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Journal articles on the topic 'Tin-doped indium oxide (ITO)'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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1

Prajuabwan, Pakorn, Sunit Rojanasuwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "Exciton Dissociation at Indium Tin Oxide/Indium Doped Zinc Phthalocyanine Interface." Applied Mechanics and Materials 313-314 (March 2013): 140–47. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.140.

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A new intercalation of Indium and zinc phthalocyanine(ZnPc) thin film is developed by using thermal co-evaporation technique. The exciton dissociation at the interface of Indium Tin Oxide(ITO) electrode and Indium doped ZnPc upon laser irradiation is observed through the transient photovoltage measurement technique in comparison with the interfacial exciton dissociation occurred at ITO/pristine ZnPc interface. The occurring transient photovoltage spike is regarded as the effect of exciton dissociation at ITO/In-doped ZnPc interface and depends on the amount of free carrier separation by built-in field or charge carrier concentration according to doping ratio. The experiments demonstrate the existence of exciton dissociation at ITO/In-doped ZnPc interface, the direction of charges transfer is that holes are injected to ITO, whereas electrons are left in bulk film. A thin insulating layer of 6 nm thick lithium fluoride(LiF) is inserted between ITO and In-doped ZnPc to prevent the exciton dissociation at ITO/In-doped ZnPc interface and insist on the phenomenon of interfacial exciton dissociation. Further photoelectron spectroscopy experiments prove that In-doped ZnPc is hole transport material.

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2

Hongsakul, Thunchanok, Supan Yodyingyong, Tshering Nidup, and Darapond Triampo. "Effect of Crystallinity on Near Infrared Reflectance of Indium TiN Oxide Nanorice-Particles." Key Engineering Materials 824 (October 2019): 168–75. http://dx.doi.org/10.4028/www.scientific.net/kem.824.168.

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Tin-doped indium oxide or indium tin oxide (ITO) has many promising uses in applications, such as, transparent conductive oxides, flat panel displays, and energy-saving windows. In this work, nanorice particles of tin-doped indium oxide (ITO) were obtained by a simple sol-gel method. Indium salts and stannous fluoride precursors were mixed ultrasonically in an aqueous medium. The crystallinity and chemical bonds were studied by X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FTIR). FTIR spectra before calcination showed the characteristic bonds of In–OH and Sn–OH at 1160 cm-1 and 1380 cm-1, respectively. After calcination at 400°C for 2 h, these characteristic bonds disappeared, confirming the formation of crystalline oxide. Moreover, scanning electron micrographs revealed well-defined structure, called nanorice, emerging from controlled crystal growth at 85°C for 90 min. The particle size of ITO was approximately 500 nm in length and diameter of 150 nm. The effect of crystallinity was studied by UV absorbance and NIR reflectance. These demonstrated promising results for use as energy-saving windows.

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3

Min, Kyungchan, Kyoung Soon Choi, Wook Jin Jeon, Dong Kyu Lee, Sein Oh, Jouhahn Lee, Jae-Young Choi, and Hak Ki Yu. "Hierarchical Ag nanostructures on Sn-doped indium oxide nano-branches: super-hydrophobic surface for surface-enhanced Raman scattering." RSC Advances 8, no. 23 (2018): 12927–32. http://dx.doi.org/10.1039/c8ra01510d.

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4

Quoc, Khuong Anh Nguyen, Hau Thi Hien Vo, Tuan Phan Dinh, Long Giang Bach, and Van Thi Thanh Ho. "Synthesis and Characterization of Advanced Nanomaterials: Tin-Doped Indium Oxide (ITO) and Platinium Deposited on Tin-Doped Indium Oxide (Pt/ITO)." Journal of Nanoscience and Nanotechnology 18, no. 10 (October 1, 2018): 7246–50. http://dx.doi.org/10.1166/jnn.2018.15722.

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5

Wen, Shijie, G. Campet, and J. Portier. "Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide." Active and Passive Electronic Components 14, no. 4 (1992): 191–98. http://dx.doi.org/10.1155/1992/56168.

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The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessary to achieve high electronic mobility in ITO (Indium Tin Oxide).

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6

Li, Luping, Shikai Chen, Jung Kim, Cheng Xu, Yang Zhao, and Kirk J. Ziegler. "Controlled synthesis of tin-doped indium oxide (ITO) nanowires." Journal of Crystal Growth 413 (March 2015): 31–36. http://dx.doi.org/10.1016/j.jcrysgro.2014.12.003.

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7

Guizzardi, Michele, Silvio Bonfadini, Liliana Moscardi, Ilka Kriegel, Francesco Scotognella, and Luigino Criante. "Large scale indium tin oxide (ITO) one dimensional gratings for ultrafast signal modulation in the visible spectral region." Physical Chemistry Chemical Physics 22, no. 13 (2020): 6881–87. http://dx.doi.org/10.1039/c9cp06839b.

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8

Zhang, Xiaojia, Xingqiang Liu, Yupeng Zhang, Rongrong Bao, Dengfeng Peng, Tianfeng Li, Guoyun Gao, Wenxi Guo, and Caofeng Pan. "Rational design of an ITO/CuS nanosheet network composite film as a counter electrode for flexible dye sensitized solar cells." Journal of Materials Chemistry C 4, no. 34 (2016): 8130–34. http://dx.doi.org/10.1039/c6tc02610a.

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9

Sohn, Hong Yong, and Arun Murali. "Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films." Molecules 26, no. 5 (March 7, 2021): 1456. http://dx.doi.org/10.3390/molecules26051456.

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This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

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10

Heo, Jin Hyuck, Hye Ji Han, Minho Lee, Myungkwan Song, Dong Ho Kim, and Sang Hyuk Im. "Stable semi-transparent CH3NH3PbI3planar sandwich solar cells." Energy & Environmental Science 8, no. 10 (2015): 2922–27. http://dx.doi.org/10.1039/c5ee01050k.

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Semi-transparent MAPbI₃planar sandwich solar cells were fabricated by simply laminating an F doped tin oxide/TiO₂/MAPbI₃/wet hole transporting material with additives and PEDOT:PSS/indium tin oxide (ITO).

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11

Park, Ji Young, and Hee Jung Park. "Optoelectric Property and Flexibility of Tin-Doped Indium Oxide (ITO) Thin Film." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3542–46. http://dx.doi.org/10.1166/jnn.2020.17489.

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Transparent conducting electrodes (TCEs) are key materials for electronic devices such as flat panel displays (e.g., a liquid crystal display and a light emitting diode display), photovoltaic cells, and transparent transistors. Tin-doped indium oxide (ITO) is known to be highly conductive/transparent, but rigid. In this study, very thin (<35 nm) ITO films with amorphous phases were prepared on flexible substrates and their optoelectric properties investigated. A 10 nm-thick ITO film was also fabricated. Because of their low thickness, their transmittances were above 80% at ˜550 nm wavelength. Their sheet resistances were below 0.7 kΩ/sq and decreased with increasing film thickness. An interesting observation was that their sheet resistances were nearly unchanged even at a bending radius of ˜2 mm. These optoelectric properties and flexibility demonstrate that the ITO films fabricated in this study are suitable transparent conducting oxides for the electrodes of flexible optoelectric devices.

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12

Nadaud, N., N. Lequeux, M. Nanot, J. Jové, and T. Roisnel. "Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12." Journal of Solid State Chemistry 135, no. 1 (January 1998): 140–48. http://dx.doi.org/10.1006/jssc.1997.7613.

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13

HUANG, J. Y., G. H. FAN, T. MEI, S. W. ZHENG, Q. L. NIU, S. T. LI, and Y. ZHANG. "PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION." Modern Physics Letters B 24, no. 32 (December 30, 2010): 3089–95. http://dx.doi.org/10.1142/s0217984910025371.

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Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

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14

Chihi, Adel, and Brahim Bessais. "Characterization and photoelectrochemical properties of CICS thin films grown via an electrodeposition route." RSC Advances 7, no. 47 (2017): 29469–80. http://dx.doi.org/10.1039/c7ra04330a.

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In this work, cerium doped CuInS₂ (CIS) polycrystalline thin films with different Ce content are firstly synthesized on indium doped tin oxide (ITO) glass via a low-cost electrochemical technique.

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15

Yanagida, Masatoshi, Yasuhiro Shirai, Dhruba B. Khadka, and Kenjiro Miyano. "Photoinduced ion-redistribution in CH3NH3PbI3 perovskite solar cells." Physical Chemistry Chemical Physics 22, no. 43 (2020): 25118–25. http://dx.doi.org/10.1039/d0cp04350h.

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We use photoinduced absorption spectroscopy (PAS) to study the ionic motion in CH₃NH₃PbI₃ perovskite solar cells, consisting of indium tin oxide (ITO)/NiOx/perovskite/phenyl-C₆₁-butyric-acid–methyl ester (PCBM)/aluminum-doped zinc oxide (AZO)/ITO.

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16

Pohl, Annika, and Bruce Dunn. "Mesoporous indium tin oxide (ITO) films." Thin Solid Films 515, no. 2 (October 2006): 790–92. http://dx.doi.org/10.1016/j.tsf.2005.12.195.

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17

Han, Younggun, Donghwan Kim, Jun-Sik Cho, Seok-Keun Koh, and Yo Seung Song. "Tin-doped indium oxide (ITO) film deposition by ion beam sputtering." Solar Energy Materials and Solar Cells 65, no. 1-4 (January 2001): 211–18. http://dx.doi.org/10.1016/s0927-0248(00)00097-0.

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18

Gao, J., R. Chen, D. H. Li, L. Jiang, J. C. Ye, X. C. Ma, X. D. Chen, Q. H. Xiong, H. D. Sun, and T. Wu. "UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires." Nanotechnology 22, no. 19 (March 23, 2011): 195706. http://dx.doi.org/10.1088/0957-4484/22/19/195706.

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19

Yong, T. K., T. Y. Tou, and B. S. Teo. "Pulsed laser deposition of tin-doped indium oxide (ITO) on polycarbonate." Applied Surface Science 248, no. 1-4 (July 2005): 388–91. http://dx.doi.org/10.1016/j.apsusc.2005.03.093.

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20

Malik, Oleksandr, and F. J. de la Hidalga-W. "Spray Deposited Thin Films of Tin-Doped Indium Oxide for Optoelectronic Applications." Advanced Materials Research 677 (March 2013): 173–78. http://dx.doi.org/10.4028/www.scientific.net/amr.677.173.

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The structural, electrical, and optical properties of spray deposited tin-doped indium oxide (ITO) films are reported in this work. The films have excellent properties, as a transparent and conducting electrode, for applications in a wide range of areas of optoelectronics such as photodetection and photovoltaic. One example of the ITO thin films application in semiconductor-insulating-semiconductor (SIS) efficient solar cells and modules is shown.

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21

Ozcariz, Aritz. "Development of Copper Oxide Thin Film for Lossy Mode Resonance-Based Optical Fiber Sensor." Proceedings 2, no. 13 (November 28, 2018): 893. http://dx.doi.org/10.3390/proceedings2130893.

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In this work we present the study of copper(II) oxide thin films for the fabrication of lossy mode resonance-based (LMR) optical fiber sensors. This material has proven to be capable of generating such resonances with a promising result. Their optimal optical properties have allowed the achievement of a sensitivity of 7234 nm/RIU, higher than that obtained with other metal oxides such a SnO2, indium tin oxide (ITO), aluminum doped zinc oxide (AZO) or indium-gallium-zinc oxide (IGZO). The use of this new film may facilitate the use of LMR based sensors for applications that require maximum sensitivity and stability.

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22

Biswas, Prasanta Kumar. "Absorption and Fluorescence Properties of Sol-Gel Based Nanostructured Transparent Conducting Oxide Films on Silica Glass." Advanced Materials Research 11-12 (February 2006): 183–88. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.183.

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Nanostructured transparent conducting oxide (TCO) films such as tin doped indium oxide (ITO), antimony doped tin oxide (ATO), tin doped cadmium oxide (CTO) were deposited on suprasil grade pure silica glass from their respective precursors with wide variation of dopant concentration, 10, 30, 50, 70 at. % and their optical properties have been studied. The films were obtained by thermal curing (350 - 500°C) in air. If the cluster size be decreased to nanoscale then blue shift of bulk band gap occurs due to the quantum confinement effect of the semiconducting TCO materials. Free carrier concentration of ITO and ATO films were in the order of 1019 cc-1. The Moss-Burstein shift occurred in each case. The photoluminescence (PL) behaviour of the nanostructured materials revealed emissions for the HOMO-LUMO excitonic transitions. This was identified by selecting the excitation energy according to the photoluminescence excitonic transitions (PLE).

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23

Ohtsuka, M., R. Sergiienko, S. Petrovska, B. Ilkiv, and T. Nakamura. "Iron-doped indium saving indium-tin oxide (ITO) thin films sputtered on preheated substrates." Optik 179 (February 2019): 19–28. http://dx.doi.org/10.1016/j.ijleo.2018.10.130.

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24

Lopez, Michael J., Matthew V. Sheridan, Jeffrey R. McLachlan, Travis S. Grimes, and Christopher J. Dares. "Electrochemical oxidation of trivalent americium using a dipyrazinylpyridine modified ITO electrode." Chemical Communications 55, no. 28 (2019): 4035–38. http://dx.doi.org/10.1039/c9cc00837c.

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We present here the electrochemical oxidation of Am(iii) to Am^VO₂⁺ and Am^VIO₂²⁺ in pH 1 nitric acid using a mesoporous tin-doped indium oxide electrode modified with a covalently attached dipyrazinylpyridine ligand.

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25

Muramatsu, Atsushi, Takafumi Sasaki, Yosuke Endo, Yuka Doi, and Kiyoshi Kanie. "Solvothermal Synthesis of ITO Nanoparticles Precisely Controlled in Size and Shape." Advances in Science and Technology 62 (October 2010): 50–55. http://dx.doi.org/10.4028/www.scientific.net/ast.62.50.

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Highly crystalline cubic indium tin oxide (ITO) nanoparticles with narrow size distribution were successfully prepared directly in one step from the mixed solution of indium and tin salts by the solvothermal method with lean ethylene glycol as a solvent. The addition of water must inhibit the formation of ITO crystals, but can strongly promote the formation of In(OH)3 and InOOH, including tin hydroxide. Since In(OH)3 and InOOH was not found in water-free EG system, the transformation of In(OH)3 and InOOH into In2O3 phase must be remarkably slow so that once formed indium hydroxides become final product in water-containing system. The as-prepared particles in BuOH as a solvent consist of irregular shaped nanoparticles of ITO and InOOH. In the solvothermal system with glycol as solvents, direct formation of ITO solid particles was observed starting from amorphous indium hydroxides, In(OH)3 and InOOH phases are not detected as intermediates. In addition, their size with the range from 15 to 40 nm was easily operated with changing conditions, such as aging period and sodium hydroxide concentration. X-ray diffraction measurement and high resolution transmission electron microscopic observation revealed that basically single-crystalline ITO nanoparticles were successfully obtained, and doped tin atoms were uniformly distributed in the nanoparticles.

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26

Wu, Chia-Ching. "Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures." RSC Advances 8, no. 22 (2018): 11862–70. http://dx.doi.org/10.1039/c7ra13550e.

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A flexible and transparent amorphous-indium tin oxide/silver/crystalline-indium tin oxide (a-ITO/Ag/c-ITO) triple-layer structure was prepared as an electrode for capacitive-type touch screen panels (TSPs).

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27

Meza, Daniel, Alexandros Cruz, Anna Morales-Vilches, Lars Korte, and Bernd Stannowski. "Aluminum-Doped Zinc Oxide as Front Electrode for Rear Emitter Silicon Heterojunction Solar Cells with High Efficiency." Applied Sciences 9, no. 5 (February 28, 2019): 862. http://dx.doi.org/10.3390/app9050862.

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Transparent conductive oxide (TCO) layers of aluminum-doped zinc oxide (ZnO:Al) were investigated as a potential replacement of indium tin oxide (ITO) for the front contact in silicon heterojunction (SHJ) solar cells in the rear emitter configuration. It was found that ZnO:Al can be tuned to yield cell performance almost at the same level as ITO with a power conversion efficiency of 22.6% and 22.8%, respectively. The main reason for the slight underperformance of ZnO:Al compared to ITO was found to be a higher contact resistivity between this material and the silver grid on the front side. An entirely indium-free SHJ solar cell, replacing the ITO on the rear side by ZnO:Al as well, reached a power conversion efficiency of 22.5%.

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28

ALTECOR, ALEKSEY, YUANBING MAO, and KAREN LOZANO. "LARGE-SCALE SYNTHESIS OF TIN-DOPED INDIUM OXIDE NANOFIBERS USING WATER AS SOLVENT." Functional Materials Letters 05, no. 03 (September 2012): 1250020. http://dx.doi.org/10.1142/s1793604712500208.

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Here we report the successful fabrication of tin-doped indium oxide (ITO) nanofibers using a scalable Forcespinning™ method. In this environmentally-friendly process, water was used as the only solvent for both Polyvinylpyrrolidone (PVP, the sacrificial polymer) and the metal chloride precursor salts. The obtained precursor nanofiber mats were calcinated at temperatures ranging from 500–800°C to produce ITO nanofibers with diameters as small as 400 nm. The developed ITO nanofibers were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction analysis.

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29

Mbarek, Hédia, Moncef Saadoun, and Brahim Bessaïs. "Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing." Materials Science and Engineering: C 26, no. 2-3 (March 2006): 500–504. http://dx.doi.org/10.1016/j.msec.2005.10.037.

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30

Sheridan, Matthew V., Jeffrey R. McLachlan, Johan R. González-Moya, Nicole D. Cortés-Medina, and Christopher J. Dares. "Indium Tin-Doped Oxide (ITO) as a High Activity Water Oxidation Photoanode." ACS Applied Materials & Interfaces 13, no. 33 (August 12, 2021): 40127–33. http://dx.doi.org/10.1021/acsami.1c11298.

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31

Kashyout, Abd El-Hady B., Marwa Fathy, and Moataz B. Soliman. "Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide." International Journal of Photoenergy 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/139374.

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The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222) and (400) of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about1.62×10−4 Ω⋅cm.

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32

Shrestha, S., C. M. Y. Yeung, F. Marken, C. E. Mills, and S. C. Tsang. "Layer-by-layer deposition of praseodymium oxide on tin-doped indium oxide (ITO) surface." Sensors and Actuators B: Chemical 123, no. 1 (April 10, 2007): 400–406. http://dx.doi.org/10.1016/j.snb.2006.09.008.

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33

Minami, Tadatsugu. "New n-Type Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (August 2000): 38–44. http://dx.doi.org/10.1557/mrs2000.149.

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Most research to develop highly transparent and conductive thin films has focused on n-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2 and In2O3 were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2 (Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4 were developed prior to 1980, but their TCO films have not yet been used widely.

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34

Jyoti, Divya, and Devendra Mohan. "Canvas of Optics behind Nanocrystalline TiO₂ Film Engaged in Dye-Sensitized Solar Cells." Materials Science Forum 832 (November 2015): 54–60. http://dx.doi.org/10.4028/www.scientific.net/msf.832.54.

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A theoretical explanation of optics behind TiO2has been presented with the help of a four phase model air/glass/ indium doped tin oxide/TiO2designed by modifying Rouard’s model to calculate the final transmittance in to TiO2layer. An optical simulation for the reflectance and transmittance has been executed for the synthesized nanocrystalline TiO2films. To validate the theoretical results TiO2film has been deposited onto indium doped tin oxide (ITO) layer by sol-gel dip coating technique. The novelty of the task lies behind the fact that transmittance helps to calculate the light harvesting efficiency of the Dye-Sensitized solar cells which is the ratio of light actually harvested to the light actually reached to TiO2layer, and that can be done only if one knows transmittance.

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35

Hong, Sung-Jei, and Jeong-In Han. "Indium tin oxide (ITO) thin film fabricated by indium–tin–organic sol including ITO nanoparticle." Current Applied Physics 6 (August 2006): e206-e210. http://dx.doi.org/10.1016/j.cap.2006.01.041.

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36

Chakraborty, Mohua, Dhrubojyoti Roy, Amrita Biswas, R. Thangavel, and G. Udayabhanu. "Structural, optical and photo-electrochemical properties of hydrothermally grown ZnO nanorods arrays covered with α-Fe2O3 nanoparticles." RSC Advances 6, no. 79 (2016): 75063–72. http://dx.doi.org/10.1039/c6ra15752a.

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A low cost hydrothermal method and subsequent wet-chemical process has been used for the preparation of a ZnO nanorod (NR) array film grown on tin doped indium oxide (ITO) coated glass substrates, post decorated by α-Fe₂O₃ nanoparticles (NPs).

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37

Li, Luping, Cheng Xu, Yang Zhao, and Kirk J. Ziegler. "Tin-Doped Indium Oxide-Titania Core-Shell Nanostructures for Dye-Sensitized Solar Cells." Advances in Condensed Matter Physics 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/903294.

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Dye-sensitized solar cells (DSSCs) hold great promise in the pursuit of reliable and cheap renewable energy. In this work, tin-doped indium oxide (ITO)-TiO2core-shell nanostructures are used as the photoanode for DSSCs. High-density, vertically aligned ITO nanowires are grown via a thermal evaporation method and TiO2is coated on nanowire surfaces via TiCl4treatment. It is found that high TiO2annealing temperatures increase the crystallinity of TiO2shell and suppress electron recombination in the core-shell nanostructures. High annealing temperatures also decrease dye loading. The highest efficiency of 3.39% is achieved at a TiO2annealing temperature of 500°C. When HfO2blocking layers are inserted between the core and shell of the nanowire, device efficiency is further increased to 5.83%, which is attributed to further suppression of electron recombination from ITO to the electrolyte. Open-circuit voltage decay (OCVD) measurements show that the electron lifetime increases by more than an order of magnitude upon HfO2insertion. ITO-TiO2core-shell nanostructures with HfO2blocking layers are promising photoanodes for DSSCs.

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38

Zhang, Bo. "Properties of Annealed Indium Tin Tantalum Oxide Films Prepared by Reactive Magnetron Sputtering." Applied Mechanics and Materials 422 (September 2013): 70–74. http://dx.doi.org/10.4028/www.scientific.net/amm.422.70.

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ndium tin oxide (ITO) and indium tin tantalum oxide (ITTO) films were deposited on glass substrates at room temperature by magnetron sputtering. Properties of the ITO and ITTO films showed a dependence on annealing treatment. ITTO film deposited at room temperature showed the enhancement in (400) orientation and the increasing in grain size. With an increase in annealing temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The reflection edge in near-IR range and the absorption edge in near-UV range shifted due to the variation in carrier concentration. Ta-doping improved the carrier concentration of the films and widened the corresponding optical band gap. The variations in optical band gap were due to Burstein-Moss effect. The higher value of figure of merit of ITTO films was observed. The tantalum-doped ITO films could find extensive application in some devices.

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Nomura, K., J. Sakuma, T. Ooki, and M. Takeda. "Mössbauer study on indium tin oxides (ITO) doped with Fe." Hyperfine Interactions 184, no. 1-3 (June 2008): 117–21. http://dx.doi.org/10.1007/s10751-008-9775-9.

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Zhang, Ming Guo, and Nan Hai Sun. "Ag Doped Zinc Tin Oxide as Cathode for Organic Photovoltaic Cells." Applied Mechanics and Materials 209-211 (October 2012): 1719–22. http://dx.doi.org/10.4028/www.scientific.net/amm.209-211.1719.

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A thin Ag layer embedded between layers of zinc tin oxide (ZTO) are compared to cells using an indium tin oxide electrode was investigated for inverted organic bulk heterojunction solar cells employing a multilayer electrode. ZTO/Ag/ ZTO (ZAZ) electrode is the preparation at room temperature, a high transparency in the visible part of the spectrum, and a very low sheet resistance comparable to treated ITO without the need for any thermal post deposition treatment as it is necessary for ITO. The In-free ZAZ electrodes exhibit a favorable work function of 4.3 eV and are shown to allow for excellent electron extraction even without a further interlayer. This renders ZAZ a perfectly suited bottom electrode for inverted organic solar cells with simplified cell architecture.

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Nakazawa, Hikaru, Mitsuo Umetsu, Tatsuya Hirose, Takamitsu Hattori, and Izumi Kumagai. "Identification of Indium Tin Oxide Nanoparticle-Binding Peptides via Phage Display and Biopanning Under Various Buffer Conditions." Protein & Peptide Letters 27, no. 6 (June 9, 2020): 557–66. http://dx.doi.org/10.2174/0929866526666191113151934.

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Background: By recent advances in phage-display approaches, many oligopeptides exhibiting binding affinities for metal oxides have been identified. Indium tin oxide is one of the most widely used conductive oxides, because it has a large band gap of 3.7–4.0 eV. In recent years, there have been reports about several ITO-based biosensors. Development of an ITO binding interface for the clustering of sensor proteins without complex bioconjugates is required. Objective: In this article, we aimed to identify peptides that bind to indium tin oxide nanoparticles via different binding mechanisms. Methods: Indium tin oxide nanoparticles binding peptide ware selected using phage display and biopanning against indium tin oxide, under five different buffer conditions and these peptides characterized about binding affinity and specificity. Results: Three types of indium tin oxide nanoparticles-binding peptides were selected from 10 types of peptide candidates identified in phage display and biopanning. These included ITOBP8, which had an acidic isoelectric point, and was identified when a buffer containing guanidine was used, and ITOBP6 and ITOBP7, which contained a His-His-Lys sequence at their N-termini, and were identified when a highly concentrated phosphate elution buffer with a low ionic strength was used. Among these peptides, ITOBP6 exhibited the strongest indium tin oxide nanoparticlesbinding affinity (dissociation constant, 585 nmol/L; amount of protein bound at saturation, 17.5 nmol/m 2 - particles). Conclusion: These results indicate that peptides with specific binding properties can be obtained through careful selection of the buffer conditions in which the biopanning procedure is performed.

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Antonov, V. N., L. V. Bekenov, L. P. Germash, and N. A. Plotnikov. "X-Ray Magnetic Dichroism in the Cobalt-Doped Indium Tin Oxide from First Principle Calculations." Journal of Solid State Physics 2013 (November 26, 2013): 1–10. http://dx.doi.org/10.1155/2013/213594.

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The electronic structure of the Co-doped indium tin oxide (ITO) diluted magnetic semiconductors (DMSs) were investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band structure method. The X-ray absorption spectra (XAS) and X-ray magnetic circular dichroism (XMCD) spectra at the Co L3, In M2, Sn M2, and O K edges were investigated theoretically from first principles. The origin of the XMCD spectra in these compounds was examined. The calculated results are compared with available experimental data.

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Cheong, Deock-Soo, Dong-Hun Yun, Sang-Hwan Park, and Chang-Sam Kim. "Indium Tin Oxide (ITO) Coatings Fabricated Using Mixed ITO Sols." Journal of the Korean Ceramic Society 46, no. 6 (November 30, 2009): 708–12. http://dx.doi.org/10.4191/kcers.2009.46.6.708.

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Li, Yuhu, Zhihong Liu, Qihou Li, Zhiyong Liu, and Li Zeng. "Recovery of indium from used indium–tin oxide (ITO) targets." Hydrometallurgy 105, no. 3-4 (January 2011): 207–12. http://dx.doi.org/10.1016/j.hydromet.2010.09.006.

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Popović, Jasminka, Biserka Gržeta, Emilija Tkalčec, Anđelka Tonejc, Mirjana Bijelić, and Christian Goebbert. "Effect of tin level on particle size and strain in nanocrystalline tin-doped indium oxide (ITO)." Materials Science and Engineering: B 176, no. 2 (February 2011): 93–98. http://dx.doi.org/10.1016/j.mseb.2010.09.008.

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Lewis, Brian G., and David C. Paine. "Applications and Processing of Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (August 2000): 22–27. http://dx.doi.org/10.1557/mrs2000.147.

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The first report of a transparent conducting oxide (TCO) was published in 1907, when Badeker reported that thin films of Cd metal deposited in a glow discharge chamber could be oxidized to become transparent while remaining electrically conducting. Since then, the commercial value of these thin films has been recognized, and the list of potential TCO materials has expanded to include, for example, Al-doped ZnO, GdInOx, SnO2, F-doped In2O3, and many others. Since the 1960s, the most widely used TCO for optoelectronic device applications has been tin-doped indium oxide (ITO). At present, and likely well into the future, this material offers the best available performance in terms of conductivity and transmissivity, combined with excellent environmental stability, reproducibility, and good surface morphology. The use of other TCOs in large quantities is application-specific. For example, tin oxide is now widely used in architectural glass applications.

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Rozniecka, Ewa, Martin Jonsson-Niedziolka, Janusz W. Sobczak, and Marcin Opallo. "Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes." Electrochimica Acta 56, no. 24 (October 2011): 8739–45. http://dx.doi.org/10.1016/j.electacta.2011.07.095.

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Chen, Si Feng, Yong Deng, Heng Xiong, and Hao Cheng Lei. "Research Status of Recovery of Indium from Indium-Tin Oxide (ITO) Targets." Materials Science Forum 944 (January 2019): 1259–64. http://dx.doi.org/10.4028/www.scientific.net/msf.944.1259.

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Indium is widely used in some important fields due to its semiconductor and optoelectronic performance. While the reduction of indium minerals, as one of secondary resources, the amount of indium–tin oxide (ITO) waste target has been accumulated considerably. ITO film is the main functional fraction of LCD has consumed more than 60% of the indium production worldwide. Therefore, it is necessary to recycle indium from ITO waste. Some researchers have been done for proper treatment to recycle indium from ITO waste. In this paper, the extraction methods of indium from ITO waste target are introduced, and the advantages and disadvantages of each method are compared.

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Pruna, R., F. Palacio, M. Martínez, O. Blázquez, S. Hernández, B. Garrido, and M. López. "Organosilane-functionalization of nanostructured indium tin oxide films." Interface Focus 6, no. 6 (December 6, 2016): 20160056. http://dx.doi.org/10.1098/rsfs.2016.0056.

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Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic force microscopy, implying higher electroactive surface area for nanostructured ITO electrodes and thus higher detection levels. To investigate the increase in detectability, chemical organosilane-functionalization of nanostructured ITO electrodes was performed. The formation of 3-glycidoxypropyltrimethoxysilane (GOPTS) layers was detected by X-ray photoelectron spectroscopy. As an indirect method to confirm the presence of organosilane molecules on the ITO substrates, cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were also carried out. Cyclic voltammograms of functionalized ITO electrodes presented lower reduction-oxidation peak currents compared with non-functionalized ITO electrodes. These results demonstrate the presence of the epoxysilane coating on the ITO surface. EIS showed that organosilane-functionalized electrodes present higher polarization resistance, acting as an electronic barrier for the electron transfer between the conductive solution and the ITO electrode. The results of these electrochemical measurements, together with the significant difference in the X-ray spectra between bare ITO and organosilane-functionalized ITO substrates, may point to a new exploitable oxide-based nanostructured material for biosensing applications. As a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested in this work. Interestingly, oxide-based materials are highly integrable with the silicon chip technology, which would permit the easy adaptation of such sensors into lab-on-a-chip configurations, providing benefits such as reduced size and weight to facilitate on-chip integration, and leading to low-cost mass production of microanalysis systems.

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Chang, Shang-Chou, and Huang-Tian Chan. "Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass." Crystals 9, no. 6 (June 17, 2019): 310. http://dx.doi.org/10.3390/cryst9060310.

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Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/N2) plasma with different N2 flows. The structure and optical and electrical properties of AZO/ITO films were surveyed. Experiment results indicated that N2 flow in H2/N2 plasma annealing of AZO/ITO films slightly modified the structure and electrical properties of AZO/ITO films. The X-ray diffraction peak corresponding to zinc oxide (002) crystal plane slightly shifted to a higher angle and its full width at half maximum decreased as the N2 flow increased. The electrical resistivity and the emissivity reduced for the plasma annealed AZO/ITO films when the N2 flow was raised. The optimum H2/N2 gas flow was 100/100 for plasma annealed AZO/ITO films in this work for low emissivity application. The emissivity and average visible transmittance for H2/N2 = 100/100 plasma annealed AZO/ITO were 0.07 and 80%, respectively, lying in the range of commercially used low emissivity glass.

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