Relevant bibliographies by topics / Transistor switch

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Transistor switch'

Author: Grafiati
Published: 4 June 2021
Last updated: 27 July 2025

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Journal articles on the topic "Transistor switch"

1

Mishra, Brijendra, Vivek Singh Kushwah, and Rishi Sharma. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (2020): 294–300. http://dx.doi.org/10.29121/ijetmr.v5.i2.2018.659.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better
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Brijendra, Mishra *1, Singh Kushwah 1. Vivek, and Sharma 2. Rishi. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (SE) (2018): 294–300. https://doi.org/10.5281/zenodo.1247477.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better
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Torina, Elena M., Victor N. Kochemasov, and Ansar R. Safin. "Transistors for Solid-State Microwave Switches (A Review)." Journal of the Russian Universities. Radioelectronics 26, no. 3 (2023): 6–31. http://dx.doi.org/10.32603/1993-8985-2023-26-3-6-31.

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Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state
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Cao, Banglin, Zegao Wang, Xuya Xiong, Libin Gao, Jiheng Li, and Mingdong Dong. "Hysteresis-reversible MoS2 transistor." New Journal of Chemistry 45, no. 27 (2021): 12033–40. http://dx.doi.org/10.1039/d1nj01267c.

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Sulfur vacancy dominant hysteresis in MoS<sub>2</sub> transistors is observed. By decorating with Pt, the hysteresis behavior could switch from sulfur vacancy dominant to interfacial dominant, thereby realizing a hysteresis-reversible MoS<sub>2</sub> transistor.
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Rathore, Arvind Singh, Jitendra Kumar Ameta, Aayush Saxena, Garvit Paneri, and Rohit Sahu. "SMART LIGHTING SYSTEM FOR REDUCES THE ENERGY CONSUMPTION." International Journal of Technical Research & Science 9, Spl (2024): 27–35. http://dx.doi.org/10.30780/specialissue-iset-2024/011.

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- Advanced light scape controlling system is a simple yet powerful concept, which uses transistor as a switch. By using this system manual works are 100% removed. It automatically switches ON light when the sunlight goes below the visible region of our eyes. This is done by a sensor called Light Dependent Resistor (LDR) which senses the light like our eyes. It automatically switches OFF lights whenever the sunlight comes, visible to our eyes. By using this system energy consumption is also reduced because nowadays the manually operated streetlights are not switched off even when the sunlight c
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Xie, Fangqing, Maryna N. Kavalenka, Moritz Röger, et al. "Copper atomic-scale transistors." Beilstein Journal of Nanotechnology 8 (March 1, 2017): 530–38. http://dx.doi.org/10.3762/bjnano.8.57.

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We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of th
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Ichikawa, Mai, and Hiromasa Goto. "Hemoglobin–Polyaniline Composite and Electrochemical Field Effective Transistors." Journal of Composites Science 5, no. 9 (2021): 236. http://dx.doi.org/10.3390/jcs5090236.

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A composite of hemoglobin/polyaniline was prepared. The chemical structure of this obtained composite was confirmed using infrared absorption spectroscopy measurement. The luminol reaction of the composite manifested chemical emissions from the composite. Furthermore, electrochemical transistors using the composite were created. The hemoglobin/polyaniline-based electrochemical transistor could switch to external current flow via an electrochemical reaction. The color of the transistor surface changed from green to red upon applying electrochemical potential.
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Powell, Devin. "Light flips transistor switch." Nature 498, no. 7453 (2013): 149. http://dx.doi.org/10.1038/498149a.

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Sun, Shuo, Hyochul Kim, Zhouchen Luo, Glenn S. Solomon, and Edo Waks. "A single-photon switch and transistor enabled by a solid-state quantum memory." Science 361, no. 6397 (2018): 57–60. http://dx.doi.org/10.1126/science.aat3581.

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Single-photon switches and transistors generate strong photon-photon interactions that are essential for quantum circuits and networks. However, the deterministic control of an optical signal with a single photon requires strong interactions with a quantum memory, which has been challenging to achieve in a solid-state platform. We demonstrate a single-photon switch and transistor enabled by a solid-state quantum memory. Our device consists of a semiconductor spin qubit strongly coupled to a nanophotonic cavity. The spin qubit enables a single 63-picosecond gate photon to switch a signal field
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R, Chaitrashree S., Bhavana B. Raj, Spandana Y. N, and Ankitha R. "Automatic Street Light Control System." International Journal for Research in Applied Science and Engineering Technology 11, no. 6 (2023): 4593–601. http://dx.doi.org/10.22214/ijraset.2023.54486.

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Abstract: Automatic Street Light Control System is a simple yet powerful concept, which uses transistor as a switch. By using this system manual works are 100% removed. It automatically switches ON lights when the sunlight goes below the visible region of our eyes. This is done by a sensor called infrared sensor (IR) which senses the light actually like our eyes. It automatically switches OFF lights whenever the sunlight comes, visible to our eyes. By using this system energy consumption is also reduced because nowadays the manually operated street lights are not switched off even the sunlight
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Dissertations / Theses on the topic "Transistor switch"

1

Rizk, Hiba. "Conception et réalisation d'un interrupteur bidirectionnel silicium pour des applications secteur : le transistor BipAC." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30213/document.

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Ces travaux s'inscrivent dans le contexte de la gestion de l'énergie électrique dans les applications domestiques 230V - 50Hz. Le niveau de puissance visé se situe aux environs de la centaine de watts, et les structures de conversion utilisent des interrupteurs bidirectionnels bicommandables réalisés aujourd'hui à l'aide d'associations anti-série de composants de type MOS. Malgré les améliorations apportées par certains de ces dispositifs, leur coût de fabrication reste encore élevé et limite leur plus large diffusion sur ce marché partagé avec le triac à ce jour. Nous proposons une architectu
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Kah, Martin. "Transistor de type JFET en diamant controlé électro-optiquement." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT009.

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L'augmentation de la densité de population urbaine et la demande croissante d'électricité pour une production décentralisée des points de consommation, souligne la nécessité d'améliorer nos infrastructures de transport et de conversion électrique, notamment face aux défis posés par son stockage. L'hégémonie des composants à base de silicium pour l'électronique de puissance arrive à son terme aux grands bénéfices des semiconducteurs à ultra-large bande interdite, tel que le diamant, reconnu pour exceller dans ce domaine grâce à: la grande mobilité des électrons et des trous (1060-2100 cm^2/V.s
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Rosa, Junior Leomar Soares da. "Automatic generation and evaluation of transistor networks in different logic styles." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2008. http://hdl.handle.net/10183/61869.

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O projeto e o desenvolvimento de circuitos integrados é um dos mais importantes e aquecidos segmentos da indústria eletrônica da atualidade. Neste cenário, ferramentas de automação têm possibilitado aos projetistas manipular uma elevada quantidade de transistores em circuitos cada vez mais complexos, diminuindo, assim, o tempo de projeto. Em especial, ferramentas de síntese lógica têm contribuído significativamente para reduzir o ciclo de desenvolvimento. Na metodologia de projeto full-custom, cada bloco funcional tem sua geração realizada de forma manual, desde a implementação das redes de tr
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Baur, Simon Elias [Verfasser], Gerhard [Akademischer Betreuer] Rempe, Martin [Akademischer Betreuer] Stutzmann, and Charles [Akademischer Betreuer] Adams. "A Single-Photon Switch and Transistor based on Rydberg Blockade / Simon Elias Baur. Gutachter: Martin Stutzmann ; Charles Adams ; Gerhard Rempe. Betreuer: Gerhard Rempe." München : Universitätsbibliothek der TU München, 2015. http://d-nb.info/1073247910/34.

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Benboujema, Chawki Mohamed. "Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains." Thesis, Tours, 2011. http://www.theses.fr/2011TOUR4049/document.

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S’inscrivant dans le cadre de la gestion de l’énergie dans l’habitat du programme SESAME du pôle de compétitivité S2E2, l’objectif de cette thèse est d’étudier et de proposer une structure d’interrupteur commandable à l’ouverture et à la fermeture, bidirectionnel en tension et en courant et à faible perte énergétique, destiné à connecter tout type de charges sur le réseau alternatif 230V/50Hz. Il n’existe pas à l’heure actuelle de composants interrupteurs monolithiques de ce type. La première partie du mémoire présente les interrupteurs électroniques existants. La deuxième partie, traite des i
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Rossek, Sacha J. "Direct optical control of a microwave phase shifter using GaAs field-effect transistors." Thesis, Middlesex University, 1995. http://eprints.mdx.ac.uk/10682/.

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The design and analysis of a novel optical-to-microwave transducer based upon direct optical control of microwave gallium arsenide (GaAs) field-effect transistor (FET) switches is the subject of this thesis. The switch is activated by illuminating the gate depletion region of the FET device with laser light having a photon energy and wavelength appropriate to the generation of free carriers (electron-hole pairs) within GaAs. The effects of light on the DC and microwave properties of the GaAs FET are explored and analyzed to permit the characterization of the switching performance and transient
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Ren, Zheng. "Contribution au développement du transistor bipolaire à fort gain et d'un interrupteur bidirectionnel à quatre quadrants." Thesis, Tours, 2018. http://www.theses.fr/2018TOUR4031/document.

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Afin de répondre aux besoins en management efficace de l’énergie électrique dans les bâtiments intelligents, le laboratoire GREMAN a proposé une nouvelle topologie d’interrupteur bidirectionnel de 600 V nommé TBBS. Les études antérieures ont validé la bidirectionnalité en courant et en tension de cette nouvelle topologie. Les travaux de recherche menées dans cette thèse avaient pour l’objectif d’approfondir, de compléter nos connaissances sur ce nouvel interrupteur bidirectionnel ainsi que sur le transistor bipolaire à fort gain. Le premier chapitre introduit le fonctionnement principal du TBB
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Ihuel, François. "Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI." Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4043/document.

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Ces travaux traitent de la réalisation d’un prototype d’interrupteur monolithique bidirectionnel à base de transistor bipolaire. A terme, l’objectif est de développer un interrupteur intelligent à faible perte, complètement intégrable dans l’habitat. Nous nous intéressons d’abord aux composants bidirectionnels existants. Nous présentons ensuite deux transistors bipolaires bidirectionnels. Le premier à base large, de fabrication aisée. Le second, symétrique, latéral, sur substrat SOI, à base fine, verticale, autoprotégée, très novateur. Nous les comparons et optons pour le transistor latéral à
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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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Wong, T. W. "Digital synchronisation of power transistors in switch-mode." Thesis, University of Manchester, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356703.

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Books on the topic "Transistor switch"

1

Körver, Wilbert. A discrete switch-level circuit model that uses 4-valued node states. Technische Universiteit Eindhoven, 1993.

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Wikström, Mats Olaf Tobias. MOS-controlled switches for high-voltage application. Hartung-Gorre, 2001.

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J, Frasca A., and United States. National Aeronautics and Space Administration., eds. Neutron and gamma irradiation effects on power semiconductor switches. NASA, 1990.

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4

Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Switch Mode Transistor Power Amplifier for Sonar Transducers. Creative Media Partners, LLC, 2021.

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Wright, A. G. Voltage dividers. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780199565092.003.0013.

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Voltage dividers provide accelerating voltages to generate multiplier gain. Dynode voltages must remain constant and independent of the light input to maintain stable gain. The standard resistive divider never quite satisfies this requirement, although acceptable performance can be achieved by careful design. The inclusion of zener diodes improves performance but field-effect transistor (FET) circuits can provide gain stability at high mean anode currents, regardless of whether the application is pulsed or analogue. Design procedures for active and semi-active voltage dividers are presented. D
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Gelder, Erich. The Transister As a Switch (Programmed Instruction 22). Vch Pub, 1990.

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Huang, Feng-Jung. Schottky clamped MOS transistors for wireless CMOS radio frequency switch applications. 2001.

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Book chapters on the topic "Transistor switch"

1

Okada, Y., and K. Tada. "GaAs/AlGaAs Reflection-Type Optical Switch Using Heterojunction Bipolar Transistor Waveguide Structure." In Photonic Switching II. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76023-5_8.

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Cook, David. "Transistor Switches." In Robot Building for Beginners. Apress, 2015. http://dx.doi.org/10.1007/978-1-4842-1359-9_16.

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Cook, David. "Transistor Switches." In Robot Building for Beginners. Apress, 2002. http://dx.doi.org/10.1007/978-1-4302-0826-6_16.

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Cook, David. "Transistor Switches." In Robot Building for Beginners. Apress, 2009. http://dx.doi.org/10.1007/978-1-4302-2749-6_16.

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Ramshaw, R. S. "The BJT Transistor." In Power Electronics Semiconductor Switches. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-6219-8_4.

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Rincón-Mora, Gabriel Alfonso. "Field-Effect Transistors." In Switched Inductor Power IC Design. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-95899-2_2.

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Gao, Jie, Jingbin Shangguan, Yuzhen Huang, Huajian Zhang, Yuqiang Zhang, and Daqing Gao. "High Current Pulse Forming Network Switched by Insulated Gate Bipolar Transistors." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-96-1852-1_37.

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Deza, Julien, Achour Ouslimani, Agnieszka Konczykowska, Abed-Elhak Kasbari, Jean Godin, and Gwennolé Pailler. "A 55-GHz-Small-Signal-Bandwidth Switched Emitter Follower in InP Heterojunction Bipolar Transistors." In Chaos and Complex Systems. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-33914-1_59.

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Brindley, Keith. "Transistor as a switch." In Newnes Electronics Assembly Pocket Book. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-7506-0222-8.50037-5.

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"Transistor as a Switch." In Circuit Design Techniques for Non-Crystalline Semiconductors. CRC Press, 2012. http://dx.doi.org/10.1201/b12683-11.

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Conference papers on the topic "Transistor switch"

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Xiong, Juan, Xi Wang, Yuxi Zhang, Hongbin Pu, Ying Yang, and Xinmei Wang. "Optimization Design and Simulation of 1.2kV SiC Optically Controlled Transistor for Power Switch." In 2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET). IEEE, 2024. https://doi.org/10.1109/isset62871.2024.10779695.

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Monteiro, Joaquim, Tito G. Amaral, J. Fernando Silva, Sónia Pinto, and V. Fernão Pires. "Diagnosing Power Transistor Faults in Multilevel T - Type Based Nine Switch Inverter Using Center of Mass Indexes." In 2024 13th International Conference on Renewable Energy Research and Applications (ICRERA). IEEE, 2024. https://doi.org/10.1109/icrera62673.2024.10815211.

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Ye, Yongjie, Pengwei Yang, Jie Yuan, Guoxiao Cheng та Wen Wu. "DC-20 GHz High Isolation SP3T Switch in 0.13-μm CMOS using Deep-N-Well Transistors". У 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2024. http://dx.doi.org/10.1109/icmmt61774.2024.10672273.

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Cheng, Zhenbo, Chuanxiang Tang, Hao Cai, Wei Zhao, and Yuqing Chen. "Modeling the Performance of Electromagnetic Pulse Generation Circuit Based on Avalanche Transistor Switches." In 2024 Photonics & Electromagnetics Research Symposium (PIERS). IEEE, 2024. http://dx.doi.org/10.1109/piers62282.2024.10618302.

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Li, X., L. Chen, T. Yu, Y. Wang, and X. Zhang. "PIC-MCC numerical simulation of volt-ampere characteristics for microcavity plasma transistor switches." In 2024 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2024. http://dx.doi.org/10.1109/icops58192.2024.10625853.

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Martyanov, A. S., D. V. Korobatov, and E. V. Solomin. "Research of IGBT-transistor in pulse switch." In 2016 2nd International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM). IEEE, 2016. http://dx.doi.org/10.1109/icieam.2016.7911470.

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Haider, Shahzad, Ke Hu, and Song Chen. "Fine-Grained Transistor-Level QDI Asynchronous Crossbar Switch." In 2023 IEEE 36th International System-on-Chip Conference (SOCC). IEEE, 2023. http://dx.doi.org/10.1109/socc58585.2023.10257143.

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Haider, Shahzad, Junhao Liang, and Song Chen. "Efficient Transistor-Level QDI Asynchronous Switch for Neuromorphic Systems." In 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS). IEEE, 2023. http://dx.doi.org/10.1109/newcas57931.2023.10198202.

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Cheng, Bojun, Alexandros Emboras, Elias Passerini, et al. "Ultra-steep-slope transistor enabled by an atomic memristive switch." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII, edited by Wounjhang Park, André-Jean Attias, and Balaji Panchapakesan. SPIE, 2020. http://dx.doi.org/10.1117/12.2566679.

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Aripov, Kh k., D. M. Yodgorova, A. Karimov, Sh sh Yuldashev, and B. Z. Nurmukhamedov. "The Semi-Conductor Optical Switch on a Base of Field Transistor." In 2006 2nd IEEE/IFIP International Conference in Central Asia on Internet. IEEE, 2006. http://dx.doi.org/10.1109/canet.2006.279274.

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Reports on the topic "Transistor switch"

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Atcitty, Stanley. SiC-Based Transistor-Rectifier Semiconductor Switch. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1762605.

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