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Journal articles on the topic 'Tin Oxide'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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1

Doyan, Aris, Susilawati Susilawati, and Lalu Muliyadi. "Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices." Jurnal Penelitian Pendidikan IPA 8, no. 6 (2022): 2772–77. http://dx.doi.org/10.29303/jppipa.v8i6.2657.

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The purpose of this study is to analyze the quality of optical properties such as energy band gap of thin layer of tin oxide doped with aluminum, tin oxide doped with fluorine, tin oxide doped with indium, tin oxide doped with aluminum-fluorine, tin oxide doped with aluminum-indium, and tin oxide doped with aluminum-fluorine-indium. The thin layer was synthesized using the sol-gel spin coating method. The ratio of basic ingredients and doping used in this study was 95:5% and 85:15%. The thin layer that has been formed is then heated at a temperature of 100 and 200 0C. The results of the analys
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2

Becker, Martin, Angelika Polity, Davar Feili, and Bruno K. Meyer. "Deposition of tin oxides by Ion-Beam-Sputtering." MRS Proceedings 1494 (2012): 153–58. http://dx.doi.org/10.1557/opl.2012.1650.

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ABSTRACTSynthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applicatio
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3

D. Dunn, Barrie, and Grazyna Mozdzen. "Tin oxide coverage on tin whisker surfaces, measurements and implications for electronic circuits." Soldering & Surface Mount Technology 26, no. 3 (2014): 139–46. http://dx.doi.org/10.1108/ssmt-12-2013-0040.

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Purpose – This paper aims to evaluate the morphology and thickness of oxides that form on the surfaces of tin whiskers. The problems related to the growth of tin whiskers are stated, and the relevance of oxide layers adhering to whiskers is discussed. Design/methodology/approach – Modern laboratory methods including focused ion beam sectioning, energy dispersive spectroscopy and X-ray photoelectron spectroscopy have been used to characterise the composition of oxides present on the surfaces of 48-year-old whiskers. These very old whiskers had nucleated and grown on electronic equipment stored
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4

Mohd Napi, Muhammad Luqman, Ng Kim Seng, and Mohd Khairul Ahmad. "Surface Morphology and Electrical Properties of FTO (Fluorine Doped Tin Oxide) with Different Precursor Solution for Transparent Conducting Oxide." Applied Mechanics and Materials 773-774 (July 2015): 682–85. http://dx.doi.org/10.4028/www.scientific.net/amm.773-774.682.

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Fluorine doped tin oxide (FTO) thin film was prepared by using two different precursor solutions which are tin (ii) chloride dihydrate and tin (iv) chloride pentahydrate. These two precursors are used in spray pyrolysis process to prepare the fluorine doped tin oxide thin film. Surface Morphology of the thin film was characterized using field emission scanning electron microscope (FE-SEM). FESEM image shows the particle distribution and the morphology of fluorine doped tin oxide thin film. Two point probe I-V measurement and UV-Vis spectroscopy were used to study the electrical and optical pro
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5

Kim, Taewoo, Vivek S. Devalla, Sara Dorr, and David P. Fenning. "(Digital Presentation) Electrochemical CO2-to-Formate Conversion on Metastable Tin Oxide Catalyst in a Catholyte-Free Electrolyzer." ECS Meeting Abstracts MA2022-01, no. 49 (2022): 2104. http://dx.doi.org/10.1149/ma2022-01492104mtgabs.

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Designing an efficient electrocatalysis system for CO2 conversion to desired value-added products with high selectivity and activity holds promise to enable carbon neutrality and industrial application. Herein, we construct and test two hypotheses: (1) metastable tin oxides play a critical role in enhancing CO2-to-formate conversion rather than metallic tin, and (2) a catholyte-free electrolyzer, where no electrolyte is present on the cathode side, enables highly concentrated formate generation. We prepare tin oxide thin films on a gas diffusion layer by thermal evaporation and confirm the co-
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6

Zhang, Yu-Xin, Chien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, Ni Xu, and Kai-Chien Tsai. "Effects of P-Type SnOx Thin-Film Transistors with N2 and O2 Ambient Furnace Annealing." Journal of Nanoscience and Nanotechnology 20, no. 7 (2020): 4069–72. http://dx.doi.org/10.1166/jnn.2020.17554.

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Recently oxide-based thin-film transistors (TFTs) are investigated for emerging applications of the next generation display devices and other electronic circuits (Fortunato, E., et al., 2012. Oxide semiconductor thin-film transistors: A review of recent advances. Advanced Materials, 24, pp.2945–2986). Despite of the great success in n-type oxide semiconductors with high transparency and high field-effect mobility, high performance P-type oxide TFTs are so highly desired that complementary circuits can be realized with low power and high performance (Ou, W.C., et al., 2008. Anomalous P-channel
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7

Hacınecipoğlu, Ayşe V., Metin Gençten, Melih B. Arvas, and Yucel Sahin. "Preparation of Spinel Form Co3O4 and CoO2 Thin Film at Low Temperature by Electrochemical Method as a Thin Film Oxide Layer." ECS Journal of Solid State Science and Technology 11, no. 8 (2022): 081014. http://dx.doi.org/10.1149/2162-8777/ac8a6f.

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In this work, thin films of cobalt oxides (CoO2, Co3O4) were prepared using the electrochemical method on the pencil graphite and indium tin oxide surfaces. The substrate effect in the production of both oxides has been studied in detail. While Co3O4 accumulates on the pencil graphite’s surface, CoO2 formation was observed on the indium tin oxide. The characterization of the cobalt oxides was carried out using the X-ray diffraction, Atomic force microscope, and Scanning electron microscope. In this context, the cobalt oxide crystal structure in the range of (−1.0 V)–(+1.9 V) was synthesized on
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8

Chayoukhi, S., B. Gassoumi, H. Dhifelaoui, A. Boukhachem, and M. Amlouk. "Nanomechanical behavior, adhesion and wear resistance of tin oxide coatings for biomedical applications." Materialwissenschaft und Werkstofftechnik 55, no. 4 (2024): 427–36. http://dx.doi.org/10.1002/mawe.202300242.

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AbstractThis study investigates the properties of tin oxide coatings employed in biomedical applications. The films were deposited on a clean glass substrate, preheated at 450 °C, applying the spray pyrolysis technique as the latter produces crystallized thin films without the need for further heat treatment. X‐ray diffraction analysis showed that tin oxide films had a tetragonal structure characterized by a preferential orientation (111). The measurements of reflectance and transmittance revealed a wide optical band gap of 4.0 eV. Nanoindentation tests showed that the tin oxide coating, with
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9

Lee, D. H., K. D. Vuong, J. A. A. Williams, J. Fagan, R. A. Condrate, and X. W. Wang. "RF aerosol plasma fabrication of indium tin oxide and tin oxide thin films." Journal of Materials Research 11, no. 4 (1996): 895–903. http://dx.doi.org/10.1557/jmr.1996.0111.

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Transparent, conductive indium-tin oxide (ITO) and tin oxide thin films were deposited on soda-lime-silicate (SLS) float glass and silica glass substrates by an RF aerosol plasma technique in an atmospheric environment. The ITO films were deposited from solutions with various In: Sn ratios. The dependence of the film properties on the substrate temperature, deposition time, and tin concentration has been studied. The films were characterized by several techniques including XRD, EDS, electrical resistivity, SEM, optical (IR-UV-Vis transmission), Mössbauer, and infrared spectroscopy. The results
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10

Almaev, Аleksei V., Viktor V. Kopyev, Vadim A. Novikov, et al. "ITO Thin Films for Low-Resistance Gas Sensors." Materials 16, no. 1 (2022): 342. http://dx.doi.org/10.3390/ma16010342.

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Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin
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11

Tigau, Nicolae, Romana Draşovean, and Simona Condurache-Bota. "Studies on physical properties of tin oxide films." Annals of the ”Dunarea de Jos” University of Galati. Fascicle II, Mathematics, Physics, Theoretical Mechanics 2, no. 46 (2023): 86–89. http://dx.doi.org/10.35219/ann-ugal-math-phys-mec.2023.2.05.

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This paper reports the study of some physical properties of thin films of tin oxide, such as the structural properties, surface morphology and optical transmission and reflection. The thin films of tin oxide were deposited by the method of thermal evaporation under vacuum. Transmission electron microscopy (TEM) was used to study the structural properties and the atomic force microscopy (AFM) method was used to study the surface morphology of thin films of tin oxide. The absorption and extinction coefficients of the investigated thin layers were determined from the transmittance and reflectance
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12

Guidoni, A. Giardini, V. Marotta, S. Orlando, and G. P. Parisi. "Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation." International Journal of Photoenergy 3, no. 4 (2001): 213–16. http://dx.doi.org/10.1155/s1110662x01000289.

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Reactive pulsed laser ablation is a very interesting method to deposit thin films of several materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a reactive atmosphere. In the case of oxides, reactions between the laser vaporized metals and oxygen lead to the formation of intermediate complexes and finally to oxide thin films. The reactivity of the plume has been already studied by our group in other oxides and nitrides productions and ascertained b
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13

Ivanov A. F., Egorov F. S., Platonov N. D., Matukhin V. L., and Terukov E. I. "Influence of the oxygen during the deposition of an indium tin oxide thin film by magnetron sputtering for heterojunction solar cells." Semiconductors 56, no. 3 (2022): 225. http://dx.doi.org/10.21883/sc.2022.03.53063.9747.

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Optoelectronic properties of indium and tin oxide thin films depending on the oxygen content in the total gas flow were experimentally investigated during deposition of these films by DC magnetron target sputtering. Relationship of the heterojunction thin-film solar cell output parameters vs. oxygen partial pressure in a vacuum vessel was examined during indium and tin oxide layer deposition. The maximum photovoltaic conversion efficiency of the solar cell was achieved at an oxygen partial pressure in the vacuum vessel of ~6.5 Torr. Keywords: heterojunction thin-film solar element, indium and
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14

Han, Dongsuk, Jaehyung Park, Minsoo Kang, Hyeongtag Jeon, and Jongwan Park. "Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping." Journal of Nanoscience and Nanotechnology 15, no. 10 (2015): 7606–10. http://dx.doi.org/10.1166/jnn.2015.11155.

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We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxi
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15

Chen, Yihong, and Matthew W. Kanan. "Tin Oxide Dependence of the CO2Reduction Efficiency on Tin Electrodes and Enhanced Activity for Tin/Tin Oxide Thin-Film Catalysts." Journal of the American Chemical Society 134, no. 4 (2012): 1986–89. http://dx.doi.org/10.1021/ja2108799.

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16

Du, Gang, Dao Li Zhang, Lan Zhao, Jian Mei Xu, and Dong Xiang Zhou. "On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process." Key Engineering Materials 280-283 (February 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.835.

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Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the expe
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17

Rajeswari, Parnandi Venkata, Yadavalli Venkata Pavana Kumar Raghava, Sumanta Kumar Tripathy, and Nidasanametla Soma Sundara Venkata Raja Rao. "Mo/W/Al doped tin oxide thin films: exploring optical and mechanical properties for transparent protective coating applications." European Physical Journal Applied Physics 96, no. 1 (2021): 10301. http://dx.doi.org/10.1051/epjap/2021210084.

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For the last few years research has been intensified in exploring and improving mechanical properties of tin oxide thin films besides the optical and electrical ones that enhances the film's functionality and broadens its application purview. The present investigation reports a comprehensive study on the effect of Mo, W, and Al doping on optoelectronic and mechanical properties of tin oxide thin films. The films exhibited an optical transparency over 350–400 nm with an average transmission of 85–98% at 550 nm and mechanical hardness spanning over 2–8 GPa, and electrically resistivity in the ra
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18

Zinchenko, Timur O., Ekaterina A. Pecherskaya, Vladimir V. Antipenko, Artem V. Volik, Yuriy A. Varenik, and Anastasiya E. Shepeleva. "Methodology for the Selection of Technological Modes for the Synthesis of Transparent Conducting Oxides with Desired Properties." Materials Science Forum 1049 (January 11, 2022): 198–203. http://dx.doi.org/10.4028/www.scientific.net/msf.1049.198.

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Transparent conducting oxides (TCOs) are widely used as a transparent electrode in various fields of opto-and semiconductor electronics. The main materials used today are indium-tin oxide, tin-antimony oxide and zinc-aluminum oxide. The authors have developed and improved the spray-pyrolysis method, which is one of the most promising methods of implementation in production. In this work, the study of tin dioxide doped with antimony coatings and the development of a methodology for the controlled synthesis of TCO, taking into account the effect of technological modes of deposition on the TCO pa
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19

Khandelwal, A., R. Shukla, and K. S. Sharma. "Effect of Different Compositions of Mixed Metal Oxides (Zinc Oxide and Tin Oxide) on Structural and Optical Properties for the Application of Window Layers in Solar Cells." Journal of Scientific Research 16, no. 1 (2024): 41–51. http://dx.doi.org/10.3329/jsr.v16i1.64157.

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Thin films of composite Zinc Tin Oxide (ZTO) are grown on glass substrates by thermal vapor evaporation. Thin films with different ratios of ZnO: SnO2= (90:10, 80:20, 70:30, 60:40 and 50:50) wt% were prepared and annealed at 500 °C for 2 h. The X-ray diffraction (XRD) patterns reveal that the ZTO films have become polycrystalline as we increase the percentage of tin oxide. The crystallinity of films also increases significantly. The field emission scanning electron microscopy (FESEM) results indicate that the percentage of tin oxide changes the film's morphology. UV visible spectroscopy of the
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20

Wohlmuth, Walter, and Ilesanmi Adesida. "Properties of R.F. magnetron sputtered cadmium–tin–oxide and indium–tin–oxide thin films." Thin Solid Films 479, no. 1-2 (2005): 223–31. http://dx.doi.org/10.1016/j.tsf.2004.11.186.

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21

Górnicka, Barbara, Bolesław Mazurek, Witold Mielcarek, Krystyna Prociów, and Joanna Warycha. "Synthesis of Nano-Powder Materials Using Spray-Pyrolysis Method." Solid State Phenomena 128 (October 2007): 13–20. http://dx.doi.org/10.4028/www.scientific.net/ssp.128.13.

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In this work the laboratory–scale installation for synthesising powder materials with nano-size grains is presented. Nano-sized zinc and tin oxides were obtained using the spraypyrolysis (SP) method. The zinc oxide was derived from zinc acetate at 300oC, 430oC, 580 oC, 800oC and 950oC. The tin oxide was processed by the thermal decomposition of tin tartrate at 500oC. The SP synthesized zinc oxide was used for manufacturing a methane sensor which was characterized as possessing a much wider range of operating and substantially higher sensitivity, 10 times higher, to methane gas compared to a se
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Harrison, Philip G., and Barry Maunders. "Tin oxide surfaces. Part 15.—Infrared study of the adsorption of propene on tin(IV) oxide, tin(IV) oxide–silica and tin(IV) oxide–palladium oxide." Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases 81, no. 6 (1985): 1329. http://dx.doi.org/10.1039/f19858101329.

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23

Pandya, H. J. "Thin-film tin oxide ethanol sensor." International Journal of Signal and Imaging Systems Engineering 2, no. 1/2 (2009): 3. http://dx.doi.org/10.1504/ijsise.2009.029323.

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24

Presley, R. E., C. L. Munsee, C.-H. Park, D. Hong, J. F. Wager, and D. A. Keszler. "Tin oxide transparent thin-film transistors." Journal of Physics D: Applied Physics 37, no. 20 (2004): 2810–13. http://dx.doi.org/10.1088/0022-3727/37/20/006.

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25

Doyan, Aris, Susilawati, Ahmad Harjono, Syifa Azzahra, and Muhammad Taufik. "Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device." Materials Science Forum 966 (August 2019): 30–34. http://dx.doi.org/10.4028/www.scientific.net/msf.966.30.

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Antimony tin oxide coating research has been carried out using a spin sol gel coating method with different doping concentrations (0, 5, 10, 15, 20)%. The results of the study on the morphological structure (SEM) of thin films that have been carried out showed more cracks on the surface of the morphology of thin layers without doping compared to thin layers with doping antimony. The Results of crystal structure of XRD in thin antimony doping tin oxide layer shows the grinding index of tin oxide crystals, 101, 110, 211, 220. In grain size, with increasing antimony doping percentage, the average
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Akinsola, S. I., K. S. Adedayo, A. B. Alabi, D. B. Olanrewaju, A. A. Ajayi, and O. A. Babalola. "Spray Pyrolysed Nanostructured Gold-Doped Tin Oxide (Auto) Thin Films." Journal of Applied Sciences and Environmental Management 25, no. 4 (2021): 567–72. http://dx.doi.org/10.4314/jasem.v25i4.12.

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Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide band gap semiconductor material whose film is deposited on glass substrate. A gold nanoparticle-doped tin oxide thin film (AuTO) was also prepared. UV-VIS (ultraviolet visible) spectroscopy and four-point probe analysis are done for optical and electrical analysis. UV-Visible absorption spectra show that the band gap of SnO2 thin film is 3.78 eV and 3.82 eV for AuTO. Band gap of SnO2 thin film can be tuned that it can be used
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27

Chen, Zhuofa, Dedong Han, Nannan Zhao, et al. "Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide." Japanese Journal of Applied Physics 54, no. 4S (2015): 04DF03. http://dx.doi.org/10.7567/jjap.54.04df03.

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Noaman, Sura Ali, Rashid Owaid Kadhim, and Saleem Azara Hussain. "Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique." JOURNAL OF ADVANCES IN PHYSICS 12, no. 3 (2016): 4394–99. http://dx.doi.org/10.24297/jap.v12i3.45.

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Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon substrates by thermal evaporation technique. X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape. Optical
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29

Nakazawa, Hikaru, Mitsuo Umetsu, Tatsuya Hirose, Takamitsu Hattori, and Izumi Kumagai. "Identification of Indium Tin Oxide Nanoparticle-Binding Peptides via Phage Display and Biopanning Under Various Buffer Conditions." Protein & Peptide Letters 27, no. 6 (2020): 557–66. http://dx.doi.org/10.2174/0929866526666191113151934.

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Background: By recent advances in phage-display approaches, many oligopeptides exhibiting binding affinities for metal oxides have been identified. Indium tin oxide is one of the most widely used conductive oxides, because it has a large band gap of 3.7–4.0 eV. In recent years, there have been reports about several ITO-based biosensors. Development of an ITO binding interface for the clustering of sensor proteins without complex bioconjugates is required. Objective: In this article, we aimed to identify peptides that bind to indium tin oxide nanoparticles via different binding mechanisms. Meth
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Kim, K. B., A. S. Lenshin, F. M. Chyragov, and S. I. Niftaliev. "FORMATION OF NANOSTRUCTURED TIN OXIDE FILM ON POROUS SILICON." Azerbaijan Chemical Journal, no. 3 (September 19, 2023): 83–89. http://dx.doi.org/10.32737/0005-2531-2023-3-83-89.

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Porous silicon is actively used in the fabrication of sensors and detectors because of its large specific surface area, which is an important characteristic for gas adsorption. To improve the operating parameters of the sensors and increase the stability of operation, a film of tin oxide was deposited on the substrate of porous silicon by vacuum-thermal evaporation. The choice of tin is due to its wide forbidden zone, low cost, and high sensitivity. Porous silicon was obtained by the electrochemical anodization of single-crystalline silicon KEF (100). The data on morphology, composition and op
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Pandit, Nayeem Ahmad, and Tokeer Ahmad. "Tin Oxide Based Hybrid Nanostructures for Efficient Gas Sensing." Molecules 27, no. 20 (2022): 7038. http://dx.doi.org/10.3390/molecules27207038.

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Tin oxide as a semiconductor metal oxide has revealed great potential in the field of gas sensing due to its porous structure and reduced size. Especially for tin oxide and its composites, inherent properties such as high surface areas and their unique semiconducting properties with tunable band gaps make them compelling for sensing applications. In combination with the general benefits of metal oxide nanomaterials, the incorporation of metal oxides into metal oxide nanoparticles is a new approach that has dramatically improved the sensing performance of these materials due to the synergistic
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Sarradin, J., N. Benjelloun, G. Taillades, and M. Ribes. "Tin/tin oxide thin film electrodes for lithium-ion batteries." Journal of Power Sources 97-98 (July 2001): 208–10. http://dx.doi.org/10.1016/s0378-7753(01)00542-0.

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33

Young, Jay A. "Tin(II) Oxide." Journal of Chemical Education 85, no. 2 (2008): 193. http://dx.doi.org/10.1021/ed085p193.

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34

Clark, Edward N., and Philip G. Harrison. "Tin oxide surfaces." Journal of Organometallic Chemistry 463, no. 1-2 (1993): 85–90. http://dx.doi.org/10.1016/0022-328x(93)83402-h.

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35

Wang, Fang, Yang Chao, Ming Han Xu, et al. "Preparation of Tin Oxide Nanometer Thin Films by Hydrothermal Method." Solid State Phenomena 279 (August 2018): 197–201. http://dx.doi.org/10.4028/www.scientific.net/ssp.279.197.

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Given the shortage of energy reserves, new energy sources must be identified. In this regard, improving the efficiency of solar cell conversion and simplifying the solar cell technology have become the focus of research. In this study, tin oxide nanometer thin film was fabricated on FTO conductive glass as photocathode through hydrothermal method. The synthesis condition was regulated, and performance test was also conducted. Results show that the crystallization driving force, crystallization rate, and grain size of tin dioxide crystal increase with increasing alkali ratio, leading to disorga
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Pa, P. S. "A Reclamation System via a Pins-Module Tool for Touch Sensing Material Surfaces." Applied Mechanics and Materials 372 (August 2013): 321–24. http://dx.doi.org/10.4028/www.scientific.net/amm.372.321.

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This study demonstrates a designed pins-module tool and a precise reclamation system using a micro electroremoval process for sensing material of tin-doped indium oxide thin-films dissolved from a surface of polyethylene terephthalate of touch-panel. In the current experiment, a higher dissolution rate of the defective tin-doped indium oxide corresponds to high rotational speed of the cylinders tool with large flow rate of the electrolyte. A small diameter of the anode or a small diameter of the cathode combined with enough electric power, results in fast dissolution. The removal rate of tin-d
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37

Reshma, R. P., N. S. Abishek, and K. Naik Gopalakrishna. "Synthesis and characterization of graphene oxide, tin oxide, and reduced graphene oxide-tin oxide nanocomposites." Inorganic Chemistry Communications 165 (July 2024): 112451. http://dx.doi.org/10.1016/j.inoche.2024.112451.

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38

Fung, M. K., K. K. Wong, X. Y. Chen, et al. "Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition." Current Applied Physics 12, no. 3 (2012): 697–706. http://dx.doi.org/10.1016/j.cap.2011.10.006.

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Koo, B. R., J. W. Bae, and H. J. Ahn. "Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires." Archives of Metallurgy and Materials 62, no. 2 (2017): 1275–79. http://dx.doi.org/10.1515/amm-2017-0192.

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AbstractWe fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 25
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40

Mahmoud, Arshad Ahmed, and Mohammad J.F. "Copper Doping Effect on Nanocrystalline Tin Oxide (SnO2) Thin Films for Gas Sensing Applications." NeuroQuantology 20, no. 5 (2022): 723–28. http://dx.doi.org/10.14704/nq.2022.20.5.nq22228.

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In this work, Nanocrystalline SnO2 and copper doped SnO2 with (SnO2:Cu, Cu: 1%, 3%, 5%) was grown on glass substrates at (350 °C) via chemical pyrolysis method. The results of the structural properties using XRD analysis showed that The films have diffraction angles of different intensities and have a tetragonal crystal structure. The intensity decreases with an increased doping ratio. Atomic force microscopy showed that with increasing copper doping, the average grain size decreased. Transmittance of the prepared films is greater than 70% at 550 nm. The energy gap of the calculated tin oxide
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41

Tian, Hongxia, Guoliang Wang, Feng Wang, Chengming Jiang, and Jijie Huang. "Si integration of La0.7Sr0.3MnO3:BiFeO3 nanocomposite thin films with strong exchange bias coupling." Applied Physics Letters 121, no. 2 (2022): 022403. http://dx.doi.org/10.1063/5.0101998.

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Integrating functional oxide-based nanocomposite thin films on Si wafer is a large step toward their applications in electronics and spintronics. Here, to overcome the large lattice mismatch and potential inter-diffusion between the complex oxides and Si, a set of buffer layers of SrRuO3 (SRO)/TiN have been applied. The La0.7Sr0.3MnO3:BiFeO3 system has been selected to grow on the SRO/TiN buffered Si, and the nanocomposite films exhibit highly textured growth along the c direction for both phases. The microstructure study shows a typical vertically aligned nanocomposite structure of the films,
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42

Harrison, Philip G., and Barry Maunders. "Tin oxide surfaces. Part 14.—Infrared study of the adsorption of ethane and ethene on tin(IV) oxide, tin(IV) oxide–silica and tin(IV) oxide–palladium oxide." Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases 81, no. 6 (1985): 1311. http://dx.doi.org/10.1039/f19858101311.

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43

Buntem, R., P. Kraisingdecha, and W. Sadee. "Fluoride and Antimony-Doped Tin Oxide Film by Spray Pyrolysis." Advanced Materials Research 55-57 (August 2008): 513–16. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.513.

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Thin films of undoped, fluoride- and antimony- doped tin oxide on glass were prepared by spray pyrolysis technique. The aerosols were atomized from precursor solution by a commercial ultrasonic generator. Tin chloride(SnCl2.2H2O), ammonium fluoride (NH4F), and antimony chloride (SbCl3) were used as a source for tin, fluoride, and antimony respectively. For the undoped tin oxide film, the solution of 0.8 M tin chloride was used as a precursor solution. While fluoride-doped tin oxide films (FTO), the solution of 0.8 M SnCl2.2H2O in ethanol and varying amounts of NH4F dissolved in 0.2 M HCl (0.6
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44

Ozcariz, Aritz. "Development of Copper Oxide Thin Film for Lossy Mode Resonance-Based Optical Fiber Sensor." Proceedings 2, no. 13 (2018): 893. http://dx.doi.org/10.3390/proceedings2130893.

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In this work we present the study of copper(II) oxide thin films for the fabrication of lossy mode resonance-based (LMR) optical fiber sensors. This material has proven to be capable of generating such resonances with a promising result. Their optimal optical properties have allowed the achievement of a sensitivity of 7234 nm/RIU, higher than that obtained with other metal oxides such a SnO2, indium tin oxide (ITO), aluminum doped zinc oxide (AZO) or indium-gallium-zinc oxide (IGZO). The use of this new film may facilitate the use of LMR based sensors for applications that require maximum sens
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Rauf, IA, and LM Brown. "Microstructure of amorphous indium oxide and tin oxide thin films." Scripta Metallurgica et Materialia 30, no. 6 (1994): 797–801. http://dx.doi.org/10.1016/0956-716x(94)90202-x.

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46

Brokken-Zijp, J. C. M., O. L. J. van Asselen, W. E. Kleinjan, R. van de Belt, and G. de With. "Photocatalytic Properties of Tin Oxide and Antimony-Doped Tin Oxide Nanoparticles." Journal of Nanotechnology 2011 (2011): 1–15. http://dx.doi.org/10.1155/2011/106254.

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For the first time it is shown that N-doped SnO2nanoparticles photocatalyze directly the polymerization of the C=C bonds of (meth)acrylates under visible light illumination. These radical polymerizations also occur when these particles are doped with Sb and when the surfaces of these particles are grafted with methacrylate (MPS) groups. During irradiation with visible or UV light the position and/or intensity of the plasmon band absorption of these nanoparticles are always changed, suggesting that the polymerization starts by the transfer of an electron from the conduction band of the particle
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47

Hönle, Michael, Peter Oberhumer, Kurt Hingerl, Thorsten Wagner, Sophia Huppmann, and Simeon Katz. "Mechanism of indium tin oxide//indium tin oxide direct wafer bonding." Thin Solid Films 704 (June 2020): 137964. http://dx.doi.org/10.1016/j.tsf.2020.137964.

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48

Czarnowska, E., A. Sowinska, B. Cukrowska, Jerzy Robert Sobiecki, and Tadeusz Wierzchoń. "Response of Human Osteoblast-Like Cells and Fibroblasts to Titanium Alloy Nitrided under Glow Discharge Conditions." Materials Science Forum 475-479 (January 2005): 2415–18. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2415.

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Cell adhesion to biomaterials and cell proliferation are affected, among others, by the chemical composition and surface microtopography of the biomaterial. These are, in turn, influenced by sterilisation processes. The aim of this study was to evaluate the sensitivity of osteoblasts and fibroblasts to TiN surfaces deprived of an oxide film or with an enhanced oxide film due to sterilisation in plasma or in an autoclave, respectively. Type TiN+T2N+aTi(N) nitrided surface layers were produced under glow discharge conditions and sterilized in plasma Sterrad 100 and in a steam autoclave. The resu
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Li, Jun Shou, Xiao Juan Wu, Ming Yuan Wang, and Fang Zhao. "The Preparation Technology of SnO2 Nanowires Based on the System of Al-SnO-Cu2O." Advanced Materials Research 1058 (November 2014): 20–24. http://dx.doi.org/10.4028/www.scientific.net/amr.1058.20.

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Aluminum powder, stannous oxide powder and cuprous oxide powder are used for the preparation of tin oxide nanostructure in combustion synthesis-injection method with the formula designed using combinatorial chemistry method. The composition range of tin oxide nanostructure synthesis has been studied and the best formula of tin oxide nanowires synthesis has been screened. The research shows that the effective ingredient scope of tin oxide nanostructure is Al=30%~60%, CuO2=10%~50%, SnO=20% ~50% (mol), the main form of tin oxide nanostructure is nanowire and there are also forms such as nanorod,
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Md.Yassin, Fouziah, Saturi Baco, and Noraini Abdullah. "Multiple Regression Model on Optical Properties of Tin Oxide Thin Film." Advanced Materials Research 1107 (June 2015): 520–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.520.

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Tin Oxide (SnO2) thin film is one of the important transparent conducting oxides (TCOs) due to its electrical and optical transparency in visible light spectrum. This study presents the best model in estimating optical properties of tin oxide thin film which is performed using the absorption coefficient of the film. The annealing temperature is at 473 K prepared by radio frequency sputtering technique. Twelve multiple regression (MR) models with interactions are generated from three independent variables (transmission spectra, energy band gap and the wavelength of light). They are developed fr
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