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Dissertations / Theses on the topic 'Tin selenide'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Afrin, Shakila. "Investigation of Electronic and Optical Properties of 2-Dimensional Semiconductor Tin Selenide (SnSe) Thin Films." PDXScholar, 2019. https://pdxscholar.library.pdx.edu/open_access_etds/4862.

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Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years. However, the trend of transistor miniaturization is fast approaching its limit. Hence, alternate and innovative solutions are necessary to tackle thi

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2

Worth, Nicholas Gower. "Theoretical studies of compressed xenon oxides, tin selenide thermoelectrics, and defects in graphene." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/274462.

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Enormous advances in computing power in recent decades have made it possible to perform accurate numerical simulations of a wide range of systems in condensed matter physics. At the forefront of this progress has been density functional theory (DFT), a very popular approach to tackling the complexity of quantum-mechanical systems that very often strikes a good balance between accuracy and tractability in light of the finite computational resources available to researchers. This thesis describes work utilising DFT methods to tackle two distinct problems. Firstly, the theoretical prediction of s

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3

Kamada, Rui. "Copper(indium,gallium)selenide film formation from selenization of mixed metal/metal-selenide precursors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 226 p, 2009. http://proquest.umi.com/pqdweb?did=1654501631&sid=4&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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4

Liu, Shuhao. "Electronic Transport in Functional Materials and Two-Dimensional Hole System." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1522893320666086.

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5

Houllemare, Didier. "Allylation de dérivés carbonylés dans l'eau. Synthèse et réactivité de sélénoéthers β-hydroxylés delta-insaturés". Rouen, 1997. http://www.theses.fr/1997ROUES076.

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L'allylation et la propargylation de dérivés carbonylés par l'étain dans l'eau sont étudiées. L'ajout d'iodure de potassium autorise l'utilisation de dérivés chlorés allyliques de structures variées, connus pour leur très faible réactivité. Nous montrons que la substitution halogénure-iodure s'effectue dans l'eau avant réaction. L'étude de l'allylation par le système chlorure stanneux/iodure de potassium, dans le même solvant, nous a permis de déterminer les meilleures conditions expérimentales. Seuls les aldéhydes sont réactifs. Les dérivés chlorés dans ces conditions sont aussi utilisables.

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6

Rickman, Sarah. "Growth and characterization of molybdenum disulfide, molybdenum diselenide, and molybdenum(sulfide, selenide) formed between molybdenum and copper indium(sulfide, selenide) during growth." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 0.94 Mb., 85 p, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:1435848.

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7

Colakoglu, Tahir. "The Growth And Characterization Of Galium Selenide Thin Films." Master's thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/4/1085240/index.pdf.

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GaSe thin films were deposited by thermal evaporation technique with and without Cd doping. X-ray analysis showed that the crystallinity increases in (1014) preferred orientation direction with annealing for doped and undoped films. The room temperature conductivity and mobility values of the samples were found to be for doped and undoped films in between 1.3&times<br>101 - 3.4&times<br>102 (&amp<br>#8486<br>-cm)-1, 1.2&times<br>10-6 - 1.5&times<br>10-6 (&amp<br>#8486<br>-cm)-1 and 5.9 &amp<br>#8211<br>20.9 (cm2/V.s) (for doped samples only), respectively. Due to the high resistivity of the un

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8

Oduor, A. O. "Electronic transport properties in evaporated cadmium selenide thin films." Thesis, Keele University, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388869.

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9

Sapkota, Yub Raj. "PHYSICAL PROPERTIES OF TOPOLOGICAL INSULATOR: BISMUTH SELENIDE THIN FILMS." OpenSIUC, 2017. https://opensiuc.lib.siu.edu/theses/2261.

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Topological Insulator (TI) is new classes of materials with gapless surface states and insulating bulk. The topological connection can be traced back to the discovery of Integer Quantum Hall Effect in 1980. In the last decade, new categories of topological insulators were predicted and later discovered, that have gained a lot of attraction for room-temperature applications. Since the experimental observation of single Dirac cone on the surface states of Bismuth selenide (Bi2Se3) in 2009, it has emerged as the prototype. Bismuth Selenide has one of the highest bulk band gaps of 0.3 eV among all

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10

Nader, Adel. "Supraconductivité des composés lamellaires incommensurables." Grenoble INPG, 1997. http://www.theses.fr/1997INPG0013.

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Les composes lamellaires incommensurables sont construits par l'alternance d'une ou deux couches imxi et d'un, deux ou trois feuillets itx#2i ou m : pb, sn, bi, sb ou terre rare, t : nb, ta, ti, v et x : s ou se. La commensurablite entre les deux sous structures des deux types couches est parfaite selon les axes b et c, or selon l'axe a les parametres de maille ont un rapport qui s'approche de 3 d'ou le nom incommensurables. Certains de ces composes sont supraconducteurs avec des temperatures critiques entre 0,4 k et 5,5 k. Nous avons etudie le comportement du champ magnetique critique de ces

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11

Heath, Jennifer Theresa. "Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films /." view abstract or download file of text, 2002. http://wwwlib.umi.com/cr/uoregon/fullcit?p3072587.

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Thesis (Ph. D.)--University of Oregon, 2002.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 143-148). Also available for download via the World Wide Web; free to University of Oregon users.

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12

Thompson, John O. "The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6197.

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Thesis (Ph. D.)--University of Oregon, 2007.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 81-84). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.

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13

Boscher, Nicolas D. "Atmospheric pressure chemical vapour deposition of transition metal selenide thin films." Thesis, University College London (University of London), 2006. http://discovery.ucl.ac.uk/1444549/.

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This thesis investigates the formation of thin films of metal selenides via atmospheric pressure chemical vapour deposition (APCVD). The films and powders produced were characterised by SEM, EDAX/WDX, XPS, XRD, Raman, SQUID, reflectance and absorbance measurements. The APCVD reaction of TiCl4, V(NMe2)4 and NbCl5 with fBu2Se were respectively found to be a convenient route to stable and crystalline titanium, vanadium and niobium diselenide films. The use of VCI4 and VOCI3 showed that they were both found unsuitable for producing VSe2 from the APCVD reaction with 'Bu2Se. Molybdenum and tungsten

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14

Stephens, Scott H. "Modeling optical properties of thin film copper(indium,gallium)selenide solar cells using spectroscopic ellipsometry." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 0.69 Mb., 88 p, 2006. http://wwwlib.umi.com/dissertations/fullcit/1432297.

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15

Langford, Richard Mark. "Growth and characterisation of cadmium selenide thin films applicable to a liquid crystal light valve." Thesis, Imperial College London, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.266074.

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16

Ullah, Shafi. "THIN FILM SOLAR CELLS BASED ON COPPER-INDIUMGALIUM SELENIDE (CIGS) MATERIALS DEPOSITED BY ELECTROCHEMICAL TECHNIQUES." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/86290.

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The improvement of low cost, efficient photovoltaic devices is a leading technological challenge in the recent decade. There is a need to develop scalable and high-throughput manufacturing techniques that could reduce costs and improve manufacturing of chalcogenide solar cells. Copper, indium, gallium, and selenium (CIGS) Thin films polycrystalline heterojunction solar cells appear to be most appropriate with to cost and ease of manufacture. Currently Cu (In,Ga) (Se, S)2 materials hold the highest record cell efficiency of 22.3% in laboratory scale for thin films solar cells and the efficiency

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17

Adams, Jonathan A. "A surface and interface study of aluminum selenide on silicon : growth and characterization of thin films /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9797.

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18

Albin, David Scott. "Fabrication and structural, optical, and electrical characterization of multisource evaporated copper-gallium-selenide polycrystalline thin films." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184745.

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Theoretical considerations for the use of chalcopyrite ternary I-III-VI₂ compounds in heterojunction photovoltaic conversion devices are presented, followed by an in-depth study of the structural, optical, and electrical characteristics of multi-source evaporated CuGaSe₂ thin films as determined by processing. Film composition was identified as the primary variable for affecting the microstructure and optical-electrical behavior of the films. Film composition was in turn dependent upon elemental flux rates and substrate related effects. Films deposited on glass and bare alumina substrates were

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19

Lu, Chih-Yuan. "Group III-selenides : new silicon compatible semiconducting materials for phase change memory applications /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10610.

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20

Schroeder, Thomas Benjamin 1965. "Indirect detection of selenium-77, tin-119, and tellurium-125 by nuclear magnetic resonance spectroscopy." Diss., The University of Arizona, 1997. http://hdl.handle.net/10150/282308.

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Nuclear magnetic resonance experiments were performed on a series of selenium model compounds, tellurium model compounds, a tin model compound, a selenium metabolite that is an excretory product, and a selenoprotein. ¹H-{⁷⁷Se}, ¹H-{¹¹⁹Sn},¹H-{¹²⁵Te}, and ¹H-{¹²³Te} heteronuclear multiple quantum coherence experiments were performed for the first time on these compounds. In all cases the use of indirect detection substantially increased the sensitivity of observing these nuclei. Coupling constants between 9.4 and 54.2 Hz were successful on selenium compounds and coupling constants between 14.3

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21

Mukati, Kapil. "An alternative structure for next generation regulatory controllers and scale-up of copper(indium gallium)selenide thin film co-evaporative physical vapor deposition process." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 311 p, 2007. http://proquest.umi.com/pqdweb?did=1397912441&sid=12&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2007.<br>Principal faculty advisor: Babatunde Ogunnaike, Dept. of Chemical Engineering, and Robert W. Birkmire, Dept. of Materials Science & Engineering. Includes bibliographical references.

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22

Thompson, Christopher P. "Characterization of photocurrent and voltage limitations of copper(indium,gallium)selenide thin-film polycrystalline solar cells." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 98 p, 2009. http://proquest.umi.com/pqdweb?did=1663116611&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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23

Bouich, Amal. "Study and Characterization of Hybrid Perovskites and Copper-Indium-Gallium Selenide thin films for Tandem Solar Cells." Doctoral thesis, Universitat Politècnica de València, 2021. http://hdl.handle.net/10251/160621.

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[ES] El objetivo principal de esta tesis es contribuir al avance de nuevas técnicas de elaboración con bajo coste, utilizando materiales tipo de cobre, indio, galio y selenio CIGS y Perovskita para aplicaciones en energía solar fotovoltaica. CIGS parecen ser adecuadas ya que son de bajo costo de producción y se han reportado eficiencias de conversión del 23,35%. Por otro lado, las perovskitas híbridas de haluros de plomo orgánicos-inorgánicos han aparecido como nuevos materiales excepcionales para celdas solares, especialmente porque la eficiencia de las celdas solares basadas en perovskita ha

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24

Cheong, H., D. Nam, Анатолій Сергійович Опанасюк, et al. "Raman investigation on ZnS, ZnSe, ZnTe thin films obtained by CSVS technique." Thesis, Sumy State University Publishing, 2012. http://essuir.sumdu.edu.ua/handle/123456789/29350.

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У цій роботі були досліджені спектри комбінаційного розсіювання в тонких напівпровідникових плівках сульфіду цинку, селеніду цинку і телуриду цинку, нанесених за допомогою методу вакуумної сублімації в квазізамкнутом об'ємі. Всі плівки показали поздовжні оптичні репліки фононної моди. Зміна температури підкладки в результаті призвела до невеликим зміщень фононних частот в ZnSe і ZnTe, але не в тонких плівок ZnS. При цитуванні документа, використовуйте посилання http://essuir.sumdu.edu.ua/handle/123456789/29350<br>В этой работе были исследованы спектры комбинационного рассеяния в тонких полупр

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25

Опанасюк, Анатолій Сергійович, Анатолий Сергеевич Опанасюк, Anatolii Serhiiovych Opanasiuk, et al. "Raman Investigation on ZnS, ZnSe, ZnTe Thin Films Obtained by CSVS Technique." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35100.

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In this work, Raman spectra of zinc sulfide, zinc selenide, and zinc telluride thin film semiconductors deposited by the close-spaced vacuum sublimation technique were investigated. All of the films showed longitudinal optical phonon mode replicas. Varying the substrate temperature results in small shifts of the phonon frequencies in ZnSe and ZnTe, but not in ZnS thin films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35100

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26

Turunen, Marcus. "Gas flow sputtering of Cu(In,Ga)Se2 with extra selenium supply." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-260684.

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In this thesis CIGS absorber layers have been deposited by gas flow sputtering with an extra supply of selenium, a method that displays promise for large scale production because of its one-step sputtering route which deposits low energy particles in a high deposition rate. In this thesis a method was developed where selenium was added to the sputtering process inside the sputter chamber in a controllable manner and in larger amount than done in previous projects. A total of five samples were manufactured with altered evaporation temperatures and an extra supply of selenium which then were fin

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27

Rhoades, Matthew W. "Pulsed Laser Deposition and Electrical Properties of Zinc Selenide Based Thin Film Structures for Integration with Mid-infrared Applications." Thesis, The University of Alabama at Birmingham, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10787536.

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<p> Thin films of chlorine (Cl) and copper (Cu) doped zinc selenide (Cl:ZnSe and Cu:ZnSe) were fabricated by pulsed laser deposition (PLD) with the goal of enabling a multilayered semiconductor structure for a mid-infrared (mid-IR) electrically excited laser. Doping of ZnSe is achieved by varying the mass ratio of zinc chloride (ZnCl<sub>2</sub>) or copper selenide (Cu<sub>2</sub>Se) to ZnSe precursors in starting pressed powder targets. Appropriate adjustment of the fraction of dopant precursor in the mixtures allows for the control of the dopant concentration, N<i><sub>D</sub></i>–N<i>

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28

Ohta, Taisuke. "Heteroepitaxy of gallium-selenide on Si(100) and (111) : new silicon-compatible semiconductor thin films for nano structure formation /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/10592.

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29

Su, Sheng-Han [Verfasser]. "Investigations into Rare-Earth Metal(III) Oxoselenates(IV) and Ultra-Thin Layered Selenides / Sheng-Han Su." München : Verlag Dr. Hut, 2018. http://d-nb.info/1164293583/34.

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30

Rosen, Gregory Todd. "X-ray Absorption Fine Spectroscopy of Amorphous Selenium Nanowires." Ohio University Honors Tutorial College / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1294448896.

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31

Kulkarni, Sachin Shashidhar. "Effect of composition, morphology and semiconducting properties on the efficiency of CuIn₁₋x̳Gax̳Se₂₋y̳Sy̳ thin-film solar cells prepared by rapid thermal processing." Orlando, Fla. : University of Central Florida, 2008. http://purl.fcla.edu/fcla/etd/CFE0002467.

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32

Kamal, Abdelhamied Saber Suzan. "Synthesis and characterization of some nano-selenides and their applications in solar cells." Doctoral thesis, Universitat Politècnica de València, 2018. http://hdl.handle.net/10251/107389.

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Resumen (Castellano) El aumento del consumo de energía global junto con las preocupaciones ambientales ha generado mucho interés por las fuentes de energía alternativas y limpias, como la energía solar fotovoltaica. Los investigadores en la comunidad fotovoltaica han estado buscando formas de reducir costos mientras mantienen o aumentan las eficiencias. Una mejor comprensión de los materiales implicados es esencial para el rápido desarrollo de nuevas tecnologías. Las películas delgadas I-III-VI2 ofrecen sistemas prometedores para lograr células solares de alta eficiencia a un costo menor. De h

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33

Martinho, Filipe Mesquita Alves. "Development of CZTSSe thin film solar cells with inclusion of selenium in the precursor stack." Master's thesis, Universidade de Aveiro, 2017. http://hdl.handle.net/10773/23375.

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Mestrado em Engenharia Física<br>Os compostos designados como CZTS (Cu2ZnSnS4, Cu2ZnSnSe4 e Cu2ZnSn(Sx, Se1-x)4) constituem atualmente uma das maiores promessas para produção de células solar à escala de TW, devido ao uso de elementos abundantes e ambientalmente benignos, ao contrário dos compostos equivalentes no sistema CIGS. Contudo, ainda é necessário ultrapassar algumas barreiras de modo a atingir níveis de performance necessários para o desenvolvimento à escala industrial desta tecnologia. Uma tendência de investigação promissora consiste em introduzir uma gradação vertical no ba

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34

Pethe, Shirish A. "Optimization of process parameters for reduced thickness CIGSeS thin film solar cells." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4623.

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With the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All research activities are focused on developing various technologies that are capable of converting sunlight

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35

Lambert, Darcy Erin. "Nanostructured Extremely Thin Absorber (ETA) Hybrid Solar Cell Fabrication, Optimization, and Characterization." PDXScholar, 2011. https://pdxscholar.library.pdx.edu/open_access_etds/637.

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Traditional sources of electrical energy are finite and can produce significant pollution. Solar cells produce clean energy from incident sunlight, and will be an important part of our energy future. A new nanostructured extremely thin absorber solar cell with 0.98% power conversion efficiency and maximum external quantum efficiency of 61% at 650 nm has been fabricated and characterized. This solar cell is composed of a fluorine-doped tin oxide base layer, n-type aluminum doped zinc oxide nanowires, a cadmium selenide absorber layer, poly(3-hexylthiophene) as a p-type layer, and thermally evap

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Wang, Ziyan, and 王子砚. "MBE growth of AlInN and Bi2Se3 thin films and hetero-structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47163483.

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Molecular Beam Epitaxy is an advanced method for the synthesis of single-crystal thin-film structures. However, the growth behavior varies case by case due to the complicated kinetic process. In this thesis, the epitaxial growth processes of AlxIn1-xN alloy and Bi2Se3 thin-films are studied. Heteroepitaxial growth of AlxIn1-xN alloy on GaN(0001) substrate is carried out in the Nitrogen-rich flux conditions. A series of transient growth stages are identified from the initiation of the deposition. A significant effect of source beam-flux on the incorporation rate of Indium atoms is obser

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37

Hsu, Chih-An. "Absorber and Window Study – CdSexTe1-x/CdTe Thin Film Solar Cells." Scholar Commons, 2019. https://scholarcommons.usf.edu/etd/7813.

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CdTe an II-VI semiconductor has been a leading thin film photovoltaic material due to its near ideal bandgap and high absorption coefficient [1]. The typical thin film CdTe solar cells have been of the superstrate configuration with CdS (Eg-2.42eV) as the n-type heterojunction partner. Due to the relatively narrow bandgap of CdS, a wider bandgap n-type window layer has recently emerged as a promising substitute: alloys of MgyZn1-yO have been successfully used as the emitter or window layer. The benefits in the usage of MgyZn1-yO (MZO) are its tunable bandgap and wide optical spectrum on opt

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38

Safoula, Gabriel. "Caracterisation des couches minces polycristallines de selenium dope par un halogene (cl, i) et etude des interfaces metal-selenium (m = cr, bi, te)." Nantes, 1988. http://www.theses.fr/1988NANT2018.

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L'effet du dopage a ete analyse par diffraction rx, microscopie electronique a balayage, spectrometrie de masse des ions secondaires, diffusion raman, emission photoelectronique rx, emission electronique auger. On effectue des mesures de conductivite electrique, d'effet hall et de pouvoir thermoelectrique en fonction de la temperature, de la concentration initiale en halogene et du vieillissement. On en deduit que, seule une fraction d'halogene, non uniformement reparti, a un role electriquement actif

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Ashraf, Shakeel. "Evolution of IR Absorber for Integration in an IR Sensitive CO2 Detector." Thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-14088.

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The maximum sensitivity of a thermal IR sensor can be available either by means of the sensor material, having its own absorbing properties, or by the deposition of an additional absorber structure on the detector surface. In this thesis, the theory of two absorption structures is discussed. The first is called the interferometric absorber structure. The second structure under investigation uses a lead selenide layer for the IR absorption. In the interferometric structure, a new epoxy material SU8-2002 was used as a dielectric medium. This material has a very low thermal conductivity of 0.3 W/

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Dedigamuwa, Gayan S. "Fabrication and Characterization of Surfactant-Free PbSe Quantum Dot Films and PbSe-Polymer Hybrid Structures." Scholar Commons, 2010. https://scholarcommons.usf.edu/etd/1611.

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This work describes an experimental investigation of methods of synthesis, determination of structural and physical properties, and analysis and correlation of the properties to the structures of semiconductor quantum dots and quantum dot-polymer hybrid structures. These structures are investigated for applications in flexible solar cell devices. The main synthesis process used in the work was a Laser-Assisted Spray (LAS) process that was developed in our laboratory to deposit surfactant-free PbSe quantum dot (QD) films directly on a substrate. The QD films formed by this technique are in clos

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Korolkov, Ilia. "Propriétés photoélectriques de vitrocéramiques et cristaux de chalcogénures." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S145/document.

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La crise de l’énergie ainsi que les problèmes écologiques sont considérés comme les défis les plus importants de demain. Cependant, les sources d’énergies renouvelables et respectueuses de l’environnement ne sont pas suffisamment développées, ce qui entraîne une contribution faible à la production d’énergie. Les cellules solaires font partie des sources d’énergies renouvelables les plus attractives et prometteuses. Cependant, les panneaux solaires existants ont toujours un facteur de qualité négatif, c’est-à-dire que leur production et leur entretien demandent plus d’énergie qu’ils ne sont cap

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Colakoglu, Tahir. "The Effects Of Post-annealing Process On The Physical Properties Of Silver-indium-selenium Ternary Semiconductor Thin Films Deposited By Electron Beam Technique." Phd thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/2/12610974/index.pdf.

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Ternary chalcopyrite compounds are the semiconductors with suitable properties to be used as absorber materials in thin film solar cells. AgInSe2 is a promising candidate with its several advantages over the widely used CuInSe2. The purpose of this study was to optimize the physical properties of the Ag-In-Se (AIS) thin films that were deposited by e-beam evaporation of Ag3In5Se9 single crystal powder for solar cell applications by means of post-annealing process under nitrogen atmosphere. The as-grown AIS thin films were annealed at 200, 300 and 400oC and their structural, optical, electrical

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Jayadevan, Keshavanand. "Fabrication and Characterization of Novel 2SSS CIGS Thin Film Solar Cells for Large-Scale Manufacturing." Scholar Commons, 2011. http://scholarcommons.usf.edu/etd/3167.

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A novel 2SSS (2 Step Solid Selenization) CIGS (Cu, In, Ga, Se) thin film solar cell recipe was developed which can be a replacement to the conventional co-deposition process usually employed for large-scale manufacturing. The co-deposition procedure is faced with multiple problems such as selenium incorporation, effective gallium incorporation in the absorber. It is a 2-step proprietary procedure with better control over growth mechanisms and material utilization for the absorber layer for the CIGS thin film solar cells. It makes use of solid selenium source as preferred by manufacturers. Each

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Khatri, Himal. "New Deposition Process of Cu(In,Ga)Se₂ Thin Films for Solar Cell Applications." Connect to full text in OhioLINK ETD Center, 2009. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1259612259.

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Mohammadi, Farid. "A Meta-Analysis on Solar Cell Technologies." Thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-32584.

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The objective of this study is analysing the characteristics of five different solar cell technologies regarding their efficiency, fill factor, cost and environmental impacts and comparing their improvement records over years considering their efficiency. The five solar cell technologies of interest are amorphous silicon, monocrystalline silicon, polycrystalline silicon, cupper indium gallium selenide thin film and cadmium telluride thin film. The structure and manufacturing process of each of cell technologies were discussed. The study was conducted by the aid of available scientific reports

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Daher, Habib. "Contribution a l'etude du diagramme de phase ag-sn-se." Paris 6, 1987. http://www.theses.fr/1987PA066325.

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Rouxel, Yann. "Coévaporation avec masquage mécanique de ZnSe et de LaF3, pour la réalisation de couches minces à profils d'indice continus périodiques." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10096.

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Dans une etude theorique des structures a profil d'indice continu, il est montre que l'essentiel des proprietes spectrales des filtres a profil d'indice sinusoidal peut etre etudie de maniere analytique a partir de certaines proprietes de l'equation de mathieu. L'etude experimentale de ces structures a ete realisee a l'aide d'une technique de coevaporation par masquage mecanique. L'equipement de depot realisant la coevaporation a ete developpe pour permettre la realisation de couches sur substrat chaud pour des profils d'indice quelconques. Un systeme de mesure optique multispectral in-situ en

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Nouvelot, Luc. "Evaluation et réalisation de miroirs diélectriques à profil d'indice continu et périodique (filtres rugates)." Grenoble 1, 1993. http://www.theses.fr/1993GRE10069.

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Differentes methodes de calcul des proprietes optiques des couches minces optiques a profil d'indice continu sont presentees. Dans le cas des filtres rugates, l'utilisation de methodes analytiques a notamment permis un calcul des enveloppes des spectres ainsi que l'optimisation du profil d'indice. Un nouveau systeme de coevaporation sous vide a ete developpe pour realiser des filtres a profil d'indice continu. Des couches minces homogenes de zns, znse, mgf#2, ainsi que de zns-mgf#2 et de znfe-mgf#2 de differentes compositions ont ete realisees. Il apparait que le zns presente un probleme de co

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Aissaoui, Rached. "Contribution à l'étude des couches minces de l'alliage germanium-sélénium, avec une concentration de germanium inférieure à trente-trois pour cent : élaboration, relaxation, conduction." Rouen, 1986. http://www.theses.fr/1986ROUES046.

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Kessler, John. "Etude photoelectrochimique des alliages cuin::(1-x)ga::(x)se::(2) : relation entre les proprietesphotovoltaiques des couches minces de cugase::(2) et leur composition." Paris 7, 1988. http://www.theses.fr/1988PA077189.

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L'etude des echantillons massifs de cuin::(1-x)ga::(x)se::(2) de type p permet de mettre au point la solution electrolytique acide en presence du couple redix v**(2+/3+). Etude des positions energetiques des bandes par mesures capacitives. Etude de la variation de la bande interdite en fonction de x et mesure des longueurs de diffusion par l'evolution du photocourant en fonction du potentiel. Etude des proprietes optiques et electroniques des couches minces cugase::(2) de type p en fonction des ecarts a la stoechiometrie

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