Academic literature on the topic 'Transistor à base de nanotube de carbone (CNTFET)'

Afin de permettre de développer un modèle de mémoire non-volatile basée sur le transistor à nanotube de carbone à commande optique qui est utilisée dans des circuits électroniques neuromorphiques, il est nécessaire de comprendre les physiques électroniques et optoélectroniques des nanotubes de carbone, en particulier l'origine de l'effet mémoire que présente ces transistors. C'est dans ce contexte général que cette thèse s'intègre. Le travail est mené sur trois plans : * Caractériser électriquement et optoélectroniquement des structures de test des CNTFETs et des OG-CNTFETs. * Développer un modèle compact pour les contacts Schottky dans les transistors à nanotube de carbone de la façon auto-cohérente basé sur le diamètre et la nature du métal d'électrode en utilisant la méthode de la barrière effective avec les paramètres nécessaires calibrés. * Modéliser l'OG-CNTFET selon les régimes de fonctionnement, lecture, écriture, effacement ou programmation pour application à une mémoire non-volatile en intégrant le mécanisme de piégeage et dépiégeage à l'interface polymère/oxyde.

Afin de permettre de développer un modèle de mémoire non-volatile basée sur le transistor à nanotube de carbone à commande optique qui est utilisée dans des circuits électroniques neuromorphiques, il est nécessaire de comprendre les physiques électroniques et optoélectroniques des nanotubes de carbone, en particulier l’origine de l'effet mémoire que présente ces transistors. C’est dans ce contexte général que cette thèse s'intègre. Le travail est mené sur trois plans :• Caractériser électriquement et optoélectroniquement des structures de test des CNTFETs et des OG-CNTFETs.• Développer un modèle compact pour les contacts Schottky dans les transistors à nanotube de carbone de la façon auto-cohérente basé sur le diamètre et la nature du métal d’électrode en utilisant la méthode de la barrière effective avec les paramètres nécessaires calibrés.• Modéliser l'OG-CNTFET selon les régimes de fonctionnement, lecture, écriture, effacement ou programmation pour application à une mémoire non-volatile en intégrant le mécanisme de piégeage et dépiégeage à l’interface polymère/oxyde<br>This PhD thesis presents a computationally efficient physics-based compact model for optically-gated carbon nanotube field effect transistors (OG-CNTFETs), especially in the non-volatile memory application. This model includes memory operations such as “read”, “write”, “erase” or “program”, and “reset” which are modeled using trapping and detrapping mechanisms at the polymer/oxide interface. The relaxation of the memory state is taken into account. Furthermore, the self-consistent modeling of Schottky barriers at contacts between the carbon nanotube channel and metal electrodes is integrated in this model applying the effective Schottky barrier method. The Schottky contact model can be included in CNTFET based devices for a typical biasing range of carbon nanotube transistors. This compact model is validated by the good agreement between simulation results and experimental data (I-V characteristics). In the non-volatile memory application, this model can fully reproduce device behaviors in transient simulations. A prediction study of the key technological parameter, the CNT diameter variety is established to expect its impact on the transistor performance, and more importantly, on the memory operation. In the other hand, this thesis presents a preliminary electric characterization (I-V) of CNTFETs and OG-CNTFETs for the device modeling database. A preliminary optoelectronic characterization method is proposed

Orientadores: Peter Jürgen Tatsch, José Alexandre Diniz<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-21T00:22:30Z (GMT). No. of bitstreams: 1 Souza_JairFernandesde_D.pdf: 13128989 bytes, checksum: 25325c1093f208d379ae77adc08c90ff (MD5) Previous issue date: 2012<br>Resumo: Este trabalho teve como objetivo o desenvolvimento de materiais e métodos avançados de fabricação de sensores químicos/bioquímicos. Utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da UNICAMP, foram desenvolvidos e caracterizados filmes finos de alta constante dielétrica e filmes metálicos. Os materiais desenvolvidos foram empregados na fabricação de sensores baseados em transistores de efeito de campo sensíveis a íons (ISFET) e em dispositivos de efeito de campo que incorporam nanoestruturas de carbono como elemento funcional [grafeno (GraFET) e nanotubos de carbono (CNTFET)]. A aplicação dos materiais como camada sensível, dielétrico de porta e eletrodos, assim como a utilização de nanoestruturas, tem por objetivo aumentar a sensibilidade e a biocompatibilidade dos dispositivos, construir dispositivos robustos que possam ser empregados em ambientes agressivos e obter sensores com resposta linear e estável com o tempo e temperatura. Foram fabricados, caracterizados e encapsulados ISFET's com camada sensível constituída por filmes finos de nitreto de silício (SiNx)/nitreto de alumínio (AlN) e com eletrodos formados por filmes metálicos de alumínio. Filmes finos de óxido de titânio (TiOx) e óxido de tântalo (TaOx), cujas características são de interesse para aplicação como filme sensível em determinadas aplicações, também foram estudados. Os filmes foram obtidos pelas técnicas de deposição química em fase vapor (LPCVD), sputtering dc e oxidação térmica rápida (RTO). Foram desenvolvidas técnicas de fabricação de dispositivos de efeito de campo baseados em grafeno e nanotubos de carbono, utilizando como dielétrico de porta os filmes finos desenvolvidos para formar a camada sensível dos ISFET's. Entretanto, os eletrodos foram construídos empregando-se filmes finos de nitreto de tântalo (TaN) depositados por sputtering dc. Filmes sensíveis de SiNx são quimicamente estáveis e tornam os sensores robustos com sensibilidade em tensão próxima ao limite de Nernst (59 mV/pH). Entretanto, a grande sensibilidade em tensão obtida (50 mV/pH) não é transformada em alta sensibilidade em corrente (1,35 ?A/pH), devido ao baixo valor de transcondutância observado (19 ?S). Por outro lado, quando se utiliza AlN depositado a temperatura ambiente, tem-se um baixo valor de sensibilidade em tensão (20 mV/pH) que é transformado em uma alta sensibilidade em corrente (28 ?A/pH), em razão da alta transcondutância dos dispositivos (329 ?S). GraFET's e CNTFET's demonstraram a modulação da corrente entre os eletrodos de fonte e dreno pela ação do campo elétrico perpendicular, aplicado com o auxílio do eletrodo de porta. Entretanto, o efeito de campo observado é ambipolar, ou seja, existem dois regimes possíveis de operação dos dispositivos, um regime dominado pelo transporte de lacunas e outro dominado pelo transporte de elétrons. A característica ambipolar possibilita a detecção de moléculas carregadas positiva e negativamente, enquanto que o baixo coeficiente de temperatura do filme de TaN possibilita a utilização dos dispositivos em processos realizados em altas temperaturas<br>Abstract: The main aim of this work is the development of advanced materials and methods for the fabrication of chemical/biochemical sensors. By using equipments available in the Center of Semiconductor Components of UNICAMP, high dielectric constant thin films and metallic films have been developed and characterized. The materials developed were employed in the fabrication of sensors based on ion-sensitive field effect transistors (ISFET) and in field-effect devices incorporating carbon nanostructures as functional elements [Graphene (GraFET) and carbon nanotubes (CNTFET)]. The application of these materials as sensitive layer, gate dielectric and electrodes, as well as the use of nanostructures, aims to increase the sensitivity and biocompatibility of the devices, to build robust devices that can be used in harsh environments and obtain sensors with linear and stable response over time and temperature. ISFET's with sensitive layer consisting of thin films of silicon nitride (SiNx)/aluminum nitride (AlN) and with electrodes formed by aluminum metallic films were fabricated, characterized and packaged. Thin films of titanium oxide (TiOx) and tantalum oxide (TaOx), whose characteristics are interesting in certain applications, were also studied. The films were obtained by chemical deposition techniques in vapor phase (LPCVD), dc sputtering and rapid thermal oxidation (RTO). Techniques have been developed for manufacturing field effect devices based on graphene and carbon nanotubes, the thin films developed to form the ISFET's sensitive layer were used as gate dielectric. However, the electrodes were built by using thin film of tantalum nitride (TaN) deposited by dc sputtering. SiNx sensitive films are chemically stable and make sensors robust with sensitivity in voltage near to the Nernst limit (59 mV/pH). However, the great sensitivity in voltage (50 mV/pH) is not transformed into high current sensitivity (1.35 ?A/pH), due to the low value of transconductance (19 ?S). On the other hand, when AlN deposited at room temperature is used, a low voltage sensitivity value is obtained (20 mV/pH) that is transformed into a high sensitivity in current (28 ?A/pH), due to high transconductance of the devices (329 ?S). GraFETs and CNTFETs demonstrated the current modulation between the source and drain electrodes by the action of perpendicular electric field, applied with the aid of the gate electrode. However, the field effect observed is ambipolar, in other words, there are two possible operation regime, a regime dominated by the transport of holes and another dominated by transport of electrons. The ambipolar feature enables the detection of positively and negatively charged molecules, while the low temperature coefficient of TaN film allows the use of devices in processes carried out at high temperatures<br>Doutorado<br>Eletrônica, Microeletrônica e Optoeletrônica<br>Doutor em Engenharia Elétrica

Microorganisms are present in a variety of sources, including food, water, animals, environment as well as the human body. They can be harmless or harmful. The latter is also called pathogenic and their detection is extremely important due to health and safety reasons. <br/> <br/>It is well known that food contaminated with bacteria can produce a number of foodborne diseases. As a consequence, thousands of euros are invested each year in medical treatments trying to keep the population healthy. There are more than 250 known foodborne diseases. For example, outbreaks of salmonellosis have increased in many countries in the last decades being Salmonella Infantis one of the most important etiological agents associated with this enteric disease. Moreover, due to the wide distribution of the microorganisms, they can also contaminate foods in the field as well as during the storage stage. In that sense, filamentous fungi are one of the etiological agents responsible for most post-harvest food spoilage producing quality losses and economic devaluation. <br/> <br/>On the other hand, the invasive fungal infections due to yeast have risen considerably in recent years. Candidiasis is the so-called disease produced by Candida albicans. This is an opportunistic infection that affects immunocompromised patients requiring costly treatment with advanced medicine. <br/> <br/>Several methods have been proposed so far to detect pathogenic microorganisms. Conventional culture is highly selective and sensitive but they also require several days to yield the results. To simplify and automate the identification of both bacteria and fungi rapid biochemical kits have been developed. Although the results obtained with these kits are comparable to the traditional biochemical tests they also need 1 or 2 days to obtain results. Enzyme-linked immunosorbent assays (ELISA) can be applied for the direct identification of pathogenic microorganisms in real samples. This immuno-based method has been widely used in both food and the medical sector with high sensitivity. Nevertheless, the main disadvantage of this method is that it can also be time-consuming because a pre-enrichment of the sample is often required in order to achieve low limits of detection. As a consequence, many researchers have addressed their efforts towards the development of alternative methods to allow the rapid detection of pathogens. <br/> <br/>Molecular biology-based methods, specifically polymerase chain reaction (PCR) and real-time PCR are nowadays the most common tools used for pathogen detection. They are highly sensitive and allow the quantification of the target. In addition, microarray platforms of DNA have been developed in order to analyse hundreds of targets simultaneously. However, this technique is costly and reagent-consuming. <br/> <br/>The introduction of biosensors has brought new alternatives in pathogenic detection. Biosensors are the most used tools in pathogenic detection after PCR, culture methods and ELISA. They provide rapid results after the sample has been taken. However, their real application lies in achieving selectivities and sensitivities comparable to the established methods and at low cost. <br/> <br/>Since carbon nanotubes (CNTs) were discovered by Iijima, many papers have reported their unique electronic and optical properties which, together with their size, make these nanostructures interesting materials in the development of biosensing platforms. Their very high capacity for charge transfer between heterogeneous phases makes them suitable as components in electrochemical sensors. The electrical conductivity of the CNTs is highly sensitive to changes in their chemical environment and, as a result, they have been successfully applied in the study of molecular recognition processes. <br/> <br/>An approach for the direct electrical detection of biomolecules integrates CNTs as transducer elements within a field-effect transistor (FET) configuration. The main advantages of this kind of configuration lies in that the conducting channel is usually located on the surface of the substrate and as a result, they are extremely sensitive to any change in the surrounding environment. Moreover, CNTFET devices can operate at room temperature and in ambient conditions. <br/> At the beginning of this research (2006) electrochemical CNTFETs based on single walled carbon nanotubes had not been applied to detect bacteria or fungi. Only the interaction between CNTs and bacteria had been explored, but without sensing purposes. Therefore, this thesis reports the first CNTFET devices applied to the detection of pathogenic microorganisms. First, the background and the introduction containing the state of the art are presented covering relevant investigations made in the last years. Next, the main analytical methods are described. These descriptions involve detailed information of all procedures, analytical tools and materials used throughout this research work. <br/> <br/>In the following chapters, the application of the CNTFETs for the determination of bacteria, yeast and moulds is presented throughout the scientific articles published along the development of the thesis. Briefly, the first device developed was applied to the detection of Salmonella Infantis in a simple matrix (0.85 % saline solution) and it was proven for first time, that this kind of sensor was able to detect, at least, 100 cfu/mL of the bacteria in just one hour with high selectivity. Subsequently, we enlarged the application field to other types of microorganisms: Candida albicans. In this study we improved not only the detection limit of the devices to 50 cfu/mL but also we proved the selectivity of the CNTFETs against possible interference that can be present in real samples like serum proteins. Finally, the devices were applied to the detection of the mould Aspegillus flavus in real samples. In this assay the response time was 30 minutes and a high sensitivity (10 µg of A. flavus / 25 g of rice) was obtained. <br/> <br/>As the final chapters, general conclusions extracted from the overall work and annexes are reported. It can be stated that nanomaterials displaying extraordinary properties like carbon nanotubes can be combined with biological entities to obtain highly sensitive and selective biosensors able to detect bacteria, yeasts and moulds in a very short time. In future work, other performance parameters such as, long term stability, robustness and reusability must be studied further and contrasted with standard methods before thinking of the commercialization of the devices.<br>Los microorganismos están presentes en una gran variedad de orígenes, incluyendo alimentos, agua, animales, medio ambiente también como en el propio cuerpo humano. Estos pueden ser beneficiosos o perjudiciales. Los microorganismos perjudiciales reciben el nombre de patógenos y su detección es de gran importancia por razones de salud y seguridad. <br/> <br/>Es bien conocido que los alimentos contaminados con bacterias pueden producir cierto número de enfermedades. Como consecuencia de esto, miles de euros se invierten cada año en tratamientos médicos para mantener la salud de la población. Existen más de 250 enfermedades transmitidas por alimentos. En las últimas décadas se ha incrementado por ejemplo, la incidencia de brotes de salmonelosis en muchos países, siendo Salmonella Infantis uno de los agentes etiológicos más importantes asociados con la producción de esta enfermedad entérica. Debido a la amplia distribución de los microorganismos, estos pueden llegar también a contaminar alimentos durante su cultivo como durante la fase de almacenamiento. En este sentido, los hongos filamentosos son en gran parte los agentes etiológicos responsables del deterioro de alimentos después de la cosecha produciendo pérdidas en la calidad y devaluación económica. <br/> <br/>Por otra parte, las infecciones fúngicas invasivas producidas por levaduras han aumentado considerablemente en los últimos años. Candidiasis, es la enfermedad producida por Candida albicans. Esta es una de las infecciones más comunes que afectan pacientes inmunocomprometidos requiriendo tratamientos de elevado coste. <br/> <br/>Se han propuesto varios métodos hasta la fecha para la detección de microorganismos patógenos. El cultivo es el método de referencia utilizado para la detección y cuantificación de bacterias. Tiene la ventaja de ser altamente selectivo y sensible pero tiene el inconveniente de requerir varios días para obtener un resultado. Para simplificar y automatizar la identificación de bacterias y hongos se han desarrollado kits bioquímicos rápidos. Aunque los resultados obtenidos usando esta clase de kits son comparables a las pruebas bioquímicas tradicionales, también 1 o 2 días son requeridos para la obtención de resultados. El enzimoinmunoensayo ("Enzyme Linked Immunosorbent Assay", ELISA) es un método immunológico de gran sensibilidad que se utiliza ampliamente para detectar y cuantificar microorganismos patógenos, tanto en el sector médico como en el alimentario. Sin embargo, su principal desventaja es que a veces el tiempo de análisis puede aumentar considerablemente, específicamente cuando se realizan etapas de pre-enriquecimiento de la muestra para disminuir el límite de detección. Como consecuencia, muchos investigadores han dirigido sus esfuerzos hacia el desarrollo de métodos más rápidos. <br/> <br/>Los métodos basados en el uso de la biología molecular, específicamente la reacción en cadena de la polimerasa (PCR) y la PCR en tiempo real, son hoy en día las herramientas más comúnmente usadas para la detección de patógenos. Estas técnicas son altamente sensibles y permiten la cuantificación del patógeno. Adicionalmente, se han desarrollado chips con plataformas de DNA para analizar cientos de patógenos simultáneamente. Sin embargo, esta técnica es costosa y requiere el uso de muchos reactivos. <br/> <br/>La introducción de los biosensores ha contribuído a generar nuevas alternativas para la detección de patógenos. Los biosensores son las herramientas más usadas en la detección de patógenos después de la PCR, los métodos convencionales y el ELISA. Tienen la ventaja de proporcionar respuestas rápidas entre la toma de muestra y la obtención de los resultados. No obstante, el reto para su aplicación en muestras reales radica en alcanzar selectividades y sensibilidades comparables a los métodos convencionales ya establecidos y a un costo económico reducido. <br/> <br/>Desde que Iijima descubrió los nanotubos de carbono (CNTs) se han publicado numerosos trabajos sobre sus excelentes propiedades electrónicas y ópticas, las cuales, en conjunción con su tamaño, hacen de estas nanoestructuras materiales interesantes en el desarrollo de plataformas de biodetección. Los CNTs presentan una gran capacidad de transferencia de carga entre estructuras heterogéneas. Ello les confiere una gran utilidad en la elaboración de sensores de tipo electroquímico. Su conductividad eléctrica varía de forma muy acusada con cambios en su ambiente químico y, como resultado, se han aplicado con éxito en el estudio de procesos de reconocimiento molecular. <br/> <br/>Una metodología para la detección directa de biomoléculas integra los CNTs como elementos transductores dentro de una configuración de transistor de efecto campo (FET). Las principales ventajas de esta clase de configuraciones radican en que el canal conductor se localiza sobre la superficie del substrato y, como resultado, es altamente sensible a cualquier cambio en el medio ambiente. Además, los CNTFETs pueden operar a temperatura y, humedad ambientales. <br/> <br/>Al inicio de esta tesis (2006), todavía no se habían aplicado los CNTFETs basados en nanotubos de carbono monocapa a la detección de bacterias y hongos. Sólo se había estudiado la interacción entre los CNTs y bacterias, pero sin el objetivo de detección. Por tanto, esta tesis aporta los primeros CNTFETs aplicados a la detección de microorganismos patógenos. En primer lugar, se presentan los antecedentes y la introducción, donde se realiza una revisión crítica y actualizada de los métodos e investigaciones más relevantes para detectar microorganismos patógenos. Posteriormente, se incluye un capítulo con la información detallada de todos los procedimientos experimentales, herramientas analíticas y materiales utilizados a lo largo del trabajo de investigación. <br/> <br/>En los siguientes capítulos, se presenta la aplicación de CNTFETs en la determinación de bacterias, mohos y levaduras mediante artículos científicos publicados a lo largo del desarrollo de la tesis. Brevemente, el primer dispositivo desarrollado se aplicó a la detección de Salmonella Infantis en una matriz simple (solución salina 0.85 %) y se comprobó por primera vez que esta clase de sensores eran capaces de detectar al menos 100 ufc/mL de la bacteria en tan solo una hora con alta selectividad. Seguidamente, se amplió el campo de aplicación a otro tipo de microorganismo, Candida albicans. En este estudio, se mejoró no sólo el límite de detección de los dispositivos a 50 ufc/mL sino que también se mejoró la selectividad de los CNTFETs frente a posibles interferentes que pueden estar presentes en muestras reales, tales como proteínas séricas. Finalmente, se aplicaron los dispositivos a la detección del moho Aspergillus flavus en muestras reales. En este ensayo, el tiempo de respuesta fue de 30 minutos y se obtuvo una buena sensiblidad (10 µg de A. flavus / 25 g de arroz). <br/><br/><br/><br/>Como parte final de la tesis, se presentan las conclusiones generales extraídas a lo largo del trabajo completo junto con los anexos. Puede concluirse que, gracias a las propiedades únicas de los nanotubos de carbono, dichos nanomateriales pueden combinarse con entidades biológicas (como los anticuerpos) para obtener biosensores altamente sensibles y selectivos capaces de detectar bacterias, levaduras y mohos en un tiempo de análisis muy reducido. Como trabajo futuro, se deberán estudiar otros parámetros de calidad de los dispositivos tales como la estabilidad a lo largo del tiempo, la robustez o su reutilización con el fin de contrastarlos con los métodos estándar antes de poder iniciar la comercialización de este tipo de sensores.

Pour continuer la course à la miniaturisation des composants microélectronique, les nanotubes de carbone (NTC) se présentent comme une alternative potentielle au Silicium en tant que canal de conduction dans les transistors à effet de champ (CNTFET). Afin de comprendre le fonctionnement du CNTFET, ce travail présente un ensemble de simulations physiques de type Monte-Carlo permettant une description fine du transport de charges. Ce travail est basé sur le simulateur particulaire MONACO qui a été adapté aux propriétés spécifiques des NTC. Il commence par une étude détaillée du transport électronique dans les NTC semi-conducteurs mono-feuillet. L’importance des différents mécanismes d’interaction électron-phonon et leur impact sur les propriétés de transport sont plus particulièrement analysés. Les libres parcours moyens obtenus sont dépendants du champ électrique : suivant les phonons dominants: ils sont supérieurs à 100 nm à faible champ et inférieurs à 20 nm à fort champ. La simulation d’un CNTFET à grille cylindrique et à contacts ohmiques est ensuite proposée en vu de dimensionner le transistor pour des applications numériques et analogiques. L’influence du contrôle électrostatique, du transport balistique et de la capacité quantique sur le fonctionnement et les performances du transistor est analysée et validée par des travaux expérimentaux. Enfin, les performances dynamiques du transistor à nanotube sont évaluées à partir de facteurs de mérite pertinents définis, d’une part, pour des applications numériques et, d’autre part, pour des applications analogiques haute fréquence pour lesquelles des valeurs de fréquence de transition supérieures au THz sont obtenues<br>To extend the scaling of microelectronics devices, carbon nanotubes (CNT) are considered as one of the most promising alternative material to Silicon. Here we propose a study of Carbon Nanotube Field-Effect Transistor (CNTFET) based on the particle Monte Carlo technique which gives a good description of charge transport taking into account electron-phonon scattering mechanisms. For this work, the Monte Carlo simulator MONACO has been extended to take into account CNT material properties. We begin with a detailed study of intrinsic charge transport in semiconducting single-wall CNT. In particular, we point out the importance and the impact of electron-phonon scattering on transport properties and performance. We obtain electron mean-free paths strongly dependent on electric field: according to the dominant phonon mode, the mean free-path is higher than 100 nm at low field and smaller than 20 nm at high field. Next, we study a coaxially gated CNTFET with electrostatically doped source and drain extensions in order to give the key parameters governing the performances for logic and analog applications. The influence of electrostatic control by the gate, of ballistic transport and quantum capacitance limit in this low dimensional system is analysed and the results are validated by experimental works. Finally, an evaluation of CNTFET dynamic performance, based on relevant key metrics, is proposed for logic and high frequency applications. In particular, intrinsic gain cut off frequency higher than one terahertz is obtained for 100 nm long gate length

This thesis investigates the fabrication and integration of nanoscale field-effect transistors based on individual semiconducting carbon nanotubes. Such devices hold great potential for integrated circuits with large integration densities that can be manufactured on glass or flexible plastic substrates. A process to fabricate arrays of individually addressable carbon-nanotube transistors has been developed, and the electrical characteristics of a large number of transistors has been measured and analyzed. A low-temperature-processed gate dielectric with a thickness of about 6 nm has been developed that allows the transistors and circuits to operate with voltages of about 1.5 V. The transistors show excellent electrical properties, including a large transconductance (up to 10 µS), a large On/Off ratio (&gt;10^4), a steep subthreshold swing (65 mV/decade), and negligible leakage currents (~10^-13 A). For the realization of unipolar logic circuits, monolithically integrated load resistors based on high-resistance metallic carbon nanotubes or vacuum-evaporated carbon films have been developed and analyzed by four-probe and transmission line measurements. A variety of combinational logic circuits, such as inverters, NAND gates and NOR gates, as well as a sequential logic circuit based on carbon-nanotube transistors and monolithically integrated resistors have been fabricated on glass substrates and their static and dynamic characteristics have been measured. Optimized inverters operate with frequencies as high as 2 MHz and switching delay time constants as short as 12 ns<br>Thema dieser Arbeit ist die Herstellung und Integration von Feldeffekt-Transistoren auf der Grundlage einzelner halbleitender Kohlenstoffnanoröhren. Solche Bauelemente sind zum Beispiel für die Realisierung integrierter Schaltungen mit hoher Integrationsdichte auf Glassubstraten oder auf flexiblen Kunststofffolien von Interesse. Zunächst wurde ein Herstellungsverfahren für die Anfertigung einer großen Anzahl solcher Transistoren auf Glas- oder Kunststoffsubstraten entwickelt, und deren elektrische Eigenschaften wurden gemessen und ausgewertet. Das Gate-Dielektrikum dieser Transistoren hat eine Schichtdicke von etwa 6 nm, so das die Versorgungsspannungen bei etwa 1.5 V liegen. Die Transistoren haben sehr gute elektrische Parameter, z.B. einen großen Durchgangsleitwert (bis zu 10 µS), ein großes Modulationsverhältnis (&gt;10^4), einen steilen Unterschwellanstieg (65 mV/Dekade) und vernachlässigbar kleine Leckströme (~10^-13 A). Für die Realisierung unipolarer Logikschaltungen wurden monolithisch integrierte Lastwiderstände auf der Grundlage metallischer Kohlenstoffnanoröhren mit großem Widerstand oder mittels Vakuumabscheidung erzeugter Kohlenstoffschichten entwickelt und u. a. mittels Vierpunkt- und Transferlängen-Messungen analysiert. Eine Reihe kombinatorischer Schaltungen, z.B. Inverter, NAND-Gatter und NOR-Gatter, sowie eine sequentielle Logikschaltung wurden auf Glassubstraten hergestellt, und deren statische und dynamische Parameter wurden gemessen. Optimierte Inverter arbeiten bei Frequenzen von bis zu 2 MHz und haben Signalverzögerungen von lediglich 12 ns

Parmi les nouveaux nano-dispositifs, les CNTFETs sont des candidats prometteurs. Mais les circuits à base de nanotubes auront une probabilité élevée de défectuosité lors de la fabrication et une assez grande dispersion des caractéristiques. Dans ce contexte, cette thèse étudie l'implantation de portes logiques élémentaires à base de CNTFETs. Une comparaison précise de plusieurs structures logiques montre les avantages de la structure complémentaire pour les applications futures. L'influence des variations paramétriques sur les caractéristiques des CNTFETs et des portes logiques complémentaires est ensuite analysée. Une étude synthétique des défauts et fautes transitoires spécifiques aux circuits à base de CNTFETs est présentée. Enfin, une structure logique redondante est proposée pour réduire l'effet des dispersions paramétriques et pour améliorer le rendement de fabrication en tolérant certains défauts.

Ever since their discovery in 1991, carbon nanotubes are of great interest to the scientific community due to their outstanding optical, mechanical and electrical properties. Considering their impressive properties, as for instance the high current carrying capability and the possibility of ballistic charge transport, carbon nanotubes are a desired channel material in field-effect transistors, especially with respect to high frequency communication electronics. Thus, many scientific studies on CNT-based field-effect transistors have been published so far. But despite the successful verification of excellent individual electric key values, corresponding experiments are mostly performed under synthetic conditions (considering e.g. temperature or gas atmosphere), which are not realizable during realistic application scenarios. Furthermore, technologically relevant factors like homogeneity, reproducibility and yield of functioning devices are often subordinated to the achievement of a single electric record value. Hence, this work focuses on the development of a fabrication technology for carbon nanotube field-effect transistors, that takes those factors into account. Thereby, this work expands the state of the art by introduction and statistical assessment of two cleaning processes: a) wet chemical removal of surfactant residues (sodium dodecylsulfate) from CNTs, integrated using the dielectrophoretic approach, by investigation and comparison of four procedures (de-ionized water, HNO3, oDCB, Ethanol); b) the reduction of process-related substrate contaminations by application of an oxygen plasma. Beyond that, the passivation of the final, working devices is developed further, as their typical definition as diffusion barrier is expanded by the reduction of parasitic capacitances in the transistor. In this context, two so far barely considered materials, hydrogen silsesquioxane and Xdi-dcs, a polymer mixture of poly(vinylphenol) and polymethylsilsesquioxane, are investigated and assessed. The novelty of the Xdi-dcs mixture causes the necessity of fundamental considerations on controllable etching procedures and resulting adaptions of the technological fabrication sequence.:Bibliographic description 3 List of abbreviations 10 List of symbols 10 1 Introduction 13 2 Basics of carbon nanotubes 15 2.1 Structural fundamentals 15 2.1.1 Hybridization of carbon 15 2.1.2 Structure of carbon nanotubes 17 2.2 Electronic properties 19 2.2.1 Band structure of graphene 19 2.2.2 Band structure of carbon nanotubes 20 2.2.3 Electronic transport in CNTs 22 2.3 Procedures for CNT integration 23 2.3.1 Growth by chemical vapor deposition 24 2.3.2 Transfer techniques 24 2.3.3 Dispersion-related integration procedures 25 2.4 Interaction of CNT and surfactant 28 3 Basics of CNT field-effect transistors 31 3.1 Principle of operation of conventional FETs 31 3.2 Distinctive features of CNT-based FETs 32 3.2.1 Metal - semiconductor contact 33 3.2.2 Linearity 38 3.3 Performance determining factors 41 3.3.1 Device architecture 41 3.3.2 Contact geometry 46 3.3.3 Other transistor dimensions 48 3.3.4 CNT-related characteristics 49 3.4 Hysteresis in transfer characteristics 51 3.4.1 Definition of hysteresis 51 3.4.2 Origins of hysteresis 52 3.4.3 Appearance of hysteresis 53 3.5 Passivation 56 3.5.1 Requirements 56 3.5.2 Importance of pre-treatments and process conditions 57 3.5.3 Overview of established passivation materials 58 4 Experimental work 63 4.1 Transistor design 63 4.2 Technology flow 66 4.3 Experimental procedures 71 4.3.1 Procedures for dissolution of SDS 71 4.3.2 Plasma treatment against surface contaminations 72 4.3.3 Evaluation of diffusion barriers 72 4.4 Instrumentation and characterization 74 4.4.1 Dielectrophoresis instrumentation 74 4.4.2 Topographical Characterization 74 4.4.3 Chemical characterization 75 4.4.4 Electrical characterization 76 5 Reduction of hysteresis 77 5.1 Removal of surfactant molecules from CNTs 77 5.1.1 Influence on molecule and CNT chemistry 78 5.1.2 Effect on transistor performance 80 5.2 Plasma-assisted removal of substrate contaminations 87 5.2.1 Influence on substrate surface 88 5.2.2 Effect on transistor performance 92 6 Passivation 97 6.1 Protection against environmental effects 97 6.1.1 Alterability of unpassivated CNT-FETs 98 6.1.2 Effects of O2 exclusion by dense passivation 99 6.1.3 Intentional doping using Y2O3 101 6.2 Passivation considering electrostatic aspects 106 6.2.1 Integration of Xdi-dcs as novel passivation 107 6.2.2 Comparison of two spin-coated dielectrics 111 6.3 Potential of double-layer approaches 113 6.3.1 Evaluation of the gas barrier performance 113 6.3.2 Influence on the transistor behavior 116 7 Summary and Outlook 121 Danksagung 127 Appendix 129 Bibliography 137 List of figures 156 List of tables 161 Selbstständigkeitserklärung 163 8 Thesen 165 9 Curriculum vitae 169<br>Bereits seit ihrer Entdeckung 1991 sind Kohlenstoffnanoröhren, aufgrund ihrer herausragenden optischen, mechanischen und elektrischen Eigenschaften, für die wissenschaftliche Community von großem Interesse. Ihre Verwendung als Kanalmaterial in Feld-Effekt Transistoren ist in Anbetracht ihrer außergewöhnlichen Eigenschaften, wie z. B. die hohe Stromtragfähigkeit, sowie die Möglichkeit des ballistischen Transports von Ladungsträgern besonders für die hochfrequente Kommunikationselektronik erstrebenswert. Dementsprechend viele wissenschaftliche Arbeiten befassen sich mit der Erforschung von auf Kohlenstoffnanoröhren basierenden Transistoren. Doch trotz des erfolgreichen Nachweises ausgezeichneter Werte für viele individuelle elektrische Kenngrößen, finden entsprechenden Experimente zumeist unter anwendungsfernen Bedingungen bezüglich Temperatur bzw. Gasatmosphäre statt. Darüber hinaus werden dem Erreichen eines elektrischen Rekordwertes oft technologisch relevante Größen wie Homogenität, Reproduzierbarkeit und Ausbeute an funktionsfähigen Bauteilen untergeordnet. Der Fokus dieser Arbeit liegt daher auf der Erarbeitung einer Technologie zur Herstellung Kohlenstoffnanoröhrenbasierter Feld-Effekt Transistoren, unter Berücksichtigung dieser Aspekte. Dabei erweitert diese Arbeit den Stand der Technik durch die Einführung und statistische Beurteilung zweier Reinigungsprozesse: a) der nasschemischen Beseitigung von Tensidresten (Natriumdodecylsulfat) an mittels Dielektrophorese integrierten CNTs, wobei insgesamt vier Prozeduren (de-ionisiertes Wasser, HNO3, oDCB, Ethanol) betrachtet und miteinander verglichen wurden; b) der Beseitigung von prozessbedingten Substratkontaminationen durch ein Sauerstoffplasma. Darüber hinaus wird die Passivierung der funktionsfähigen Bauelemente weiterentwickelt, indem ihre typische Definition als Diffusionsbarriere um den Aspekt der Verringerung parasitärer Kapazitäten im Transistor erweitert wird. In diesem Zusammenhang werden mit Wasserstoff-Silsesquioxane und Xdi-dcs, einem Polymergemisch aus Poly(vinylphenol) und Polymethylsilsesquioxane, zwei bislang wenig beachtete Materialien, untersucht und bewertet. Die Neuheit des Xdi-dcs Gemisches macht dabei fundamentale Untersuchungen zur Strukturierbarkeit und entsprechende technologische Anpassungen im Gesamtablauf nötig.:Bibliographic description 3 List of abbreviations 10 List of symbols 10 1 Introduction 13 2 Basics of carbon nanotubes 15 2.1 Structural fundamentals 15 2.1.1 Hybridization of carbon 15 2.1.2 Structure of carbon nanotubes 17 2.2 Electronic properties 19 2.2.1 Band structure of graphene 19 2.2.2 Band structure of carbon nanotubes 20 2.2.3 Electronic transport in CNTs 22 2.3 Procedures for CNT integration 23 2.3.1 Growth by chemical vapor deposition 24 2.3.2 Transfer techniques 24 2.3.3 Dispersion-related integration procedures 25 2.4 Interaction of CNT and surfactant 28 3 Basics of CNT field-effect transistors 31 3.1 Principle of operation of conventional FETs 31 3.2 Distinctive features of CNT-based FETs 32 3.2.1 Metal - semiconductor contact 33 3.2.2 Linearity 38 3.3 Performance determining factors 41 3.3.1 Device architecture 41 3.3.2 Contact geometry 46 3.3.3 Other transistor dimensions 48 3.3.4 CNT-related characteristics 49 3.4 Hysteresis in transfer characteristics 51 3.4.1 Definition of hysteresis 51 3.4.2 Origins of hysteresis 52 3.4.3 Appearance of hysteresis 53 3.5 Passivation 56 3.5.1 Requirements 56 3.5.2 Importance of pre-treatments and process conditions 57 3.5.3 Overview of established passivation materials 58 4 Experimental work 63 4.1 Transistor design 63 4.2 Technology flow 66 4.3 Experimental procedures 71 4.3.1 Procedures for dissolution of SDS 71 4.3.2 Plasma treatment against surface contaminations 72 4.3.3 Evaluation of diffusion barriers 72 4.4 Instrumentation and characterization 74 4.4.1 Dielectrophoresis instrumentation 74 4.4.2 Topographical Characterization 74 4.4.3 Chemical characterization 75 4.4.4 Electrical characterization 76 5 Reduction of hysteresis 77 5.1 Removal of surfactant molecules from CNTs 77 5.1.1 Influence on molecule and CNT chemistry 78 5.1.2 Effect on transistor performance 80 5.2 Plasma-assisted removal of substrate contaminations 87 5.2.1 Influence on substrate surface 88 5.2.2 Effect on transistor performance 92 6 Passivation 97 6.1 Protection against environmental effects 97 6.1.1 Alterability of unpassivated CNT-FETs 98 6.1.2 Effects of O2 exclusion by dense passivation 99 6.1.3 Intentional doping using Y2O3 101 6.2 Passivation considering electrostatic aspects 106 6.2.1 Integration of Xdi-dcs as novel passivation 107 6.2.2 Comparison of two spin-coated dielectrics 111 6.3 Potential of double-layer approaches 113 6.3.1 Evaluation of the gas barrier performance 113 6.3.2 Influence on the transistor behavior 116 7 Summary and Outlook 121 Danksagung 127 Appendix 129 Bibliography 137 List of figures 156 List of tables 161 Selbstständigkeitserklärung 163 8 Thesen 165 9 Curriculum vitae 169