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1

Graaff, H. C. De. Compact transistor modelling for circuit design. New York: Springer-Verlag, 1990.

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2

de Graaff, Henk C., and François M. Klaassen. Compact Transistor Modelling for Circuit Design. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-9043-2.

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3

Graaff, Henk C. Compact Transistor Modelling for Circuit Design. Vienna: Springer Vienna, 1990.

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4

Xavier, Bernard Anthony. Analysis & modelling of gallium arsenide heterojunction bipolar transistor mixers. Uxbridge: Brunel University, 1993.

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5

Amiri, Iraj Sadegh, and Mahdiar Ghadiry. Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6550-7.

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6

Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.

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7

High-frequency bipolar transistors: Physics, modelling, applications. Berlin: Springer, 2003.

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8

Al-Khaerow, Akram Rashad Ahmed. Physical modelling of bipolar transistors for CAD of VLSI. Birmingham: University of Birmingham, 1989.

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9

Norton, Mark E. Nonlinear modelling of GaAs HBTs applied to spectral regrowth analysis of power amplifiers. Dublin: University College Dublin, 1997.

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10

Gao, Jianjun. Heterojunction bipolar transistors for circuit design: Microwave modelling and parameter extraction. Singapore: John Wiley and Sons, Inc., 2015.

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11

Compact Transistor Modelling For Circuit Design. Springer Verlag GmbH, 2012.

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12

Amiri, Iraj Sadegh, and Mahdiar Ghadiry. Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. Springer, 2017.

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13

Amiri, Iraj Sadegh, and Mahdiar Ghadiry. Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor. Springer, 2017.

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14

Ouslis, Chris *. An investigation of computer-aided MOS transistor modelling for analogue circuit simulation. 1988.

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15

Vishnoi, Rajat, Pratyush Pandey, and Jagadesh Kumar Mamidala. Tunnel Field-Effect Transistors: Modelling and Simulation. Wiley & Sons, Incorporated, John, 2016.

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Vishnoi, Rajat, Pratyush Pandey, and Jagadesh Kumar Mamidala. Tunnel Field-Effect Transistors: Modelling and Simulation. Wiley & Sons, Incorporated, John, 2016.

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17

Yau, Kenneth Hoi Kan. Noise modelling of silicon germanium heterojunction bipolar transistors at millimetre-wave frequencies. 2006.

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