Relevant bibliographies by topics / Transistors. Metal organic chemical vapor deposition

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Transistors. Metal organic chemical vapor deposition'

Author: Grafiati
Published: 4 June 2021
Last updated: 10 February 2022

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Journal articles on the topic "Transistors. Metal organic chemical vapor deposition"

1

Lebedev, M. S. "Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization." Key Engineering Materials 508 (March 2012): 7–10. http://dx.doi.org/10.4028/www.scientific.net/kem.508.7.

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Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon Nanotubes Transistors. MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques of HfO2, Al2O3 and (Al2O3)x(HfO2)1-X Thin Films Were Applied Using Metal-Organic Substances as the Precursors. Dependences of Growth Rates on Process Parameters Were Studied. The Chemical Structure and Properties of the Films and Electrophysical Characteristics of the Test Structures Were Investigated.
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Liu, Yu Huai, Fang Wang, Wei Zhang, et al. "Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction." Applied Mechanics and Materials 341-342 (July 2013): 204–7. http://dx.doi.org/10.4028/www.scientific.net/amm.341-342.204.

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InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD gro
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Shelton, B. S., J. J. Huang, D. J. H. Lambert, et al. "AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition." Electronics Letters 36, no. 1 (2000): 80. http://dx.doi.org/10.1049/el:20000053.

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Choi, Kyu-Jeong, Woong-Chul Shin, and Soon-Gil Yoon. "Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors." Thin Solid Films 384, no. 1 (2001): 146–50. http://dx.doi.org/10.1016/s0040-6090(00)01803-4.

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Koksaldi, Onur S., Brian Romanczyk, Jeffrey Haller, et al. "High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications." Semiconductor Science and Technology 35, no. 12 (2020): 124004. http://dx.doi.org/10.1088/1361-6641/abbfeb.

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Tadjer, Marko J., Karl D. Hobart, Michael A. Mastro, et al. "Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices." Materials Science Forum 645-648 (April 2010): 1215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1215.

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Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.
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Mastro, M. A., J. K. Hite, C. R. Eddy та ін. "Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices". International Journal of High Speed Electronics and Systems 28, № 01n02 (2019): 1940007. http://dx.doi.org/10.1142/s012915641940007x.

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Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
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Houston, P. A., C. Blaauw, A. Margittai, et al. "Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition." Electronics Letters 23, no. 18 (1987): 931. http://dx.doi.org/10.1049/el:19870656.

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Guo, Hong-Yu, Yuan-Jie Lv, Guo-Dong Gu, et al. "High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition." Chinese Physics Letters 32, no. 11 (2015): 118501. http://dx.doi.org/10.1088/0256-307x/32/11/118501.

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Quan, Ru-Dai, Jin-Cheng Zhang, Ya-Chao Zhang, Wei-Hang Zhang, Ze-Yang Ren, and Yue Hao. "Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition." Chinese Physics Letters 33, no. 10 (2016): 108104. http://dx.doi.org/10.1088/0256-307x/33/10/108104.

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Dissertations / Theses on the topic "Transistors. Metal organic chemical vapor deposition"

1

Shelton, Bryan Stephen. "The simulation, processing, and characterization of AlGaN/GaN heterojunction transistors grown by metalorganic chemical vapor deposition /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004376.

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Lambert, Damien Jean Henri. "Growth and characterization of group III-nitride power transistors, power rectifiers and solar-blind detectors by metalorganic chemical vapor deposition /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004311.

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Narayan, Bravishma. "Study of III-N heterostructure field effect transistors." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37299.

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This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN H
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Nuesca, Guillermo M. "Surface and Interfacial Studies of Metal-Organic Chemical Vapor Deposition of Copper." Thesis, University of North Texas, 1997. https://digital.library.unt.edu/ark:/67531/metadc278058/.

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The nucleation and successful growth of copper (Cu) thin films on diffusion barrier/adhesion promoter substrates during metal-organic chemical vapor deposition (MOCVD) are strongly dependent on the initial Cu precursor-substrate chemistry and surface conditions such as organic contamination and oxidation. This research focuses on the interactions of bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II), [Cu(hfac)2], with polycrystalline tantalum (Ta) and polycrystalline as well as epitaxial titanium nitride (TiN) substrates during Cu MOCVD, under ultra-high vacuum (UHV) conditions and low subst
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Nami, Ziba. "Semi-empirical and numerical modeling of metal-organic chemical vapor deposition." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/16418.

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Gao, Liming [Verfasser]. "Silver Metal Organic Chemical Vapor Deposition for Microelectronic Metallization / Liming Gao." Aachen : Shaker, 2005. http://d-nb.info/1181610931/34.

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Endle, James Patrick. "MOCVD of multimetal and noble metal films /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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Chotsuwan, Chuleekorn. "Organometallic precursors for the chemical vapor deposition of LaB₆." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0005023.

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Cuadra, Amalia C. "Metal organic chemical vapor deposition and atomic layer deposition of strontium oxide films on silicon surfaces." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 164 p, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:1440589.

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Welton, Theresa E. (Theresa Eilene). "The Metal-Organic Chemical Vapor Deposition of Cu(II)-bishexafluoroacetylacetonate on a Tungsten Substrate." Thesis, University of North Texas, 1992. https://digital.library.unt.edu/ark:/67531/metadc500726/.

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Evidence is reported for the formation of carbon-containing contamination products at the copper-tungsten (Cu-W) interface during the metal organic chemical vapor deposition (MOCVD) of copper on tungsten. Cu(II)bishexafluoroacetylacetonate [Cu(hfac)_2] was physisorbed onto lightly oxidized tungsten (WO_x) at 115K, under ultra-high vacuum conditions, and then annealed sequentially to higher temperatures. Copper reduction was observed by 320K. Carbonaceous and carbidic contamination of the WO_x surface was observed, even after sample warming to 625K in UHV. The results indicate that low temperat
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Books on the topic "Transistors. Metal organic chemical vapor deposition"

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Emanuel, Mark A. Metalorganic chemical vapor deposition for the heterostructure hot electron diode. Noyes Data Corp., 1989.

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2

Organometallic vapor phase epitaxy: Theoryand practice. Academic Press, 1989.

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Stringfellow, G. B. Organometallic vapor-phase epitaxy: Theory and practice. 2nd ed. Academic Press, 1999.

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Stringfellow, G. B. Organometallic vapor phase epitaxy: Theory and practice. Academic Press, 1989.

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Puchalla, Jochen. Metallorganische Chemische Gasphasenabscheidung (MOCVD) ferroelektrischer Dünnschichten: Herstellung und Charakterisierung. Forschungszentrum Jülich, Zentralbibliothek, 2007.

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International Conference on Metalorganic Vapor Phase Epitaxy (6th 1992 Cambridge, Mass.). Metalorganic vapor phase epitaxy: Sixth international conference, June 8-11, 1992, Hyatt Regency Cambridge, Cambridge, Massachusetts : conference digest. Institute of Electrical and Electronics Engineers, 1992.

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The MOCVD challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications. 2nd ed. CRC Press, 2011.

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Razeghi, M. The MOCVD challenge. Hilger, 1989.

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Chemical vapor deposition of aluminide coatings on iron, nickel, and superalloys. Bhabha Atomic Research Centre, 2009.

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A, Fischer Roland, ed. Precursor chemistry of advanced materials: CVD, ALD and nanoparticles. Springer, 2005.

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Book chapters on the topic "Transistors. Metal organic chemical vapor deposition"

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Adams, R. L. "Metal Organic Chemical Vapor Deposition." In Inorganic Reactions and Methods. John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145227.ch155.

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Duchemin, J. P., S. Hersee, M. Razeghi, and M. A. Poisson. "Metal Organic Chemical Vapor Deposition." In Molecular Beam Epitaxy and Heterostructures. Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5073-3_18.

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Yao, Yao, Robert F. Davis, and Lisa M. Porter. "Metal Organic Chemical Vapor Deposition 2." In Gallium Oxide. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37153-1_9.

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Sallet, Vincent. "Metal-Organic Chemical Vapor Deposition Growth of ZnO Nanowires." In Wide Band Gap Semiconductor Nanowires 1. John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984321.ch11.

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Mathur, Sanjay, Aadesh Pratap Singh, Ralf Müller, Tessa Leuning, Thomas Lehnen, and Hao Shen. "Metal-Organic Chemical Vapor Deposition of Metal Oxide Films and Nanostructures." In Ceramics Science and Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2014. http://dx.doi.org/10.1002/9783527631940.ch43.

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Mathur, Sanjay, Aadesh Pratap Singh, Ralf Müller, Tessa Leuning, Thomas Lehnen, and Hao Shen. "Metal-Organic Chemical Vapor Deposition of Metal Oxide Films and Nanostructures." In Ceramics Science and Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527631957.ch12.

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Shiiki, M., M. Migita, O. Kanehisa, and H. Yamamoto. "Efficient ZnS:Mn Electroluminescent Films Grown by Metal Organic Chemical Vapor Deposition." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_47.

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Lin, Yu-Chuan. "Properties of Atomically Thin WSe2 Grown Via Metal-Organic Chemical Vapor Deposition." In Springer Theses. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00332-6_3.

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Chern, C. S., J. Zhao, Y. Q. Li, et al. "Superconducting Properties of YBa2Cu3O7−x Thin Films by Plasma Enhanced Metal Organic Chemical Vapor Deposition." In Science and Technology of Thin Film Superconductors 2. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_52.

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Kuzmina, N. P., S. I. Troyanov, and M. V. Ryazanov. "Precursors for Barium Metal-Organic Chemical Vapor Deposition. Advantages and Disadvantiges in Improvement of Barium Hexafluoroacetylacetonate." In High-Temperature Superconductors and Novel Inorganic Materials. Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4732-3_51.

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Conference papers on the topic "Transistors. Metal organic chemical vapor deposition"

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COLEMAN, JAMES J. "Metal-organic chemical vapor deposition." In Conference on Lasers and Electro-Optics. OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.tho2.

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Black, Linda R., Ivan O. Clark, Jianming Kui, and William A. Jesser. "Modeling of InP metal organic chemical vapor deposition." In San Diego, '91, San Diego, CA, edited by James D. Trolinger and Ravindra B. Lal. SPIE, 1991. http://dx.doi.org/10.1117/12.49583.

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Soroosh, Mohammad. "Calculation of the Deposition Rate for Metal Organic Chemical Vapor Deposition (MOCVD)." In Communication Technologies: from Theory to Applications (ICTTA). IEEE, 2008. http://dx.doi.org/10.1109/ictta.2008.4530021.

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DU, GUOTONG, XINQIANG WANG, SHUREN YANG, et al. "ZnO THIN FILM GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION." In Proceedings of the International Symposium on Solid State Chemistry in China. WORLD SCIENTIFIC, 2002. http://dx.doi.org/10.1142/9789812776846_0052.

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Shen, Pin-Chun, and Jing Kong. "Chemical vapor deposition of high-quality monolayer transition metal disulfides." In 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S). IEEE, 2017. http://dx.doi.org/10.1109/e3s.2017.8246189.

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Manman, Xi, Lu Kun, Li Zhiwei, and Huang Lirong. "Composition modulation of InGaAsP/InP grown by Metal-Organic Chemical-Vapor Deposition." In Fiber-Based Technologies and Applications. OSA, 2014. http://dx.doi.org/10.1364/fbta.2014.jf2a.39.

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Ma, X. M., X. T. Yang, C. Wang, et al. "ZnO thin film grown on glass by metal-organic chemical vapor deposition." In 2008 2nd IEEE International Nanoelectronics Conference. IEEE, 2008. http://dx.doi.org/10.1109/inec.2008.4585612.

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Lai, Yunfeng. "MgO nanowires synthesized at lower temperatures by metal organic chemical vapor deposition." In 2011 IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2011. http://dx.doi.org/10.1109/nems.2011.6017502.

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Endres, Derek, and Sandip Mazumder. "Computational Study of Pulsed Metal-Organic Chemical Vapor Deposition of Aluminum Nitride." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65525.

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Particles of aluminum nitride (AlN) have been observed to form during epitaxial growth of AlN films by metal organic chemical vapor deposition (MOCVD). Particle formation is undesirable because particles do not contribute to the film growth, and are detrimental to the hydraulic system of the reactor. It is believed that particle formation is triggered by adducts that are formed when the group-III precursor, namely tri-methyl-aluminum (TMAl), and the group-V precursor, namely ammonia (NH3), come in direct contact in the gas-phase. Thus, one way to eliminate particle formation is to prevent the
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Jin, Y. J., X. H. Tang, X. Z. Chen, and D. H. Zhang. "Properties of InSb (N) epilayers grown by metal-organic chemical vapor deposition." In 2010 Photonics Global Conference. IEEE, 2010. http://dx.doi.org/10.1109/pgc.2010.5705961.

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Reports on the topic "Transistors. Metal organic chemical vapor deposition"

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Selvamanickam, V. Research and Development of Coated Conductors Using Metal Organic Chemical Vapor Deposition. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada473046.

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Biefeld, R. M., A. A. Allerman, and S. R. Kurtz. The growth and doping of Al(As)Sb by metal-organic chemical vapor deposition. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/231696.

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Dapkus, P. Low temperature metal-organic chemical vapor deposition growth processes for high-efficiency solar cells. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/6690197.

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Chapman, J. N. Life cycle cost study for coated conductor manufacture by metal organic chemical vapor deposition. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/775041.

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Selvamanickam, V. Research and Development of Second-Generation HTS Conductors Using Metal, Organic Chemical Vapor Deposition. Defense Technical Information Center, 2008. http://dx.doi.org/10.21236/ada480688.

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Biefeld, R. M., A. A. Allerman, S. R. Kurtz, and K. C. Baucom. Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/661741.

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Biefeld, R. M., S. R. Kurtz, and A. A. Allerman. Novel materials and device design by metal-organic chemical vapor deposition for use in infrared emitters. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/414397.

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Bai, G. R., A. Wang, C. M. Foster, J. Vetrone, J. Patel, and X. Wu. Low-temperature growth and orientational control in RuO{sub 2} thin films by metal-organic chemical vapor deposition. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/505373.

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Knisely, Katherine. LDRD 191204: Optimization of Sputtered Aluminum Nitride for the Seeding of Metal Organic Chemical Vapor Deposition Gallium Nitride Films. Office of Scientific and Technical Information (OSTI), 2018. http://dx.doi.org/10.2172/1474019.

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Dapkus, P. D. Low temperature metal-organic chemical vapor deposition growth processes for high-efficiency solar cells. Final technical report, 1 September 1985--30 November 1989. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10131867.

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