Journal articles: 'Transistor amplifiers'

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Jurnal, Redaksi Tim. "PERANCANGAN RANGKAIAN PENGUAT DAYA DENGAN TRANSISTOR." Sutet 7, no. 2 (November 27, 2018): 88–92. http://dx.doi.org/10.33322/sutet.v7i2.81.

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The power amplifier circuit is a circuit used to amplify or magnify input signals. The use of a transistor as an amplifier is that the current on the base is used to control the larger current given to the collector through the transistor. The small current change on the controlling base is what is called a large change in the current flowing from the collector to the emitter. The advantages of the amplifier transistors can not only amplify the signal, but these transistors can also be used as current amplifiers, voltage amplifiers and power amplifiers.

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Ferndahl, Mattias, Ted Johansson, and Herbert Zirath. "Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 19, 2009): 301–7. http://dx.doi.org/10.1017/s1759078709990316.

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The use of 130-nm CMOS for power amplifiers at 20 GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20 GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.

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Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (March 1, 2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.

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Shrivastava, Anurag, and Mohan Gupta. "Evaluation of the Core Processor Cache Memory Architecture's Performance." Journal of Futuristic Sciences and Applications 2, no. 1 (2019): 11–18. http://dx.doi.org/10.51976/jfsa.211903.

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In this study, memory architectures for single-bit caches are studied. Voltage differential sense amplifiers and charge transfer differential sense amplifiers are used to study a six-transistor static random-access memory. In a single-bit, six-transistor static random-access memory, it has been demonstrated that the voltage differential sensing amplifier uses the least power.

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Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee, and M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.

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Pashentsev V. N. "Changes in the characteristics of semiconductor structures of microwave amplifiers under the action of pulsed laser radiation." Technical Physics 67, no. 14 (2022): 2236. http://dx.doi.org/10.21883/tp.2022.14.55224.43-21.

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The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5-8 GHz and integrated amplifiers with an operating frequency range of 0.4-6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 μm and 0.53 μm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs. Keywords: laser radiation, transistor, microwave amplifier, photocurrent, current-voltage characteristic.

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Mbonane, Sandile H., and Viranjay M. Srivastava. "Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET." Materials Science Forum 1053 (February 17, 2022): 137–42. http://dx.doi.org/10.4028/p-57edxh.

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This paper presents system performance indices for a class-B power amplifier using Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It also presents a comparative analysis of three power amplifiers using different switching devices, i.e. Bipolar Junction Transistor (BJT), MOSFET, and DG MOSFET. The MOSFET used in this research work is based on Silicon for n-MOSFET and SiO2 has been used as oxide layer. These power amplifiers are also being designed and simulated to test the speed and time (taken for each of these power amplifiers) to get the output signal when an input signal is applied. A comparison of these three power amplifier circuits is taken in the tabular form to conclude which power amplifier circuit performs better regarding its switching speed and the time. Switching speed relates with the time taken to amplify the signal, which is the same as its time to amplify the signal to a specific gain. Settling time for these three types of power amplifiers have also been tested and presented for the performance of these power amplifiers.

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Xing, Yang, and Ruibing Dong. "Graphical Approach to Optimization of Maximally Efficient-Gain-Boosted Feedback Amplifiers." Electronics 12, no. 13 (June 30, 2023): 2895. http://dx.doi.org/10.3390/electronics12132895.

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It is challenging to design high-gain amplifiers near the maximum oscillation frequency (fmax) of the transistors. This paper presents a comprehensive graphical approach to maximize the gain of feedback amplifiers with maximally efficient gain (GME) conception at near-fmax frequency. The complex gain-plane and the reflection-coefficient-plane are utilized to provide clear insights into both the gain and stability states of the two-port device while boosting GME. An efficient flowchart to synthesize feedback amplifiers is given, which optimizes the GME of a two-port device while ensuring the stability. A 210 GHz power amplifier in 40 nm CMOS was designed and optimized based on the proposed approach. The feedback circuit of the transistor pushes it to become potentially unstable and boosts GME. The measured peak small-signal gain was 10.48 dB at 195.33 GHz. The measured saturation output power and large-signal gain at 210 GHz were 3.04 dBm and 7.08 dB, respectively. The presented method could facilitate terahertz amplifier design.

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Santoso, Budi, and Zainal Abidin. "KARAKTERISTIK AMPLIFIER CLASS D MENGGUNAKAN FIELD EFFECT TRANSISTOR (FET) TYPE IRF9530 DAN IRF630." Jurnal Teknika 12, no. 2 (September 20, 2020): 71. http://dx.doi.org/10.30736/jt.v13i2.470.

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In the development of power amplifiers, MOSFETs are widely used in the composition of the manufacture. As is known, MOSFETs have a longer on-off time loss compared to IGBT. The loss on the on-off time has an impact on the heat generated by the MOSFET. Class D Audio Amplifier is basically a Switching-Amplifier or Pulse Width Modulation-Amplifier. High efficiency means that it will produce low power dissipation, thus the power wasted is relatively lower when compared to class A, B or AB amplifiers. Because the class D audio amplifier can be said to be more economical because it does not require a large heatsink and a large power supply. The manufacture of the Class D power amplifier system uses a voltage of 28.5 volts DC on the final transistor IRF9530 AND IRF630 measuring the input transistors of 3.3 volts DC, 28.5 volts DC. In the test using an oscilloscope type LS 8050, 50 MHz frequency, the position of the audio input off of the amplifier has sound defects. Testing of the power amplifier is carried out when the treble on the input tone control is full db in the defective amplifier wave.

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Chen, Yuening, Kecheng Wang, and Yan Zhuang. "Current state and challenges of ECG amplifiers." Highlights in Science, Engineering and Technology 32 (February 12, 2023): 177–85. http://dx.doi.org/10.54097/hset.v32i.4988.

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This paper describes and compares three amplifiers for ECG recording, namely a four-transistor stage band-pass amplifier, a DDA-based fully differential CMOS instrumentation amplifier and an OTA amplifier using current reuse. The performance metrics of the three amplifiers are listed, their respective advantages are compared, what factors limit their disadvantages are analyzed, the current state of the art and the direction of development of the ECG amplifier are indicated, and suggestions are given for further enhancement of the ECG amp. These amplifier circuits are designed in 0.35 µm CMOS and are verified by layout followed by simulation simulations. The results show that running at 2V dc supply, the quad-transistor stage amplifier and the DDA fully differential amplifier consume 672nW, obtain at least 2uVrms of input reference noise, and obtain greater common mode rejection ratios of 86dB and 83dB, while the OTA amplifier consumes less 320nW, obtains the most 2.05uVrms of input reference noise, and obtains a smaller common-mode rejection ratio of 65dB.

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Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet, and Agnieszka Konczykowska. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (August 7, 2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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Muhamed, Mais, Fariz Abboud, and Mohamad Alhariri. "Broadband Performance of a 6W Pushpull Power Amplifier on the VHF-UHF Band." International Journal of Electronics, Communications, and Measurement Engineering 11, no. 1 (January 2022): 1–8. http://dx.doi.org/10.4018/ijecme.294892.

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In this paper, a broadband 100-700 MHz power amplifier was designed. The results of simulation are compared with the measurements,The shunt feedback of power amplifier module provides the linear and broadband frequency amplification. The push-pull topology with ferrite balun provides enhanced efficiency and high power generation along In this work a commercially available LDMOS transistor (D2003UK) is used, The amplifier can deliver 6W to a 50 ohm load and has 14dB gain.Broadband high power amplifiers are considered as key components in next generation software defined radio communication systems. In principle, application of a linear, highly efficient wide band amplifier can replace several narrow band power amplifiers, yielding reduced costs and form factor, This paper uses D2003UK a transistor to achieve a 6 Watt amplifier for broad band .

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Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (June 25, 2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

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Déchansiaud, A., R. Sommet, T. Reveyrand, D. Bouw, C. Chang, M. Camiade, F. Deborgies, and R. Quéré. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (May 24, 2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.

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Diebold, Sebastian, Ingmar Kallfass, Hermann Massler, Matthias Seelmann-Eggebert, Arnulf Leuther, Axel Tessmann, Philipp Pahl, Stefan Koch, and Oliver Ambacher. "Design and model studies for solid-state power amplification at 210 GHz." International Journal of Microwave and Wireless Technologies 3, no. 3 (April 19, 2011): 339–46. http://dx.doi.org/10.1017/s1759078711000432.

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The high millimeter-wave (mmW) frequency range offers new possibilities for high-resolution imaging and sensing as well as for high data rate wireless communication systems. The use of power amplifiers of such systems boosts the performance in terms of operating range and/or data rate. To date, however, the design of solid-state power amplifiers at frequencies about 210 GHz suffers from limited transistor model accuracy, resulting in significant deviation of simulation and measurement. This causes cost and time consuming re-design iterations, and it obstructs the possibility of design optimization ultimately leading to moderate results. For verification of the small-signal behavior of our in-house large-signal transistor model, S-parameter measurements were taken from DC to 220 GHz on pre-matched transistors. The large-signal behavior of the transistor models was verified by power measurements at 210 GHz. After model modification, based on process control monitor (PCM) measurement data, the large-signal model was found to match the measurements well. A transistor model was designed containing the statistical information of the PCM data. This allows for non-linear spread analysis and reliable load-pull simulations for obtaining the highest available circuit performance. An experimental determination of the most suitable transistor geometry (i.e. number of gate fingers and gate width) and transistor bias was taken on 100 nm gate length metamorphic high electron mobility transistor (mHEMT) transistors. The most suitable combination of number of fingers, gate width and bias for obtaining maximum gain, maximum output power, and maximum power added efficiency (PAE) at a given frequency was determined.

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Пашенцев, В. Н. "Изменение характеристик полупроводниковых структур СВЧ-усилителей под воздействием импульсного лазерного излучения." Журнал технической физики 91, no. 11 (2021): 1715. http://dx.doi.org/10.21883/jtf.2021.11.51533.43-21.

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The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5–8 GHz and integrated amplifiers with an operating frequency range of 0.4–6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 µm and 0.53 µm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs.

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Modzelewski, Juliusz, and Mirosław Mikołajewski. "High-Frequency Power Amplitude Modulators with Class-E Tuned Amplifiers." Journal of Telecommunications and Information Technology, no. 4 (June 26, 2023): 79–86. http://dx.doi.org/10.26636/jtit.2008.4.903.

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A high-frequency power amplifier used in a drain amplitude modulator must have linear dependence of output HF voltage Vo versus its supply voltage VDD. This condition essential for obtaining low-level envelope distortions is met by a theoretical class-E amplifier with a linear shunt capacitance of the switch. In this paper the influence of non-linear output capacitance of the transistor in the class-E amplifier on its Vo(VDD) characteristic is analyzed using PSPICE simulations of the amplifiers operating at frequencies 0.5 MHz, 5 MHz and 7 MHz. These simulations have proven that distortions of theVo(VDD) characteristic caused by non-linear output capacitance of the transistor are only slight for all analyzed amplifiers, even for the 7 MHz amplifier without the external (linear) shunt capacitance. In contrast, the decrease of power efficiency of the class-E amplifier resulting from this effect can be significant even by 40%

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Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (October 8, 2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a comparator. One input is driven by an incoming audio signal, and the other by a triangle wave or a sawtooth wave at the required switching frequency. The frequency of a triangular or sawtooth wave must be higher than the audio input. MOSFET transistors work in a complementary manner that operates as a switch. Triangle waves are usually generated by square waves fed to the integrator circuit. So the main part of processing audio signals into PWM (Pulse Width Modulation) is the integrator and comparator. In this paper, we will discuss the work of a class D amplifier system using the summing integrator method as its main part.

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Mazur, Vladimir, Elena Golovkova, and Egor Anufriev. "APPLICATION OF THE EVERYCIRCUIT PROGRAM ON THE DISCIPLINE «CIRCUIT DESIGN» FOR BUILDING TRANSISTOR AMPLIFIERS." Scientific Papers Collection of the Angarsk State Technical University 2022, no. 1 (June 17, 2022): 39–43. http://dx.doi.org/10.36629/2686-7788-2022-1-39-43.

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The application of the program of technical simulation EveryCircuit is provided for modeling electronic circuits, in relation to a large circuit of the operation of transistor amplifiers within the discipline «Circuit Engineering». The program allows you to more clearly establish the principle of operation of the developed amplifier circuit and allow setting the negative operating mode of the tran-sistor. Examples of using programs are given and the setting of a transistor amplifier is clearly imple-mented

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Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

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Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

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Modzelewski, Juliusz, and Katarzyna Kulma. "An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers." Archives of Electrical Engineering 61, no. 2 (June 1, 2012): 221–37. http://dx.doi.org/10.2478/v10171-012-0019-x.

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An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers In the paper an improved method of calculation of the inductance and capacitances in the π1 circuit for Class A, AB, B, and C resonant power amplifiers is presented. This method is based on an assumption that the quality factor of the inductor is finite and the capacitors are lossless. The input parameters for calculations are the amplifier load resistance, the transistor load resistance, the quality factor of the inductor, the loaded quality factor of the designed circuit, and the operating frequency. The presented method allows reducing the required regulation range of π1 circuits elements in built resonant amplifiers as compared to the traditional calculation methods assuming lossless capacitors and inductor. This advantage is important, in particular, for long- and medium-wave transistor power amplifiers, where capacitances in π1 circuits are high comparing to typical trimming capacitors.

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Bakerenkov, A. S., V. S. Pershenkov, A. V. Solomatin, V. V. Belyakov, and V. V. Shurenkov. "Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV." Applied Mechanics and Materials 565 (June 2014): 138–41. http://dx.doi.org/10.4028/www.scientific.net/amm.565.138.

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Integrated circuits are used in electronic equipment of spaceships. Therefore, they are impacted by ionizing radiation during space mission. It leads to electronic equipment failures. At present operational amplifiers are base elements of analog electronic devices. Radiation impact leads to degradation of operational amplifiers input stages. Input bias current increasing and input offset voltage drifts are the results of ionizing radiation expose of operational amplifiers. Therefore, space application electronic equipment fails after accumulation of limit dose. It isn’t difficult to estimate radiation degradation of input bias currents of bipolar operational amplifiers, but estimation of dose dependence of input offset voltage drift is more complex issue. Schematic modeling technique based on Gummel–Poon transistor model for estimation of input offset voltage drift produced by space radiation impact was experimentally verified for LM324 operational amplifier and presented in this work. Radiation sensitive parameters of Gummel–Poon model were determined using 2N2907 bipolar pnp transistor.

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Kumar Tiwari, Dharmendra, Narendra Kumar Verma, and Jitendra Singh Kirar. "Using Power Reduction Techniques, a Comparison of Differential and Latch Type Sense Amplifier Circuits." Journal of Futuristic Sciences and Applications 5, no. 1 (2022): 11–21. http://dx.doi.org/10.51976/jfsa.512202.

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Researchers have investigated several different sense amplifiers’ yield and other quantitative features. Amplification is required for various power-saving methods, including the sleep transistor, the sleep stack, the sleepy keeper, and others. This study aims to evaluate how much energy is consumed by the many different sense amplifier topologies. Simulations have shown that adopting a sleep transistor approach can significantly reduce the amount of power lost even while operating at 1.2V.

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Mei, Shangming, Yihua Hu, Hui Xu, and Huiqing Wen. "The Class D Audio Power Amplifier: A Review." Electronics 11, no. 19 (October 9, 2022): 3244. http://dx.doi.org/10.3390/electronics11193244.

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Class D power amplifiers, one of the most critical devices for application in sound systems, face severe challenges due to the increasing requirement of smartphones, digital television, digital sound, and other terminals. The audio power amplifier has developed from a transistor amplifier to a field-effect tube amplifier, and digital amplifiers have made significant progress in circuit technology, components, and ideological understanding. The stumbling blocks for a successful power amplifier are low power efficiency and a high distortion rate. Therefore, Class D audio amplifiers are becoming necessary for smartphones and terminals due to their power efficiency. However, the switching nature and intrinsic worst linearity of Class D amplifiers compared to linear amplifiers make it hard to dominate the market for high-quality speakers. The breakthrough arrived with the GaN device, which is appropriate for fast-switching and high-power-density power electronics switching elements compared with traditional Si devices, thus, reducing power electronic systems’ weight, power consumption, and cost. GaN devices allow Class D audio amplifiers to have high fidelity and efficiency. This paper analyzes and discusses the topological structure and characteristics and makes a judgment that Class D amplifiers based on GaN amplifiers are the future development direction of audio amplifiers.

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Prasad, S. N., Srinivas Ponnala, Sanjay Moghe, and Zhi M. Li. "Cascaded-transistor cell distributed amplifiers." Microwave and Optical Technology Letters 12, no. 3 (June 20, 1996): 163–67. http://dx.doi.org/10.1002/(sici)1098-2760(19960620)12:3<163::aid-mop12>3.0.co;2-b.

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Koryakovcev, Artyom S., Leonid I. Babak, and Andrej A. Kokolov. "Computer symbolic analysis and study of the signal characteristics of a microwave integrated transimpedance amplifier based on CMOS-transistors." Proceedings of Tomsk State University of Control Systems and Radioelectronics 26, no. 1 (2023): 7–15. http://dx.doi.org/10.21293/1818-0442-2023-26-1-7-15.

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A technique is proposed for investigating and designing microwave transimpedance amplifiers (TIAs) based on the joint use of computer symbolic analysis and CMOS-transistors' linear equivalent circuits (ECs). The technique makes it possible to analyze the influence of various schematic parameters on TIA performances using automatically generated analytical expressions as well as to obtain recommendations for amplifier design. The investigation of the influence of devices' EC elements helps to choose CMOS-transistors' constructions and sizes when designing integrated TIAs. The approach proposed is applied to the input stage of microwave common source-common drain TIA with parallel feedback. The analysis of dependences of the main TIA characteristics (transimpedance, group delay, and input/output impedances) on circuit elements and transistor parameters is performed. Also, the amplifier stability is investigated. It is shown that, in contrast to the commonly used TIA analysis based on idealized models of active elements, the proposed approach provides sufficient accuracy in calculating amplifier performances up to the frequency of 30 GHz.

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Yarmukhamedov, A., A. Zhabborov, and B. Turimbetov. "EXPERIMENTAL RESEARCH AND COMPUTER SIMULATION OF MULTI-CASCADE COMPOSITE TRANSISTORS FOR STABILIZING THE OPERATING MODE OF OUTPUT CASCADES OF RADIO ENGINEERING DEVICES." Technical science and innovation 2019, no. 1 (June 11, 2019): 33–42. http://dx.doi.org/10.51346/tstu-01.18.2.-77-0009.

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Experimental results and computer simulation of multi-stage composite transistors are presented. To study the volt - ampere characteristics of multistage composite transistors, a dialogue computer simulation program, the Delphi programming environment, has been developed. It is shown that the proposed multistage composite transistors can improve manufacturability in its industrial production. It is shown that multistage homostructure transistors according to the Darlington and Shiklai circuits operate stably at collector-emitter voltages five times higher than in the case of individual transistors. The power dissipated on the collector is 3 times higher than the rated value of the maximum permissible power of the composite transistors. It is established that the efficiency of the method of stabilizing the emitter current of a three-link homostructure transistor is 7 times higher in voltage and three orders of magnitude higher in temperature compared to a conventional composite transistor. The proposed homostructure transistors are designed to operate in terminal stages of power amplifiers, radio transmitting devices, electronic equipment of industrial and automotive electronics

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Grujic, Dusan, and Lazar Saranovac. "Broadband power amplifier limitations due to package parasitics." Serbian Journal of Electrical Engineering 12, no. 3 (2015): 275–91. http://dx.doi.org/10.2298/sjee1503275g.

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Limitations of CMOS broadband power amplifiers due to package parasitics have been explored in this paper. The constraints of power amplifier matching network, realized as a third-order Chebyshev filter, have been derived, and a new power amplifier design flow has been proposed. As an example of a proposed design flow, an UWB power amplifier has been designed. Transistor level large signal simulation results are in excellent agreement with theoretical predictions.

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Jardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 6 (February 25, 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.

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This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

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Murtianta, Budihardja, and Erlina Sari. "Penguat Jembatan dengan Untai Pembalik Fase." Elektrika 14, no. 2 (October 22, 2022): 58. http://dx.doi.org/10.26623/elektrika.v14i2.5329.

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The maximum output voltage of the audio amplifier is limited to the magnitude of the power supply voltage of the power transistor or the operational amplifier on the final amplifier. This limits the maximum power of the audio amplifier output. The way to enlarge the output power of the audio amplifier without increasing the voltage is the bridge method or bridged modes. With this method a bridge amplifier will be generated. This Bridge Amplifier is also known as Bridge-Tied Load (BTL) or Bridged Transformerless. The principle of Bridge Amplifiers is to use a pair of final amplifiers whose outputs have opposite phase each other. There are 3 ways to make a pair of power amplifiers have opposing phases: with internal modification, with an audio transformer (phase splitting audio input transformer) and with a simple active phase reversal splitter circuit). This paper will discuss Bridge Amplifiers with simple phase inverting circuits. A pair of audio power amplifiers using two TDA2050 chips which are operated at ± 19 Volt supply voltage. The phase inverting circuit using IC TL072. Sinusoidal signal with an amplitude of 200 mVp and a frequency of 1 KHz is used as an input signal. The results to be observed and measured are gain, input, output and bandwidth of the bridged amplifier compared to the usual amplifier

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Maralani, A., Michael S. Mazzola, David C. Sheridan, Igor Sankin, and Volodymyr Bondarenko. "Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design." Materials Science Forum 615-617 (March 2009): 915–18. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.915.

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The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes available in silicon. However, analogous circuits have been the subject of research in Silicon Carbide (SiC). Among SiC devices, 4H-SiC Lateral-Trench JFET (LTJFET) transistor offers advantages and new opportunities to make affordable and reliable analog integrated circuits for harsh environment. In this paper: (1) SiC LTJFET is characterized for modeling and simulation, (2) effect of temperature variation on SiC LTJFET threshold voltage and small signal parameters are reported, (3) gain performance and small signal parameters of the basic analog circuit block, Common Source (CS) amplifier, based on the variation of the load transistors threshold voltage (Vth) are studied and analyzed, and (4) frequency and transient response of the cascoded CS amplifier (CS-Cas) are reported.

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Ilyas, Ikram, Niger Fatema, Refaya Taskin Shama, and Fahim Rahman. "Performance Evaluation of 32-nm CNT-OPAMPs in Analog Circuits: Design and Comparison of Leapfrog Filters." Advanced Materials Research 646 (January 2013): 216–21. http://dx.doi.org/10.4028/www.scientific.net/amr.646.216.

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In this paper, we have presented the design and characteristic performance evaluation of a 6-order Leapfrog Filter. First we designed the filter by using Silicon-based CMOS Operational Amplifiers (Si-OPAMPs). Then we designed the filter with Carbon Nanotube-based Operational Amplifiers (CNT-OPAMPs) using a benchmark nine-transistor Operational Amplifier (OPAMP) model with single-walled Carbon Nanotube Field-Effect Transistors (SW-CNTFETs) as primary building-blocks for 32nm technology. We compared the performance between the two and achieved higher phase margin, improved power dissipation, and significantly higher input resistance for the CNT-OPAMP based filter. Then we further evaluated the performance of the CNT-OPAMP based filter by changing the number of SWNTs used in the intrinsic channel region of the CNTFET, keeping all other design parameters the same. Our simulation-based assessment has shown a satisfactory superiority for CNT-OPAMP filter design in comparison with Si-based CMOS filter design. The results obtained suggest that the CNT-OPAMP has a promising potential for low-power, high-speed applications in both analog and mixed-signal nanoelectronic circuits.

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Cuntan, Corina, Caius Panoiu, Manuela Panoiu, Ioan Baciu, and Sergiu Mezinescu. "Using the LabVIEW Simulation Program to Design and Determine the Characteristics of Amplifiers." Chips 3, no. 2 (April 1, 2024): 69–97. http://dx.doi.org/10.3390/chips3020004.

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Because of the large number of parameters that interact in amplifier functions, determining dynamic regime parameters as well as the mode of function of amplifier stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an amplifier in various connections. The user selects the generator’s parameters, the type of connection and its parameters, as well as the load circuit characteristics. The application can determine both the stage characteristics and the Bode characteristics. The amplifier’s stability zone, as well as its gain and phase, are determined based on these characteristics. An important advantage of this application is that the design of the amplifier stage can be created starting from some parameters that the amplifier can establish, from which the values of components can be determined. In order to validate the simulation results from the LabVIEW application, the specialized program Multisim was used, as well as experimental measurements using the Electronics Explorer Board. Both Multisim and Electronics Explorer Board can determine Bode characteristics. In both simulations and experimental amplifiers, the same schemes with the same transistor were used. The application can be used for educational purposes as well as to design an amplifier’s stage to achieve specific parameters.

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Tlelo-Cuautle, Esteban, Martín Alejandro Valencia-Ponce, and Luis Gerardo de la Fraga. "Sizing CMOS Amplifiers by PSO and MOL to Improve DC Operating Point Conditions." Electronics 9, no. 6 (June 22, 2020): 1027. http://dx.doi.org/10.3390/electronics9061027.

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The sizes of the metal-oxide-semiconductor (MOS) transistors in an operational amplifier must guarantee strong direct current operating point (DCOP) conditions. This paper shows the usefulness of two population-based optimization algorithms to size transistors, namely—particle swarm optimization (PSO) and many optimizing liaisons (MOL). Both optimization algorithms link the circuit simulator SPICE to measure electrical characteristics. However, SPICE provides an output-file indicating that a transistor is in strong inversion but the DCOP can be in the limit, and it can switch to a different condition. In this manner, we highlight the application of PSO and MOL to size operational transconductance amplifiers (OTAs), which DCOP conditions are improved by the introduction of a procedure that handles constraints to ensure that the transistors are in the appropriate DCOP. The Miller and RFC-OTA are the cases of study, and their sizing is performed using UMC 180 nm CMOS technology. In both OTAs, the objective function is the maximization of the gain-bandwidth product under the main constraint of guaranteeing DCOPs to improve two figures of merit and to provide robustness to Monte Carlo simulations and PVT variations.

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Dong, Ruibing, Yiheng Song, and Yang Xing. "A 110 GHz Feedback Amplifier Design Based on Quasi-Linear Analysis." Electronics 12, no. 17 (September 4, 2023): 3725. http://dx.doi.org/10.3390/electronics12173725.

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The power gain and output power of millimeter-wave (mm-Wave) and terahertz (THz) amplifiers are critical performance metrics, particularly when the operating frequencies of amplifiers are near to the maximum oscillator frequency (fmax) of the transistor. This paper presents the design of a 110 GHz amplifier based on the quasi-linear method. The power gain can be boosted to maximum achievable gain (Gmax) using a linear, lossless, reciprocal feedback network, though this leads to a simultaneous decrease in output power. Based on quasi-linear analysis, for an amplifier with Gmax gain, when the K-factor is equal to 1, the output power is zero. To avoid the very low output power of amplifiers, a new approach is proposed to balance power gain and output power. A 110 GHz six-stage feedback amplifier was designed using the proposed approach and fabricated using 40 nm CMOS technology. The measured power gain is 26.5 dB, and the saturation output power is 13 dBm at 110 GHz.

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Evseev, Vladimir, Mikhail Ivlev, Elena Lupanova, Sergey Nikulin, Vitaliy Petrov, and Andrey Terentyev. "Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits." ITM Web of Conferences 30 (2019): 11002. http://dx.doi.org/10.1051/itmconf/20193011002.

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In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.

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Choi, Hojong. "Class-C Linearized Amplifier for Portable Ultrasound Instruments." Sensors 19, no. 4 (February 21, 2019): 898. http://dx.doi.org/10.3390/s19040898.

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Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. For such instruments, class-C amplifiers could be among the most efficient amplifier schemes because, compared with a linear amplifier such as a class-A amplifier, they could critically reduce direct current (DC) power consumption, thus, increasing the battery life of the instruments. However, the reduced output voltage amplitudes of class-C amplifiers could deteriorate the sensitivity of the echo signals, thereby affecting the instrument performance. Therefore, a class-C linearized amplifier was developed. To verify the capability of the class-C linearized amplifier, typical pulse-echo responses using the focused piezoelectric transducers were tested. The echo signal amplitude generated by the piezoelectric transducers when using the class-C linearized amplifier was improved (1.29 Vp-p) compared with that when using the class-C amplifier alone (0.56 Vp-p). Therefore, the class-C linearized amplifier could be a potential candidate to increase the sensitivity of echo signals while reducing the DC power consumption for portable ultrasound instruments.

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Schuh, Patrick, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, et al. "X-band T/R-module front-end based on GaN MMICs." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 22, 2009): 387–94. http://dx.doi.org/10.1017/s1759078709990389.

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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

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Sikarwar, Tarun, and Anurag Shrivastava. "Single Bit Architecture Low Power Cache Memory Design Analysis." Journal of Futuristic Sciences and Applications 3, no. 1 (2020): 57–63. http://dx.doi.org/10.51976/jfsa.312008.

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This paper examines voltage latch sensing amplifiers and six-transistor static RAM cells. The single-bit architecture's cache memory design has been investigated at various resistance values. Utilizing Process Corner Simulation and Monte Carlo Simulation, the stability of the design was evaluated. A single-bit static random access memory cell latch sensing amplifier architecture uses less energy as the resistance value rises.

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Wang, Chen, Yao-Wu Shi, Lan-Xiang Zhu, Li-Fei Deng, Yi-Ran Shi, and De-Min Wang. "Auto-regressive moving average parameter estimation for 1/f process under colored Gaussian noise background." Journal of Algorithms & Computational Technology 13 (January 2019): 174830261986743. http://dx.doi.org/10.1177/1748302619867439.

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Current algorithms for estimating auto-regressive moving average parameters of transistor 1/f process are usually under noiseless background. Transistor noises are measured by a non-destructive cross-spectrum measurement technique, with transistor noise first passing through dual-channel ultra-low noise amplifiers, then inputting the weak signals into data acquisition card. The data acquisition card collects the voltage signals and outputs the amplified noise for further analysis. According to our studies, the output transistor 1/f noise can be characterized more accurately as non-Gaussian α-stable distribution rather than Gaussian distribution. We define and consistently estimate the samples normalized cross-correlations of linear SαS processes, and propose a samples normalized cross-correlations-based auto-regressive moving average parameter estimation method effective in noisy environments. Simulation results of auto-regressive moving average parameter estimation exhibit good performance.

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Shukla, SachchidaNand, Syed Shamroz Arshad, Kavita Thakur, and Geetika Srivastava. "Sziklai Pair based Small signal Amplifier with bjt-mosfet Hybrid Unit at 180nm Technology." Journal of Ravishankar University (PART-B) 36, no. 2 (December 31, 2023): 41–59. http://dx.doi.org/10.52228/jrub.2023-36-2-4.

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Two circuit models of Small Signal amplifier, constituted with BJT-MOSFET hybrid unit under Sziklai pair topology are designed and analyzed using ‘PSpice’ and ‘Cadence Virtuoso and Spectre simulation tool (at GPDK 180nm technology)’ respectively. First amplifier (Circuit-1) uses PSpice user-defined model of BJT and MOSFET whereas the second amplifier (Circuit-2) consists of transistors available at GPDK 180nm technology. Circuit-1 can amplify the AC signals of 1mV-1nV range with optimum voltage gain 389.532, 137.570 current gain, 14.464MHz bandwidth and 2.43% THD. However, Circuit-2 can amplify AC signals of 0.1mV-10nV range with 164.018 voltage gain, 32.775 current gain, 11.906 MHz bandwidth, and 13.608E-6% THD. Both the proposed amplifier circuits remove narrow band problem and generate better results than earlier announced small signal Sziklai pair amplifier with BJT-MOSFET hybrid unit in respect of voltage and current gains, bandwidth, THD, and power consumption. Proposed amplifiers successfully address the problem of poor frequency response of small signal Darlington pair amplifier in higher frequency range and narrow bandwidth limitations of small-signal PNP Sziklai pair amplifier. Dependency of the proposed amplifiers at various biasing resistances and performance with temperature variation, noise variation, DC supply variation, and phase variation are also discussed herein. Proposed Circuits display strong dependency over ideal maximum forward beta ‘β’ of NPN transistor, Transconductance ‘VTO’ of P-MOS transistor and additional biasing resistances ‘RA’. Layout of Circuit-2 is found to cover 96.3898µm2 area with 11.32µm length and 8.515µm breadth. Minor percentage variation between pre-layout and post-layout simulation results of Circuit-2 validates the proposed design at GPDK 180nm technology. Monte Carlo and Process Corner analysis are also performed to test the robustness and insensitivity of Circuit-2 against mean value of the parameters and process and mismatch respectively. Performance summary of the proposed circuits and comparison with the recently reported designs shows effectiveness of the proposed circuits in terms of power gain, THD, voltage gain, current gain, input referred noise and power gain. Qualitative analysis of the proposed Circuits recommends its usability as Low Noise Amplifier in the portable RF noise measurement system.

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Shivan, T., E. Kaule, M. Hossain, R. Doerner, T. Johansen, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer, and M. Rudolph. "Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology." International Journal of Microwave and Wireless Technologies 11, no. 7 (May 3, 2019): 635–44. http://dx.doi.org/10.1017/s1759078719000515.

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AbstractThis paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

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Simmich, Sebastian, Andreas Bahr, and Robert Rieger. "Noise Efficient Integrated Amplifier Designs for Biomedical Applications." Electronics 10, no. 13 (June 23, 2021): 1522. http://dx.doi.org/10.3390/electronics10131522.

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The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2.

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Gonzalez-Garrido, M. Angeles, Jesus Grajal, Pablo Cubilla, Claudio Lanzieri, and Antonio Cetronio. "Two Broadband GaN MMIC Power Amplifiers for EW Systems." Materials Science Forum 615-617 (March 2009): 975–78. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.975.

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This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 μm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.

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Abdulkhaleq, Ahmed M., Maan A. Yahya, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, Naser Ojaroudi Parchin, Yasir I. A. Al-Yasir, and James Noras. "Recent Developments of Dual-Band Doherty Power Amplifiers for Upcoming Mobile Communications Systems." Electronics 8, no. 6 (June 6, 2019): 638. http://dx.doi.org/10.3390/electronics8060638.

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Power amplifiers in modern and future communications should be able to handle different modulation standards at different frequency bands, and in addition, to be compatible with the previous generations. This paper reviews the recent design techniques that have been used to operate dual-band amplifiers and in particular the Doherty amplifiers. Special attention is focused on the design methodologies used for power splitters, phase compensation networks, impedance inverter networks and impedance transformer networks of such power amplifier. The most important materials of the dual-band Doherty amplifier are highlighted and surveyed. The main problems and challenges covering dual-band design concepts are presented and discussed. In addition, improvement techniques to enhance such operations are also exploited. The study shows that the transistor parasitic has a great impact in the design of a dual-band amplifier, and reduction of the transforming ratio of the inverter simplifies the dual-band design. The offset line can be functionally replaced by a Π-network in dual-band design rather than T-network.

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Yaskiv, Volodymyr, and Oleg Yurchenko. "Unregulated transistor inverter for high-frequency magamp power converters." Computational Problems of Electrical Engineering 10, no. 1 (May 12, 2020): 45–50. http://dx.doi.org/10.23939/jcpee2020.01.045.

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This article sets basic requirements for an unregulated high-frequency transistor inverter designed to work with regulators on magnetic amplifiers. The process of the development of such an inverter is described and the main results of its experimental research are given.

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Choi, Hojong. "Stacked Transistor Bias Circuit of Class-B Amplifier for Portable Ultrasound Systems." Sensors 19, no. 23 (November 29, 2019): 5252. http://dx.doi.org/10.3390/s19235252.

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The performance of portable ultrasound systems is affected by the excessive heat generated by amplifiers, thereby reducing the sensitivity and resolution of the transducer devices used in ultrasound systems. Therefore, the amplifier needs to generate low amounts of heat to stabilize portable ultrasound systems. To properly control the amplifier, the related bias circuit must provide proper DC bias voltages for long time periods in ultrasound systems. To this end, a stacked transistor bias circuit was proposed to achieve a relatively constant amplifier performance irrespective of temperature variance without any cooling systems as the portable ultrasound system structure is limited. To prove the proposed concept, the performance of the gain and DC current consumption at different experimental times was measured and compared to a developed class-B amplifier with different bias circuits. The amplifier with the stacked transistor bias circuit outperformed with regard to the gain and DC current variance versus time (−0.72 dB and 0.065 A, respectively) compared to the amplifier with a typical resistor divider bias circuit (−5.27 dB and 0.237 A, respectively) after a certain time (5 min). Consequently, the proposed stacked transistor bias circuit is a useful electronic device for portable ultrasound systems with limited structure sizes because of its relatively low gain and DC current variance with respect to time.

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Mandarino, Antonio. "Quantum Thermal Amplifiers with Engineered Dissipation." Entropy 24, no. 8 (July 26, 2022): 1031. http://dx.doi.org/10.3390/e24081031.

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A three-terminal device, able to control the heat currents flowing through it, is known as a quantum thermal transistor whenever it amplifies two output currents as a response to the external source acting on its third terminal. Several efforts have been proposed in the direction of addressing different engineering options of the configuration of the system. Here, we adhere to the scheme in which such a device is implemented as a three-qubit system that interacts with three separate thermal baths. However, another interesting direction is how to engineer the thermal reservoirs to magnify the current amplification. Here, we derive a quantum dynamical equation for the evolution of the system to study the role of distinct dissipative thermal noises. We compare the amplification gain in different configurations and analyze the role of the correlations in a system exhibiting the thermal transistor effect, via measures borrowed from the quantum information theory.

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GHASEMI, OMIDREZA. "DOUBLE ZERO-POLE CANCELLATION FOR BANDWIDTH EXTENSION OF TRANSIMPEDANCE AMPLIFIERS." Journal of Circuits, Systems and Computers 21, no. 03 (May 2012): 1250021. http://dx.doi.org/10.1142/s0218126612500211.

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In this paper, double zero-pole cancellation for BandWidth (BW) extension of Transimpedance Amplifiers has been introduced. The effect of parasitic capacitances of the MOS transistor has been reduced using the mentioned approach. The process of zero-pole cancellation to extend the BW of the amplifier has been explained. To demonstrate the feasibility of the technique the transimpedance amplifier has been simulated in a well-known CMOS technology (i.e., 90 nm STMicroelectronics). It achieves 3 dB bandwidths of more than 46 GHz in the presence of 50 fF photodiode capacitance and 5 fF loading capacitance while only dissipating 4.06 mW.

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Tupitsyn, Alexander D. "Virtual measurement system for UHF-transistor amplifiers." Journal of the Russian Universities. Radioelectronics 22, no. 6 (January 7, 2020): 14–24. http://dx.doi.org/10.32603/1993-8985-2019-22-6-14-24.

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Journal articles on the topic 'Transistor amplifiers'

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