Relevant bibliographies by topics / Transistor amplifier

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Transistor amplifier'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Transistor amplifier"

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Jurnal, Redaksi Tim. "PERANCANGAN RANGKAIAN PENGUAT DAYA DENGAN TRANSISTOR." Sutet 7, no. 2 (November 27, 2018): 88–92. http://dx.doi.org/10.33322/sutet.v7i2.81.

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The power amplifier circuit is a circuit used to amplify or magnify input signals. The use of a transistor as an amplifier is that the current on the base is used to control the larger current given to the collector through the transistor. The small current change on the controlling base is what is called a large change in the current flowing from the collector to the emitter. The advantages of the amplifier transistors can not only amplify the signal, but these transistors can also be used as current amplifiers, voltage amplifiers and power amplifiers.
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Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (March 1, 2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.
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Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (October 8, 2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a comparator. One input is driven by an incoming audio signal, and the other by a triangle wave or a sawtooth wave at the required switching frequency. The frequency of a triangular or sawtooth wave must be higher than the audio input. MOSFET transistors work in a complementary manner that operates as a switch. Triangle waves are usually generated by square waves fed to the integrator circuit. So the main part of processing audio signals into PWM (Pulse Width Modulation) is the integrator and comparator. In this paper, we will discuss the work of a class D amplifier system using the summing integrator method as its main part.
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Déchansiaud, A., R. Sommet, T. Reveyrand, D. Bouw, C. Chang, M. Camiade, F. Deborgies, and R. Quéré. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (May 24, 2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.
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S, Muthukumar, and John Wiselin M.C. "Class C Power Amplifier Using GaN Hemt Transistor." Journal of Advanced Research in Dynamical and Control Systems 11, no. 0009-SPECIAL ISSUE (September 25, 2019): 653–60. http://dx.doi.org/10.5373/jardcs/v11/20192618.

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Kumrey, G. R., and S. K. Mahobia. "STUDY AND PERFORMANCE TESTING OF TRANSISTOR WITH COMMON EMITTER AMPLIFIER CIRCUIT." International Journal of Research -GRANTHAALAYAH 4, no. 8 (August 31, 2016): 100–103. http://dx.doi.org/10.29121/granthaalayah.v4.i8.2016.2567.

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The transistor has ranking in 20th century technology. It is finding the application in all electronic devices as radios, computers. Integrated circuits are containing various transistors, which are made by silicon. The transistors are used to handle large current and/or large voltages. As example, the final audio stage in the stereo system used a power transistors amplifier to drive the various speakers. Transistors are device, which are utilizes a change in current to produce a large change in voltage, current, or power.
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Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (June 25, 2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.
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Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

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Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.
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Ballouk, ABDO Zouhair, Fawaz Mofdi, and Salem Ibrahim. "Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT." Journal of Engineering 27, no. 2 (February 1, 2021): 13–26. http://dx.doi.org/10.31026/j.eng.2021.02.02.

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The research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band. The Power Amplifier printed circuit board (PCB) prototype was designed using InGaP HBT homogeneous technology transistor and GaAs Heterojunction Bipolar Transistor (HBT) transistor. Two models have been compared; one of the models gave 16dB gain, and the other gave 23dB when using an input power signal (-15dBm). The PCB consumes 2.4W of power and has a physical dimension of 11 x 4 cm.
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Dvornikov, O. V., V. A. Tchekhovski, V. L. Dziatlau, A. V. Kunts, and N. N. Prokopenko. "Low temperature multi-differential operational amplifier." Doklady BGUIR 19, no. 5 (August 26, 2021): 52–60. http://dx.doi.org/10.35596/1729-7648-2021-19-5-52-60.

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A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.
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Dissertations / Theses on the topic "Transistor amplifier"

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Bulja, Senad. "New phase shifter, amplifier linearisation and transistor characterisation." Thesis, University of Essex, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442786.

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Julien, Marquis C. "Bipolar transistor modelling from a power amplifier designer's perspective." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq22121.pdf.

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Julien, Marquis C. (Marquis Christian) Carleton University Dissertation Engineering Electronics. "Bipolar transistor modelling from a power amplifier designer's perspective." Ottawa, 1997.

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Gallagher, Jeanne M. B. "A monolithic bipolar junction transistor amplifier in the common emitter configuration." Honors in the Major Thesis, University of Central Florida, 1992. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/98.

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This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf.edu/Systems/DigitalInitiatives/DigitalCollections/InternetDistributionConsentAgreementForm.pdf You may also contact the project coordinator, Kerri Bottorff, at kerri.bottorff@ucf.edu for more information.
Bachelors
Engineering
Electrical Engineering
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Neethling, M. (Marthinus). "A broadband microwave limiting amplifier." Thesis, Stellenbosch : University of Stellenbosch, 2004. http://hdl.handle.net/10019.1/16406.

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Thesis (MScIng)--University of Stellenbosch, 2004.
ENGLISH ABSTRACT: Limiting amplifiers are employed in electronic warfare (EW) systems requiring a high measure of amplitude control. These EW systems employ sensitive signal processing components that are unable to accept the full dynamic range of input signals the system must face. The limiting amplifier, however, offers the unique capability of reducing the received signal spectrum to a suitable dynamic range. A typical application of the limiting amplifier is in the instantaneous frequency measurement (IFM) receiver where the limiting amplifier allows the receiver to accurately measure pulsed signals over a wide input dynamic range The aim of this study is the design and analysis of a broadband limiting amplifier. Focus is placed on the design of a socalled backbone limiting amplifier (BLA) which forms an integral part of a proposed modular design approach for realizing a design with improved input dynamic range. A designed BLA is discussed in this thesis while insight is given as to the intricacies associated with its mechanism of operation. Over its 45 dB (- 40 to + 5 dBm) input dynamic range, the designed 2-18 GHz limiting amplifier offers a typical saturated output power of 7.5 dBm while harmonic suppression of better than 8.6 dBc is achieved. The BLA design was based on an existing limiting amplifier design, the so-called baseline limiting amplifier, employing alternating amplifiers and attenuators. Evaluation of the baseline limiting amplifier design allowed for formulation of a design hypothesis for realizing the BLA design. Physical measurements on the BLA were then used to scrutinize and validate the formulated design hypothesis. The requirements for realizing the BLA design were the establishment of a thorough radio frequency (RF) amplifier design capability, an understanding of the nonlinear phenomena associated with the RF amplifier and the utilization and control thereof within the limiting amplifier. Different RF amplifier designs that were carried out are discussed in this thesis, while it is shown how they were used to further investigate important design considerations for application in the BLA design. The computer-aided design packages namely MultiMatch and Microwave Office (MWO) were successfully used in realizing the desired broadband RF amplifier designs and the eventual BLA design.
AFRIKAANSE OPSOMMING: Beperker versterkers word gebruik in elektroniese oorlogvoering (EO) stelsels waar ’n redelike mate van amplitude beheer noodsaaklik is. Sensitiewe seinverwerking komponente, wat nie die volle dinamiese bereik van intreeseine kan hanteer nie, maak deel uit van hierdie EO stelsels. Die beperker versterker bied egter die unieke eienskap om die ontvangde seinspektra te reduseer tot ’n gepaste dinamiese bereik. ’n Tipiese toepassing vir die beperker versterker is as deel van die oombliksfrekwensie- meting ontvanger waar die beperker versterker die ontvanger toelaat om akkurate meting van gepulsde seine te doen oor ’n wye intree dinamiese bereik. Die doel van hierdie studie is die ontwerp en analise van ’n wye-band beperker versterker. Fokus word geplaas op die ontwerp van ’n sogenaamde kruks beperker versterker wat ’n integrale deel uitmaak van ’n voorgestelde modulêre ontwerpsbenadering, wat ten doel het om ’n verbeterde intree dinamiese bereik daar te stel. Oor die 45 dB (- 40 tot + 5 dBm) intree dinamiese bereik, bied die ontwerpte 2-18 GHz beperker versterker ’n tipiese versadigde uittreedrywing van 7.5 dBm terwyl harmonieke onderdrukking van beter as 8.6 dBc verkry is. Die ontwerp van hierdie komponent word in hierdie tesis bespreek terwyl belangrike aspekte oor die werking daarvan uitgelig word. Die ontwerp van die kruks beperker versterker is gebaseer op ’n bestaande beperker versterker ontwerp, of sogenaamde basis ontwerp, wat gebruik maak van afwisselende versterkers en attenuators. Evaluering van die basis ontwerp het toegelaat vir die formulering van 'n ontwerpshipotese om die kruks beperker versterker te realiseer. Fisiese metings op die kruks beperker versterker is gebruik om die ontwerpshipotese krities te evalueer. Om die kruks beperker versterker te realiseer moes die nodige RF versterker ontwerpsvaardigheid daargestel word, ’n begrip vir die nie-liniêere verskynsels in die RF versterker en die gebruik en beheer daarvan in die beperker versterker moes daargestel word. Verskeie RF versterkers wat ontwerp is word in hierdie tesis bespreek, terwyl getoon word hoe hierdie ontwerpe gebruik is om belangrike ontwerpsaspekte te ondersoek wat uiteindelik toegepas is in die kruks beperker versterker ontwerp. Die ontwerpspakkette naamlik MultiMatch en Microwave Office is suksesvol gebruik vir die realisering van die nodige wye-band RF versterkers en die uiteindelike kruks beperker versterker ontwerp.
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Hashim, Shaiful Jahari. "Wideband active envelope load-pull for robust power amplifier and transistor characterisation." Thesis, Cardiff University, 2010. http://orca.cf.ac.uk/54181/.

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The advent of fourth generation (4G) wireless communication with available modulation bandwidth ranging from 1 MHz to 20 MHz is starting to emerge. The linear modulation technique being employed means that the power amplifiers that support the standards need to have high degree of linearity. By nature, however, all power amplifiers are non-linear. Load-pull measurement system provides anindispensable non-linear tool for the characterization of power amplifier and transistor for linearity enhancement. Conventional passive or active load-pull has delay problem that get worse as the modulation frequency is increased beyond few MHz. Furthermore in order to provide robust non-linear measurement, load-pull system needs to provide bandwidth at least five times the modulation bandwidth by including the fifth-order inter-modulation (IMD5). This thesis presents, for the first time, delay compensation on the unique active envelope load-pull architecture providing constant impedance for bandwidth up to 20 MHz. In doing so, it provides a superior load-pull measurement and also the ability to directly control in-band impedances. Artificial variations imposed on the in-band impedances offer further insight on power amplifier and transistor behaviours under wideband multi-tone stimulus.
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Varelas, Theodoros Carleton University Dissertation Engineering Electrical. "A monolithic BiCMOS power amplifier for low power digital radio transmitter." Ottawa, 1992.

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Rastogi, Priyam. "Design of a Novel Transistor and aMicrowave Pallet&Testing of a Novel Power Amplifier." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-105077.

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Radiofrekvens baserad teknik har utlöst ett stort område inom forskning och utveckling. Denna avhandling arbete bygger på RF krafttransistorer och deras sedvänjor i olika tillämpningar. Traditionellt har RF-transistorer som används i applikationer basstationer. Men nu är de som används i nya applikationer som mikrovågstillämpningar, medicinsk utrustning, energikällor för kapning av trä, torkning kläder och för offentlig belysning. Därför designa RF transistorer krävs för att göra dem lämpliga för deras nya program. Avhandlingen fokuserar på att bygga mycket effektiva och billigt RF transistorer och RF förstärkare genom omkonstruktion flera avsnitt av dem. Rapporten är indelad i tre sektioner. Den första delen beskriver en ny RF-transistor från design till slutlig testfas. Förpackningen stil nya RF-effekttransistor modifieras genom att använda olika material för att göra förpackningar enklare och tillverkningsprocess mer effektiv. Den modifierade RF-transistorn visade positiva resultat, medan testning som styrker möjligheten att använda det nya paketet för RF-transistor. Den andra delen av rapporten beskriver en mikrovågsugn pall omdesignad genom att anpassa transistorn byggd i det första avsnittet. Detta omkonstruktion har en extra fördel av enkelhet, färre steg tillverkning och låg kostnad. Denna mikrovågsugn pall har en bandbredd på drift från 2900MHz till 3300MHz. Liknande till transistorn har mikrovågsugn pall förpackningen stil omgjorda utan att påverka dess elektriska beteende. Pallen visade positiva resultat, medan testning, vilket visar på genomförbarheten av denna nya design. Den sista delen av rapporten beskriver testning av en ny effektförstärkare. Syftet med detta test var att observera effekten på olika delar av effektförstärkaren under avlägsnande av cirkulatorn från det. Testet utfördes för att minska kostnaderna och storleken hos effektförstärkaren. Testet var inte helt lyckad indikerar behovet av omkonstruktion effektförstärkaren. Arbetet som presenteras i denna rapport representerar inledande forskning som behöver omfattande granskas i framtiden att minska kostnaderna och tillverkning tiden för RF-produkter.
Radio frequency based technology has unleashed a vast area in research and development. This thesis work is based on RF power transistors and their usages in different applications. Traditionally, RF transistors were used in base station applications. But now, they are being used in new applications like microwave applications, medical equipment, energy sources for cutting wood, drying clothes, and street lighting systems. Hence redesign of RF transistors is required to make them suitable for their new applications. The thesis work focuses on building highly efficient yet cheap RF transistors and RF amplifiers by redesigning several sections of them. This report is divided into three sections. The first section describes a novel RF transistor from design to final testing phase. The packaging style of the new RF power transistor is modified by using different material to make packaging process simpler and manufacturing process more efficient. The modified RF transistor showed positive results while testing, thus proving the feasibility of using the new package for RF transistor. The second section of the report describes a microwave pallet redesigned by adapting the transistor built in the first section. This redesigning has an added advantage of simplicity, fewer manufacturing steps, and low cost. This microwave pallet has a bandwidth of operation from 2900MHz to 3300MHz. Similar to the transistor, the microwave pallet packaging style was redesigned without affecting its electrical behavior. The pallet showed positive results while testing, thus proving the feasibility of this new design. The last section of the report describes the testing of a novel power amplifier. The aim of this test was to observe the effect on various parts of the power amplifier while removing the circulator from it. The test was performed to reduce the cost and size of the power amplifier. The test was not completely successful indicating the need for redesigning the power amplifier. The work presented in this report represents initial research that needs to be extensively examined in the future to reduce the cost and manufacturing time of the RF products.
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Yoo, Seungyup. "Field effect transistor noise model analysis and low noise amplifier design for wireless data communications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13024.

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Cardon, Christopher Don. "1/f AM and PM noise in a common source heterojunction field effect transistor amplifier." Laramie, Wyo. : University of Wyoming, 2007. http://proquest.umi.com/pqdweb?did=1317343431&sid=1&Fmt=2&clientId=18949&RQT=309&VName=PQD.

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Books on the topic "Transistor amplifier"

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Gelder, Erich. The transistor as AF-amplifier. Berlin: Siemens Aktiengesellschaft, 1988.

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Root, Loren F. Radio frequency/microwave robust design techniques applied to a transistor amplifier test fixture. Reading, Mass: Addison-Wesley, 1993.

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Vagts, Christopher Bryan. A single-transistor memory cell and sense amplifier for a gallium arsenide dynamic random access memory. Monterey, Calif: Naval Postgraduate School, 1992.

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Shvart͡s, N. Z. Usiliteli SVCh na polevykh tranzistorakh. Moskva: Radio i sviazʹ, 1987.

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1932-, Granberg Helge, ed. Radio frequency transistors: Principles and practical applications. Boston: Butterworth-Heinemann, 1993.

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1932-, Granberg Helge, ed. Radio frequency transistors: Principles and practical applications. 2nd ed. Boston: Newnes, 2001.

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Exploring solid-state amplifiers. Indianapolis, IN: Prompt Publications, 1999.

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Hood, John Linsley. Valve and transistor audio amplifiers. Oxford: Newnes, 1997.

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Carr, Joseph J. Mastering solid-state amplifiers. Blue Ridge Summit, PA: TAB Books, 1993.

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Gonzalez, Guillermo. Microwave transistor amplifiers: Analysis and design. 2nd ed. Upper Saddle River, N.J: Prentice Hall, 1997.

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Book chapters on the topic "Transistor amplifier"

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Tomar, G. S., and Ashish Bagwari. "Transistor Amplifier Frequency Response." In Algorithms for Intelligent Systems, 49–92. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0267-5_3.

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Jayendran, Ariacutty, and Rajah Jayendran. "The frequency response of a transistor amplifier." In Englisch für Elektroniker, 60–69. Wiesbaden: Vieweg+Teubner Verlag, 1996. http://dx.doi.org/10.1007/978-3-322-84907-6_9.

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Morris, Noel M. "Transistor amplifiers." In Mastering Electronic and Electrical Calculations, 284–304. London: Macmillan Education UK, 1996. http://dx.doi.org/10.1007/978-1-349-13705-3_14.

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Swami, Komal, and Ritu Sharma. "Optimum Performance of Carbon Nanotube Field-Effect Transistor Based Sense Amplifier D Flip-Flop Circuits." In Intelligent Computing Techniques for Smart Energy Systems, 293–301. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0214-9_33.

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Ritchie, G. J. "Audio power amplifiers." In Transistor Circuit Techniques, 153–76. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-6890-6_8.

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Bartlett, Jonathan. "Transistor Voltage Amplifiers." In Electronics for Beginners, 375–90. Berkeley, CA: Apress, 2020. http://dx.doi.org/10.1007/978-1-4842-5979-5_25.

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Ritchie, G. J. "Introduction to amplifiers and biasing." In Transistor Circuit Techniques, 26–42. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-6890-6_2.

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Wu, Keng C. "Operational Amplifiers." In Transistor Circuits for Spacecraft Power System, 60–96. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-1081-9_3.

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Ritchie, G. J. "Single-stage BJT amplifiers with feedback." In Transistor Circuit Techniques, 55–74. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-6890-6_4.

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du Preez, Jaco, and Saurabh Sinha. "Millimeter-Wave Stacked-Transistor Amplifiers." In Millimeter-Wave Power Amplifiers, 201–38. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-62166-1_6.

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Conference papers on the topic "Transistor amplifier"

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Sharroush, Sherif M., Yasser S. Abdalla, Ahmed A. Dessouki, and El-Sayed A. El-Badawy. "Subthreshold MOSFET transistor amplifier operation." In 2009 4th International Design and Test Workshop (IDT). IEEE, 2009. http://dx.doi.org/10.1109/idt.2009.5404144.

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Boubanga-Tombet, Stephane, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, and Taiichi Otsuji. "Graphene-Channel-Transistor Terahertz Amplifier." In 2018 76th Device Research Conference (DRC). IEEE, 2018. http://dx.doi.org/10.1109/drc.2018.8442272.

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Venger, A. P., H. L. Medina, R. Chavez, and A. Velasquez. "Reflection transistor amplifier for decimeter waveband." In 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology' Conference Proceedings. IEEE, 2003. http://dx.doi.org/10.1109/crmico.2003.158773.

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Pandey, Abhishek, Subhra Chakraborty, Suraj Kumar Saw, and Vijay Nath. "A darlington pair transistor based operational amplifier." In 2015 Global Conference on Communication Technologies (GCCT). IEEE, 2015. http://dx.doi.org/10.1109/gcct.2015.7342665.

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Schreurs, D., M. Myslinski, and H. Taher. "Large-signal behavioural modelling - from transistor to amplifier." In IET Seminar on High Efficiency Power Amplifier Design for Next Generation Wireless Applications. IEE, 2006. http://dx.doi.org/10.1049/ic:20060003.

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Mandell, Michael, and Arnold Berman. "Amplifier analysis using ideal boundary constraint transistor model." In 17th AIAA International Communications Satellite Systems Conference and Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1998. http://dx.doi.org/10.2514/6.1998-1236.

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Randa, James. "Simulator for amplifier and transistor noise-parameter measurements." In 2010 Conference on Precision Electromagnetic Measurements (CPEM 2010). IEEE, 2010. http://dx.doi.org/10.1109/cpem.2010.5544823.

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Randus, Martin, and Karel Hoffmann. "Broadband Medium-Power Transistor Amplifier 12-18 GHz." In 2007 17th International Conference Radioelektronika. IEEE, 2007. http://dx.doi.org/10.1109/radioelek.2007.371673.

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Rajkowski, Robert, and Bogdan Galwas. "Transistor Model Limitations in Harmonics Microwave Power Amplifier." In 2006 International Conference on Microwaves, Radar & Wireless Communications. IEEE, 2006. http://dx.doi.org/10.1109/mikon.2006.4345321.

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Eccleston, Kim W. "Analysis of a multi-transistor interleaved Doherty amplifier." In 2009 Asia Pacific Microwave Conference - (APMC 2009). IEEE, 2009. http://dx.doi.org/10.1109/apmc.2009.5384387.

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Reports on the topic "Transistor amplifier"

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Chin, Matthew, and Stephen Kilpatrick. Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs). Fort Belvoir, VA: Defense Technical Information Center, April 2010. http://dx.doi.org/10.21236/ada517899.

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Palmour, John W. Development of 6H-SiC CMOS Transistors for Insertion into a 350 deg C Operational Amplifier. Fort Belvoir, VA: Defense Technical Information Center, May 1992. http://dx.doi.org/10.21236/ada251339.

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Palmour, John W. Development of 6H-SiC CMOS Transistors for Insertion into a 350 deg C Operational Amplifier. Fort Belvoir, VA: Defense Technical Information Center, July 1992. http://dx.doi.org/10.21236/ada253760.

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