/CuS nanosheet network composite film as a counter electrode for flexible dye sensitized solar cells." Journal of Materials Chemistry C 4, no. 34 (2016): 8130–34. http://dx.doi.org/10.1039/c6tc02610a.

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9

Sohn, Hong Yong, and Arun Murali. "Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films." Molecules 26, no. 5 (March 7, 2021): 1456. http://dx.doi.org/10.3390/molecules26051456.

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This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

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Heo, Jin Hyuck, Hye Ji Han, Minho Lee, Myungkwan Song, Dong Ho Kim, and Sang Hyuk Im. "Stable semi-transparent CH3NH3PbI3planar sandwich solar cells." Energy & Environmental Science 8, no. 10 (2015): 2922–27. http://dx.doi.org/10.1039/c5ee01050k.

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Semi-transparent MAPbI₃planar sandwich solar cells were fabricated by simply laminating an F doped tin oxide/TiO₂/MAPbI₃/wet hole transporting material with additives and PEDOT:PSS/indium tin oxide (ITO).

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Dissertations / Theses on the topic "Tin-doped indium oxide (ITO)"

1

Zhou, Jianming. "Indium tin oxide (ITO) deposition, patterning, and Schottky contact fabrication /." LInk to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/1717.

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Yavas, Hakan. "Development Of Indium Tin Oxide (ito) Nanoparticle Incorporated Transparent Conductive Oxide Thin Films." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614475/index.pdf.

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Indium tin oxide (ITO) thin films have been used as transparent electrodes in many technological applications such as display panels, solar cells, touch screens and electrochromic devices. Commercial grade ITO thin films are usually deposited by sputtering. Solution-based coating methods, such as sol-gel however, can be simple and economic alternative method for obtaining oxide films and also ITO. In this thesis, &ldquo
ITO sols&rdquo
and &ldquo
ITO nanoparticle-incorporated hybrid ITO coating sols&rdquo
were prepared using indium chloride (InCl3

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3

Carter, Chet. "Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices." Diss., The University of Arizona, 2006. http://hdl.handle.net/10150/195405.

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This dissertation has focused on the study of the ITO/organic heterojunction and the chemistries therein, it proposes appropriate strategies that enhance the interfacial physical and electronic properties for charge injection with application to organic thin-layer devices. We focused on four major aspects of this work: i) To characterize the ITO surface and chemistries that may be pertinent to interaction with adjacent organic layers in a device configuration. This developed a working model of surface and provided a foundation for modification strategies. Characterization of the electronic properties of the surface indicate less than 5% of the geometrical surface is responsible for the bulk of current flow while the rest is electrically inactive. ii) To determine the extent to which these chemistries are variable and propose circumstances where compositional changes can occur. It is shown that the surface chemistry of ITO is heterogeneous and possible very dynamic with respect to the surrounding environment. iii) To propose a strategy for modification of the interface. Modification of ITO surfaces by small molecules containing carboxylic acid functionalities is investigated. Enhancements in the electron transfer rate coefficient were realized after modification of the ITO electrode. The enhancements are found to stem from a light etching mechanism. Additionally, an elecro-catalytic effect was observed with some of the modifiers. iv) Apply these modifications to organic light emitting diodes (OLEDs) and organic photovoltaic devices (OPVs). Enhancements seen in solution electrochemical experiments are indicative of the enhancements seen for solid state devices. Modifications resulted in substantially lower leakage currents (3 orders of magnitude in some cases) as well as nearly doubling the efficiency.An additional chapter describes the creation and characterization of electrochemically grown polymer nano-structures based on blazed angle diffraction gratings. The discussion details the micro-contact printing process and the electro-catalytic growth of the conductive polymers PANI and PEDOT to form diffraction grating structures in their own right. The resulting diffraction efficiency of these structures is shown to be sensitive to environmental conditions outlining possible uses as chemical sensors. This is demonstrated by utilizing these structures as working pH and potentiometric sensors based on the changing diffraction efficiency.

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Samadi, Khoshkhoo Mahdi [Verfasser], and Marcus [Akademischer Betreuer] Scheele. "Tin-doped Indium Oxide (ITO) Nanocrystal Superlattices (Surface Chemistry, Charge Transport, and Sensing Applications) / Mahdi Samadi Khoshkhoo ; Betreuer: Marcus Scheele." Tübingen : Universitätsbibliothek Tübingen, 2018. http://d-nb.info/1198973072/34.

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5

Salehi, Alireza. "Radiation and thermal treatment of indium tin oxide (ITO) films and rectifying contacts." Thesis, Cardiff University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388426.

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6

Reed, Amber Nicole. "Characterization of Inert Gas RF Plasma-Treated Indium Tin Oxide Thin Films Deposited Via Pulsed DC Magnetron Sputtering." Wright State University / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=wright1221763086.

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7

Saim, Hashim B. "A study of thick films of indium-tin-oxide (ITO) and the feasibility of using ITO for fabricating photovoltaic cells." Thesis, Loughborough University, 1985. https://dspace.lboro.ac.uk/2134/14150.

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Thin films of In203-Sn02 transparent semiconducting oxides (ITO) have been prepared by conventional thick-film method normally employed in microelectronics technology. When fired at approximately 650 C in a continuous air flow, a continuous thick-film of the semiconducting oxides (about 3000~ thick) is obtained. The sheet resistance of the as-deposited film is about 6kQ/sq. which can be reduced to about 300 Q/sq. upon heat o -3 treatment at 300 C in a vacuum of 10 -3 torr. A slight increase of the sheet resistance to about 1 kQ/sq. occurs on ageing at ambient atmospheres for a few days. It is thought that the origin of the conductivity in the as-deposited films is due to the presence of defects resulting from the non-stoichimetric composition of the material - i.e. oxygen vacancies. and/or intestitial tin ions. The remarkable increase in conductivity when the sample is heated in a vacuum is a result of an increase in the amount of native defects from shallow donor levels in the tin-oxide. At ambient atmosphere, the film loses tin due to gradual oxidation process which again leads to an increase in resistivity. The Hall effects measurements shows that changes due to annealing are caused primarily by change in mobility, and a slight change in carrier concentration. Vacuum annealing also eliminates the effects of annealing in air. This rules out any structural changes in the film due to annealing Nature of the annealing characteristics shows that the presence of oxygen is the cause of the changes in electrical properties. Structural studies show that the films are polycrystalline with crystal sizes of 100-200 R. There is no obvious change in crystal sizes due to 11 annealing process. Electron diffraction studies also show no obvious change due to the annealing process. This, together with the vacuum annealing and mobility studies might suggest that the conductivity in the films is due to non-stoichiometric effects. Auger electron spectroscopy (which allows accurate compositional analysis) and in-depth profiling of the elements in the film was carried out. The studies show that there is a slight increase in the In/O and Sn/O ratio for the annealed films compared to the as-deposited films. All the samples show light transmissivity in the visible region of the spectrum. The fundamental absorption edge appears near 3000R which corresponds to an optical band-gap of ~4.0eV. The fundamental optical absorption edge shifts slightly towards the lower wavelength for the more conductive samples. This shift is thought to be due to Burstein shift. There is no remarkable absorption observed up to about 2pm for the unfired and unannealed films. For the annealed films however, there is an increase in absorption as the wavelength increases, possibly due to free carrier absorption. Although these results do not indicate conductivity and mobility as high as that obtained by using thin-film techniques, a feasibility study has been undertaken to fabricate heterojunction solar cells (HJSC's) of ITO-SiO -Si (single crystals). x In this structure, the ITO thick film acts not only as a conducting surface layer that induces the SIS junction but also acts as an antireflection coating. The experimental results on the working cells have shown a V = 400 mV, and J = 0.5 mA/cm2 , cc Sc and efficiency of 2 ~ 0.2% under a total insulation of = 800 W/m. The dark and illuminated I-V characteristics have been compared with published SIS solar cell data and attempts have been made to explain the mechanism of the cells.

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8

Capozzi, Charles J. "Controlled self-assembly of ito nanoparticles into aggregate wire structures in pmma-ito nanocomposites." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28277.

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Thesis (M. S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Gerhardt, Rosario; Engineering: Dr. Arun M. Gokhale; Engineering: Dr. Preet Singh; Engineering: Dr. Mohan Srinivasarao; Engineering: Dr. Meisha Shofner.

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9

McQueen, Winckler Jane. "The influence of fabrication and radiation on the structure and performance of the indium tin oxide/ indium phosphide (ITO/InP) solar cell." Thesis, Open University, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316719.

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10

Boyea, John M. "Polystyrene composites filled with multi-wall carbon nanotubes and indium tin oxide nanopowders: properties, fabrication, characterization." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34813.

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This research was designed to fabricate and characterize novel polyhedral phase segregated microstructures of polystyrene (PS)-matrix composites filled with multi-walled carbon nanotubes (MWNT) and indium tin oxide (ITO) nanopowders. PS-composites were compression molded with MWNT and ITO separately first. The resulting composites were conducting, and remained optically transparent. Mixtures of MWNT and ITO were then used to form mixed ITO/MWNT PS-composites in order to optimize their transparency and conductivity. This was achieved by fabricating composites with varying concentrations of fillers. Impedance spectroscopy was used to characterize the electrical properties of the PS-composites. Optical properties were characterized by measuring the transmission of light through the PS-composite in the visible light spectrum using a spectrophotometer. The electrical properties and microstructural attributes of the fillers used were also characterized. The main objective of the project was to understand the relationships between the structural, electrical, and optical properties of the PS-composites. The resistivity of PS-composites filled with MWNT ranged from 105 to 1013 Ω cm for samples with 0.007 to 0.9 vol% MWNT. The resistivity of PS-composites filled with ITO ranged from 107 to 1013 Ω cm for PS-composites with 0.034 to 0.86 vol% ITO. PS/ITO composites had a percolation threshold of 0.15, 0.25, or 0.3 phr ITO, depending on the type of ITO used in the composite. The percolation threshold of PS/MWNT composites was found to be 0.01 phr MWNT. Mixed ITO/MWNT PS-composites were already percolated, the concentrations investigated in xv ii this study were already above the percolation threshold of these composites. A time dependence on impedance was found for PS-composites filled with MWNT. As time increases there is a decrease in impedance, and in some cases also a dependence on voltage. All PS-composites showed a dependence on the microstructure of the PS matrix and the filler material. The resistivity and percolation threshold were lower for PS/MWNT composites than PS/ITO composites due to the difference in filler size and aspect ratio, since MWNT have a smaller size. The orientation of PS grains with respect to neighboring grains was found to affect the resistivity of PS/MWNT. PS/MWNT composites with preferentially oriented PS grains were found to have a lower resistivity. Mixed ITO/MWNT PS-composites with the right filler concentrations were able to maintain transmission while decreasing resistivity. The fracture surface of fractured PS-composites prepared in this work indicated that there was bonding between adjacent PS-grains. From this work, it can be concluded that large grain hybrid ITO/MWNT PS-composites provide insight into the effect of combining nanometer sized filler materials together in a polymer matrix on the resultant structural, electrical, and optical properties of the composite. In the future, it is recommended that this study be used to aid research in flexible transparent conducting electrodes using a polymer matrix and hybrid/mixed nanometer sized conducting fillers.

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Books on the topic "Tin-doped indium oxide (ITO)"

1

Saim, H. B. A study of thick films of indium-tin-oxide (ITO) and the feasibility of using ITO for fabricating photovoltaic cells. 1985.

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2

Winckler, Jane McQueen. The Influence of fabrication and radiation on the structure and performance of the indium tin oxide/indium phosphide (ITO/InP) solar cell. 1992.

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3

Hultaker, Annette. Transparent Conductive Tin Doped Indium Oxide: Characterization of Thin Films Made by Sputter Deposition With Silver Additive & by Spin Coating from Nanoparticle ... the Faculty of Science & Technology, 37). Uppsala Universitet, 2002.

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Book chapters on the topic "Tin-doped indium oxide (ITO)"

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Lövenich, Wilfried, and Andreas Elschner. "ITO Replacements: Polymers Indium Tin Oxide (ITO)." In Handbook of Visual Display Technology, 1257–69. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_56.

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2

Lippens, Paul, and Uwe Muehlfeld. "Indium Tin Oxide (ITO): Sputter Deposition Processes." In Handbook of Visual Display Technology, 1–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-35947-7_54-2.

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Lippens, Paul, and Uwe Muehlfeld. "Indium Tin Oxide (ITO): Sputter Deposition Processes." In Handbook of Visual Display Technology, 779–94. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-540-79567-4_54.

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Lippens, Paul, and Uwe Muehlfeld. "Indium Tin Oxide (ITO): Sputter Deposition Processes." In Handbook of Visual Display Technology, 1215–34. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_54.

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Aniley, Almaw Ayele, S. K. Naveen Kumar, and A. Akshaya Kumar. "Indium Doped Tin Oxide (ITO) Nanopowder-Based Electric Heater Fabrication and Characterization." In Nanostructured Smart Materials, 253–63. First edition.: Apple Academic Press, 2021. http://dx.doi.org/10.1201/9781003130468-17.

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Nomura, K., J. Sakuma, T. Ooki, and M. Takeda. "Mössbauer study on indium tin oxides (ITO) doped with Fe." In ICAME 2007, 531–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78697-9_70.

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7

Hippler, R., H. Steffen, M. Quaas, T. Röwf, T. M. Tun, and H. Wulff. "Plasma-Assisted Deposition and Crystal Growth of Thin Indium-Tin-Oxide (ITO) Films." In Advances in Solid State Physics 44, 299–312. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-39970-4_23.

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Park, Joon Hong, Sang Chul Lee, Jin Ho Lee, and Pung Keun Song. "Characteristics of ITO Films Deposited by DC Magnetron Sputtering Using Various Sintered Indium-Tin-Oxide Targets." In Ceramic Transactions Series, 419–26. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144145.ch64.

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Park, Joon Hong, Sang Chul Lee, Gun Hwan Lee, and Pung Keun Song. "Study on Indium Tin Oxide Films Deposited Using Different Conductive ITO Targets by DC Magnetron Sputtering." In Materials Science Forum, 833–36. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-431-6.833.

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Han, Hyun-Woong, Young Hoon Yun, and Sung Churl Choi. "Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process." In Functionally Graded Materials VIII, 325–30. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-970-9.325.

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Conference papers on the topic "Tin-doped indium oxide (ITO)"

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Psuja, P., and W. Strek. "Preparation of europium doped tin oxide, indium oxide, and ITO nanocomposites." In NanoScience + Engineering, edited by Zeno Gaburro and Stefano Cabrini. SPIE, 2007. http://dx.doi.org/10.1117/12.735722.

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Lee, Byung-Kee, Yong-Ha Song, and Jun-Bo Yoon. "Indium Tin Oxide (ITO) Transparent MEMS Switches." In 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2009. http://dx.doi.org/10.1109/memsys.2009.4805340.

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3

Matsuo, Jiro. "O[sub 2] cluster ion assisted deposition for tin doped indium oxide (ITO) films." In The CAARI 2000: Sixteenth international conference on the application of accelerators in research and industry. AIP, 2001. http://dx.doi.org/10.1063/1.1395472.

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4

Gurev, Harold S., and Kim J. Bicking. "Indium tin oxide (ITO) coating of curved polymer substrates." In SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, edited by James D. Rancourt. SPIE, 1994. http://dx.doi.org/10.1117/12.185796.

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5

Tsai, Hong-Yin, Hsiharng Yang, Chengtang Pan, and Min-Chieh Chou. "Laser patterning indium tin oxide (ITO) coated on PET substrate." In International Symposium on Microelectronics and Assembly, edited by Kevin H. Chau, M. Parameswaran, and Francis E. Tay. SPIE, 2000. http://dx.doi.org/10.1117/12.404897.

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6

Mishra, Satyendra K., Samta Rani, and Banshi D. Gupta. "Fiber optic hydrogen gas sensor utilizing surface plasmon resonance of nickel oxide doped indium-tin oxide (ITO) thin films." In JSAP-OSA Joint Symposia. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/jsap.2013.18p_d4_8.

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Manik, Prashanth Paramahans, Ravi Kesh Mishra, Udayan Ganguly, and Saurabh Lodha. "Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872325.

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Yanagida, T., G. Meng, K. Nagashima, M. Kanai, and T. Kawai. "Impact of Preferential Indium Nucleation on Electrical Conductivity of Indium-Tin-Oxide (ITO) Single Crystalline Nanowires." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.c-2-5.

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9

Bo, Gu. "Laser processing of indium tin oxide (ITO) films in manufacturing flat panel displays." In ICALEO® ‘95: Proceedings of the Laser Materials Processing Conference. Laser Institute of America, 1995. http://dx.doi.org/10.2351/1.5058934.

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10

Wang, Yudong, Martina Abb, Nikitas Papasimakis, C. H. de Groot, and Otto L. Muskens. "Surface-Enhanced Infrared Spectroscopy using ultra-compact indium tin oxide (ITO) sensor arrays." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sm3e.7.

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Reports on the topic "Tin-doped indium oxide (ITO)"

1

Arnett, Clint, and Justin Lange. Method for localizing and differentiating bacteria within biofilms grown on indium tin oxide : spatial distribution of exoelectrogenic bacteria within intact ITO biofilms via FISH. Construction Engineering Research Laboratory (U.S.), December 2017. http://dx.doi.org/10.21079/11681/25701.

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