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1

Motorola. Power MOSFET transistor data. Motorola, 1988.

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2

Motorola. Power mosfet transistor data. 4th ed. Motorola, 1989.

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3

Motorola. TMOS power MOSFET transistor device data. 6th ed. Motorola, 1996.

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4

Institution of Engineering and Technology, ed. Low power and low voltage circuit design with the FGMOS transistor. Institution of Engineering and Technology, 2006.

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5

Institution of Engineering and Technology and Knovel (Firm), eds. Low power and low voltage circuit design with the FGMOS transistor. Institution of Engineering and Technology, 2006.

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6

Taylor, B. E. Power Mosfet design. Wiley, 1993.

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7

Baliga, B. Jayant. Advanced power MOSFET concepts. Springer, 2010.

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8

Warner, R. M. MOSFET theory and design. Oxford University Press, 1999.

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9

Baliga, Jayant. Silicon RF power MOSFETs. World Scientific, 2005.

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10

Silicon RF power MOSFETS. World Scientific, 2005.

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11

Cherem, Schneider Márcio, ed. MOSFET modeling for circuit analysis and design. World Scientific, 2007.

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12

Cheng, Yuhua. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 2002.

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13

Chenming, Hu, ed. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 1999.

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14

Cheng, Yuhua. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 1999.

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15

1945-, Gowar John, ed. Power MOSFETS: Theory and applications. Wiley, 1989.

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16

Oktyabrsky, Serge, and Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. Springer, 2010.

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17

T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. Nova Science Publishers, 2008.

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18

Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Springer-Verlag, 1991.

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19

Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Springer-Verlag, 1991.

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20

Soclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Artech House, 1996.

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21

Foty, D. MOSFET modeling with SPICE: Principles and practice. Prentice Hall PTR, 1997.

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22

Maeda, Shigenobu. Teishōhi denryoku kōsoku MOSFET gijutsu: Takesshō shirikon TFT fukagata SRAM to SOI debaisu. Sipec, 2002.

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23

Mosfet modeling for VLSI simulation: Theory and practice. World Scientific, 2007.

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24

Sverdlov, Viktor. Strain-Induced Effects in Advanced MOSFETs. Springer-Verlag/Wien, 2011.

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25

Hisham, Haddara, ed. Characterization methods for submicron MOSFETs. Kluwer Academic Publishers, 1995.

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26

1952-, Chattopadhyay Swapan, and Bera L. K, eds. Strained-Si heterostructure field effect devices. Taylor & Francis, 2007.

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27

Bhattacharyya, A. B. Compact MOSFET models for VSLI design. Wiley, 2009.

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28

Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. Springer, 2011.

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29

Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. VTT Technical Research Centre of Finland, 2007.

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30

Arora, N. MOSFET models for VLSI circuit simulation: Theory and practice. Springer-Verlag, 1993.

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31

Jürgen, Mattausch Hans, and Ezaki Tatsuya, eds. The physics and modeling of MOSFETS: Surface-potential model HiSIM. World Scientific, 2008.

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32

Bufler, Fabian M. Full-band Monte Carlo simulation of nanoscale strained silicon MOSFETs. Hartung-Gorre, 2003.

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33

Wilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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34

L, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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35

L, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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36

Liou, Juin J. Analysis and design of MOSFETs: Modeling, simulation, and parameter extraction. Kluwer Academic Publishers, 1998.

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37

Suzuki, Kunihiro, ed. Bipolar Transistor and MOSFET Device Models. BENTHAM SCIENCE PUBLISHERS, 2016. http://dx.doi.org/10.2174/97816810826151160101.

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38

Rodriguez-Villegas, Esther. Low Power and Low Voltage Circuit Design with the FGMOS Transistor. Institution of Engineering & Technology, 2006.

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39

González, Mónica Liliana. Dispositivos electrónicos. Editorial de la Universidad Nacional de La Plata (EDULP), 2015. http://dx.doi.org/10.35537/10915/49424.

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Este texto presenta los fundamentos de los Dispositivos Electrónicos básicos, principio físico de funcionamiento y aplicación en circuitos simples. El Capítulo 1 trata al Diodo, dispositivo semiconductor básico, no lineal, sus características y limitaciones de funcionamiento y el estudio de modelos eléctricos equivalentes lineales que permitan utilizar técnicas de análisis de circuitos en circuitos simples. El Capítulo 2 trata al Transistor Bipolar de Unión. Extendiendo el conocimiento logrado en el estudio del Diodo se interpreta el funcionamiento físico de este dispositivo más complejo. Adem
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40

Baliga, B. Jayant. Advanced Power MOSFET Concepts. Springer, 2014.

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41

Algarra-Algarra-Novoa. Manual de Transistores y Mosfet - Tomo 1. Hasa, 2006.

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42

Cheng, Yuhua Yuhua, and Chenming Chenming Hu. MOSFET Modeling and BSIM3 User's Guide. Springer, 2013.

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43

Gimenez, Salvador Pinillos. Layout Techniques for MOSFETs. Morgan & Claypool Publishers, 2016.

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44

Gimenez, Salvador Pinillos. Layout Techniques for MOSFETs. Morgan & Claypool Publishers, 2016.

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45

Zhang, Zhiliang, and Yan-Fei Liu. High Frequency MOSFET Gate Drivers: Technologies and Applications. Institution of Engineering & Technology, 2017.

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46

Wordeman, Matthew R. Design and modeling of miniaturized MOSFETS. 1985.

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47

Wordeman, Matthew R. Design and modeling of miniaturized MOSFETS. 1986.

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48

Hu, Chenming, and Yuhua Cheng. MOSFET Modeling and BSIM3 User's Guide. Springer, 1999.

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49

Oktyabrsky, Serge, and Peide Ye. Fundamentals of III-V Semiconductor MOSFETs. Springer, 2014.

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50

Oktyabrsky, Serge, and Peide Ye. Fundamentals of III-V Semiconductor MOSFETs. Springer, 2010.

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