Journal articles: 'Transistor amplifier'

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Jurnal, Redaksi Tim. "PERANCANGAN RANGKAIAN PENGUAT DAYA DENGAN TRANSISTOR." Sutet 7, no. 2 (November 27, 2018): 88–92. http://dx.doi.org/10.33322/sutet.v7i2.81.

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The power amplifier circuit is a circuit used to amplify or magnify input signals. The use of a transistor as an amplifier is that the current on the base is used to control the larger current given to the collector through the transistor. The small current change on the controlling base is what is called a large change in the current flowing from the collector to the emitter. The advantages of the amplifier transistors can not only amplify the signal, but these transistors can also be used as current amplifiers, voltage amplifiers and power amplifiers.

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Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (March 1, 2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.

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Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (October 8, 2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a comparator. One input is driven by an incoming audio signal, and the other by a triangle wave or a sawtooth wave at the required switching frequency. The frequency of a triangular or sawtooth wave must be higher than the audio input. MOSFET transistors work in a complementary manner that operates as a switch. Triangle waves are usually generated by square waves fed to the integrator circuit. So the main part of processing audio signals into PWM (Pulse Width Modulation) is the integrator and comparator. In this paper, we will discuss the work of a class D amplifier system using the summing integrator method as its main part.

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Déchansiaud, A., R. Sommet, T. Reveyrand, D. Bouw, C. Chang, M. Camiade, F. Deborgies, and R. Quéré. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (May 24, 2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.

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S, Muthukumar, and John Wiselin M.C. "Class C Power Amplifier Using GaN Hemt Transistor." Journal of Advanced Research in Dynamical and Control Systems 11, no. 0009-SPECIAL ISSUE (September 25, 2019): 653–60. http://dx.doi.org/10.5373/jardcs/v11/20192618.

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Kumrey, G. R., and S. K. Mahobia. "STUDY AND PERFORMANCE TESTING OF TRANSISTOR WITH COMMON EMITTER AMPLIFIER CIRCUIT." International Journal of Research -GRANTHAALAYAH 4, no. 8 (August 31, 2016): 100–103. http://dx.doi.org/10.29121/granthaalayah.v4.i8.2016.2567.

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The transistor has ranking in 20th century technology. It is finding the application in all electronic devices as radios, computers. Integrated circuits are containing various transistors, which are made by silicon. The transistors are used to handle large current and/or large voltages. As example, the final audio stage in the stereo system used a power transistors amplifier to drive the various speakers. Transistors are device, which are utilizes a change in current to produce a large change in voltage, current, or power.

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Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (June 25, 2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

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Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

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Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

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Ballouk, ABDO Zouhair, Fawaz Mofdi, and Salem Ibrahim. "Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT." Journal of Engineering 27, no. 2 (February 1, 2021): 13–26. http://dx.doi.org/10.31026/j.eng.2021.02.02.

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The research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band. The Power Amplifier printed circuit board (PCB) prototype was designed using InGaP HBT homogeneous technology transistor and GaAs Heterojunction Bipolar Transistor (HBT) transistor. Two models have been compared; one of the models gave 16dB gain, and the other gave 23dB when using an input power signal (-15dBm). The PCB consumes 2.4W of power and has a physical dimension of 11 x 4 cm.

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Dvornikov, O. V., V. A. Tchekhovski, V. L. Dziatlau, A. V. Kunts, and N. N. Prokopenko. "Low temperature multi-differential operational amplifier." Doklady BGUIR 19, no. 5 (August 26, 2021): 52–60. http://dx.doi.org/10.35596/1729-7648-2021-19-5-52-60.

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A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.

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Пашенцев, В. Н. "Изменение характеристик полупроводниковых структур СВЧ-усилителей под воздействием импульсного лазерного излучения." Журнал технической физики 91, no. 11 (2021): 1715. http://dx.doi.org/10.21883/jtf.2021.11.51533.43-21.

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The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5–8 GHz and integrated amplifiers with an operating frequency range of 0.4–6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 µm and 0.53 µm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs.

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SARKOZY, S., X. MEI, W. YOSHIDA, P. H. LIU, M. LANGE, J. LEE, Z. ZHOU, et al. "AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 399–404. http://dx.doi.org/10.1142/s0129156411006684.

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Pivotal in the design of circuits is the ability to efficiently translate available transistor gain to high gain per stage. Remarkably, for 35-nm InP HEMT transistors, the efficiency of this translation remains high even up to ~0.5 THz. The ever shrinking wavelength correlated with higher frequencies necessitates a scaling of not only the device layout, but also of the passive elements and wafer thickness. Furthermore, to avoid distributed effects, the length of transistor gate fingers must be reduced.

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Jiang, Chen, Hyung Woo Choi, Xiang Cheng, Hanbin Ma, David Hasko, and Arokia Nathan. "Printed subthreshold organic transistors operating at high gain and ultralow power." Science 363, no. 6428 (February 14, 2019): 719–23. http://dx.doi.org/10.1126/science.aav7057.

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Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of <1 nanowatt. The use of a Schottky barrier for the source gave the transistor geometry-independent electrical characteristics and accommodated the large dimensional variation in inkjet-printed features. These transistors exhibited good reliability with negligible threshold-voltage shift. We demonstrated this capability with an ultralow-power high-gain amplifier for the detection of electrophysiological signals and showed a signal-to-noise ratio of >60 decibels and noise voltage of <0.3 microvolt per hertz1/2at 100 hertz.

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Choi, Hojong. "Stacked Transistor Bias Circuit of Class-B Amplifier for Portable Ultrasound Systems." Sensors 19, no. 23 (November 29, 2019): 5252. http://dx.doi.org/10.3390/s19235252.

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The performance of portable ultrasound systems is affected by the excessive heat generated by amplifiers, thereby reducing the sensitivity and resolution of the transducer devices used in ultrasound systems. Therefore, the amplifier needs to generate low amounts of heat to stabilize portable ultrasound systems. To properly control the amplifier, the related bias circuit must provide proper DC bias voltages for long time periods in ultrasound systems. To this end, a stacked transistor bias circuit was proposed to achieve a relatively constant amplifier performance irrespective of temperature variance without any cooling systems as the portable ultrasound system structure is limited. To prove the proposed concept, the performance of the gain and DC current consumption at different experimental times was measured and compared to a developed class-B amplifier with different bias circuits. The amplifier with the stacked transistor bias circuit outperformed with regard to the gain and DC current variance versus time (−0.72 dB and 0.065 A, respectively) compared to the amplifier with a typical resistor divider bias circuit (−5.27 dB and 0.237 A, respectively) after a certain time (5 min). Consequently, the proposed stacked transistor bias circuit is a useful electronic device for portable ultrasound systems with limited structure sizes because of its relatively low gain and DC current variance with respect to time.

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Kiełczyński, Piotr, and Marek Szalewski. "Transistor Effect in the Cochlear Amplifier." Archives of Acoustics 39, no. 1 (March 1, 2015): 117–24. http://dx.doi.org/10.2478/aoa-2014-0012.

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Abstract The paper presents a new electromechanical amplifying device i.e., an electromechanical biological transistor. This device is located in the outer hair cell (OHC), and constitutes a part of the Cochlear amplifier. The physical principle of operation of this new amplifying device is based on the phenomenon of forward mechanoelectrical transduction that occurs in the OHC's stereocilia. Operation of this device is similar to that of classical electronic Field Effect Transistor (FET). In the considered electromechanical transistor the input signal is a mechanical (acoustic) signal. Whereas the output signal is an electric signal. It has been shown that the proposed electromechanical transistor can play a role of the active electromechanical controlled element that has the ability to amplify the power of input AC signals. The power required to amplify the input signals is extracted from a battery of DC voltage. In the considered electromechanical transistor, that operates in the amplifier circuit, mechanical input signal controls the flow of electric energy in the output circuit, from a battery of DC voltage to the load resistance. Small signal equivalent electrical circuit of the electromechanical transistor is developed. Numerical values of the electrical parameters of the equivalent circuit were evaluated. The range, which covers the levels of input signals (force and velocity) and output signals (voltage, current) was determined. The obtained data are consistent with physiological data. Exemplary numerical values of currents, voltages, forces, vibrational velocities and power gain (for the assumed input power levels below 1 picowatt (10-12 W)), were given. This new electromechanical active device (transistor) can be responsible for power amplification in the cochlear amplifier in the inner ear.

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Grujic, Dusan, and Lazar Saranovac. "Broadband power amplifier limitations due to package parasitics." Serbian Journal of Electrical Engineering 12, no. 3 (2015): 275–91. http://dx.doi.org/10.2298/sjee1503275g.

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Limitations of CMOS broadband power amplifiers due to package parasitics have been explored in this paper. The constraints of power amplifier matching network, realized as a third-order Chebyshev filter, have been derived, and a new power amplifier design flow has been proposed. As an example of a proposed design flow, an UWB power amplifier has been designed. Transistor level large signal simulation results are in excellent agreement with theoretical predictions.

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Basham, Eric, and David Parent. "Design Optimization of Transistors Used for Neural Recording." Active and Passive Electronic Components 2012 (2012): 1–10. http://dx.doi.org/10.1155/2012/472306.

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Neurons cultured directly over open-gate field-effect transistors result in a hybrid device, the neuron-FET. Neuron-FET amplifier circuits reported in the literature employ the neuron-FET transducer as a current-mode device in conjunction with a transimpedance amplifier. In this configuration, the transducer does not provide any signal gain, and characterization of the transducer out of the amplification circuit is required. Furthermore, the circuit requires a complex biasing scheme that must be retuned to compensate for drift. Here we present an alternative strategy based on thegm/Iddesign approach to optimize a single-stage common-source amplifier design. Thegm/Iddesign approach facilitates in circuit characterization of the neuron-FET and provides insight into approaches to improving the transistor process design for application as a neuron-FET transducer. Simulation data for a test case demonstrates optimization of the transistor design and significant increase in gain over a current mode implementation.

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Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee, and M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.

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Weikle, R. M., M. Kim, J. B. Hacker, M. P. De Lisio, Z. B. Popovic, and D. B. Rutledge. "Transistor oscillator and amplifier grids." Proceedings of the IEEE 80, no. 11 (1992): 1800–1809. http://dx.doi.org/10.1109/5.175256.

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Eccleston, K. W. "Four-transistor interleaved Doherty amplifier." Electronics Letters 45, no. 15 (2009): 792. http://dx.doi.org/10.1049/el.2009.1041.

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MandayamNayaka, C. S. "High-Frequency Transistor Amplifier Analysis." IEEE Transactions on Education 49, no. 1 (February 2006): 58–60. http://dx.doi.org/10.1109/te.2005.856151.

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Beev, Nikolai, and Mikko Kiviranta. "Fully differential cryogenic transistor amplifier." Cryogenics 57 (October 2013): 129–33. http://dx.doi.org/10.1016/j.cryogenics.2013.06.004.

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Lai, Jui-Lin, Ting-You Lin, Cheng-Fang Tai, and Rong-Jian Chen. "To Design a Cascode LNA by Using Channel-Length-Split Device with Constant-gm in a 0.35 μm Silicon CMOS Technology." Open Materials Science Journal 10, no. 1 (July 15, 2016): 79–88. http://dx.doi.org/10.2174/1874088x01610010079.

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In the paper, the folded-cascode low-noise operational amplifier (LNA) with constant-gm is proposed and analyzed. The channel-length split technique adopted to expand ratio of W/L of the differential pair transistor to improve the performance of LNA for the gain bandwidth product, noise and offset voltage. The channel-length split method is separated differential input transistor into 2 transistors in series. The area of the transistor (W, L) can be properly increased to effectively decrease the flick noise. The double indirect-frequency compensation technique and the clamping circuit are adopted in amplifier to increase the bandwidth. The proposed two sets input differential pair can be provided a constant-gm value and rail-to-rail swing during the operating region. The floating-point structure is used to reach rail-to-rail swing at output stage. Simulation results show that the gain, constant-gm in input stag, noise, offset-voltage, PSRR, CMRR and ICMR of amplifier are improved. The characteristics of LNA are successfully verified by the TSMC 0.35um 2P4M CMOS technology. There have a great potential in the VLSI implementation used in the portable electronic and bio-medicine product applications.

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Yuan, Zeng Min, and Xu Jin Yuan. "Querying the Validity of Small-Signal Amplifier Conception." Advanced Materials Research 433-440 (January 2012): 2774–79. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.2774.

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Signal source output resistance and negative feedback resistance all contribute to restrain transistor non-linearity and improve amplifier linearity. Amplifier sine output voltage and transistor emitting junction non-sine voltage coexist. Transistor emitting junction non-sine voltage is a by-product and doesn’t affect amplifier function. It was proved by experiment and in theory that the input signal magnitude in the basic common-emitter amplifier is not limited with small signal extent condition Ubem≤10mV, and output range is not limited with Ubem≤10mV. It was proved that small signal amplifier conception does not accord with the facts and might be not suitable.

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Simmich, Sebastian, Andreas Bahr, and Robert Rieger. "Noise Efficient Integrated Amplifier Designs for Biomedical Applications." Electronics 10, no. 13 (June 23, 2021): 1522. http://dx.doi.org/10.3390/electronics10131522.

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The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2.

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Maralani, A., Michael S. Mazzola, David C. Sheridan, Igor Sankin, and Volodymyr Bondarenko. "Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design." Materials Science Forum 615-617 (March 2009): 915–18. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.915.

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The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes available in silicon. However, analogous circuits have been the subject of research in Silicon Carbide (SiC). Among SiC devices, 4H-SiC Lateral-Trench JFET (LTJFET) transistor offers advantages and new opportunities to make affordable and reliable analog integrated circuits for harsh environment. In this paper: (1) SiC LTJFET is characterized for modeling and simulation, (2) effect of temperature variation on SiC LTJFET threshold voltage and small signal parameters are reported, (3) gain performance and small signal parameters of the basic analog circuit block, Common Source (CS) amplifier, based on the variation of the load transistors threshold voltage (Vth) are studied and analyzed, and (4) frequency and transient response of the cascoded CS amplifier (CS-Cas) are reported.

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Kim, Hyungseup, Yongsu Kwon, Donggeun You, Hyun-Woong Choi, Seong Hyun Kim, Hyunwoo Heo, Choul-Young Kim, Hi-Deok Lee, and Hyoungho Ko. "A 5.43 nV/√Hz Chopper Operational Amplifier Using Lateral PNP Input Stage with BJT Current Mirror Base Current Cancellation." Applied Sciences 10, no. 23 (November 25, 2020): 8376. http://dx.doi.org/10.3390/app10238376.

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This paper presents a low-noise chopper operational amplifier using a lateral PNP input stage with bipolar junction transistor (BJT) current mirror base current cancellation. The BJT has a lower noise characteristic than the metal–oxide–semiconductor (MOS) transistor, where low-noise characteristics can be achieved by implanting the BJT to the input stage of the amplifier; however, the base current of the BJT input stage causes low input impedance of the amplifier. The BJT current mirror base current cancellation technique is implemented to enhance the input impedance of the BJT input stage by canceling the base current. BJT current mirror base current cancellation is implemented with a simple scheme using NPN transistors with deep n-well in a generic complementary metal–oxide–semiconductor (CMOS) process. For further noise reduction with the BJT input stage, a chopper amplifier scheme is adopted to reduce low-frequency components such as 1/f noise terms in the low-frequency range. The prototype chip is fabricated in a 0.18-μm CMOS process. The active area of the prototype amplifier is 0.213 mm2. The measured input-referred noise is 5.43 nV/√Hz. The measured input base current of the amplifier with base current cancellation is 67.971 nA. The total amplifier current consumption is 278.3 μA, with a power supply of 3.3 V.

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Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet, and Agnieszka Konczykowska. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (August 7, 2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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Aronov, V. L., E. M. Savchenko, D. M. Moseykin, A. D. Pershin, and D. G. Drozdov. "ANALYSIS OF THE CONDITIONS OF OCCURRENCE AND SUPPRESSION OF LATERAL VIBRATIONS IN MICROWAVE POWER FETS." Electronic engineering Series 2 Semiconductor devices 258, no. 3 (2020): 4–21. http://dx.doi.org/10.36845/2073-8250-2020-258-3-4-21.

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Lateral instability is inherent in power transistors structures, consisting of several simple transistors connected in parallel. The large number of transistor elements complicates the analysis of such instability. The introduction of suppressing resistors makes it possible to prevent the occurrence of lateral oscillations, however there are no unambiguous criteria for achieving stability this way. The matter is further complicated by the fact that transistor exhibits nonlinear operation in a typical amplifier stage, and the operating conditions in many cases correspond to a relatively wide range of frequencies. In this paper, we present an analysis of lateral instability of a power amplifier stage, created on a basis of modern GaN field-effect transistor (FET). We had designed all dies and circuits for this FET. The main feature of the analysis is that we carried it out in the time domain, which made possible to estimate the stability of the stage not only under the excitation power pulse, but also after the end of the pulse. Our approach makes it possible to assess the stability of the amplifier between the excitation pulses, which is very important from the operational point of view. We calculated the estimates of operational stability and stability factor using a simplified transistor model, with the multi-element model reduced to a two-element model. Nevertheless, the results of the estimates retain their significance in real conditions, when the introduction of suppressing resistors creates a significant margin of stability, including the actual operating frequency band of the stage. To date, the data we have obtained after the manufacture of the samples only partially confirms the calculated estimates, due to the complexity of managing the experimental studies. However, there are no recorded results, which deny our estimates for the model.

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Choi, Hojong. "Class-C Linearized Amplifier for Portable Ultrasound Instruments." Sensors 19, no. 4 (February 21, 2019): 898. http://dx.doi.org/10.3390/s19040898.

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Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. For such instruments, class-C amplifiers could be among the most efficient amplifier schemes because, compared with a linear amplifier such as a class-A amplifier, they could critically reduce direct current (DC) power consumption, thus, increasing the battery life of the instruments. However, the reduced output voltage amplitudes of class-C amplifiers could deteriorate the sensitivity of the echo signals, thereby affecting the instrument performance. Therefore, a class-C linearized amplifier was developed. To verify the capability of the class-C linearized amplifier, typical pulse-echo responses using the focused piezoelectric transducers were tested. The echo signal amplitude generated by the piezoelectric transducers when using the class-C linearized amplifier was improved (1.29 Vp-p) compared with that when using the class-C amplifier alone (0.56 Vp-p). Therefore, the class-C linearized amplifier could be a potential candidate to increase the sensitivity of echo signals while reducing the DC power consumption for portable ultrasound instruments.

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Nickel, J. G., and J. E. Schutt-Aine. "Matched coupled microstrip transistor amplifier methodology." IEEE Transactions on Advanced Packaging 26, no. 4 (November 2003): 361–67. http://dx.doi.org/10.1109/tadvp.2003.821078.

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Becker, J. A., Aiee, and J. N. Shive. "The Transistor - A New Semiconductor Amplifier." Proceedings of the IEEE 87, no. 8 (August 1999): 1389–96. http://dx.doi.org/10.1109/jproc.1999.775422.

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Eron, M., S. Lin, D. Wang, M. Schroter, and P. Kempf. "L-band carbon nanotube transistor amplifier." Electronics Letters 47, no. 4 (2011): 265. http://dx.doi.org/10.1049/el.2011.0018.

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Shivan, T., E. Kaule, M. Hossain, R. Doerner, T. Johansen, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer, and M. Rudolph. "Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology." International Journal of Microwave and Wireless Technologies 11, no. 7 (May 3, 2019): 635–44. http://dx.doi.org/10.1017/s1759078719000515.

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AbstractThis paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

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Neudeck, Philip G., David J. Spry, Liang Yu Chen, Robert S. Okojie, Glenn M. Beheim, Roger D. Meredith, and Terry L. Ferrier. "SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C." Materials Science Forum 556-557 (September 2007): 831–34. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.831.

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While there have been numerous reports of short-term transistor operation at 500 °C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 °C to be considered viable for most envisioned applications. This paper reports the development of SiC field effect transistors capable of long-term electrical operation at 500 °C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 °C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 °C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 °C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 °C electrical operation.

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Pham, Thi Thuy, Dongmin Kim, Seo-Hyeong Jeong, Junghyup Lee, and Donggu Im. "A High Efficiency Low Noise RF-to-DC Converter Employing Gm-Boosting Envelope Detector and Offset Canceled Latch Comparator." Electronics 10, no. 9 (May 2, 2021): 1078. http://dx.doi.org/10.3390/electronics10091078.

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This work presents a high efficiency RF-to-DC conversion circuit composed of an LC-CL balun-based Gm-boosting envelope detector, a low noise baseband amplifier, and an offset canceled latch comparator. It was designed to have high sensitivity with low power consumption for wake-up receiver (WuRx) applications. The proposed envelope detector is based on a fully integrated inductively degenerated common-source amplifier with a series gate inductor. The LC-CL balun circuit is merged with the core of the envelope detector by sharing the on-chip gate and source inductors. The proposed technique doubles the transconductance of the input transistor of the envelope detector without any extra power consumption because the gate and source voltage on the input transistor operates in a differential mode. This results in a higher RF-to-DC conversion gain. In order to improve the sensitivity of the wake-up radio, the DC offset of the latch comparator circuit is canceled by controlling the body bias voltage of a pair of differential input transistors through a binary-weighted current source cell. In addition, the hysteresis characteristic is implemented in order to avoid unstable operation by the large noise at the compared signal. The hysteresis window is programmable by changing the channel width of the latch transistor. The low noise baseband amplifier amplifies the output signal of the envelope detector and transfers it into the comparator circuit with low noise. For the 2.4 GHz WuRx, the proposed envelope detector with no external matching components shows the simulated conversion gain of about 16.79 V/V when the input power is around the sensitivity of −60 dBm, and this is 1.7 times higher than that of the conventional envelope detector with the same current and load. The proposed RF-to-DC conversion circuit (WuRx) achieves a sensitivity of about −65.4 dBm based on 45% to 55% duty, dissipating a power of 22 μW from a 1.2 V supply voltage.

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Ogunseye, Abiodun, and Olamide Omolara Olusanya. "Design and Simulation of a Microcontroller Based Loudspeaker Protection System Against Amplifier Direct Current (D.C) Offsets." Journal of Communications Technology, Electronics and Computer Science 8 (November 3, 2016): 12. http://dx.doi.org/10.22385/jctecs.v8i0.122.

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A number of failure mechanisms can result in the damage of loudspeakers that are directly connected to an audio power amplifier system. One of such failure modes occurs when the amplifier circuit develops an output d.c voltage, in which case, the loudspeaker coil will be damaged by overheating. D.c offset detection circuits, usually based on simple transistor circuits are normally used to protect the loudspeaker against this failure mode. However, as effective as they are, these circuits can fail in ways that can result in loudspeaker damage. In this work, a microcontroller based circuit that monitors the critical components of a loudspeaker d.c detection circuit, namely the switching transistor and the isolating relay circuit was developed. The hardware of the developed circuit was modelled with Proteus® software and its firmware was written using MikroC® software. The modelled circuit successfully detects the presence of d.c signals and also reports the states of the isolating relay and the switching transistors when these components fail.

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Li, Zhichao, Shiheng Yang, Samuel B. S. Lee, and Kiat Seng Yeo. "A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology." Electronics 9, no. 12 (December 20, 2020): 2198. http://dx.doi.org/10.3390/electronics9122198.

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For higher integration density, X-band power amplifiers (PAs) with CMOS technology have been widely discussed in recent publications. However, with reduced power supply voltage and device size, it is a great challenge to design a compact PA with high output power and power-added efficiency (PAE). In the proposed design, a 40-nm standard CMOS process is used for higher integration with other RF building blocks, compared with other CMOS PA designs with larger process node. Transistor cells are designed with neutralization capacitors to increase stability and gain performance of the PA. As a trade-off among gain, output power, and PAE, the transistor cells in driving stage and power stage are biased for class A and class AB operation, respectively. Both transistor cells consist of two transistors working in differential mode. Furthermore, transformer-based matching networks (TMNs) are used to realize a two-stage X-band CMOS PA with compact size. The PA achieves an effective conductivity (EC) of 117.5, which is among the highest in recently reported X-band PAs in CMOS technology. The PA also attains a saturated output power (Psat) of 20.7 dBm, a peak PAE of 22.4%, and a gain of 25.6 dB at the center frequency of 10 GHz under a 1 V supply in 40-nm CMOS.

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Lin, Jium-Ming, Po-Kuang Chang, and Zhong-Qing Hou. "INTEGRATING MICROARRAY PROBES AND AMPLIFIER ON AN ACTIVE RFID TAG FOR BIOSENSING AND MONITOR SYSTEM DESIGN." Biomedical Engineering: Applications, Basis and Communications 21, no. 06 (December 2009): 421–25. http://dx.doi.org/10.4015/s1016237209001556.

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This research provides a microarray bio-probe device, integrated with Thin-Film-Transistor (TFT) amplifier formed of top-gate MOS (Metal-Oxide Semiconductor) transistors on an active RFID tag, to improve the signal-to-noise (S/N) ratio and impedance matching problems. The bio-probe device can be disposed to conform to the profile of a living body's portion so as to improve the electrical contact property.

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Sotner, R., J. Jerabek, N. Herencsar, K. Vrba, A. Lahiri, and T. Dostal. "Study of Small-signal Model of Simple CMOS Amplifier with Instability Compensation of Positive Feedback Loop." Measurement Science Review 15, no. 3 (June 1, 2015): 139–51. http://dx.doi.org/10.1515/msr-2015-0021.

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AbstractThe paper deals with precise analysis of simple AC variable gain CMOS amplifier. The circuit can be used as a simple voltage follower (6 MOS transistors are required) or amplifier. The main attention of this work is focused on a small-signal model of the proposed block and effects of additional passive network leading to compensation of its instability. The continuous gain adjusting in range from 1.1 to 10 (0.8 – 20 dB and with bandwidth 4.9 - 90 MHz at 5 pF load capacitance) is possible and the proposed amplifier is suitable for implementation in systems, where lower range of gain adjusting and large dynamical range is required. Theoretical analyses are supported by PSpice simulations (TSMC 0.18 um technological models) and experimental measurements with commercially available CMOS transistor fields (ALD1106/7) also confirm the discussed behavior of the amplifier.

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Bakerenkov, A. S., V. S. Pershenkov, A. V. Solomatin, V. V. Belyakov, and V. V. Shurenkov. "Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV." Applied Mechanics and Materials 565 (June 2014): 138–41. http://dx.doi.org/10.4028/www.scientific.net/amm.565.138.

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Integrated circuits are used in electronic equipment of spaceships. Therefore, they are impacted by ionizing radiation during space mission. It leads to electronic equipment failures. At present operational amplifiers are base elements of analog electronic devices. Radiation impact leads to degradation of operational amplifiers input stages. Input bias current increasing and input offset voltage drifts are the results of ionizing radiation expose of operational amplifiers. Therefore, space application electronic equipment fails after accumulation of limit dose. It isn’t difficult to estimate radiation degradation of input bias currents of bipolar operational amplifiers, but estimation of dose dependence of input offset voltage drift is more complex issue. Schematic modeling technique based on Gummel–Poon transistor model for estimation of input offset voltage drift produced by space radiation impact was experimentally verified for LM324 operational amplifier and presented in this work. Radiation sensitive parameters of Gummel–Poon model were determined using 2N2907 bipolar pnp transistor.

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Mabrok, Mussa, Zahriladha Zakaria, and Nasrullah Saifullah. "Design of Wide-band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (October 1, 2018): 3504. http://dx.doi.org/10.11591/ijece.v8i5.pp3504-3511.

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RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power amplifier. The simulation results showed an input return loss (S11) which less than -10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1). Inter-modulation distortion is -56.919dBc which is less than -50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.

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Haldar, Devasis, Shagun Panwar, Vipul Kumar, Ayush Goswami, and Sakshi Dhawan. "Circuits for Optical Based Line of Sight Voice Communication." Bulletin of Electrical Engineering and Informatics 6, no. 1 (March 1, 2017): 76–80. http://dx.doi.org/10.11591/eei.v6i1.592.

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We present here line of sight communication between a person and his neighbour with the help of optical signal produced by a laser torch which act as a carrier. It is therefore a wireless communication and the transmission can go up to 500 meters. We used photodiode to receive the signal at the receiver. The transmitter circuit comprises condenser microphone transistor amplifier BC547 followed by an op-amp stage built around µA741. When we give a voice signal from the mike, it converts the voice signal into the electrical signal. This electrical signal is fed to IC741 (op-amp) for amplification. The gain of the op-amp can be controlled with the help of 1-mega-ohm potentiometer. The AF output from IC is coupled to the base of a class B amplifier which, in turn, modulates the signal. The transmitter uses 5V power supply. However, the 3-volt laser torch (after removal of its battery) can be directly connected to the circuit-with the body of the torch connected to the class B. The photodiode converts the optical signal into electrical signal and again this signal is amplified using IC741 and a combination of class B push pull amplifiers. The receiver circuit uses an NPN photodiode as the light sensor that is followed by a two-stage transistor preamplifier and IC741 based audio Power amplifier. The receiver does not need any complicated alignment. Just keep the photodiode oriented towards the remote transmitter’s laser point and adjust the volume control for a clear sound. The sensor must not directly face the sun.

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Schmid, Ulf, Rolf Reber, Sébastien Chartier, Kristina Widmer, Martin Oppermann, Wolfgang Heinrich, Chafik Meliani, Rüdiger Quay, and Stephan Maroldt. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.

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Schuh, Patrick, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, et al. "X-band T/R-module front-end based on GaN MMICs." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 22, 2009): 387–94. http://dx.doi.org/10.1017/s1759078709990389.

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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

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Lee, Changyeop, Gyuseong Cho, Troy Unruh, Seop Hur, and Inyong Kwon. "Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad." Sensors 20, no. 10 (May 12, 2020): 2765. http://dx.doi.org/10.3390/s20102765.

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According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

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Rodovalho, Luis Henrique, Cesar Ramos Rodrigues, and Orazio Aiello. "Self-Biased and Supply-Voltage Scalable Inverter-Based Operational Transconductance Amplifier with Improved Composite Transistors." Electronics 10, no. 8 (April 14, 2021): 935. http://dx.doi.org/10.3390/electronics10080935.

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This paper deals with a single-stage single-ended inverter-based Operational Transconductance Amplifiers (OTA) with improved composite transistors for ultra-low-voltage supplies, while maintaining a small-area, high power-efficiency and low output signal distortion. The improved composite transistor is a combination of the conventional composite transistor and forward-body-biasing to further increase voltage gain. The impact of the proposed technique on performance is demonstrated through post-layout simulations referring to the TSMC 180 nm technology process. The proposed OTA achieves 54 dB differential voltage gain, 210 Hz gain–bandwidth product for a 10 pF capacitive load, with a power consumption of 273 pW with a 0.3 V power supply, and occupies an area of 1026 μm2. For a 0.6 V voltage supply, the proposed OTA improves its voltage gain to 73 dB, and achieves a 15 kHz gain–bandwidth product with a power consumption of 41 nW.

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Pirasteh, Ali, Saeed Roshani, and Sobhan Roshani. "Design of a Miniaturized Class F Power Amplifier Using Capacitor Loaded Transmission Lines." Frequenz 74, no. 3-4 (March 26, 2020): 145–52. http://dx.doi.org/10.1515/freq-2019-0180.

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AbstractIn this paper, a new method to decrease the dimensions of the microstrip structures and reducing the overall size of the class F amplifiers is presented. First, by using the PHEMT transistor with a conventional harmonic control circuit (HCC), a low-voltage class F amplifier in the L band frequency at the operating frequency of 1.75 GHz is introduced, which named primitive class F power amplifier. Then, this amplifier is optimized by using capacitor loaded transmission lines (CLTLs). The measurement results of the amplifier show that by using the CLTL structure, the overall size has been reduced 85% (0.23 λg × 0.17 λg). The maximum power-added efficiency (PAE) of the power amplifier is about 77.5 % and the power gain which has been reached to 18.33 dB. The desirable features of this power amplifier, along with its very small size, make this power amplifier a good choice to use for the global system for mobile communications.

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Siri, Mattison S., and David S. Cochran. "Development of a Design Procedure for Class E Amplifiers." MATEC Web of Conferences 223 (2018): 01016. http://dx.doi.org/10.1051/matecconf/201822301016.

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Here, the step-by-step design procedure for a Class E amplifier is presented. An existing Class E amplifier system is described using a systems architecture approach. The design decomposition for the case study is written so that Physical Solutions (PSs; equivalent to Design Parameters) are in terms of component parameters (such as frequency or capacitance). Coupling issues are found to arise given constraints on transistor use. The design decomposition is altered to reflect the case where an amplifier is required to power a specific load. A discussion of transistor failure enables a design procedure to be developed by observing path-dependent coupling. The design procedure is tested through the design of a real amplifier. The designed amplifier is built and its performance measured.

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Delahaye, J., J. Hassel, R. Lindell, M. Sillanpää, M. Paalanen, H. Seppä, and P. Hakonen. "Bloch oscillating transistor—a new mesoscopic amplifier." Physica E: Low-dimensional Systems and Nanostructures 18, no. 1-3 (May 2003): 15–16. http://dx.doi.org/10.1016/s1386-9477(02)00936-0.

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Journal articles on the topic 'Transistor amplifier'

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