Relevant bibliographies by topics / Transimpedance gain

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Transimpedance gain'

Author: Grafiati
Published: 3 June 2025
Last updated: 19 July 2025

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Journal articles on the topic "Transimpedance gain"

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Patil, Amita, Xiao An Fu, Mehran Mehregany, and Steven Garverick. "Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing." Materials Science Forum 645-648 (April 2010): 1107–10. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1107.

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Fully monolithic, transimpedance and differential voltage amplifiers are reported in this paper based on 6H-SiC, n-channel, depletion-mode JFETs. The single-stage transimpedance amplifier has a low-frequency gain of ~222 kΩ at room temperature, with ~2% gain matching for copies on a 6-mm x 6-mm die. The transimpedance gain is set by an integrated resistor and is ~1.1 MΩ at 450oC. The single-stage, differential voltage amplifier has a typical gain-bandwidth of ~2.8 MHz at 600oC and a typical open-loop voltage gain of ~35.8 dB at 25oC, with less than 1-dB gain variation from 25-600oC.
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Mahmod, Mastura binti, and Mohammad Faiz Liew Abdullah. "Transimpedance Amplifier Receiver with Variable Gain Amplifier." Journal of Applied Engineering & Technology (JAET) 3, no. 2 (2019): 29–37. http://dx.doi.org/10.55447/jaet.03.02.51.

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A ‘Transimpedance Amplifier Receiver with Variable Gain Amplifier’ has been designed to detect the gain and amplitude of the transmitted signal. Two different configurations of receivers had been designed using LMH6624 and LMH6642 as the front-end transimpedance amplifier. The output frequency response achieved by LMH6624 is 73.0 MHz to 85.9 MHz and LMH6642 is 59.9 MHz to 60.6 MHz.
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Masetti, Ettore, Stefano Cattini, and Luigi Rovati. "A transimpedance preamplifier using a feedforward approach for robust rejection of DC photogenerated currents." Review of Scientific Instruments 94, no. 1 (2023): 014705. http://dx.doi.org/10.1063/5.0130239.

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The preamplifier proposed in this paper is designed to extract weak variable photogenerated signals from a high-level continuous background ensuring low noise and high transimpedance gain. An efficient cancellation of the DC component directly at the photodetector output, exploiting a feedforward approach, allows us to properly amplify the variable signal components of interest avoiding saturation of the preamplifier. Furthermore, the large transimpedance gain allows for minimizing the effects of the noise introduced by the following stages on the signal processing chain. In the paper, we present the proposed approach and a possible circuit realization with a signal AC/DC ratio as small as 1/1000 ensuring low noise, high gain, and a considerable bandwidth. The realized preamplifier offers a Noise Equivalent Power NEP ≃ 1.12 nW, an in-band transimpedance gain of 4.4 MΩ, and a wide bandwidth from about 1 Hz up to 100 kHz, making it suitable for use in several applications both in biomedical and industrial fields.
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Roogi, Jyoti M., and Manju Devi. "Pre-current amplifier based transimpedance amplifier for biosensors." International Journal of Reconfigurable and Embedded Systems (IJRES) 11, no. 2 (2022): 188. http://dx.doi.org/10.11591/ijres.v11.i2.pp188-195.

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In this paper, we present current amplifier based transimpedance amplifier (TIA) for biosensor applications. Proposed design has low-noise, high Transimpedance gain that can be used for low current measurement applications. The current amplifier based TIA is implemented in order to resolve the fabrication issues related to high value feedback resistor. In this design, the input block to TIA is a low amplitude current amplifier. The designed amplifier is implemented in 90 nm complementary metal-oxide semiconductor (CMOS) technology. The design achieves transimpedance gain of 800 kΩ with a bandwidth of 5 kHz and input referred current noise is of 0.152 pA/√𝐻𝑍 for an input of 41 nA bypassed from current amplifier with input of 200 pA.
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Jyoti, M. Roogi, and Devi Manju. "Pre-current amplifier based transimpedance amplifier for biosensors." International Journal of Reconfigurable and Embedded Systems (IJRES) 11, no. 2 (2022): 188–95. https://doi.org/10.11591/ijres.v11.i2.pp188-195.

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In this paper, we present current amplifier based transimpedance amplifier (TIA) for biosensor applications. Proposed design has low-noise, high Transimpedance gain that can be used for low current measurement applications. The current amplifier based TIA is implemented in order to resolve the fabrication issues related to high value feedback resistor. In this design, the input block to TIA is a low amplitude current amplifier. The designed amplifier is implemented in 90 nm complementary metal-oxide semiconductor (CMOS) technology. The design achieves transimpedance gain of 800 kΩ with a bandwidth of 5 kHz and input referred current noise is of 0.152 pA/√𝐻𝑍 for an input of 41 nA bypassed from current amplifier with input of 200 pA.
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Pan, Xuan, Yang Wang, and Qing Liu. "A Rail-to-Rail Operational Amplifier for Transimpedance Optoelectronic Conversion." Journal of Nanoelectronics and Optoelectronics 19, no. 3 (2024): 335–41. http://dx.doi.org/10.1166/jno.2024.3557.

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The transimpedance conversion circuit is an important part of the fluorescent optical fiber temperature sensor, which is used for rare earth fluorescence detection. Transimpedance conversion circuits can benefit from the wide input range, high gain, low input offset voltage, and high common-mode rejection ratio of rail-to-rail operational amplifiers. In this paper, a constant transconductance rail-to-rail operational amplifier is designed and implemented based on the 0.18 μm CMOS process. According to the simulation results, the transconductance change rate of the operational amplifier is 4.8%, and its gain is 140 dB. The input offset voltage of this operational amplifier is 0.41 μV. Both the power supply rejection ratio and the common-mode rejection ratio have values above 140 dB, with the common-mode rejection ratio reaching as high as 165.4 dB. The transimpedance conversion circuit consists of the operational amplifier designed in this paper. The test results show that the operational amplifier has a certain application value in the transimpedance amplification circuit.
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Singh, Priya, Dr Vandana Niranjan, and Prof Ashwni Kumar. "A Comparative Study of CMOS Transimpedance Amplifier (TIA)." Indian Journal of VLSI Design 3, no. 1 (2023): 19–22. http://dx.doi.org/10.54105/ijvlsid.a1215.033123.

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In this paper a comparative study of different CMOS transimpedance amplifier has been presented. Standard device parameters of transimpedance amplifier such as gain, input refereed noise, power dissipation and group delay are studied and compared. Here the transimpedance amplifier is divided on the basis of its topology and device technology used and performance is summarized to get the overview. Most of the analysis taken are performed on 0.18 μm technology and some are implemented using 45nm, 0.13μm, 65nm, and 90nm.
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Kholili, M. J., M. Miyahara, M. Shoji, E. Kurniawan, J. A. Prakosa, and M. M. Tanaka. "A low-power and high-gain frontend for GHz application using trans-impedance amplifier for fast particle detection." Journal of Instrumentation 18, no. 11 (2023): P11010. http://dx.doi.org/10.1088/1748-0221/18/11/p11010.

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Abstract In this paper, we present a front-end for gigahertz applications, FGATI, which utilizes a transimpedance amplifier design to amplify the current signal from a diamond particle detector. The transimpedance amplifier design adopts a flipped-voltage-follower-based current-mirror (FVF-CM) topology as the input stage, offering advantages such as low power consumption, large transimpedance gain, gigahertz bandwidth, and reasonable noise levels. The FVF-CM topology was realized to improve noise reduction with a fully differential output configuration. The design was implemented as an ASIC chip using 65 nm CMOS silicon technology. The bandwidth measurement of the FGATI prototype demonstrated a 3-dB bandwidth of 1.2 GHz. Furthermore, the amplifier's power consumption is low, drawing only 7.2 mW/channel from a 1.2 V power supply, including the buffer stage. The measurement of the FGATI output signal indicated an excellent transimpedance gain of 79.2 dBΩ and a noise level of 6.7 mVrms. These findings highlight the feasibility and effectiveness of the proposed front-end design in high-frequency applications.
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Singh, Preeti, Maneesha Gupta, Bhawna Aggarwal, and Shireesh Kumar Rai. "Wideband High Gain Active Feedback Transimpedance Amplifier." Wireless Personal Communications 123, no. 3 (2021): 2721–36. http://dx.doi.org/10.1007/s11277-021-09262-w.

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Priya, Singh, Vandana Niranjan Dr., and Ashwni Kumar Prof. "A Comparative Study of CMOS Transimpedance Amplifier (TIA)." Indian Journal of VLSI Design (IJVLSID) 3, no. 1 (2023): 19–22. https://doi.org/10.54105/ijvlsid.A1215.033123.

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<strong>Abstract: </strong>In this paper a comparative study of different CMOS transimpedance amplifier has been presented. Standard device parameters of transimpedance amplifier such as gain, input refereed noise, power dissipation and group delay are studied and compared. Here the transimpedance amplifier is divided on the basis of its topology and device technology used and performance is summarized to get the overview. Most of the analysis taken are performed on 0.18 &mu;m technology and some are implemented using 45nm, 0.13&mu;m, 65nm, and 90nm.
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Dissertations / Theses on the topic "Transimpedance gain"

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Ozbas, Halil I. "High-Gain Transimpedance Amplifier With DC Photodiode Current Rejection." Link to electronic thesis, 2005. http://www.wpi.edu/Pubs/ETD/Available/etd-050505-105548/.

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Thesis (M.S.) -- Worcester Polytechnic Institute.<br>Keywords: high-gain; transimpedance; differential; dc rejection; dc photodiode current cancellation; automatic gain control; bilinear; automatic gain control; optical cohesion tomography. Includes bibliographical references (p. 90-92).
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Ruotsalainen, T. (Tarmo). "Integrated receiver channel circuits and structures for a pulsed time-of-flight laser radar." Doctoral thesis, University of Oulu, 1999. http://urn.fi/urn:isbn:9514252160.

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Abstract This thesis describes the development of integrated structures and circuit implementations for the receiver channel of portable pulsed time-of-flight laser rangefinders for industrial measurement applications where the measurement range is from ∼1 m to ∼100 m to noncooperative targets and the required measurement accuracy is from a few millimetres to a few centimetres. The receiver channel is used to convert the current pulse from a photodetector to a voltage pulse, amplify it, discriminate the timing point and produce an accurately timed logic-level pulse for a time-to-digital converter. Since the length of the laser pulse, typically 5 ns, is large compared to the required accuracy, a specific point in the pulses has to be discriminated. The amplitude of the input pulses varies widely as a function of measurement range and the reflectivity of the target, typically from 1 to 100 ... 1000, so that the gain of the amplifier channel needs to be controlled and the discrimination scheme should be insensitive to the amplitude variation of the input signal. Furthermore, the amplifier channel should have low noise in order to minimize timing jitter. Alternative circuit structures are discussed, the treatment concentrating on the preamplifier, gain control circuitry and timing discriminator, which are the key circuit blocks from the performance point of view. New circuit techniques and structures, such as a fully differential transimpedance preamplifier and a current mode gain control scheme, have been developed. Several circuit implementations for different applications are presented together with experimental results, one of them being a differential BiCMOS receiver channel with a bandwidth of 170 MHz, input referred noise of 6 pA/√Hz and maximum transimpedance of 260 kW. It has an accuracy of about +/- 7 mm (average of 10000 measurements), taking into account walk error with an input signal range of 1:624 and jitter (3s). The achievable performance level using integrated circuit technology is comparable or superior to that of the previously developed commercially available discrete component implementations, and the significantly reduced size and power consumption open up new application areas.
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Paro, Filho Pedro Emiliano. "A variable-gain transimpedance amplifier for MEMS-based oscillators = Um amplificador de transimpedância de ganho variável para aplicação em osciladores baseados em MEMS." [s.n.], 2012. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259292.

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Orientador: José Alexandre Diniz<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-20T16:11:38Z (GMT). No. of bitstreams: 1 ParoFilho_PedroEmiliano_M.pdf: 39204453 bytes, checksum: 8ea6c789b126029d1ff5b579bdd25102 (MD5) Previous issue date: 2012<br>Resumo: Um amplificador de transimpedância (TIA) de ganho variável é apresentado. Implementado em tecnologia 0,18 'mi'm, o projeto relatado possui a finalidade de prover um amplificador de sustentação para osciladores baseados em ressonadores do tipo MEMS (Micro-Electro-Mechanical System). Entre outros, as peculiaridades de projeto envolvem um desafiante compromisso entre Ganho, Largura de Banda, Ruído e Consumo de potência. Sendo assim, o amplificador foi implementado através do cascateamento de quatro estágios de ganho similares, lançando-se mão de realimentação do tipo shunt-shunt para diminuir as impedâncias de entrada e saída. Através do emprego de um estágio de ganho variável, uma alta faixa dinâmica de ganho é alcançada (53 dB), com um ganho máximo de transimpedância de 118 dB'ômega'...Observação: O resumo, na íntegra, poderá ser visualizado no texto completo da tese digital<br>Abstract: A variable gain Transimpedance Amplifier (TIA) is presented. Realized in 0.18 'mi'm technology, this amplifier was conceived with the purpose of providing oscillation sustaining for Micro-Electro-Mechanical System (MEMS) based oscillators. Facing a quite challenging trade-off between Gain, Bandwidth, Noise and Power consumption, the TIA was implemented through the cascade of four similar gain stages, with the application of shunt-shunt feedback to lower both input and output resistances. With the employment of a variable-gain stage, this TIA presents a large gain tunability of 53 dB, with a also large maximum transimpedance gain of 118 dB'omega'...Note: The complete abstract is available with the full electronic document<br>Mestrado<br>Eletrônica, Microeletrônica e Optoeletrônica<br>Mestre em Engenharia Elétrica
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Cobb, Derrick Ian. "Transimpedance-Based and Low-Power Bias Wireless PPB Hydrogen Gas Sensor." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1386074227.

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廖培勛. "The design of transimpedance amplifier with auto gain control for IrDA applications." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/98083156706898287164.

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碩士<br>國立清華大學<br>電子工程研究所<br>90<br>In this work, we design a pre-amplifier and a post-amplifier aiming at the requirements of wireless infrared communication system. The pre-amplifier is composed of a transimpedance amplifier that using C-peaking technology, low noise structure, and active feedback resistance to enhance input dynamic range, and linearity improvement. The pre-amplifier can meet the IrDA communication requirements. The gain is over 60dBΩ and the —3dB bandwidth is over 100MHz. A post-amplifier is added in the system to enlarge the input dynamic range. The feedback type auto-gain control (AGC) make the entire system much less sensitive to environment and process variation. Furthermore, it also reduces the low frequency noise. The output voltage signal swing is 1 volt peak-to-peak and the power consumption is about 22.34mW. The whole chip area is 1000 1000 um2, which is fabricated with TSMC 0.35um CMOS technology.
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Chang, Ming-Jen, and 張銘仁. "A CMOS OPTICAL RECEIVER FRONT-END WITH A VARIABLE-GAIN FULLY-DIFFERENTIAL TRANSIMPEDANCE AMPLIFIER." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/58040074292166524485.

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碩士<br>國立雲林科技大學<br>電子與資訊工程研究所<br>97<br>A CMOS optical receiver front-end is described. A stable variable-gain fully-differential transimpedance feedback amplifier is designed employing a current-mode amplifier as the feedforward gain element. For a more than triple variation of the transimpedance gain, from 0.3kΩ to 1kΩ, the variable-gain transimpedance amplifier achieves desirable gain-bandwidth independence. For an optical receiver front-end employing the transimpedance amplifier, the optical preamplifier achieves a transimpedance gain of 120dBΩ and a bandwidth of 105MHz with a 5pF photodiode capacitance, and a power consumption of 25mW. A prototype has been successfully implemented in a 0.35μm CMOS and its measurement results are included.
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Hung, Chih-Yuan, and 洪志源. "Design and Implementation of a CMOS Variable-Gain Fully-Differential Transimpedance Amplifier for Infrared Communications." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/66582990550443597975.

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碩士<br>國立雲林科技大學<br>電子與資訊工程研究所<br>93<br>A stable variable-gain fully-differential transimpedance feedback amplifier is designed employing a current-mode amplifier as the feedforward gain element. The current-mode amplifier exhibits a low input resistance and a high output resistance. The 3-dB bandwidths of the variable-gain transimpedance amplifier are relatively constant. Our study shows that the transimpedance amplifier is suitable for infrared wireless data communications.
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Carvalho, João Pedro Leal Abalada De Matos. "Design of a Transimpedance Amplifier for an Optical Receiver." Master's thesis, 2017. http://hdl.handle.net/10362/34375.

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In today’s world, technology is so developed that it is possible to transmit huge amounts of data in a short time. In the experiments with high energy levels in laboratories carried out in CERN, it is essential to have a method capable of carrying all this information and at the same time of being tolerant to the radiation from these same experiments. Optical fibres are currently the best method transmitting the data created by these experiments. In order to receive the information from the optical fibre a Photodiode (PD) is used to produce current from the light of the optical fibre. This current is however small. It is necessary to use an amplifier which, in addition to amplifying the current coming from the photodiode, also converts it into a voltage for the next phases of the optical receiver. These amplifiers are known as transimpedance amplifiers and are the critical part of optical receivers since an high gain is required to amplify the current from the photodiode and at the same time a high bandwidth to receive the hight data rate signals. This thesis presents a complete analysis of these amplifiers, showing various types of topologies and their pros and cons. In order to arrive at the amplifier with the desired characteristics, this thesis uses mathematical equations that allow us to describe the operation of the Transimpedance Amplifier (TIA) and to determine the optimal range between the gain, the bandwidth and the noise of the amplifier (input referred noise). All the theoretical expressions as well as the behaviour of the whole system was verified using electrical simulations.
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Book chapters on the topic "Transimpedance gain"

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P. Joshi, B., T. P. Mahajan, and D. C. Gharpure. "Stability Analysis of Transimpedance Amplifier for Capacitive Sensor Applications." In New Frontiers in Communication and Intelligent Systems. Soft Computing Research Society, 2021. http://dx.doi.org/10.52458/978-81-95502-00-4-10.

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The aim of this study is to analyze transimpedance amplifier with a feedback network (TIA-Fn) for measuring unknown capacitance value. Mathematical analysis along with electronic circuit simulation results are presented. The selection criterion of feedback components (Cf and Rf) is discussed. The circuit is capable of measuring unknown capacitance in the range of 1pF to 10pF which is useful in many applications such as thickness measurement, Electrical Capacitance Tomography, Moisture measurement to name a few. Frequency domain analysis has been carried out for gain and stability parameters of the proposed circuit with AD LT spice simulation software. While simulating, non-ideal components are taken in to consideration. Mathematical and simulation results are mutually related. The designed amplifiers suitable for connecting the unknown capacitance terminal with AC excitation.
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Conference papers on the topic "Transimpedance gain"

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Huang, Huazi, Hua Chen, Mou Liu, and Zhen Meng. "A High-Gain Wideband Transimpedance Amplifier with Adaptive Phase Compensation." In 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2024. https://doi.org/10.1109/rfit60557.2024.10812425.

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Wang, Jiacheng, Jiaxuan Zou, and Zhanfeng Wang. "Design of a transimpedance amplifier with high gain and low noise." In 2025 International Conference on Power Electronics Technology and Grid Systems (PETGS 2025), edited by Wei Lai. SPIE, 2025. https://doi.org/10.1117/12.3067952.

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Khakneshin, Soheila, Mehdi Saberi, and Alexandre Schmid. "A High-Gain Transimpedance Amplifier Using Highly-Linear and Symmetric Multi-Stage Pseudo-Resistors." In 2024 21st International SoC Design Conference (ISOCC). IEEE, 2024. http://dx.doi.org/10.1109/isocc62682.2024.10762284.

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Hüssen, Lukas, Xun Chen, Muh-Dey Wei, et al. "A DC to 5.8 GHz CMOS Variable-Gain Transimpedance Amplifier for Photonic Neuromorphic Hardware." In 2024 13th International Conference on Modern Circuits and Systems Technologies (MOCAST). IEEE, 2024. http://dx.doi.org/10.1109/mocast61810.2024.10615373.

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Wissing, Aaron, James Dalton, Viviana Arrunategui Norvick, et al. "A 100 Gbps, sub-pJ/bit Transimpedance Amplifier in 90-nm SiGe in a Reconfigurable IMDD/Coherent Optical Receiver." In Optical Fiber Communication Conference. Optica Publishing Group, 2025. https://doi.org/10.1364/ofc.2025.m2h.3.

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We report a 0.91 pJ/bit, differential dual-channel TIA with variable gain reaching 64 dBΩ in 90-nm SiGe measured in a reconfigurable PAM4/QPSK O-band receiver at 53.125 Gbaud with BERs below the KP4-FEC threshold of 2.2e-4.
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Sergeenko, Marsel, Vladislav Chumakov, and Nikolay Prokopenko. "Structure-Logic Circuits of Self-Compensation Sub-Circuits of CMOS Transistor’s (Si-SOI, GaN, GaAs, SiC) Parasitic Capacitances in High-Impedance Unit of High-Temperature Transimpedance and Operational Amplifiers." In 2024 International Conference on Actual Problems of Electron Devices Engineering (APEDE). IEEE, 2024. http://dx.doi.org/10.1109/apede59883.2024.10715887.

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Monsurro, Pietro, Alessandro Trifiletti, and Trond Ytterdal. "A novel transimpedance amplifier with variable gain." In 2010 NORCHIP. IEEE, 2010. http://dx.doi.org/10.1109/norchip.2010.5669441.

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Mishra, Pragati, and Vandana Niranjan. "Gain and Bandwidth Boosting of Transimpedance Amplifier." In 2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT). IEEE, 2018. http://dx.doi.org/10.1109/rteict42901.2018.9012619.

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Atef, Mohamed. "High gain transimpedance amplifier with current mirror load." In 2014 21st International Conference "Mixed Design of Integrated Circuits & Systems" (MIXDES). IEEE, 2014. http://dx.doi.org/10.1109/mixdes.2014.6872189.

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Kumar, Ravi Ranjan, Supriya Sharma, Kulbhushan Sharma, and Avinash Sharma. "Design of Low-Power High-Gain Transimpedance Amplifier." In 2023 5th International Conference on Smart Systems and Inventive Technology (ICSSIT). IEEE, 2023. http://dx.doi.org/10.1109/icssit55814.2023.10060885.

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