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Academic literature on the topic 'Transistor amplifier in C class'

Author: Grafiati

Published: 28 June 2021

Last updated: 8 February 2022

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Journal articles on the topic "Transistor amplifier in C class"

S, Muthukumar, and John Wiselin M.C. "Class C Power Amplifier Using GaN Hemt Transistor." Journal of Advanced Research in Dynamical and Control Systems 11, no. 0009-SPECIAL ISSUE (2019): 653–60. http://dx.doi.org/10.5373/jardcs/v11/20192618.

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Choi, Hojong. "Class-C Linearized Amplifier for Portable Ultrasound Instruments." Sensors 19, no. 4 (2019): 898. http://dx.doi.org/10.3390/s19040898.

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Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. For such instruments, class-C amplifiers could be among the most efficient amplifier schemes because, compared with a linear amplifier such as a class-A amplifier, they could critically reduce direct current (DC) power consumption, thus, increasing the battery life of the instruments. However, the reduced output voltage amplitudes of class-C amplifiers could deteriorate the sensitivity of the echo signals, thereby affecting the instrument performance. Therefore, a class-C linearized amplifier was developed. To verify the capability of the class-C linearized amplifier, typical pulse-echo responses using the focused piezoelectric transducers were tested. The echo signal amplitude generated by the piezoelectric transducers when using the class-C linearized amplifier was improved (1.29 Vp-p) compared with that when using the class-C amplifier alone (0.56 Vp-p). Therefore, the class-C linearized amplifier could be a potential candidate to increase the sensitivity of echo signals while reducing the DC power consumption for portable ultrasound instruments.

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Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a comparator. One input is driven by an incoming audio signal, and the other by a triangle wave or a sawtooth wave at the required switching frequency. The frequency of a triangular or sawtooth wave must be higher than the audio input. MOSFET transistors work in a complementary manner that operates as a switch. Triangle waves are usually generated by square waves fed to the integrator circuit. So the main part of processing audio signals into PWM (Pulse Width Modulation) is the integrator and comparator. In this paper, we will discuss the work of a class D amplifier system using the summing integrator method as its main part.

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Petrzela, Jiri. "Generalized Single Stage Class C Amplifier: Analysis from the Viewpoint of Chaotic Behavior." Applied Sciences 10, no. 15 (2020): 5025. http://dx.doi.org/10.3390/app10155025.

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This paper briefly describes a recent discovery that occurred during the study of the simplest mathematical model of a class C amplifier with a bipolar transistor. It is proved both numerically and experimentally that chaos can be observed in this simple network structure under three conditions: (1) the transistor is considered non-unilateral, (2) bias point provides cubic polynomial feedforward and feedback transconductance, and (3) the LC tank has very high resonant frequency. Moreover, chaos is generated by an autonomous class C amplifier; i.e., an isolated system without a driving force is analyzed. By the connection of a harmonic input signal, much more complex behavior can be observed. Additionally, due to the high degree of generalization of the amplifier cell, similar fundamental circuits can be ordinarily found as subparts of typical building blocks of a radio frequency signal path.

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Petrzela, Jiri. "New Chaotic Oscillator Derived from Class C Single Transistor-Based Amplifier." Mathematical Problems in Engineering 2020 (November 11, 2020): 1–18. http://dx.doi.org/10.1155/2020/2640629.

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This paper describes a new autonomous deterministic chaotic dynamical system having a single unstable saddle-spiral fixed point. A mathematical model originates in the fundamental structure of the class C amplifier. Evolution of robust strange attractors is conditioned by a bilateral nature of bipolar transistor with local polynomial or piecewise linear feedforward transconductance and high frequency of operation. Numerical analysis is supported by experimental verification and both results prove that chaos is neither a numerical artifact nor a long transient behaviour. Also, good accordance between theory and measurement has been observed.

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Choi, Hojong. "Development of a Class-C Power Amplifier with Diode Expander Architecture for Point-of-Care Ultrasound Systems." Micromachines 10, no. 10 (2019): 697. http://dx.doi.org/10.3390/mi10100697.

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Point-of-care ultrasound systems are widely used in ambulances and emergency rooms. However, the excessive heat generated from ultrasound transmitters has an impact on the implementation of piezoelectric transducer elements and on battery consumption, thereby affecting the system’s sensitivity and resolution. Non-linear power amplifiers, such as class-C amplifiers, could substitute linear power amplifiers, such as class-A amplifiers, which are currently used in point-of-care ultrasound systems. However, class-C power amplifiers generate less output power, resulting in a reduction of system sensitivity. To overcome this issue, we propose a new diode expander architecture dedicated to power amplifiers to reduce the effects of sinusoidal pulses toward the power supply. Thus, the proposed architecture could increase the input pulse amplitudes applied to the main transistors in the power amplifiers, hence increasing the output voltage of such amplifiers. To verify the proposed concept, pulse-echo responses from an ultrasonic transducer were tested with the developed class-C power amplifier using a resistor divider and the designed diode expander architecture. The peak-to-peak amplitude of the echo signals of the ultrasonic transducers when using a class-C power amplifier with a diode expander architecture (2.98 Vp–p) was higher than that for the class-C power amplifier with a resistor divider architecture (2.51 Vp–p). Therefore, the proposed class-C power amplifier with diode expander architecture is a potential candidate for improving the sensitivity performance of piezoelectric transducers for point-of-care ultrasound systems.

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Petrzela, Jiri. "Evidence of Strange Attractors in Class C Amplifier with Single Bipolar Transistor: Polynomial and Piecewise-Linear Case." Entropy 23, no. 2 (2021): 175. http://dx.doi.org/10.3390/e23020175.

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This paper presents and briefly discusses recent observations of dynamics associated with isolated generalized bipolar transistor cells. A mathematical model of this simple system is considered on the highest level of abstraction such that it comprises many different network topologies. The key property of the analyzed structure is its bias point since the transistor is modeled via two-port admittance parameters. A necessary but not sufficient condition for the evolution of autonomous complex behavior is the nonlinear bilateral nature of the transistor with arbitrary reason that causes this effect. It is proved both by numerical analysis and experimental measurement that chaotic motion is miscellaneous, robust, and it is neither numerical artifact nor long transient motion.

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Modzelewski, Juliusz, та Katarzyna Kulma. "An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers". Archives of Electrical Engineering 61, № 2 (2012): 221–37. http://dx.doi.org/10.2478/v10171-012-0019-x.

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An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers In the paper an improved method of calculation of the inductance and capacitances in the π1 circuit for Class A, AB, B, and C resonant power amplifiers is presented. This method is based on an assumption that the quality factor of the inductor is finite and the capacitors are lossless. The input parameters for calculations are the amplifier load resistance, the transistor load resistance, the quality factor of the inductor, the loaded quality factor of the designed circuit, and the operating frequency. The presented method allows reducing the required regulation range of π1 circuits elements in built resonant amplifiers as compared to the traditional calculation methods assuming lossless capacitors and inductor. This advantage is important, in particular, for long- and medium-wave transistor power amplifiers, where capacitances in π1 circuits are high comparing to typical trimming capacitors.

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WANG, YEN-CHU. "Invited paper. Comparisons of MESFET bipolar transistor and static induction transistor class C amplifiers." International Journal of Electronics 59, no. 1 (1985): 1–17. http://dx.doi.org/10.1080/00207218508920674.

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Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.

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Dissertations / Theses on the topic "Transistor amplifier in C class"

Rujzl, Miroslav. "Analýza a obvodové realizace speciálních chaotických systémů." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442418.

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This master‘s thesis deals with analysis of electronic dynamical systems exhibiting chaotic solution. In introduction, some basic concepts for better understanding of dynamical systems are explained. After introduction, current knowledge from the world of circuits exhibiting chaotic solutions are discussed. The best-known chaotic systems are analyzed numerically in Matlab software. Numerical analysis and experimental verification were demonstrated at C class transistor amplifier, which confirmed the chaotic behavior and generation of a strange attractor.

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Ayad, Mohammed. "Etude et Conception d’amplificateurs DOHERTY GaN en technologie Quasi - MMIC en bande C." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0027.

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Ce travail répond à un besoin industriel accru en termes d’amplification des signaux sur porteuses à enveloppes variables utilisés par les systèmes de télécommunications actuels. Ces signaux disposent d’un fort PAPR et d’une distribution statistique d’enveloppe centrée en-deçà de la valeur crête d’enveloppe. La raison pour laquelle les industriels télécoms requièrent alors des amplificateurs de très fortes puissances de sortie, robustes, fiables et ayant une dépense énergétique optimale le long de la dynamique d’enveloppe associée à un niveau de linéarité acceptable. Ce document expose les résultats d’étude et de réalisation de deux Amplificateurs de Puissance Doherty (APD) à haut rendement encapsulés en boîtiers plastiques QFN. Le premier est un amplificateur Doherty symétrique classique (APD-SE) et le second est un amplificateur à deux entrées RF (APD-DE). Ces démonstrateurs fonctionnant en bande C sont fondés sur l’utilisation de la technologie Quasi-MMIC associant des barrettes de puissance à base des transistors HEMTs AlGaN/GaN sur SiC à des circuits d’adaptation en technologie ULRC. L’approche Quasi-MMIC associée à la solution d’encapsulation plastique QFN permettant une meilleure gestion des comportements thermiques offre des performances électriques similaires à celles de la technologie MMIC avec des coûts et des cycles de fabrication très attractifs. Durant ces travaux, une nouvelle méthode d’évaluation des transistors dédiés à la conception d’amplificateurs Doherty a été développée et mise en oeuvre. L’utilisation intensive des simulations électromagnétiques 2.5D et 3D a permis de bien prendre en compte les effets de couplages entre les différents circuits dans l’environnement du boîtier QFN. Les résultats des tests des amplificateurs réalisés fonctionnant sur une bande de 1GHz ont permis de valider la méthode de conception et ont montré que les concepts avancés associés à l’approche Quasi-MMIC ainsi qu’à des technologies d’encapsulation plastique, peuvent générer des fonctions micro-ondes innovantes. Les caractérisations de l’APD-DE ont relevé l’intérêt inhérent à la préformation des signaux d’excitation et des points de polarisation de chaque étage de l’amplificateur<br>This work responds to an increased industrial need for on carrier signals with variable envelope amplification used by current telecommunications systems. These signals have a strong PAPR and an envelope statistical distribution centred below the envelope peak value, the reason why the telecom industrialists then require a robust and reliable high power amplifiers having an energy expenditure along of the envelope dynamics associated with an acceptable level of linearity. This document presents the results of the study and realization of two, high efficiency, Doherty Power Amplifiers (DPA) encapsulated in QFN plastic packages. The first is a conventional Doherty power Amplifier (DPA-SE) and the second is a dual-input Doherty power amplifier (DPA-DE). These C-band demonstrators are based on the use of Quasi-MMIC technology combining power bars based on the AlGaN/GaN transistors on SiC to matching circuits in ULRC technology. The Quasi-MMIC approach combined with Quasi-MMIC approach combined with QFN plastic package solution for better thermal behaviour management offers electrical performances similar to those of MMIC technology with very attractive coasts and manufacturing cycles. During this work, a new evaluation method for the transistors dedicated to the design of DPA was developed and implemented. The intensive use of 2.5D and 3D electromagnetic simulations made it possible to take into account the coupling effects existing between the different circuits in the QFN package environment. The results of the tests of the amplifiers realised and operating on 1GHz bandwidth validated the design method and showed that the advanced concepts associated with the Quasi-MMIC approach as well as plastic encapsulation technologies can generate innovative microwave functions. The characterizations of the DPA-DE have noted the interest inherent in the preformation of the excitation signals and the bias points of each stage of the amplifier

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Sajedin, M., Issa T. Elfergani, J. Rodriguez, et al. "Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks." RadioEngineering, 2020. http://hdl.handle.net/10454/18495.

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yes<br>This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6GHz frequency.

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LaCaille, Greg. "A Constant Conduction Angle Biased RF Power Amplifier for Improved Linearization in Class C Operation." DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/342.

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Class C power amplifiers offer higher efficiency than class B power amplifiers, but suffer from poor linearity. A feedback based biasing system to improve the linearity of a class C power amplifier is designed. A class B amplifier with a gain of 20 dB and 20 MHz bandwidth at 900 MHz acts as the launching point for the design. The biasing and output network of the class B power amplifier is modified to produce a class C amplifier at conduction angles of 180°, 162°, 126°, 90°, and 54°. A feedback based biasing system, which uses two matched and scaled down transistors, compares the DC current of a class B and a class C biased transistor. This comparison is used to control the biasing voltage of the amplifier. The performance for each class C amplifier is simulated with the proposed constant conduction angle biasing (CCAB) system. The conduction angle, transducer gain, operational gain, VSWR, and drain efficiency are measured from simulation for each of the 5 normally biased and 5 CCAB amplifiers. Dynamic ranges of over 8 dB are demonstrated for the CCAB amplifiers. The effects of loop gain, temperature, and operating frequency for the 126° amplifier are simulated. The 3rd order intermodulation products of a 10 MHz AM modulated 900 MHz signal are compared for the 126° normally biased and CCAB biased amplifier as well as the class B amplifier. The difference between the fundamental and the 3rd order intermodulation products is shown to improve from 9.9 dB for the normal class C to 28.7 dB for the CCAB amplifier.

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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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Hussaini, Abubakar S. "Energy efficient radio frequency system design for mobile WiMax applications. Modelling, optimisation and measurement of radio frequency power amplifier covering WiMax bandwidth based on the combination of class AB, class B, and C operations." Thesis, University of Bradford, 2012. http://hdl.handle.net/10454/5749.

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In today´s digital world, information and communication technology accounts for 3% and 2% of the global power consumption and CO2 emissions respectively. This alarming figure is on an upward trend, as future telecommunications systems and handsets will become even more power hungry since new services with higher bandwidth requirements emerge as part of the so called ¿future internet¿ paradigm. In addition, the mobile handset industry is tightly coupled to the consumer need for more sophisticated handsets with greater battery lifetime. If we cannot make any significant step to reducing the energy gap between the power hungry requirements of future handsets, and what battery technology can deliver, then market penetration for 4G handsets can be at risk. Therefore, energy conservation must be a design objective at the forefront of any system design from the network layer, to the physical and the microelectronic counterparts. In fact, the energy distribution of a handset device is dominated by the energy consumption of the RF hardware, and in particular the power amplifier design. Power amplifier design is a traditional topic that addresses the design challenge of how to obtain a trade-off between linearity and efficiency in order to avoid the introduction of signal distortion, whilst making best use of the available power resources for amplification. However, the present work goes beyond this by investigating a new line of amplifiers that address the green initiatives, namely green power amplifiers. This research work explores how to use the Doherty technique to promote efficiency enhancement and thus energy saving. Five different topologies of RF power amplifiers have been designed with custom-made signal splitters. The design core of the Doherty technique is based on the combination of a class B, class AB and a class C power amplifier working in synergy; which includes 90-degree 2-way power splitter at the input, quarter wavelength transformer at the output, and a new output power combiner. The frequency range for the amplifiers was designed to operate in the 3.4 - 3.6 GHz frequency band of Europe mobile WiMAX. The experimental results show that 30dBm output power can be achieved with 67% power added efficiency (PAE) for the user terminal, and 45dBm with 66% power added efficiency (PAE) for base stations which marks a 14% and 11% respective improvement over current stateof- the-art, while meeting the power output requirements for mobile WiMAX applications.

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Hussaini, Abubakar Sadiq. "Energy efficient radio frequency system design for mobile WiMax applications : modelling, optimisation and measurement of radio frequency power amplifier covering WiMax bandwidth based on the combination of class AB, class B, and C operations." Thesis, University of Bradford, 2012. http://hdl.handle.net/10454/5749.

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In today's digital world, information and communication technology accounts for 3% and 2% of the global power consumption and CO2 emissions respectively. This alarming figure is on an upward trend, as future telecommunications systems and handsets will become even more power hungry since new services with higher bandwidth requirements emerge as part of the so called 'future internet' paradigm. In addition, the mobile handset industry is tightly coupled to the consumer need for more sophisticated handsets with greater battery lifetime. If we cannot make any significant step to reducing the energy gap between the power hungry requirements of future handsets, and what battery technology can deliver, then market penetration for 4G handsets can be at risk. Therefore, energy conservation must be a design objective at the forefront of any system design from the network layer, to the physical and the microelectronic counterparts. In fact, the energy distribution of a handset device is dominated by the energy consumption of the RF hardware, and in particular the power amplifier design. Power amplifier design is a traditional topic that addresses the design challenge of how to obtain a trade-off between linearity and efficiency in order to avoid the introduction of signal distortion, whilst making best use of the available power resources for amplification. However, the present work goes beyond this by investigating a new line of amplifiers that address the green initiatives, namely green power amplifiers. This research work explores how to use the Doherty technique to promote efficiency enhancement and thus energy saving. Five different topologies of RF power amplifiers have been designed with custom-made signal splitters. The design core of the Doherty technique is based on the combination of a class B, class AB and a class C power amplifier working in synergy; which includes 90-degree 2-way power splitter at the input, quarter wavelength transformer at the output, and a new output power combiner. The frequency range for the amplifiers was designed to operate in the 3.4 - 3.6 GHz frequency band of Europe mobile WiMAX. The experimental results show that 30dBm output power can be achieved with 67% power added efficiency (PAE) for the user terminal, and 45dBm with 66% power added efficiency (PAE) for base stations which marks a 14% and 11% respective improvement over current stateof- the-art, while meeting the power output requirements for mobile WiMAX applications.

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Giry, Alexandre. "Étude des potentialités des technologies CMOS avancées pour les radiofréquences : application aux amplificateurs de puissance." Grenoble INPG, 2001. http://www.theses.fr/2001INPG0057.

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Pecen, Vojtěch. "Výkonové zesilovače v pevné fázi pro pásmo L." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316425.

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The goal of this diploma's thesis is to create a design of a two stages amplifier working in a band reserved for the secondary surveillance radar at the frequency of 1090 MHz. Output power of the amplifier should be 20 W and efficiency should be as high as possible. Because of this the second stage is designed in class C. Contents of this diploma's thesis include a theoretical analysis, simulations of the amplifier parameters, comparison of the Ansys Designer and AWR Microwave Office simulation programs and design of both stages of the amplifier, followed by a comparison of the measured parameters with the simulations.

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Rashid, S. M. Shahriar. "Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487.

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Books on the topic "Transistor amplifier in C class"

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO ́substrate. National Aeronautics and Space Administration, 1992.

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J, Nahra J., and United States. National Aeronautics and Space Administration., eds. C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO □substrate. National Aeronautics and Space Administration, 1992.

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C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO substrate. National Aeronautics and Space Administration, 1992.

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J, Nahra J., and United States. National Aeronautics and Space Administration., eds. C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO substrate. National Aeronautics and Space Administration, 1992.

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Conference papers on the topic "Transistor amplifier in C class"

Montaseri, Mohammad Hassan, Janne Aikio, Timo Rahkonen, and Aarno Parssinen. "Design of Stacked-MOS Transistor mm-Wave Class C Amplifiers for Doherty Power Amplifiers." In 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). IEEE, 2018. http://dx.doi.org/10.1109/norchip.2018.8573519.

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Samal, Lopamudra, K. K. Mahapatra, and K. Raghuramaiah. "Class-C power amplifier design for GSM application." In 2012 International Conference on Computing, Communication and Applications (ICCCA). IEEE, 2012. http://dx.doi.org/10.1109/iccca.2012.6179216.

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Rassohina, J. V., and V. G. Krizhanovsky. "Power characteristics of the class E amplifier on the bipolar transistor." In 2000 10th International Crimean Microwave Conference. Microwave and Telecommunication Technology. Conference Proceedings. IEEE, 2000. http://dx.doi.org/10.1109/crmico.2000.1255876.

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Collins, Gayle F., and John Wood. "Class-E power amplifier design at 2.5 GHz using a packaged transistor." In 2013 IEEE Topical Conference on Biomedical Wireless Technologies, Networks, and Sensing Systems (BioWireleSS). IEEE, 2013. http://dx.doi.org/10.1109/biowireless.2013.6613682.

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Collins, Gayle F., and John Wood. "Class-E power amplifier design at 2.5 GHz using a packaged transistor." In 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). IEEE, 2013. http://dx.doi.org/10.1109/pawr.2013.6490198.

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Collins, G. F., and J. Wood. "Class-E power amplifier design at 2.5 GHz using a packaged transistor." In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE, 2013. http://dx.doi.org/10.1109/sirf.2013.6489465.

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Mediano, Arturo, and Nathan O. Sokal. "Class-E RF power amplifier with a flat-top transistor-voltage waveform." In 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012. IEEE, 2012. http://dx.doi.org/10.1109/mwsym.2012.6259441.

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Collins, Gayle F., and John Wood. "Class-E power amplifier design at 2.5 GHz using a packaged transistor." In 2013 IEEE Radio and Wireless Symposium (RWS). IEEE, 2013. http://dx.doi.org/10.1109/rws.2013.6486707.

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Krause, J., H. Wittkopf, M. Schroter, S. Sinha, and M. Weststrate. "Sensitivity of class-E power amplifier performance to individual transistor model parameters." In 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG). IEEE, 2013. http://dx.doi.org/10.1109/iscdg.2013.6656300.

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Ng-Molina, F. Y., T. M. Martin-Guerrero, C. Camacho-Penalosa, J. A. Garcia, and J. Mata-Contreras. "GaN transistor-based Class E power amplifier for the low L-band." In 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC). IEEE, 2011. http://dx.doi.org/10.1109/inmmic.2011.5773342.

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