Relevant bibliographies by topics / Transistor amplifiers

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Transistor amplifiers'

Author: Grafiati
Published: 4 June 2021
Last updated: 31 July 2024

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Journal articles on the topic "Transistor amplifiers"

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Jurnal, Redaksi Tim. "PERANCANGAN RANGKAIAN PENGUAT DAYA DENGAN TRANSISTOR." Sutet 7, no. 2 (November 27, 2018): 88–92. http://dx.doi.org/10.33322/sutet.v7i2.81.

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The power amplifier circuit is a circuit used to amplify or magnify input signals. The use of a transistor as an amplifier is that the current on the base is used to control the larger current given to the collector through the transistor. The small current change on the controlling base is what is called a large change in the current flowing from the collector to the emitter. The advantages of the amplifier transistors can not only amplify the signal, but these transistors can also be used as current amplifiers, voltage amplifiers and power amplifiers.
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Ferndahl, Mattias, Ted Johansson, and Herbert Zirath. "Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 19, 2009): 301–7. http://dx.doi.org/10.1017/s1759078709990316.

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The use of 130-nm CMOS for power amplifiers at 20 GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20 GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.
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Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (March 1, 2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.
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Shrivastava, Anurag, and Mohan Gupta. "Evaluation of the Core Processor Cache Memory Architecture's Performance." Journal of Futuristic Sciences and Applications 2, no. 1 (2019): 11–18. http://dx.doi.org/10.51976/jfsa.211903.

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In this study, memory architectures for single-bit caches are studied. Voltage differential sense amplifiers and charge transfer differential sense amplifiers are used to study a six-transistor static random-access memory. In a single-bit, six-transistor static random-access memory, it has been demonstrated that the voltage differential sensing amplifier uses the least power.
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Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee, and M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.
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Pashentsev V. N. "Changes in the characteristics of semiconductor structures of microwave amplifiers under the action of pulsed laser radiation." Technical Physics 67, no. 14 (2022): 2236. http://dx.doi.org/10.21883/tp.2022.14.55224.43-21.

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The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5-8 GHz and integrated amplifiers with an operating frequency range of 0.4-6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 μm and 0.53 μm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs. Keywords: laser radiation, transistor, microwave amplifier, photocurrent, current-voltage characteristic.
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Mbonane, Sandile H., and Viranjay M. Srivastava. "Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET." Materials Science Forum 1053 (February 17, 2022): 137–42. http://dx.doi.org/10.4028/p-57edxh.

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This paper presents system performance indices for a class-B power amplifier using Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It also presents a comparative analysis of three power amplifiers using different switching devices, i.e. Bipolar Junction Transistor (BJT), MOSFET, and DG MOSFET. The MOSFET used in this research work is based on Silicon for n-MOSFET and SiO2 has been used as oxide layer. These power amplifiers are also being designed and simulated to test the speed and time (taken for each of these power amplifiers) to get the output signal when an input signal is applied. A comparison of these three power amplifier circuits is taken in the tabular form to conclude which power amplifier circuit performs better regarding its switching speed and the time. Switching speed relates with the time taken to amplify the signal, which is the same as its time to amplify the signal to a specific gain. Settling time for these three types of power amplifiers have also been tested and presented for the performance of these power amplifiers.
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Xing, Yang, and Ruibing Dong. "Graphical Approach to Optimization of Maximally Efficient-Gain-Boosted Feedback Amplifiers." Electronics 12, no. 13 (June 30, 2023): 2895. http://dx.doi.org/10.3390/electronics12132895.

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It is challenging to design high-gain amplifiers near the maximum oscillation frequency (fmax) of the transistors. This paper presents a comprehensive graphical approach to maximize the gain of feedback amplifiers with maximally efficient gain (GME) conception at near-fmax frequency. The complex gain-plane and the reflection-coefficient-plane are utilized to provide clear insights into both the gain and stability states of the two-port device while boosting GME. An efficient flowchart to synthesize feedback amplifiers is given, which optimizes the GME of a two-port device while ensuring the stability. A 210 GHz power amplifier in 40 nm CMOS was designed and optimized based on the proposed approach. The feedback circuit of the transistor pushes it to become potentially unstable and boosts GME. The measured peak small-signal gain was 10.48 dB at 195.33 GHz. The measured saturation output power and large-signal gain at 210 GHz were 3.04 dBm and 7.08 dB, respectively. The presented method could facilitate terahertz amplifier design.
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Santoso, Budi, and Zainal Abidin. "KARAKTERISTIK AMPLIFIER CLASS D MENGGUNAKAN FIELD EFFECT TRANSISTOR (FET) TYPE IRF9530 DAN IRF630." Jurnal Teknika 12, no. 2 (September 20, 2020): 71. http://dx.doi.org/10.30736/jt.v13i2.470.

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In the development of power amplifiers, MOSFETs are widely used in the composition of the manufacture. As is known, MOSFETs have a longer on-off time loss compared to IGBT. The loss on the on-off time has an impact on the heat generated by the MOSFET. Class D Audio Amplifier is basically a Switching-Amplifier or Pulse Width Modulation-Amplifier. High efficiency means that it will produce low power dissipation, thus the power wasted is relatively lower when compared to class A, B or AB amplifiers. Because the class D audio amplifier can be said to be more economical because it does not require a large heatsink and a large power supply. The manufacture of the Class D power amplifier system uses a voltage of 28.5 volts DC on the final transistor IRF9530 AND IRF630 measuring the input transistors of 3.3 volts DC, 28.5 volts DC. In the test using an oscilloscope type LS 8050, 50 MHz frequency, the position of the audio input off of the amplifier has sound defects. Testing of the power amplifier is carried out when the treble on the input tone control is full db in the defective amplifier wave.
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Chen, Yuening, Kecheng Wang, and Yan Zhuang. "Current state and challenges of ECG amplifiers." Highlights in Science, Engineering and Technology 32 (February 12, 2023): 177–85. http://dx.doi.org/10.54097/hset.v32i.4988.

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This paper describes and compares three amplifiers for ECG recording, namely a four-transistor stage band-pass amplifier, a DDA-based fully differential CMOS instrumentation amplifier and an OTA amplifier using current reuse. The performance metrics of the three amplifiers are listed, their respective advantages are compared, what factors limit their disadvantages are analyzed, the current state of the art and the direction of development of the ECG amplifier are indicated, and suggestions are given for further enhancement of the ECG amp. These amplifier circuits are designed in 0.35 µm CMOS and are verified by layout followed by simulation simulations. The results show that running at 2V dc supply, the quad-transistor stage amplifier and the DDA fully differential amplifier consume 672nW, obtain at least 2uVrms of input reference noise, and obtain greater common mode rejection ratios of 86dB and 83dB, while the OTA amplifier consumes less 320nW, obtains the most 2.05uVrms of input reference noise, and obtains a smaller common-mode rejection ratio of 65dB.
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Dissertations / Theses on the topic "Transistor amplifiers"

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Overstreet, William Patton. "VHF bipolar transistor power amplifiers: measurement, modeling, and design." Diss., Virginia Polytechnic Institute and State University, 1986. http://hdl.handle.net/10919/71166.

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Widely used design techniques for radio frequency power amplifiers yield results which are approximate; the initial design is usually refined by applying trial-and-error procedures in the laboratory. More accurate design techniques are complicated in their application and have not gained acceptance by practicing engineers. A new design technique for VHF linear power amplifiers using bipolar junction transistors is presented in this report. This design technique is simple in its application but yields accurate results. The design technique is based upon a transistor model which is simple enough to be useful for design, but which is sufficiently accurate to predict performance at high frequencies. Additionally, the model yields insight into many of the processes which take place within the typical RF power transistor. The fundamental aspect of the model is the inclusion of charge storage within the transistor base. This charge storage effect gives rise to a nearly sinusoidal collector current waveform, even in a transistor which ostensibly is biased for class B or nonsaturating class C operation. Methods of predicting transistor input and output impedances are presented. A number of other topics related to power amplifier measurement and design are also included. A unique measurement approach which is ideally suited for use with power amplifiers is discussed. This measurement approach is a hybrid of the common S-parameter measurement technique and the "load-pull" procedure. Practical considerations such as amplifier stability, bias network design, and matching network topology are also included in the report.
Ph. D.
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Aurangabadkar, Nilesh Kirti Kumar. "Simulations of analog circuit building blocks based on radiation and temperature-tolerant SIC JFET Technologies." Master's thesis, Mississippi State : Mississippi State University, 2003. http://library.msstate.edu/etd/show.asp?etd=etd-05162003-114102.

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Kashif, Ahsan-Ullah. "Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-61599.

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The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. From economical point of view, a single wideband RF power module is more desirable rather than multiple narrowband PAs especially for multi-band and multi-mode operation. Therefore, device modeling has now become much more crucial for such applications. In order to reduce the device design cycle time, the researchers also heavily rely on computer aided design (CAD) tools. With improvement in CAD technology the model extraction has become more accurate and device physical structure optimization can be carried out with less number of iterations. LDMOS devices have been dominating in the communication field since last decade and are still widely used for PA design and development. This thesis deals with the optimization of RFLDMOS transistor and its evaluation in different PA classes, such as linear, switching, wideband and multi-band applications. For accurate evaluation of RF-LDMOS transistor parameters, some techniques are also developed in technology CAD (TCAD) using large signal time domain computational load-pull (CLP) methods. Initially the RF-LDMOS is studied in TCAD for the improved RF performance. The physical intrinsic structure of RF-LDMOS is provided by Infenion Technologies AG. A reduced surface field (RESURF) of low-doped drain (LDD) region is considered in detail because it plays an important role in RF-LDMOS devices to obtain high breakdown voltage (BVDS). But on the other hand, it also reduces the RF performance due to high on-resistance (Ron). The excess interface state charges at the RESURF region are introduced to reduce the Ron, which not only increases the dc drain current, but also improve the RF performance in terms of power, gain and efficiency. The important achievement is the enhancement in operating frequency up to 4 GHz. In LDD region, the effect of excess interface charges at the RESURF is also compared with dual implanted-layer of p-type and n-type. The comparison revealed that the former provides 43 % reduction in Ron with BVDS of 70 V, while the later provides 26 % reduction in Ron together with BVDS of 64 - 68 V. In the second part of my research work, computational load pull (CLP) simulation technique is used in TCAD to extract the impedances of RF-LDMOS at different frequencies under large signal operation. Flexible matching is an issue in the design of broadband or multi-band PAs. Optimum impedance of RF-LDMOS is extracted at operating frequencies of 1, 2 and 2.5 GHz in class AB PA. After this, CLP simulation technique is further developed in TCAD to study the non-linear behavior of RF devices. Through modified CLP technique, non-linear effects inside the transistor structure are studied by conventional two-tone RF signals in time domain. This is helpful to detect and understand the phenomena, which can be resolved to improve the device performance. The third order inter-modulation distortion (IMD3) of RF- LDMOS was observed at different power levels. The IMD3 of −22 dBc is obtained at 1-dB compression point (P1-dB), while at 10 dB back off the value increases to −36 dBc. These results were also verified experimentally by fabricating a linear PA. Similarly, CLP technique is developed further for the analysis of RF devices in high efficiency operation by investigating the odd harmonic effects for the design of class-F PA. RF-LDMOS can provide a power added efficiency (PAE) of 81.2 % in class-F PA at 1 GHz in TCAD simulations. The results are verified by design and fabrication of class-F PA using large signal model of the similar device in ADS. In fabrication, a PAE of 76 % is achieved.
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Smithers, Colin R. "Linear and efficient bipolar transistor RF amplifiers using envelope feedback." Thesis, University of Surrey, 1985. http://epubs.surrey.ac.uk/843097/.

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After an introduction to amplifiers in communications and an exposition of the literature specifically relevant to high linearity power amplifiers, this study investigates more thoroughly various aspects of envelope feedback as applied to Bipolar Tuned Power Amplifiers at HF and VHP. It is discovered that under the correct conditions a new mode of linear operation exists where gain compression, AM-PM conversion and input impedance are simultaneously linearised, and in this region DC-RF power efficiency is also improved. Spectral measurements are presented from an envelope feedback amplifier constructed to operate over this region. A computerised system is described for measuring accurately the gain and phase shift of the test amplifier against variation of collector supply, quiescent bias current and RF drive power. The results from these measurements are presented as 3-dimensional projections and as contour plots. Subsequently the stored data is used to re-construct two-tone spectra, which is then analysed to show contributions to the spectrum from the gain compression and AM-PM conversion mechanisms separately. Conclusions are drawn with respect to effects of bias on these two mechanisms. A mechanism has been discovered which gives a symetric spectra without requiring AM-PM conversion at the fundamental frequencies. An attempt is made to model the amplifier with a non-linear circuit transient analysis program (SPICE). Good correlation is obtained for some parameters and these results are also plotted in 3-D and in contour.
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BOSI, Gianni. "NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS." Doctoral thesis, Università degli studi di Ferrara, 2014. http://hdl.handle.net/11392/2389391.

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In recent years, electronic technologies oriented to communications went through a continuous and pressing development due to several factors. On one hand, the devel-opment of the internet network and its related information systems caused an increasing interest of the people in using devices capable of ensuring a constant connection to those services. This aspect greatly improved the wide diffusion of mobile devices and new generation technologies, such as 3G and 4G/LTE, were developed to satisfy more and more demanding requirements. On the other hand, other systems such as geolocation services (e.g., GPS and GLONASS), initially built for military purposes, are now diffused and commonly adopted by an increasing number of people. While the consumer market has given a significant boost to communication tech-nologies, other sectors have seen a tremendous development. As an example, satellite systems for Earth observation (such as the COSMO-SkyMed system for the observa-tion of the Mediterranean basin) plays today a fundamental role in the prevention and the management of natural phenomena. The aforementioned examples of communication systems exploit microwave fre-quency technologies for the transmission of large amounts of data, thanks to the availability of larger bandwidths. This necessarily implies use of high-power and high-efficiency technologies in line with the requirements of the systems where they are exploited. When these aspects are taken into account, the attention focuses on the basic ele-ment which mainly determines the performance of an electronic circuit: the transistor. New technologies based on particular semiconductors such as Gallium Arsenide (GaAs) and Gallium Nitride (GaN) are revealing themselves as great solutions for the realization of transistors with excellent performance at micro- and mm-wave frequencies. Because of their relative immaturity compared to well-assessed technologies, such as Silicon, they are of great interest in the research field, in order to identify their limitations and margins of improvement. The research activities carried out during my PhD program lie in this framework. In particular, the attention has been focused on the nonlinear modeling of transistors for microwave applications and on the study, as well as the application, of design techniques to optimize the performance of power amplifiers. In Chapter 1 nonlinear transistor modeling techniques will be briefly reviewed. Then, the attention will be focused on the problem of the low-frequency dispersion affecting new generations of electron devices, which strongly influences their dynam-ic behavior and, therefore, their performance at high frequency. To this end, a low-frequency measurement setup oriented to the analysis of this phenomenon will be described since it has been widely used throughout the research activity. Successively, two different modeling approaches, namely the compact and the behavioral ones, will be considered. Two techniques based on the setup described in Chapter 1 have been analyzed and developed in the PhD activity and will be present-ed in Chapters 2 and 3 respectively. Finally, Chapter 4 will be devoted to the design of microwave power amplifiers. In particular, the problem of identifying the optimal operating condition for an active device will be analyzed, with particular interest in the maximization of the efficiency. In this context, a recently proposed design technique, based on large-signal low-frequency measurements will be applied to obtain accurate information on the tran-sistor behavior. This technique will be also compared with conventional approaches (e.g., load pull) and validated with the realization of a prototype of a microwave power amplifier.
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Iqbal, Ahmer. "Heterojunction bipolar transistor based distributed amplifiers for fibre optic receiver front-end applications." Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734182.

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Rubio, Robert Dale. "The design, simulation and analysis of InP double heterojunction transistor for power amplifiers." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1779690361&sid=2&Fmt=2&clientId=48051&RQT=309&VName=PQD.

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Varelas, Theodoros Carleton University Dissertation Engineering Electrical. "A monolithic BiCMOS power amplifier for low power digital radio transmitter." Ottawa, 1992.

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Морозова, А. И., Е. С. Бондарева, Ю. В. Сорокопудова, and Я. Н. Колесникова. "Схемотехника приставки для электрогитары "Distortion 250"." Thesis, Сумский государственный университет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/39894.

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Целью работы стало исследование преобразования сигнала примочкой «Distortion 250» и описание этих преобразований. В процессе изготовления печатной платы проводились следующие манипуляции: разведение дорожек платы; предварительная подготовка заготовки (очистка поверхности, обезжиривание);нанесение защитного покрытия; удаление лишней меди с поверхности платы (травление); отчистка заготовки от защитного покрытия; сверление отверстий, покрытие платы флюсом, лужение. Для травления платы использовался раствор хлорного железа. Процесс травления в этом растворе занял 15 минут.
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Neethling, M. (Marthinus). "A broadband microwave limiting amplifier." Thesis, Stellenbosch : University of Stellenbosch, 2004. http://hdl.handle.net/10019.1/16406.

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Thesis (MScIng)--University of Stellenbosch, 2004.
ENGLISH ABSTRACT: Limiting amplifiers are employed in electronic warfare (EW) systems requiring a high measure of amplitude control. These EW systems employ sensitive signal processing components that are unable to accept the full dynamic range of input signals the system must face. The limiting amplifier, however, offers the unique capability of reducing the received signal spectrum to a suitable dynamic range. A typical application of the limiting amplifier is in the instantaneous frequency measurement (IFM) receiver where the limiting amplifier allows the receiver to accurately measure pulsed signals over a wide input dynamic range The aim of this study is the design and analysis of a broadband limiting amplifier. Focus is placed on the design of a socalled backbone limiting amplifier (BLA) which forms an integral part of a proposed modular design approach for realizing a design with improved input dynamic range. A designed BLA is discussed in this thesis while insight is given as to the intricacies associated with its mechanism of operation. Over its 45 dB (- 40 to + 5 dBm) input dynamic range, the designed 2-18 GHz limiting amplifier offers a typical saturated output power of 7.5 dBm while harmonic suppression of better than 8.6 dBc is achieved. The BLA design was based on an existing limiting amplifier design, the so-called baseline limiting amplifier, employing alternating amplifiers and attenuators. Evaluation of the baseline limiting amplifier design allowed for formulation of a design hypothesis for realizing the BLA design. Physical measurements on the BLA were then used to scrutinize and validate the formulated design hypothesis. The requirements for realizing the BLA design were the establishment of a thorough radio frequency (RF) amplifier design capability, an understanding of the nonlinear phenomena associated with the RF amplifier and the utilization and control thereof within the limiting amplifier. Different RF amplifier designs that were carried out are discussed in this thesis, while it is shown how they were used to further investigate important design considerations for application in the BLA design. The computer-aided design packages namely MultiMatch and Microwave Office (MWO) were successfully used in realizing the desired broadband RF amplifier designs and the eventual BLA design.
AFRIKAANSE OPSOMMING: Beperker versterkers word gebruik in elektroniese oorlogvoering (EO) stelsels waar ’n redelike mate van amplitude beheer noodsaaklik is. Sensitiewe seinverwerking komponente, wat nie die volle dinamiese bereik van intreeseine kan hanteer nie, maak deel uit van hierdie EO stelsels. Die beperker versterker bied egter die unieke eienskap om die ontvangde seinspektra te reduseer tot ’n gepaste dinamiese bereik. ’n Tipiese toepassing vir die beperker versterker is as deel van die oombliksfrekwensie- meting ontvanger waar die beperker versterker die ontvanger toelaat om akkurate meting van gepulsde seine te doen oor ’n wye intree dinamiese bereik. Die doel van hierdie studie is die ontwerp en analise van ’n wye-band beperker versterker. Fokus word geplaas op die ontwerp van ’n sogenaamde kruks beperker versterker wat ’n integrale deel uitmaak van ’n voorgestelde modulêre ontwerpsbenadering, wat ten doel het om ’n verbeterde intree dinamiese bereik daar te stel. Oor die 45 dB (- 40 tot + 5 dBm) intree dinamiese bereik, bied die ontwerpte 2-18 GHz beperker versterker ’n tipiese versadigde uittreedrywing van 7.5 dBm terwyl harmonieke onderdrukking van beter as 8.6 dBc verkry is. Die ontwerp van hierdie komponent word in hierdie tesis bespreek terwyl belangrike aspekte oor die werking daarvan uitgelig word. Die ontwerp van die kruks beperker versterker is gebaseer op ’n bestaande beperker versterker ontwerp, of sogenaamde basis ontwerp, wat gebruik maak van afwisselende versterkers en attenuators. Evaluering van die basis ontwerp het toegelaat vir die formulering van 'n ontwerpshipotese om die kruks beperker versterker te realiseer. Fisiese metings op die kruks beperker versterker is gebruik om die ontwerpshipotese krities te evalueer. Om die kruks beperker versterker te realiseer moes die nodige RF versterker ontwerpsvaardigheid daargestel word, ’n begrip vir die nie-liniêere verskynsels in die RF versterker en die gebruik en beheer daarvan in die beperker versterker moes daargestel word. Verskeie RF versterkers wat ontwerp is word in hierdie tesis bespreek, terwyl getoon word hoe hierdie ontwerpe gebruik is om belangrike ontwerpsaspekte te ondersoek wat uiteindelik toegepas is in die kruks beperker versterker ontwerp. Die ontwerpspakkette naamlik MultiMatch en Microwave Office is suksesvol gebruik vir die realisering van die nodige wye-band RF versterkers en die uiteindelike kruks beperker versterker ontwerp.
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Books on the topic "Transistor amplifiers"

1

Hood, John Linsley. Valve and transistor audio amplifiers. Oxford: Newnes, 1997.

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Carr, Joseph J. Mastering solid-state amplifiers. Blue Ridge Summit, PA: TAB Books, 1993.

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Gonzalez, Guillermo. Microwave transistor amplifiers: Analysis and design. 2nd ed. Upper Saddle River, N.J: Prentice Hall, 1997.

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Gelder, Erich. The transistor as AF-amplifier. Berlin: Siemens Aktiengesellschaft, 1988.

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Bahl, I. J. Fundamentals of RF and microwave transistor amplifiers. Hoboken, N.J: Wiley, 2009.

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Shvart͡s, N. Z. Usiliteli SVCh na polevykh tranzistorakh. Moskva: Radio i sviazʹ, 1987.

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Skinner, A. J. Long-term results of accelerated life-tests on optocoupler devices. Leatherhead, Surrey, England: ERA Technology, 1992.

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Kibakin, V. M. Osnovy teorii i rascheta tranzistornykh nizkochastotnykh usiliteleĭ moshchnosti. Moskva: "Radio i svi͡a︡zʹ", 1988.

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Amos, S. W. Principles of transistor circuits: Introduction to the design of amplifiers, receivers, and digital circuits. 9th ed. Oxford: Newnes, 2000.

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Amos, S. W. Principles of transistor circuits: Introduction to the design of amplifiers, receivers, and digital circuits. 8th ed. Oxford: Butterworth-Heinemann, 1994.

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Book chapters on the topic "Transistor amplifiers"

1

Morris, Noel M. "Transistor amplifiers." In Mastering Electronic and Electrical Calculations, 284–304. London: Macmillan Education UK, 1996. http://dx.doi.org/10.1007/978-1-349-13705-3_14.

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Ritchie, G. J. "Audio power amplifiers." In Transistor Circuit Techniques, 153–76. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-6890-6_8.

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Bartlett, Jonathan. "Transistor Voltage Amplifiers." In Electronics for Beginners, 375–90. Berkeley, CA: Apress, 2020. http://dx.doi.org/10.1007/978-1-4842-5979-5_25.

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Schubert, Thomas F., and Ernest M. Kim. "Multiple-Transistor Amplifiers." In Fundamentals of Electronics Book 2, 423–510. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-79876-4_2.

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Siu, Christopher. "Single-Transistor Amplifiers." In Electronic Devices, Circuits, and Applications, 85–120. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_6.

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Asadi, Farzin. "MOSFET Transistor Amplifiers." In Analog Electronic Circuits Laboratory Manual, 79–86. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-25122-1_3.

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Asadi, Farzin. "Transistor Feedback Amplifiers." In Analog Electronic Circuits Laboratory Manual, 99–103. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-25122-1_5.

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Wu, Keng C. "Operational Amplifiers." In Transistor Circuits for Spacecraft Power System, 60–96. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-1081-9_3.

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Ritchie, G. J. "Introduction to amplifiers and biasing." In Transistor Circuit Techniques, 26–42. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-6890-6_2.

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Patrick, Dale R., Stephen W. Fardo, Ray E. Richardson, and Vigyan (Vigs) Chandra. "Field-Effect Transistor Amplifiers." In Electronic Devices and Circuit Fundamentals, 333–50. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003393139-9.

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Conference papers on the topic "Transistor amplifiers"

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Kovalev, I. V., and V. V. Losev. "On the issue of researching power electronics elements as the basis for constructing analog regulators." In III All-Russian (national) scientific conference with international participation “Russian science, innovation, education”. Krasoyarsk Science & Technology City Hall, 2024. http://dx.doi.org/10.47813/rosnio-iii.2024.2008.

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The article discusses the issues of studying power electronics elements as the basis for the formation of analogue automatic control systems. Operational amplifiers are characterized as high-performance elements on the basis of which the basic circuits of analogue regulators (P-, I-, PI-, PD-, PID-regulators) can be built. Let us give an example of a functional diagram of a second-order linear system and its equivalent - a circuit implementation using analog elements. A diagram of the simplest version of an operational amplifier using three transistors is presented, and the concept of an amplifier stage is revealed. An example of constructing an amplifier circuit based on a bipolar transistor is considered, and the output characteristics are given.
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Lo, D. C. W., Y. K. Chung, and S. R. Forrest. "Monolithically Integrated In0.53Ga0.47As Voltage-Tunable Transimpedance Amplifier." In Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/ipr.1990.pd6.

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Transimpedance amplifiers provide a high dynamic range and wide bandwidth over that obtained using high impedance amplifiers.1 However, most InP-based integrated optical receivers demonstrated today use high impedance amplifiers. This is because the integrated high-impedance amplifiers are easy to characterize. Another reason is due to the relatively low transimpedance observed for the integrated transimpedance amplifiers, which is attributed to the low value of the integrated feedback resistor.2 The integrated resistor is commonly fabricated using the FET channel layer because of its simplicity for integration with other FETs in the circuit. However, such resistors with a high value of resistance consume a large area which can result in a large parasitic shunt capacitance and inductance. Here we describe an In0.53Ga0.47As JFET transimpedance amplifier, which consists of a common source inverter stage, a level-shift buffer stage, and a narrow-gate transistor3 (5µm wide and 30µm long) as an active feedback resistor. The output resistance of the narrow-gate transistor operated in its linear region can be dynamically tuned over a wide range. Moreover, the device can be made very small to reduce parasitic capacitance and inductance.
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Kashif, A., C. Svensson, and Q. Wahab. "High Power LDMOS Transistor for RF-Amplifiers." In 2007 International Bhurban Conference on Applied Sciences & Technology. IEEE, 2007. http://dx.doi.org/10.1109/ibcast.2007.4379896.

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Williams, Wyman L., Dayalan P. Kasilingam, and David B. Rutledge. "Progress in quasi-optical transistor power amplifiers." In 1985 Tenth International Conference on Infrared and Millimeter Waves. IEEE, 1985. http://dx.doi.org/10.1109/irmm.1985.9126564.

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Movshovich, R., B. Yurke, P. G. Kaminsky, A. D. Smith, A. H. Silver, and R. W. Simon. "Quantum noise squeezing at microwave frequencies." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fbb2.

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We report the observation of zero-point noise squeezing by means of a Josephson- junction parametric amplifier, which has been used previously to squeeze 4.2 K thermal noise1. To observe quantum noise squeezing, a number of improvements were made on the apparatus; these include the in stallation of two low-noise cryogenic high- electron-mobility-transistor (HEMT) amplifiers, which boosted the detector sensitivity an order of magnitude to 215 K. The Josephson- junction parametric amplifier was cooled to 30 mK and was operated in the degenerate mode with the signal carrier frequency at 19.16 GHz. At this frequency the vacuum noise floor is hv/2k = 0.46 K. In the deamplified quadrature a drop in the noise of 0.223 K was observed relative to the pump-off noise floor. The pump-off noise floor was established to be within 3.4 + 2.0% of the vacuum noise floor by varying the temperature of the cold termination at the parametric amplifier's input from 30 mK to 1K. A probe signal at the input of the first HEMT amplifier was used to establish that the detector system saturation was less than 7 × 10−4 dB. We have thus observed squeezing 47% ± 8% below the vacuum noise floor.
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Montaseri, Mohammad Hassan, Janne Aikio, Timo Rahkonen, and Aarno Parssinen. "Design of Stacked-MOS Transistor mm-Wave Class C Amplifiers for Doherty Power Amplifiers." In 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). IEEE, 2018. http://dx.doi.org/10.1109/norchip.2018.8573519.

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Babak, L. I., M. V. Cherkashin, A. Yu Polyakov, K. S. Bodunov, and A. V. Dyagilev. "CAD tools for "visual" design of microwave transistor amplifiers." In 2005 15th International Crimean Conference Microwave and Telecommunication Technology. IEEE, 2005. http://dx.doi.org/10.1109/crmico.2005.1564977.

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Besson, R. J. "Phase noise figures comparison in transistor amplifiers of different types." In 10th International Conference on European Frequency and Time. IEE, 1996. http://dx.doi.org/10.1049/cp:19960093.

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Squartecchia, Michele, Tom K. Johansen, Virginio Midili, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, and Agnieszka Konczykowska. "InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers." In 2018 IEEE MTT-S Latin America Microwave Conference (LAMC). IEEE, 2018. http://dx.doi.org/10.1109/lamc.2018.8699026.

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Limsaengruchi, Surachai, Rardchawadee Silapunt, and Danai Torrungrueng. "Design and implementation of microwave transistor amplifiers using two-section CCITLs." In 2014 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting. IEEE, 2014. http://dx.doi.org/10.1109/aps.2014.6905172.

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Reports on the topic "Transistor amplifiers"

1

Chin, Matthew, and Stephen Kilpatrick. Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs). Fort Belvoir, VA: Defense Technical Information Center, April 2010. http://dx.doi.org/10.21236/ada517899.

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Palmour, John W. Development of 6H-SiC CMOS Transistors for Insertion into a 350 deg C Operational Amplifier. Fort Belvoir, VA: Defense Technical Information Center, May 1992. http://dx.doi.org/10.21236/ada251339.

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Palmour, John W. Development of 6H-SiC CMOS Transistors for Insertion into a 350 deg C Operational Amplifier. Fort Belvoir, VA: Defense Technical Information Center, July 1992. http://dx.doi.org/10.21236/ada253760.

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