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Journal articles on the topic 'Transistor switch'

Author: Grafiati

Published: 4 June 2021

Last updated: 27 July 2025

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1

Mishra, Brijendra, Vivek Singh Kushwah, and Rishi Sharma. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (2020): 294–300. http://dx.doi.org/10.29121/ijetmr.v5.i2.2018.659.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better

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Brijendra, Mishra *1, Singh Kushwah 1. Vivek, and Sharma 2. Rishi. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (SE) (2018): 294–300. https://doi.org/10.5281/zenodo.1247477.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better

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3

Torina, Elena M., Victor N. Kochemasov, and Ansar R. Safin. "Transistors for Solid-State Microwave Switches (A Review)." Journal of the Russian Universities. Radioelectronics 26, no. 3 (2023): 6–31. http://dx.doi.org/10.32603/1993-8985-2023-26-3-6-31.

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Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state

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4

Cao, Banglin, Zegao Wang, Xuya Xiong, Libin Gao, Jiheng Li, and Mingdong Dong. "Hysteresis-reversible MoS2 transistor." New Journal of Chemistry 45, no. 27 (2021): 12033–40. http://dx.doi.org/10.1039/d1nj01267c.

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Sulfur vacancy dominant hysteresis in MoS<sub>2</sub> transistors is observed. By decorating with Pt, the hysteresis behavior could switch from sulfur vacancy dominant to interfacial dominant, thereby realizing a hysteresis-reversible MoS<sub>2</sub> transistor.

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Rathore, Arvind Singh, Jitendra Kumar Ameta, Aayush Saxena, Garvit Paneri, and Rohit Sahu. "SMART LIGHTING SYSTEM FOR REDUCES THE ENERGY CONSUMPTION." International Journal of Technical Research & Science 9, Spl (2024): 27–35. http://dx.doi.org/10.30780/specialissue-iset-2024/011.

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- Advanced light scape controlling system is a simple yet powerful concept, which uses transistor as a switch. By using this system manual works are 100% removed. It automatically switches ON light when the sunlight goes below the visible region of our eyes. This is done by a sensor called Light Dependent Resistor (LDR) which senses the light like our eyes. It automatically switches OFF lights whenever the sunlight comes, visible to our eyes. By using this system energy consumption is also reduced because nowadays the manually operated streetlights are not switched off even when the sunlight c

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6

Xie, Fangqing, Maryna N. Kavalenka, Moritz Röger, et al. "Copper atomic-scale transistors." Beilstein Journal of Nanotechnology 8 (March 1, 2017): 530–38. http://dx.doi.org/10.3762/bjnano.8.57.

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We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of th

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7

Ichikawa, Mai, and Hiromasa Goto. "Hemoglobin–Polyaniline Composite and Electrochemical Field Effective Transistors." Journal of Composites Science 5, no. 9 (2021): 236. http://dx.doi.org/10.3390/jcs5090236.

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A composite of hemoglobin/polyaniline was prepared. The chemical structure of this obtained composite was confirmed using infrared absorption spectroscopy measurement. The luminol reaction of the composite manifested chemical emissions from the composite. Furthermore, electrochemical transistors using the composite were created. The hemoglobin/polyaniline-based electrochemical transistor could switch to external current flow via an electrochemical reaction. The color of the transistor surface changed from green to red upon applying electrochemical potential.

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8

Powell, Devin. "Light flips transistor switch." Nature 498, no. 7453 (2013): 149. http://dx.doi.org/10.1038/498149a.

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9

Sun, Shuo, Hyochul Kim, Zhouchen Luo, Glenn S. Solomon, and Edo Waks. "A single-photon switch and transistor enabled by a solid-state quantum memory." Science 361, no. 6397 (2018): 57–60. http://dx.doi.org/10.1126/science.aat3581.

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Single-photon switches and transistors generate strong photon-photon interactions that are essential for quantum circuits and networks. However, the deterministic control of an optical signal with a single photon requires strong interactions with a quantum memory, which has been challenging to achieve in a solid-state platform. We demonstrate a single-photon switch and transistor enabled by a solid-state quantum memory. Our device consists of a semiconductor spin qubit strongly coupled to a nanophotonic cavity. The spin qubit enables a single 63-picosecond gate photon to switch a signal field

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10

R, Chaitrashree S., Bhavana B. Raj, Spandana Y. N, and Ankitha R. "Automatic Street Light Control System." International Journal for Research in Applied Science and Engineering Technology 11, no. 6 (2023): 4593–601. http://dx.doi.org/10.22214/ijraset.2023.54486.

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Abstract: Automatic Street Light Control System is a simple yet powerful concept, which uses transistor as a switch. By using this system manual works are 100% removed. It automatically switches ON lights when the sunlight goes below the visible region of our eyes. This is done by a sensor called infrared sensor (IR) which senses the light actually like our eyes. It automatically switches OFF lights whenever the sunlight comes, visible to our eyes. By using this system energy consumption is also reduced because nowadays the manually operated street lights are not switched off even the sunlight

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11

Bandyopadhyay, Supriyo. "Power Dissipation in Spintronic Devices: A General Perspective." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 168–80. http://dx.doi.org/10.1166/jnn.2007.18013.

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Champions of "spintronics" often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional 'charge based' electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim. Here, I show that no spintronic device that clones conventional electronic devices, such as field effect transistors and bipolar junction transistors, is likely to reduce power dissipation significantly. For that to happen, spin-based devices must forsake the transistor paradigm of switching states by physical mo

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12

Rahman, Rahnuma, and Supriyo Bandyopadhyay. "The Cost of Energy-Efficiency in Digital Hardware: The Trade-Off between Energy Dissipation, Energy–Delay Product and Reliability in Electronic, Magnetic and Optical Binary Switches." Applied Sciences 11, no. 12 (2021): 5590. http://dx.doi.org/10.3390/app11125590.

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Binary switches, which are the primitive units of all digital computing and information processing hardware, are usually benchmarked on the basis of their ‘energy–delay product’, which is the product of the energy dissipated in completing the switching action and the time it takes to complete that action. The lower the energy–delay product, the better the switch (supposedly). This approach ignores the fact that lower energy dissipation and faster switching usually come at the cost of poorer reliability (i.e., a higher switching error rate) and hence the energy–delay product alone cannot be a g

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13

Tang, Xiao-Bin, and Masayoshi Tachibana. "A BIST Scheme for Bootstrapped Switches." Electronics 10, no. 14 (2021): 1661. http://dx.doi.org/10.3390/electronics10141661.

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This paper proposes a built-in self-test (BIST) scheme for detecting catastrophic faults in bootstrapped switches. The clock signal and the gate voltage of the sampling MOS transistor are taken as the observation signals in the proposed BIST scheme. Usually, the gate voltage of the sampling MOS transistor is greater than or equal to the supply voltage when the switch is turn on, and such a voltage is not suitable for observation. To solve this problem, a low power supply voltage is provided for the bootstrapped switch to obtain a suitable observation voltage. The proposed BIST scheme and the c

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14

Mali, Ms Prachi A. "Review LDR Sensing Solar Lamp." International Journal for Research in Applied Science and Engineering Technology 12, no. 12 (2024): 648–49. https://doi.org/10.22214/ijraset.2024.65864.

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Automatic Street Light Control System is a simple yet powerful concept, which uses transistor as a switch. By using this system manual works are 100% removed. It automatically switches ON lights when the sunlight goes below the visible region of our eyes. This is done by a sensor called Light Dependant Resistor (LDR). (LDR) which senses the light actually like our eyes. It automatically switches OFF lights whenever the sunlight comes, visible to our eyes. By using this system energy consumption is also reduced because nowadays the manually operated street lights are not switched off even the s

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15

Patil, Anusuya, Madhuri G, and Pavithra K. "Automatic Street Light On and Off Using LDR." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (2023): 849–51. http://dx.doi.org/10.22214/ijraset.2023.51617.

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Abstract: Automatic Street Light Control System is a simple yet powerful concept, which uses transistor as a switch. By using this system manual works are 100% removed. It automatically switches ON lights when the sunlight goes below the visible region of our eyes. This is done by a sensor called Light Dependant Resistor (LDR) which senses the light actually like our eyes. It automatically switches OFF lights whenever the sunlight comes, visible to our eyes. By using this system energy consumption is also reduced because nowadays the manually operated street lights are not switched off even th

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16

Vandris, Evstratios, and Gerald Sobelman. "Switch-level Differential Fault Simulation of MOS VLSI Circuits." VLSI Design 4, no. 3 (1996): 217–29. http://dx.doi.org/10.1155/1996/34084.

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A new switch-level fault simulation method for MOS circuits is presented that combines compiled switch-level simulation techniques and functional fault modeling of transistor faults with the new fault simulation algorithm of differential fault simulation. The fault simulator models both node stuck-at-0, stuck-at-1 faults and transistor stuck-on, stuck-open faults. Prior to simulation, the switch-level circuit components are compiled into functional models. The effect of transistor faults on the function of the circuit components is modeled by functional fault models that execute very fast duri

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17

Ding, Yulong, Yanlin Ke, Juncong She, Yu Zhang, and Shaozhi Deng. "A Novel Darlington Structure Power Switch Using a Vacuum Field Emission Transistor." Electronics 14, no. 9 (2025): 1737. https://doi.org/10.3390/electronics14091737.

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This study proposes a power switch combining a vacuum field emission transistor (VFET) as a controlled transistor with a power bipolar Darlington transistor (DT) as an output transistor, termed the VFET–DT structure. Compared to the MOS–bipolar Darlington power switch, the VFET–DT structure achieves an extremely low off-state leakage current and high-voltage withstanding capability due to the field emission mechanism of the VFET. It can also avoid the Miller effect that results from incorporating the load resistance into the feedback loop. The high gain and high-power capacity can be achieved

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18

Edwards, Chris. "A switch in time." Communications of the ACM 64, no. 10 (2021): 13–15. http://dx.doi.org/10.1145/3479979.

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19

Gerding, M., T. Musch, and B. Schiek. "Generation of short electrical pulses based on bipolar transistorsny." Advances in Radio Science 2 (May 27, 2005): 7–12. http://dx.doi.org/10.5194/ars-2-7-2004.

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Abstract. A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority

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20

Chang, Jin-Fa, and Yo-Sheng Lin. "High Linearity DC-38 GHz CMOS SPDT Switch." Applied Sciences 11, no. 20 (2021): 9402. http://dx.doi.org/10.3390/app11209402.

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In this paper, we demonstrate a low-loss and high-linearity DC-38 GHz CMOS SPDT switch for 5G multi-band communications in 0.18 μm CMOS. Traveling-wave matching (CLCL network) is used for the output-port (ports 2 and 3) matching and isolation enhancement, while π-matching (CLC matching) is adopted for the input-port (port 1) matching. Positive/negative gate-bias is adopted for linearity enhancement because larger Pin (i.e., AC signal with larger negative Vin) is required to conduct the off-state series switch transistor. Negative-body bias is used for insertion-loss reduction because the off-s

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21

WANG, LEI, and BAOWEN LI. "HEAT SWITCH AND MODULATOR: A MODEL OF THERMAL TRANSISTOR." International Journal of Modern Physics B 21, no. 23n24 (2007): 4017–20. http://dx.doi.org/10.1142/s0217979207045128.

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A model of a thermal transistor to control heat flow is reported. Like its electronic counterpart, the thermal transistor is a three-terminal device with the important feature that the heat current through two terminals can be switched or modulated by the temperature of the third terminal. The thermal transistor model is possible because of the negative differential thermal resistance.

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22

Hanko, Branislav, Michal Frivaldsky, and Jan Morgos. "Evaluation of the Efficiency Performance of 3-Phase, 6-Switch PFC Circuit Based on the Used 1.2 kV SiC Transistor." Electronics 11, no. 3 (2022): 363. http://dx.doi.org/10.3390/electronics11030363.

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This paper evaluates the performance of the high-voltage wide-band gap SiC power transistors equipped within 3-phase bridgeless 3 kW PFC circuit. The main aim of the study is the experimental evaluation of the dynamic properties and driving power requirements of the transistors, for which the parameters are similar. These are competing products from different manufacturers, while the selection criterion was the same type of package technology (7 pin D2PAK). Second, the effect of the transistor type was analysed in terms of the performance efficiency of the PFC circuit. Within the analysis, the

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23

Alexandrov, V., O. Vorobyov, Yu Kazakov, and L. Markova. "Dynamic Energy Losses in Switch Power Amplifiers as Part of a Hydroacoustic Transmission Path." Proceedings of Telecommunication Universities 8, no. 3 (2022): 14–26. http://dx.doi.org/10.31854/1813-324x-2022-8-3-14-26.

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Results of studies of dynamic energy losses in broadband switch amplifiers of the BD and ABD classes when operating on a hydroacoustic emitter are presented. Relative energy losses in amplifying stages based on silicon (Si) and silicon carbide (SiC) field-effect transistors are compared along with dynamic processes associated with "transistor-diode" through current in switching amplification circuits with Si pulsed reverse diodes and SiC Schottky diodes. The viability of using modern SiC transistors with their own reverse Schottky diodes is demonstrated. Highfrequency components of the low-pas

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24

Im, Hyemin, Jaeyong Lee, and Changkun Park. "W-Band GaN HEMT Switch Using the State-Dependent Concurrent Matching Method." Electronics 12, no. 10 (2023): 2236. http://dx.doi.org/10.3390/electronics12102236.

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In this study, a W-band GaN single-pole single-throw (SPST) switch was designed. To realize the pass and isolation modes of the SPST switch, we proposed the design technique of a unit branch consisting of one transistor and one transmission. The characteristic impedance and length of the transmission line were determined by the impedance and the angle at which the straight line connecting the impedances of the on and off states of the transistor meets the real axis of the Smith chart. Using the design technique, the matching networks for the pass and isolation modes of the switch are concurren

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25

PROF., KATKE SHARDA P., and LIGADE SANDEEP J. PROF. "ENERGY CONSERVATION IN TRACTION SYSTEM." IJIERT - International Journal of Innovations in Engineering Research and Technology NITET-18 (March 17, 2018): 22. https://doi.org/10.5281/zenodo.1451444.

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<strong><strong> </strong>Automatic tunnel Light Control System is a simple yet powerful concept,which uses transistor as a switch. By using this system manual work are 100% removed. It automatically switches ON and OFF lights. When train enters towards the tunnel lights are ON by using PIC micro controller and sensors. When train is completely gone out of tunnel lights are OFF. By using this system energy consumption is also reduced because now a days the manually operated tunnel lights are not switched off even. In this project,no Need of manual operation likes ON time and OFF time sett

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26

Wang, Yapeng, Zhongjie Guo, Ziyi Qiu, Mengli Li, and Yuan Ren. "A Bootstrap Drive and Level Shifting Method for Buck-boost Converter with NMOS as the Main Switch Transistor." Journal of Physics: Conference Series 2645, no. 1 (2023): 012015. http://dx.doi.org/10.1088/1742-6596/2645/1/012015.

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Abstract In the design of DC-DC power supply, compared with a P-type metal oxide semiconductor field effect transistor (PMOS) with the same width-to-length ratio, N-type metal oxide semiconductor field effect transistor (NMOS) as the main switching transistor greatly reduces the on-off loss and improves the conversion efficiency of the system. This article introduces a gate voltage bootstrap and level shifter circuit for a Buck-Boost DC-DC converter with NMOS main switching transistor. The drive voltage between the gate and the source pole of the main switch transistor can be stabilized, which

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27

Sidi Mohammed Hadj, Irid, Mohammed Khaouani, Imane Four, Zakarya KOURDI, and Omar Azzoug. "SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to Ku to V-Band for Satellite Application." Journal of Integrated Circuits and Systems 19, no. 3 (2024): 1–4. https://doi.org/10.29292/jics.v19i3.885.

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This paper details the design, fabrication, and characterization of a single-pole-single-throw (SPST) switch leveraging Aluminum Nitride/Gallium Nitride/Aluminum Gallium Nitride High Electron Mobility Transistor (AlN/GaN/AlGaN HEMT) technology specifically tailored for Ku to V-band satellite applications. The switch targets high-frequency operation within the 40 GHz to 75 GHz range to satisfy the demanding specifications of satellite communication systems. The design integrates AlN, GaN, and AlGaN layers to capitalize on the superior electrical properties of GaN-based transistors while guarant

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28

Zhu, Xiaopeng. "Analysis Of Output Characteristics of Three Different Ga2O3 Heterojunction UV Photodetectors." Highlights in Science, Engineering and Technology 121 (December 24, 2024): 259–66. https://doi.org/10.54097/yj7jb628.

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Phototransistors can be used as switches and amplifiers in digital and ultraviolet photodetectors, respectively. Gallium oxide ( Ga2O3) is a common material used to make devices like transistors. However, these photodetectors usually face some problems of drain current saturation and bias saturation. But regulating the transistor switching ratio usually requires adding a voltage to the gate terminal, and will cause high current flow throughout the transistor if the gate power supply pressurized beyond the threshold. The structure of a LET is similar to that of a conventional field effect trans

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29

Do, H. L. "Low-Cost Sustainer with a Simple Energy Recovery Circuit Utilizing Parallel Resonance." Applied Mechanics and Materials 241-244 (December 2012): 602–5. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.602.

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A low-cost sustainer with a simple energy recovery (ER) circuit for plasma display is proposed in this paper. The proposed ER circuit employs a bidirectional switch consisting of one switch and four diodes. In the proposed sustainer, the insulated gate bipolar transistor (IGBT) can be used as a switch. Since all power switches are turned off under zero-current switching (ZCS), the tail current problem associated with IGBT does not occur in the proposed sustainer. Theoretical analysis and performance of the proposed ER circuit were verified on an experimental prototype operating at 200 kHz swit

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30

Boiko, Anatoliy F., and Marina N. Voronkova. "ENERGY ANALYSIS OF TRANSISTOR SWITCH TRANSIENTS." Proceedings of Irkutsk State Technical University 21, no. 7 (2017): 95–101. http://dx.doi.org/10.21285/1814-3520-2017-7-95-101.

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31

Tikhomirov, V. G., Yu V. Solov’ev, A. G. Gudkov, M. K. Popov, and S. V. Chizhikov. "Monolithic transistor switch for microwave radiometry." Journal of Physics: Conference Series 2086, no. 1 (2021): 012049. http://dx.doi.org/10.1088/1742-6596/2086/1/012049.

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Abstract Modern medical microwave diagnostic equipment requires the application of solutions related to the compactness of the developed devices and high performance. Ensuring these requirements is possible by using a modern semiconductor component base based on A3B5 compounds. One of the promising materials for this purpose is gallium nitride. The paper presents the design and manufacturing technology of one of the main control elements of the microwave signal in microwave radiothermometer - monolithic AlGaN/GaN/SiC HEMT SPDT transistor switch.

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32

Xue, Fei, Libo Chen, Longfei Wang, et al. "MoS2Tribotronic Transistor for Smart Tactile Switch." Advanced Functional Materials 26, no. 13 (2016): 2104–9. http://dx.doi.org/10.1002/adfm.201504485.

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Alleva, Vincenzo, Andrea Bettidi, Walter Ciccognani, et al. "High-power monolithic AlGaN/GaN high electron mobility transistor switches." International Journal of Microwave and Wireless Technologies 1, no. 4 (2009): 339–45. http://dx.doi.org/10.1017/s1759078709990183.

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This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 2

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Mahesh Gowda, N. M., and S. S. Parthasarathy. "Selection of Inductor and Snubber Capactor to Optimize the Size and Efficiency of DC-DC Switching Power Converter." Asian Journal of Engineering and Applied Technology 7, no. 1 (2018): 49–52. http://dx.doi.org/10.51983/ajeat-2018.7.1.977.

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This paper presents a selection of inductor and snubber capacitor in non-isolated synchronous DC-DC switching power converter. The circuit is made to operate in Synchronous Discontinuous Conduction Mode (SDCM)/Forced Continuous Conduction Mode (FCCM) of operation for minimum inductor value, to reduce the size, weight and cost of the converter. The turn off loss of the switch induced by SDCM of operation is minimized by connecting snubber capacitor across the transistor switch. Before the switch is turned ON, snubber capacitor requires certain amount of energy must be stored in the inductor to

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35

Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a

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Polishchuk, Mykola, Serhii Grinyuk, Serhii Kostiuchko, Anatolii Tkachuk, and Pavlo Savaryn. "TESLA SWITCH OF 4 BATTERIES BASED ON THE ARDUINO UNO BOARD." Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska 13, no. 3 (2023): 111–16. http://dx.doi.org/10.35784/iapgos.4051.

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The paper considered the theoretical information of generators for several power sources, schematic their solutions, and the main disadvantages and advantages. A generator for 4 batteries based on field-effect transistors with optical galvanic isolation and a clock generator built on the basis of the Atmega328 microcontroller, which is part of the Arduino Uno device, was studied. The result of the study was the confirmation of the existence of the "Tesla-switch" effect. A program code was developed for the alternate switching of six transistor switches of the optical decoupling. The structural

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Saputra, Renda Sandi. "Development of Learning Media Simulation of Automatic Garden Lights Using the Proteus Application." International Journal of Research in Community Services 3, no. 2 (2022): 71–77. http://dx.doi.org/10.46336/ijrcs.v3i2.270.

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With so many garden lights, gardeners often struggle to turn on or turn on garden lights manually, this study aims to make it easier for park officers or gardeners to turn on or turn off garden lights practically. Automatic garden light is a lighting system that runs automatically, this system can use light sensors such as LDR (Light Dependent Resistor), photodiode and others. However, this circuit system can also use a timer that has been set in time when the circuit or garden lights will turn on and off, this can happen because there is an automatic switch circuit that utilizes the character

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АРСЕНЮК, ДМИТРО, та ЮРІЙ ЗІНЬКОВСЬКИЙ. "АНАЛІЗ ТА МОДЕЛЮВАННЯ ЗВОРОТНОХОДОВИХ ПЕРЕТВОРЮВАЧІВ З ВИКОРИСТАННЯМ ШИРОКОЗОННИХ НАПІВПРОВІДНИКОВИХ ПРИЛАДІВ НА ОСНОВІ НІТРИДУ ГАЛІЮ". Herald of Khmelnytskyi National University. Technical sciences 329, № 6 (2023): 56–60. https://doi.org/10.31891/2307-5732-2023-329-6-56-60.

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This paper presents the findings from a study on AC-DC power converters, specifically focusing on those where the power element is a gallium nitride (GaN HEMT) based field-effect transistor. Flyback converters are employed in the development of pulsed power supplies, aiming for high efficiency and minimal heat generation, which are key objectives in contemporary power electronics. The study primarily addresses the challenge of switching losses in power transistors at elevated switching frequencies, an area where silicon-based field-effect transistors have nearly reached their developmental zen

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Wang, Xinxin, and Huanglong Li. "A steep-slope tellurium transistor with a native voltage amplifying threshold switch." Applied Physics Letters 120, no. 22 (2022): 223502. http://dx.doi.org/10.1063/5.0090179.

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What precludes lowering the supply voltage and overall power consumption of the transistor is the infamous Boltzmann tyranny, a fundamental thermionic limit preventing the subthreshold slope (SS) of the transistor from being lower than 60 mV dec−1 at room temperature (RT). Internal voltage amplification through the use of an additional threshold switch (TS) serially connected to the transistor channel has been shown to be highly effective to break the Boltzmann barrier. This approach, however, is typically heterogeneous by employing TS materials that are foreign to the transistor. Recently, se

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Shrestha, Rajesh, Dipak Subedi, and Shekhar Gurung. "Design & Application of Computer Controlled Switch." Journal of Nepal Physical Society 4, no. 1 (2017): 97. http://dx.doi.org/10.3126/jnphyssoc.v4i1.17343.

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<p class="Default">A parallel port is an inexpensive and powerful tool for controlling the real world peripherals. It provides eight Transistor Transistor Logic (TTL) outputs, fives inputs and four bidirectional input and output for Personal Computer (PC) interruption. By using the structure oriented programming language they are fused in circuit boards, microcontrollers etc. to carry out specified functions. The reason is the elegance and simplicity of the code used in visual basic.</p><p><strong>Journal of Nepal Physical Society</strong><em><br />&lt

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Bilal, Osama R., André Foehr, and Chiara Daraio. "Bistable metamaterial for switching and cascading elastic vibrations." Proceedings of the National Academy of Sciences 114, no. 18 (2017): 4603–6. http://dx.doi.org/10.1073/pnas.1618314114.

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The realization of acoustic devices analogous to electronic systems, like diodes, transistors, and logic elements, suggests the potential use of elastic vibrations (i.e., phonons) in information processing, for example, in advanced computational systems, smart actuators, and programmable materials. Previous experimental realizations of acoustic diodes and mechanical switches have used nonlinearities to break transmission symmetry. However, existing solutions require operation at different frequencies or involve signal conversion in the electronic or optical domains. Here, we show an experiment

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Gupta, Kirti, Ranjana Sridhar, Jaya Chaudhary, Neeta Pandey, and Maneesha Gupta. "New Low-Power Tristate Circuits in Positive Feedback Source-Coupled Logic." Journal of Electrical and Computer Engineering 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/670508.

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Two new design techniques to implement tristate circuits in positive feedback source-coupled logic (PFSCL) have been proposed. The first one is a switch-based technique while the second is based on the concept of sleep transistor. Different tristate circuits based on both techniques have been developed and simulated using 0.18 μm CMOS technology parameters. A performance comparison indicates that the tristate PFSCL circuits based on sleep transistor technique are more power efficient and achieve the lowest power delay product in comparison to CMOS-based and the switch-based PFSCL circuits.

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Zhang, Chao, Zhicheng Shi, Xuefeng Liu, Huanhong Chen, and Ai Zhang. "Design of a High Speed Electro-optic Q-switch Circuit for Aerospace Applications." Journal of Physics: Conference Series 2617, no. 1 (2023): 012011. http://dx.doi.org/10.1088/1742-6596/2617/1/012011.

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Abstract In order to meet the requirements of high amplitude and high speed of electro-optic Q-switch voltage, a high speed electro-optic Q-switch circuit for aerospace applications is designed. According to the principle of Marx generator, the circuit uses a high speed driving chip to drive the switching transistor to conduct. The charge of the primary energy storage capacitor of the pulse transformer is quickly released, and the secondary induced voltage drives the switches of the Marx generator to open quickly and synchronously. By utilizing the fast and synchronous opening of MOSFET (Metal

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Huang, Xindong, Chengying Chen, and Shaokang Zhou. "A Wideband and High-Power RF Switching Design." Sensors 25, no. 10 (2025): 3209. https://doi.org/10.3390/s25103209.

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This paper presents an RF switch chip with a wide operating bandwidth from 6 to 18 GHz, designed for RF front-end applications in mobile communications. A series-parallel topology combined with a stacked transistor structure was employed to improve power handling while maintaining low insertion loss and high isolation. To further optimize isolation and return loss, LC resonant circuits were introduced by utilizing off-state transistors as capacitive elements. Compared to existing designs, the proposed switch achieved an improved trade-off between bandwidth, power capacity, and port performance

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Torres, J. A., and J. C. Freire. "Monolithic transistor SPST switch for L-band." IEEE Transactions on Microwave Theory and Techniques 50, no. 1 (2002): 51–56. http://dx.doi.org/10.1109/22.981245.

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Shim, Wooyoung, Jun Yao, and Charles M. Lieber. "Programmable Resistive-Switch Nanowire Transistor Logic Circuits." Nano Letters 14, no. 9 (2014): 5430–36. http://dx.doi.org/10.1021/nl502654f.

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Antón, C., T. C. H. Liew, G. Tosi, et al. "Dynamics of a polariton condensate transistor switch." Applied Physics Letters 101, no. 26 (2012): 261116. http://dx.doi.org/10.1063/1.4773376.

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Lukin, K. A., G. P. Pochanin, and S. A. Masalov. "Large-current radiator with avalanche transistor switch." IEEE Transactions on Electromagnetic Compatibility 39, no. 2 (1997): 156–60. http://dx.doi.org/10.1109/15.584938.

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Lin, De Hui, Ping Lou, and Hui Pin Lin. "Design and Implementation of a New Drive Circuit of Monolithic Emitter-Switching Bipolar Transistor (ESBT)." Applied Mechanics and Materials 668-669 (October 2014): 812–17. http://dx.doi.org/10.4028/www.scientific.net/amm.668-669.812.

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This paper introduces a kind of monolithic emitter switched bipolar transistor (ESBT) for three-phase rectifier applications and other high voltage applications. This paper proposes an improved driving circuit, combining the soft switch circuit. We made a flyback circuit prototype which the rated power is 80W, and the maximum input voltage is 800V, and compared with the existing driving circuit.

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Aithekar, Vijay. "A Review on The impact of Transistor Configuration as an amplifier." International Journal of Advanced Science Computing and Engineering 3, no. 3 (2021): 123–27. http://dx.doi.org/10.30630/ijasce.3.3.60.

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In the electronic era, the development of the transistor is unquestionably one of the most valuable contributions in the field of Electronic components. Transistor has an application to work as a switch and as an amplifier and almost in all cases. The transistor is taken as the use of an amplifier because it gives proper biasing. In this review paper, we are going to compare the Transistor as an amplifier with three configurations and select one desirable configuration with perfect amplification & that is CE configuration and taken as used in everywhere mostly.

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