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Journal articles on the topic 'Transistors à nanotube de carbone'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 February 2022

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1

Cao, Qing, Jerry Tersoff, Damon B. Farmer, Yu Zhu, and Shu-Jen Han. "Carbon nanotube transistors scaled to a 40-nanometer footprint." Science 356, no. 6345 (2017): 1369–72. http://dx.doi.org/10.1126/science.aan2476.

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The International Technology Roadmap for Semiconductors challenges the device research community to reduce the transistor footprint containing all components to 40 nanometers within the next decade. We report on a p-channel transistor scaled to such an extremely small dimension. Built on one semiconducting carbon nanotube, it occupies less than half the space of leading silicon technologies, while delivering a significantly higher pitch-normalized current density—above 0.9 milliampere per micrometer at a low supply voltage of 0.5 volts with a subthreshold swing of 85 millivolts per decade. Fur

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2

Cao, Qing, Shu-Jen Han, Jerry Tersoff, et al. "End-bonded contacts for carbon nanotube transistors with low, size-independent resistance." Science 350, no. 6256 (2015): 68–72. http://dx.doi.org/10.1126/science.aac8006.

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Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabri

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3

Hamieh, S. "Improving the RF Performance of Carbon Nanotube Field Effect Transistor." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/724121.

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Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tub

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4

Sulpizio, J. A., Z. Z. Bandić, and D. Goldhaber-Gordon. "Nanofabrication of top-gated carbon nanotube-based transistors: Probing electron-electron interactions in one-dimensional systems." Journal of Materials Research 21, no. 11 (2006): 2916–21. http://dx.doi.org/10.1557/jmr.2006.0361.

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Carbon nanotubes are interesting for studying the remarkable electronic properties of one-dimensional (1D) quantum systems. Electron flow in such systems is not described by Fermi liquid theory—restricted dimensionality leads to the appearance of collective excitations—or Luttinger liquid behavior. Previous studies have probed Luttinger liquid behavior by tunneling into or between one-dimensional systems. We propose to extend these studies by using narrow top gates to introduce tunable tunnel barriers within nanotubes. We report on the scalable fabrication of carbon nanotube-based transistors

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5

Xu, Yao, Ashok Srivastava, and Ashwani K. Sharma. "Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance." VLSI Design 2010 (February 17, 2010): 1–8. http://dx.doi.org/10.1155/2010/864165.

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Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects use

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6

YOUSEFI, REZA. "THE EFFECT OF CARBON NANOTUBE CHIRALITY ON THE PERFORMANCE OF THE STRAINED TUNNELING CARBON NANOTUBE FETs." Modern Physics Letters B 26, no. 03 (2012): 1150019. http://dx.doi.org/10.1142/s0217984911500199.

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In this paper, using the non-equilibrium Green's function formalism (NEGF), the effect of the chirality of carbon nanotube (CNT) on the performance of the strained tunneling carbon nanotube field effect transistors (T-CNTFETs) has been investigated. In this work, all evaluations are done by this assumption that the ON current, I ON , is the main performance metric in the T-CNTFETs. The uniaxial strain has been considered in this work. On the other hand, for constructing a transistor with a desired I ON , a variety of CNTs with the appropriate uniaxial strain could be used. The results of doing

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7

Шарапов, А. А. "КОНТАКТНЫЕ ЯВЛЕНИЯ В ПОЛЕВЫХ НАНОТРАНЗИСТОРАХ НА ОСНОВЕ УГЛЕРОДНЫХ НАНОТРУБОК". NANOINDUSTRY Russia 96, № 3s (2020): 758–60. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.758.760.

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В настоящее время актуальна задача поиска и исследования новых материалов для формирования полевых транзисторов с характерной длиной канала менее 5 нм, обеспечивающих выполнение необходимых требований по энергопотреблению и быстродействию. В работе обоснована важность рассмотрения нанотранзисторов на основе углеродных нанотрубок в качестве конкурирующих приборов по отношению к полевым транзисторам на основе традиционных материалов. Определены необходимые параметры углеродных нанотрубок, позволяющие использовать структуры на их основе для формирования наноразмерных транзисторов. Рассмотрены мет

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8

Chikkadi, Kiran, Matthias Muoth, Cosmin Roman, Miroslav Haluska, and Christofer Hierold. "Advances in NO2 sensing with individual single-walled carbon nanotube transistors." Beilstein Journal of Nanotechnology 5 (November 20, 2014): 2179–91. http://dx.doi.org/10.3762/bjnano.5.227.

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The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistor

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9

DAI, HONGJIE, ALI JAVEY, ERIC POP, DAVID MANN, WOONG KIM, and YUERUI LU. "ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES." Nano 01, no. 01 (2006): 1–13. http://dx.doi.org/10.1142/s1793292006000070.

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This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the stro

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10

GHADIRY, MAHDIAR, MAHDIEH NADI, HOSEIN MOHAMMADI, and ASRULNIZAM BIN ABD MANAF. "ANALYSIS OF A NOVEL FULL ADDER DESIGNED FOR IMPLEMENTING IN CARBONE NANOTUBE TECHNOLOGY." Journal of Circuits, Systems and Computers 21, no. 05 (2012): 1250042. http://dx.doi.org/10.1142/s0218126612500429.

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A novel low power-delay product full adder circuit is presented in this paper. A new approach is used in order to design full-swing full adder with low number of transistors. The proposed full adder is implemented in MOSFET-like Carbon nanotube technology and the layout is provided based on standard 32 nm technology from MOSIS. The simulation results using HSPICE show that, there are substantial improvements in both power and performance of the proposed circuit compared to latest designs. In addition, the proposed circuit has been implemented in conventional 32 nm process to estimate the advan

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11

Marcus, Matthew S., J. M. Simmons, O. M. Castellini, R. J. Hamers, and M. A. Eriksson. "Photogating carbon nanotube transistors." Journal of Applied Physics 100, no. 8 (2006): 084306. http://dx.doi.org/10.1063/1.2357413.

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12

Tassi, N. G., J. F. Rabolt, and G. B. Blanchet. "Non-percolating nanotube networks for thin film transistors: A pathway to channel length reduction." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 221, no. 3 (2007): 87–91. http://dx.doi.org/10.1243/17403499jnn114.

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This study outlines a method to increase the transconductance of thin film transistors (TFTs) by assembling non-percolating random arrays of carbon nanotubes. It represents an effective, simple tool to substantially reduce the transistor channel length, thus increase transconductance, without lessening the on/off ratio. When non-percolating arrays of carbon nanotubes are linked via a semiconducting overlay, the majority of current paths between source and drain follow the highly conducting nanotubes with short, switchable semiconducting links completing the circuit. This field-induced percolat

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13

Li, Hong, Jianping Zou, and Qing Zhang. "Carbon Nanotube-Gated Carbon Nanotube Field-Effect Transistors." Nanoscience and Nanotechnology Letters 2, no. 1 (2010): 21–25. http://dx.doi.org/10.1166/nnl.2010.1053.

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14

Troudi, M., A. Mahmoudi, N. Sghaier, and A. Soltani. "Theoretical Modeling of a Photodetector Based on Ballistic Carbone Nanotube with VHDL-AMS." International Letters of Chemistry, Physics and Astronomy 55 (July 2015): 112–18. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.55.112.

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In this paper we present a new VHDL-AMS model of carbone nanotube field effect transistor for photo-detection application: (photo-CNTFET). Contrary to classical photodetectors, the photo-CNTFET has the potential to work on a wide range of optical frequencies and high quantum efficiency and can be used as a highly sensitive and rapid response photodetector. Based on its excellent conductivity and very low capacitance, Carbon nanotubes provide highly mobile electrons and low noise in the system. The simulation results obtained in the present paper has shown its relevance as precise and fast tool

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15

Gu, Guiru, Yunfeng Ling, Runyu Liu, et al. "All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response." Journal of Nanotechnology 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/823680.

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We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band stru

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16

Lee, Keum-Ju, Hye-Mi So, Byoung-Kye Kim, et al. "Single Nucleotide Polymorphism Detection Using Au-Decorated Single-Walled Carbon Nanotube Field Effect Transistors." Journal of Nanomaterials 2011 (2011): 1–8. http://dx.doi.org/10.1155/2011/105138.

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We demonstrate that Au-cluster-decorated single-walled carbon nanotubes (SWNTs) may be used to discriminate single nucleotide polymorphism (SNP). Nanoscale Au clusters were formed on the side walls of carbon nanotubes in a transistor geometry using electrochemical deposition. The effect of Au cluster decoration appeared as hole doping when electrical transport characteristics were examined. Thiolated single-stranded probe peptide nucleic acid (PNA) was successfully immobilized on Au clusters decorating single-walled carbon nanotube field-effect transistors (SWNT-FETs), resulting in a conductan

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17

Wu, Meng-Yin, Juan Zhao, Nicholas J. Curley, Tzu-Hsuan Chang, Zhenqiang Ma, and Michael S. Arnold. "Biaxially stretchable carbon nanotube transistors." Journal of Applied Physics 122, no. 12 (2017): 124901. http://dx.doi.org/10.1063/1.4991710.

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18

Ball, Philip. "IBM develops carbon nanotube transistors." Physics World 25, no. 12 (2012): 12. http://dx.doi.org/10.1088/2058-7058/25/12/22.

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19

GUO, JING, SIYURANGA O. KOSWATTA, NEOPHYTOS NEOPHYTOU, and MARK LUNDSTROM. "CARBON NANOTUBE FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 16, no. 04 (2006): 897–912. http://dx.doi.org/10.1142/s0129156406004077.

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This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.

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20

Kimbrough, Joevonte, Lauren Williams, Qunying Yuan, and Zhigang Xiao. "Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices." Micromachines 12, no. 1 (2020): 12. http://dx.doi.org/10.3390/mi12010012.

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In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs w

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21

LI, HONG, QING ZHANG, and JINGQI LI. "CHARGE STORAGE IN CARBON NANOTUBE FIELD-EFFECT TRANSISTORS." International Journal of Nanoscience 05, no. 04n05 (2006): 553–57. http://dx.doi.org/10.1142/s0219581x06004784.

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Very significant hysteresis characteristics are found in single wall carbon nanotubes field-effect transistors (CNTFET) fabricated using AC dielectrophoresis method. The CNTFETs show ambipolar characteristics. Two clear hysteresis loops are observed when the gate voltage is forward and backward swept. The hysteresis characteristics are studied from room temperature down to 16 K. It is found that the hysteresis loops become smaller as temperature is decreased. We suggested that the hysteresis is caused by charge trapping in foreign species covering the single wall carbon nanotube. It is more di

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22

Marani, R., and A. G. Perri. "Effects of Temperature Dependence of Energy Bandgap on I–V Characteristics in CNTFETs Models." International Journal of Nanoscience 16, no. 05n06 (2017): 1750009. http://dx.doi.org/10.1142/s0219581x17500090.

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In this paper, we analyze the effects of temperature dependence of energy bandgap on [Formula: see text] characteristics in some carbon nanotube field effect transistors (CNTFETs) models proposed in literature in order to identify the one more suitable for computer aided design (CAD) applications. At first we consider a compact, semi-empirical model, already proposed by us, performing [Formula: see text] characteristic simulations at different temperatures. Our results are compared with those obtained with the Stanford-Source virtual carbon nanotube field-effect transistor model (VS-CNFET), ob

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23

Li, Jingqi, Qingxiao Wang, Weisheng Yue, et al. "Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors." Nanoscale 6, no. 15 (2014): 8956–61. http://dx.doi.org/10.1039/c4nr00978a.

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24

DELZEIT, LANCE, RAMSEY STEVENS, CATTIEN NGUYEN, and M. MEYYAPPAN. "DIRECTED GROWTH OF SINGLE-WALLED CARBON NANOTUBES." International Journal of Nanoscience 01, no. 03n04 (2002): 197–204. http://dx.doi.org/10.1142/s0219581x02000176.

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Single-walled carbon nanotubes (SWNTs) are grown by thermal chemical vapor deposition at 900°C using methane. Application of an electric field (0.4 V/μm) in situ during the growth process results in directed growth of SWNTs on a horizontal plane bridging a distance as long as 25 μm. This approach is useful in the fabrication of nanotube based transistors.

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25

Lerner, Mitchell B., Brett Goldsmith, John Rockway, and Israel Perez. "Towards a Carbon Nanotube Intermodulation Product Sensor for Nonlinear Energy Harvesting." Journal of Sensors 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/983697.

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It is critically important in designing RF receiver front ends to handle high power jammers and other strong interferers. Instead of blocking incoming energy or dissipating it as heat, we investigate the possibility of redirecting that energy for harvesting and storage. The approach is based on channelizing a high power signal into a previously unknown circuit element which serves as a passive intermodulation device. This intermodulation component must produce a hysteretic current-voltage curve to be useful as an energy harvester. Here we demonstrate a method by which carbon nanotube transisto

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26

Jain, Neeraj, Harsh, and R. K. Sinha. "Analysis of Electrical Conductance of Carbon Nanotubes." Advanced Materials Research 67 (April 2009): 109–14. http://dx.doi.org/10.4028/www.scientific.net/amr.67.109.

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Carbon nanotubes show great promise as a new class of electronic materials owing to the change in their electrical properties with chirality of the nanotube. On one hand, they can rival the best metal and on the other, a semiconducting nanotube can work as a channel in a nano field effect transistors. The energy band structure and density of states of SWNTs of different chiralities is reviewed here and using a diameter dependent model, the electrical conductance of a single wall nanotube (SWNT) and a multi wall nanotube (MWNT) is analyzed. It is found that conductance of a CNT depends largely

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27

Cheng, Chin-Lung, Chien-Wei Liu, Bau-Tong Dai, and Ming-Yen Lee. "Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition." Journal of Nanomaterials 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/125846.

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Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube network

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28

Lee, Gi-Ja, Ji-Eun Lim, Ji-Hye Park, Suk-Keun Choi, and Hun-Kuk Park. "Real time neurotransmitter analysis using CNT (Carbon Nanotube) Transistors(2A1 Micro & Nano Biomechanics IV)." Proceedings of the Asian Pacific Conference on Biomechanics : emerging science and technology in biomechanics 2007.3 (2007): S140. http://dx.doi.org/10.1299/jsmeapbio.2007.3.s140.

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29

Panhuis, Marc in het, Srinivas Gowrisanker, Douglas J Vanesko, et al. "Nanotube Network Transistors from Peptide-Wrapped Single-Walled Carbon Nanotubes." Small 1, no. 8-9 (2005): 820–23. http://dx.doi.org/10.1002/smll.200500001.

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30

Avouris, Ph, R. Martel, V. Derycke, and J. Appenzeller. "Carbon nanotube transistors and logic circuits." Physica B: Condensed Matter 323, no. 1-4 (2002): 6–14. http://dx.doi.org/10.1016/s0921-4526(02)00870-0.

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31

Maneux, Cristell, Sebastien Fregonese, Thomas Zimmer, et al. "Multiscale simulation of carbon nanotube transistors." Solid-State Electronics 89 (November 2013): 26–67. http://dx.doi.org/10.1016/j.sse.2013.06.013.

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32

Javey, Ali, Jing Guo, Qian Wang, Mark Lundstrom, and Hongjie Dai. "Ballistic carbon nanotube field-effect transistors." Nature 424, no. 6949 (2003): 654–57. http://dx.doi.org/10.1038/nature01797.

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33

Chimot, N., V. Derycke, M. F. Goffman, J. P. Bourgoin, H. Happy, and G. Dambrine. "Gigahertz frequency flexible carbon nanotube transistors." Applied Physics Letters 91, no. 15 (2007): 153111. http://dx.doi.org/10.1063/1.2798583.

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34

Castro, L. C., and D. L. Pulfrey. "Extrapolatedfmaxfor carbon nanotube field-effect transistors." Nanotechnology 17, no. 1 (2005): 300–304. http://dx.doi.org/10.1088/0957-4484/17/1/051.

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35

Aikawa, Shinya, Erik Einarsson, Theerapol Thurakitseree, Shohei Chiashi, Eiichi Nishikawa, and Shigeo Maruyama. "Deformable transparent all-carbon-nanotube transistors." Applied Physics Letters 100, no. 6 (2012): 063502. http://dx.doi.org/10.1063/1.3683517.

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36

Lee, Yongwoo, Jinsu Yoon, Hyo-Jin Kim, et al. "Wafer-scale carbon nanotube network transistors." Nanotechnology 31, no. 46 (2020): 465303. http://dx.doi.org/10.1088/1361-6528/abac31.

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37

Ouyang, Yijian, and Jing Guo. "Heat dissipation in carbon nanotube transistors." Applied Physics Letters 89, no. 18 (2006): 183122. http://dx.doi.org/10.1063/1.2382734.

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38

Artukovic, E., M. Kaempgen, D. S. Hecht, S. Roth, and G. Grüner. "Transparent and Flexible Carbon Nanotube Transistors." Nano Letters 5, no. 4 (2005): 757–60. http://dx.doi.org/10.1021/nl050254o.

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39

Pourfath, M., H. Kosina, and S. Selberherr. "Geometry optimization for carbon nanotube transistors." Solid-State Electronics 51, no. 11-12 (2007): 1565–71. http://dx.doi.org/10.1016/j.sse.2007.09.021.

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40

Franklin, Aaron D., and Zhihong Chen. "Length scaling of carbon nanotube transistors." Nature Nanotechnology 5, no. 12 (2010): 858–62. http://dx.doi.org/10.1038/nnano.2010.220.

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41

Franklin, Aaron D. "The road to carbon nanotube transistors." Nature 498, no. 7455 (2013): 443–44. http://dx.doi.org/10.1038/498443a.

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42

Austing, D. G., J. Lefebvre, J. Bond, and P. Finnie. "Carbon contacted nanotube field effect transistors." Applied Physics Letters 90, no. 10 (2007): 103112. http://dx.doi.org/10.1063/1.2711178.

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43

Franklin, Aaron D., Siyuranga O. Koswatta, Damon B. Farmer, et al. "Carbon Nanotube Complementary Wrap-Gate Transistors." Nano Letters 13, no. 6 (2013): 2490–95. http://dx.doi.org/10.1021/nl400544q.

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44

Valitova, Irina, Michele Amato, Farzaneh Mahvash, et al. "Carbon nanotube electrodes in organic transistors." Nanoscale 5, no. 11 (2013): 4638. http://dx.doi.org/10.1039/c3nr33727h.

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45

Bachtold, A. "Logic Circuits with Carbon Nanotube Transistors." Science 294, no. 5545 (2001): 1317–20. http://dx.doi.org/10.1126/science.1065824.

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46

Gruner, G. "Carbon nanotube transistors for biosensing applications." Analytical and Bioanalytical Chemistry 384, no. 2 (2005): 322–35. http://dx.doi.org/10.1007/s00216-005-3400-4.

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47

Pourfath, Mahdi, Hans Kosina, and Siegfried Selberherr. "Rigorous modeling of carbon nanotube transistors." Journal of Physics: Conference Series 38 (May 10, 2006): 29–32. http://dx.doi.org/10.1088/1742-6596/38/1/008.

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48

Uchino, Takashi, Greg Ayre, David Smith, John Hutchison, C. de Groot, and Peter Ashburn. "The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors." Nanomaterials 11, no. 10 (2021): 2481. http://dx.doi.org/10.3390/nano11102481.

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We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs,

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Teichmann, P., C. Friederich, and D. Schmitt-Landsiedel. "Pushing energy savings in adiabatic logic by carbon-nanotube field effect transistors." Advances in Radio Science 9 (August 1, 2011): 215–18. http://dx.doi.org/10.5194/ars-9-215-2011.

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Abstract. For the first time carbon nanotube (CNT) transistor based adiabatic logic (AL) was analyzed in this work and compared to CNT based static CMOS (CCNT). Static CCNT inverters are used as a reference and compared to inverters in the AL families Efficient Charge Recovery Logic (ECRL) and Positive Feedback Adiabatic Logic (PFAL) in terms of energy dissipation. Energy savings by adiabatic logic in dependence of operating frequency, supply voltage and number of nanotubes per transistor are reviewed. It is shown that CNT based AL circuits provide high energy saving factors even for high freq

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Wu, Yucui, Xinnan Lin, and Min Zhang. "Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications." Journal of Nanomaterials 2013 (2013): 1–16. http://dx.doi.org/10.1155/2013/627215.

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We review the present status of single-walled carbon nanotubes (SWCNTs) for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs). The most popular SWCNT growth method is chemical vapor deposition (CVD), including plasma-enhanced chemical vapor deposition (PECVD), floating catalyst chemical vapor deposition (FCCVD), and thermal CVD. Carbon nanotubes (CNTs) used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation

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