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Journal articles on the topic 'Transition Metal Di-chalcogenide'

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1

Yam, Vivian Wing-Wah. "Molecular design of luminescent metal-based materials." Pure and Applied Chemistry 73, no. 3 (2001): 543–48. http://dx.doi.org/10.1351/pac200173030543.

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A series of soluble di- and polynuclear transition-metal acetylides with rich luminescence behavior have been designed and successfully isolated. The photophysical and photochemical properties have been studied. Luminescent polynuclear metal complexes have also been obtained based on the metal chalcogenide building block. These high-nuclearity transition-metal chalcogenide complexes have been structurally characterized and shown to display rich luminescence behavior. Various approaches and strategies to design and synthesize luminescent polynuclear metal complexes that may find potential appli
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2

Bharucha, Shivani R., Mehul S. Dave, Sunil H. Chaki, and Tushar A. Limbani. "Thermal investigation of NbSe2 nanoparticles synthesized through a temperature-dependent sonochemical method." RSC Advances 14, no. 45 (2024): 33459–70. http://dx.doi.org/10.1039/d4ra05108d.

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Due to their unique size-dependent properties, transition metal di-chalcogenide nanoparticles are trending in research for their potential to revolutionize next-generation electronics, energy storage, and catalytic processes.
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3

Yang, Jun-Feng, Braham Parakash, Jens Hardell, and Qian-Feng Fang. "Tribological properties of transition metal di-chalcogenide based lubricant coatings." Frontiers of Materials Science 6, no. 2 (2012): 116–27. http://dx.doi.org/10.1007/s11706-012-0155-7.

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4

Sokolov, Maxim N., Alexander V. Anyushin, Rita Hernandez-Molina, Rosa Llusar, and Manuel G. Basallote. "Hydroxylated phosphines as ligands for chalcogenide clusters: self assembly, transformations and stabilization." Pure and Applied Chemistry 89, no. 3 (2017): 379–92. http://dx.doi.org/10.1515/pac-2017-0105.

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AbstractThis contribution is a documentation of recent advances in the chemistry of chalcogenide polynuclear transition metal complexes coordinated with mono- and di-phosphines functionalized with hydroxo groups. A survey of complexes containing tris(hydroxymethyl)phosphine (THP) is presented. The influence of the alkyl chain in bidentate phosphines, bearing the P–(CH2)x–OH arms, is also analyzed. Finally, isolation and structure elucidation of the complexes with HP(OH)2, P(OH)3, As(OH)3, PhP(OH)2, stabilized by coordination to Ni(0) and Pd(0) centers embedded into chalcogenide clusters, is di
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5

Chaudhary, Karan, Manoj Trivedi, Dhanraj T. Masram, and Nigam P. Rath. "Transition-metal complexes of group 12 with 1,1′-bis(phosphanyl)ferrocene ligands." Acta Crystallographica Section C Structural Chemistry 77, no. 5 (2021): 240–48. http://dx.doi.org/10.1107/s2053229621004162.

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The syntheses of four new cadmium and zinc complexes with 1,1′-bis(phosphanyl)ferrocene ligands and their phosphine chalcogenide derivatives are reported. The complexes were characterized by elemental analyses and IR, 1H NMR, 31P NMR and electronic absorption spectroscopy. The crystal structures of dichlorido[1-diphenylphosphinoyl-1′-(di-tert-butylphosphanyl)ferrocene-κ2 O,P]cadmium(II), [CdCl2{(C17H14OP)(C13H22P)Fe}] or CdCl2(κ2 P,O-dppOdtbpf) (1), bis[μ-(tert-butyl)(1′-diphenylphosphinoylferrocen-1-yl)phosphinato-κ3 O,O′:O′′]bis[chloridozinc(II)], [Zn2{(C9H13O2P)(C17H14OP)Fe}2Cl2] or [ZnOCl{
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6

Joe, Jemee, Hyunwoo Yang, Changdeuck Bae, and Hyunjung Shin. "Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview." Catalysts 9, no. 2 (2019): 149. http://dx.doi.org/10.3390/catal9020149.

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In the photoelectrochemical (PEC) water splitting (WS) reactions, a photon is absorbed by a semiconductor, generating electron-hole pairs which are transferred across the semiconductor/electrolyte interface to reduce or oxidize water into oxygen or hydrogen. Catalytic junctions are commonly combined with semiconductor absorbers, providing electrochemically active sites for charge transfer across the interface and increasing the surface band bending to improve the PEC performance. In this review, we focus on transition metal (di)chalcogenide [TM(D)C] catalysts in conjunction with silicon photoe
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7

Devi, Anjna, Neha Dhiman, Narender Kumar, et al. "Ferromagnetism in Defected TMD (MoX2, X = S, Se) Monolayer and Its Sustainability under O2, O3, and H2O Gas Exposure: DFT Study." Nanomaterials 13, no. 10 (2023): 1642. http://dx.doi.org/10.3390/nano13101642.

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Spin-polarized density-functional theory (DFT) has been employed to study the effects of atmospheric gases on the electronic and magnetic properties of a defective transition-metal dichalcogenide (TMD) monolayer, MoX2 with X = S or Se. This study focuses on three single vacancies: (i) molybdenum “VMo”; (ii) chalcogenide “VX”; and (iii) di-chalcogenide “VX2”. Five different samples of sizes ranging from 4 × 4 to 8 × 8 primitive cells (PCs) were considered in order to assess the effect of vacancy–vacancy interaction. The results showed that all defected samples were paramagnetic semiconductors,
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8

KIRITO, CHO, Naomi Sawamoto, Hideaki Machida, et al. "Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition." Japanese Journal of Applied Physics, April 7, 2023. http://dx.doi.org/10.35848/1347-4065/accb62.

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Abstract WS2 metal-organic (MO) chemical vapor deposition was demonstrated on Si and Al2O3 substrates. Novel MO W precursor of n-BuNC-W(CO)5 and (t-C4H9)2S2. as S precursor were synthesized for the purpose. The obtained films were layered 1T structure as a typical transition metal di-chalcogenide with almost the stoichiometric compositions. The film was significantly stable for 60 days shelf time in the air atmosphere. The layered structure can cover conformally on the 3-simensional fin structure with the layers parallel to the fin surface everywhere.
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9

"(Invited) Advanced CMOS Device Technologies Discussed Also with Transition-Metal Di-Chalcogenide (TMDC) Channel." ECS Meeting Abstracts, 2015. http://dx.doi.org/10.1149/ma2015-02/29/1098.

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10

Kharadi, Mubashir Ahmad, Tarun Agarwal, Ibrahim Mahariq, and Jhuma Saha. "Type-II band-alignment in vertical transition metal-di-chalcogenide heterostructures for near infrared and visible light detection." Physica Scripta, February 18, 2025. https://doi.org/10.1088/1402-4896/adb79b.

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Abstract In this work, group-6 and group-7 (ReSe2) transition metal-di-chalcogenide (TMD) heterostructures are studied systematically using density functional theory (DFT). Different combinations of ReSe2and group-6 TMDs are explored to identify the heterostructures with “type-II band-alignment”. ReSe2 monolayer is chosen as group-7 TMD because of its dynamic stability. Materials like MoS2, MoSe2, MoTe2, WS2 and WSe2 are chosen as group-6 TMDs. The heterostructures are evaluated in terms of metrics like; type of band-alignment, band-offsets, optical absorption and potential difference across t
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11

Khan, Malik Dilshad, Ginena Bildard Shombe, Sandile Humphery Khoza, Gwaza Eric Ayom, and Neerish Revaprasadu. "Chalcogen-Based Precursors for Transition Metal (Co, Ni) Phosphides: (Di)chalcogenide-to-Phosphide Transformation via Chemical Extraction of Chalcogenides." Inorganic Chemistry, July 23, 2024. http://dx.doi.org/10.1021/acs.inorgchem.4c01664.

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12

Sahoo, Krishna Rani, Manoj Talluri, Dipak Maity, et al. "Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin‐Orbit Torque Layer." Advanced Functional Materials, April 14, 2025. https://doi.org/10.1002/adfm.202502408.

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Abstract2D transition metal di‐chalcogenide layers with high electrical conductivity and spin‐orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, vanadium (V) substitutionally doped monolayer MoS2 (VMS) demonstrated as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ≈3 × 10−1 S m−1 of MoS2 to ≈105 S m−1 upon doping to the level of 9
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13

Pal, Samanta, Parushottam Majhi, jyotirmoy sau, et al. "Charge density wave transition and unusual resistance hysteresis in vanadium disulfide (1T-VS2) microflakes." Physica Scripta, August 6, 2024. http://dx.doi.org/10.1088/1402-4896/ad6bfd.

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Abstract We report existence of charge density wave (CDW) transition with unusual resistivity hysteresis in stable micro-flakes of 2D transition metal di-chalcogenide (TMDC) vanadium disulfide (1T-VS2) as ascertained by structural studies, Raman spectroscopy, heat capacity, resistivity measurements and supported by phonon calculations based on density functional theory. The CDW transition occurs at around 296 K on cooling and manifests itself by the onset of resistivity with a negative temperature coefficient, which we identify as the transition temperature (TCDW). The transition is identified
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14

Sett, Anuradha, Soumen Mandal, Dinesh Chandra Dey, and Manik Pradhan. "Investigation of orbital angular momentum sidebands in anisotropic few-layered ReS2." Journal of Optics, July 22, 2025. https://doi.org/10.1088/2040-8986/adf2bb.

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Abstract We first report a detailed investigation of the generation of orbital angular momentum (OAM) sidebands due to the reflection of Laguerre-Gauss light beam from an anisotropic few-layered rhenium di-sulfide (ReS2), a promising transition metal di-chalcogenide (TMDC). This study unveiled a unique characteristics feature of the OAM sidebands that depend not only on the incident angles but also on the polarization states and the properties of interaction mediums. Our theoretical analysis revealed that near the Brewster angle, the sideband intensity gets enhanced as compared to other incide
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15

Dason, Blessing Meshach, N. Kasthuri, and D. Nirmal. "TMD material investigation for a low hysteresis vdW NCFET logic transistor." Semiconductor Science and Technology, February 20, 2024. http://dx.doi.org/10.1088/1361-6641/ad2b09.

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Abstract Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for low-power applications. Research in device physics can address this problem by selection of proper materials satisfying our requirements. Recently, 2D Transition Metal Di-Chalcogenide materials (TMDs) are gaining interest because they help alleviate short-channel effects and DIBL problems. The TMD materials are composed by covalently bonded weak van der Waals (vdW) interaction and can be realized as hetero structures with 2D Ferro-Electric (FE) material CuInP2S6 (CIPS) at the gate stack. This pape
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16

Lu, Li, Sander Reniers, Yunzheng Wang, Yuqing Jiao та Robert Edward Simpson. "Reconfigurable InP waveguide components using the Sb2S3 phase change material". Journal of Optics, 5 липня 2022. http://dx.doi.org/10.1088/2040-8986/ac7e5a.

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Abstract Reconfigurable waveguide components are promising building blocks for photonic neural networks and as an optical analogue to Field-Programmable Gate Arrays. By changing the effective index of the waveguide, reconfigurable waveguide components can achieve on-chip light routing and modulation. In this paper, we design and demonstrate an Sb2S3-reconfigurable InP membrane Mach-Zehnder Interferometer (MZI) on a silicon substrate. Sb2S3, which has tunable refractive index and low absorption in the near-infrared spectrum, was patterned the InP waveguide MZIs to make an optical switch in the
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17

Srivastava, Shikha, and Y. N. Mohapatra. "Defect density of states in natural and synthetic MoS2 multilayer flakes." Journal of Physics D: Applied Physics, May 13, 2022. http://dx.doi.org/10.1088/1361-6463/ac6f98.

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Abstract It has become important to identify and study dominant defects in TMDC (transition metal di-chalcogenide) materials in different forms being explored for use in electronic devices. We have investigated the density and distribution of deep defect states in natural and synthetic multilayer MoS2 (m-MoS2) flakes using temperature-dependent admittance spectroscopy. The flakes sandwiched between suitable electrodes with structure Au|m-MoS2|ZnO act as good quality diodes suitable for capacitance-based studies. The defect density of states shows Gaussian distribution, and density was found to
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18

Sen, Prasenjit. "Computational screening of layered metal chalcogenide materials for HER electrocatalysts, and its synergy with experiments." Journal of Physics: Condensed Matter, February 26, 2024. http://dx.doi.org/10.1088/1361-648x/ad2d45.

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Abstract Layered materials have emerged as attractive candidates in our search for abundant, inex- pensive and efficient hydrogen evolution reaction (HER) catalysts, due to larger specific area these offer. Among these, transition metal dichalcogenides have been studied extensively, while ternary transition metal tri-chalcogenides have emerged as promising candidates re- cently. Computational screening has emerged as a powerful tool to identify the promising materials out of an initial set for specific applications, and has been employed for identifying HER catalysts also. This article present
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