Relevant bibliographies by topics / Transistor modelling

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Transistor modelling'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Transistor modelling"

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Shuib, Umar Faruk, Khairul Anuar Mohamad, Afishah Alias, Tamer A. Tabet, Bablu K. Gosh, and Ismail Saad. "Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation." Advanced Materials Research 1107 (June 2015): 514–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.514.

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As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.
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Fischer, Th, T. Nirschl, B. Lemaitre, and D. Schmitt-Landsiedel. "Modelling of the parametric yield in decananometer SRAM-Arrays." Advances in Radio Science 4 (September 6, 2006): 281–85. http://dx.doi.org/10.5194/ars-4-281-2006.

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Abstract. In today's decananometer (90 nm, 65 nm, ...), CMOS technologies variations of device parameters play an ever more important role. Due to the demand for low leakage systems, supply voltage is decreased on one hand and the transistor threshold voltage is increased on the other hand. This reduces the overdrive voltage of the transistors and leads to decreasing read and write security margins in static memories (SRAM). In addition, smaller dimensions of the devices lead to increasing variations of the device parameters, thus mismatch effects increase. It can be shown that local variations of the transistor parameters limit the functionality of circuits stronger than variations on a global scale or hard defects. We show a method to predict the yield for a large number of SRAM devices without time consuming Monte Carlo simulations in dependence of various parameters (Vdd, temperature, technology options, transistor dimensions, ...). This helps the designer to predict the yield for various system options and transistor dimensions, to choose the optimal solution for a specific product.
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Doja, M. N., Moinuddin, and Umesh Kumar. "High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors." Active and Passive Electronic Components 22, no. 1 (1999): 51–73. http://dx.doi.org/10.1155/1999/58424.

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This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal small signal and the transient region of operations. The package uses a high frequency model non-linear circuit elements for accurate analysis. The package also uses transistor's lumped circuit model to calculate devices electrical parameters, and it also does dynamic simulation. It also includes the conventional model as a special case. Model verification has also been done by simulation.
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AFZALI-KUSHAA, A., and M. EL-NOKALI. "Modelling the MOS transistor." International Journal of Electronics 74, no. 2 (February 1993): 213–29. http://dx.doi.org/10.1080/00207219308925828.

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Ahmad, Norhawati, S. S. Jamuar, M. Mohammad Isa, Siti Salwa Mat Isa, Muhammad Mahyiddin Ramli, N. Khalid, N. I. M. Nor, Shahrir Rizal Kasjoo, Sohiful Anuar Zainol Murad, and M. Missous. "Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications." Applied Mechanics and Materials 815 (November 2015): 369–73. http://dx.doi.org/10.4028/www.scientific.net/amm.815.369.

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to operate up to frequencies of 25 GHz. These transistors models are used in the design of Low Noise Amplifiers (LNAs) using fully Monolithic Microwave Integrated Circuit (MMIC) technology.
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Daniel, M., M. Janicki, W. Wroblewski, A. Dybko, Z. Brzozka, and A. Napieralski. "Ion selective transistor modelling for behavioural simulations." Water Science and Technology 50, no. 11 (December 1, 2004): 115–23. http://dx.doi.org/10.2166/wst.2004.0679.

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Computer aided design and simulation of complex silicon microsystems oriented for environment monitoring requires efficient and accurate models of ion selective sensors, compatible with the existing behavioural simulators. This paper concerns sensors based on the back-side contact Ion Sensitive Field Effect Transistors (ISFETs). The ISFETs with silicon nitride gate are sensitive to hydrogen ion concentration. When the transistor gate is additionally covered with a special ion selective membrane, selectivity to other than hydrogen ions can be achieved. Such sensors are especially suitable for flow analysis of solutions containing various ions. The problem of ion selective sensor modelling is illustrated here on a practical example of an ammonium sensitive membrane. The membrane is investigated in the presence of some interfering ions and appropriate selectivity coefficients are determined. Then, the model of the whole sensor is created and used in subsequent electrical simulations. Providing that appropriate selectivity coefficients are known, the proposed model is applicable for any membrane, and can be straightforwardly implemented for behavioural simulation of water monitoring microsystems. The model has been already applied in a real on-line water pollution monitoring system for detection of various contaminants.
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Pronić-Rančić, Olivera, Zlatica Marinković, and Vera Marković. "Bias Dependant Noise Wave Modelling Procedure of Microwave Fets." Journal of Electrical Engineering 63, no. 2 (March 1, 2012): 120–24. http://dx.doi.org/10.2478/v10187-012-0018-6.

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Bias Dependant Noise Wave Modelling Procedure of Microwave Fets A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.
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Hedayat, Seyed Norollah, and Seyedeh Sahar Hedayat. "Quantum Current Modelling of Single Electron Transistors with N Potential Barrier." Advanced Science, Engineering and Medicine 11, no. 12 (December 1, 2019): 1261–65. http://dx.doi.org/10.1166/asem.2019.2473.

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The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.
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Górecki, Paweł, and Krzysztof Górecki. "Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account." Energies 12, no. 10 (May 18, 2019): 1894. http://dx.doi.org/10.3390/en12101894.

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In this article the problem of modelling a switching process of Insulated Gate Bipolar Transistors (IGBTs) in the SPICE software is considered. The new form of the considered transistor model is presented. The model includes controlled voltage and current sources, resistors and voltage sources. In the model, influence of temperature on dc and dynamic characteristics of the IGBT is taken into account. A detailed description of the dynamic part of this model is included in the article and some results of experimental verification are shown. Verification is performed for a transistor IRG4PC40UD by International Rectifier. The presented results of computations and measurements show clearly influence of temperature on on-time and off-time, and additionally switching energy losses are observed. Moreover, the results of investigations performed with the use of the new model are compared to the results of computations performed with classical models of the considered device given in the literature. It is proved that the new model makes it possible to obtain a better match to the results of measurements than the considered models described in the literature.
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Hien, Dinh Sy, Huynh Lam Thu Thao, and Le Hoang Minh. "Modelling transport in single electron transistor." Journal of Physics: Conference Series 187 (September 1, 2009): 012060. http://dx.doi.org/10.1088/1742-6596/187/1/012060.

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Dissertations / Theses on the topic "Transistor modelling"

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Razafindrakoto, Mirijason Richard. "Modèle hydrodynamique de transistor MOSFET et méthodes numériques, pour l'émission et la détection d'onde électromagnétique THz." Thesis, Montpellier, 2017. http://www.theses.fr/2017MONTS035/document.

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Du fait de ses propriétés intéressantes, le domaine de fréquence térahertz (THz) du spectre électromagnétique peut avoir de nombreuses applications technologiques, de l'imagerie à la spectroscopie en passant par les télécommunications. Toutefois, les contraintes technologiques empêchant l'émission et la détection efficaces de ces ondes par des systèmes conventionnels ont valu à cette partie du spectre électromagnétique le nom de gap THz. Au cours des deux dernières décennies, plusieurs solutions novatrices sont apparues. Parmi elles, l'utilisation de transistors à effet de champ s'est imposée comme une solution originale, bon marché, avec un fort potentiel d'intégration. Le mécanisme identifié fait intervenir l'interaction entre les ondes THz et des ondes de courant (dites ondes plasma) dans le canal du transistor. Le canal du transistor agit tel une cavité pour ces ondes plasma. Le dispositif peut alors se comporter de manière résonante ou non-résonante en fonction de divers paramètres. Dans ce manuscrit, nous étudions numériquement ces différents régimes à l'aide de modèles hydrodynamiques. Les modèles utilisés élargissent les phénomènes pris en compte dans de précédentes études théoriques. Les résultats portent sur la détection d'ondes THz par des transistors et dans une moindre mesure sur leur émission. Dans le régime non-résonant, nous étudions dans quelle mesure la plage de linéarité de détection peut être étendue. Dans le régime résonant, nous montrons l'existence de nouvelles fréquences de résonance, permettant d'élargir le spectre d'intérêt de ces détecteurs
Due to its interesting properties, the electromagnetic THz frequency range may lead to numerous technological applications, ranging from imaging to spectroscopy or even communications. However, technological constraints prevented the efficient emission and detection of such waves with conventional electronics, leading to the idea of the terahertz gap. In the last decades, multiple novel solutions to resolve this gap have been proposed. Amongst these, one may find the use of simple field effect transistors as the most promising one. Their production benefits from currently available CMOS technology thus drastically decreasing the fabrication cost of such a device while allowing it to be easily integrated within electronic circuits. The mechanism behind the emission and detection is the interaction between THz electromagnetic radiations and current oscillations, that is plasma waves, in the transistor's channel. This channel forms a cavity for plasma oscillations, hence, the device may act either resonantly or non-resonantly, depending on various parameters. This thesis deals with the numerical simulation of the transistor in different regimes using hydrodynamical models. These models account for multiple phenomena that have been considered in previous theoretical studies. Some theoretical results on both the emission and detection of THz radiation are presented. In the non-resonant case, we study how one can increase the linear regime of detection. In the resonant case, we show the existence of unexpected resonance frequencies, enlarging the detection spectrum of such detectors
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Pong, M. H. "Modelling and design of power transistor inverter circuits." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384522.

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Hayes, R. C. "Temperature dependance of silicon bipolar transistor D.C. parameters." Thesis, University of Liverpool, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381268.

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Tang, Yue Teng. "Advanced characterisation and modelling of SiGe HBT's." Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323798.

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Julien, Marquis C. "Bipolar transistor modelling from a power amplifier designer's perspective." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq22121.pdf.

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Julien, Marquis C. (Marquis Christian) Carleton University Dissertation Engineering Electronics. "Bipolar transistor modelling from a power amplifier designer's perspective." Ottawa, 1997.

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Tian, Jing. "Theory, modelling and implementation of graphene field-effect transistor." Thesis, Queen Mary, University of London, 2017. http://qmro.qmul.ac.uk/xmlui/handle/123456789/31870.

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Two-dimensional materials with atomic thickness have attracted a lot of attention from researchers worldwide due to their excellent electronic and optical properties. As the silicon technology is approaching its limit, graphene with ultrahigh carrier mobility and ultralow resistivity shows the potential as channel material for novel high speed transistor beyond silicon. This thesis summarises my Ph.D. work including the theory and modelling of graphene field-effect transistors (GFETs) as well as their potential RF applications. The introduction and review of existing graphene transistors are presented. Multiscale modelling approaches for graphene devices are also introduced. A novel analytical GFET model based on the drift-diffusion transport theory is then developed for RF/microwave circuit analysis. Since the electrons and holes have different mobility variations against the channel potential in graphene, the ambipolar GFET cannot be modelled with constant carrier mobility. A new carrier mobility function, which enables the accurate modelling of the ambipolar property of GFET, is hence developed for this purpose. The new model takes into account the carrier mobility variation against the bias voltage as well as the mobility difference between electrons and holes. It is proved to be more accurate for the DC current calculation. The model has been written in Verilog-A language and can be import into commercial software such as Keysight ADS for circuit simulation. In addition, based on the proposed model two GFET non-Foster circuits (NFCs) are conducted. As a negative impedance element, NFCs find their applications in impedance matching of electrically small antennas and bandwidth improvement of metasurfaces. One of the NFCs studied in this thesis is based on the Linvill's technique in which a pair of identical GFETs is used while the other circuit utilises the negative resistance of a single GFET. The stability analysis of NFCs is also presented. Finally, a high impedance surface loaded with proposed NFCs is also studied, demonstrating significant bandwidth enhancement.
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Cheng, Xiang. "TFTs circuit simulation models and analogue building block designs." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/271853.

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Building functional thin-film-transistor (TFT) circuits is crucial for applications such as wearable, implantable and transparent electronics. Therefore, developing a compact model of an emerging semiconductor material for accurate circuit simulation is the most fundamental requirement for circuit design. Further, unique analogue building blocks are needed due to the specific properties and non-idealities of TFTs. This dissertation reviews the major developments in thin-film transistor (TFT) modelling for the computer-aided design (CAD) and simulation of circuits and systems. Following the progress in recent years on oxide TFTs, we have successfully developed a Verilog-AMS model called the CAMCAS model, which supports computer-aided circuit simulation of oxide-TFTs, with the potential to be extended to other types of TFT technology families. For analogue applications, an accurate small signal model for thin film transistors (TFTs) is presented taking into account non-idealities such as contact resistance, parasitic capacitance, and threshold voltage shift to exhibit higher accuracy in comparison with the adapted CMOS model. The model is used to extract the zeros and poles of the frequency response in analogue circuits. In particular, we consider the importance of device-circuit interactions (DCI) when designing thin film transistor circuits and systems and subsequently examine temperature- and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are reviewed to show examples of how DCI is considered in the design of AMOLED displays. Based on these design considerations, analogue building blocks including voltage and current references and differential amplifier stages have been designed to expand the analogue library specifically for TFT circuit design. The $V_T$ shift problem has been compensated based on unique circuit structures. For a future generation of application, where ultra low power consumption is a critical requirement, we investigate the TFT’s subthreshold operation through examining several figures of merit including intrinsic gain ($A_i$), transconductance efficiency ($g_m/I_{DS}$) and cut-off frequency ($f_T$). Here, we consider design sensitivity for biasing circuitry and the impact of device variations on low power circuit behaviour.
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Mawby, P. A. "Characterisation and fabrication of heterojunction bipolar transistors." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383334.

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Adachi, Kazuhiro. "Simulation and modelling of power devices based on 4H silicon carbide." Thesis, University of Newcastle Upon Tyne, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273406.

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Books on the topic "Transistor modelling"

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Graaff, H. C. De. Compact transistor modelling for circuit design. New York: Springer-Verlag, 1990.

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de Graaff, Henk C., and François M. Klaassen. Compact Transistor Modelling for Circuit Design. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-9043-2.

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Graaff, Henk C. Compact Transistor Modelling for Circuit Design. Vienna: Springer Vienna, 1990.

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Xavier, Bernard Anthony. Analysis & modelling of gallium arsenide heterojunction bipolar transistor mixers. Uxbridge: Brunel University, 1993.

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6550-7.

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Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.

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High-frequency bipolar transistors: Physics, modelling, applications. Berlin: Springer, 2003.

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Al-Khaerow, Akram Rashad Ahmed. Physical modelling of bipolar transistors for CAD of VLSI. Birmingham: University of Birmingham, 1989.

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Norton, Mark E. Nonlinear modelling of GaAs HBTs applied to spectral regrowth analysis of power amplifiers. Dublin: University College Dublin, 1997.

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Gao, Jianjun. Heterojunction bipolar transistors for circuit design: Microwave modelling and parameter extraction. Singapore: John Wiley and Sons, Inc., 2015.

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Book chapters on the topic "Transistor modelling"

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SCHREURS, DOMINIQUE. "Modelling using high-frequency measurements." In TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN, 97–119. Dordrecht: Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4556-5_4.

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Biondi, Tonio. "Modelling The Bipolar Transistor Using Multibias S Parameters Sets." In Microelectronics and Microsystems, 139–83. London: Springer London, 2000. http://dx.doi.org/10.1007/978-1-4471-0671-5_7.

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Kumar, C. H. Pavan, and K. Sivani. "Modelling of Tunnel Field-Effect Transistor for Ultra-low-power Applications." In Lecture Notes in Networks and Systems, 609–17. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8198-9_63.

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. "Basic Concept of Field-Effect Transistors." In Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, 9–43. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6550-7_2.

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Busatto, G., and G. F. Vitale. "Physical Modelling of Bipolar Mode Field Effect Transistor (BMFET) for Circuit Simulation." In ESSDERC ’89, 427–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_87.

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. "Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor." In Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, 65–83. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6550-7_4.

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. "Introduction on Scaling Issues of Conventional Semiconductors." In Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, 1–7. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6550-7_1.

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. "Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Transistors." In Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, 45–64. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6550-7_3.

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Amiri, Iraj Sadegh, and Mahdiar Ghadiry. "Conclusion and Future Works on High-Voltage Application of Graphene." In Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, 85–86. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6550-7_5.

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Murali, Krishna M., and Prasantha R. Mudimela. "Modelling of inverters using MoS2 based transistors." In Intelligent Circuits and Systems, 552–57. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003129103-83.

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Conference papers on the topic "Transistor modelling"

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Moiseev, Grigor. "MODELLING OF STRUCTURE BASED ON JUNCTIONLESS TRANSISTOR IN TCAD SYSTEM." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1662.silicon-2020/397-399.

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The purpose of this work is to synthesize a transistor with a lower leakage current. The paper describes a new type of transistors that do not contain p-n junctions - junctionless transistors. The physical principles of operation of such devices are briefly stated. On the basis of the junctionless transistor, a structure is proposed that has a lower leakage current as compared to the junctionless transistors. Numerical modeling of the proposed structure in the TCAD system is carried out. The current-voltage characteristic (CVC) of the proposed structure is calculated. It is clearly shown that the proposed structure has a lower leakage current in comparison with the leakage current of a junctionless transistor.
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Drazin, Jonathan P. V., and Andrew M. Barnard. "ECIPS/DAQ: A Transistor Modelling Environment." In Fourteenth European Solid-State Circuits Conference. IEEE, 1988. http://dx.doi.org/10.1109/esscirc.1988.5468287.

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Freundorfer, A. P., and Y. Jamani. "Interconnect modelling of coplanar HBT transistor arrays." In 1998 Symposium on Antenna Technology and Applied Electromagnetics. IEEE, 1998. http://dx.doi.org/10.1109/antem.1998.7861705.

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Schreurs, D., M. Myslinski, and H. Taher. "Large-signal behavioural modelling - from transistor to amplifier." In IET Seminar on High Efficiency Power Amplifier Design for Next Generation Wireless Applications. IEE, 2006. http://dx.doi.org/10.1049/ic:20060003.

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Saad, Ismail, Razak M. A. Lee, Razali Ismail, and Vijay K. Arora. "Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor." In 2009 Third Asia International Conference on Modelling & Simulation. IEEE, 2009. http://dx.doi.org/10.1109/ams.2009.46.

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Iqbal, A. "Modelling of the heterojunction bipolar transistor based distributed amplifier." In IEE Colloquium on Wideband Circuits, Modelling and Techniques. IEE, 1996. http://dx.doi.org/10.1049/ic:19960705.

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Mohamed, Heba N., and Soliman A. Mahmoud. "Novel Circuit Model of the Photovoltaic Modules Based on N-Channel MOS Transistor." In 2013 European Modelling Symposium (EMS). IEEE, 2013. http://dx.doi.org/10.1109/ems.2013.67.

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Hinov, Nikolay, Dimitar Arnaudov, George Kraev, and Bogdan Gilev. "Modelling of single transistor parallel ZVS DC-DC converter." In 2017 15th International Conference on Electrical Machines, Drives and Power Systems (ELMA). IEEE, 2017. http://dx.doi.org/10.1109/elma.2017.7955422.

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Sarmiento-Reyes, Arturo, Luis Hernandez-Martinez, Miguel Angel Gutierrez de Anda, and Francisco Javier Castro Gonzalez. "Modelling the single-electron transistor with piecewise linear functions." In 2009 European Conference on Circuit Theory and Design (ECCTD 2009). IEEE, 2009. http://dx.doi.org/10.1109/ecctd.2009.5274932.

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Elgomati, H. A., B. Y. Majlis, A. M. Abdul Hamid, P. M. Susthitha, and I. Ahmad. "Modelling of Process Parameters for 32nm PMOS Transistor Using Taguchi Method." In 2012 6th Asia Modelling Symposium (AMS 2012). IEEE, 2012. http://dx.doi.org/10.1109/ams.2012.22.

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